Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions

For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm(2)/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.

Polarization-Mediated Thermal Stability of Metal/Oxide Heterointerface

A polarization-mediated heterointerface is designed to research the thermal stability of magnetic metal/oxide interfaces. Using polarization engineering, the thermal stability of the interface between BiFeO3 and CoFeB can be improved by about 100°C. This finding provides new insight into the chemistry of the metal/oxide heterointerface.

Structural, Magnetic and DFT studies on a Charge-Transfer Salt of a Tetrathiafulvalenepyridyl-(1,5-diisopropyl) verdazyl Diradical Cation

A new tetrathiafulvalene (TTF) donor covalently appended with a 1,5-diisopropylverdazyl radical through a cross-conjugated pyridyl linker (3) has been prepared and characterised. Reaction of 3 with tetracyanoquinonedimethane (TCNQ) afforded the 2:1 charge-transfer complex (3)₂ ⋅TCNQ (4), in which the IR and structural data are consistent with 0.25 e^- charge transfer from the TTF donor (D) to the TCNQ acceptor (A). The TTF and TCNQ molecules adopt a mixed-stack D⋅⋅⋅D⋅⋅⋅A arrangement that does not facilitate conduction. A solution EPR spectrum of 4 comprises a broad featureless singlet, which is consistent with the presence of a TCNQ radical anion. Theoretical studies were performed to probe the exchange interactions within selected fragments of 4 with and without charge transfer. In the absence of charge transfer, DFT calculations reveal weak antiferromagnetic exchange between verdazyl radicals within the (3)₂ monoradical unit. However, partial oxidation of the dimer (3)₂ to the diradical cation leads to an S= 1 / 2 ground state, in which the verdazyl radical spins are now aligned co-parallel as a consequence of antiferromagnetic exchange to the additional delocalised TTF-based spin containing unit. The magnetic properties of 4 are consistent with a net S= 1 / 2 spin state per formula unit with dominant antiferromagnetic interactions between spin-bearing building blocks.

Quantum entanglement at ambient conditions in a macroscopic solid-state spin ensemble

Entanglement is a key resource for quantum computers, quantum-communication networks, and high-precision sensors. Macroscopic spin ensembles have been historically important in the development of quantum algorithms for these prospective technologies and remain strong candidates for implementing them today. This strength derives from their long-lived quantum coherence, strong signal, and ability to couple collectively to external degrees of freedom. Nonetheless, preparing ensembles of genuinely entangled spin states has required high magnetic fields and cryogenic temperatures or photochemical reactions. We demonstrate that entanglement can be realized in solid-state spin ensembles at ambient conditions. We use hybrid registers comprising of electron-nuclear spin pairs that are localized at color-center defects in a commercial SiC wafer. We optically initialize 10(3) identical registers in a 40-μm(3) volume (with [Formula: see text] fidelity) and deterministically prepare them into the maximally entangled Bell states (with 0.88 ± 0.07 fidelity). To verify entanglement, we develop a register-specific quantum-state tomography protocol. The entanglement of a macroscopic solid-state spin ensemble at ambient conditions represents an important step toward practical quantum technology.

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators

Magnetic doping is the most common method for breaking time-reversal-symmetry surface states of topological insulators (TIs) to realize novel physical phenomena and to create beneficial technological applications. Here we present a study of the magnetic coupling of a prototype magnetic TI, that is, Cr-doped Bi2Se3, in its ultrathin limit which is expected to give rise to quantum anomalous Hall (QAH) effect. The high quality Bi2-xCrxSe3 epitaxial thin film was prepared using molecular beam epitaxy (MBE), characterized with scanning transimission electron microscopy (STEM), electrical magnetotransport, and X-ray magnetic circularly dichroism (XMCD) techniques, and the results were simulated using density functional theory (DFT) with spin-orbit coupling (SOC). We observed a sizable spin moment mspin = (2.05 ± 0.20) μB/Cr and a small and negative orbital moment morb = (-0.05 ± 0.02) μB/Cr of the Bi1.94Cr0.06Se3 thin film at 2.5 K. A remarkable fraction of the (CrBi-CrI)(3+) antiferromagnetic dimer in the Bi2-xCrxSe3 for 0.02 < x < 0.40 was obtained using first-principles simulations, which was neglected in previous studies. The spontaneous coexistence of ferro- and antiferromagnetic Cr defects in Bi2-xCrxSe3 explains our experimental observations and those based on conventional magnetometry which universally report magnetic moments significantly lower than 3 μB/Cr predicted by Hund's rule.

Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin-Orbit Coupling of Topological Insulator Bi2Se3

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling (SOC) and the existence of spin-textured surface states that might be potentially exploited for "topological spintronics." Here, we use spin pumping and the inverse spin Hall effect to demonstrate successful spin injection at room temperature from a metallic ferromagnet (CoFeB) into the prototypical 3D topological insulator Bi2Se3. The spin pumping process, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) line width. Theoretical modeling of spin pumping through the surface of Bi2Se3, as well as of the measured angular dependence of spin-charge conversion signal, suggests that pumped spin current is first greatly enhanced by the surface SOC and then converted into a dc-voltage signal primarily by the inverse spin Hall effect due to SOC of the bulk of Bi2Se3. We find that the FMR line width broadens significantly (more than a factor of 5) and we deduce a spin Hall angle as large as 0.43 in the Bi2Se3 layer.

Nanoscale Mapping of the Magnetic Properties of (111)-Oriented La(0.67)Sr(0.33)MnO3

Spatially resolved analysis of magnetic properties on the nanoscale remains challenging, yet strain and defects on this length-scale can profoundly affect a material's bulk performance. We present a detailed investigation of the magnetic properties of La0.67Sr0.33MnO3 thin films in both free-standing and nanowire form and assess the role of strain and local defects in modifying the films' magnetic properties. Lorentz transmission electron microscopy is used to measure the magnetocrystalline anisotropy and to map the Curie temperature and saturation magnetization with nanometric spatial resolution. Atomic-scale defects are identified as pinning sites for magnetic domain wall propagation. Measurement of domain wall widths and crystalline strain are used to identify a strong magnetoelastic contribution to the magnetic anisotropy. Together, these results provide unique insight into the relationship between the nanostructure and magnetic functionality of a ferromagnetic complex oxide film.

Hierarchical spin-orbital polarization of a giant Rashba system

The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent splitting of a single initially spin-degenerate band into two branches with opposite spin polarization. Combining polarization-dependent and resonant angle-resolved photoemission measurements with density functional theory calculations, we show that the two "spin-split" branches of the model giant Rashba system BiTeI additionally develop disparate orbital textures, each of which is coupled to a distinct spin configuration. This necessitates a reinterpretation of spin splitting in Rashba-like systems and opens new possibilities for controlling spin polarization through the orbital sector.

High-Curie-Temperature Ferromagnetism in (Sc,Fe)F3 Fluorides and its Dependence on Chemical Valence

A magnetic metal-fluoride system is shown for the first time to have a high Curie temperature (≈545 K). The magnetism correlates intimately with the Fe(2+)/Fe(3+) ratio. As the ratio increases, the weak magnetism displayed by unordered magnetic moments intensifies, and these magnetic moments align in parallel. Simultaneously, a magneto-volume effect is also shown to increase the lattice volume.

Quantum Spin-Quantum Anomalous Hall Insulators and Topological Transitions in Functionalized Sb(111) Monolayers

Electronic and topological behaviors of Sb(111) monolayers decorated with H and certain magnetic atoms are investigated by using ab initio methods. The drastic exchange field induced by the magnetic atoms, together with strong spin-orbit coupling (SOC) of Sb atoms, generates one new category of valley polarized topological insulators, called quantum spin-quantum anomalous Hall (QSQAH) insulators in the monolayer, with a band gap up to 53 meV. The strong SOC is closely related to Sb px and py orbitals, instead of pz orbitals in usual two-dimensional (2D) materials. Topological transitions from quantum anomalous Hall states to QSQAH states and then to time-reversal-symmetry-broken quantum spin Hall states are achieved by tuning the SOC strength. The behind mechanism is revealed. Our work is helpful for future valleytronic and spintronic applications in 2D materials.

Spin-Valve Effect in NiFe/MoS2/NiFe Junctions

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what is expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ∼9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

Selective Tuning of Gilbert Damping in Spin-Valve Trilayer by Insertion of Rare-Earth Nanolayers

Selective tuning of the Gilbert damping constant, α, in a NiFe/Cu/FeCo spin-valve trilayer has been achieved by inserting different rare-earth nanolayers adjacent to the ferromagnetic layers. Frequency dependent analysis of the ferromagnetic resonances shows that the initially small magnitude of α in the NiFe and FeCo layers is improved by Tb and Gd insertions to various amounts. Using the element-specific technique of X-ray magnetic circular dichroism, we find that the observed increase in α can be attributed primarily to the orbital moment enhancement of Ni and Co, rather than that of Fe. The amplitude of the enhancement depends on the specific rare-earth element, as well as on the lattice and electronic band structure of the transition metals. Our results demonstrate an effective way for individual control of the magnetization dynamics in the different layers of the spin-valve sandwich structures, which will be important for practical applications in high-frequency spintronic devices.

Half-Metallic Ferromagnetism and Surface Functionalization-Induced Metal-Insulator Transition in Graphene-like Two-Dimensional Cr2C Crystals

Graphene-like two-dimensional materials have garnered tremendous interest as emerging device materials for nanoelectronics due to their remarkable properties. However, their applications in spintronics have been limited by the lack of intrinsic magnetism. Here, using hybrid density functional theory, we predict ferromagnetic behavior in a graphene-like two-dimensional Cr2C crystal that belongs to the MXenes family. The ferromagnetism, arising from the itinerant Cr d electrons, introduces intrinsic half-metallicity in Cr2C MXene, with the half-metallic gap as large as 2.85 eV. We also demonstrate a ferromagnetic-antiferromagnetic transition accompanied by a metal to insulator transition in Cr2C, caused by surface functionalization with F, OH, H, or Cl groups. Moreover, the energy gap of the antiferromagnetic insulating state is controllable by changing the type of functional groups. We further point out that the localization of Cr d electrons induced by the surface functionalization is responsible for the ferromagnetic-antiferromagnetic and metal to insulator transitions. Our results highlight a new promising material with tunable magnetic and electronic properties toward nanoscale spintronics and electronics applications.

Photodrive of magnetic bubbles via magnetoelastic waves

Precise control of magnetic domain walls continues to be a central topic in the field of spintronics to boost infotech, logic, and memory applications. One way is to drive the domain wall by current in metals. In insulators, the incoherent flow of phonons and magnons induced by the temperature gradient can carry the spins, i.e., spin Seebeck effect, but the spatial and time dependence is difficult to control. Here, we report that coherent phonons hybridized with spin waves, magnetoelastic waves, can drive magnetic bubble domains, or curved domain walls, in an iron garnet, which are excited by ultrafast laser pulses at a nonabsorbing photon energy. These magnetoelastic waves were imaged by time-resolved Faraday microscopy, and the resultant spin transfer force was evaluated to be larger for domain walls with steeper curvature. This will pave a path for the rapid spatiotemporal control of magnetic textures in insulating magnets.

Magnetic Nano-skyrmion Lattice Observed in a Si-Wafer-Based Multilayer System

Growth, electronic properties, and magnetic properties of an Fe monolayer (ML) on an Ir/YSZ/Si(111) multilayer system have been studied using spin-polarized scanning tunneling microscopy. Our experiments reveal a magnetic nano-skyrmion lattice, which is fully equivalent to the magnetic ground state that has previously been observed for the Fe ML on Ir(111) bulk single crystals. In addition, the experiments indicate that the interface-stabilized skyrmion lattice is robust against local atomic lattice distortions induced by multilayer preparation.

Skyrmion-Based Dynamic Magnonic Crystal

A linear array of periodically spaced and individually controllable skyrmions is introduced as a magnonic crystal. It is numerically demonstrated that skyrmion nucleation and annihilation can be accurately controlled by a nanosecond spin polarized current pulse through a nanocontact. Arranged in a periodic array, such nanocontacts allow the creation of a skyrmion lattice that causes a periodic modulation of the waveguide's magnetization, which can be dynamically controlled by changing either the strength of an applied external magnetic field or the density of the injected spin current through the nanocontacts. The skyrmion diameter is highly dependent on both the applied field and the injected current. This implies tunability of the lowest band gap as the skyrmion diameter directly affects the strength of the pinning potential. The calculated magnonic spectra thus exhibit tunable allowed frequency bands and forbidden frequency bandgaps analogous to that of conventional magnonic crystals where, in contrast, the periodicity is structurally induced and static. In the dynamic magnetic crystal studied here, it is possible to dynamically turn on and off the artificial periodic structure, which allows switching between full rejection and full transmission of spin waves in the waveguide. These findings should stimulate further research activities on multiple functionalities offered by magnonic crystals based on periodic skyrmion lattices.

Looking Inside the Perchlorinated Trityl Radical/Metal Spinterface through Spectroscopy

We report on a spectroscopic multitechnique approach to study the metal/radical spinterface formed by a perchlorinated trityl radical derivative and either gold or silver. The spectroscopic fingerprint of their paramagnetic properties could be determined by comparison with their diamagnetic precursor and by DFT calculations. Thanks to the presented approach, we could gain unprecedented insight into the radical-metal interaction and how this latter perturbs the spin polarization and consequently the magnetoelectronic properties of the radical adlayer. Knowledge of the factors influencing the spinterface is an essential tool toward the tailoring of the properties of spin-based electronic devices.

Superior Properties of Energetically Stable La(2/3)Sr(1/3)MnO(3)/Tetragonal BiFeO3 Multiferroic Superlattices

The superlattice of energetically stable La2/3Sr1/3MnO3 and tetragonal BiFeO3 is investigated by means of density functional theory. The superlattice as a whole exhibits a half-metallic character, as is desired for spintronic devices. The interfacial electronic states and exchange coupling are analyzed in details. We demonstrate that the interfacial O atoms play a key role in controlling the coupling. The higher ferroelectricity of tetragonal BiFeO3 and stronger response to the magnetic moments in the La2/3Sr1/3MnO3/BiFeO3 superlattice show a strongly enhanced electric control of the magnetism as compared to the rhombohedral one. Therefore, it is particularly practical interest in the magnetoelectrically controlled spintronic devices.

Giant thermal spin-torque-assisted magnetic tunnel junction switching

Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts

Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap semiconducting material. Here, ambipolar field-effect transistor behavior of nanolayers of BP with ferromagnetic tunnel contacts is reported. Using TiO2/Co contacts, a reduced Schottky barrier <50 meV, which can be tuned further by the gate voltage, is obtained. Eminently, a good transistor performance is achieved in the devices discussed here, with drain current modulation of four to six orders of magnitude and a mobility of μh ≈ 155 cm(2) V(-1) s(-1) for hole conduction at room temperature. Magnetoresistance calculations using a spin diffusion model reveal that the source-drain contact resistances in the BP device can be tuned by gate voltage to an optimal range for injection and detection of spin-polarized holes. The results of the study demonstrate the prospect of BP nanolayers for efficient nanoelectronic and spintronic devices.

Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications

Following a remarkable success of metallic spintronics, tremendous efforts have been invested into the less developed semiconductor spintronics, in particular, with the aim to produce three-terminal spintronic devices, e.g., spin transistors. One of the most important prerequisites for such a technology is an effective injection of spin-polarized carriers into a nonmagnetic semiconductor, preferably one of those currently used for industrial applications such as Si-a workhorse of modern electronics. Ferromagnetic semiconductor EuO is long believed to be the best candidate for integration with Si. Although EuO proved to offer optimal conditions for effective spin injection into silicon and in spite of considerable efforts, the direct epitaxial stabilization of stoichiometric EuO thin films on Si without any buffer layer has not been demonstrated to date. Here we report a new technique for control of EuO/Si interface on submonolayer level. Using this technique we solve a long-standing problem of direct epitaxial growth on silicon of thin EuO films which exhibit structural and magnetic properties of EuO bulk material. This result opens up new possibilities in developing all-semiconductor spintronic devices.

Spin splitting anisotropy in single diluted magnetic nanowire heterostructures

We study the impact of the nanowire shape anisotropy on the spin splitting of excitonic photoluminescence. The experiments are performed on individual ZnMnTe/ZnMgTe core/shell nanowires as well as on ZnTe/ZnMgTe core/shell nanowires containing optically active magnetic CdMnTe insertions. When the magnetic field is oriented parallel to the nanowire axis, the spin splitting is several times larger than for the perpendicular field. We interpret this pronounced anisotropy as an effect of mixing of valence band states arising from the strain present in the core/shell geometry. This interpretation is further supported by theoretical calculations which allow to reproduce experimental results.

Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices

Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3) l ] m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.

Enhancing magnetic ordering in Cr-doped Bi2Se3 using high-TC ferrimagnetic insulator

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi(2-x)Cr(x)Se(3), via the proximity effect using a high-TC ferrimagnetic insulator Y(3)Fe(5)O(12). The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

Single-molecule electrochemical transistor utilizing a nickel-pyridyl spinterface

Using a scanning tunnelling microscope break-junction technique, we produce 4,4'-bipyridine (44BP) single-molecule junctions with Ni and Au contacts. Electrochemical control is used to prevent Ni oxidation and to modulate the conductance of the devices via nonredox gating--the first time this has been shown using non-Au contacts. Remarkably the conductance and gain of the resulting Ni-44BP-Ni electrochemical transistors is significantly higher than analogous Au-based devices. Ab-initio calculations reveal that this behavior arises because charge transport is mediated by spin-polarized Ni d-electrons, which hybridize strongly with molecular orbitals to form a "spinterface". Our results highlight the important role of the contact material for single-molecule devices and show that it can be varied to provide control of charge and spin transport.