Quantification of UV Light-Induced Spectral Response Degradation of CMOS-Based Photodetectors

High-energy radiation is known to potentially impact the optical performance of silicon-based sensors adversely. Nevertheless, a proper characterization and quantification of possible spectral response degradation effects due to UV stress is technically challenging. On one hand, typical illumination methods via UV lamps provide a poorly defined energy spectrum. On the other hand, a standardized measurement methodology is also missing. This work provides an approach where well-defined energy spectrum UV stress conditions are guaranteed via a customized optical set up, including a laser driven light source, a monochromator, and a non-solarizing optical fiber. The test methodology proposed here allows performing a controlled UV stress between 200 nm and 400 nm with well-defined energy conditions and offers a quantitative overview of the impact on the optical performance in CMOS-based photodiodes, along a wavelength range from 200 to 1100 nm and 1 nm step. This is of great importance for the characterization and development of new sensors with a high and stable UV spectral response, as well as for implementation of practical applications such as UV light sensing and UV-based sterilization.

Planar Cation Passivation on Colloidal Quantum Dots Enables High-Performance 0.35-1.8 µm Broadband TFT Imager

Solution-processed colloidal quantum dots (CQDs) are promising candidates for broadband photodetectors from visible light to shortwave infrared (SWIR). However, large-size PbS CQDs sensitive to longer SWIR are mainly exposed with nonpolar (100) facets on the surface, which lack robust passivation strategies. Herein, an innovative passivation strategy that employs planar cation, is introduced to enable face-to-face coupling on (100) facets and strengthen halide passivation on (111) facets. The defect density of CQDs film (Eg ≈ 0.74 eV) is reduced from 2.74 × 1015 to 1.04  × 1015 cm-3 , coupled with 0.1 eV reduction in the activation energy of defects. The resultant CQDs photodiodes exhibit a low dark current density of 14 nA cm-2 with a high external quantum efficiency (EQE) of 62%, achieving a linear dynamic range of 98 dB, a -3dB bandwidth of 103 kHz and a detectivity of 4.7 × 1011 Jones. The comprehensive performance of the CQDs photodiodes outperforms previously reported CQDs photodiodes operating at >1.6 µm. By monolithically integrated with thin-film transistor (TFT) readout circuit, the broadband CQDs imager covering 0.35-1.8 µm realizes the functions including silicon wafer perspectivity and material discrimination, showing its potential for wide range of applications.

Next-Generation Photodetectors beyond Van Der Waals Junctions

With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.

Black Phosphorus Molybdenum Disulfide Midwave Infrared Photodiodes with Broadband Absorption-Increasing Metasurfaces

Black phosphorus (BP) has been established as a promising material for room temperature midwave infrared (MWIR) photodetectors. However, many of its attractive optoelectronic properties are often observable only at smaller film thicknesses, which inhibits photodetector absorption and performance. In this work, we show that metasurface gratings increase the absorption of BP-MoS2 heterojunction photodiodes over a broad range of wavelengths in the MWIR. We designed, fabricated, and characterized metasurface gratings that increase absorption at selected wavelengths or broad spectral ranges. We evaluated the broadband metasurfaces by measuring the room temperature responsivity and specific detectivity of BP-MoS2 photodiodes at multiple MWIR wavelengths. Our results show that broadband metasurface gratings are a scalable approach for boosting the performance of BP photodiodes over large spectral ranges.

Multifunctional Magnetic Oxide-MoS2 Heterostructures on Silicon

Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La0.7 Sr0.3 MnO3 (LSMO) , a correlated manganite perovskite, and MoS2 are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS2 heterostructures. The LSMO-MoS2 heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS2 heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS2 heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS2 heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties.

Stretchable Photodiodes with Polymer-Engineered Semiconductor Nanowires for Wearable Photoplethysmography

Healthcare systems worldwide have been stressed to provide sufficient resources to serve the increasing and aging population in our society. The situation became more challenging at the time of pandemic. Technology advancement, especially the adoption of wearable health monitoring devices, has provided an important supplement to current clinical equipment. Most health monitoring devices are rigid, however, human tissues are soft. Such a difference has prohibited intimate contact between the two and jeopardized wearing comfortableness, which hurdles measurement accuracy especially during longtime usage. Here, we report a soft and stretchable photodiode that can conformally adhere onto the human body without any pressure and measure cardiovascular variables for an extended period with higher reliability than commercial devices. The photodiode used a composite light absorber consisting of an organic bulk heterojunction embedded into an elastic polymer matrix. It is discovered that the elastic polymer matrix not only improves the morphology of the bulk heterojunction for obtaining the desired mechanical properties but also alters its electronic band structure and improves the electrical properties that lead to a reduced dark current and enhanced photovoltage in the stretchable photodiode. The work has demonstrated high fidelity measurements and longtime monitoring of heat rate variability and oxygen saturation, potentially enabling next-generation wearable photoplethysmography devices for point-of-care diagnosis of cardiovascular diseases in a more accessible and affordable way.

Tex Se1-x Photodiode Shortwave Infrared Detection and Imaging

Short-wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short-wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low-cost, high-performance, and high-stability Te_x Se_{1- x} short-wave infrared photodiode detector is reported. The Te_x Se_{1- x} thin film is fabricated through CMOS-compatible low-temperature evaporation and post-annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad-spectrum response of 300-1600 nm, a room-temperature specific detectivity of 1.0 × 10¹⁰ Jones, a -3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te-based photodiode devices and a dark current density 7 orders of magnitude smaller than Te-based photoconductive and field-effect transistor devices. With a simple Si₃ N₄ packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized Te_x Se_{1- x} photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS-compatible infrared imaging chips.

Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor

Nowadays, optical systems play an important role in communications. Dual depletion PIN photodiodes are common devices that can operate in different optical bands, depending on the chosen semiconductors. However, since semiconductor properties vary with the surrounding conditions, some optical devices/systems can act as sensors. In this research work, a numerical model is implemented to analyze the frequency response of this kind of structure. It considers both transit time and capacitive effects, and can be applied to compute photodiode frequency response under nonuniform illumination. The InP-In0.53Ga0.47As photodiode is usually used to convert optical into electrical power at wavelengths around 1300 nm (O-band). This model is implemented considering an input frequency variation of up to 100 GHz. The focus of this research work was essentially the determination of the device's bandwidth from the computed spectra. This was performed at three different temperatures: 275 K, 300 K, and 325 K. The aim of this research work was to analyze if a InP-In0.53Ga0.47As photodiode can act as a temperature sensor, to detect temperature variations. Furthermore, the device dimensions were optimized, to obtain a temperature sensor. The optimized device, for a 6 V applied voltage and an active area of 500 μm2, had a total length of 2.536 μm, in which 53.95% corresponded to the absorption region. In these conditions, if the temperature increases 25 K from the room temperature, one should expect a bandwidth increase of 8.374 GHz, and if it decreases 25 K from that reference, the bandwidth should reduce by 3.620 GHz. This temperature sensor could be incorporated in common InP photonic integrated circuits, which are commonly used in telecommunications.

A Universal Microscopic Patterned Doping Method for Perovskite Enables Ultrafast, Self-Powered, Ultrasmall Perovskite Photodiodes

Novel metal halide perovskite is proven to be a promising optoelectronic material. However, fabricating microscopic perovskite devices is still challenging because the perovskite is soluble with the photoresist, which conflicts with conventional microfabrication technology. The size of presently reported perovskite devices is about 50 µm. Limited by the large size of perovskite optoelectronic devices, they cannot be readily adopted in the fields of imaging, display, etc. Herein a universal microscopic patterned doping method is proposed, which can realize microscale perovskite devices. Rather than by the conventional doping method, in this study the local Fermi level of perovskite is modulated by the redistributing intrinsic ion defects via a polling voltage. A satisfactorily stable polarized ion distribution can be achieved by optimization of the perovskite material and polling voltage, resulting in ultrafast (40 µs), self-powered microscale (2 µm) photodiodes. This work sheds light on a route to fabricate integrated perovskite optoelectronic chips.

Etch and Print: Graphene-Based Diodes for Silicon Technology

The graphene-silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene's integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-effective fabrication technique, based on inkjet printing, for the realization of printed graphene-silicon rectifying devices. The printed graphene-silicon diodes show an ON/OFF ratio higher than 3 orders of magnitude and a significant photovoltaic effect, resulting in a fill factor of ∼40% and a photocurrent efficiency of ∼2%, making the devices suitable for both electronic and optoelectronic applications. Finally, we demonstrate large-area pixeled photodetectors and compatibility with back-end-of-line fabrication processes.

Zero Bias Operation: Photodetection Behaviors Obtained by Emerging Materials and Device Structures

Zero-biased photodetectors have desirable characteristics for potentially next-generation devices, including high efficiency, rapid response, and low power operation. In particular, the detector efficiency can be improved simply by changing the electrode contact geometry or morphological structure of materials, which give unique properties such as energy band bending, photo absorbance and electric field distribution. In addition, several combinations of materials enable or disable the operation of selective wavelengths of light detection. Herein, such recent progresses in photodetector operating at zero-bias voltage are reviewed. Considering the advantages and promises of these low-power photodetectors, this review introduces various zero-bias implementations and reviews the key points.

Multidimensional Perovskites for High Detectivity Photodiodes

Low-dimensional perovskites attract increasing interest due to tunable optoelectronic properties and high stability. Here, it is shown that perovskite thin films with a vertical gradient in dimensionality result in graded electronic bandgap structures that are ideal for photodiode applications. Positioning low-dimensional, vertically-oriented perovskite phases at the interface with the electron blocking layer increases the activation energy for thermal charge generation and thereby effectively lowers the dark current density to a record-low value of 5 × 10^-9  mA cm^-2 without compromising responsivity, resulting in a noise-current-based specific detectivity exceeding 7 × 10¹² Jones at 600 nm. These multidimensional perovskite photodiodes show promising air stability and a dynamic range over ten orders of magnitude, and thus represent a new generation of high-performance low-cost photodiodes.

Fast Near-Infrared Photodetection Using III-V Colloidal Quantum Dots

Colloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II-VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III-Vs-if their surface chemistry can be mastered-offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm² V^-1 s^-1 ) with a 4× reduction in permittivity compared to PbS CQDs. The resulting photodiodes achieve a response time faster than 2 ns-the fastest photodiode among previously reported CQD photodiodes-combined with an external quantum efficiency (EQE) of 30% at 940 nm.

Energy-Band Engineering by Remote Doping of Self-Assembled Monolayers Leads to High-Performance IGZO/p-Si Heterostructure Photodetectors

Metal oxide semiconductors are of great interest for enabling advanced photodetectors. However, operational instability and the absence of an appropriate doping technique hinder practical development and commercialization. Here, a strategy is proposed to dramatically increase the conventional photodetection performance, having superior stability in operational and environmental atmospheres. By performing energy-band engineering through an octadecylphosphonic acid (ODPA) self-assembled-monolayer-based doping treatment, the proposed indium-gallium-zinc oxide (IGZO)/p-Si heterointerface devices exhibit greatly enhance the photoresponsive characteristics, including a photoswitching current ratio with a 100-fold increase, and photoresponsivity and detectivity with a 15-fold increase each. The observed ODPA doping effects are investigated through comprehensive analysis with X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). Furthermore, the proposed photodetectors, fabricated at a 4 in. wafer scale, demonstrate its excellent operation robustness with consistent performance over 237 days and 20 000 testing cycles.

Optoionic Sensing

The eye converts an optical signal to an ionic signal. This transduction is mimicked here using a photodiode in contact with ionic conductors, such as hydrogels. Photons generate electron-hole pairs in the photodiode. The photodiode/hydrogel interface forms capacitive coupling so that movements of electrons and holes in the photodiode induce movements of ions in the hydrogels. The hydrogels can be readily made stretchable and biocompatible to mimic the function of nerves. When light is turned on and off, the voltage between the hydrogels responds within 10 ms, comparable to the response in the human eye. A photosensitive skin is demonstrated to generate a voltage in response to light but not to stretch. Furthermore, a photosensitive actuation is demonstrated to mimic the light-triggered reflex, such as blinking of the eye and camouflage of the skin. Optoionic transduction has potential applications for wearable devices, implantable devices, and robotics.

Combining Modulated Techniques for the Analysis of Photosensitive Devices

Small-perturbation techniques such as impedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy (IMPS), and intensity-modulated photovoltage spectroscopy (IMVS) are useful tools to characterize and model photovoltaic and photoelectrochemical devices. While the analysis of the impedance spectra is generally carried out using an equivalent circuit, the intensity-modulated spectroscopies are often analyzed through the measured characteristic response times. This makes the correlation between the two methods of analysis generally unclear. In this work, by taking into consideration the absorptance and separation efficiency, a unified theoretical framework and a procedure to combine the spectral analysis of the three techniques are proposed. Such a joint analysis of IS, IMPS, and IMVS spectra greatly reduces the sample space of possible equivalent circuits to model the device and allows obtaining parameters with high reliability. This theoretical approach is applied in the characterization of a silicon photodiode to demonstrate the validity of this methodology, which shows great potential to improve the quality of analysis of spectra obtained from frequency domain small-perturbation methods.

Self-Powered Low-Cost UVC Sensor Based on Organic-Inorganic Heterojunction for Partial Discharge Detection

Power outages caused by the aging of high-voltage power facilities can cause significant economic and social damage. To prevent such problems, it is necessary to implement a widespread and sustainable monitoring system. Partial discharge (PD) is a preliminary symptom of power equipment aging accompanying the light, typically in the UV range. UVC (200-280 nm) is more useful than UVA and UVB because of low interference from the environment owing to its solar-blindness by the stratosphere. Therefore, to realize a wide-range and durable diagnosis system, it is necessary to develop sensors that can selectively detect UVC, while enabling mass production at low-cost and low power consumption. Here, a solution-processable photodiode sensor that is inexpensive, mass-producible, and self-powered with selective UVC detection is developed. The optoelectronic characteristics of photodiode consisting of organic p-polymer and inorganic n-ZnO nanoparticles are systematically studied to determine the optimum p-type polymer and its thickness. The device shows high-performance: fast response time (rise/fall time: 36.6/37.0 ms) and high spectral response in the UVC region (maximum responsivity of 20 mA W^-1 ) under self-powered operation. Furthermore, the practical application of the device to detect PD signals with a visual alarm system under UVC release conditions is demonstrated.

Planar Multilayered 2D GeAs Schottky Photodiode for High-Performance Visible-Near-Infrared Photodetection

Novel group IV - V 2D semiconductors (e.g., GeAs and SiAs) have arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has a wide tunable band gap, excellent thermodynamic stability, and strong in-plane anisotropy. However, their photonic and optoelectronic properties have not been extensively explored so far. This work demonstrates a broadband back-to-back metal-semiconductor-metal (MSM) Schottky photodiode with asymmetric contact geometries based on multilayered 2D GeAs. The photodetector exhibited a Schottky barrier height (SBH) in the range of 0.40-0.49 eV. Additionally, it showed a low dark current of 1.8 nA with stable, reproducible, and excellent broadband spectral response from UV to optical communication wavelengths. The highest measured responsivity in the visible is 905 A/W at 660 nm wavelength and 98 A/W for 1064 nm near-infrared at an applied voltage of -3 V and zero back gate. Most notably, the planner configuration of this GeAs photodetector showed a low detector capacitance below 1.2 pf and low voltage operation (<1 V). The stability and broadband response of the device are promising for this 2D material's application in advanced optoelectronic devices.

Engineering Band-Type Alignment in CsPbBr3 Perovskite-Based Artificial Multiple Quantum Wells

Semiconductor heterostructures of multiple quantum wells (MQWs) have major applications in optoelectronics. However, for halide perovskites-the leading class of emerging semiconductors-building a variety of bandgap alignments (i.e., band-types) in MQWs is not yet realized owing to the limitations of the current set of used barrier materials. Here, artificial perovskite-based MQWs using 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), tris-(8-hydroxyquinoline)aluminum, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline as quantum barrier materials are introduced. The structures of three different five-stacked perovskite-based MQWs each exhibiting a different band offset with CsPbBr₃ in the conduction and valence bands, resulting in a variety of MQW band alignments, i.e., type-I or type-II structures, are shown. Transient absorption spectroscopy reveals the disparity in charge carrier dynamics between type-I and type-II MQWs. Photodiodes of each type of perovskite artificial MQWs show entirely different carrier behaviors and photoresponse characteristics. Compared with bulk perovskite devices, type-II MQW photodiodes demonstrate a more than tenfold increase in the rectification ratio. The findings open new opportunities for producing halide-perovskite-based quantum devices by bandgap engineering using simple quantum barrier considerations.

Emerging Opportunities for Electrostatic Control in Atomically Thin Devices

Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.

Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

Photodiodes and integrated optical receivers operating at 1.55 micrometer (μm) wavelength are crucial for long-haul communication and data transfer systems. In this paper, we report C-band InAs quantum dash (Qdash) waveguide photodiodes (PDs) with a record-low dark current of 5 pA, a responsivity of 0.26 A/W at 1.55 μm, and open eye diagrams up to 10 Gb/s. These Qdash-based PDs leverage the same epitaxial layers and processing steps as Qdash lasers and can thus be integrated with laser sources for power monitors or amplifiers for preamplified receivers, manifesting themselves as a promising alternative to their InGaAs and Ge counterparts in low-power optical communication links.

TISSUE IMMUNE CELLS AND THEIR ROLE IN THE HEALING PROCESS OF INFECTED RADIATION ULCERS UNDER THE IMPACT OF PHOTODYNAMIC THERAPY (EXPERIMENTAL STUDY)

OBJECTIVE

to study the effect of antibacterial photodynamic therapy (PDT) on the dynamics of tissue neutrophilic leukocytes CD18 and tissue macrophages ED1 in the tissues of infected radiation ulcer during the stages of sponta- neous healing and in the treatment of PDTMaterials and methods. Infected radiation ulcer was modeled by local X-ray irradiation of the rat thigh skin at a dose of 85.0 Gy, followed by applying to the surface of the ulcer bacterial suspension of S. аureus. PDT was performed using a «Barva-LED/630» photonic apparatus and a methylene blue photosensitizer. The effect of PDT on the state of cellular immunity was determined using an immunohistochemical method based on the quantitative indices of neutrophilic leukocytes CD18 and ED1 macrophages during the stages of healing of an infected radiation ulcer.

RESULTS

In the course of spontaneous healing of the ulcer (control I), the dynamics of changes in the relative vo- lume of tissue neutrophil leukocytes CD18 and ED1 macrophages in the lesion zone, a decrease in the CD18 / ED1 index more than 2 times indicated that switching of the neutrophil response to macrophage occurred before 52nd days of observations. When infected with S. аureus X-ray (control II), the switching of the neutrophil response to the macrophage did not occur during the entire observation period. When using PDT in the case of S. аureus infected ulcer (experimental group), the decrease in the CD18 / ED1 index was determined from the 21st day of observation.

CONCLUSIONS

The positive effect of the antibacterial PDT method of infected S. аureus radiation ulcers was manifes- ted by complete microbial decontamination of the wound, reduction of phases of the wound process, complete hea- ling of radiation ulcers.The use of PDT has led to the death of bacteria, a decrease in the number of neutrophilic leukocytes and an increase in macrophages in the lesion area, the switching of the neutrophilic response to the reaction of monocyte-macrophage cells in the early stages of healing.

Gas Detection Using Portable Deep-UV Absorption Spectrophotometry: A Review

Several gas molecules of environmental and domestic significance exhibit a strong deep-UV absorption. Therefore, a sensitive and a selective gas detector based on this unique molecular property (i.e., absorption at a specific wavelength) can be developed using deep-UV absorption spectrophotometry. UV absorption spectrometry provides a highly sensitive, reliable, self-referenced, and selective approach for gas sensing. This review article addresses the recent progress in the application of deep-UV absorption for gas sensing owing to its inherent features and tremendous potentials. Applications, advancements, and challenges related to UV emission sources, gas cells, and UV photodetectors are assessed and compared. We present the relevant theoretical aspects and challenges associated with the development of portable sensitive spectrophotometer. Finally, the applications of UV absorption spectrometry for ozone, NO₂, SO₂, and aromatic organic compounds during the last decades are discussed and compared. A portable UV absorption spectrophotometer can be developed by using LEDs, hollow core waveguides (HCW), and UV photodetectors (i.e., photodiodes). LED provides a portable UV emission source with low power input, low-intensity drifts, low cost, and ease of alignment. It is a quasi-chromatic UV source and covers the absorption band of molecules without optical filters for absorbance measurement of a target analyte. HCWs can be applied as a miniature gas cell for guiding UV radiation for measurement of low gas concentrations. Photodiodes, on the other hand, offer a portable UV photodetector with excellent spectral selectivity with visible rejection, minimal dark current, linearity, and resistance against UV-aging.

An Ultraviolet Sensor and Indicator Module Based on p-i-n Photodiodes

The monolithic integration of an ultraviolet (UV) sensor and warning lamp would reduce the cost, volume, and footprint, in comparison to a hybrid combination of discrete components. We constructed a module comprising a monolithic sensor indicator device based on basic p–i–n (PIN) photodiodes and a transimpedance amplifier. GaN-based light-emitting diodes (LEDs) with an indium-tin oxide (ITO) current-spreading layer and PIN photodiodes without ITO deposition on the light-receiving area, were simultaneously fabricated. The resultant incident photon-to-electron conversion efficiencies of the PIN photodiodes at UV wavelengths were significantly higher than those of the reverse-biased LEDs. The photocurrent signals of the PIN photodiode were then converted to voltage signals to drive an integrated visible LED, which functioned as an indicator. The more the ambient UV-light intensity exceeded a specified level, the brighter the glow of the LED. The responsivities of 0.20 and 0.16 A/W were obtained at 381 and 350 nm, respectively, under a bias voltage of 5 V. We also addressed the epitaxial structural details that can affect the collection efficiency of the photocurrent generated by UV light absorption. The crosstalk between the PIN photodiode and LEDs (of various center-to-center distances) was measured.

Achieving High-Quality Sn-Pb Perovskite Films on Complementary Metal-Oxide-Semiconductor-Compatible Metal/Silicon Substrates for Efficient Imaging Array

Although Sn-Pb perovskites sensing near-ultraviolet-visible-near-infrared light could be an attractive alternative to silicon in photodiodes and imaging, there have been no clear studies on such devices constructed on metal/silicon substrates, hindering their direct integration with complementary metal-oxide semiconductor (CMOS) and silicon electronics. Typically, high surface roughness and severe pinholes of Sn-rich binary perovskites make it difficult for them to fulfill the requirements of efficient photodiodes and imaging. These issues cause inherently high dark current and poor (dark and photo-) current uniformity. Herein, we propose and demonstrate the room-temperature crystallization in the Sn-rich binary perovskite system to effectively control film crystallization kinetics. With experimental and theoretical studies of the crystallization mechanism, we successfully tune the density and location of nanocrystals in precursor films to achieve compact nanocrystals, which coalesce into high-quality (smooth, dense, and pinhole-free) perovskites with intensified preferred orientation and decreased trap density. The high-quality perovskites reduce dark current and improve (dark and photo-) current uniformity of perovskite photodiodes on CMOS-compatible metal/silicon substrates. Meanwhile, self-powered devices achieve a high responsivity of 0.2 A/W at 940 nm, a large dynamic range of 100 dB, and a fast fall time of 2.27 μs, exceeding those of most silicon-based imaging sensors. Finally, a 6 × 6 pixel integrated photodiode array is successfully demonstrated to realize the imaging application. The work contributes to understanding the fundamentals of the crystallization of Sn-rich binary perovskites and advancing perovskite integration with Si-based electronics.

High-Performance Photodiode Based on Atomically Thin WSe2 /MoS2 Nanoscroll Integration

Self-assembled structures of 2D materials with novel physical and chemical properties, such as the good electrical and optoelectrical performance in nanoscrolls, have attracted a lot of attention. However, high photoresponse speed as well as high responsivity cannot be achieved simultaneously in the nanoscrolls. Here, a photodiode consisting of single MoS₂ nanoscrolls and a p-type WSe₂ is demonstrated and shows excellent photovoltaic characteristics with a large open-circuit voltage of 0.18 V and high current intensity. Benefiting from the heterostructure, the dark current is suppressed resulting in an increased ratio of photocurrent to dark current (two orders of magnitude higher than the single MoS₂ nanoscroll device). Furthermore, it yields high responsivity of 0.3 A W^-1 (corresponding high external quantum efficiency of ≈75%) and fast response time of 5 ms, simultaneously. The response speed is increased by three orders of magnitude over the single MoS₂ nanoscroll device. In addition, broadband photoresponse up to near-infrared could be achieved. This atomically thin WSe₂ /MoS₂ nanoscroll integration not only overcomes the disadvantage of MoS₂ nanoscrolls, but also demonstrates a single nanoscroll-based heterostructure with high performance, promising its potential in the future optoelectronic applications.

A Review: Photonic Devices Used for Dosimetry in Medical Radiation

Numerous instruments such as ionization chambers, hand-held and pocket dosimeters of various types, film badges, thermoluminescent dosimeters (TLDs) and optically stimulated luminescence dosimeters (OSLDs) are used to measure and monitor radiation in medical applications. Of recent, photonic devices have also been adopted. This article evaluates recent research and advancements in the applications of photonic devices in medical radiation detection primarily focusing on four types; photodiodes – including light-emitting diodes (LEDs), phototransistors—including metal oxide semiconductor field effect transistors (MOSFETs), photovoltaic sensors/solar cells, and charge coupled devices/charge metal oxide semiconductors (CCD/CMOS) cameras. A comprehensive analysis of the operating principles and recent technologies of these devices is performed. Further, critical evaluation and comparison of their benefits and limitations as dosimeters is done based on the available studies. Common factors barring photonic devices from being used as radiation detectors are also discussed; with suggestions on possible solutions to overcome these barriers. Finally, the potentials of these devices and the challenges of realizing their applications as quintessential dosimeters are highlighted for future research and improvements.

High-Speed Colloidal Quantum Dot Photodiodes via Accelerating Charge Separation at Metal-Oxide Interface

With ever-growing technological demands in the imaging sensor industry for autonomous driving and augmented reality, developing sensors that can satisfy not only image resolution but also the response speed becomes more challenging. Herein, the focus is on developing a high-speed photosensor capable of obtaining high-resolution, high-speed imaging with colloidal quantum dots (QDs) as the photosensitive material. In detail, high-speed QD photodiodes are demonstrated with rising and falling times of τ_r = 28.8 ± 8.34 ns and τ_f = 40 ± 9.81 ns, respectively, realized by fast separation of electron-hole pairs due to the action of internal electric field at the QD interface, mainly by the interaction between metal oxide and the QD's ligands. Such energy transfer relations are analyzed and interpreted with time-resolved photoluminescence measurements, providing physical understanding of the device and working principles.

Nano-Subsidence-Assisted Precise Integration of Patterned Two-Dimensional Materials for High-Performance Photodetector Arrays

The spatially precise integration of arrays of micropatterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO₂ substrates represents an attractive, low-cost system-on-chip strategy toward the realization of extended functions in silicon microelectronics. However, the reliable integration of such atomically thin arrays on planar patterned surfaces has proven challenging due to their poor adhesion to underlying substrates, as ruled by weak van der Waals interactions. Here, we report on an integration method utilizing the flexibility of the atomically thin crystals and their physical subsidence in liquids, which enables the reliable fabrication of the micropatterned 2D materials/Si arrays. Our photodiode devices display peak sensitivity as high as 0.35 A/W and external quantum efficiency (EQE) of ∼90%. The nano-subsidence technique represents a viable path to on-chip integration of 2D crystals onto silicon for advanced microelectronics.

Miniature Spectroscopes with Two-Dimensional Guided-Mode Resonant Metal Grating Filters Integrated on a Photodiode Array

A small spectroscope with 25 color sensors was fabricated by combining metamaterial color filters and Si photodiodes. The metamaterial color filters consisted of guided-mode resonant metal gratings with subwavelength two-dimensional periodic structures. Transmittance characteristics of the color filters were designed to obtain peak wavelengths proportional to grating periods. For each color sensor, a peak wavelength of the spectral sensitivity could be tuned in the range of visible wavelengths by adjusting each grating period. By performing spectrum reconstruction using Tikhonov regularization, the spectrum of an incident light was obtained from the signal of photodiodes. Several monochromatic lights were made incident on the fabricated device and the spectral characteristics of the incident light were reconstructed from the output signals obtained from the respective color sensors. The peak wavelengths of the reconstructed spectra were in good agreement with the center wavelengths of the monochromatic lights.

Air-Stable and Self-Driven Perovskite Photodiodes with High On/Off Ratio and Swift Photoresponse

Recent years have witnessed rapid developments in organic-inorganic hybrid perovskites, among which 2D Ruddlesden-Popper (RP) perovskites stand out due to their outstanding ambient stability. In photodetector applications, 2D RP perovskites are mostly limited to lateral device configuration because of their preferred in-plane charge transportation within quantum well structures. In this work, the low-temperature solution construction of 2D RP perovskite-based photodiodes in vertical device architecture is demonstrated. The paradigm phenylethylamine (PEA) spacer cation-based 2D perovskites are fabricated and optimized by exploiting a combination of a NH₄ Cl additive and dimethyl sulfoxide solvent (DMSO) solvent. They show increased crystallinity, extended photoluminescence lifetimes, and importantly a generation of 3D phases embedded within 2D perovskites, which efficiently promotes charge transfer. As a result, the photodetectors exhibit a high on/off ratio up to 2 × 10⁴ , a large photocurrent of 0.34 mA cm^-2 , and rapid rise (5.8 ms) and decay time (4.6 ms). Of critical importance is the outstanding film/device stabilities demonstrated by storage in air (at 25 °C with 60% relative humidity) for 15 days as well as under UV illumination for 1.5 h and after 1500 bending cycles on flexible substrate.

Enhanced Performance of Ge Photodiodes via Monolithic Antireflection Texturing and α-Ge Self-Passivation by Inverse Metal-Assisted Chemical Etching

Surface antireflection micro and nanostructures, normally formed by conventional reactive ion etching, offer advantages in photovoltaic and optoelectronic applications, including wider spectral wavelength ranges and acceptance angles. One challenge in incorporating these structures into devices is that optimal optical properties do not always translate into electrical performance due to surface damage, which significantly increases surface recombination. Here, we present a simple approach for fabricating antireflection structures, with self-passivated amorphous Ge (α-Ge) surfaces, on single crystalline Ge (c-Ge) surface using the inverse metal-assisted chemical etching technology (I-MacEtch). Vertical Schottky Ge photodiodes fabricated with surface structures involving arrays of pyramids or periodic nano-indentations show clear improvements not only in responsivity, due to enhanced optical absorption, but also in dark current. The dark current reduction is attributed to the Schottky barrier height increase and self-passivation effect of the i-MacEtch induced α-Ge layer formed on top of the c-Ge surface. The results demonstrated in this work show that MacEtch can be a viable technology for advanced light trapping and surface engineering in Ge and other semiconductor based optoelectronic devices.

Photodetectors Based on Organic-Inorganic Hybrid Lead Halide Perovskites

Recent years have witnessed skyrocketing research achievements in organic-inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs-based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single-component perovskites in terms of different micromorphologies are discussed, namely, 3D thin-film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite-based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs-based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites-based photodetectors.

Photodynamic therapy effect on healing of radiation skin ulcer infected with pseudomonas aeruginosa

OBJECTIVE

To reveal the effect of photodynamic therapy on the healing of experimental radiation skin ulcers infect ed with Pseudomonas aeruginosa.

MATERIALS AND METHODS

The infected radionuclide was modeled by local X ray irradiation of the rat's hip skin at a dose of 85.0 Gy, followed by the application of Pseudomonas aeruginosa bacterial suspension to the surface of the ulcer. Photodynamic therapy (CTD) was performed with the help of a photon apparatus «Barva LED/630» and a photosen sitizer of methylene blue. The effect of PDT on the rate and quality of healing of an infected radionuclide was deter mined by comparing the histological and morphometric study of skin from the region of ulcer in animals from the control and treated groups of PDT.

RESULTS AND CONCLUSIONS

The presence of Pseudomonas aeruginosa in the radiation sickness caused an increase in the area of the wound cavity compared with the non infected radionuclide and to a significant inhibition of its healing processes. The addition of the infection factor reduced the activity of the reparative processes in the radiation sick ness by 20 % compared with the uninfected. The effect of photodynamic therapy contributed to complete healing on average one month earlier than in control groups.

Symmetrization of the Crystal Lattice of MAPbI3 Boosts the Performance and Stability of Metal-Perovskite Photodiodes

Semiconducting lead triiodide perovskites (APbI₃ ) have shown remarkable performance in applications including photovoltaics and electroluminescence. Despite many theoretical possibilities for A⁺ in APbI₃ , the current experimental knowledge is largely limited to two of these materials: methylammonium (MA⁺ ) and formamidinium (FA⁺ ) lead triiodides, neither of which adopts the ideal, cubic perovskite structure at room temperature. Here, a volume-based criterion is proposed for cubic APbI₃ to be stable, and two perovskite materials MA_1-x EA_x PbI₃ (MEPI, EA⁺ = ethylammonium) and MA_1-y DMA_y PbI₃ (MDPI, DMA⁺ = dimethylammonium) are introduced. Powder and single-crystal X-ray diffraction (XRD) results reveal that MEPI and MDPI are solid solutions possessing the cubic perovskite structure, and the EA⁺ and DMA⁺ cations play similar roles in the symmetrization of the crystal lattice of MAPbI₃ . Single crystals of MEPI and MDPI are grown and made into plates of a range of thicknesses, and then into metal-perovskite photodiodes. These devices exhibit tripled diffusion lengths and about tenfold enhancement in stability against moisture, both relative to the current benchmark MAPbI₃ . In this study, the systematic approach to materials design and device fabrication greatly expands the candidate pool of perovskite semiconductors, and paves the way for high-performance, single-crystal perovskite devices including solar cells and light emitters.

Highly Sensitive and Broadband Organic Photodetectors with Fast Speed Gain and Large Linear Dynamic Range at Low Forward Bias

Photodetectors with high photoelectronic gain generally require a high negative working voltage and a very low environment temperature. They also exhibit low response speed and narrow linear dynamic range (LDR). Here, an organic photodiode is demonstrated, which shows a large amount of photon to electron multiplication at room temperature with highest external quantum efficiency (EQE) from ultraviolet (UV) to near-infrared region of 5.02 × 10³ % (29.55 A W^-1 ) under a very low positive voltage of 1.0 V, accompanied with a fast response speed and a high LDR from 10^-7 to 10¹ mW cm^-2 . At a relatively high positive bias of 10 V, the EQE is up to 1.59 × 10⁵ % (936.05 A W^-1 ). Inversely, no gain is found at negative bias. The gain behavior is exactly similar to a bipolar phototransistor, which is attributed to the photoinduced release of accumulated carriers. The devices at a low voltage exhibit a normalized detectivity (D*) over 10¹⁴ Jones by actual measurements, which is about two or three order of magnitudes higher than that of the highest existing photodetectors. These pave a new way for realization of high sensitive detectors with fast response toward the single photon detection.

Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures on a wafer scale with an atomically sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly efficient photodetector arrays were fabricated, based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust, with a response time of 60 μs. Importantly, the device shows no sign of degradation after 1 million cycles of operation. We also carried out numerical simulations to understand the underlying device working principles. Our study establishes a new approach to produce controllable, robust, and large-area 2D heterostructures and presents a crucial step for further practical applications.

Low noise, IR-blind organohalide perovskite photodiodes for visible light detection and imaging

Solution-processed organohalide perov-skite photodiodes that have performance metrics matching silicon, but are infrared-blind are reported. The perovskite photodiodes operate in the visible band, have low dark current and noise, high specific detectivity, large linear dynamic range, and fast temporal response. Their properties make them promising candidates for imaging applications.

Organic light detectors: photodiodes and phototransistors

While organic electronics is mostly dominated by light-emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on virtually every substrate, which might enable innovative optoelectronic systems to be targeted for instance in the field of imaging, optical communications or biomedical sensing. In this review, after a brief resume of photogeneration basics and of devices operation mechanisms, we offer a broad overview of recent progress in the field, focusing on photodiodes and phototransistors. As to the former device category, very interesting values for figures of merit such as photoconversion efficiency, speed and minimum detectable signal level have been attained, and even though the simultaneous optimization of all these relevant parameters is demonstrated in a limited number of papers, real applications are within reach for this technology, as it is testified by the increasing number of realizations going beyond the single-device level and tackling more complex optoelectronic systems. As to phototransistors, a more recent subject of study in the framework of organic electronics, despite a broad distribution in the reported performances, best photoresponsivities outperform amorphous silicon-based devices. This suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto-electronic switch and memory.

Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10-4. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 1011 cmHz1/2/W and the quantum efficiency of 41% at 3.6 μm were obtained.PACS: 85.60.-q; 85.60.Gz; 85.35.-Be.

Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 10¹¹ cm^-3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 10¹⁶ to 10¹⁷ cm^-3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm² anode area.

Photodiode circuits for retinal prostheses

Photodiode circuits show promise for the development of high-resolution retinal prostheses. While several of these systems have been constructed and some even implanted in humans, existing descriptions of the complex optoelectronic interaction between light, photodiode, and the electrode/electrolyte load are limited. This study examines this interaction in depth with theoretical calculations and experimental measurements. Actively biased photoconductive and passive photovoltaic circuits are investigated, with the photovoltaic circuits consisting of one or more diodes connected in series, and the photoconductive circuits consisting of a single diode in series with a pulsed bias voltage. Circuit behavior and charge injection levels were markedly different for platinum and sputtered iridium-oxide film (SIROF) electrodes. Photovoltaic circuits were able to deliver 0.038 mC/cm(2) (0.75 nC/phase) per photodiode with 50- μm platinum electrodes, and 0.54-mC/cm(2) (11 nC/phase) per photodiode with 50-μ m SIROF electrodes driven with 0.5-ms pulses of light at 25 Hz. The same pulses applied to photoconductive circuits with the same electrodes were able to deliver charge injections as high as 0.38 and 7.6 mC/cm(2) (7.5 and 150 nC/phase), respectively. We demonstrate photovoltaic stimulation of rabbit retina in-vitro, with 0.5-ms pulses of 905-nm light using peak irradiance of 1 mW/mm(2). Based on the experimental data, we derive electrochemical and optical safety limits for pixel density and charge injection in various circuits. While photoconductive circuits offer smaller pixels, photovoltaic systems do not require an external bias voltage. Both classes of circuits show promise for the development of high-resolution optoelectronic retinal prostheses.

Heterointegration of Pt/Si/Ag Nanowire Photodiodes and Their Photocatalytic Properties

Photocatalyst mediated photoelectrochemical processes can make use of the photogenerated electrons and holes onsite for photocatalytic redox reactions, and enable the harness and conversion of solar energy into chemical energy, in analogy to natural photosynthesis. However, the photocatalysts available to date are limited by either poor efficiency in the visible light range or insufficient photoelectrochemical stability. We show that a Pt/Si/Ag nanowire heterostructure can be rationally synthesized to integrate a nanoscale metal-semiconductor Schottky diode encased in a protective insulating shell with two exposed metal catalysts. The synthesis of Pt/Si/Ag nanowire diodes involves a scalable process including the formation of silicon nanowire array through wet chemical etching, electrodeposition of platinum and photoreduction of silver. We further demonstrated that the Pt/Si/Ag diodes exhibited highly efficient photocatalytic activity for a wide range of applications including environmental remediation and solar fuel production in the visible range. In this article, photodegradation of indigo carmine and 4-nitrophenol were used to evaluate the photoactivity of Pt/Si/Ag diodes. The Pt/Si/Ag diodes also show high activity for photoconversion of formic acid into carbon dioxide and hydrogen.

Which Photodiode to Use: A Comparison of CMOS-Compatible Structures

While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n(+)/p-sub, n-well/p-sub and p(+)/n-well/p-sub. All structures were fabricated in a 0.5 mum 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated-the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well/p-sub diode performed best in terms of sensitivity (an improvement of 3.5 x and 1.6 x over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1.5 x and 1.2 x improvement over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) while the p(+)/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity.

The Candela and Photometric and Radiometric Measurements

The national measurement system for photometric and radiometric quantities is presently based upon techniques that make these quantities traceable to a high-accuracy cryogenic radiometer. The redefinition of the candela in 1979 provided the opportunity for national measurement laboratories to base their photometric measurements on optical detector technology rather than on the emission from high-temperature blackbody optical sources. The ensuing technical developments of the past 20 years, including the significant improvements in cryogenic radiometer performance, have provided the opportunity to place the fundamental maintenance of photometric quantities upon absolute detector based technology as was allowed by the 1979 redefinition. Additionally, the development of improved photodetectors has had a significant impact on the methodology in most of the radiometric measurement areas. This paper will review the status of the NIST implementation of the technical changes mandated by the 1979 redefinition of the candela and its effect upon the maintenance and dissemination of optical radiation measurements.

Steady-State Response of Silicon Radiation Detectors of the Diffused P-N Junction Type to X rays. II: Photodiode Mode of Operation

The response to x rays of silicon radiation detectors of the p-n junction type was investigated with special consideration of their dependence on the applied voltage. In agreement with theory, the photocurrent, I g , was found to consist of a voltage-independent part mainly determined by the average diffusion length of minority carriers in the base layer, and a voltage-dependent part which is proportional to the width of the depletion region, w. Due to the voltage dependence of w, I g increases with increasing voltage applied, but its relative change produced by different voltages is independent of exposure rate and quality of radiation. Exposure rate and energy dependence of I g expressed in relative values are thus independent of applied voltage. Silicon radiation detectors, used as photodiodes can therefore be useful for monitoring of radiations at exposure rates larger than 1 R/min, taking advantage of the possibility to increase current sensitivity by increasing the voltage V and to increase the voltage signal by increasing the load resistance R L . There are however limitations in increasing V and R L . because of the increasing noise with increasing dark current and some dependence of measured current signals on R L . The temperature coefficient of I g is positive and independent of R L , but shows some small voltage dependence. In the temperature range between 25 and 50 °C, the average temperature coefficient is approximately 0.35 percent per degree centigrade. A value of the average diffusion length of minority carriers in the base layer has been derived from the measured voltage dependence of I g .