Simultaneous and synergistic effect of heavy metal adsorption on the enhanced photocatalytic performance of a visible-light-driven RS-TONR/TNT composite

A hydrothermally synthesized rhodium/antimony co-doped TiO₂ nanorod and titanate nanotube (RS-TONR/TNT) composite was prepared for removal of heavy metals and organic pollutants from water under visible light irradiation. The composite provides the dual function of simultaneous adsorption of heavy metal ions and enhanced degradation of dissolved organic compounds. Acid treatment transformed titanate nanotubes to irregular tubular structures distributed homogeneously over untransformed RS/TONRs. Synergistic removal and degradation was studied with various heavy metals, Orange (II) dye, and Bisphenol A. The adsorption capacity of the composite for heavy metal ions was Pb(II) > Cd(II) > Cu(II) > Zn(II). The adsorbed metals enhanced photocatalytic degradation of the organic pollutants, but Cu was most effective, with degradation exceeding 70% for the dye and 80% for Bisphenol A after 5 h of treatment. Photocatalytic activity was enhanced more by adsorption than photodeposition of Cu ions. A decrease in XRD rutile peak intensity with adsorbed metal indicates a change in crystallinity which may enhance photocatalytic activity. Thick and bulging nanostructures in FE-SEM images signify ion adsorption within titanate pores. BET analysis indicated titanate nanotubes with adsorbed metal are mesoporous but their tubular structure persists. XPS showed more active Cu 2p_3/2 states under light, supporting an active role of Cu⁺ in photocatalytic ROS generation. Detection of ROS and Cu species using methanol, EDTA, pCBA, and benzoic acid probes provided strong evidence for degradation via a charge transfer mechanism. Findings demonstrate the potential of the RS-TONR/TNT composite for simultaneous removal of heavy metals and degradation of organic pollutants.

Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability

Two-dimensional transition-metal dichalcogenide (2D TMD) layers are highly attractive for emerging stretchable and foldable electronics owing to their extremely small thickness coupled with extraordinary electrical and optical properties. Although intrinsically large strain limits are projected in them (i.e., several times greater than silicon), integrating 2D TMDs in their pristine forms does not realize superior mechanical tolerance greatly demanded in high-end stretchable and foldable devices of unconventional form factors. In this article, we report a versatile and rational strategy to convert 2D TMDs of limited mechanical tolerance to tailored 3D structures with extremely large mechanical stretchability accompanying well-preserved electrical integrity and modulated transport properties. We employed a concept of strain engineering inspired by an ancient paper-cutting art, known as kirigami patterning, and developed 2D TMD-based kirigami electrical conductors. Specifically, we directly integrated 2D platinum diselenide (2D PtSe₂) layers of controlled carrier transport characteristics on mechanically flexible polyimide (PI) substrates by taking advantage of their low synthesis temperature. The metallic 2D PtSe₂/PI kirigami patterns of optimized dimensions exhibit an extremely large stretchability of ∼2000% without compromising their intrinsic electrical conductance. They also present strain-tunable and reversible photoresponsiveness when interfaced with semiconducting carbon nanotubes (CNTs), benefiting from the formation of 2D PtSe₂/CNT Schottky junctions. Moreover, kirigami field-effect transistors (FETs) employing semiconducting 2D PtSe₂ layers exhibit tunable gate responses coupled with mechanical stretching upon electrolyte gating. The exclusive role of the kirigami pattern parameters in the resulting mechanoelectrical responses was also verified by a finite-element modeling (FEM) simulation. These multifunctional 2D materials in unconventional yet tailored 3D forms are believed to offer vast opportunities for emerging electronics and optoelectronics.

Experimental Realization of Few Layer Two-Dimensional MoS2 Membranes of Near Atomic Thickness for High Efficiency Water Desalination

A globally imminent shortage of freshwater has been demanding viable strategies for improving desalination efficiencies with the adoption of cost- and energy-efficient membrane materials. The recently explored 2D transition metal dichalcogenides (2D TMDs) of near atomic thickness have been envisioned to offer notable advantages as high-efficiency membranes owing to their structural uniqueness; that is, extremely small thickness and intrinsic atomic porosity. Despite theoretically projected advantages, experimental realization of near atom-thickness 2D TMD-based membranes and their desalination efficiency assessments have remained largely unexplored mainly due to the technical difficulty associated with their seamless large-scale integration. Herein, we report the experimental demonstration of high-efficiency water desalination membranes based on few-layer 2D molybdenum disulfide (MoS₂) of only ∼7 nm thickness. Chemical vapor deposition (CVD)-grown centimeter-scale 2D MoS₂ layers were integrated onto porous polymeric supports with well-preserved structural integrity enabled by a water-assisted 2D layer transfer method. These 2D MoS₂ membranes of near atomic thickness exhibit an excellent combination of high water permeability (>322 L m^-2 h^-1 bar^-1) and high ionic sieving capability (>99%) for various seawater salts including Na⁺, K⁺, Ca²⁺, and Mg²⁺ with a range of concentrations. Moreover, they present near 100% salt ion rejection rates for actual seawater obtained from the Atlantic coast, significantly outperforming the previously developed 2D MoS₂ layer membranes of micrometer thickness as well as conventional reverse osmosis (RO) membranes. Underlying principles behind such remarkably excellent desalination performances are attributed to the intrinsic atomic vacancies inherent to the CVD-grown 2D MoS₂ layers as verified by aberration-corrected electron microscopy characterization.

Two-Dimensional/Three-Dimensional Schottky Junction Photovoltaic Devices Realized by the Direct CVD Growth of vdW 2D PtSe2 Layers on Silicon

Two-dimensional (2D) platinum diselenide (PtSe₂) layers are a new class of near-atom-thick 2D crystals in a van der Waals-assembled structure similar to previously explored many other 2D transition-metal dichalcogenides (2D TMDs). They exhibit distinct advantages over conventional 2D TMDs for electronics and optoelectronics applications such as metallic-to-semiconducting transition, decently high carrier mobility, and low growth temperature. Despite such superiority, much of their electrical properties have remained mostly unexplored, leaving their full technological potential far from being realized. Herein, we report 2D/three-dimensional Schottky junction devices based on vertically aligned metallic 2D PtSe₂ layers integrated on Si wafers. We directly grew 2D PtSe₂ layers of controlled orientation and carrier transport characteristics via a low-temperature chemical vapor deposition process and investigated 2D PtSe₂/Si Schottky junction properties. We unveiled a comprehensive set of material parameters, which decisively confirm the presence of excellent Schottky junctions, i.e., high-current rectification, small ideality factor, and temperature-dependent variation of Schottky barrier heights. Moreover, we observed strong photovoltaic effects in the 2D PtSe₂/Si Schottky junction devices and extended them to realize flexible photovoltaic devices. This study is believed to significantly broaden the versatility of 2D PtSe₂ layers in practical and futuristic electronic devices.

Surface-diffusion-limited growth of atomically thin WS2 crystals from core-shell nuclei

Atomically thin transition metal dichalcogenides (TMDs) have recently attracted great attention since the unique and fascinating physical properties have been found in various TMDs, implying potential applications in next-generation devices. The progress towards developing new functional and high-performance devices based on TMDs, however, is limited by the difficulty in producing large-area monolayer TMDs due to a lack of knowledge of the growth processes of monolayer TMDs. In this work, we have investigated the growth processes of monolayer WS2 crystals using a thermal chemical vapor deposition method, in which the growth conditions were adjusted in a systematic manner. It was found that, after forming WO3-WS2 core-shell nanoparticles as nucleation sites on a substrate, the growth of three-dimensional WS2 islands proceeds by ripening and crystallization processes. Lateral growth of monolayer WS2 crystals subsequently occurs by the surface diffusion process of adatoms toward the step edge of the three-dimensional WS2 islands. Our results provide understanding of the growth processes of monolayer WS2 by using chemical vapor deposition methods.

Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature Chemical Vapor Deposition-Grown PtSe2 and Its Influences on Electrical Properties and Device Applications

Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX₂ (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X elements. 2D platinum diselenide (2D PtSe₂) is a relatively unexplored class of 2D TMDs with noble-metal Pt as M, offering distinct advantages over conventional 2D TMDs such as higher carrier mobility and lower growth temperatures. Despite the projected promise, much of its fundamental structural and electrical properties and their interrelation have not been clarified, and so its full technological potential remains mostly unexplored. In this work, we investigate the structural evolution of large-area chemical vapor deposition (CVD)-grown 2D PtSe₂ layers of tailored morphology and clarify its influence on resulting electrical properties. Specifically, we unveil the coupled transition of structural-electrical properties in 2D PtSe₂ layers grown at a low temperature (i.e., 400 °C). The layer orientation of 2D PtSe₂ grown by the CVD selenization of seed Pt films exhibits horizontal-to-vertical transition with increasing Pt thickness. While vertically aligned 2D PtSe₂ layers present metallic transports, field-effect-transistor gate responses were observed with thin horizontally aligned 2D PtSe₂ layers prepared with Pt of small thickness. Density functional theory calculation identifies the electronic structures of 2D PtSe₂ layers undergoing the transition of horizontal-to-vertical layer orientation, further confirming the presence of this uniquely coupled structural-electrical transition. The advantage of low-temperature growth was further demonstrated by directly growing 2D PtSe₂ layers of controlled orientation on polyimide polymeric substrates and fabricating their Kirigami structures, further strengthening the application potential of this material. Discussions on the growth mechanism behind the horizontal-to-vertical 2D layer transition are also presented.

Intraoperative Management to Prevent Cardiac Collapse in a Patient With a Recurrent, Large-volume Pericardial Effusion and Paroxysmal Atrial Fibrillation During Liver Transplantation: A Case Report

BACKGROUND

Pericardial effusion is a common feature of end-stage liver disease. In this case report we describe the intraoperative management of recurrent pericardial effusion, without re-pericardiocentesis, to prevent circulatory collapse during a critical surgical time-point; that is, during manipulation of the major vessels and graft reperfusion.

METHODS

A 47-year-old woman with hepatitis B was scheduled to undergo deceased donor liver transplantation (LT). A large pericardial effusion was preoperatively identified using transthoracic echocardiography (TTE). The patient also had paroxysmal atrial fibrillation. Two days before surgery, preemptive pericardiocentesis was performed and the 1150-mL effusion was drained. Intraoperatively, recurrence of the large pericardial effusion was identified using transesophageal echocardiography (TEE). During inferior vena cava manipulation, the surgeon consulted the anesthesiologist to evaluate the hemodynamic changes in the patient. After 3 attempts, the transplant team was able to determine the most appropriate anastomosis site, defined as that with the least impact on cardiac function. To prevent the development of severe postreperfusion syndrome, 10% MgSO₄ (2 g) was gradually infused 20 minutes before portal vein declamping, and immediately before graft reperfusion a 100-μg bolus of epinephrine was administered.

RESULTS

During graft reperfusion, there was no evidence of heart chamber collapse or flow disturbance, as seen on the TEE findings. Postoperatively, the patient recovered completely and was discharged from the hospital. Six months after surgery, there was no sign of pericardial effusion on follow-up TTE.

CONCLUSION

Our intraoperative strategy may prevent cardiac collapse in patients with pericardial effusion detected during LT. Intraoperative TEE plays an important role in guiding hemodynamic management.

Centimeter-scale Green Integration of Layer-by-Layer 2D TMD vdW Heterostructures on Arbitrary Substrates by Water-Assisted Layer Transfer

Two-dimensional (2D) transition metal dichalcogenide (2D TMD) layers present an unusually ideal combination of excellent opto-electrical properties and mechanical tolerance projecting high promise for a wide range of emerging applications, particularly in flexible and stretchable devices. The prerequisite for realizing such opportunities is to reliably integrate large-area 2D TMDs of well-defined dimensions on mechanically pliable materials with targeted functionalities by transferring them from rigid growth substrates. Conventional approaches to overcome this challenge have been limited as they often suffer from the non-scalable integration of 2D TMDs whose structural and chemical integrity are altered through toxic chemicals-involved processes. Herein, we report a generic and reliable strategy to achieve the layer-by-layer integration of large-area 2D TMDs and their heterostructure variations onto a variety of unconventional substrates. This new 2D layer integration method employs water only without involving any other chemicals, thus renders distinguishable advantages over conventional approaches in terms of material property preservation and integration size scalability. We have demonstrated the generality of this method by integrating a variety of 2D TMDs and their heterogeneously-assembled vertical layers on exotic substrates such as plastics and papers. Moreover, we have verified its technological versatility by demonstrating centimeter-scale 2D TMDs-based flexible photodetectors and pressure sensors which are difficult to fabricate with conventional approaches. Fundamental principles for the water-assisted spontaneous separation of 2D TMD layers are also discussed.

Artificial Neuron using Vertical MoS2/Graphene Threshold Switching Memristors

With the ever-increasing demand for low power electronics, neuromorphic computing has garnered huge interest in recent times. Implementing neuromorphic computing in hardware will be a severe boost for applications involving complex processes such as image processing and pattern recognition. Artificial neurons form a critical part in neuromorphic circuits, and have been realized with complex complementary metal-oxide-semiconductor (CMOS) circuitry in the past. Recently, metal-insulator-transition materials have been used to realize artificial neurons. Although memristors have been implemented to realize synaptic behavior, not much work has been reported regarding the neuronal response achieved with these devices. In this work, we use the volatile threshold switching behavior of a vertical-MoS2/graphene van der Waals heterojunction system to produce the integrate-and-fire response of a neuron. We use large area chemical vapor deposited (CVD) graphene and MoS2, enabling large scale realization of these devices. These devices can emulate the most vital properties of a neuron, including the all or nothing spiking, the threshold driven spiking of the action potential, the post-firing refractory period of a neuron and strength modulated frequency response. These results show that the developed artificial neuron can play a crucial role in neuromorphic computing.

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation

Chemical vapor deposition (CVD) is a powerful method employed for high-quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for CVD-based growth of monolayer molybdenum disulfide (MoS₂) by using thermally evaporated thin films of molybdenum trioxide (MoO₃) as the molybdenum (Mo) source for coevaporation. Uniform evaporation rate of MoO₃ thin films provides uniform Mo vapors which promote highly reproducible single-crystal growth of MoS₂ throughout the substrate. These high-quality crystals are as large as 95 μm and are characterized by scanning electron microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. The bottom-gated field-effect transistors fabricated using the as-grown single crystals show n-type transistor behavior with a good on/off ratio of 10⁶ under ambient conditions. Our results presented here address the precursor vapor control during the CVD process and is a major step forward toward reproducible growth of MoS₂ for future semiconductor device applications.

Nitrogen-Mediated Growth of Silver Nanocrystals to Form UltraThin, High-Purity Silver-Film Electrodes with Broad band Transparency for Solar Cells

Controlling the shape and crystallography of nanocrystals during the early growth stages of a noble metal layer is important because of its correlation with the final layer morphology and optoelectrical features, but this task is unattainable in vapor deposition processes dominated by artificially uncontrollable thermodynamic free energies. We report on experimental evidence for the controllable evolution of Ag nanocrystals as induced by the addition of nitrogen, presumed to be nonresidual in the Ag lattice given its strong float-out behavior. This atypical formation of energetically stable Ag nanocrystals with significantly improved wetting abilities on a chemically heterogeneous substrate promotes the development of an atomically flat, ultrathin, high-purity Ag layer with a thickness of only 5 nm. This facilitates the fabrication of Ag thin-film electrodes exhibiting highly enhanced optical transparency over a broad spectral range in the visible and near-infrared spectral range. An Ag thin-film electrode with a ZnO/Ag/ZnO configuration exhibits an average transmittance of about 95% in the spectral range of 400-800 nm with a maximum transmittance of over 98% at 580 nm, which is comparable with the best transparency values so far reported for transparent electrodes. This degree of optical transparency provides an excellent chance to improve the photon absorption of photovoltaic devices employing an Ag thin film as their window electrode. This is clearly confirmed by the superior performance of a flexible organic solar cell with a power conversion efficiency of 8.0%, which is far superior to that of the same solar cell using a conventional amorphous indium tin oxide electrode (6.4%).

Three dimensionally-ordered 2D MoS2 vertical layers integrated on flexible substrates with stretch-tunable functionality and improved sensing capability

The intrinsically anisotropic crystallinity of two-dimensional (2D) transition metal dichalcogenide (2D TMD) layers enables a variety of intriguing material properties which strongly depend on the physical orientation of constituent 2D layers. For instance, 2D TMDs with vertically-aligned layers exhibit numerous dangling bonds on their 2D layer edge sites predominantly exposed on the surface, projecting significantly improved physical and/or chemical adsorption capability compared to their horizontally-oriented 2D layer counterparts. Such property advantages can be further promoted as far as the material can be integrated onto unconventional substrates of tailored geometry/functionality, offering vast opportunities for a wide range of applications which demand enhanced surface area/reactivity and mechanical flexibility. Herein, we report a new form of 2D TMDs, i.e., three-dimensionally ordered 2D molybdenum disulfide (2D MoS2) with vertically-aligned layers integrated on elastomeric substrates and explore their tunable multi-functionalities and technological promise. We grew large-scale (>2 cm2) vertically-aligned 2D MoS2 layers using a three-dimensionally patterned silicon dioxide (SiO2) template and directly transferred/integrated them onto flexible polydimethylsiloxane (PDMS) substrates by taking advantage of the distinguishable water-wettability of 2D MoS2vs. SiO2. The excellent structural integrity of the integrated vertical 2D MoS2 layers was confirmed by extensive spectroscopy/microscopy characterization. In addition, the stretch-driven unique tunability of their optical and surface properties was also examined. Moreover, we applied this material for flexible humidity sensing and identified significantly improved (>10 times) sensitivity over conventionally-designed horizontal 2D MoS2 layers, further confirming their high potential for unconventional flexible technologies.

Centimeter-Scale Periodically Corrugated Few-Layer 2D MoS2 with Tensile Stretch-Driven Tunable Multifunctionalities

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers exhibit superior optical, electrical, and structural properties unattainable in any traditional materials. Many of these properties are known to be controllable via external mechanical inputs, benefiting from their extremely small thickness coupled with large in-plane strain limits. However, realization of such mechanically driven tunability often demands highly complicated engineering of 2D TMD layer structures, which is difficult to achieve on a large wafer scale in a controlled manner. Herein, we explore centimeter-scale periodically corrugated 2D TMDs, particularly 2D molybdenum disulfide (MoS₂), and report their mechanically tunable multifunctionalities. We developed a water-assisted process to homogeneously integrate few layers of 2D MoS₂ on three-dimensionally corrugated elastomeric substrates on a large area (>2 cm²). The evolution of electrical, optical, and structural properties in these three-dimensionally corrugated 2D MoS₂ layers was systematically studied under controlled tensile stretch. We identified that they present excellent electrical conductivity and photoresponsiveness as well as systematically tunable surface wettability and optical absorbance even under significant mechanical deformation. These novel three-dimensionally structured 2D materials are believed to offer exciting opportunities for large-scale, mechanically deformable devices of various form factors and unprecedented multifunctionalities.

Optical Transmittance Enhancement of Flexible Copper Film Electrodes with a Wetting Layer for Organic Solar Cells

The development of highly efficient flexible transparent electrodes (FTEs) supported on polymer substrates is of great importance to the realization of portable and bendable photovoltaic devices. Highly conductive, low-cost Cu has attracted attention as a promising alternative for replacing expensive indium tin oxide (ITO) and Ag. However, highly efficient, Cu-based FTEs are currently unavailable because of the absence of an efficient means of attaining an atomically thin, completely continuous Cu film that simultaneously exhibits enhanced optical transmittance and electrical conductivity. Here, strong two-dimensional (2D) epitaxy of Cu on ZnO is reported by applying an atomically thin (around 1 nm) oxygen-doped Cu wetting layer. Analyses of transmission electron microscopy images and X-ray diffraction patterns, combined with first-principles density functional theory calculations, reveal that the reduction in the surface and interface free energies of the wetting layers with a trace amount (1-2 atom %) of oxygen are largely responsible for the two-dimensional epitaxial growth of the Cu on ZnO. The ultrathin 2D Cu layer, embedded between ZnO films, exhibits a highly desirable optical transmittance of over 85% in a wavelength range of 400-800 nm and a sheet resistance of 11 Ω sq^-1. The validity of this innovative approach is verified with a Cu-based FTE that contributes to the light-to-electron conversion efficiency of a flexible organic solar cell that incorporates the transparent electrode (7.7%), which far surpasses that of a solar cell with conventional ITO (6.4%).

Noble metal-coated MoS2 nanofilms with vertically-aligned 2D layers for visible light-driven photocatalytic degradation of emerging water contaminants

Two-dimensional molybdenum disulfide (2D MoS2) presents extraordinary optical, electrical, and chemical properties which are highly tunable by engineering the orientation of constituent 2D layers. 2D MoS2 films with vertically-aligned layers exhibit numerous 2D edge sites which are predicted to offer superior chemical reactivity owing to their enriched dangling bonds. This enhanced chemical reactivity coupled with their tunable band gap energy can render the vertical 2D MoS2 unique opportunities for environmental applications that go beyond the conventional applications of horizontal 2D MoS2 in electronics/opto-electronics. Herein, we report that MoS2 films with vertically-aligned 2D layers exhibit excellent visible light responsive photocatalytic activities for efficiently degrading organic compounds in contaminated water such as harmful algal blooms. We demonstrate the visible light-driven rapid degradation of microcystin-LR, one of the most toxic compounds produced by the algal blooms, and reveal that the degradation efficiency can be significantly improved by incorporating noble metals. This study suggests a high promise of these emerging 2D materials for water treatment, significantly broadening their versatility for a wide range of energy and environmental applications.

Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum or tungsten disulfides (MoS₂ or WS₂) exhibit extremely large in-plane strain limits and unusual optical/electrical properties, offering unprecedented opportunities for flexible electronics/optoelectronics in new form factors. In order for them to be technologically viable building-blocks for such emerging technologies, it is critically demanded to grow/integrate them onto flexible or arbitrary-shaped substrates on a large wafer-scale compatible with the prevailing microelectronics processes. However, conventional approaches to assemble them on such unconventional substrates via mechanical exfoliations or coevaporation chemical growths have been limited to small-area transfers of 2D TMD layers with uncontrolled spatial homogeneity. Moreover, additional processes involving a prolonged exposure to strong chemical etchants have been required for the separation of as-grown 2D layers, which is detrimental to their material properties. Herein, we report a viable strategy to universally combine the centimeter-scale growth of various 2D TMD layers and their direct assemblies on mechanically deformable substrates. By exploring the water-assisted debonding of gold (Au) interfaced with silicon dioxide (SiO₂), we demonstrate the direct growth, transfer, and integration of 2D TMD layers and heterostructures such as 2D MoS₂ and 2D MoS₂/WS₂ vertical stacks on centimeter-scale plastic and metal foil substrates. We identify the dual function of the Au layer as a growth substrate as well as a sacrificial layer which facilitates 2D layer transfer. Furthermore, we demonstrate the versatility of this integration approach by fabricating centimeter-scale 2D MoS₂/single walled carbon nanotube (SWNT) vertical heterojunctions which exhibit current rectification and photoresponse. This study opens a pathway to explore large-scale 2D TMD van der Waals layers as device building blocks for emerging mechanically deformable electronics/optoelectronics.

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

Transition metal dichalcogenides (TMDCs) are promising next-generation materials for optoelectronic devices because, at subnanometer thicknesses, they have a transparency, flexibility, and band gap in the near-infrared to visible light range. In this study, we examined continuous, large-area MoSe₂ film, grown by molecular beam epitaxy on an amorphous SiO₂/Si substrate, which facilitated direct device fabrication without exfoliation. Spectroscopic measurements were implemented to verify the formation of a homogeneous MoSe₂ film by performing mapping on the micrometer scale and measurements at multiple positions. The crystalline structure of the film showed hexagonal (2H) rotationally stacked layers. The local strain at the grain boundaries was mapped using a geometric phase analysis, which showed a higher strain for a 30° twist angle compared to a 13° angle. Furthermore, the photon-matter interaction for the rotational stacking structures was investigated as a function of the number of layers using spectroscopic ellipsometry. The optical band gap for the grown MoSe₂ was in the near-infrared range, 1.24-1.39 eV. As the film thickness increased, the band gap energy decreased. The atomically controlled thin MoSe₂ showed promise for application to nanoelectronics, photodetectors, light emitting diodes, and valleytronics.

Thermodynamically Stable Synthesis of Large-Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n-n Heterojunction Devices

Transition metal dichalcogenide (TMDC) monolayers are considered to be potential materials for atomically thin electronics due to their unique electronic and optical properties. However, large-area and uniform growth of TMDC monolayers with large grain sizes is still a considerable challenge. This report presents a simple but effective approach for large-scale and highly crystalline molybdenum disulfide monolayers using a solution-processed precursor deposition. The low supersaturation level, triggered by the evaporation of an extremely thin precursor layer, reduces the nucleation density dramatically under a thermodynamically stable environment, yielding uniform and clean monolayer films and large crystal sizes up to 500 µm. As a result, the photoluminescence exhibits only a small full-width-half-maximum of 48 meV, comparable to that of exfoliated and suspended monolayer crystals. It is confirmed that this growth procedure can be extended to the synthesis of other TMDC monolayers, and robust MoS₂ /WS₂ heterojunction devices are easily prepared using this synthetic procedure due to the large-sized crystals. The heterojunction device shows a fast response time (≈45 ms) and a significantly high photoresponsivity (≈40 AW^-1 ) because of the built-in potential and the majority-carrier transport at the n-n junction. These findings indicate an efficient pathway for the fabrication of high-performance 2D optoelectronic devices.

Boosting Photocatalytic Performance of Inactive Rutile TiO2 Nanorods under Solar Light Irradiation: Synergistic Effect of Acid Treatment and Metal Oxide Co-catalysts

In the present work, we accomplish the boosting of photocatalytic performance by the synergistic effect of acid treatment and transition metal oxide co-catalysts on molten salt rutile TiO₂ nanorods. FT-IR and XPS (oxygen deconvolution) results confirmed that the amount of hydroxyl groups increased on the surface of rutile TiO₂ nanorods (TO-NRs) after acid treatment. HR-TEM analysis revealed fine dispersion of metal oxide on the surface of acid treated TiO₂ nanorods (ATO-NRs). The photocatalytic activities of as-prepared (TO-NRs), acid treated (ATO-NRs), metal oxide loaded (MTO-NRs), and both acid treated and metal oxide loaded (MATO-NRs) nanorods were compared based on the rate kinetics and dye degradation efficiencies. Cobalt oxide (1 wt %) loaded and 1.0 M acid treated TiO₂ nanorods (Co/ATO-NR) exhibited the higher photocatalytic degradation efficiency for Orange-II dye degradation and inactivation of S. typhimurium pathogen compared to other photocatalysts under solar irradiation. Photoelectrochemical analysis demonstrated that the charge transfer process in Co/ATO-NR is significantly higher than that in the untreated samples. The improved photocatalytic activity of inactive TO-NRs might be due to enhanced charge transfer of finely dispersed metal oxides on the OH-rich surface of acid treated TiO₂ nanorods.

CdS/Zr:Fe2 O3 Nanorod Arrays with Al2 O3 Passivation Layer for Photoelectrochemical Solar Hydrogen Generation

CdS-sensitized 1 D Zr:Fe₂ O₃ nanorod arrays were synthesized on fluorine-doped tin oxide substrates by a two-step hydrothermal method. The photoelectrochemical results demonstrate that the current density (4.2 mA cm^-2 at 0 V vs. Ag/AgCl) recorded under illumination for the CdS/1 D Zr:Fe₂ O₃ photoanodes is 2.8 time higher than the bare 1 D Zr:Fe₂ O₃ . The extended absorbance spectrum, the reduced recombination, and the effective transport of photogenerated holes in CdS to the electrolyte facilitate enhancement in the photoelectrochemical performance. From X-ray photoelectron spectroscopy and TEM observations of the bare and aluminum oxide-treated CdS/1 D Zr:Fe₂ O₃ photoanodes, we could confirm that the 1 D Zr:Fe₂ O₃ nanorods were covered by the CdS layer and Al₂ O₃ layer present on surface of CdS. Furthermore, the photocurrent and stability of the CdS/1 D Zr:Fe₂ O₃ nanorods was significantly enhanced by Al₂ O₃ compared to bare CdS/1 D Zr:Fe₂ O₃ heterojunction owing to its ability to act as an effective holetransport- as well as photocorrosion-protecting layer. These remarkable enhancements in light-energy harvesting, improvement in charge transport, and stability directly suggest the usefulness of photoanodes for solar hydrogen generation.

Effect of Nb Doping on Chemical Sensing Performance of Two-Dimensional Layered MoSe2

Here, we report that Nb doping of two-dimensional (2D) MoSe₂ layered nanomaterials is a promising approach to improve their gas sensing performance. In this study, Nb atoms were incorporated into a 2D MoSe₂ host matrix, and the Nb doping concentration could be precisely controlled by varying the number of Nb₂O₅ deposition cycles in the plasma enhanced atomic layer deposition process. At relatively low Nb dopant concentrations, MoSe₂ showed enhanced device durability as well as NO₂ gas response, attributed to its small grains and stabilized grain boundaries. Meanwhile, an increase in the Nb doping concentration deteriorated the NO₂ gas response. This might be attributed to a considerable increase in the number of metallic NbSe₂ regions, which do not respond to gas molecules. This novel method of doping 2D transition metal dichalcogenide-based nanomaterials with metal atoms is a promising approach to improve the performance such as stability and gas response of 2D gas sensors.

High-Performance One-Body Core/Shell Nanowire Supercapacitor Enabled by Conformal Growth of Capacitive 2D WS2 Layers

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) have emerged as promising capacitive materials for supercapacitor devices owing to their intrinsically layered structure and large surface areas. Hierarchically integrating 2D TMDs with other functional nanomaterials has recently been pursued to improve electrochemical performances; however, it often suffers from limited cyclic stabilities and capacitance losses due to the poor structural integrity at the interfaces of randomly assembled materials. Here, we report high-performance core/shell nanowire supercapacitors based on an array of one-dimensional (1D) nanowires seamlessly integrated with conformal 2D TMD layers. The 1D and 2D supercapacitor components possess "one-body" geometry with atomically sharp and structurally robust core/shell interfaces, as they were spontaneously converted from identical metal current collectors via sequential oxidation/sulfurization. These hybrid supercapacitors outperform previously developed any stand-alone 2D TMD-based supercapacitors; particularly, exhibiting an exceptional charge-discharge retention over 30,000 cycles owing to their structural robustness, suggesting great potential for unconventional energy storage technologies.

The influence of interfacial tensile strain on the charge transport characteristics of MoS2-based vertical heterojunction devices

We demonstrate the charge transport characteristics of MoS₂-based vertical heterojunction devices through the formation of interfacial strain. Atomically thin MoS₂ bilayers were directly synthesized on a p-type Si substrate by using chemical vapor deposition to introduce an interfacial tensile strain in the vertical heterojunction diode structure, which was confirmed by Raman, X-ray and ultraviolet photoelectron spectroscopy techniques. The electrical and optoelectronic properties of the heterojunction devices with the as-grown MoS₂ (A-MoS₂) on p-Si were compared with those of transferred MoS₂ (T-MoS₂)/p-Si devices. To clearly understand the charge transport characteristics induced by the interfacial tensile strain, the Fowler-Nordheim (FN) analysis of the electrical properties of the diode devices was conducted with the corresponding energy band diagrams. All of the fabricated MoS₂-based vertical diodes exhibited clearly rectifying behaviors, but the photoresponse properties of the A-MoS₂-based and T-MoS₂-based heterojunctions exhibited distinct differences. Interestingly, we found that the tunneling barrier heights of the A-MoS₂-based heterojunction devices were relatively higher than those of the T-MoS₂-based devices and were almost the same before and after illumination due to the interfacial tensile strain, whereas those of the T-MoS₂-based devices were lowered after illumination. Our study will help further understand the charge transport properties of 2D material-based heterojunction devices in the presence of interfacial strain, ultimately enabling the design of electronic and optoelectronic devices with novel functionalities.