A Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping.
NANOSCALE RESEARCH LETTERS 2009;
5:243-6. [PMID:
20651924 PMCID:
PMC2893778 DOI:
10.1007/s11671-009-9472-x]
[Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2009] [Accepted: 10/14/2009] [Indexed: 05/19/2023]
Abstract
We demonstrate a novel method to fabricate an axial p-n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm-3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.
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