X-ray study of ferroic octupole order producing anomalous Hall effect

Recently found anomalous Hall, Nernst, magnetooptical Kerr, and spin Hall effects in the antiferromagnets Mn3X (X = Sn, Ge) are attracting much attention for spintronics and energy harvesting. Since these materials are antiferromagnets, the origin of these functionalities is expected to be different from that of conventional ferromagnets. Here, we report the observation of ferroic order of magnetic octupole in Mn3Sn by X-ray magnetic circular dichroism, which is only predicted theoretically so far. The observed signals are clearly decoupled with the behaviors of uniform magnetization, indicating that the present X-ray magnetic circular dichroism is not arising from the conventional magnetization. We have found that the appearance of this anomalous signal coincides with the time reversal symmetry broken cluster magnetic octupole order. Our study demonstrates that the exotic material functionalities are closely related to the multipole order, which can produce unconventional cross correlation functionalities.

Rashba-Type Dzyaloshinskii-Moriya Interaction, Perpendicular Magnetic Anisotropy, and Skyrmion States at 2D Materials/Co Interfaces

We report a significant Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) at interfaces comprising hexagonal boron nitride (h-BN) and Co. By comparing the behavior of these phenomena at graphene/Co and h-BN/Co interfaces, it is found that the DMI in the latter increases as a function of Co thickness and beyond three monolayers stabilizes with 1 order of magnitude larger values compared to those at graphene/Co, where the DMI shows opposite decreasing behavior. Meanwhile, the PMA for both systems shows similar trends with larger values for graphene/Co and no significant variations for all thickness ranges of Co. Furthermore, using micromagnetic simulations we demonstrate that such significant DMI and PMA values remaining stable over a large range of Co thickness give rise to the formation of skyrmions with small applied external fields. These findings open up further possibilities toward integrating two-dimensional (2D) materials in spin-orbitronics devices.

Magnetization Reversal Process and Magnetostatic Interactions in Fe56Co44/SiO2/Fe3O4 Core/Shell Ferromagnetic Nanowires with Non-Magnetic Interlayer

Nowadays, numerous works regarding nanowires or nanotubes are being published, studying different combinations of materials or geometries with single or multiple layers. However, works, where both nanotube and nanowires are forming complex structures, are scarcer due to the underlying difficulties that their fabrication and characterization entail. Among the specific applications for these nanostructures that can be used in sensing or high-density magnetic data storage devices, there are the fields of photonics or spintronics. To achieve further improvements in these research fields, a complete understanding of the magnetic properties exhibited by these nanostructures is needed, including their magnetization reversal processes and control of the magnetic domain walls. In order to gain a deeper insight into this topic, complex systems are being fabricated by altering their dimensions or composition. In this work, a successful process flow for the additive fabrication of core/shell nanowires arrays is developed. The core/shell nanostructures fabricated here consist of a magnetic nanowire nucleus (Fe₅₆Co₄₄), grown by electrodeposition and coated by a non-magnetic SiO₂ layer coaxially surrounded by a magnetic Fe₃O₄ nanotubular coating both fabricated by means of the Atomic Layer Deposition (ALD) technique. Moreover, the magnetization reversal processes of these coaxial nanostructures and the magnetostatic interactions between the two magnetic components are investigated by means of standard magnetometry and First Order Reversal Curve methodology. From this study, a two-step magnetization reversal of the core/shell bimagnetic nanostructure is inferred, which is also corroborated by the hysteresis loops of individual core/shell nanostructures measured by Kerr effect-based magnetometer.

Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures

Spin-orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high-performance SOT devices, which strongly rely on the spin-orbit coupling (SOC) strength and magnetic properties of ferromagnetic/non-magnetic heterostructures. Recently, van der Waals-layered materials have shown appealing properties for use in efficient SOT applications. On the one hand, transition-metal dichalcogenides, topological insulators, and graphene-based heterostructures possess appreciable SOC strength. This feature can efficiently converse the charge current into spin current and result in large SOT. On the other hand, the newly discovered layered magnetic materials provide ultra-thin and gate-tunable ferromagnetic candidates for high-performance SOT devices. In this review, the latest advancements of SOT research in various layered materials are summarized. First, a brief introduction of SOT is given. Second, SOT studies of various layered materials and heterostructures are summarized. Subsequently, progresses on SOT-induced magnetization switching are presented. Finally, current challenges and prospects for future development are suggested.

Plasmonic Metasurface Resonators to Enhance Terahertz Magnetic Fields for High-Frequency Electron Paramagnetic Resonance

Nanoscale magnetic systems play a decisive role in areas ranging from biology to spintronics. Although, in principle, THz electron paramagnetic resonance (EPR) provides high-resolution access to their properties, lack of sensitivity has precluded realizing this potential. To resolve this issue, the principle of plasmonic enhancement of electromagnetic fields that is used in electric dipole spectroscopies with great success is exploited, and a new type of resonators for the enhancement of THz magnetic fields in a microscopic volume is proposed. A resonator composed of an array of diabolo antennas with a back-reflecting mirror is designed and fabricated. Simulations and THz EPR measurements demonstrate a 30-fold signal increase for thin film samples. This enhancement factor increases to a theoretical value of 7500 for samples confined to the active region of the antennas. These findings open the door to the elucidation of fundamental processes in nanoscale samples, including junctions in spintronic devices or biological membranes.

Spin-Current Modulation in Hexagonal Buckled ZnTe and CdTe Monolayers for Self-Powered Flexible-Piezo-Spintronic Devices

The next-generation spintronic device demands the gated control of spin transport across the semiconducting channel through the replacement of the external gate voltage source by the piezo potential, as experimentally demonstrated in Zhu et al. ACS Nano, 2018, 12 (2), 1811-1820. Consequently, a high level of out-of-plane piezoelectricity together with a large Rashba spin splitting is sought after in semiconducting channel materials. Inspired by this experiment, a new hexagonal buckled two-dimensional (2D) semiconductor, ZnTe, and its iso-electronic partner, CdTe, are proposed herewith. These 2D materials show a strong spin-orbit coupling (SOC), which is evidenced by a large Rashba constant of 1.06 and 1.27 eV·Å, respectively, in ZnTe and CdTe monolayers. Moreover, these Rashba semiconductors exhibit a giant out-of-plane piezoelectric coefficient (d₃₃) = 88.68 and 172.61 pm/V, and can thereby generate a high piezo potential for gating purposes in spin field-effect transistors (spin-FETs). While the low elastic stiffness implies the mechanical flexibility or stretchability in these monolayers. The Rashba constants are found to be effectively modulated via external perturbations, such as strain and electric field. The wide band gap provides ample room for modulation in its electronic properties via external perturbations. Such scope is severely limited in previously reported narrow band gap Rashba semiconductors. The fascinating results found in this work indicate their great potential for applications in next-generation self-powered flexible-piezo-spintronic devices. Moreover, a new class of hexagonal buckled ZnX (X: S, Se, or Te) monolayers is proposed herein based on their previously synthesized bulk counterparts, while their electronic, mechanical, piezoelectric, and thermal properties have been thoroughly investigated using the state-of-art density functional theory (DFT).

Triplon current generation in solids

A triplon refers to a fictitious particle that carries angular momentum S=1 corresponding to the elementary excitation in a broad class of quantum dimerized spin systems. Such systems without magnetic order have long been studied as a testing ground for quantum properties of spins. Although triplons have been found to play a central role in thermal and magnetic properties in dimerized magnets with singlet correlation, a spin angular momentum flow carried by triplons, a triplon current, has not been detected yet. Here we report spin Seebeck effects induced by a triplon current: triplon spin Seebeck effect, using a spin-Peierls system CuGeO3. The result shows that the heating-driven triplon transport induces spin current whose sign is positive, opposite to the spin-wave cases in magnets. The triplon spin Seebeck effect persists far below the spin-Peierls transition temperature, being consistent with a theoretical calculation for triplon spin Seebeck effects.

Applied Trends in Magnetic Rare Earth/Transition Metal Alloys and Multilayers

Ferrimagnetic thin films formerly played a very important role in the development of information storage technology. Now they are again at the forefront of the rising field of spintronics. From new, more efficient magnetic recording media and sensors based on spin valves to the promising technologies envisaged by all-optical switching, ferrimagnets offer singular properties that deserve to be studies both from the point of view of fundamental physics and for applications. In this review, we will focus on ferrimagnetic thin films based on the combination of rare earths (RE) and transition metals (TM).

Structural descriptor for enhanced spin-splitting in 2D hybrid perovskites

Two-dimensional (2D) hybrid metal halide perovskites have emerged as outstanding optoelectronic materials and are potential hosts of Rashba/Dresselhaus spin-splitting for spin-selective transport and spin-orbitronics. However, a quantitative microscopic understanding of what controls the spin-splitting magnitude is generally lacking. Through crystallographic and first-principles studies on a broad array of chiral and achiral 2D perovskites, we demonstrate that a specific bond angle disparity connected with asymmetric tilting distortions of the metal halide octahedra breaks local inversion symmetry and strongly correlates with computed spin-splitting. This distortion metric can serve as a crystallographic descriptor for rapid discovery of potential candidate materials with strong spin-splitting. Our work establishes that, rather than the global space group, local inorganic layer distortions induced via appropriate organic cations provide a key design objective to achieve strong spin-splitting in perovskites. New chiral perovskites reported here couple a sizeable spin-splitting with chiral degrees of freedom and offer a unique paradigm of potential interest for spintronics.

Carrier localization and magnetoresistance in DNA-functionalized carbon nanotubes

Helical functionalization of carbon nanotubes using DNA strands can polarize carrier spins through chirality induced spin selectivity (or CISS) effect. Detection of this effect using transport experiments unravels an underlying magnetoresistance effect, origin of which is not well understood. In the present study, we investigate this effect, a fundamental understanding of which is crucial for the potential use of this system in spintronic devices. The conduction mechanism has been found to be in the strongly localized regime due to DNA functionalization, with the observed magnetoresistance originating from the interference effects between the forward and backward hopping paths. CISS-induced spin polarization has been estimated to increase the carrier localization length by an order of magnitude in the low temperature range and it affects the magnetoresistance effect in a non-trivial way that is not observed in conventional systems.

Origin of Chirality Induced Spin Selectivity in Photoinduced Electron Transfer

Here we propose a mechanism by which spin-polarization can be generated dynamically in chiral molecular systems undergoing photoinduced electron transfer. The proposed mechanism explains how spin-polarization emerges in systems where charge transport is dominated by incoherent hopping, mediated by spin-orbit and electronic exchange couplings through an intermediate charge transfer state. We derive a simple expression for the spin-polarization that predicts a nonmonotonic temperature dependence, consistent with recent experiments, and a maximum spin-polarization that is independent of the magnitude of the spin-orbit coupling. We validate this theory using approximate quantum master equations and the numerically exact hierarchical equations of motion. The proposed mechanism of chirality induced spin selectivity should apply to many chiral systems, and the ideas presented here have implications for the study of spin transport at temperatures relevant to biology and provide simple principles for the molecular control of spins in fluctuating environments.

Tunable Planar Hall Effect in (Ga,Mn)(Bi,As) Epitaxial Layers

We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount of heavy Bi atoms to the prototype dilute ferromagnetic semiconductor (Ga,Mn)As enhances significantly the spin-orbit coupling strength in its valence band, which essentially modifies certain magnetoelectric properties of the material. Our investigations demonstrate that an addition of just 1% Bi atomic fraction, substituting As atoms in the (Ga,Mn)As crystal lattice, causes an increase in the PHE magnitude by a factor of 2.5. Moreover, Bi incorporation into the layers strongly enhances their coercive fields and uniaxial magneto-crystalline anisotropy between the in-plane ⟨110⟩ crystallographic directions in the layers grown under a compressive misfit strain. The displayed two-state behaviour of the PHE resistivity at zero magnetic field, which may be tuned by the control of applied field orientation, could be useful for application in spintronic devices, such as nonvolatile memory elements.

All optical control of magnetization in quantum confined ultrathin magnetic metals

All-optical control dynamics of magnetization in sub-10 nm metallic thin films are investigated, as these films with quantum confinement undergo unique interactions with femtosecond laser pulses. Our theoretical analysis based on the free electron model shows that the density of states at Fermi level (DOS_F) and electron-phonon coupling coefficients (G_ep) in ultrathin metals have very high sensitivity to film thickness within a few angstroms. We show that completely different magnetization dynamics characteristics emerge if DOS_F and G_ep depend on thickness compared with bulk metals. Our model suggests highly efficient energy transfer from femtosecond laser photons to spin waves due to minimal energy absorption by phonons. This sensitivity to the thickness and efficient energy transfer offers an opportunity to obtain ultrafast on-chip magnetization dynamics.

Planar Hall effect in two-layered ferroelectric-ferromagnetic system

We study the appearance of in-plane Hall current in simple quantum mechanical setup-in two-layer system consisting of a ferromagnetic layer of a finite thickness and a semi-infinite ferroelectric barrier which exhibits Rashba and Dresselhaus spin-orbit coupling. We discuss origin of this new Hall effect and its dependence on model parameters.

Nanoscale Noncollinear Spin Textures in Thin Films of a D2d Heusler Compound

Magnetic nano-objects, namely antiskyrmions and Bloch skyrmions, have been found to coexist in single-crystalline lamellae formed from bulk crystals of inverse tetragonal Heusler compounds with D_2d symmetry. Here evidence is shown for magnetic nano-objects in epitaxial thin films of Mn₂ RhSn formed by magnetron sputtering. These nano-objects exhibit a wide range of sizes with stability with respect to magnetic field and temperature that is similar to single-crystalline lamellae. However, the nano-objects do not form well-defined arrays, nor is any evidence found for helical spin textures. This is speculated to likely be a consequence of the poorer homogeneity of chemical ordering in the thin films. However, evidence is found for elliptically distorted nano-objects along perpendicular crystallographic directions within the epitaxial films, which is consistent with elliptical Bloch skyrmions observed in single-crystalline lamellae. Thus, these measurements provide strong evidence for the formation of noncollinear spin textures in thin films of Mn₂ RhSn. Using these films, it is shown that individual nano-objects can be deleted using a local magnetic field from a magnetic tip and collections of nano-objects can be similarly written. These observations suggest a path toward the use of these objects in thin films with D_2d symmetry as magnetic memory elements.

Transcription and logic operations of magnetic skyrmions in bilayer cross structures

Magnetic skyrmions are potential building blocks for future information storage and computing devices. Here, we computationally study the skyrmion dynamics in a cross structure made of two ferromagnetic nanotracks. We show that by controlling the skyrmion motion in the cross structure using spin currents, it is possible to realize the transcription of skyrmion at the intersection of the cross structure at certain conditions. Based on the transcription of skyrmion, we computationally demonstrate the AND, OR and NOT logical gates using the cross structures with modified geometries and appropriate magnetic parameters. Our results may provide guidelines to design future three-dimensional spintronics devices based on magnetic skyrmions.

Ferromagnetism above Room Temperature in a Ni-Doped Organic-Based Magnetic Semiconductor

Ferromagnetic semiconductors with structural flexibility are an indispensable feature for future flexible spin-electronic applications. In this case, we introduce magnetic ingredients into an organic semiconductor, namely, pentacene, to form a ferromagnetic organic semiconductor (FOS). The first observation for ferromagnetic Ni-doped pentacene semiconductors at room temperature in the field of semiconductor spintronics is reported in this article. To date, the mechanism of FOSs with ferromagnetism is not understood yet, especially when their Curie temperature is enhanced above room temperature. Here, we demonstrate dopants of Ni atoms and the modulation of the growth temperature in the FOS films to achieve room-temperature ferromagnetic properties in a series of FOS films, one of which has a maximum coercivity of 257.6 Oe. The spin-exchange interaction between a Ni atom and a pentacene molecule is detected through the magnetic hysteresis obtained using a superconducting quantum interference device magnetometer. We verify the effectiveness of this spin coupling through magnetic force microscopy, Raman spectroscopy, scanning Kelvin probe microscopy, and theoretical simulation. A model for the indirect spin coupling between Ni atoms is proposed for the mechanism of room-temperature ferromagnetic ordering of spins due to the exchange force indirectly. We believe that the π-electrons of pentacene molecules at the triple state for this model can support the spin coupling of electrons of Ni atoms. Our findings facilitate the development of brand-new spintronic devices with structural flexibility and room-temperature ferromagnetism.

Electrochemical Potential-Driven High-Throughput Molecular Electronic and Spintronic Devices: From Molecules to Applications

Molecules are fascinating candidates for constructing tunable and electrically conducting devices by the assembly of either a single molecule or an ensemble of molecules between two electrical contacts followed by current-voltage (I-V) analysis, which is often termed "molecular electronics". Recently, there has been also an upsurge of interest in spin-based electronics or spintronics across the molecules, which offer additional scope to create ultrafast responsive devices with less power consumption and lower heat generation using the intrinsic spin property rather than electronic charge. Researchers have been exploring this idea of utilizing organic molecules, organometallics, coordination complexes, polymers, and biomolecules (proteins, enzymes, oligopeptides, DNA) in integrating molecular electronics and spintronics devices. Although several methods exist to prepare molecular thin-films on suitable electrodes, the electrochemical potential-driven technique has emerged as highly efficient. In this Review we describe recent advances in the electrochemical potential driven growth of nanometric various molecular films on technologically relevant substrates, including non-magnetic and magnetic electrodes to investigate the stimuli-responsive charge and spin transport phenomena.

Preparation Engineering of Two-Dimensional Heterostructures via Bottom-Up Growth for Device Applications

Two-dimensional heterostructures with tremendous electronic and optoelectronic properties hold great promise for nanodevice integrations and applications owing to the wide tunable characteristics. Toward this end, developing construction strategies in allusion to large-scale production of high-quality heterostructures is critical. The mainstream preparation routes are representatively classified into two categories of top-down and bottom-up approaches. Nonetheless, the relatively low reproductivity and the limitation for lateral heterostructure formations of top-down methods at the present stage inherently impeded their further developments. To surmount these obstacles, assembling heterostructures via miscellaneous bottom-up preparation protocols has emerged as a potential solution, attributed to the controllability and clean interface. Three typical approaches of chemical/physical vapor deposition, solution synthesis, and growth under ultrahigh vacuum conditions have shown promise due to the possibilities for preparing heterostructures with predesigned structures, clean interfaces, and the like. Therefore, bottom-up preparation engineering of heterostructures in two dimensions for further device applications is of vital importance. Moreover, heterostructure integrations by these methods have experienced a period of flourishing development in the past few years. In this review, the classical bottom-up growth routes, characterization methods, and latest progress of diverse heterostructures and further device applications are overviewed. Finally, the challenges and opportunities are discussed.

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Understanding and tuning of spinterface for chemisorbed Ni-dinuclear quinonoid on Co(001) substrate

Planar magnetic molecules are of great research interest in the past few years because of their possible application in molecular spintronics. Microscopic understanding of the adsorption and magnetic exchange interaction of these molecules to the metallic/magnetic surfaces may pave the way in developing efficient molecular spin switching devices. Herein, using density functional theory + U calculations, we have studied the structural, electronic, and magnetic properties of a Ni-dinuclear molecule chemically adsorbed on a Co(001) substrate. Switching of the spin and oxidation state of the Ni atom present in the molecule was observed due to the adsorption. We report a strong antiferromagnetic coupling between the spins of the Ni-dinuclear molecule to the ferromagnetic Co(001) substrate. The study reveals an indirect exchange interaction between the magnetic center of the molecule and the substrate Co atoms. The exchange interaction is mediated through the ligands of the molecule that stabilizes the spin moment of the molecule in an antiferromagnetic alignment to the substrate magnetization. Our study also shows that the spin state and strength of MAE of the adsorbed molecule can be tailored through the magneto-chemical method by adding the Cl atom as an axial ligand to the magnetic center of the molecule.

Strain Effects on Rashba Spin-Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high as 20 000 cm² V^-1 s^-1 is given. Both the Shubnikov-de Haas oscillations and integer quantum Hall effect are observed, indicating high sample quality. The Rashba spin-orbit coupling (SOC) is investigated via magneto-transport. Further, a transition from weak localization to weak anti-localization is observed, which shows the tunability of the SOC strength by gating. The magneto-transport data are fitted to the Hikami-Larkin-Nagaoka formula. The phase-coherence and spin-relaxation times, as well as spin-splitting energy and Rashba coefficient of the k-cubic term, are extracted. The analysis reveals that the effects of strain and confinement potential at a high fraction of Sn suppress the Rashba SOC caused by the GeSn/Ge heterostructures.

Observation of domain wall bimerons in chiral magnets

Topological defects embedded in or combined with domain walls have been proposed in various systems, some of which are referred to as domain wall skyrmions or domain wall bimerons. However, the experimental observation of such topological defects remains an ongoing challenge. Here, using Lorentz transmission electron microscopy, we report the experimental discovery of domain wall bimerons in chiral magnet Co-Zn-Mn(110) thin films. By applying a magnetic field, multidomain structures develop, and simultaneously, chained or isolated bimerons arise as the localized state between the domains with the opposite in-plane components of net magnetization. The multidomain formation is attributed to magnetic anisotropy and dipolar interaction, and domain wall bimerons are stabilized by the Dzyaloshinskii-Moriya interaction. In addition, micromagnetic simulations show that domain wall bimerons appear for a wide range of conditions in chiral magnets with cubic magnetic anisotropy. Our results promote further study in various fields of physics.

Entanglement of dark electron-nuclear spin defects in diamond

A promising approach for multi-qubit quantum registers is to use optically addressable spins to control multiple dark electron-spin defects in the environment. While recent experiments have observed signatures of coherent interactions with such dark spins, it is an open challenge to realize the individual control required for quantum information processing. Here, we demonstrate the heralded initialisation, control and entanglement of individual dark spins associated to multiple P1 centers, which are part of a spin bath surrounding a nitrogen-vacancy center in diamond. We realize projective measurements to prepare the multiple degrees of freedom of P1 centers-their Jahn-Teller axis, nuclear spin and charge state-and exploit these to selectively access multiple P1s in the bath. We develop control and single-shot readout of the nuclear and electron spin, and use this to demonstrate an entangled state of two P1 centers. These results provide a proof-of-principle towards using dark electron-nuclear spin defects as qubits for quantum sensing, computation and networks.

Optically Induced Static Magnetization in Metal Halide Perovskite for Spin-Related Optoelectronics

Understanding the feasibility to couple semiconducting and magnetic properties in metal halide perovskites through interface design opens new opportunities for creating the next generation spin-related optoelectronics. In this work, a fundamentally new phenomenon of optically induced magnetization achieved by coupling photoexcited orbital magnetic dipoles with magnetic spins at perovskite/ferromagnetic interface is discovered. The depth-sensitive polarized neutron reflectometry combined with in situ photoexcitation setup, constitutes key evidence of this novel effect. It is demonstrated that a circularly polarized photoexcitation induces a stable magnetization signal within the depth up to 7.5 nm into the surface of high-quality perovskite (MAPbBr3) film underneath a ferromagnetic cobalt layer at room temperature. In contrast, a linearly polarized light does not induce any detectable magnetization in the MAPbBr3. The observation reveals that photoexcited orbital magnetic dipoles at the surface of perovskite are coupled with the spins of the ferromagnetic atoms at the interface, leading to an optically induced magnetization within the perovskite's surface. The finding demonstrates that perovskite semiconductor can be bridged with magnetism through optically controllable method at room temperature in this heterojunction design. This provides the new concept of utilizing spin and orbital degrees of freedom in new-generation spin-related optoelectronic devices.