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Xu B, Zhu J, Xiao F, Liu N, Liang Y, Jiao C, Li J, Deng Q, Wu S, Wen T, Pei S, Wan H, Xiao X, Xia J, Wang Z. Electrically Tunable MXene Nanomechanical Resonators Vibrating at Very High Frequencies. ACS Nano 2022; 16:20229-20237. [PMID: 36508311 DOI: 10.1021/acsnano.2c05742] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As an emerging class of two-dimensional (2D) layered nanomaterial, MXene exhibits a number of intriguing properties, such as good electrical conductivity and high elastic modulus, and has witnessed continued growth in related device research. However, nanoscale MXene devices which leverage both the intrinsic electrical and mechanical properties of these 2D crystals have not been experimentally studied. Here we demonstrate nanoelectromechanical resonators based on 2D MXene crystals, where Ti3C2Tx drumheads with a wide range of thickness, from more than 50 layers all the way down to a monolayer, exhibit robust nanomechanical vibrations with fundamental-mode frequency f0 up to >70 MHz in the very high frequency (VHF) band, a displacement noise density down to 52 fm/Hz1/2, and a fundamental-mode frequency-quality factor product up to f0 × Q ≈ 6.85 × 109 Hz. By combining experimental results with theoretical calculations, we independently derive the Young's modulus of 2D Ti3C2Tx crystals to be 270-360 GPa, in excellent agreement with nanoindentation measurements, based on which we elucidate frequency scaling pathways toward microwave frequencies. We further demonstrate electrical tuning of resonance frequency in MXene resonators and frequency-shift-based MXene vacuum gauges with responsivity of 736%/Torr and detection range down to 10-4 Torr. Our study can lead to the design and creation of nanoscale vibratory devices that exploit the intrinsic electrical and mechanical properties in 2D MXene crystals.
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Affiliation(s)
- Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Na Liu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
- Department of Petroleum, Oil and Lubricants, Army Logistic Academy of PLA, Chongqing401331, China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Qingyang Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Hujie Wan
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
| | - Xu Xiao
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu611731, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu611731, China
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Zhu J, Xu B, Xiao F, Liang Y, Jiao C, Li J, Deng Q, Wu S, Wen T, Pei S, Xia J, Wang Z. Frequency Scaling, Elastic Transition, and Broad-Range Frequency Tuning in WSe 2 Nanomechanical Resonators. Nano Lett 2022; 22:5107-5113. [PMID: 35522819 DOI: 10.1021/acs.nanolett.2c00494] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Nanomechanical resonators based on atomic layers of tungsten diselenide (WSe2) offer intriguing prospects for enabling novel sensing and signal processing functions. The frequency scaling law of such resonant devices is critical for designing and realizing these high-frequency circuit components. Here, we elucidate the frequency scaling law for WSe2 nanomechanical resonators by studying devices of one-, two-, three-, to more than 100-layer thicknesses and different diameters. We observe resonant responses in both mechanical limits and clear elastic transition in between, revealing intrinsic material properties and devices parameters such as Young's modulus and pretension. We further demonstrate a broad frequency tuning range (up to 230%) with a high tuning efficiency (up to 23% V-1). Such tuning efficiency is among the highest in resonators based on two-dimensional (2D) layered materials. Our findings can offer important guidelines for designing high-frequency WSe2 resonant devices.
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Affiliation(s)
- Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qingyang Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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