Electrical Polarity Modulation in V-Doped Monolayer WS2 for Homogeneous CMOS Inverters

As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n-type to ambipolar, then to p-type, and ultimately to a quasi-metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p-type dopants during chemical vapor deposition (CVD). The achievement of purely p-type field-effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V-doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm2/(Vs) and robust hole transport properties, facilitated by Te-Te (Se) portions and O-Te-O portions, respectively. The nanosphere lithography process is employed to create nanopatterned honeycomb TeSeO broadband photodetectors, demonstrating a high responsibility of 603 A/W, an ultrafast response of 5 μs, and superior mechanical flexibility. The p-type TeSeO system is highly adaptable, scalable, and reliable, which can address emerging technological needs that current semiconductor solutions may not fulfill.

Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance

High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.

mTOR-dependent loss of PON1 secretion and antiphospholipid autoantibody production underlie autoimmunity-mediated cirrhosis in transaldolase deficiency

Transaldolase deficiency predisposes to chronic liver disease progressing from cirrhosis to hepatocellular carcinoma (HCC). Transition from cirrhosis to hepatocarcinogenesis depends on mitochondrial oxidative stress, as controlled by cytosolic aldose metabolism through the pentose phosphate pathway (PPP). Progression to HCC is critically dependent on NADPH depletion and polyol buildup by aldose reductase (AR), while this enzyme protects from carbon trapping in the PPP and growth restriction in TAL deficiency. Although AR inactivation blocked susceptibility to hepatocarcinogenesis, it enhanced growth restriction, carbon trapping in the non-oxidative branch of the PPP and failed to reverse the depletion of glucose 6-phosphate (G6P) and liver cirrhosis. Here, we show that inactivation of the TAL-AR axis results in metabolic stress characterized by reduced mitophagy, enhanced overall autophagy, activation of the mechanistic target of rapamycin (mTOR), diminished glycosylation and secretion of paraoxonase 1 (PON1), production of antiphospholipid autoantibodies (aPL), loss of CD161+ NK cells, and expansion of CD38+ Ito cells, which are responsive to treatment with rapamycin in vivo. The present study thus identifies glycosylation and secretion of PON1 and aPL production as mTOR-dependent regulatory checkpoints of autoimmunity underlying liver cirrhosis in TAL deficiency.

Van der Waals nanomesh electronics on arbitrary surfaces

Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm²/Vs, ultrafast photoresponse below 3 μs in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands.

Contact Engineering of Halide Perovskites: Gold is Not Good Enough; Metalloid is Better

The operation stability of halide perovskite devices is the critical issue that impedes their commercialization. The main reasons are that the ambient H₂ O molecules can easily deteriorate the perovskites, while the metal electrodes react in different degrees with the perovskites. Herein, one kind of new electrode, the metalloids, is reported, which are much more stable than the conventional noble metals as electrical contacts for halide perovskites. The degradation mechanism of halide perovskites with noble metal electrodes is carefully studied and compared with the metalloid electrodes. It is found that the iodide ions can easily halogenate Cu and Ag in halide perovskites. Although Au is almost not halogenated, it can also decompose the perovskite film. On the contrary, after long-term storage, the metalloid electrodes remain intact on the perovskite film without any degradation. In addition, the long-time operation stability of the perovskite devices with metalloid electrodes is much higher than that of noble metals. First-principles calculations confirm the exceptional stability of the metalloid electrodes.This work explores the ultra-stable electrodes for halide perovskites, paving the way to the large-scale deployment of perovskite-based electronic devices.

Electrically Switchable Polarization in Bi2 O2 Se Ferroelectric Semiconductors

Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high-density integration. Here, a room-temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi₂ O₂ Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d₃₃ ) of 4.4 ± 0.1 pm V^-1 . The random orientations and electrically dependent polarization of the dipoles in Bi₂ O₂ Se are separately uncovered owing to the structural symmetry-breaking at room temperature. Specifically, the interplay between ferroelectricity and semiconducting characteristics of Bi₂ O₂ Se is explored on device-level operation, revealing the hysteresis behavior and memory window (MW) formation. Leveraging the ferroelectric polarization originating from Bi₂ O₂ Se, the fabricated device exhibits "smart" photoresponse tunability and excellent electronic characteristics, e.g., a high on/off current ratio > 10⁴ and a large MW to the sweeping range of 47% at V_GS  = ±5 V. These results demonstrate the synergistic combination of ferroelectricity with semiconducting characteristics in Bi₂ O₂ Se, laying the foundation for integrating sensing, logic, and memory functions into a single material system that can overcome the bottlenecks in von Neumann architecture.

Au-Seeded CsPbI3 Nanowire Optoelectronics via Exothermic Nucleation

Converting vapor precursors to solid nanostructures via a liquid noble-metal seed is a common vapor deposition principle. However, such a noble-metal-seeded process is excluded from the crystalline halide perovskite synthesis, mainly hindered by the growth mechanism shortness. Herein, powered by a spontaneous exothermic nucleation process (ΔH < 0), the Au-seeded CsPbI₃ nanowires (NWs) growth is realized based on a vapor-liquid-solid (VLS) growth mode. It is energetically favored that the Au seeds are reacted with a Pb vapor precursor to form molten Au-Pb droplets at temperatures down to 212 °C, further triggering the low-temperature VLS growth of CsPbI₃ NWs. More importantly, this Au-seeded process reduces in-bandgap trap states and consequently avoids Shockley-Read-Hall recombination, contributing to outstanding photodetector performances. Our work extends the powerful Au-seeded VLS growth mode to the emerging halide perovskites, which will facilitate their nanostructures with tailored material properties.

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS₂ nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 10⁴, fast response of 50 μs, and high detectivity of 1.64 × 10¹¹ Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.

Analysis of mutation status and homologous recombination deficiency in tumors of patients with germline BRCA1 or BRCA2 mutations and metastatic breast cancer: OlympiAD

BACKGROUND

Presence of a germline BRCA1 and/or BRCA2 mutation (gBRCAm) may sensitize tumors to poly(ADP-ribose) polymerase (PARP) inhibition via inactivation of the second allele, resulting in gene-specific loss of heterozygosity (gsLOH) and homologous recombination deficiency (HRD). Here we explore whether tissue sample testing provides an additional route to germline testing to inform treatment selection for PARP inhibition.

PATIENTS AND METHODS

In this prespecified exploratory analysis, BRCA1 and/or BRCA2 mutations in blood samples (gBRCAm) and tumor tissue (tBRCAm) were analyzed from patients with human epidermal growth factor receptor 2 (HER2)-negative metastatic breast cancer and known gBRCAm, enrolled in the phase III OlympiAD trial. The frequency and nature of tBRCAm, HRD score status [HRD-positive (score ≥42) versus HRD-negative (score <42) using the Myriad myChoice® CDx test] and rates of gsLOH were determined, and their impact on clinical efficacy (objective response rate and progression-free survival) was explored.

RESULTS

Tissue samples from 161/302 patients yielded tBRCAm, HRD and gsLOH data for 143 (47%), 129 (43%) and 125 (41%) patients, respectively. Concordance between gBRCAm and tBRCAm was 99%. gsLOH was observed in 118/125 (94%) patients [BRCA1m, 73/76 (96%); BRCA2m, 45/49 (92%)]. A second mutation event was recorded for two of the three BRCA1m patients without gsLOH. The incidence of HRD-negative was 16% (21/129) and was more common for BRCA2m (versus BRCA1m) and/or for hormone receptor-positive (versus triple-negative) disease. Olaparib antitumor activity was observed irrespective of HRD score.

CONCLUSIONS

gBRCAm identified in patients with HER2-negative metastatic breast cancer by germline testing in blood was also identified by tumor tissue testing. gsLOH was common, indicating a high rate of biallelic inactivation in metastatic breast cancer. Olaparib activity was seen regardless of gsLOH status or HRD score. Thus, additional tumor testing to inform PARP inhibitor treatment selection may not be supported for these patients.

Two-Step Chemical Vapor Deposition-Synthesized Lead-Free All-Inorganic Cs3Sb2Br9 Perovskite Microplates for Optoelectronic Applications

Lead-based halide perovskites (APbX₃, where A = organic or inorganic cation, X = Cl, Br, I) are suitable materials for many optoelectronic devices due to their many attractive properties. However, the concern of lead toxicity and the poor ambient and operational stability of the organic cation group greatly limit their practical utilization. Therefore, there has recently been great interest in lead-free, environment-friendly all-inorganic halide perovskites (IHPs). Sb and Sn are common species suggested to replace Pb for Pb-free IHPs. However, the large difference in the melting points of the precursor materials (e.g., CsBr and SbBr₃ precursors for Cs₃Sb₂Br₉) makes the chemical vapor deposition (CVD) growth of high-quality Pb-free IHPs a very challenging task. In this work, we developed a two-step CVD method to overcome this challenge and successfully synthesized Pb-free Cs₃Sb₂Br₉ perovskite microplates. Cs₃Sb₂Br₉ microplates ∼25 μm in size with the exciton absorption peak at ∼2.8 eV and a band gap of ∼2.85 eV were obtained. The microplates have a smooth hexagonal morphology and show a large Stokes shift of ∼450 meV and exciton binding energy of ∼200 meV. To demonstrate the applications of these microplates in optoelectronics, simple photoconductive devices were fabricated. These photodetectors exhibit a current on/off ratio of 2.36 × 10², a responsivity of 36.9 mA/W, and a detectivity of 1.0 × 10¹⁰ Jones with a fast response of rise and decay time of 61.5 and 24 ms, respectively, upon 450 nm photon irradiation. Finally, the Cs₃Sb₂Br₉ microplates also show good stability in ambient air without encapsulation. These results demonstrate that the 2-step CVD process is an effective approach to synthesize high-quality all-inorganic lead-free Cs₃Sb₂Br₉ perovskite microplates that have the potential for future high-performance optoelectronic device applications.

High-Performance Flexible Self-Powered Photodetectors Utilizing Spontaneous Electron and Hole Separation in Quasi-2D Halide Perovskites

Although there are recent advances in many areas of quasi-2D halide perovskites, photodetectors based on these materials still cannot achieve satisfactory performance for practical applications where high responsivity, fast response, self-powered nature, and excellent mechanical flexibility are urgently desired. Herein, utilizing one-step spin-coating method, self-assemble quasi-2D perovskite films with graded phase distribution in the order of increasing number of metal halide octahedral layers are successfully prepared. Gradient type-II band alignments along the out-of-plane direction of perovskites with spontaneous separation of photo-generated electrons and holes are obtained and then employed to construct self-powered vertical-structure photodetectors for the first time. Without any driving voltage, the device exhibits impressive performance with the responsivity up to 444 mA W^-1 and ultrashort response time down to 52 µs. With a bias voltage of 1.5 V, the device responsivity becomes 3463 mA W^-1 with the response speed as fast as 24 µs. Importantly, the device's mechanical flexibility is greatly enhanced since the photocurrent prefers flowing through the metal halide octahedral layers between the top and bottom contact electrodes in the vertical device structure, being more tolerant to film damage. These results evidently indicate the potential of graded quasi-2D perovskite phases for next-generation optoelectronic devices.

Tongxin formula protects H9c2 cardiomyocytes from cobalt chloride-induced hypoxic injury via inhibition of apoptosis

In this study, the effect of the Tongxin formula (TXF) on the apoptosis of H9c2 cardiomyocytes induced by cobalt chloride (CoCl₂) was investigated, and the potential mechanism was explored. A hypoxic injury model of H9c2 cardiomyocytes was established using CoCl₂. The cell viability was measured using a Cell Counting Kit-8 assay. The lactate dehydrogenase (LDH) release and caspase-3 activity were measured using spectrophotometry. The apoptosis was measured via Annexin V-FITC/PI staining and flow cytometry. The changes in the mitochondrial membrane potential were examined using immunofluorescence microscopy following the loading of JC-1 probes. The expressions of apoptosis-related proteins and key proteins in the phosphatidylinositol 3-kinase/protein kinase B (PI3K/Akt) pathway were examined via immunoblotting. The different TXF concentrations studied significantly improved the percentage of viability of cardiomyocytes with hypoxic injury, and the LDH release, apoptotic rate, caspase-3 activity, and levels of cleaved caspase-3 protein were reduced in the injured cells. Additionally, the TXF group had increased mitochondrial membrane potential, upregulated expression of Bcl-2 and p-Akt proteins, and significantly reduced expression of cleaved caspase-3 protein in the cells with hypoxic injury. Moreover, in the TXF group, the treatment significantly reduced the BAX protein expression, but the difference was not statistically significant compared with the CoCl2 group. In this study, TXF regulated the expression of apoptosis-related proteins, inhibited apoptosis, increased the mitochondrial membrane potential, and alleviated damage to the mitochondrial membrane, thereby protecting the cardiomyocytes from hypoxic injury. The underlying mechanism could be related to activation of the PI3K/Akt signaling pathway and upregulation of the Bcl-2 protein.

Androgen deprivation-induced elevated nuclear SIRT1 promotes prostate tumor cell survival by reactivation of AR signaling

The NAD⁺-dependent deacetylase, Sirtuin 1 (SIRT1) is involved in prostate cancer pathogenesis. However, the actual contribution is unclear as some reports propose a protective role while others suggest it is harmful. We provide evidence for a contextual role for SIRT1 in prostate cancer. Our data show that (i) mice orthotopically implanted with SIRT1-silenced LNCaP cells produced smaller tumors; (ii) SIRT1 suppression mimicked AR inhibitory effects in hormone responsive LNCaP cells; and (iii) caused significant reduction in gene signatures associated with E2F and MYC targets in AR-null PC-3 and E2F and mTORC1 signaling in castrate-resistant ARv7 positive 22Rv1 cells. Our findings further show increased nuclear SIRT1 (nSIRT1) protein under androgen-depleted relative to androgen-replete conditions in prostate cancer cell lines. Silencing SIRT1 resulted in decreased recruitment of AR to PSA enhancer selectively under androgen-deprivation conditions. Prostate cancer outcome data show that patients with higher levels of nSIRT1 progress to advanced disease relative to patients with low nSIRT1 levels. Collectively, we demonstrate that lowering SIRT1 levels potentially provides new avenues to effectively prevent prostate cancer recurrence.

Self-Anti-Stacking 2D Metal Phosphide Loop-Sheet Heterostructures by Edge-Topological Regulation for Highly Efficient Water Oxidation

2D metal phosphide loop-sheet heterostructures are controllably synthesized by edge-topological regulation, where Ni₂ P nanosheets are edge-confined by the N-doped carbon loop, containing ultrafine NiFeP nanocrystals (denoted as NiFeP@NC/Ni₂ P). This loop-sheet feature with lifted-edges prevents the stacking of nanosheets and induces accessible open channels for catalytic site exposure and gas bubble release. Importantly, these NiFeP@NC/Ni₂ P hybrids exhibit a remarkable oxygen evolution activity with an overpotential of 223 mV at 20 mA cm^-2 and a Tafel slope of 46.1 mV dec^-1 , constituting the record-high performance among reported metal phosphide electrocatalysts. The NiFeP@NC/Ni₂ P hybrids are also employed as both anode and cathode to achieve an alkaline electrolyzer for overall water splitting, delivering a current density of 10 mA cm^-2 with a voltage of 1.57 V, comparable to that of the commercial Pt/C||RuO₂ couple (1.56 V). Moreover, a photovoltaic-electrolysis coupling system can as well be effectively established for robust overall water splitting. Evidently, this ingenious protocol would expand the toolbox for designing efficient 2D nanomaterials for practical applications.

Technical validation of a new microfluidic device for enrichment of CTCs from large volumes of blood by using buffy coats to mimic diagnostic leukapheresis products

Diagnostic leukapheresis (DLA) enables to sample larger blood volumes and increases the detection of circulating tumor cells (CTC) significantly. Nevertheless, the high excess of white blood cells (WBC) of DLA products remains a major challenge for further downstream CTC enrichment and detection. To address this problem, we tested the performance of two label-free CTC technologies for processing DLA products. For the testing purposes, we established ficollized buffy coats (BC) with a WBC composition similar to patient-derived DLA products. The mimicking-DLA samples (with up to 400 × 106 WBCs) were spiked with three different tumor cell lines and processed with two versions of a spiral microfluidic chip for label-free CTC enrichment: the commercially available ClearCell FR1 biochip and a customized DLA biochip based on a similar enrichment principle, but designed for higher throughput of cells. While the samples processed with FR1 chip displayed with increasing cell load significantly higher WBC backgrounds and decreasing cell recovery, the recovery rates of the customized DLA chip were stable, even if challenged with up to 400 × 106 WBCs (corresponding to around 120 mL peripheral blood or 10% of a DLA product). These results indicate that the further up-scalable DLA biochip has potential to process complete DLA products from 2.5 L of peripheral blood in an affordable way to enable high-volume CTC-based liquid biopsies.

Perovskite Core-Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation

While halide perovskite electronics are rapidly developing, they are greatly limited by the inferior charge transport and poor stability. In this work, effective surface charge transfer doping of vapor-liquid-solid (VLS)-grown single-crystalline cesium lead bromide perovskite (CsPbBr₃) nanowires (NWs) via molybdenum trioxide (MoO₃) surface functionalization is achieved. Once fabricated into NW devices, due to the efficient interfacial charge transfer and reduced impurity scattering, a 15× increase in the field-effect hole mobility (μ_h) from 1.5 to 23.3 cm²/(V s) is accomplished after depositing the 10 nm thick MoO₃ shell. This enhanced mobility is already better than any mobility value reported for perovskite field-effect transistors (FETs) to date. The photodetection performance of these CsPbBr₃/MoO₃ core-shell NWs is also investigated to yield a superior responsivity (R) up to 2.36 × 10³ A/W and an external quantum efficiency (EQE) of over 5.48 × 10⁵% toward the 532 nm regime. Importantly, the MoO₃ shell can provide excellent surface passivation to the CsPbBr₃ NW core that minimizes the diffusion of detrimental water and oxygen molecules, improving the air stability of CsPbBr₃/MoO₃ core-shell NW devices. All these findings evidently demonstrate the surface doping as an enabling technology to realize high-mobility and air-stable low-dimensional halide perovskite devices.