High-Performance Self-Powered Quantum Dot Infrared Photodetector with Azide Ion Solution Treated Electron Transport Layer

The demand for self-powered photodetectors (PDs) capable of NIR detection without external power is growing with the advancement of NIR technologies such as LIDAR and object recognition. Lead sulfide quantum dot-based photodetectors (PbS QPDs) excel in NIR detection; however, their self-powered operation is hindered by carrier traps induced by surface defects and unfavorable band alignment in the zinc oxide nanoparticle (ZnO NP) electron-transport layer (ETL). In this study, an effective azide-ion (N3 -) treatment is introduced on a ZnO NP ETL to reduce the number of traps and improve the band alignment in a PbS QPD. The ZnO NP ETL treated with azide ions exhibited notable improvements in carrier lifetime and mobility as well as an enhanced internal electric field within the thin-film heterojunction of the ZnO NPs and PbS QDs. The azide-ion-treated PbS QPD demonstrated a increase in short-circuit current density upon NIR illumination, marking a responsivity of 0.45 A W-1, specific detectivity of 4 × 1011 Jones at 950 nm, response time of 8.2 µs, and linear dynamic range of 112 dB.

Interface Engineering to Drive High-Performance MXene/PbS Quantum Dot NIR Photodiode

The realization of a controllable transparent conducting system with selective light transparency is crucial for exploring many of the most intriguing effects in top-illuminated optoelectronic devices. However, the performance is limited by insufficient electrical conductivity, low work function, and vulnerable interface of traditional transparent conducting materials, such as tin-doped indium oxide. Here, it is reported that two-dimensional (2D) titanium carbide (Ti3 C2 Tx ) MXene film acts as an efficient transparent conducting electrode for the lead sulfide (PbS) colloidal quantum dots (CQDs) photodiode with controllable near infrared transmittance. The solution-processed interface engineering of MXene and PbS layers remarkably reduces the interface defects of MXene/PbS CQDs and the carrier concentration in the PbS layer. The stable Ti3 C2 Tx /PbS CQDs photodiodes give rise to a high specific detectivity of 5.51 × 1012  cm W-1  Hz1/2 , a large dynamic response range of 140 dB, and a large bandwidth of 0.76 MHz at 940 nm in the self-powered state, ranking among the most exceptional in terms of comprehensive performance among reported PbS CQDs photodiodes. In contrast with the traditional photodiode technologies, this efficient and stable approach opens a new horizon to construct widely used infrared photodiodes with CQDs and MXenes.

Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water

Tellurium (Te)-doped black silicon (Si) with enhanced absorption and photoelectric performance over a broad wavelength range of 0.2-2.5 μm was obtained using femtosecond (fs) laser irradiation in liquid water. Prior to laser irradiation, the Si sample was covered with a Te thin film (thickness 200 nm) over an adhesion layer of Cr (thickness 5 nm). Surface analyses by scanning electron microscopy and three-dimensional confocal microscopy evidence the presence of hierarchical surface structures combining quasi-periodic stripes with a spatial period of about 5 μm and subwavelength laser-induced periodic surface structures directed in directions parallel and perpendicular to the direction of the laser polarization, respectively. Moreover, the incorporation of Te generates intermediate levels within the Si bandgap. The Te-doped black Si shows a significant enhancement of the absorption, which reaches values of about 48% in the UV and visible (0.2-1.1 μm) and 70% in the near-infrared (1.1-2.5 μm) spectral ranges, respectively, due to the synergistic effects of multiscale surface structures and Te incorporation. Moreover, the surface reflectance is reduced to almost zero across the entire spectrum. The Te-doped black Si sample is used to realize a photodetector which displays an impressive photoelectric capability, being characterized by a responsivity of 328 mA/W, and an external quantum efficiency of 49.27% at a voltage bias of -10 V for 1064 nm light illumination, with rising and falling times of 55 and 67 ms, respectively. These figures remarkably outperform the response of unprocessed Si under the same experimental conditions.

Quantum-Tuned Cascade Multijunction Infrared Photodetector

Emerging applications such as augmented reality, self-driving vehicles, and quantum information technology require optoelectronic devices capable of sensing a low number of photons with high sensitivity (including gain) and high speed and that could operate in the infrared at telecom windows beyond silicon's bandgap. State-of-the-art semiconductors achieve some of these functions through costly and not easily scalable doping and epitaxial growing methods. Colloidal quantum dots (QDs), on the other hand, could be easily tuned and are compatible with consumer electronics manufacturing. However, the development of a QD infrared photodetector with high gain and high response speed remains a challenge. Herein, we present a QD monolithic multijunction cascade photodetector that advances in the speed-sensitivity-gain space through precise control over doping and bandgap. We achieved this by implementing a QD stack in which each layer is tailored via bandgap tuning and electrostatic surface manipulation. The resulting junctions sustain enhanced local electric fields, which, upon illumination, facilitate charge tunneling, recirculation, and gain, but retain low dark currents in the absence of light. Using this platform, we demonstrate an infrared photodetector sensitive up to 1500 nm, with a specific detectivity of ∼3.7 × 1012 Jones, a 3 dB bandwidth of 300 kHz (0.05 cm2 device), and a gain of ∼70× at 1300 nm, leading to an overall gain-bandwidth product over 20 MHz, in comparison with 3 kHz of standard photodiode devices of similar areas.

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.

Self-Powered Infrared Photodetectors with Ultra-High Speed and Detectivity Based on Amorphous Cu-Based MOF Films

Amorphous metal-organic frameworks (aMOFs) start to challenge their crystalline equivalents due to their unique advantages, like lack of grain boundaries, isotropy, flexibility, numerous defects-induced active sites, etc. However, aMOFs are typically synthesized under rigorous conditions, and their properties and applications need to be further explored. In this work, highly transparent p-type amorphous Cu-HHTP films consisting of Cu²⁺ and 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) were synthesized using a simple electrostatic spinning method and identified as p-a-Cu-HHTP. Besides, a p-a-Cu-HHTP/n-Si infrared photodetector (PD) operating on a self-powered basis with ultra-high speed (response time of 40 μs) and detectivity (1.2 × 10¹² Jones) has been developed, with a response time and detectivity that are record values for a MOF-based photodetector. In particular, the p-a-Cu-HHTP/n-Si PD can withstand high temperatures up to 180 °C without property change. Moreover, a flexible metal-semiconductor-metal photodetector based on p-a-Cu-HHTP is constructed, which shows excellent mechanical stability and photoresponse that remain unchanged after bending 120 times, implying its suitability for wearable optoelectronics. The new method to fabricate aMOFs, the unique p-a-Cu-HHTP, and its PDs initiated in this work opens up a new avenue in organic-inorganic hybrid optoelectronics.

Picoampere Dark Current and Electro-Opto-Coupled Sub-to-Super-linear Response from Mott-Transition Enabled Infrared Photodetector for Near-Sensor Vision Processing

Light-intensity selective superlinear photodetectors with ultralow dark current can provide an essential breakthrough for the development of high-performing near-sensor vision processing. However, the development of near-sensor vision processing is not only conceptually important for device operation (given that sensors naturally exhibit linear/sublinear responses), but also essential to get rid of the massive amount of data generated during object sensing and classification with noisy inputs. Therefore, achieving the giant superlinear photoresponse while maintaining the picoampere leakage current, irrespective of the measurement bias, is one of the most challenging tasks. Here, Mott material (vanadium dioxide) and silicon-based integrated infrared photodetectors are developed that show giant superlinear photoresponse (exponent >18) and ultralow dark current of 4.46 pA. Specifically, the device demonstrates an electro-opto-coupled insulator-to-metal transition, which leads to outstanding photocurrent on/off ratio (>10⁶ ), a high responsivity (>1 mA W^-1 ), and excellent detectivity (>10¹²  Jones), while maintaining response speed (τ_r  = 6 µs and τ_f  = 10 µs). Further, intensity-selective near-sensor processing is demonstrated and night vision pattern reorganization even with noisy inputs is exhibited. This research will pave the way for the creation of high-performance photodetectors with potential uses, such as in night vision, pattern recognition, and neuromorphic processing.

Multifunctional GeAs/WS2 Heterojunctions for Highly Polarization-Sensitive Photodetectors in the Short-Wave Infrared Range

Polarization-sensitive photodetectors in the infrared range have attracted considerable attention because of their unique and wide application prospects in polarization sensors and remote sensing. However, it is challenging to achieve short-wave infrared polarization detection as most polarization-sensitive photodetectors are based on transition-metal dichalcogenide (TMD) materials with in-plane symmetric crystal structure and sizable band gap (1-2 eV). In this work, we design a type-II GeAs/WS₂ heterojunction realizing superior self-driven polarization-sensitive photodetection in the short-wave infrared region. The device shows obvious rectifying behavior with a rectification ratio of 1.5 × 10⁴ in the dark and excellent photoresponse characteristics in a broad spectral range. Accordingly, the high responsivity of 509 mA/W, large on/off ratio of 10³, a high EQE of 99.8%, and a high specific detectivity of 1.08 × 10¹² Jones are obtained under 635 nm laser irradiation. Taking advantage of the narrow band gap of GeAs with an anisotropic structure, the detection spectral coverage can be extended from the visible to the short-wave infrared range (635-1550 nm). Further, the GeAs/WS₂ heterojunction shows high polarization sensitivity with an anisotropic photocurrent ratio of 4.5 and 3.1 at zero bias under 1310 and 1550 nm laser irradiation, respectively, which is much higher than that of reported polarization-sensitive photodetectors in the infrared region. This work provides an effective route using low-symmetry 2D materials with narrow band gap and anisotropic structure to design van der Waals (vdW) heterojunctions, realizing multifunctional optoelectronics for rectifying, photovoltaics, and polarization-sensitive photodetectors with spectral coverage up to 1550 nm.

Large Photomultiplication by Charge-Self-Trapping for High-Response Quantum Dot Infrared Photodetectors

PbS colloidal quantum dots (CQDs) are emerging as promising candidates for next-generation, low-cost, and high-performance infrared photodetectors. Recently, photomultiplication has been explored to improve the detectivity of CQD infrared photodetectors by doping charge-trapping material into a matrix. However, this relies on remote doping that could influence carrier transfer giving rise to limited photomultiplication. Herein, a charge-self-trapped ZnO layer is prepared by a surface reaction between acid and ZnO. Photogenerated electrons trapped by oxygen vacancy defects at the ZnO surface generate a strong interfacial electrical field and induce large photomultiplication at extremely low bias. A PbS CQD infrared photodiode based on this structure shows a response (R) of 77.0 A·W^-1 and specific detectivity of 1.5 × 10¹¹ Jones at 1550 nm under a -0.3 V bias. This self-trapped ZnO layer can be applied to other photodetectors such as perovskite-based devices.

Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering

The photogating effect in hybrid structures has manifested itself as a reliable and promising approach for photodetectors with ultrahigh responsivity. A crucial factor of the photogating effect is the built-in potential at the interface, which controls the separation and harvesting of photogenerated carriers. So far, the primary efforts of designing the built-in potential rely on discovering different materials and developing multilayer structures, which may raise problems in the compatibility with the standard semiconductor production line. Here, we report an enhanced photogating effect in a monolayer graphene photodetector based on a structured substrate, where the built-in potential is established by the mechanism of potential fluctuation engineering. We find that the enhancement factor of device responsivity is related to a newly defined parameter, namely, fluctuation period rate (P_f). Compared to the device without a nanostructured substrate, the responsivity of the device with an optimized P_f is enhanced by 100 times, reaching a responsivity of 240 A/W and a specific detectivity, D*, of 3.4 × 10¹² Jones at 1550 nm wavelength and room temperature. Our experimental results are supported by both theoretical analysis and numerical simulation. Since our demonstration of the graphene photodetectors leverages the engineering of structures with monolayer graphene rather than materials with a multilayer complex structure. it should be universal and applicable to other hybrid photodetectors.

Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

Benefiting from the inherent capacity for detecting longer wavelengths inaccessible to human eyes, infrared photodetectors have found numerous applications in both military and daily life, such as individual combat weapons, automatic driving sensors and night-vision devices. However, the imperfect material growth and incomplete device manufacturing impose an inevitable restriction on the further improvement of infrared photodetectors. The advent of artificial microstructures, especially metasurfaces, featuring with strong light field enhancement and multifunctional properties in manipulating the light-matter interactions on subwavelength scale, have promised great potential in overcoming the bottlenecks faced by conventional infrared detectors. Additionally, metasurfaces exhibit versatile and flexible integration with existing detection semiconductors. In this paper, we start with a review of conventionally bulky and recently emerging two-dimensional material-based infrared photodetectors, i.e., InGaAs, HgCdTe, graphene, transition metal dichalcogenides and black phosphorus devices. As to the challenges the detectors are facing, we further discuss the recent progress on the metasurfaces integrated on the photodetectors and demonstrate their role in improving device performance. All information provided in this paper aims to open a new way to boost high-performance infrared photodetectors.

Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures

Two-dimensional transition-metal dichalcogenide (2D-TMD) semiconductors and their van der Waals heterostructures (vdWHs) have attracted great attention because of their tailorable band-engineering properties and provide a propitious platform for next-generation extraordinary performance energy-harvesting devices. Herein, we reported unique and unreported germanium selenide/rhenium diselenide (p-GeSe/n-ReSe₂) 2D-TMD vdWH photodetectors for extremely sensitive and high-performance photodetection in the broadband spectral range (visible and near-infrared range). A high and gate-tunable rectification ratio (RR) of 7.34 × 10⁵ is achieved, stemming from the low Schottky barrier contacts and sharp interfaces of the p-GeSe/n-ReSe₂ 2D-TMD vdWHs. In addition, a noticeably high responsivity (R = 2.89 × 10⁵ A/W) and specific detectivity (D* = 4.91 × 10¹³ Jones), with good external quantum efficiency (EQE = 6.1 × 10⁵) are obtained because of intralayer and interlayer transition of excitations, enabling the broadband photoresponse (λ = 532-1550 nm) at room temperature. Furthermore, fast response times of 16-20 μs are estimated under the irradiated laser of λ = 1550 nm because of interlayer exciton transition. Such a TMD-based compact system offers an opportunity for the realization of high-performance broadband infrared photodetectors.

Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials

The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe₄), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe₄ has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 days storage in humid air. We demonstrate simple proof-of-concept broad spectrum photodetectors with responsivities above 0.1 AW^-1 across both the visible and short-wave infrared wavelengths. This corresponds to a specific detectivity of ∼10⁹ cm Hz^1/2 W^-1 at λ = 1.4 μm at room temperature. These devices show a linear photoresponse vs illumination intensity relationship over ∼4 orders of magnitude, and fast rise/fall times of ∼50 ns, also verified by a 3 dB roll-off frequency of 5.9 MHz. As the first demonstration of photodetection using ZrGeTe₄, these characteristics measured on a simple proof-of-concept device show the exciting potential of the ZrGeTe₄ for room temperature IR optoelectronic applications.

Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

Room-temperature infrared photodetectors are in great demand because of their vitally important applications in the military and civilian fields, which has inspired intensive studies in recent decades. Here, we present the fabrication of a large-size PdSe₂/CdTe mixed-dimensional van der Waals (vdW) heterojunction for room-temperature infrared detection. Taking advantage of the wide light absorption of the multilayer PdSe₂, high-quality vdW interface, and unique mixed-dimensional device geometry, the present device is capable of detecting an ultrawide light up to long-wave infrared (LWIR) of 10.6 μm at room temperature. In addition, our photodetector exhibits a good capability to follow short pulse infrared signals with a quick response rate of 70 ns, a large responsivity of 324.7 mA/W, and a reasonable specific detectivity of 3.3 × 10¹² Jones. Significantly, the assembled photodetector is highly sensitive to a polarized infrared light signal with a decent polarization sensitivity of 4.4. More importantly, an outstanding LWIR imaging capability based on the PdSe₂/CdTe vdW heterojunction at nonrefrigeration condition is demonstrated. Our work paves a novel route for the design of highly polarization-sensitive, room-temperature infrared photodetectors.

Mixed-dimensional Te/CdS van der Waals heterojunction for self-powered broadband photodetector

The 2D layered crystals can physically integrate with other non-2D components through van der Waals (vdW) interaction, forming mixed-dimensional heterostructures. As a new elemental 2D material, tellurium (Te) has attracted intense recent interest for high room-temperature mobility, excellent air-stability, and the easiness of scalable synthesis. To date, the Te is still in its research infancy, and optoelectronics with low-power consumption are less reported. Motivated by this, we report the fabrication of a mixed-dimensional vdW photodiode using 2D Te and 1D CdS nanobelt in this study. The heterojunction exhibits excellent self-powered photosensing performance and a broad response spectrum up to short-wave infrared. Under 520 nm wavelength, a high responsivity of 98 mA W^-1is obtained at zero bias with an external quantum efficiency of 23%. Accordingly, the photo-to-dark current ratio and specific detectivity reach 9.2 × 10³and 1.9 × 10¹¹Jones due to the suppressed dark current. This study demonstrates the promising applications of Te/CdS vdW heterostructure in high-performance photodetectors. Besides, such a mixed-dimensional integration strategy paves a new way for device design, thus expanding the research scope for 2D Te-based optoelectronics.

Flexible infrared photodetector based on indium antimonide nanowire arrays

Narrow bandgap semiconductors like indium antimonide (InSb) are very suitable for high-performance room temperature infrared photodetectors, but the fragile nature of the wafer materials hinders their application as flexible/wearable devices. Here, we present a method to fabricate a photodetector device of assembled crystalline InSb nanowire (NW) arrays on a flexible substrate that balances high performance and flexibility, facilitating its application in wearable devices. The InSb NWs were synthesized by means of a vapor-liquid-solid technique, with gold nanoclusters as seeding particles. The morphological and crystal properties were investigated using scanning electron microscopy, x-ray diffraction and high-resolution transmission electron microscopy, which revealed the unique spike shape and high crystallinity with (111) and (220) planes of InSb NWs. The flexible infrared photodetector devices were fabricated by transferring the NWs onto transparent and stretchable polydimethylsiloxane substrate with pre-deposited gold electrodes. Current versus time measurement of the photodetector devices under light showed photoresponsivity and sensitivity to mid-infrared at bias as low as 0.1 V while attached to curved surfaces (suitable for skin implants). A high-performance NW device yielded efficient rise and decay times down to 1 s and short time lag for infrared detection. Based on dark current, calculated specific detectivity of the flexible photodetector was 1.4 × 10¹²Jones. The performance and durability render such devices promising for use as wearable infrared photodetectors.

High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires

A graphene photodetector decorated with Bi₂Te₃ nanowires (NWs) with a high gain of up to 3 × 10⁴ and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi₂Te₃ nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi₂Te₃ NWs junction. Eventually, with low bandgap Bi₂Te₃ NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).

Modulation of Junction Modes in SnSe2/MoTe2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices

We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe₂ and MoTe₂ with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 10¹² Jones. In addition, to harness the electrostatic gate bias, V_oc can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe₂/MoTe₂ heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

Mid- and Long-Wave Infrared Optoelectronics via Intraband Transitions in PbS Colloidal Quantum Dots

Optical sensing in the mid- and long-wave infrared (MWIR, LWIR) is of paramount importance for a large spectrum of applications including environmental monitoring, gas sensing, hazard detection, food and product manufacturing inspection, and so forth. Yet, such applications to date are served by costly and complex epitaxially grown HgCdTe quantum-well and quantum-dot infrared photodetectors. The possibility of exploiting low-energy intraband transitions make colloidal quantum dots (CQD) an attractive low-cost alternative to expensive low bandgap materials for infrared applications. Unfortunately, fabrication of quantum dots exhibiting intraband absorption is technologically constrained by the requirement of controlled heavy doping, which has limited, so far, MWIR and LWIR CQD detectors to mercury-based materials. Here, we demonstrate intraband absorption and photodetection in heavily doped PbS colloidal quantum dots in the 5-9 μm range, beyond the PbS bulk band gap, with responsivities on the order of 10-4 A/W at 80 K. We have further developed a model based on quantum transport equations to understand the impact of electron population of the conduction band in the performance of intraband photodetectors and offer guidelines toward further performance improvement.

Nonlocal Response in Infrared Detector with Semiconducting Carbon Nanotubes and Graphdiyne

Semiconducting single-walled carbon nanotubes (s-SWNTs) are regarded as an important candidate for infrared (IR) optical detection due to their excellent intrinsic properties. However, the strong binding energy of excitons in s-SWNTs seriously impedes the development of s-SWNTs IR photodetector. This Communication reports an IR photodetector with highly pure s-SWNTs and γ-graphdiyne. The heterojunctions between the two materials can efficiently separate the photogenerated excitons. In comparison to device fabricated only with s-SWNTs, this IR detector shows a uniform response in the whole channel of the device. The response time is demonstrated to be below 1 ms. The optimal responsivity and detectivity approximately reach 0.4 mA W^-1 and 5 × 10⁶ cmHz^1/2 W^-1, respectively.

Self-rolling and light-trapping in flexible quantum well-embedded nanomembranes for wide-angle infrared photodetectors

Three-dimensional (3D) design and manufacturing enable flexible nanomembranes to deliver unique properties and applications in flexible electronics, photovoltaics, and photonics. We demonstrate that a quantum well (QW)-embedded nanomembrane in a rolled-up geometry facilitates a 3D QW infrared photodetector (QWIP) device with enhanced responsivity and detectivity. Circular geometry of nanomembrane rolls provides the light coupling route; thus, there are no external light coupling structures, which are normally necessary for QWIPs. This 3D QWIP device under tube-based light-trapping mode presents broadband enhancement of coupling efficiency and omnidirectional detection under a wide incident angle (±70°), offering a unique solution to high-performance focal plane array. The winding number of these rolled-up QWIPs provides well-tunable blackbody photocurrents and responsivity. 3D self-assembly of functional nanomembranes offers a new path for high conversion efficiency between light and electricity in photodetectors, solar cells, and light-emitting diodes.

High-performance Ge quantum dot decorated graphene/zinc-oxide heterostructure infrared photodetector

A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W)13,14 of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, -3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼10(3)) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.

Colloidal quantum dots intraband photodetectors

Photoconductivity is demonstrated with monodispersed HgSe colloidal quantum dots that are illuminated with radiation resonant with 1S(e)-1P(e) intraband electronic absorption, between 3 and 5 μm. A doping of two electrons per dot gives the lowest dark current, and a detectivity of 8.5 × 10(8) Jones is obtained at 80 K. Photoluminescence of the intraband transition is also observed. The detector properties are discussed in terms of the measured photoluminescence quantum yield, the electron mobility in the 1P(e) state, and the responsivity. The intraband photoresponse allows to fully harness the quantum confined states in colloidal nanostructures, extending the prior limited use of interband transition.

Effective harvesting, detection, and conversion of IR radiation due to quantum dots with built-in charge

We analyze the effect of doping on photoelectron kinetics in quantum dot [QD] structures and find two strong effects of the built-in-dot charge. First, the built-in-dot charge enhances the infrared [IR] transitions in QD structures. This effect significantly increases electron coupling to IR radiation and improves harvesting of the IR power in QD solar cells. Second, the built-in charge creates potential barriers around dots, and these barriers strongly suppress capture processes for photocarriers of the same sign as the built-in-dot charge. The second effect exponentially increases the photoelectron lifetime in unipolar devices, such as IR photodetectors. In bipolar devices, such as solar cells, the solar radiation creates the built-in-dot charge that equates the electron and hole capture rates. By providing additional charge to QDs, the appropriate doping can significantly suppress the capture and recombination processes via QDs. These improvements of IR absorption and photocarrier kinetics radically increase the responsivity of IR photodetectors and photovoltaic efficiency of QD solar cells.