Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here it is shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

Spin-Orbit Torques and Spin Hall Magnetoresistance Generated by Twin-Free and Amorphous Bi0.9 Sb0.1 Topological Insulator Films

Topological insulators have attracted great interest as generators of spin-orbit torques (SOTs) in spintronic devices. Bi1-x Sbx is a prominent topological insulator that has a high charge-to-spin conversion efficiency. However, the origin and magnitude of the SOTs induced by current-injection in Bi1-x Sbx remain controversial. Here, the investigation of the SOTs and spin Hall magnetoresistance resulting from charge-to-spin conversion in twin-free epitaxial layers of Bi0.9 Sb0.1 (0001) coupled to FeCo are investigated, and compared with those of amorphous Bi0.9 Sb0.1 . A large charge-to-spin conversion efficiency of 1 in the first case and less than 0.1 in the second is found, confirming crystalline Bi0.9 Sb0.1 as a strong spin-injector material. The SOTs and spin Hall magnetoresistance are independent of the direction of the electric current, indicating that charge-to-spin conversion in single-crystal Bi0.9 Sb0.1 (0001) is isotropic despite the strong anisotropy of the topological surface states. Further, it is found that the damping-like SOT has a non-monotonic temperature dependence with a minimum at 20 K. By correlating the SOT with resistivity and weak antilocalization measurements, charge-spin conversion is concluded to occur via thermally excited holes from the bulk states above 20 K, and conduction through the isotropic surface states with increasing spin polarization due to decreasing electron-electron scattering below 20 K.

All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest. However, the all-electrical control of such systems at room temperature, a crucial step toward practical application, has not been reported. Here, using a small writing current density of around 5 × 10⁶ A·cm^-2, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn₃Sn, with a strong readout signal at room temperature in the Si/SiO₂/Mn₃Sn/AlO_x structure, and without external magnetic field or injected spin current. Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn₃Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures

Spin-orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high-performance SOT devices, which strongly rely on the spin-orbit coupling (SOC) strength and magnetic properties of ferromagnetic/non-magnetic heterostructures. Recently, van der Waals-layered materials have shown appealing properties for use in efficient SOT applications. On the one hand, transition-metal dichalcogenides, topological insulators, and graphene-based heterostructures possess appreciable SOC strength. This feature can efficiently converse the charge current into spin current and result in large SOT. On the other hand, the newly discovered layered magnetic materials provide ultra-thin and gate-tunable ferromagnetic candidates for high-performance SOT devices. In this review, the latest advancements of SOT research in various layered materials are summarized. First, a brief introduction of SOT is given. Second, SOT studies of various layered materials and heterostructures are summarized. Subsequently, progresses on SOT-induced magnetization switching are presented. Finally, current challenges and prospects for future development are suggested.

Spin-Orbit Torque-Induced Domain Nucleation for Neuromorphic Computing

Neuromorphic computing has become an increasingly popular approach for artificial intelligence because it can perform cognitive tasks more efficiently than conventional computers. However, it remains challenging to develop dedicated hardware for artificial neural networks. Here, a simple bilayer spintronic device for hardware implementation of neuromorphic computing is demonstrated. In L1₁ -CuPt/CoPt bilayer, current-inducted field-free magnetization switching by symmetry-dependent spin-orbit torques shows a unique domain nucleation-dominated magnetization reversal, which is not accessible in conventional bilayers. Gradual domain nucleation creates multiple intermediate magnetization states which form the basis of a sigmoidal neuron. Using the L1₁ -CuPt/CoPt bilayer as a sigmoidal neuron, the training of a deep learning network to recognize written digits, with a high recognition rate (87.5%) comparable to simulation (87.8%) is further demonstrated. This work offers a new scheme of implementing artificial neural networks by magnetic domain nucleation.

Generation and manipulation of current-induced spin-orbit torques

An emerging field of spintronics, spin-orbitronics, aims to discover novel phenomena and functionalities originating from spin-orbit coupling in solid-state devices. The development of spin-orbitronics promises a fundamental understanding of spin physics in condensed matter, as well as smaller, faster, and far-more energy-efficient spin-based devices. Of particular importance in this field is current-induced spin-orbit torques, which trigger magnetic dynamics by the transfer of angular momentum from an atomic lattice to local magnetization through the spin-orbit coupling. The spin-orbit torque has attracted extensive attention for its fascinating relativistic and quantum mechanical nature, as well as prospective nanoelectronic applications. In this article, we review our studies on the generation and manipulation of current-induced spin-orbit torques.

Current-Induced Spin-Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin-orbit torque (SOT), which originates from the spin-orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT-based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field-free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out-of-plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.

Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer

Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L1₀ phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L1₀ FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin-orbit coupling. The symmetry breaking that generates spin torque within L1₀ FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L1₀ FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.

Efficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr2 Ge2 Te6

Being able to electrically manipulate the magnetic properties in recently discovered van der Waals ferromagnets is essential for their integration in future spintronics devices. Here, the magnetization of a semiconducting 2D ferromagnet, i.e., Cr₂ Ge₂ Te₆ , is studied using the anomalous Hall effect in Cr₂ Ge₂ Te₆ /tantalum heterostructures. The thinner the flakes, hysteresis and remanence in the magnetization loop with out-of-plane magnetic fields become more prominent. In order to manipulate the magnetization in such thin flakes, a combination of an in-plane magnetic field and a charge current flowing through Ta-a heavy metal exhibiting giant spin Hall effect-is used. In the presence of in-plane fields of 20 mT, charge current densities as low as 5 × 10⁵ A cm^-2 are sufficient to switch the out-of-plane magnetization of Cr₂ Ge₂ Te₆ . This finding highlights that current densities required for spin-orbit torque switching of Cr₂ Ge₂ Te₆ are about two orders of magnitude lower than those required for switching nonlayered metallic ferromagnets such as CoFeB. The results presented here show the potential of 2D ferromagnets for low-power memory and logic applications.

Field-Free Programmable Spin Logics via Chirality-Reversible Spin-Orbit Torque Switching

Spin-orbit torque (SOT)-induced magnetization switching exhibits chirality (clockwise or counterclockwise), which offers the prospect of programmable spin-logic devices integrating nonvolatile spintronic memory cells with logic functions. Chirality is usually fixed by an applied or effective magnetic field in reported studies. Herein, utilizing an in-plane magnetic layer that is also switchable by SOT, the chirality of a perpendicular magnetic layer that is exchange-coupled with the in-plane layer can be reversed in a purely electrical way. In a single Hall bar device designed from this multilayer structure, three logic gates including AND, NAND, and NOT are reconfigured, which opens a gateway toward practical programmable spin-logic devices.

Excitation and Amplification of Spin Waves by Spin-Orbit Torque

The emerging field of nanomagnonics utilizes high-frequency waves of magnetization-spin waves-for the transmission and processing of information on the nanoscale. The advent of spin-transfer torque has spurred significant advances in nanomagnonics, by enabling highly efficient local spin wave generation in magnonic nanodevices. Furthermore, the recent emergence of spin-orbitronics, which utilizes spin-orbit interaction as the source of spin torque, has provided a unique ability to exert spin torque over spatially extended areas of magnonic structures, enabling enhanced spin wave transmission. Here, it is experimentally demonstrated that these advances can be efficiently combined. The same spin-orbit torque mechanism is utilized for the generation of propagating spin waves, and for the long-range enhancement of their propagation, in a single integrated nanomagnonic device. The demonstrated system exhibits a controllable directional asymmetry of spin wave emission, which is highly beneficial for applications in nonreciprocal magnonic logic and neuromorphic computing.