High-Throughput Morphological Chirality Quantification of Twisted and Wrinkled Gold Nanorods

Chirality in gold nanostructures offers an exciting opportunity to tune their differential optical response to left- and right-handed circularly polarized light, as well as their interactions with biomolecules and living matter. However, tuning and understanding such interactions demands quantification of the structural features that are responsible for the chiral behavior. Electron tomography (ET) enables structural characterization at the single-particle level and has been used to quantify the helicity of complex chiral nanorods. However, the technique is time-consuming and consequently lacks statistical value. To address this issue, we introduce herein a high-throughput methodology that combines images acquired by secondary electron-based electron beam-induced current (SEEBIC) with quantitative image analysis. As a result, the geometric chirality of hundreds of nanoparticles can be quantified in less than 1 h. When combining the drastic gain in data collection efficiency of SEEBIC with a limited number of ET data sets, a better understanding of how the chiral structure of individual chiral nanoparticles translates into the ensemble chiroptical response can be reached.

Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices

Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the change in the resistive states have been developed. These models are grounded in the metallic-like filamentary conduction, contact resistance modification and the oxidation of/reduction in the graphene oxide bulk. In this work, using Al/GO/n-Si structures, we demonstrate that all three of these operative mechanisms can simultaneously participate in the resistive switching of graphene oxide. Multiple point-like conduction channels in the graphene oxide films were detected by the electron beam-induced current (EBIC) technique. At the same time, large areas with increased conductivity were also revealed by EBIC. An analysis of these areas by Raman spectroscopy indicates the change in the graphene oxide bulk's resistive properties. The EBIC data along with the measurements of the capacitance-voltage characteristics provided strong evidence of the involvement of an aluminum/graphene oxide interface in the switching processes. In addition, by using Al/GO/n-Si structures, we were able to identify unique local properties of the formed conductive channels, namely the change of the charge state of a conductive channel due to the creation of negatively charged traps and/or an increase in the GO work function.

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Semiconductor p-n junctions are essential building blocks of electronic and optoelectronic devices. Although vertical p-n junction structures can be formed readily by growing in sequence, lateral p-n junctions normal to surface direction can only be formed on specially patterned substrates or by post-growth implantation of one type of dopant while protecting the oppositely doped side. In this study, we report the monolithic formation of lateral p-n junctions in GaAs nanowires (NWs) on a planar substrate sequentially through the Au-assisted vapor-liquid-solid selective lateral epitaxy using metalorganic chemical vapor deposition. p-type and n-type segments are formed by modulating the gas phase flow of p-type (diethylzinc) and n-type (disilane) precursorsin situduring nanowire growth, allowing independent sequential control of p- and n-doping levels self-aligned in-plane in a single growth run. The p-n junctions formed are electrically characterized by fabricating arrays of p-n junction NW diodes with coplanar ohmic metal contacts and two-terminalI-Vmeasurements. The lateral p-n diode exhibits a 2.15 ideality factor and a rectification ratio of ∼10⁶. The electron beam-induced current measurement confirms the junction position. The extracted minority carrier diffusion length is much higher compared to those previously reported, suggesting a low surface recombination velocity in these lateral NWp-n diodes.

Self-consistent charging of PMMA thin film induced by a penetrating electron beam in electron microscopy

The charging of the polymer thin film irradiated by penetrating electron beam (e-beam) is investigated, in parallel with the numerical simulation and experiment. The simulation is performed by combining scattering, drift, diffusion, trapping and recombination. Results show that, due to the electron emission the net charge near the surface is distribution positively, but negatively inside the film because of low electron mobility. The surface potential is positive near surface and accordingly forces some of secondary electrons to return surface. As irradiation proceeds, currents flowing into and out of the film can tend to equilibrium. In the equilibrium state, with increasing beam energy, the surface potential and the efficient emission current decrease, and the electron beam-induced current and the transmission current tend to zero and the beam current valuable, respectively. E-beams of 10-30 keV cause positive charging on PMMA film of 2 µm, which means the high-energy e-beam can effectively discharge a thin film that has been charged negatively by irradiation with low-energy e-beam. With the increase of the film thickness from 1 to 3 µm, the positive surface potential and the emission current decreases and increases, respectively, and the transmission current tends to zero.

Directly Linking Low-Angle Grain Boundary Misorientation to Device Functionality for GaAs Grown on Flexible Metal Substrates

A new growth method to make highly oriented GaAs thin films on flexible metal substrates has been developed, enabling roll-to-roll manufacturing of flexible semiconductor devices. The grains are oriented in the <001> direction with <1° misorientations between them, and they have a comparable mobility to single-crystalline GaAs at high doping concentrations. At the moment, the role of low-angle grain boundaries (LAGBs) on device performance is unknown. A series of electron backscatter diffraction (EBSD) and cathodoluminesence (CL) studies reveal that increased doping concentrations decrease the grain size and increase the LAGB misorientation. Cross-sectional scanning transmission electron microscopy (STEM) reveals the complex dislocation structures within LAGBs. Most importantly, a correlative EBSD/electron beam-induced current (EBIC) experiment reveals that LAGBs are carrier recombination centers and that the magnitude of recombination is dependent on the degree of misorientation. The presented results directly link increased LAGB misorientation to degraded device performance, and therefore, strategies to reduce LAGB misorientations and densities would improve highly oriented semiconductor devices.

Evidence of Enhanced Carrier Collection in Cu(In,Ga)Se2 Grain Boundaries: Correlation with Microstructure

Solar cells containing a polycrystalline Cu(In,Ga)Se₂ absorber outperform the ones containing a monocrystalline absorber, showing a record efficiency of 22.9%. However, the grain boundaries (GBs) are very often considered to be partly responsible for the enhanced recombination activity in the cell and thus cannot explain the registered record efficiency. Therefore, in the present work, we resolve this conundrum by performing correlative electron beam-induced current-electron backscatter diffraction investigations on more than 700 grain boundaries and demonstrating that 58% of the grain boundaries exhibit an enhanced carrier collection compared to the grain interior. Enhanced carrier collection thus indicates that GBs are beneficial for the device performance. Moreover, 27% of the grain boundaries are neutral and 15% are recombination-active. Correlation with microstructure shows that most of the ∑3 GBs are neutral, whereas the random high-angle grain boundaries are either beneficial or detrimental. Enhanced carrier collection observed for a big fraction of high-angle grain boundaries supports the "type-inversion" model and hence the downward band bending at GBs. The decrease in current collection observed at one of the high-angle grain boundaries is explained by Cu being enriched at this GB and hence by the upward shift of the valence band maximum.

Direct Electronic Property Imaging of a Nanocrystal-Based Photovoltaic Device by Electron Beam-Induced Current via Scanning Electron Microscopy

Scanning electron microscopy (SEM) electron beam-induced current (EBIC) studies were performed on the cross-section of a nanocrystal-based hybrid bulk heterojunction photovoltaic device. Using these techniques, the short circuit carrier collection efficiencies are mapped with a better than 100 nm resolution. Electronically deficient and proficient regions within the photoactive layer are determined. The results show that only a fraction of the CdSe nanorod:P3HT layer (P3HT = poly-3(hexylthiophene)) at the Al cathode interface shows primary collection of charged carriers, in which the photoactivity decreases exponentially away from the interface. The recombination losses of the photoactive layer away from this interface prove that the limiting factor of the device is the inability for electrons to percolate between nanoparticles; to alleviate this problem, an interparticle network that conducts the electrons from one nanorod to the next must be established. Furthermore, the EBIC technique applied to the nanocrystalline device used in this study is the first measurement of its kind and can be applied toward other similar architectures.

Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by the probe-electron-beam-induced current technique

We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al(0.48)In(0.52)As/i-Ga(0.30)In(0.70)As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.