Recent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers

The interface engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) has been regarded as a promising strategy to modulate their outstanding electrical and optoelectronic properties because of their inherent 2D nature and large surface-to-volume ratio. In particular, introducing organic molecules and polymers directly onto the surface of TMDs has been explored to passivate the surface defects or achieve better interfacial properties with neighboring surfaces efficiently, thus leading to great opportunities for the realization of high-performance TMD-based applications. This review provides recent progress in the interface engineering of TMDs with organic molecules and polymers corresponding to the modulation of their electrical and optoelectronic characteristics. Depending on the interfaces between the surface of TMDs and dielectric, conductive contacts or the ambient environment, we present various strategies to introduce an organic interlayer from materials to processing. In addition, the role of native defects on the surface of TMDs, such as adatoms or vacancies, in determining their electrical characteristics is also discussed in detail. Finally, the future challenges and opportunities associated with the interface engineering are highlighted.

Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

In the past decade, intensive studies on monolayer MoS₂-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS₂ have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS₂, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS₂ phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS₂ and lays the foundation for two-dimensional materials-based transparent phototransistors.

Dose-dependent effect of proton irradiation on electrical properties of WSe2 ambipolar field effect transistors

The irradiation effect of high energy proton beams on tungsten diselenide (WSe₂) ambipolar field-effect transistors was investigated. We measured the electrical characteristics of the fabricated WSe₂ FETs before and after the 10 MeV proton beam irradiation with different doses of 10¹², 10¹³, 10¹⁴, and 10¹⁵ cm^-2. For low dose conditions (10¹², 10¹³, and 10¹⁴ cm^-2), the threshold voltages shifted to the negative gate voltage direction, and the current in the hole and electron accumulation regimes decreased and increased, respectively. However, the trends were opposite for the high dose condition (10¹⁵ cm^-2); the threshold voltages shifted to the positive gate voltage direction, and the current in the hole and electron accumulation regimes increased and decreased, respectively. These phenomena can be explained by the combined effect of proton irradiation-induced traps and the applied gate bias condition. Specifically, irradiation-induced positive oxide traps in SiO₂ dielectrics play a role in enhancing electron accumulation and reducing hole accumulation in the WSe₂ channel, whereas the irradiation-induced holes near the WSe₂/SiO₂ interface act as electron trapping sites, with enhancing hole accumulation and reducing electron accumulation in the WSe₂ channel. This work will help improve the understanding of the effect of high energy irradiation on WSe₂-based and other ambipolar nanoelectronic devices. In addition, this work shows the possibility of tuning the electrical properties of WSe₂-based devices.

Altered Relationship between Working Memory and Brain Microstructure after Mild Traumatic Brain Injury

BACKGROUND AND PURPOSE

Working memory impairment is one of the most troubling and persistent symptoms after mild traumatic brain injury (MTBI). Here we investigate how working memory deficits relate to detectable WM microstructural injuries to discover robust biomarkers that allow early identification of patients with MTBI at the highest risk of working memory impairment.

MATERIALS AND METHODS

Multi-shell diffusion MR imaging was performed on a 3T scanner with 5 b-values. Diffusion metrics of fractional anisotropy, diffusivity and kurtosis (mean, radial, axial), and WM tract integrity were calculated. Auditory-verbal working memory was assessed using the Wechsler Adult Intelligence Scale, 4th ed, subtests: 1) Digit Span including Forward, Backward, and Sequencing; and 2) Letter-Number Sequencing. We studied 19 patients with MTBI within 4 weeks of injury and 20 healthy controls. Tract-Based Spatial Statistics and ROI analyses were performed to reveal possible correlations between diffusion metrics and working memory performance, with age and sex as covariates.

RESULTS

ROI analysis found a significant positive correlation between axial kurtosis and Digit Span Backward in MTBI (Pearson r = 0.69, corrected P = .04), mainly present in the right superior longitudinal fasciculus, which was not observed in healthy controls. Patients with MTBI also appeared to lose the normal associations typically seen in fractional anisotropy and axonal water fraction with Letter-Number Sequencing. Tract-Based Spatial Statistics results also support our findings.

CONCLUSIONS

Differences between patients with MTBI and healthy controls with regard to the relationship between microstructure measures and working memory performance may relate to known axonal perturbations occurring after injury.

Shape transformation and self-alignment of Fe-based nanoparticles

New types of functional material structures will emerge if the shape and properties are controlled in three-dimensional nanodevices. Possible applications of these would be nanoelectronics and medical systems. Magnetic nanoparticles (MNPs) are especially important in electronics such as magnetic storage, sensors, and spintronics. Also, in those that are used as magnetic resonance imaging contrasts, and tissue specific therapeutic agents, as well as in the labeling and sorting of cells, drug delivery, separation of biochemical products, and in other medical applications. Most of these applications require MNPs to be chemically stable, uniform in size, and controllable in terms of their magnetic properties and shape. In this paper three new functions of iron (Fe)-based nanoparticles are reported: shape transformation, oxidation prevention, and self-alignment. The shape of the Fe nanoparticles could be controlled by changing their oxidation states and properties by using a nanocarbon coating. Full field X-ray microscopy using synchrotron radiation revealed controllable magnetic properties of MNPs at the L₃ edge which depended on the oxidation states. Then, inkjet printing was successfully performed to deposit a uniform layer of MNPs by the size.

Tests of General Relativity with GW170817

The recent discovery by Advanced LIGO and Advanced Virgo of a gravitational wave signal from a binary neutron star inspiral has enabled tests of general relativity (GR) with this new type of source. This source, for the first time, permits tests of strong-field dynamics of compact binaries in the presence of matter. In this Letter, we place constraints on the dipole radiation and possible deviations from GR in the post-Newtonian coefficients that govern the inspiral regime. Bounds on modified dispersion of gravitational waves are obtained; in combination with information from the observed electromagnetic counterpart we can also constrain effects due to large extra dimensions. Finally, the polarization content of the gravitational wave signal is studied. The results of all tests performed here show good agreement with GR.

Recent Progress in Inkjet-Printed Thin-Film Transistors

Drop-on-demand inkjet printing is one of the most attractive techniques from a manufacturing perspective due to the possibility of fabrication from a digital layout at ambient conditions, thus leading to great opportunities for the realization of low-cost and flexible thin-film devices. Over the past decades, a variety of inkjet-printed applications including thin-film transistors (TFTs), radio-frequency identification devices, sensors, and displays have been explored. In particular, many research groups have made great efforts to realize high-performance TFTs, for application as potential driving components of ubiquitous wearable electronics. Although there are still challenges to enable the commercialization of printed TFTs beyond laboratory-scale applications, the field of printed TFTs still attracts significant attention, with remarkable developments in soluble materials and printing methodology. Here, recent progress in printing-based TFTs is presented from materials to applications. Significant efforts to improve the electrical performance and device-yield of printed TFTs to match those of counterparts fabricated using conventional deposition or photolithography methods are highlighted. Moreover, emerging low-dimension printable semiconductors, including carbon nanotubes and transition metal dichalcogenides as well as mature semiconductors, and new-concept printed switching devices, are also discussed.

Enhanced Charge Injection Properties of Organic Field-Effect Transistor by Molecular Implantation Doping

Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large-area fabrication. However, OSC devices still have to overcome contact resistance issues for better performances. Because of the Schottky contact at the metal-OSC interfaces, a non-ideal transfer curve feature often appears in the low-drain voltage region. To improve the contact properties of OSCs, there have been several methods reported, including interface treatment by self-assembled monolayers and introducing charge injection layers. Here, a selective contact doping of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄ -TCNQ) by solid-state diffusion in poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) to enhance carrier injection in bottom-gate PBTTT organic field-effect transistors (OFETs) is demonstrated. Furthermore, the effect of post-doping treatment on diffusion of F₄ -TCNQ molecules in order to improve the device stability is investigated. In addition, the application of the doping technique to the low-voltage operation of PBTTT OFETs with high-k gate dielectrics demonstrated a potential for designing scalable and low-power organic devices by utilizing doping of conjugated polymers.

Constraining the p-Mode-g-Mode Tidal Instability with GW170817

We analyze the impact of a proposed tidal instability coupling p modes and g modes within neutron stars on GW170817. This nonresonant instability transfers energy from the orbit of the binary to internal modes of the stars, accelerating the gravitational-wave driven inspiral. We model the impact of this instability on the phasing of the gravitational wave signal using three parameters per star: an overall amplitude, a saturation frequency, and a spectral index. Incorporating these additional parameters, we compute the Bayes factor (lnB_{!pg}^{pg}) comparing our p-g model to a standard one. We find that the observed signal is consistent with waveform models that neglect p-g effects, with lnB_{!pg}^{pg}=0.03_{-0.58}^{+0.70} (maximum a posteriori and 90% credible region). By injecting simulated signals that do not include p-g effects and recovering them with the p-g model, we show that there is a ≃50% probability of obtaining similar lnB_{!pg}^{pg} even when p-g effects are absent. We find that the p-g amplitude for 1.4  M_{⊙} neutron stars is constrained to less than a few tenths of the theoretical maximum, with maxima a posteriori near one-tenth this maximum and p-g saturation frequency ∼70  Hz. This suggests that there are less than a few hundred excited modes, assuming they all saturate by wave breaking. For comparison, theoretical upper bounds suggest ≲10^{3} modes saturate by wave breaking. Thus, the measured constraints only rule out extreme values of the p-g parameters. They also imply that the instability dissipates ≲10^{51}  erg over the entire inspiral, i.e., less than a few percent of the energy radiated as gravitational waves.

Highly uniform monolayer graphene synthesis via a facile pretreatment of copper catalyst substrates using an ammonium persulfate solution

A facile method for preparing a pretreated copper catalyst substrate for highly uniform, large-area CVD graphene growth is proposed.

Search for Subsolar-Mass Ultracompact Binaries in Advanced LIGO's First Observing Run

We present the first Advanced LIGO and Advanced Virgo search for ultracompact binary systems with component masses between 0.2  M_{⊙}-1.0  M_{⊙} using data taken between September 12, 2015 and January 19, 2016. We find no viable gravitational wave candidates. Our null result constrains the coalescence rate of monochromatic (delta function) distributions of nonspinning (0.2  M_{⊙}, 0.2  M_{⊙}) ultracompact binaries to be less than 1.0×10^{6}  Gpc^{-3}  yr^{-1} and the coalescence rate of a similar distribution of (1.0  M_{⊙}, 1.0  M_{⊙}) ultracompact binaries to be less than 1.9×10^{4}  Gpc^{-3}  yr^{-1} (at 90% confidence). Neither black holes nor neutron stars are expected to form below ∼1  M_{⊙} through conventional stellar evolution, though it has been proposed that similarly low mass black holes could be formed primordially through density fluctuations in the early Universe and contribute to the dark matter density. The interpretation of our constraints in the primordial black hole dark matter paradigm is highly model dependent; however, under a particular primordial black hole binary formation scenario we constrain monochromatic primordial black hole populations of 0.2  M_{⊙} to be less than 33% of the total dark matter density and monochromatic populations of 1.0  M_{⊙} to be less than 5% of the dark matter density. The latter strengthens the presently placed bounds from microlensing surveys of massive compact halo objects (MACHOs) provided by the MACHO and EROS Collaborations.

Highly Reliable Superhydrophobic Protection for Organic Field-Effect Transistors by Fluoroalkylsilane-Coated TiO2 Nanoparticles

One of the long-standing problems in the field of organic electronics is their instability in an open environment, especially their poor water resistance. For the reliable operation of organic devices, introducing an effective protection layer using organo-compatible materials and processes is highly desirable. Here, we report a facile method for the depositing of an organo-compatible superhydrophobic protection layer on organic semiconductors under ambient conditions. The protection layer exhibiting excellent water-repellent and self-cleaning properties was deposited onto organic semiconductors directly using a dip-coating process in a highly fluorinated solution with fluoroalkylsilane-coated titanium dioxide (TiO₂) nanoparticles. The proposed protection layer did not damage the underlying organic semiconductors and had good resistance against mechanical-, thermal-, light-stress-, and water-based threats. The protected organic field-effect transistors exhibited more-reliable electrical properties, even when exposed to strong solvents, due to its superhydrophobicity. This study provides a practical solution with which to enhance the reliability of environmentally sensitive organic semiconductor devices in the natural environment.

GW170817: Measurements of Neutron Star Radii and Equation of State

On 17 August 2017, the LIGO and Virgo observatories made the first direct detection of gravitational waves from the coalescence of a neutron star binary system. The detection of this gravitational-wave signal, GW170817, offers a novel opportunity to directly probe the properties of matter at the extreme conditions found in the interior of these stars. The initial, minimal-assumption analysis of the LIGO and Virgo data placed constraints on the tidal effects of the coalescing bodies, which were then translated to constraints on neutron star radii. Here, we expand upon previous analyses by working under the hypothesis that both bodies were neutron stars that are described by the same equation of state and have spins within the range observed in Galactic binary neutron stars. Our analysis employs two methods: the use of equation-of-state-insensitive relations between various macroscopic properties of the neutron stars and the use of an efficient parametrization of the defining function p(ρ) of the equation of state itself. From the LIGO and Virgo data alone and the first method, we measure the two neutron star radii as R_{1}=10.8_{-1.7}^{+2.0}  km for the heavier star and R_{2}=10.7_{-1.5}^{+2.1}  km for the lighter star at the 90% credible level. If we additionally require that the equation of state supports neutron stars with masses larger than 1.97  M_{⊙} as required from electromagnetic observations and employ the equation-of-state parametrization, we further constrain R_{1}=11.9_{-1.4}^{+1.4}  km and R_{2}=11.9_{-1.4}^{+1.4}  km at the 90% credible level. Finally, we obtain constraints on p(ρ) at supranuclear densities, with pressure at twice nuclear saturation density measured at 3.5_{-1.7}^{+2.7}×10^{34}  dyn cm^{-2} at the 90% level.

Artificial Soft Elastic Media with Periodic Hard Inclusions for Tailoring Strain-Sensitive Thin-Film Responses

Engineering the coupling behavior between a functional thin film and a soft substrate provides an attractive pathway for controlling various properties of thin-film materials. However, existing studies mostly rely on uniform deformation of the substrate, and the effect of well-regulated and nonuniform strain distributions on strain-sensitive thin-film responses still remains elusive. Herein, artificially strain-regulated elastic media are presented as a novel platform for tailoring strain-sensitive thin-film responses. The proposed artificial soft elastic media are composed of embedded arrays of inkjet-printed polymeric strain modulators that exhibit a high modulus contrast with respect to that of the soft matrix. This strain-modulating lattice induces spatially regulated strain distributions based on localized strain-coupling. Controlling the structural parameters and lattice configurations of the media leads to spatial modulation of the microscopically localized as well as macroscopically accumulated strain profiles. Uniform thin films coupled to these media undergo artificially tailored deformation through lattice-like strain-coupled pathways. The resulting phenomena yield programmable strain-sensitive responses such as spatial arrangement of ternary-state surface wrinkles and stepwise tuning of piezoresistive responses. This work will open a new avenue for addressing the issue of controlling strain-sensitive thin-film properties through structural engineering of artificial soft elastic media.

Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields

As two-dimensional (2D) transition metal dichalcogenides electronic devices are scaled down to the sub-micrometer regime, the active layers of these materials are exposed to high lateral electric fields, resulting in electrical breakdown. In this regard, understanding the intrinsic nature in layer-stacked 2D semiconducting materials under high lateral electric fields is necessary for the reliable applications of their field-effect transistors. Here, we explore the electrical breakdown phenomena originating from avalanche multiplication in MoS₂ field-effect transistors with different layer thicknesses and channel lengths. Modulating the band structure and bandgap energy in MoS₂ allows the avalanche multiplication to be controlled by adjusting the number of stacking layers. This phenomenon could be observed in transition metal dichalcogenide semiconducting systems due to its quantum confinement effect on the band structure. The relationship between the critical electric field for avalanche breakdown and bandgap energy is well fitted to a power law curve in both monolayer and multilayer MoS₂.

Search for Tensor, Vector, and Scalar Polarizations in the Stochastic Gravitational-Wave Background

The detection of gravitational waves with Advanced LIGO and Advanced Virgo has enabled novel tests of general relativity, including direct study of the polarization of gravitational waves. While general relativity allows for only two tensor gravitational-wave polarizations, general metric theories can additionally predict two vector and two scalar polarizations. The polarization of gravitational waves is encoded in the spectral shape of the stochastic gravitational-wave background, formed by the superposition of cosmological and individually unresolved astrophysical sources. Using data recorded by Advanced LIGO during its first observing run, we search for a stochastic background of generically polarized gravitational waves. We find no evidence for a background of any polarization, and place the first direct bounds on the contributions of vector and scalar polarizations to the stochastic background. Under log-uniform priors for the energy in each polarization, we limit the energy densities of tensor, vector, and scalar modes at 95% credibility to Ω_{0}^{T}<5.58×10^{-8}, Ω_{0}^{V}<6.35×10^{-8}, and Ω_{0}^{S}<1.08×10^{-7} at a reference frequency f_{0}=25  Hz.