Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors

Dielectric/metal/dielectric (DMD) multilayers as a transparent conducting electrode (TCE) have been developed to replace metals due to their high transparency and low sheet resistance. Nickel oxide (NiO) film with a high work function was used as a dielectric to form NiO/Ag/NiO (NAN) TCE, therefore a high barrier height between NAN/zinc oxide (ZnO) interface. In the study, NAN TCE was deposited on ZnO surface to fabricate metal-semiconductor-metal (MSM) photodetectors (PDs) and study its carrier transport mechanism. The NAN TCE has a low sheet resistance of 6.5 Ω/sq. and transmittance more than 40% in a 300-100 nm wavelength range. Such issues result in the figure-of-merit is higher (2.3 × 10-4 Ω-1) than that (2.5 × 10-7 Ω-1) of pure single NiO thin film. As compared to the conventional Au/ZnO MSM-PDs, the NAN/ZnO MSM-PDs demonstrates a lower leakage current as a result of Ni atoms diffusing into ZnO and passivating the defects. Due to the high work function of NiO, the NAN/ZnO interface exhibits a barrier height as high as 0.91 eV. The Au/ZnO MSM-PDs reveals only one carrier conduction of ohmic due to the electrons tunnel form Au into ZnO through the surface defects. In contrast, two distinct carrier transport mechanisms were observed in the NAN/ZnO MSM-PDs. At low-voltage for, ohmic conduction dominates and the electrons inject from NAN to ZnO, trapped by the defect states of ZnO. At high-voltage for, the trapped electrons acquire enough energy and emit from trap to conduction band, entering Poole-Frankel emission transport. .

Enhancing Light Extraction Efficiency in OLED Using Scattering Structure-Embedded DMD-Based Transparent Composite Electrodes

This study investigates the application of scattering structures to the metal layer in a DMD (Dielectric/Metal/Dielectric) configuration through plasma treatment. The purpose is to enhance the light extraction efficiency of organic light-emitting diodes (OLEDs). Different plasma conditions were explored to create scattering structures on the metal layer. The fabricated devices were characterized for their electrical and optical properties. The results demonstrate that the introduction of scattering structures through plasma treatment effectively improves the light extraction efficiency of OLEDs. Specifically, using O2-plasma treatment on the metal layer resulted in significant enhancements in the total transmittance, haze, and figure of merit. These findings suggest that incorporating scattering structures within the DMD configuration can effectively promote light extraction in OLEDs, leading to enhanced overall performance and light efficiency.

Robust Transparent and Conductive Gas Diffusion Multibarrier Based on Mg- and Al-Doped ZnO as Indium Tin Oxide-Free Electrodes for Organic Electronics

Thin-film encapsulation is strictly required to protect transparent, flexible organic light-emitting diodes (OLEDs) based on plastic substrates with poor moisture barrier performances against water vapor and oxygen. However, additional encapsulation process makes OLED fabrication complex and expensive, resulting in lower yield and higher costs for the manufacture of OLEDs. Therefore, to develop simple, transparent conductive gas diffusion barrier (TCGDB) technologies by providing barrier performances to electrodes can be alternatives. Furthermore, TCGDB based on dielectric/metal/dielectric structures exhibit not only excellent barrier performances to protect metallic and organic layers against the ambient environment but also mechanical flexibility overcoming the brittleness of oxides. In this work, to improve the moisture-resistant, electrical, and optical properties of ZnO film, periodical dopant layers were inserted during the deposition of atomic layer deposition ZnO film. These dopant layers make the intrinsic ZnO film more optically and electrically functional. The dopant of MgO with a wide band gap enables blue-shifted optical transmittance, and the dopant of Al atoms makes doped ZnO more electrically conductive. In addition, these dopant layers in the ZnO film interrupt the film crystallization, making the film less crystalline with fewer channels and grain boundaries. This effect results in significant improvement of its GDB properties. With a functional and material design that takes full advantage of the synergetic combination of highly flexible conductive Ag and a moisture-resistant MAZO layer, the MAZO/Ag/MAZO (MAM) multilayer with a thickness of approximately 110 nm achieves a sheet resistance of 5.60 Ω/sq, an average transmittance of 89.72% in the visible range, and a water vapor transmission rate on the order of 10^-5 g/m²/day. In addition, OLEDs with the MAM electrode demonstrated a great potential of indium tin oxide- and encapsulation-free organic electronics.

Multilayer Transparent Top Electrode for Solution Processed Perovskite/Cu(In,Ga)(Se,S)2 Four Terminal Tandem Solar Cells

Halide perovskites (PVSK) have attracted much attention in recent years due to their high potential as a next generation solar cell material. To further improve perovskites progress toward a state-of-the-art technology, it is desirable to create a tandem structure in which perovskite may be stacked with a current prevailing solar cell such as silicon (Si) or Cu(In,Ga)(Se,S)2 (CIGS). The transparent top electrode is one of the key components as well as challenges to realize such tandem structure. Herein, we develop a multilayer transparent top electrode for perovskite photovoltaic devices delivering an 11.5% efficiency in top illumination mode. The transparent electrode is based on a dielectric/metal/dielectric structure, featuring an ultrathin gold seeded silver layer. A four terminal tandem solar cell employing solution processed CIGS and perovskite cells is also demonstrated with over 15% efficiency.