Structure-Related Electronic and Magnetic Properties in Ultrathin Epitaxial NixFe3-xO4 Films on MgO(001)

Off-stoichiometric NixFe3-xO4 ultrathin films (x < 2.1) with varying Ni content x and thickness 16 (±2) nm were grown on MgO(001) by reactive molecular beam epitaxy. Synchrotron-based high-resolution X-ray diffraction measurements reveal vertical compressive strain for all films, resulting from a lateral pseudomorphic adaption of the film to the substrate lattice without any strain relaxation. Complete crystallinity with smooth interfaces and surfaces is obtained independent of the Ni content x. For x < 1 an expected successive conversion from Fe3O4 to NiFe2O4 is observed, whereas local transformation into NiO structures is observed for films with Ni content x > 1. However, angle-resolved hard X-ray photoelectron spectroscopy measurements indicate homogeneous cationic distributions without strictly separated phases independent of the Ni content, while X-ray absorption spectroscopy shows that also for x > 1, not all Fe2+ cations are substituted by Ni2+ cations. The ferrimagnetic behavior, as observed by superconducting quantum interference device magnetometry, is characterized by decreasing saturation magnetization due to the formation of antiferromagnetic NiO parts.

BL09XU: an advanced hard X-ray photoelectron spectroscopy beamline of SPring-8

The BL09XU beamline of SPring-8 has been reorganized into a beamline dedicated for hard X-ray photoelectron spectroscopy (HAXPES) to provide advanced capabilities with upgraded optical instruments. The beamline has two HAXPES analyzers to cover a wide range of applications. Two sets of double channel-cut crystal monochromators with the Si(220) and (311) reflections were installed to perform resonant HAXPES analyses with a total energy resolution of less than 300 meV over a wide energy range (4.9-12 keV) while achieving a fixed-exit condition. A double-crystal X-ray phase retarder using diamond crystals controls the polarization state with a high degree of polarization over 0.9 in the wide energy range 5.9-9.5 keV. Each HAXPES analyzer is equipped with a focusing mirror to provide a high-flux microbeam. The design and performance of the upgraded instruments are presented.

Perovskite Solar Cell Using Isonicotinic Acid as a Gap-Filling Self-Assembled Monolayer with High Photovoltaic Performance and Light Stability

High photovoltaic performance and light stability are required for the practical outdoor use of lead-halide perovskite solar cells. To improve the light stability of perovskite solar cells, it is effective to introduce a self-assembled monolayer (SAM) between the carrier transport layer and the perovskite layer. Several alternative approaches in their molecular design and combination with multiple SAMs support high photovoltaic conversion efficiency (PCE). Herein, we report a new structure for improving both PCE and light stability, in which the surface of an electron transport layer (ETL) was modified by combining a fullerene-functionalized self-assembled monolayer (C₆₀SAM) and a suitable gap-filling self-assembled monolayer (GFSAM). Small-sized GFSAMs can enter the gap space of the C₆₀SAM and terminate the unterminated sites on the ETL surface. The best GFSAM in this study was formed using an isonicotinic acid solution. After a light stability test for 68 h at 50 °C under 1 sun illumination, the best cell with C₆₀SAM and GFSAM showed a PCE of 18.68% with a retention rate of over 99%. Moreover, following outdoor exposure for six months, the cells with C₆₀SAM and GFSAM exhibited almost unchanged PCE. From the valence band spectra of the ETLs obtained using hard X-ray photoelectron spectroscopy, we confirmed a decrease in the offset at the ETL/perovskite interface owing to the additional GFSAM treatment on the C₆₀SAM-modified ETL surface. Time-resolved microwave conductivity measurements demonstrated that the additional GFSAM improved electron extraction at the C₆₀SAM-modified ETL/perovskite interface.

Elucidating the Mechanism of Self-Healing in Hydrogel-Lead Halide Perovskite Composites for Use in Photovoltaic Devices

Since the emergence of organometal halide perovskite (OMP) solar cells, there has been growing interest in the benefits of incorporating polymer additives into the perovskite precursor, in terms of both photovoltaic device performance and perovskite stability. In addition, there is interest in the self-healing properties of polymer-incorporated OMPs, but the mechanisms behind these enhanced characteristics are still not fully understood. Here, we study the role of poly(2-hydroxyethyl methacrylate) (pHEMA) in improving the stability of methylammonium lead iodide (MAPI, CH₃NH₃PbI₃) and determine a mechanism for the self-healing of the perovskite-polymer composite following exposure to atmospheres of differing relative humidity, using photoelectron spectroscopy. Varying concentrations of pHEMA (0-10 wt %) are incorporated into a PbI₂ precursor solution during the conventional two-step fabrication method for producing MAPI. It is shown that the introduction of pHEMA results in high-quality MAPI films with increased grain size and reduced PbI₂ concentration compared with pure MAPI films. Devices based on pHEMA-MAPI composites exhibit an improved photoelectric conversion efficiency of 17.8%, compared with 16.5% for a pure MAPI device. pHEMA-incorporated devices are found to retain 95.4% of the best efficiency after ageing for 1500 h in 35% RH, compared with 68.5% achieved from the pure MAPI device. The thermal and moisture tolerance of the resulting films is investigated using X-ray diffraction, in situ X-ray photoelectron spectroscopy (XPS), and hard XPS (HAXPES). It is found that exposing the pHEMA films to cycles of 70 and 20% relative humidity leads to a reversible degradation, via a self-healing process. Angle-resolved HAXPES depth-profiling using a non-destructive Ga Kα source shows that pHEMA is predominantly present at the surface with an effective thickness of ca. 3 nm. It is shown using XPS that this effective thickness reduces with increasing temperature. It is found that N is trapped in this surface layer of pHEMA, suggesting that N-containing moieties, produced during reaction with water at high humidity, are trapped in the pHEMA film and can be reincorporated into the perovskite when the humidity is reduced. XPS results also show that the inclusion of pHEMA enhances the thermal stability of MAPI under both UHV and 9 mbar water vapor pressure.

Effects of Lithium Bis(oxalate)borate Electrolyte Additive on the Formation of a Solid Electrolyte Interphase on Amorphous Carbon Electrodes by Operando Time-Slicing Neutron Reflectometry

Comprehensive analyses were performed using neutron reflectivity and hard X-ray photoelectron spectroscopy to understand the structure and composition of the solid electrolyte interphase (SEI) layer during charge-discharge processes and because of the addition of lithium bis(oxalate)borate (LiBOB) to improve the battery performance. The chemical composition of the SEI was assessed using these methods, and the amount of Li⁺ intercalated in the anode during the electrochemical reaction was evaluated. The results demonstrated that Li₂C₂O₄ was produced initially but later decomposed to Li₂CO₃ on the first charge cycle. Presumably, the SEI layer formed by the decomposition of LiBOB was a single dense layer and chemically stable during the further charge-discharge processes owing to the difference in the reaction process. Therefore, the reduced Li⁺ transfer resistance and charging capacity accounted for the substantial improvement contributed by adding LiBOB. Moreover, the charges used for the intercalation of Li⁺ and SEI formation during the two-cycle processes were analyzed. The addition of LiBOB increased the discharge capacity of the anode and provided an additional charge used for SEI formation, presumably for decomposing Li₂C₂O₄, which could reflect the durability of the Li-ion batteries. The electrode, electrolyte, and charge-discharge reactions affect the SEI properties and consequently the electrochemical reactions. Therefore, additional investigations under different charge-discharge conditions would reveal important characteristics such as the charge and discharge efficiency, output performance, and safety.

Superconcentrated NaFSA-KFSA Aqueous Electrolytes for 2 V-Class Dual-Ion Batteries

Superconcentrated aqueous electrolytes containing NaN(SO2F)2 and KN(SO2F)2 (for which sodium and potassium bis(fluorosulfonyl)amides (FSA), respectively, are abbreviated) have been developed for 2 V-class aqueous batteries. Based on the eutectic composition of the NaFSA-KFSA (56:44 mol/mol) binary system, the superconcentrated solutions of 35 mol kg-1 Na0.55K0.45FSA/H2O and 33 mol kg-1 Na0.45K0.55FSA/H2O are found to form at 25 °C. As both electrolytes demonstrate a wider potential window of ∼3.5 V compared to that of either saturated 20 mol kg-1 NaFSA or 31 mol kg-1 KFSA solution, we applied the 33 mol kg-1 Na0.45K0.55FSA/H2O to two different battery configurations, carbon-coated Na2Ti2(PO4)3∥K2Mn[Fe(CN)6] and carbon-coated Na3V2(PO4)3∥K2Mn[Fe(CN)6]. The former cell shows highly reversible charge/discharge curves with a mean discharge voltage of 1.4 V. Although the latter cell exhibits capacity degradation, it demonstrates 2 V-class operations. Analysis data of the two cells confirmed that Na+ ions were mainly inserted into the negative electrodes passivated by a Na-rich solid electrolyte interphase, and both Na+ and K+ ions were inserted into the positive electrode. Based upon the observation, we propose new sodium-/potassium-ion batteries using the superconcentrated NaFSA-KFSA aqueous electrolytes.

Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits

Ruthenium may replace copper interconnects in next-generation very-large-scale integration (VLSI) circuits. However, interfacial bonding between Ru interconnect wires and surrounding dielectrics must be optimized to reduce thermal boundary resistance (TBR) for thermal management. In this study, various adhesion layers are employed to modify bonding at the Ru/SiO₂ interface. The TBRs of film stacks are measured using the frequency-domain thermoreflectance technique. TiN and TaN with high nitrogen contents significantly reduce the TBR of the Ru/SiO₂ interface compared to common Ti and Ta adhesion layers. The adhesion layer thickness, on the other hand, has only minor effect on TBR when the thickness is within 2-10 nm. Hard X-ray photoelectron spectroscopy of deeply buried layers and interfaces quantitatively reveals that the decrease in TBR is attributed to the enhanced bonding of interfaces adjacent to the TaN adhesion layer, probably due to the electron transfer between the atoms at two sides of the interface. Simulations by a three-dimensional electrothermal finite element method demonstrate that decreasing the TBR leads to a significantly smaller temperature increase in the Ru interconnects. Our findings highlight the importance of TBR in the thermal management of VLSI circuits and pave the way for Ru interconnects to replace the current Cu-based ones.

Role of Alkali Cations in Stabilizing Mixed-Cation Perovskites to Thermal Stress and Moisture Conditions

Perovskite solar cells (PSCs) based on organic-inorganic hybrid perovskites containing a small fraction of substituted alkali-metal cations have shown remarkable performance and stability. However, the role of these cations is unclear. The thermal- and moisture-induced degradation of FA_1-xCs_xPbI₃ and (FA_1-xCs_x)_1-yRb_yPbI₃ (where FA represents formamidinium, x, y = 0.1, 0.05) is investigated using in situ photoelectron spectroscopy (PES). Both compositions exhibit superior moisture stability compared with methylammonium lead iodide under 9 mbar of water vapor. Ga Kα hard X-ray PES is used to investigate the composition of the perovskites at depths up to 45 nm into the surface. This allows more accurate quantification of the alkali-metal distribution than is possible using conventional X-ray PES. The addition of RbI results in a fairly homogeneous distribution of both Cs⁺ and Rb⁺ in the surface layers (in contrast to surface Cs depletion seen in its absence), together with a marked reduction in surface iodide vacancies. Overall, RbI is found to play a critical role in increasing the thermal stability of FA_1-xCs_xPbI₃ by providing a source of I^- that fills iodine vacancy sites in the perovskite lattice, while Rb⁺ is not substantially incorporated into the perovskite. We suggest that the concomitant increase in ion migration barriers in the surface layers is key to improved PSC performance and long-lasting stability.

Chemical Interaction at the MoO3/CH3NH3PbI3-xClx Interface

The limited long-term stability of metal halide perovskite-based solar cells is a bottleneck in their drive toward widespread commercial adaptation. The organic hole-transport materials (HTMs) have been implicated in the degradation, and metal oxide layers are proposed as alternatives. One of the most prominent metal oxide HTM in organic photovoltaics is MoO₃. However, the use of MoO₃ as HTM in metal halide perovskite-based devices causes a severe solar cell deterioration. Thus, the formation of the MoO₃/CH₃NH₃PbI_3-xCl_x (MAPbI_3-xCl_x) heterojunction is systematically studied by synchrotron-based hard X-ray photoelectron spectroscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and Raman spectroscopy. Upon MoO₃ deposition, significant chemical interaction is induced at the MoO₃/MAPbI_3-xCl_x interface: substoichiometric molybdenum oxide is present, and the perovskite decomposes in the proximity of the interface, leading to accumulation of PbI₂ on the MoO₃ cover layer. Furthermore, we find evidence for the formation of new compounds such as PbMoO₄, PbN₂O₂, and PbO as a result of the MAPbI_3-xCl_x decomposition and suggest chemical reaction pathways to describe the underlying mechanism. These findings suggest that the (direct) MoO₃/MAPbI_3-xCl_x interface may be inherently unstable. It provides an explanation for the low power conversion efficiencies of metal halide perovskite solar cells that use MoO₃ as a hole-transport material and in which there is a direct contact between MoO₃ and perovskite.

Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes

High-performance In-Ga-Zn-O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O₂ + H₂ sputtering. IGZO:H SDs on a glass substrate exhibited superior electrical properties with a very high rectification ratio of 3.8 × 10¹⁰, an extremely large Schottky barrier height of 1.17 eV, and a low ideality factor of 1.07. It was confirmed that the hydrogen incorporated during IGZO:H deposition increased the band gap energy from 3.02 eV (IGZO) to 3.29 eV (IGZO:H). Thus, it was considered that the increase in band gap energy (decrease in electron affinity) of IGZO:H contributed to the increase in the Schottky barrier height of the SDs. Angle-resolved hard X-ray photoelectron spectroscopy analysis revealed that oxygen vacancies in IGZO:H were much fewer than those in IGZO, especially in the region near the film surface. Moreover, it was found that the density of near-conduction band minimum states in IGZO:H was lower than that in IGZO. Therefore, IGZO:H played a key role in improving the Schottky interface quality, namely, the increase of Schottky barrier height, decrease of oxygen vacancies, and reduction of near-conduction band minimum states. Finally, we fabricated a flexible IGZO:H SD on a poly(ethylene naphthalate) substrate, and it exhibited record electrical properties with a rectification ratio of 1.7 × 10⁹, Schottky barrier height of 1.12 eV, and ideality factor of 1.10. To the best of our knowledge, both the IGZO:H SDs formed on glass and poly(ethylene naphthalate) substrates achieved the best performance among the IGZO SDs reported to date. The proposed method successfully demonstrated great potential for future flexible electronic applications.

Electronic Structure of a Graphene-like Artificial Crystal of NdNiO3

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes with typical information depths of a few angstroms. Here, we use a combination of bulk-sensitive soft X-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard X-ray photoelectron spectroscopy (HAXPES), and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of NdNiO₃ confined between two 4-unit cell-thick layers of insulating LaAlO₃. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.

Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy

Because of their compatibility with modern Si-based technology, HfO₂-based ferroelectric films have recently attracted attention as strong candidates for applications in memory devices, in particular, ferroelectric field-effect transistors or ferroelectric tunnel junctions. A key property defining the functionality of these devices is the polarization dependent change of the electronic band alignment at the metal/ferroelectric interface. Here, we report on the effect of polarization reversal in functional ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors on the potential distribution across the stack and the electronic band line-up at the interfaces studied in operando by hard X-ray photoemission spectroscopy. By tracking changes in the position of Hf_0.5Zr_0.5O₂ core-level lines with respect to those of the TiN electrode in both short- and open-circuit configurations following in situ polarization reversal, we derive the conduction band offset to be 0.7 (1.0) eV at the top and 1.7 (1.0) eV at the bottom interfaces for polarization, pointing up (down), respectively. Energy dispersive X-ray spectroscopy profiling of the sample cross-section in combination with the laboratory X-ray photoelectron spectroscopy reveal the presence of a TiO_x/TiON layer at  both interfaces. The observed asymmetry in the band line-up changes in the TiN/Hf_0.5Zr_0.5O₂/TiN memory stack is explained by different origin of these oxidized layers and effective pinning of polarization at the top interface. The described methodology and first experimental results are useful for the optimization of HfO₂-based ferroelectric memory devices under development.

Effect of Sr Content and Strain on Sr Surface Segregation of La1-xSrxCo0.2Fe0.8O3-δ as Cathode Material for Solid Oxide Fuel Cells

Strontium-doped lanthanum cobalt ferrite (LSCF) is a widely used cathode material due to its high electronic and ionic conductivity, and reasonable oxygen surface exchange coefficient. However, LSCF can have long-term stability issues such as surface segregation of Sr during solid oxide fuel cell (SOFC) operation, which can adversely affect the electrochemical performance. Thus, understanding the nature of the Sr surface segregation phenomenon and how it is affected by the composition of LSCF and strain are critical. In this research, heteroepitaxial thin films of La_1-x Sr_xCo_0.2Fe_0.8O_3-δ with varying Sr content (x = 0.4, 0.3, 0.2) were deposited by pulsed laser deposition (PLD) on single-crystal NdGaO₃, SrTiO₃, and GdScO₃ substrates, leading to different levels of strain in the films. The extent of Sr segregation at the film surface was quantified using synchrotron-based total-reflection X-ray fluorescence (TXRF) and atomic force microscopy (AFM). The electronic structure of the Sr-rich phases formed on the surface was investigated by hard X-ray photoelectron spectroscopy (HAXPES). The extent of Sr segregation was found to be a function of the Sr content in bulk. Lowering the Sr content from 40% to 30% reduced the surface segregation, but further lowering the Sr content to 20% increased the segregation. The strain of LSCF thin films on various substrates was measured using high-resolution X-ray diffraction (HRXRD), and the Sr surface segregation was found to be reduced with compressive strain and enhanced with tensile strain present within the thin films. A model was developed correlating the Sr surface segregation with Sr content and strain effects to explain the experimental results.

SEI Formation and Interfacial Stability of a Si Electrode in a LiTDI-Salt Based Electrolyte with FEC and VC Additives for Li-Ion Batteries

An electrolyte based on the new salt, lithium 4,5-dicyano-2-(trifluoromethyl)imidazolide (LiTDI), is evaluated in combination with nano-Si composite electrodes for potential use in Li-ion batteries. The additives fluoroethylene carbonate (FEC) and vinylene carbonate (VC) are also added to the electrolyte to enable an efficient SEI formation. By employing hard X-ray photoelectron spectroscopy (HAXPES), the SEI formation and the development of the active material is probed during the first 100 cycles. With this electrolyte formulation, the Si electrode can cycle at 1200 mAh g(-1) for more than 100 cycles at a coulombic efficiency of 99%. With extended cycling, a decrease in Si particle size is observed as well as an increase in silicon oxide amount. As opposed to LiPF6 based electrolytes, this electrolyte or its decomposition products has no side reactions with the active Si material. The present results further acknowledge the positive effects of SEI forming additives. It is suggested that polycarbonates and a high LiF content are favorable components in the SEI over other kinds of carbonates formed by ethylene carbonate (EC) and dimethyl carbonate (DMC) decomposition. This work thus confirms that LiTDI in combination with the investigated additives is a promising salt for Si electrodes in future Li-ion batteries.

Unveiling the Hybrid n-Si/PEDOT:PSS Interface

We investigated the buried interface between monocrystalline n-type silicon (n-Si) and the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (

PEDOT

PSS), which is successfully applied as a hole selective contact in hybrid solar cells. We show that a post-treatment of the polymer films by immersion in a suitable solvent reduces the layer thickness by removal of excess material. We prove that this post-treatment does not affect the functionality of the hybrid solar cells. Through the thin layer we are probing the chemical structure at the n-Si/

PEDOT

PSS interface with synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES). From the HAXPES data we conclude that the Si substrate of a freshly prepared hybrid solar cell is already oxidized immediately after preparation. Moreover, we show that even when storing the sample in inert gas such as, e.g., nitrogen the n-Si/SiOx/

PEDOT

PSS interface continues to further oxidize. Thus, without further surface treatment, an unstable Si suboxide will always be present at the hybrid interface.

Development of a single-shot CCD-based data acquisition system for time-resolved X-ray photoelectron spectroscopy at an X-ray free-electron laser facility

In order to utilize high-brilliance photon sources, such as X-ray free-electron lasers (XFELs), for advanced time-resolved photoelectron spectroscopy (TR-PES), a single-shot CCD-based data acquisition system combined with a high-resolution hemispherical electron energy analyzer has been developed. The system's design enables it to be controlled by an external trigger signal for single-shot pump-probe-type TR-PES. The basic performance of the system is demonstrated with an offline test, followed by online core-level photoelectron and Auger electron spectroscopy in 'single-shot image', 'shot-to-shot image (image-to-image storage or block storage)' and `shot-to-shot sweep' modes at soft X-ray undulator beamline BL17SU of SPring-8. In the offline test the typical repetition rate for image-to-image storage mode has been confirmed to be about 15 Hz using a conventional pulse-generator. The function for correcting the shot-to-shot intensity fluctuations of the exciting photon beam, an important requirement for the TR-PES experiments at FEL sources, has been successfully tested at BL17SU by measuring Au 4f photoelectrons with intentionally controlled photon flux. The system has also been applied to hard X-ray PES (HAXPES) in `ordinary sweep' mode as well as shot-to-shot image mode at the 27 m-long undulator beamline BL19LXU of SPring-8 and also at the SACLA XFEL facility. The XFEL-induced Ti 1s core-level spectrum of La-doped SrTiO3 is reported as a function of incident power density. The Ti 1s core-level spectrum obtained at low power density is consistent with the spectrum obtained using the synchrotron source. At high power densities the Ti 1s core-level spectra show space-charge effects which are analysed using a known mean-field model for ultrafast electron packet propagation. The results successfully confirm the capability of the present data acquisition system for carrying out the core-level HAXPES studies of condensed matter induced by the XFEL.