Electron-Transport-Chain-Mediated Selective Growth of Gold Nanocrystals in the Intermembrane Space of Live Microbial Cells

Hybridization of microbial cells with inorganic nanoparticles that could dramatically improve cellular functions such as electron transfer has been realized by the random attachment or stochastic entry of the nanoparticles. Clearly, the selective growth of inorganic nanoparticles on target functional organelles is ideal for such hybridization. Here, we report the selective growth of gold nanocrystals in the intermembrane space (IMS) of Escherichia coli by exploiting the electron transport chain (ETC). We systematically show that gold ions are permeated through porins in the outer membrane of E. coli and further reduced to gold nanocrystals by the ETC in live E. coli. We directly observe that the resulting gold nanocrystals exist only in the IMS by transmission electron microscopy measurements of cross-sectioned E. coli. Molecular dynamics simulations suggest that once gold ions are reduced to small nuclei by the ETC, the nuclei can be stably physisorbed onto ETC complexes, further supporting the ETC-mediated growth. Finally, we show that the ATP synthesis of E. coli where gold nanocrystals are formed in the IMS is up to 9 times higher than that of E. coli alone. We believe that our work can significantly contribute to not only improving microbial metabolic functions for biological energy conversion but also restoring physiological dysfunctions of microbial cells for biomedicine.

Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation

Van der Waals heterostructures (vdWHSs) enable the fabrication of complex electronic devices based on two-dimensional (2D) materials. Ideally, these vdWHSs should be fabricated in a scalable and repeatable way and only in the specific areas of the substrate to lower the number of technological operations inducing defects and impurities. Here, we present a method of selective fabrication of vdWHSs via chemical vapor deposition by electron-beam (EB) irradiation. We distinguish two growth modes: positive (2D materials nucleate on the irradiated regions) on graphene and tungsten disulfide (WS₂) substrates, and negative (2D materials do not nucleate on the irradiated regions) on the graphene substrate. The growth mode is controlled by limiting the air exposure of the irradiated substrate and the time between irradiation and growth. We conducted Raman mapping, Kelvin-probe force microscopy, X-ray photoelectron spectroscopy, and density-functional theory modeling studies to investigate the selective growth mechanism. We conclude that the selective growth is explained by the competition of three effects: EB-induced defects, adsorption of carbon species, and electrostatic interaction. The method here is a critical step toward the industry-scale fabrication of 2D-materials-based devices.

Coupling Long-Range Facet Junction and Interfacial Heterojunction via Edge-Selective Deposition for High-Performance Z-Scheme Photocatalyst

The construction of photocatalytic systems that have strong redox capability, effective charge separation, and large reactive surfaces is of great scientific and practical interest. Herein, an edge-connected 2D/2D Z-scheme system that combines the facet junction and the interfacial heterojunction to achieve effective long-range charge separation and large reactive surface exposure is designed and fabricated. The heterostructure is realized by the selective growth of 2D-layered MoS₂ nanoflakes on the edge-sites of thin TiO₂ nanosheets via an Au-promoted photodeposition method. Attributed to the synergetic coupling of the facet junction and the interfacial heterojunction that assures the effective charge separation, and the tremendous but physically separated reactive sites offered by layered MoS₂ and highly-exposed (001) facets of TiO₂ , respectively, the artificial Z-scheme exhibits excellent photocatalytic performance in photodegradation tests. Moreover, the junctional plasmonic Au nanoclusters not only act as electron traps to promote the edge-selective synthesis but also generate "hot electrons" to further boost photocatalytic performance. The Z-scheme charge-flow direction in the heterostructure and the roles of electrons and holes are comprehensively studied using in situ irradiated X-ray photoelectron spectroscopy and photodegradation tests. This work offers a new insight into designing high-performance Z-scheme photocatalytic systems.

Selective Chemical Vapor Deposition Growth of WS2/MoS2 Vertical and Lateral Heterostructures on Gold Foils

Vertical and lateral heterostructures consisting of atomically layered two-dimensional (2D) materials exhibit intriguing properties, such as efficient charge/energy transfer, high photoresponsivity, and enhanced photocatalytic activities. However, the controlled fabrication of vertical or lateral heterojunctions on metal substrates remains challenging. Herein, we report a facile and controllable method for selective growth of WS₂/MoS₂ vertical or lateral heterojunctions on polycrystalline gold (Au) foil by tuning the gas flow rate of hydrogen (H₂). We find that lateral growth is favored without H₂, whereas vertical growth mode can be switched on by introducing 8–10 sccm H₂. In addition, the areal coverage of the WS₂/MoS₂ vertical heterostructures is tunable in the range of 12–25%. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) results demonstrate the quality and absence of cross-contamination of the as-grown heterostructures. Furthermore, we investigate the effects of the H₂ flow rate on the morphology of the heterostructures. These pave the way to develop unprecedented 2D heterostructures towards applications in (opto)electronic devices.

Universal Map of Gas-Dependent Kinetic Selectivity in Carbon Nanotube Growth

Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. In order to directly grow such nanotube arrays on wafers, control over kinetics and thermodynamics in tube-catalyst systems plays a key role, and further progress requires a comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we propose a universal kinetic model that decomposes the growth rates of nanotubes into the adsorption and removal of carbon atoms on the catalysts, and we provide its quantitative verification by ethanol-based isotope labeling experiments. While the removal of carbon from catalysts dominates the growth kinetics under a low supply of precursors, resulting in chirality-independent growth rates, our kinetic model and experiments demonstrate that chiral angle-dependent growth rates emerge when sufficient amounts of carbon and etching agents are cosupplied. The kinetic maps, as a product of generalizing the model, include five types of kinetic selectivity that emerge depending on the absolute quantities of gases with opposing effects. Our findings not only resolve discrepancies existing in the literature but also offer rational strategies to control the chirality, length, and density of nanotube arrays for practical applications.

Ultrahigh Charge Separation Achieved by Selective Growth of Bi4O5I2 Nanoplates on Electron-Accumulating Facets of Bi5O7I Nanobelts

Ultrahigh charge separation was observed in Bi₄O₅I₂/Bi₅O₇I two-dimensional (2D)/one-dimensional (1D) hierarchical structures (HSs) constructed by selective growth of 2D monocrystalline Bi₄O₅I₂ nanoplates on the electron-accumulating (100) facet of 1D monocrystalline Bi₅O₇I nanobelts. In addition to the presence of type-II heterojunction between Bi₄O₅I₂ and Bi₅O₇I elementary entities in 2D/1D HSs, the type-II (100)/(001) surface heterojunction in Bi₅O₇I nanobelt substrates was also confirmed by means of density functional theory (DFT) calculations and selective photoreduction/oxidation deposition experiments. The synergistic effect of two kinds of heterojunctions in Bi₄O₅I₂/Bi₅O₇I 2D/1D HSs endowed them with ultrahigh charge carrier separation and transfer characteristics. In contrast with the control sample (BB40-C) constructed by growing Bi₄O₅I₂ nanoplates on whole four sides of Bi₅O₇I nanobelts, Bi₄O₅I₂/Bi₅O₇I 2D/1D HSs demonstrated significantly enhanced charge transfer between Bi₅O₇I nanobelt substrates and Bi₄O₅I₂ nanoplates, owing to respective electron and hole accumulations on (100) and (001) facets of Bi₅O₇I substrates caused by (100)/(001) surface heterojunction. The enhanced separation behavior was successfully verified by steady/transient-state photoluminescence, electrochemical techniques, and photocatalytic degradation experiments. Based on the above effective charge separation of Bi₄O₅I₂/Bi₅O₇I 2D/1D HSs as well as the routine advantages for 2D/1D HSs, such as the excellent charge transport in monocrystalline elementary entities, much higher specific surface area, and enhanced light absorption by multiple reflections, the optimal BB40 HSs demonstrated ultrahigh photocatalytic performance than the control samples, whose apparent rates for Rhodamine B [or tetracycline hydrochloride (TC)] degradation were 7.1 (2.9 for TC), 10.3 (4.7 for TC), and 2.2 (1.7 for TC) times those of pristine Bi₅O₇I nanobelts, Bi₄O₅I₂ nanoplates, and BB40-C, respectively. It is hoped that this crystal facet selection during the heterostructure construction in this work could provide a new strategy or some enlightenment for the exploration of highly active 2D/1D HSs or other-dimensional heterostructure nanomaterials applied in the fields of photocatalysts, solar cells, sensors, and others.

Atomic-Level and Modulated Interfaces of Photocatalyst Heterostructure Constructed by External Defect-Induced Strategy: A Critical Review

Despite the existence of numerous photocatalyst heterostructures, their separation efficiency and charge flow precision remain low due to the poor study on interfacial properties. The photocatalysts with confined defects can effectively control the photogenerated carrier migration, but the metastability of such defects considerably decreases the photocatalyst stability. Meanwhile, the introduction of defective region can increase the coordinative unsaturation and delocalize local electrons to promote their interactions with the molecules/ions in that region. The selective growth of modulated heterogeneous interface by defect-induced strategy may not only increase the stability of defective structures, but also enhance the migration of interfacial charges. Using this method, photocatalytic heterostructures with low contact resistances and intimate interfaces are constructed to achieve the optimal charge migration in terms of efficiency and accuracy. In this work, the point, linear, and planar heterogeneous interfaces and related defect engineering techniques are discussed. Particularly, it is focused on the external, defect-induced interfacial heterogeneities with various spatial and dimensional configurations, which exhibit modulated and controllable interfacial properties. Furthermore, the main aspects of fabricating photocatalyst heterostructures by the defect-induced strategy, including the i) controllable generation of defects, ii) advanced characterization methods, and iii) elaborate construction of the minimal interface, are described.

Nucleation Control-Triggering Cocrystal Polymorphism of Charge-Transfer Complexes Differing in Physical and Electronic Properties

Binary charge-transfer complex polymorphs composed of perylene and 4,8-bis(dicyanomethylene)-4,8-dihydrobenzo-[1,2-b:4,5-b']-dithiophene (DTTCNQ) were synthesized separately via a simple artificial nucleation-tailoring method, in both macroscopic and microscopic cocrystal engineering manners. The two polymorphs were testified to be independently thermosalient in the solid state, and the specific self-assembly derived from homogeneous or heterogeneous nucleation by assistance of governable thermodynamic/kinetic drive, leading to a change in the ordered p-n stacking structure. The as-prepared polymorphic microcrystals afforded a significantly varied (opto)electronic property: high n-type transporting and good photoresponsivity for β-complex, and ambipolar transporting with ignorable photoresponsivity for α-complex, attributing to the different charge-transfer and supramolecular alignment. This work provides us a new route to the exploitation of donor-acceptor complex family, making it possible to develop functional materials and devices based on variable supramolecular binary structures.

Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter

2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe₂ and n-type MoSe₂ is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.

Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth

The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition (MPCVD) diamond is presented. Samples have been grown under quite different conditions of doping and methane concentration in order to identify and distinguish the factors involved in the defects generation. TEM is used to reveal threading dislocations and planar defects. Sources of dislocation generation have been evidenced: (i) doping level versus growth plane, and (ii) methane concentration. The first source of dislocations was shown to generate <110> Burgers vector dislocations above a critical boron concentration, while the second induces <112> type Burgers vector above a critical methane/hydrogen molar ratio. The latter is attributed to partial dislocations whose origin is related to the dissociation of perfect ones by a Shockley process. This dissociation generated stacking faults that likely resulted in penetration twins, which were also observed on these samples. Lateral growth performed at low methane and boron content did not exhibit any dislocation.

Selective Growth Synthesis of Ternary Janus Nanoparticles for Imaging-Guided Synergistic Chemo- and Photothermal Therapy in the Second NIR Window

Multifunctional therapeutic agents in the second near-infrared (NIR-II) window have attracted wide attention on account of their synergetic properties for effective cancer therapy. Here, we construct a selective growth strategy for the first time to fabricate ternary Janus nanoparticles (JNPs) containing hemispherical MnO₂ at one side and Au core covered with CuS shell at opposite side. The obtained ternary JNPs are further modified with poly(ethylene glycol)thiol to enhance the stability and biocompatibility (designated as PEG-CuS-Au-MnO₂ ternary JNPs). The MnO₂ domain with mesoporous structures can serve as hydrophobic drug carriers and magnetic resonance (MR) imaging contrast agents. Meanwhile, the Au segment is used for X-ray computed tomography (CT) imaging. Moreover, the PEG-CuS-Au-MnO₂ ternary JNPs can conduct hyperthermia at 1064 nm in NIR-II window to ablate tumors in deep tissue, which is ascribed to the localized surface plasmon resonance coupling effect of the Au core and CuS domain. All of the results reveal that PEG-CuS-Au-MnO₂ ternary JNPs not only exhibit pre-eminent CT/MR imaging capabilities, but also provide high chemo-photothermal antitumor efficacy under the guidance of CT/MR imaging. Taking together, the PEG-CuS-Au-MnO₂ ternary JNPs can be regarded as a prospective therapeutic nanoplatform for dual-modal imaging-guided synergistic chemo-photothermal cancer therapy in the NIR-II window.

Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States

Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.

Grains in Selectively Grown MoS2 Thin Films

Transition metal dichalcogenides (TMDCs) have recently been studied using various synthesis methods, such as chemical vapor deposition for large-scale production. Despite the realization of large-scale production with high material quality, a range of approaches have been made to solve the patterning issue of TMDCs focusing on the application of integrated devices; however, patterning is still under study to accurately represent nanoscale-sized patterns, as well as the desired positions and shapes. Here, an insulating substrate is treated selectively with O₂ plasma, and MoS₂ growth is induced in the superhydrophilic area. Selectively well-grown MoS₂ patterns are confirmed by atomic force microscopy and Raman and photoluminescence spectroscopy. In addition, the grain size, according to the growth size, and grain boundary are analyzed by annual dark field transmission electron microscopy (TEM) and spherical aberration-corrected scanning TEM to confirm the selective growth. An analysis of the device performance and the optical properties reveals an enhancement with increasing grain size. This method presents the path of the growth technique for patterning, as well as the direction that can be applied to devices and integrated circuits.

Shape Engineering Driven by Selective Growth of SnO2 on Doped Ga2O3 Nanowires

Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO₂/Ga₂O₃ complex nanostructures. Ga₂O₃ nanowires decorated with either crossing SnO₂ nanowires or SnO₂ particles have been obtained in a single step treatment by thermal evaporation. The reason for this dual behavior is related to the growth direction of trunk Ga₂O₃ nanowires. Ga₂O₃ nanowires grown along the [001] direction favor the formation of crossing SnO₂ nanowires. Alternatively, SnO₂ forms rhombohedral particles on [110] Ga₂O₃ nanowires leading to skewer-like structures. These complex oxide structures were grown by a catalyst-free vapor-solid process. When pure Ga and tin oxide were used as source materials and compacted powders of Ga₂O₃ acted as substrates, [110] Ga₂O₃ nanowires grow preferentially. High-resolution transmission electron microscopy analysis reveals epitaxial relationship lattice matching between the Ga₂O₃ axis and SnO₂ particles, forming skewer-like structures. The addition of chromium oxide to the source materials modifies the growth direction of the trunk Ga₂O₃ nanowires, growing along the [001], with crossing SnO₂ wires. The SnO₂/Ga₂O₃ junctions does not meet the lattice matching condition, forming a grain boundary. The electronic and optical properties have been studied by XPS and CL with high spatial resolution, enabling us to get both local chemical and electronic information on the surface in both type of structures. The results will allow tuning optical and electronic properties of oxide complex nanostructures locally as a function of the orientation. In particular, we report a dependence of the visible CL emission of SnO₂ on its particular shape. Orange emission dominates in SnO₂/Ga₂O₃ crossing wires while green-blue emission is observed in SnO₂ particles attached to Ga₂O₃ trunks. The results show that the Ga₂O₃-SnO₂ system appears to be a benchmark for shape engineering to get architectures involving nanowires via the control of the growth direction of the nanowires.

Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars

In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

Growth and Transfer of Seamless 3D Graphene-Nanotube Hybrids

Seamlessly connected graphene and carbon nanotube hybrids (GCNTs) have great potential as carbon platform structures in electronics due to their high conductivity and high surface area. Here, we introduce a facile method for making patterned GCNTs and their intact transfer onto other substrates. The mechanism for selective growth of vertically aligned CNTs (VA-CNTs) on the patterned graphene is discussed. The complete transfer of the GCNT pattern onto other substrates is possible because of the mechanical strength of the GCNT hybrids. Electrical conductivity measurements of the transferred GCNT structures show Ohmic contact through the VA-CNTs to graphene--evidence of its integrity after the transfer process.

Positionally selective growth of embryonic spinal cord neurites on muscle membranes

Motor neurons from distinct positions along the rostrocaudal axis generally innervate muscles or muscle fibers from corresponding axial levels. These topographic maps of connectivity are partially restored after denervation or transplantation under conditions in which factors of timing and proximity are eliminated. It is therefore likely that motor neurons and some intramuscular structures bear cues that bias synapse formation in favor of positionally matched partners. To localize these cues, we studied outgrowth of neurites from embryonic spinal cord explants on carpets of membranes isolated from perinatal rat muscles. Neurites from rostral (cervical) and caudal (lumbar) spinal cord slices exhibit distinct growth preferences. In many instances, rostrally derived neurites grew selectively on membranes from forelimb muscles or from a single thoracic muscle (the serratus anterior) when given a choice between these membranes and membranes from hindlimb muscles or laminin. Caudally derived neurites almost never exhibited such rostral preferences, but instead preferred membranes from hindlimb muscles or a single hindlimb muscle (the gluteus) to rostral muscles or laminin. Likewise, spinal neurites exhibited distinct position-related preferences for outgrowth on membranes of clonal myogenic cell lines derived from specific rostral and caudal muscles. Taken together these results suggest that the membranes of motor axons and myotubes bear complementary labels that vary with rostrocaudal position and regulate neuromuscular connectivity.