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Villeneuve-Faure C, Boumaarouf A, Shah V, Gammon PM, Lüders U, Coq Germanicus R. SiC Doping Impact during Conducting AFM under Ambient Atmosphere. Materials (Basel) 2023; 16:5401. [PMID: 37570104 PMCID: PMC10419843 DOI: 10.3390/ma16155401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/25/2023] [Accepted: 07/28/2023] [Indexed: 08/13/2023]
Abstract
The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the strong electric field that builds up around and below the AFM conductive tip in ambient atmosphere may lead to a direct anodic oxidation of the SiC surface due to the formation of a water nanomeniscus. In this paper, the underlying effects of the anodization are experimentally investigated for SiC multilayers with different doping levels by studying gradual SiC epitaxial-doped layers with nitrogen (N) from 5 × 1017 to 1019 at/cm3. The presence of the water nanomeniscus is probed by the AFM and analyzed with the force-distance curve when a negative bias is applied to the AFM tip. From the water meniscus breakup distance measured without and with polarization, the water meniscus volume is increased by a factor of three under polarization. AFM experimental results are supported by electrostatic modeling to study oxide growth. By taking into account the presence of the water nanomeniscus, the surface oxide layer and the SiC doping level, a 2D-axisymmetric finite element model is developed to calculate the electric field distribution nearby the tip contact and the current distributions at the nanocontact. The results demonstrate that the anodization occurred for the conductive regime in which the current depends strongly to the doping; its threshold value is 7 × 1018 at/cm3 for anodization. Finally, the characterization of a classical planar SiC-MOSFET by C-AFM is examined. Results reveal the local oxidation mechanism of the SiC material at the surface of the MOSFET structure. AFM topographies after successive C-AFM measurements show that the local oxide created by anodization is located on both sides of the MOS channel; these areas are the locations of the highly n-type-doped zones. A selective wet chemical etching confirms that the oxide induced by local anodic oxidation is a SiOCH layer.
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Affiliation(s)
- Christina Villeneuve-Faure
- LAPLACE (Laboratoire Plasma et Conversion d’Energie), Université de Toulouse, CNRS, UPS, INPT, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, France;
| | - Abdelhaq Boumaarouf
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
| | - Vishal Shah
- School of Engineering, University of Warwick, Coventry CV4 7AL, UK; (V.S.); (P.M.G.)
| | - Peter M. Gammon
- School of Engineering, University of Warwick, Coventry CV4 7AL, UK; (V.S.); (P.M.G.)
| | - Ulrike Lüders
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
| | - Rosine Coq Germanicus
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
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Pea M, De Seta M, Di Gaspare L, Persichetti L, Scaparro AM, Miseikis V, Coletti C, Notargiacomo A. Submicron Size Schottky Junctions on As-Grown Monolayer Epitaxial Graphene on Ge(100): A Low-Invasive Scanned-Probe-Based Study. ACS Appl Mater Interfaces 2019; 11:35079-35087. [PMID: 31475520 DOI: 10.1021/acsami.9b09681] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report on the investigation of the Schottky barrier (SB) formed at the junction between a metal-free graphene monolayer and Ge semiconductor substrate in the as-grown epitaxial graphene/Ge(100) system. In order to preserve the heterojunction properties, we defined submicron size graphene/Ge junctions using the scanning probe microscopy lithography in the local oxidation configuration, a low-invasive processing approach capable of inducing spatially controlled electrical separations among tiny graphene regions. Characteristic junction parameters were estimated from I-V curves obtained using conductive-atomic force microscopy. The current-voltage characteristics showed a p-type Schottky contact behavior, ascribed to the n-type to p-type conversion of the entire Ge substrate due to the formation of a large density of acceptor defects during the graphene growth process. We estimated, for the first time, the energy barrier height in the as-grown graphene/Ge Schottky junction (φB ≈ 0.45 eV) indicating an n-type doping of the graphene layer with a Fermi level ≈ 0.15 eV above the Dirac point. The SB devices showed ideality factor values around 1.5 pointing to the high quality of the heterojunctions.
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Affiliation(s)
- Marialilia Pea
- Institute for Photonics and Nanotechnologies , CNR , 00156 Rome , Italy
| | - Monica De Seta
- Dipartimento di Scienze , Università degli Studi Roma TRE , 00146 Rome , Italy
| | - Luciana Di Gaspare
- Dipartimento di Scienze , Università degli Studi Roma TRE , 00146 Rome , Italy
| | - Luca Persichetti
- Dipartimento di Scienze , Università degli Studi Roma TRE , 00146 Rome , Italy
| | | | - Vaidotas Miseikis
- Center for Nanotechnology Innovation@NEST , IIT , 56127 Pisa , Italy
| | - Camilla Coletti
- Center for Nanotechnology Innovation@NEST , IIT , 56127 Pisa , Italy
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Emboras A, Alabastri A, Ducry F, Cheng B, Salamin Y, Ma P, Andermatt S, Baeuerle B, Josten A, Hafner C, Luisier M, Nordlander P, Leuthold J. Atomic Scale Photodetection Enabled by a Memristive Junction. ACS Nano 2018; 12:6706-6713. [PMID: 29939718 DOI: 10.1021/acsnano.8b01811] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The optical control of atomic relocations in a metallic quantum point contact is of great interest because it addresses the fundamental limit of "CMOS scaling". Here, by developing a platform for combined electronics and photonics on the atomic scale, we demonstrate an optically controlled electronic switch based on the relocation of atoms. It is shown through experiments and simulations how the interplay between electrical, optical, and light-induced thermal forces can reversibly relocate a few atoms and enable atomic photodetection with a digital electronic response, a high resistance extinction ratio (70 dB), and a low OFF-state current (10 pA) at room temperature. Additionally, the device introduced here displays an optically induced pinched hysteretic current (optical memristor). The photodetector has been tested in an experiment with real optical data at 0.5 Gbit/s, from which an eye diagram visualizing millions of detection cycles could be produced. This demonstrates the durability of the realized atomic scale devices and establishes them as alternatives to traditional photodetectors.
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Abstract
The atom sets an ultimate scaling limit to Moore's law in the electronics industry. While electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling, similar to electronics, is only limited by the atom. More precisely, we introduce an electrically controlled plasmonic switch operating at the atomic scale. The switch allows for fast and reproducible switching by means of the relocation of an individual or, at most, a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ratio of 9.2 dB and operation at room temperature up to MHz with femtojoule (fJ) power consumption for a single switch operation. This demonstration of an integrated quantum device allowing to control photons at the atomic level opens intriguing perspectives for a fully integrated and highly scalable chip platform, a platform where optics, electronics, and memory may be controlled at the single-atom level.
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Affiliation(s)
- Alexandros Emboras
- Institute of Electromagnetic Fields (IEF), ETH Zurich , 8092 Zurich, Switzerland
| | - Jens Niegemann
- Institute of Electromagnetic Fields (IEF), ETH Zurich , 8092 Zurich, Switzerland
| | - Ping Ma
- Institute of Electromagnetic Fields (IEF), ETH Zurich , 8092 Zurich, Switzerland
| | - Christian Haffner
- Institute of Electromagnetic Fields (IEF), ETH Zurich , 8092 Zurich, Switzerland
| | - Andreas Pedersen
- Computational Nanoelectronics Group, ETH Zurich , 8092 Zurich, Switzerland
| | - Mathieu Luisier
- Computational Nanoelectronics Group, ETH Zurich , 8092 Zurich, Switzerland
| | - Christian Hafner
- Institute of Electromagnetic Fields (IEF), ETH Zurich , 8092 Zurich, Switzerland
| | - Thomas Schimmel
- Institute of Applied Physics and Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT) , 76128 Karlsruhe, Germany
| | - Juerg Leuthold
- Institute of Electromagnetic Fields (IEF), ETH Zurich , 8092 Zurich, Switzerland
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Song HZ, Usuki T, Ohshima T, Sakuma Y, Kawabe M, Okada Y, Takemoto K, Miyazawa T, Hirose S, Nakata Y, Takatsu M, Yokoyama N. Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique. Nanoscale Res Lett 2006; 1:160. [PMCID: PMC3246671 DOI: 10.1007/s11671-006-9012-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
An atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs). Presently, the site precision is as good as ± 1.5 nm and the size fluctuation is within ± 5% with the minimum controllable lateral diameter of 20 nm. With the ability of producing tightly packed and differently sized QDs, sophisticated QD arrays can be controllably fabricated for the application in quantum computing. The optical quality of such site-controlled QDs is found comparable to some conventionally self-assembled semiconductor QDs. The single dot photoluminescence of site-controlled InAs/InP QDs is studied in detail, presenting the prospect to utilize them in quantum communication as precisely controlled single photon emitters working at telecommunication bands.
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Affiliation(s)
- HZ Song
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
| | - T Usuki
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
| | - T Ohshima
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
| | - Y Sakuma
- Nanomaterials Laboratory, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
| | - M Kawabe
- Nanomaterials Laboratory, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
| | - Y Okada
- Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki, 305-8773, Japan
| | - K Takemoto
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
| | - T Miyazawa
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
| | - S Hirose
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
| | - Y Nakata
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
| | - M Takatsu
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
| | - N Yokoyama
- Nanotechnology Research center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa, 243-0197, Japan
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