Kamalakar MV, Madhushankar BN, Dankert A, Dash SP. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic
tunnel contacts.
Small 2015;
11:2209-2216. [PMID:
25586013 DOI:
10.1002/smll.201402900]
[Citation(s) in RCA: 40] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2014] [Revised: 11/12/2014] [Indexed: 06/04/2023]
Abstract
Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap semiconducting material. Here, ambipolar field-effect transistor behavior of nanolayers of BP with ferromagnetic tunnel contacts is reported. Using TiO2/Co contacts, a reduced Schottky barrier <50 meV, which can be tuned further by the gate voltage, is obtained. Eminently, a good transistor performance is achieved in the devices discussed here, with drain current modulation of four to six orders of magnitude and a mobility of μh ≈ 155 cm(2) V(-1) s(-1) for hole conduction at room temperature. Magnetoresistance calculations using a spin diffusion model reveal that the source-drain contact resistances in the BP device can be tuned by gate voltage to an optimal range for injection and detection of spin-polarized holes. The results of the study demonstrate the prospect of BP nanolayers for efficient nanoelectronic and spintronic devices.
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