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Li Y, Li F, Yu Z, Tamilavan V, Oh CM, Jeong WH, Shen X, Lee S, Du X, Yang E, Ahn Y, Hwang IW, Lee BR, Park SH. Effective Small Organic Molecule as a Defect Passivator for Highly Efficient Quasi-2D Perovskite Light-Emitting Diodes. Small 2024:e2308847. [PMID: 38174599 DOI: 10.1002/smll.202308847] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/13/2023] [Indexed: 01/05/2024]
Abstract
The use of a small organic molecular passivator is proven to be a successful strategy for producing higher-performing quasi-2D perovskite light-emitting diodes (PeLEDs). The small organic molecule can passivate defects on the grain surround and surface of perovskite crystal structures, preventing nonradiative recombination and charge trapping. In this study, a new small organic additive called 2, 8-dibromodibenzofuran (diBDF) is reported and examines its effectiveness as a passivating agent in high-performance green quasi-2D PeLEDs. The oxygen atom in diBDF, acting as a Lewis base, forms coordination bonds with uncoordinated Pb2+ , so enhancing the performance of the device. In addition, the inclusion of diBDF in the quasi-2D perovskite results in a decrease in the abundance of low-n phases, hence facilitating efficient carrier mobility. Consequently, PeLED devices with high efficiency are successfully produced, exhibiting an external quantum efficiency of 19.9% at the emission wavelength of 517 nm and a peak current efficiency of 65.0 cd A-1 .
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Affiliation(s)
- Ying Li
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Fuqiang Li
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Zhongkai Yu
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | | | - Chang-Mok Oh
- Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Woo Hyeon Jeong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Xinyu Shen
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Seongbeom Lee
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
| | - Xiangrui Du
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Eunhye Yang
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Yoomi Ahn
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - In-Wook Hwang
- Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Bo Ram Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sung Heum Park
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
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Fu Y, Zhan H, Zhang D, Cheng Y, Wang L, Qin C. Insight into Diphenyl Phosphine Oxygen-Based Molecular Additives as Defect Passivators toward Efficient Quasi-2D Perovskite Light-Emitting Diodes. ACS Appl Mater Interfaces 2023; 15:10877-10884. [PMID: 36795030 DOI: 10.1021/acsami.2c19646] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The introduction of additives has become an important method for enhancing the device performance of quasi-two-dimensional perovskite light-emitting diodes. In this work, we systematically studied the electronic and spatial effects of molecular additives on defect passivation abilities using the methyl, hydrogen, and hydroxyl groups substituted three diphenyl phosphine oxygen additives. The electron-donating conjugation effect of the hydroxyl group on diphenylphosphinic acid (OH-DPPO) leads to a more electron-rich region in OH-DPPO, and the hydroxyl group has a moderate steric hindrance. All these factors endow it with best passivation ability than the other two additives. Furthermore, ion migration was suppressed due to hydrogen bonding between the hydroxyl group and Br. Ultimately, the OH-DPPO passivated devices achieved an external quantum efficiency of 22.44% and a 6-fold improvement in lifetime. These findings provide guidance for developing multifunctional additives in the field of perovskite optoelectronics.
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Affiliation(s)
- Yunxing Fu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Hongmei Zhan
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Dezhong Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Yanxiang Cheng
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Lixiang Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Chuanjiang Qin
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, China
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Wang C, Dai G, Wang J, Cui M, Yang Y, Yang S, Qin C, Chang S, Wu K, Liu Y, Zhong H. Low-Threshold Blue Quasi-2D Perovskite Laser through Domain Distribution Control. Nano Lett 2022; 22:1338-1344. [PMID: 35049298 DOI: 10.1021/acs.nanolett.1c04666] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quasi-2D perovskites, composed of self-organized quantum well structures, are emerging as gain materials for laser applications. Here we investigate the influence of domain distribution on the laser emission of CsPbCl1.5Br1.5-based quasi-2D perovskites. The use of 2,2-diphenylethylammonium bromide (DPEABr) as a ligand enables the formation of quasi-2D film with a large-n-dominated narrow domain distribution. Due to the reduced content of small-n domains, the incomplete energy transfer from small-n to large-n domains can be greatly addressed. Moreover, the photoinduced carriers can be concentrated on most of the large-n domains to reduce the local carrier density, thereby suppressing the Auger recombination. By controlling the domain distribution, we achieve blue amplified spontaneous emission and single-mode vertical-cavity surface-emitting lasing with low thresholds of 6.5 and 9.2 μJ cm-2, respectively. This work provides a guideline to design the domain distribution to realize low-threshold multicolor perovskite lasers.
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Affiliation(s)
- Chenhui Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Guang Dai
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- School of Science, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Junhui Wang
- State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Minghuan Cui
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
| | - Sirui Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Chaochao Qin
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Shuai Chang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Yufang Liu
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
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Abstract
Quasi-two dimensional (2D) organic-inorganic hybrid perovskites (OIHPs) have shown better ambient stability with decent solar cell performances. However, the power conversion efficiency of quasi-2D OIHPs is still below that of 3D polycrystalline perovskites. To understand the limitation of quasi-2D OIHPs, we explore charge carrier properties in 3D and quasi-2D perovskites using advanced scanning probe microscopy techniques. Kelvin probe force microscopy (KPFM) identifies slow degradation in quasi-2D perovskites by measuring photovoltage variations under thermal and humid conditions. Bias-driven photocurrent maps obtained by conductive-atomic force microscopy (c-AFM) measurements reveal local inhomogeneous conduction and hysteretic currents in quasi-2D perovskites while relatively uniform conductivity is observed on individual grains in the 3D perovskite counterparts. In addition, bias-driven KPFM and I-V measurements in the lateral Au electrode devices show higher charge carrier dynamics with stronger potential drop at the interfaces in the 3D perovskite than those of the quasi-2D perovskite devices. The combination of c-AFM and KPFM results confirm less ionic conduction in the quasi-2D perovskites as compared to the 3D perovskites. Our study elucidates underlying mechanisms behind the lower efficiency of quasi-2D perovskites, which is necessary for further development of efficient and stable perovskite-based devices.
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Affiliation(s)
- Dohyung Kim
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Mahshid Ahmadi
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
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Lai Z, Meng Y, Zhu Q, Wang F, Bu X, Li F, Wang W, Liu C, Wang F, Ho JC. High-Performance Flexible Self-Powered Photodetectors Utilizing Spontaneous Electron and Hole Separation in Quasi-2D Halide Perovskites. Small 2021; 17:e2100442. [PMID: 33891799 DOI: 10.1002/smll.202100442] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2021] [Revised: 02/21/2021] [Indexed: 06/12/2023]
Abstract
Although there are recent advances in many areas of quasi-2D halide perovskites, photodetectors based on these materials still cannot achieve satisfactory performance for practical applications where high responsivity, fast response, self-powered nature, and excellent mechanical flexibility are urgently desired. Herein, utilizing one-step spin-coating method, self-assemble quasi-2D perovskite films with graded phase distribution in the order of increasing number of metal halide octahedral layers are successfully prepared. Gradient type-II band alignments along the out-of-plane direction of perovskites with spontaneous separation of photo-generated electrons and holes are obtained and then employed to construct self-powered vertical-structure photodetectors for the first time. Without any driving voltage, the device exhibits impressive performance with the responsivity up to 444 mA W-1 and ultrashort response time down to 52 µs. With a bias voltage of 1.5 V, the device responsivity becomes 3463 mA W-1 with the response speed as fast as 24 µs. Importantly, the device's mechanical flexibility is greatly enhanced since the photocurrent prefers flowing through the metal halide octahedral layers between the top and bottom contact electrodes in the vertical device structure, being more tolerant to film damage. These results evidently indicate the potential of graded quasi-2D perovskite phases for next-generation optoelectronic devices.
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Affiliation(s)
- Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Qi Zhu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Fei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130021, China
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Xiuming Bu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Fangzhou Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing and Mold (Zhengzhou University), Ministry of Education, Zhengzhou, 450002, China
| | - Feng Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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You M, Wang H, Cao F, Zhang C, Zhang T, Kong L, Wang L, Zhao D, Zhang J, Yang X. Improving Efficiency and Stability in Quasi-2D Perovskite Light-Emitting Diodes by a Multifunctional LiF Interlayer. ACS Appl Mater Interfaces 2020; 12:43018-43023. [PMID: 32872769 DOI: 10.1021/acsami.0c11762] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Owing to the enlarged exciton binding energy and the ability to confine charge carriers compared to their three-dimensional (3D) counterparts, research on quasi-two-dimensional (quasi-2D) perovskite materials and the correlative application in light-emitting diodes (LEDs) has attracted considerable attention. However, high density of defects, exciton emission trapping, and unbalanced charge injection are still the main intractable obstacles to their further development and practical application. Herein, we report an efficient multifunctional interlayer, lithium fluoride (LiF), to boost the performance of green-emitting quasi-2D perovskite LEDs (PeLEDs) by simultaneously overcoming the aforementioned issues. The introduced LiF interlayer not only eliminates the defects at perovskite grain boundaries and the surface by reinforcing the chemical bonds with uncoordinated lead ions but also restrains the emission of perovskite from quenching triggered by the electron transport layer and reduces excess electron injections to effectively balance carriers in the device. As a result, the resulting green quasi-2D PeLED shows a maximum external quantum efficiency of 16.35%, which is the best value obtained for quasi-2D perovskite-based LEDs reported so far, with simultaneous improvement in the operating lifetime of the device.
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Affiliation(s)
- Mengqing You
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Haoran Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Fan Cao
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Chengxi Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Ting Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Dewei Zhao
- Institute of Solar Energy Materials and Devices, College of Materials Science and Engineering, Sichuan University, 24 South Section 1, Yihuan Road, Chengdu 610065, P. R. China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
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Ali MU, Miao J, Cai J, Perepichka DF, Yang H, Meng H. Boosting Efficiency and Curtailing the Efficiency Roll-Off in Green Perovskite Light-Emitting Diodes via Incorporating Ytterbium as Cathode Interface Layer. ACS Appl Mater Interfaces 2020; 12:18761-18768. [PMID: 32227978 DOI: 10.1021/acsami.0c00950] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) exhibit high external quantum efficiencies (EQEs), emerging as a next-generation lighting and display technology. Nevertheless, they suffer from severe efficiency roll-off at high luminance, particularly in the case of blue and green emissions, which is one of the major bottlenecks in their industrial applications. Here, we attack this problem using a rare-earth metal, Yb, as cathode interface layer (CIL) for green PeLEDs. By adopting a new device configuration of ITO/TFB/FA-based quasi-2D perovskite/TPBi/Yb/Ag, we achieved a peak current efficiency (CE) of 22.3 cd/A with a corresponding EQE of 5.28% and a high maximum luminance of 19 160 cd/m2. Importantly, the maximum CE of 22.0 cd/A at 2000 cd/m2 slightly decreased to 16.8 cd/A at 5000 cd/m2 and maintained a still-decent value of 12.0 cd/A at a high luminance of 10 000 cd/m2, exhibiting a remarkably low efficiency roll-off. Our Yb-incorporated devices significantly outperformed the PeLEDs containing conventional CILs, including Mg and Liq, in terms of peak efficiency, efficiency roll-off, and operational lifetime. We attribute this encouraging performance to barrier-free, efficient electron injection enabled by the low work function of Yb (2.6 eV), which led to a high electron current, nearly approaching the hole current in hole-dominant PeLEDs, as confirmed by the single-carrier device measurements. In addition, we also present Yb-incorporated PeLEDs containing Cs-based quasi-2D perovskite as the emissive layer, which displayed an impressive CE of 51.3 cd/A with a corresponding EQE of 16.4% and a maximum luminance of 14 240 cd/m2, and still demonstrated a reduced efficiency roll-off comparing to that of the Liq-based equivalent. These results unveil the inspiring prospects of Yb as an efficient CIL for PeLEDs toward high efficiency with curtailed roll-off.
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Affiliation(s)
- Muhammad Umair Ali
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Jingsheng Miao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Jinqiao Cai
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Dmitrii F Perepichka
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
| | - Huai Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Hong Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
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Xie Y, Yu H, Duan J, Xu L, Hu B. Enhancing Device Performance in Quasi-2D Perovskite ((BA) 2(MA) 3Pb 4I 13) Solar Cells Using PbCl 2 Additives. ACS Appl Mater Interfaces 2020; 12:11190-11196. [PMID: 32041406 DOI: 10.1021/acsami.9b21163] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quasi-2D Ruddlesden-Popper perovskites exhibit excellent photostability/environmental stability. However, the main drawback is their relatively low photovoltaic properties compared with three-dimensional perovskites. Herein, we demonstrated that chlorine-based additives via adjusting the proportion of PbI2 and PbCl2 in the precursor (BA)2(MA)3Pb4I13 (n = 4) solutions show an optimized device performance of over 15%, and the devices exhibit much improved humidity stability. Upon PbCl2 addition, the quasi-2D perovskites have larger and more compact grains, which result in high quality of films. The photoluminescence gives rise to a much prolonged lifetime under the PbCl2 additive, indicating fewer trap states to reduce the nonradiative recombination. The capacitance characteristics confirm that the PbCl2 additive can largely decrease the trap states in quasi-2D perovskite films. The capacitance-voltage characteristics indicate that using the PbCl2 additive decreases the charge accumulation toward increasing the charge collection in quasi-2D perovskite solar cells. Our work indicates that the addition of PbCl2 is an effective method to improve the device performance by reducing trap states and increasing charge collection toward developing high-performance quasi-2D perovskite devices.
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Affiliation(s)
- Yulin Xie
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
- School of Physics and Electronics, Huanggang Normal University, Huanggang 438000, China
| | - Huayang Yu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jiashun Duan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Ling Xu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Bin Hu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
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Guan Z, Shen D, Li M, Ma C, Chen WC, Cui X, Liu B, Lo MF, Tsang SW, Lee CS, Zhang W. Effects of Hydrogen Bonds between Polymeric Hole-Transporting Material and Organic Cation Spacer on Morphology of Quasi-Two-Dimensional Perovskite Grains and Their Performance in Light-Emitting Diodes. ACS Appl Mater Interfaces 2020; 12:9440-9447. [PMID: 31990178 DOI: 10.1021/acsami.9b20750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Perovskite is emerging as a novel emitter in solution-processed light-emitting diodes (LEDs). In these LEDs, morphology, especially the grain size of perovskite, plays a key role in determining electroluminescence performance. Several studies have shown that sizes of the perovskite grains can be controlled by the contact angle between the perovskite solution and the substrate. In this work, we found that in the quasi-two-dimensional (2D) system, the perovskite grain size can be substantially refined when there are hydrogen bonding between the perovskite's organic spacer and the substrates. In fact, for quasi-2D perovskite, with the presence of such hydrogen bond, its effects on the perovskite grain size overshadow the contact angle's effect. We demonstrated that perovskite with refined grains can form amine- or carbazole-based polymers which can form N···H hydrogen bonding with the perovskite's organic spacer. Using these polymers as hole-transporting layers on poly(3,4-ethylenedioxythiophene):polystyrene sulfonate, external quantum efficiency of CsPbBr3-based LEDs can be enhanced from 1.5 to 10.0% without passivation treatment. This work suggests that bonding between perovskite precursors and the substrate can have significant influence on the morphology of the final perovskite grains and their optoelectronic performance.
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Affiliation(s)
- Zhiqiang Guan
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Chemistry , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
- Department of Material Science and Engineering , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Dong Shen
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Chemistry , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Menglin Li
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Material Science and Engineering , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Chunqing Ma
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Chemistry , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Wen-Cheng Chen
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Chemistry , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Xiao Cui
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Chemistry , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Bin Liu
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Material Science and Engineering , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Ming-Fai Lo
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Chemistry , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Sai-Wing Tsang
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Material Science and Engineering , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Chun-Sing Lee
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Chemistry , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
| | - Wenjun Zhang
- Center of Super-Diamond and Advanced Films (COSDAF) , City University of Hong Kong , Kowloon , Hong Kong SAR 999077 , P. R. China
- Department of Material Science and Engineering , City University of Hong Kong , Kowloon 999077 , Hong Kong SAR , P. R. China
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10
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Liu Y, Duan J, Zhang J, Huang S, Ou-Yang W, Bao Q, Sun Z, Chen X. High Efficiency and Stability of Inverted Perovskite Solar Cells Using Phenethyl Ammonium Iodide-Modified Interface of NiO x and Perovskite Layers. ACS Appl Mater Interfaces 2020; 12:771-779. [PMID: 31854975 DOI: 10.1021/acsami.9b18217] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Hole transport layer NiOx-based inverted perovskite solar cells (PSCs) have advantages of simple fabrication, low temperature, and low cost. Furthermore, the p-type NiOx material compared to that of typical n-type SnOx for PSCs has better photostability potential due to its lower photocatalytic ability. However, the NiOx layer modified by some typical materials show relatively simple functions, which limit the synthesized performance of NiOx-based inverted PSCs. Phenethyl ammonium iodide (PEAI) was introduced to modify the NiOx/perovskite interface, which can synchronously contribute to better crystallinity and stability of the perovskite layer, passivating interface defects, formed quasi-two-dimensional PEA2PbI4 perovskite layers, and superior interface contact properties. The PCEs of PSCs with the PEAI-modified NiOx/perovskite interface was obviously increased from 20.31 from 16.54% compared to that of the reference PSCs. The PSCs with PEAI modification remained 75 and 72% of the original PCE values aging for 10 h at 85 °C and 65 days in a relative humidity of 15%, which are superior to the original PCE values (47 and 51%, respectively) for the reference PSCs. Therefore, PSCs with the PEAI-modified NiOx/perovskite interface show higher PCEs and better thermal stability and moisture resistance.
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11
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Xie M, Liu H, Chun F, Deng W, Luo C, Zhu Z, Yang M, Li Y, Li W, Yan W, Yang W. Aqueous Phase Exfoliating Quasi-2D CsPbBr 3 Nanosheets with Ultrahigh Intrinsic Water Stability. Small 2019; 15:e1901994. [PMID: 31250545 DOI: 10.1002/smll.201901994] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2019] [Indexed: 05/19/2023]
Abstract
All-inorganic cesium lead halide perovskite nanocrystals (NCs) have emerged as attractive optoelectronic materials due to the excellent optical and electronic properties. However, their environmental stability, especially in the presence of water, is still a significant challenge for their further commercialization. Here, ultrahigh intrinsically water-stable all-inorganic quasi-2D CsPbBr3 nanosheets (NSs) via aqueous phase exfoliation method are reported. Compared to conventional perovskite NCs, these unique quasi-2D CsPbBr3 nanosheets present an outstanding long-term water stability with 87% photoluminescence (PL) intensity remaining after 168 h under water conditions. Moreover, the photoluminescence quantum yields (PLQY) of quasi-2D CsPbBr3 NSs is up to 82.3%, and these quasi-2D CsPbBr3 NSs also present good photostability of keeping 85% PL intensity after 2 h under 365 nm UV light. Evidently, such quasi-2D perovskite NSs will open up a new way to investigate the intrinsic stability of all-inorganic perovskites and further promote the commercial development of perovskite-based optoelectronic and photovoltaic devices.
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Affiliation(s)
- Meilin Xie
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
| | - Huan Liu
- State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Fengjun Chun
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
| | - Wen Deng
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
| | - Chao Luo
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
| | - Zhihao Zhu
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
| | - Min Yang
- College of Chemistry and Life Science, Institute of Functional Molecules, Chengdu Normal University, Chengdu, 611130, China
| | - Yongmei Li
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
| | - Wen Li
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
| | - Wei Yan
- State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, 610209, China
| | - Weiqing Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
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12
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Dong R, Lan C, Xu X, Liang X, Hu X, Li D, Zhou Z, Shu L, Yip S, Li C, Tsang SW, Ho JC. Novel Series of Quasi-2D Ruddlesden-Popper Perovskites Based on Short-Chained Spacer Cation for Enhanced Photodetection. ACS Appl Mater Interfaces 2018; 10:19019-19026. [PMID: 29741083 DOI: 10.1021/acsami.8b03517] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Quasi two-dimensional (2D) layered organic-inorganic perovskite materials (e.g., (BA)2(MA) n-1Pb nI3 n+1; BA = butylamine; MA = methylamine) have recently attracted wide attention because of their superior moisture stability as compared with three-dimensional counterparts. Inevitably, hydrophobic yet insulating long-chained organic cations improve the stability at the cost of hindering charge transport, leading to the unsatisfied performance of subsequently fabricated devices. Here, we reported the synthesis of quasi-2D ( iBA)2(MA) n-1Pb nI3 n+1 perovskites, where the relatively pure-phase ( iBA)2PbI4 and ( iBA)2MA3Pb4I13 films can be obtained. Because of the shorter-branched chain of iBA as compared with that of its linear equivalent ( n-butylamine, BA), the resulting ( iBA)2(MA) n-1Pb nI3 n+1 perovskites exhibit much enhanced photodetection properties without sacrificing their excellent stability. Through hot-casting, the optimized ( iBA)2(MA) n-1Pb nI3 n+1 perovskite films with n = 4 give the significantly improved crystallinity, demonstrating the high responsivity of 117.09 mA/W, large on-off ratio of 4.0 × 102, and fast response speed (rise and decay time of 16 and 15 ms, respectively). These figure-of-merits are comparable or even better than those of state-of-the-art quasi-2D perovskite-based photodetectors reported to date. Our work not only paves a practical way for future perovskite photodetector fabrication via modulation of their intrinsic material properties but also provides a direction for further performance enhancement of other perovskite optoelectronics.
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Affiliation(s)
| | - Changyong Lan
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
| | | | - Xiaoguang Liang
- Shenzhen Research Institute , City University of Hong Kong , Shenzhen 518057 , P. R. China
| | - Xiaoying Hu
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
| | - Dapan Li
- Shenzhen Research Institute , City University of Hong Kong , Shenzhen 518057 , P. R. China
| | - Ziyao Zhou
- Shenzhen Research Institute , City University of Hong Kong , Shenzhen 518057 , P. R. China
| | - Lei Shu
- Shenzhen Research Institute , City University of Hong Kong , Shenzhen 518057 , P. R. China
| | - SenPo Yip
- Shenzhen Research Institute , City University of Hong Kong , Shenzhen 518057 , P. R. China
| | - Chun Li
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
| | | | - Johnny C Ho
- Shenzhen Research Institute , City University of Hong Kong , Shenzhen 518057 , P. R. China
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