Enhancing Spin-Based Sensor Sensitivity by Avoiding Microwave Field Inhomogeneity of NV Defect Ensemble

The behavior of the magnetic field sensitivity of nitrogen-vacancy (NV) centers as a function of microwave power and the inhomogeneous distribution of MW fields was systematically studied. An optimal structure for exciting spin structures by MW signals was designed using two parallel loop antennas. The volume of the homogeneous regions was approximately 42 mm³, and the associated diameter of the diamond reached up to 5.2 mm with 10¹⁶ NV sensors. Based on this structure, the detection contrast and voltage fluctuation of an optically detected magnetic resonance (ODMR) signal were optimized, and the sensitivity was improved to 5 nT/√Hz. In addition, a pulse sequence was presented to fully eliminate the MW broadening. The magnetic field sensitivity was improved by approximately one order of magnitude as the π-pulse duration was increased to its coherence time. This offers a useful way to improve the sensitivity of spin-based sensors.

Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond

Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. We also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.