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Jin S, Yuan H, Pang T, Zhang M, Li J, Zheng Y, Wu T, Zhang R, Wang Z, Chen D. Highly Bright and Stable Lead-Free Double Perovskite White Light-Emitting Diodes. Adv Mater 2024; 36:e2308487. [PMID: 37918976 DOI: 10.1002/adma.202308487] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Revised: 10/15/2023] [Indexed: 11/04/2023]
Abstract
Lead-free double perovskites (DPs) are emerging highly stable emitters with efficient broadband self-trapped exciton (STE) photoluminescence (PL), but their low electroluminescent (EL) efficiency is a critical shortcoming. This work promotes the external quantum efficiency (EQE) and luminance of DP-based white light-emitting diode (wLED) with a normal device structure to 0.76% and 2793 cd m-2 via two modifications: This work prevents the formation of adverse metallic silver, spatially confined STE, and lowers local site symmetry in Cs2 Na0.4 Ag0.6 In0.97 Bi0.03 Cl6 DP by terbium doping; and this work develops a guest-host strategy to improve film morphology, reduce defect density, and increase carrier mobility. These alterations cause substantial increase in STE radiative recombination and charge injection efficiency of perovskite layer. Finally, pure white EL with ideal color coordinates of (0.328, 0.329) and a record-breaking optoelectronic performance is achieved by introducing additional green carbon dots in LED to fill the deficient green component.
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Affiliation(s)
- Shilin Jin
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - He Yuan
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Tao Pang
- Huzhou Key Laboratory of Materials for Energy Conversion and Storage, College of Science, Huzhou University, Huzhou, Zhejiang, 313000, China
| | - Manjia Zhang
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Junyang Li
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Yuanhui Zheng
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, Fujian, 350116, P. R. China
- College of Chemistry, Fuzhou University, Fuzhou, Fujian, 350116, P. R. China
| | - Tianmin Wu
- Key Laboratory of Opto-Electronic Science and Technology for Medicine of Ministry of Education, College of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou, Fujian, 350117, China
| | - Ruidan Zhang
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Zhibin Wang
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
| | - Daqin Chen
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, Fujian, 350116, P. R. China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
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2
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Liu X, Fan Z, Zheng Y, Zha J, Zhang Y, Zhu S, Zhang Z, Zhang X, Huang F, Liang T, Li C, Wang Q, Tan C. Controlled Synthesis of Lead-Free Double Perovskite Colloidal Nanocrystals for Nonvolatile Resistive Memory Devices. ACS Appl Mater Interfaces 2023; 15:55991-56002. [PMID: 37987746 DOI: 10.1021/acsami.3c12576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Although lead-free double perovskites such as Cs2AgBiBr6 have been widely explored, they still remain a daunting challenge for the controlled synthesis of lead-free double perovskite nanocrystals with highly tunable morphology and band structure. Here, we report the controlled synthesis of lead-free double perovskite colloidal nanocrystals including Cs2AgBiBr6 and Cs2AgInxBi1-xBr6 via a facile wet-chemical synthesis method for the fabrication of high-performance nonvolatile resistive memory devices. Cs2AgBiBr6 colloidal nanocrystals with well-defined cuboidal, hexagonal, and triangular morphologies are synthesized through a facile wet-chemical approach by tuning the reaction temperature from 150 to 190 °C. Further incorporating indium into Cs2AgBiBr6 to synthesize alloyed Cs2AgInxBi1-xBr6 nanocrystals not only can induce the indirect-to-direct bandgap transition with enhanced photoluminescence but also can improve its structural stability. After optimizing the active layers and device structure, the fabricated Ag/polymethylene acrylate@Cs2AgIn0.25Bi0.75Br6/ITO resistive memory device exhibits a low power consumption (the operating voltage is ∼0.17 V), excellent cycling stability (>10 000 cycles), and good synaptic property. Our study would enable the facile wet-chemical synthesis of lead-free double perovskite colloidal nanocrystals in a highly controllable manner for the development of high-performance resistive memory devices.
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Affiliation(s)
- Xingyu Liu
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Zhen Fan
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Yuhui Zheng
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P. R. China
| | - Yong Zhang
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
| | - Siyuan Zhu
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
| | - Zhang Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Xuyan Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Fei Huang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Tong Liang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Chunxia Li
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Qianming Wang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR 999077, P. R. China
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3
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Lao J, Yan M, Tian B, Jiang C, Luo C, Xie Z, Zhu Q, Bao Z, Zhong N, Tang X, Sun L, Wu G, Wang J, Peng H, Chu J, Duan C. Ultralow-Power Machine Vision with Self-Powered Sensor Reservoir. Adv Sci (Weinh) 2022; 9:e2106092. [PMID: 35285175 PMCID: PMC9130913 DOI: 10.1002/advs.202106092] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2021] [Revised: 02/14/2022] [Indexed: 05/11/2023]
Abstract
A neuromorphic visual system integrating optoelectronic synapses to perform the in-sensor computing is triggering a revolution due to the reduction of latency and energy consumption. Here it is demonstrated that the dwell time of photon-generated carriers in the space-charge region can be effectively extended by embedding a potential well on the shoulder of Schottky energy barrier. It permits the nonlinear interaction of photocurrents stimulated by spatiotemporal optical signals, which is necessary for in-sensor reservoir computing (RC). The machine vision with the sensor reservoir constituted by designed self-powered Au/P(VDF-TrFE)/Cs2 AgBiBr6 /ITO devices is competent for both static and dynamic vision tasks. It shows an accuracy of 99.97% for face classification and 100% for dynamic vehicle flow recognition. The in-sensor RC system takes advantage of near-zero energy consumption in the reservoir, resulting in decades-time lower training costs than a conventional neural network. This work paves the way for ultralow-power machine vision using photonic devices.
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Affiliation(s)
- Jie Lao
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Mengge Yan
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
- Zhejiang LabHangzhou310000China
| | - Chunli Jiang
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Chunhua Luo
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Zhuozhuang Xie
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Qiuxiang Zhu
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
- Zhejiang LabHangzhou310000China
| | - Zhiqiang Bao
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
| | - Linfeng Sun
- Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE)School of Physics Beijing Institute of TechnologyBeijing100081China
| | - Guangjian Wu
- Institute of OptoelectronicsFrontier Institute of Chip and SystemFudan University220 Handan RoadShanghai200433China
| | - Jianlu Wang
- Institute of OptoelectronicsFrontier Institute of Chip and SystemFudan University220 Handan RoadShanghai200433China
| | - Hui Peng
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
- Collaborative Innovation Center of Extreme OpticsShanxi UniversityShanxi030006China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
- Institute of OptoelectronicsFudan University220 Handan RoadShanghai200433China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE)Ministry of EducationDepartment of ElectronicsEast China Normal UniversityShanghai200241China
- Collaborative Innovation Center of Extreme OpticsShanxi UniversityShanxi030006China
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4
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Cai X, Zhang Y, Shi Z, Chen Y, Xia Y, Yu A, Xu Y, Xie F, Shao H, Zhu H, Fu D, Zhan Y, Zhang H. Discovery of Lead-Free Perovskites for High-Performance Solar Cells via Machine Learning: Ultrabroadband Absorption, Low Radiative Combination, and Enhanced Thermal Conductivities. Adv Sci (Weinh) 2022; 9:e2103648. [PMID: 34904393 PMCID: PMC8811845 DOI: 10.1002/advs.202103648] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/11/2021] [Revised: 10/27/2021] [Indexed: 06/14/2023]
Abstract
Exploring lead-free candidates and improving efficiency and stability remain the obstacle of hybrid organic-inorganic perovskite-based devices commercialization. Traditional trial-and-error methods seriously restrict the discovery especially for large search space, complex crystal structure and multi-objective properties. Here, the authors propose a multi-step and multi-stage screening scheme to accelerate the discovery of hybrid organic-inorganic perovskites A2 BB'X6 from a large number of candidates through combining machine learning with high-throughput calculations for pursuing excellent efficiency and thermal stability in solar cells. Followed by a series of screenings, the structure-property relationships mapping A2 BB'X6 properties are built and the predictions are close to reported experimental results. Successfully, four experimental-feasibly candidates with good stability, high Debye temperature and suitable band gap are screened out and further verified by density-functional theory calculations, in which the predicted efficiency for three lead-free candidates ((CH3 NH3 )2 AgGaBr6 , (CH3 NH3 )2 AgInBr6 and (C2 NH6 )2 AgInBr6 ) achieves 20.6%, 19.9% and 27.6% due to ultrabroadband absorption region ranging from UVC to IRC with excitonic radiative combination rates as low as 10 ps, large or intermediate polarons form with properties similar to CH3 NH3 PbI3 and the calculated thermal conductivities are 5.04, 4.39 and 5.16 Wm-1 K-1 , respectively, with Debye temperatures larger than 500 K, beneficial for suppression of both nonradiative combination and heat-induced degradation.
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Affiliation(s)
- Xia Cai
- School of Information Science and TechnologyFudan UniversityShanghai200433China
- Center of Micro‐Nano SystemSchool of Information Science and TechnologyFudan UniversityShanghai200433China
| | - Yiming Zhang
- School of Information Science and TechnologyFudan UniversityShanghai200433China
- Key Laboratory of Micro and Nano Photonic Structures (MOE) and Department of Optical Science and EngineeringFudan UniversityShanghai200433China
| | - Zejiao Shi
- School of Information Science and TechnologyFudan UniversityShanghai200433China
- Center of Micro‐Nano SystemSchool of Information Science and TechnologyFudan UniversityShanghai200433China
| | - Ying Chen
- School of Information Science and TechnologyFudan UniversityShanghai200433China
| | - Yujie Xia
- School of Information Science and TechnologyFudan UniversityShanghai200433China
- Key Laboratory of Micro and Nano Photonic Structures (MOE) and Department of Optical Science and EngineeringFudan UniversityShanghai200433China
| | - Anran Yu
- School of Information Science and TechnologyFudan UniversityShanghai200433China
- Center of Micro‐Nano SystemSchool of Information Science and TechnologyFudan UniversityShanghai200433China
| | - Yuanfeng Xu
- School of ScienceShandong Jianzhu UniversityJinanShandong250101China
| | - Fengxian Xie
- School of Information Science and TechnologyFudan UniversityShanghai200433China
| | - Hezhu Shao
- College of Electrical and Electronic EngineeringWenzhou UniversityWenzhou325035China
| | - Heyuan Zhu
- School of Information Science and TechnologyFudan UniversityShanghai200433China
- Key Laboratory of Micro and Nano Photonic Structures (MOE) and Department of Optical Science and EngineeringFudan UniversityShanghai200433China
| | - Desheng Fu
- Department of Electronics & Materials SciencesFaculty of Engineering, & Department of Optoelectronics and Nanostructure ScienceGraduate School of Science and TechnologyShizuoka UniversityHamamatsu432‐8561Japan
| | - Yiqiang Zhan
- School of Information Science and TechnologyFudan UniversityShanghai200433China
- Center of Micro‐Nano SystemSchool of Information Science and TechnologyFudan UniversityShanghai200433China
| | - Hao Zhang
- School of Information Science and TechnologyFudan UniversityShanghai200433China
- Key Laboratory of Micro and Nano Photonic Structures (MOE) and Department of Optical Science and EngineeringFudan UniversityShanghai200433China
- Yiwu Research Institute of Fudan UniversityChengbei RoadYiwu CityZhejiang322000China
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5
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Wu H, Erbing A, Johansson MB, Wang J, Kamal C, Odelius M, Johansson EMJ. Mixed-Halide Double Perovskite Cs 2 AgBiX 6 (X=Br, I) with Tunable Optical Properties via Anion Exchange. ChemSusChem 2021; 14:4507-4515. [PMID: 34369665 PMCID: PMC8596517 DOI: 10.1002/cssc.202101146] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2021] [Revised: 08/03/2021] [Indexed: 06/13/2023]
Abstract
Lead-free double perovskites, A2 M+ M'3+ X6 , are considered as promising alternatives to lead-halide perovskites, in optoelectronics applications. Although iodide (I) and bromide (Br) mixing is a versatile tool for bandgap tuning in lead perovskites, similar mixed I/Br double perovskite films have not been reported in double perovskites, which may be due to the large activation energy for ion migration. In this work, mixed Br/I double perovskites were realized utilizing an anion exchange method starting from Cs2 AgBiBr6 solid thin-films with large grain-size. The optical and structural properties were studied experimentally and theoretically. Importantly, the halide exchange mechanism was investigated. Hydroiodic acid was the key factor to facilitate the halide exchange reaction, through a dissolution-recrystallization process. In addition, the common organic iodide salts could successfully perform halide-exchange while retaining high mixed-halide phase stability and strong light absorption capability.
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Affiliation(s)
- Hua Wu
- Department of Chemistry – Ångström-LaboratoryInstitution of Physical ChemistryUppsala University75120UppsalaSweden
| | - Axel Erbing
- Department of PhysicsStockholm UniversityAlbaNova University Center10691StockholmSweden
| | - Malin B. Johansson
- Department of Chemistry – Ångström-LaboratoryInstitution of Physical ChemistryUppsala University75120UppsalaSweden
| | - Junxin Wang
- Department of Materials Science and EngineeringThe Ångström LaboratoryUppsala University75103UppsalaSweden
- Chemistry Research LaboratoryDepartment of ChemistryUniversity of Oxford12 Mansfield RoadOxfordOX1 3TAUK
| | - Chinnathambi Kamal
- Department of PhysicsStockholm UniversityAlbaNova University Center10691StockholmSweden
- Theory and Simulations Laboratory, HRDSRaja Ramanna Centre for Advanced Technology452013IndoreIndia
| | - Michael Odelius
- Department of PhysicsStockholm UniversityAlbaNova University Center10691StockholmSweden
| | - Erik M. J. Johansson
- Department of Chemistry – Ångström-LaboratoryInstitution of Physical ChemistryUppsala University75120UppsalaSweden
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Abstract
In the rapidly developing smart era, near-infrared luminescent materials have important applications in various fields that are closely related to people. Nag and co-workers provided a first codoping strategy to achieve efficient near-infrared photoluminescence in lead-free double perovskite materials. Through the introduction of Bi3+ ions, a new energy state is formed that leads to the absorption of lower-energy light. The excited state formed by this light absorption subsequently excites f-electrons of Er3+ or Yb3+ ions, and the relaxation of these f-electrons results in near-infrared photoluminescence. This may open a new chapter in the application of perovskites for infrared detection and human sensing.
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Affiliation(s)
- Chao Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, National Demonstration Center for Experimental Chemistry & Chemical engineering Education, National Virtual Simulation Experimental Teaching Center for Chemistry & Chemical engineering Education, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300354, China
| | - Guangjiu Zhao
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, National Demonstration Center for Experimental Chemistry & Chemical engineering Education, National Virtual Simulation Experimental Teaching Center for Chemistry & Chemical engineering Education, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300354, China
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7
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Ji F, Klarbring J, Wang F, Ning W, Wang L, Yin C, Figueroa JSM, Christensen CK, Etter M, Ederth T, Sun L, Simak SI, Abrikosov IA, Gao F. Lead-Free Halide Double Perovskite Cs 2 AgBiBr 6 with Decreased Band Gap. Angew Chem Int Ed Engl 2020; 59:15191-15194. [PMID: 32412132 PMCID: PMC7496408 DOI: 10.1002/anie.202005568] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Indexed: 01/06/2023]
Abstract
Environmentally friendly halide double perovskites with improved stability are regarded as a promising alternative to lead halide perovskites. The benchmark double perovskite, Cs2AgBiBr6, shows attractive optical and electronic features, making it promising for high‐efficiency optoelectronic devices. However, the large band gap limits its further applications, especially for photovoltaics. Herein, we develop a novel crystal‐engineering strategy to significantly decrease the band gap by approximately 0.26 eV, reaching the smallest reported band gap of 1.72 eV for Cs2AgBiBr6 under ambient conditions. The band‐gap narrowing is confirmed by both absorption and photoluminescence measurements. Our first‐principles calculations indicate that enhanced Ag–Bi disorder has a large impact on the band structure and decreases the band gap, providing a possible explanation of the observed band‐gap narrowing effect. This work provides new insights for achieving lead‐free double perovskites with suitable band gaps for optoelectronic applications.
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Affiliation(s)
- Fuxiang Ji
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden
| | - Johan Klarbring
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden
| | - Feng Wang
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden
| | - Weihua Ning
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden
| | - Linqin Wang
- Department of Chemistry, KTH Royal Institute of Technology, 10044, Stockholm, Sweden
| | - Chunyang Yin
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden
| | | | | | - Martin Etter
- Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - Thomas Ederth
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden
| | - Licheng Sun
- Department of Chemistry, KTH Royal Institute of Technology, 10044, Stockholm, Sweden.,State Key Laboratory of Fine Chemicals, Institute of Artificial Photosynthesis, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology, 116024, Dalian, China
| | - Sergei I Simak
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden
| | - Igor A Abrikosov
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden.,Materials Modeling and Development Laboratory, National University of Science and Technology "MISIS", Leninskii pr 4, 119049, Moscow, Russia
| | - Feng Gao
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, 58183, Linköping, Sweden
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