Efficient and controlled domain wall nucleation for magnetic shift registers

Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires creating, manipulating and detecting domain walls in ferromagnetic strips. Recent observations have shown highly efficient current-driven domain wall dynamics in multilayers lacking structural symmetry, where the walls adopt a chiral structure and can be driven at high velocities. However, putting such a device into practice requires the continuous and synchronous injection of domain walls as the first step. Here, we propose and demonstrate an efficient and simple scheme for nucleating domain walls using the symmetry of the spin orbit torques. Trains of short sub-nanosecond current pulses are injected in a double bit line to generate a localized longitudinal Oersted field in the ferromagnetic strip. Simultaneously, other current pulses are injected through the heavy metal under the ferromagnetic strip. Notably, the Slonczewski-like spin orbit torque assisted by the Oersted field allows the controlled injection of a series of domain walls, giving rise to a controlled manner for writing binary information and, consequently, to the design of a simple and efficient domain wall shift register.

Magnetic Tunnel Junction as an On-Chip Temperature Sensor

Temperature sensors are becoming an increasingly important component in System-on-Chip (SoC) designs with increasing transistor scaling, power density and associated heating effects. This work explores a compact nanoelectronic temperature sensor based on a Magnetic Tunnel Junction (MTJ) structure. The MTJ switches probabilistically depending on the operating temperature in the presence of thermal noise. Performance evaluation of the proposed MTJ temperature sensor, based on experimentally measured device parameters, reveals that the sensor is able to achieve a conversion rate of 2.5K samples/s with energy consumption of 8.8 nJ per conversion (1–2 orders of magnitude lower than state-of-the-art CMOS sensors) for a linear sensing regime of 200–400 K.

Capping Layer (CL) Induced Antidamping in CL/Py/β-W System (CL: Al, β-Ta, Cu, β-W)

For achieving ultrafast switching speed and minimizing dissipation losses, the spin-based data storage device requires a control on effective damping (α_eff) of nanomagnetic bits. Incorporation of interfacial antidamping spin orbit torque (SOT) in spintronic devices therefore has high prospects for enhancing their performance efficiency. Clear evidence of such an interfacial antidamping is found in Al capped Py(15 nm)/β-W(t_W)/Si (Py = Ni₈₁Fe₁₉ and t_W = thickness of β-W), which is in contrast to the increase of α_eff (i.e., damping) usually associated with spin pumping as seen in Py(15 nm)/β-W(t_W)/Si system. Because of spin pumping, the interfacial spin mixing conductance (g^↑↓) at Py/β-W interface and spin diffusion length (λ_SD) of β-W are found to be 1.63(±0.02) × 10¹⁸ m^-2 (1.44(±0.02) × 10¹⁸ m^-2) and 1.42(±0.19) nm (1.00(±0.10) nm) for Py(15 nm)/β-W(t_W)/Si (β-W(t_W)/Py(15 nm)/Si) bilayer systems. Other different nonmagnetic capping layers (CL), namely, β-W(2 nm), Cu(2 nm), and β-Ta(2,3,4 nm) were also grown over the same Py(15 nm)/β-W(t_W). However, antidamping is seen only in β-Ta(2,3 nm)/Py(15 nm)/β-W(t_W)/Si. This decrease in α_eff is attributed to the interfacial Rashba like SOT generated by nonequilibrium spin accumulation subsequent to the spin pumping. Contrary to this, when interlayer positions of Py(15 nm) and β-W(t_W) is interchanged irrespective of the fixed top nonmagnetic layer, an increase of α_eff is observed, which is ascribed to spin pumping from Py to β-W layer.

Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.

Magneto-Optical Detection of the Spin Hall Effect in Pt and W Thin Films

The conversion of charge currents into spin currents in nonmagnetic conductors is a hallmark manifestation of spin-orbit coupling that has important implications for spintronic devices. Here we report the measurement of the interfacial spin accumulation induced by the spin Hall effect in Pt and W thin films using magneto-optical Kerr microscopy. We show that the Kerr rotation has opposite sign in Pt and W and scales linearly with current density. By comparing the experimental results with ab initio calculations of the spin Hall and magneto-optical Kerr effects, we quantitatively determine the current-induced spin accumulation at the Pt interface as 5×10^{-12}  μ_{B} A^{-1} cm^{2} per atom. From thickness-dependent measurements, we determine the spin diffusion length in a single Pt film to be 11±3  nm, which is significantly larger compared to that of Pt adjacent to a magnetic layer.

Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

Tuning Perpendicular Magnetic Anisotropy by Oxygen Octahedral Rotations in (La_{1-x}Sr_{x}MnO_{3})/(SrIrO_{3}) Superlattices

Perpendicular magnetic anisotropy (PMA) plays a critical role in the development of spintronics, thereby demanding new strategies to control PMA. Here we demonstrate a conceptually new type of interface induced PMA that is controlled by oxygen octahedral rotation. In superlattices comprised of La_{1-x}Sr_{x}MnO_{3} and SrIrO_{3}, we find that all superlattices (0≤x≤1) exhibit ferromagnetism despite the fact that La_{1-x}Sr_{x}MnO_{3} is antiferromagnetic for x>0.5. PMA as high as 4×10^{6}  erg/cm^{3} is observed by increasing x and attributed to a decrease of oxygen octahedral rotation at interfaces. We also demonstrate that oxygen octahedral deformation cannot explain the trend in PMA. These results reveal a new degree of freedom to control PMA, enabling discovery of emergent magnetic textures and topological phenomena.

Metallic ferromagnetic films with magnetic damping under 1.4 × 10-3

Low-damping magnetic materials have been widely used in microwave and spintronic applications because of their low energy loss and high sensitivity. While the Gilbert damping constant can reach 10-4 to 10-5 in some insulating ferromagnets, metallic ferromagnets generally have larger damping due to magnon scattering by conduction electrons. Meanwhile, low-damping metallic ferromagnets are desired for charge-based spintronic devices. Here, we report the growth of Co25Fe75 epitaxial films with excellent crystalline quality evident by the clear Laue oscillations and exceptionally narrow rocking curve in the X-ray diffraction scans as well as from scanning transmission electron microscopy. Remarkably, the Co25Fe75 epitaxial films exhibit a damping constant <1.4 × 10-3, which is comparable to the values for some high-quality Y3Fe5O12 films. This record low damping for metallic ferromagnets offers new opportunities for charge-based applications such as spin-transfer-torque-induced switching and magnetic oscillations.Owing to their conductivity, low-damping metallic ferromagnets are preferred to insulating ferromagnets in charge-based spintronic devices, but are not yet well developed. Here the authors achieve low magnetic damping in CoFe epitaxial films which is comparable to conventional insulating ferromagnetic YIG films.

Optical spin transfer and spin-orbit torques in thin film ferromagnets

We study the optically induced torques in thin film ferromagnetic layers under excitation by circularly polarized light. We study cases both with and without Rashba spin-orbit coupling using a 4-band model. In the absence of Rashba spin-orbit coupling, we derive an analytic expression for the optical torques, revealing the conditions under which the torque is mostly derived from optical spin transfer torque (i.e. when the torque is along the direction of optical angular momentum), versus when the torque is derived from the inverse Faraday effect (i.e. when the torque is perpendicular to the optical angular momentum). We find the optical spin transfer torque dominates provided that the excitation energy is far away from band edge transitions, and the magnetic exchange splitting is much greater than the lifetime broadening. For the case with large Rashba spin-orbit coupling and out-of-plane magnetization, we find the torque is generally perpendicular to the photon angular momentum and is ascribed to an optical Edelstein effect.

Thickness dependence of anomalous Nernst coefficient and longitudinal spin Seebeck effect in ferromagnetic NixFe100-x films

Spin Seebeck effect (SSE) measured for metallic ferromagnetic thin films in commonly used longitudinal configuration contains the contribution from anomalous Nernst effect (ANE). The ANE is considered to arise from the bulk of the ferromagnet (FM) and the proximity-induced FM boundary layer. We fabricate a FM alloy with zero Nernst coefficient to mitigate the ANE contamination of SSE and insert a thin layer of Cu to separate the heavy metal (HM) from the FM to avoid the proximity contribution. These modifications to the experiment should permit complete isolation of SSE from ANE in the longitudinal configuration. However, further thickness dependence studies and careful analysis of the results revealed, ANE contribution of the isolated FM alloy is twofold, surface and bulk. Both surface and bulk contributions, whose magnitudes are comparable to that of the SSE, can be modified by the neighboring layer. Hence surface contribution to the ANE in FM metals is an important effect that needs to be considered.

Enhanced spin-orbit coupling in tetragonally strained Fe-Co-B films

Tetragonally strained interstitial Fe-Co-B alloys were synthesized as epitaxial films grown on a 20 nm thick Au_0.55Cu_0.45 buffer layer. Different ratios of the perpendicular to in-plane lattice constant c/a  =  1.013, 1.034 and 1.02 were stabilized by adding interstitial boron with different concentrations 0, 4, and 10 at.%, respectively. Using ferromagnetic resonance (FMR) and x-ray magnetic circular dichroism (XMCD) we found that the total orbital magnetic moment significantly increases with increasing c/a ratio, indicating that reduced crystal symmetry and interstitial B leads to a noticeable enhancement of the effect of spin-orbit coupling (SOC) in the Fe-Co-B alloys. First-principles calculations reveal that the increase in orbital magnetic moment mainly originates from B impurities in octahedral position and the reduced symmetry around B atoms. These findings offer the possibility to enhance SOC phenomena-namely the magnetocrystalline anisotropy and the orbital moment-by stabilizing anisotropic strain by doping 4 at.% B. Results on the influence of B doping on the Fe-Co film microstructure, their coercive field and magnetic relaxation are also presented.

Bi-directional high speed domain wall motion in perpendicular magnetic anisotropy Co/Pt double stack structures

We report bi-directional domain wall (DW) motion along and against current flow direction in Co/Pt double stack wires with Ta capping. The bi-directionality is achieved by application of hard-axis magnetic field favoring and opposing the Dzyloshinskii-Moriya interaction (DMI), respectively. The speed obtained is enhanced when the hard-axis field favors the DMI and is along the current flow direction. Co/Pt double stack is a modification proposed for the high spin-orbit torque strength Pt/Co/Ta stack, to improve its thermal stability and perpendicular magnetic anisotropy (PMA). The velocity obtained reduces with increase in Pt spacer thickness due to reduction in DMI and enhances on increasing the Ta capping thickness due to higher SOT strength. The velocity obtained is as high as 530 m/s at a reasonable current density of 1 × 10¹² A/m² for device applications. The low anisotropy of the device coupled with the application of hard-axis field aids the velocity enhancement by preventing Walker breakdown.

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

Three fundamental devices in one: a reconfigurable multifunctional device in two-dimensional WSe2

The three pillars of semiconductor device technologies are (1) the p-n diode, (2) the metal-oxide-semiconductor field-effect transistor and (3) the bipolar junction transistor. They have enabled the unprecedented growth in the field of information technology that we see today. Until recently, the technological revolution for better, faster and more efficient devices has been governed by scaling down the device dimensions following Moore's Law. With the slowing of Moore's law, there is a need for alternative materials and computing technologies that can continue the advancement in functionality. Here, we describe a single, dynamically reconfigurable device that implements these three fundamental device functions. The device uses buried gates to achieve n- and p-channels and fits into a larger effort to develop devices with enhanced functionalities, including logic functions, over device scaling. As they are all surface conducting devices, we use one material parameter, the interface trap density of states, to describe the key figure-of-merit of each device.

Toy model for uncommon spin-orbit-driven spin-torque terms

A toy model combining the angular magneto electric (AME) coupling Hamitonian (Mondal et al 2015 Phys. Rev. B 92 100402) with long-range magnetic dipolar interactions is used to investigate spin-torque phenomena in a magnetic spin valve. It is found that such model (1) gives rise to spin-torque expressions that are analogous in form to those of the common spin-transfer torques; but also (2) predicts additional spin-torque terms, which are generated by an electrical current oriented along unconventional, in-plane directions. The magnitude of the AME induced terms is estimated and the conditions under which they may contribute significantly are explored.

Dynamical amplification of magnetoresistances and Hall currents up to the THz regime

Spin-orbit-related effects offer a highly promising route for reading and writing information in magnetic units of future devices. These phenomena rely not only on the static magnetization orientation but also on its dynamics to achieve fast switchings that can reach the THz range. In this work, we consider Co/Pt and Fe/W bilayers to show that accounting for the phase difference between different processes is crucial to the correct description of the dynamical currents. By tuning each system towards its ferromagnetic resonance, we reveal that dynamical spin Hall angles can non-trivially change sign and be boosted by over 500%, reaching giant values. We demonstrate that charge and spin pumping mechanisms can greatly magnify or dwindle the currents flowing through the system, influencing all kinds of magnetoresistive and Hall effects, thus impacting also dc and second harmonic experimental measurements.

Experimental Demonstration of Complete 180° Reversal of Magnetization in Isolated Co Nanomagnets on a PMN-PT Substrate with Voltage Generated Strain

Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in nonvolatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180°. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90°, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180°. Here, we demonstrate this complete 180° rotation in elliptical Co nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ∼ +30° and the line joining the centers of the electrodes in the other pair intersects at ∼ -30°. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient nonvolatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.

Current-induced skyrmion generation and dynamics in symmetric bilayers

Magnetic skyrmions are quasiparticle-like textures which are topologically different from other states. Their discovery in systems with broken inversion symmetry sparked the search for materials containing such magnetic phase at room temperature. Their topological properties combined with the chirality-related spin–orbit torques make them interesting objects to control the magnetization at nanoscale. Here we show that a pair of coupled skyrmions of opposite chiralities can be stabilized in a symmetric magnetic bilayer system by combining Dzyaloshinskii–Moriya interaction (DMI) and dipolar coupling effects. This opens a path for skyrmion stabilization with lower DMI. We demonstrate in a device with asymmetric electrodes that such skyrmions can be independently written and shifted by electric current at large velocities. The skyrmionic nature of the observed quasiparticles is confirmed by the gyrotropic force. These results set the ground for emerging spintronic technologies where issues concerning skyrmion stability, nucleation and propagation are paramount.

The creation of practical devices based on magnetic skyrmions depends on the development of methods to create and control stable individual skyrmions. Here, the authors present a bilayer device that uses dipolar interactions to stabilize skyrmions that can be manipulated using electric currents.

Spin-orbit torque-driven skyrmion dynamics revealed by time-resolved X-ray microscopy

Magnetic skyrmions are topologically protected spin textures with attractive properties suitable for high-density and low-power spintronic device applications. Much effort has been dedicated to understanding the dynamical behaviours of the magnetic skyrmions. However, experimental observation of the ultrafast dynamics of this chiral magnetic texture in real space, which is the hallmark of its quasiparticle nature, has so far remained elusive. Here, we report nanosecond-dynamics of a 100nm-diameter magnetic skyrmion during a current pulse application, using a time-resolved pump-probe soft X-ray imaging technique. We demonstrate that distinct dynamic excitation states of magnetic skyrmions, triggered by current-induced spin–orbit torques, can be reliably tuned by changing the magnitude of spin–orbit torques. Our findings show that the dynamics of magnetic skyrmions can be controlled by the spin–orbit torque on the nanosecond time scale, which points to exciting opportunities for ultrafast and novel skyrmionic applications in the future.

Magnetic skyrmions are potentially suitable for future spintronic devices, but their dynamical behaviour in real space remains elusive. Here, Woo et al. report nanosecond-dynamics of a 100nm-size magnetic skyrmion triggered by current-induced spin-orbit torques.

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III–V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.

Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions

Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdO_x tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and a large proximity-induced magnetization of GdO_x, both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. These results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling.

Exploring electric field controlled magnetism enables high efficiency and low energy consumption spintronic devices. Here, by manipulating oxygen vacancies and magnetic moment, the authors achieve voltage control of magnetic interlayer coupling in GdO_x based magnetic tunnel junctions.

Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields

Two-dimensional materials provide a unique platform to explore the full potential of magnetic proximity-driven phenomena, which can be further used for applications in next-generation spintronic devices. Of particular interest is to understand and control spin currents in graphene by the magnetic exchange field of a nearby ferromagnetic material in graphene-ferromagnetic-insulator (FMI) heterostructures. Here, we present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to FMI magnetization. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. Additionally, we discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the nonlocal spin signals in graphene, which is due to spin relaxation by thermally induced transverse fluctuations of the FMI magnetization.

Large spin Hall angle in vanadium film

We report a large spin Hall angle observed in vanadium films sputter-grown at room temperature, which have small grain size and consist of a mixture of body centered tetragonal (bct) and body centered cubic (bcc) structures. The spin Hall angle is as large as θ_V = −0.071 ± 0.003, comparable to that of platinum, θ_Pt = 0.076 ± 0.007, and is much larger than that of bcc V film grown at 400 °C, θ_{V_bcc} = −0.012 ± 0.002. Similar to β-tantalum and β-tungsten, the sputter-grown V films also have a high resistivity of more than 200 μΩ∙cm. Surprisingly, the spin diffusion length is still long at 16.3 nm. This finding not only indicates that specific crystalline structure can lead to a large spin Hall effect but also suggests 3d light metals should not be ruled out in the search for materials with large spin Hall angle.

Dramatic influence of curvature of nanowire on chiral domain wall velocity

The use of current pulses to move domain walls along nanowires is one of the most exciting developments in spintronics over the past decade. We show that changing the sign of the curvature of a nanowire changes the speed of chiral Néel domain walls in perpendicularly magnetized nanowires by up to a factor of 10. The domain walls have an increased or decreased velocity in wires of a given curvature, independent of the domain wall chirality and the sign of the current-induced spin-orbit torques. Thus, adjacent domain walls move at different speeds. For steady motion of domain walls along the curved nanowire, the torque must increase linearly with the radius, which thereby results in a width-dependent tilting of the domain wall. We show that by using synthetic antiferromagnetic nanowires, the influence of the curvature on the domain wall's velocity is eliminated, and all domain walls move together, emphasizing the use of such structures for spintronic applications.

Anomalous Current-Induced Spin Torques in Ferrimagnets near Compensation

While current-induced spin-orbit torques have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative exchange interaction in ferrimagnets. The effective field and switching efficiency increase substantially as CoGd approaches its compensation point, giving rise to 9 times larger spin-orbit torques compared to that of a noncompensated one. The macrospin modeling results also support efficient spin-orbit torques in a ferrimagnet. Our results suggest that ferrimagnets near compensation can be a new route for spin-orbit torque applications due to their high thermal stability and easy current-induced switching assisted by negative exchange interaction.

Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures

When a current is passed through a non-magnetic metal with strong spin-orbit coupling, an orthogonal spin current is generated. This spin current can be used to switch the magnetization of an adjacent ferromagnetic layer or drive its magnetization into continuous precession. The interface, which is not necessarily sharp, and the crystallographic structure of the nonmagnetic metal can both affect the strength of current-induced spin-orbit torques. Here, we investigate the effects of interface intermixing and film microstructure on spin-orbit torques in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with different Ta layer thickness (5 nm, 10 nm, 15 nm), greater than the spin diffusion length. Effective spin-orbit torques are determined from harmonic Hall voltage measurements performed at temperatures ranging from 20 K to 300 K. We account for the temperature dependence of damping-like and field-like torques by including an additional contribution from the Ta/CoFeB interface in the spin diffusion model. Using this approach, the temperature variations of the spin Hall angle in the Ta underlayer and at the Ta/CoFeB interface are determined separately. Our results indicate an almost temperature-independent spin Hall angle of [Formula: see text] in Ta and a strongly temperature-dependent [Formula: see text] for the intermixed Ta/CoFeB interface.

Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt/[Co/Ni] n /Co/Ta Multilayer Hall Bars

Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show that by selecting a film stack with weak out-of-plane magnetic anisotropy, field-free SOT-induced switching can be achieved in micron sized multilayers. Using direct current, deterministic bipolar magnetization reversal is obtained in Pt/[Co/Ni]₂/Co/Ta structures. Kerr imaging reveals that the SOT-induced magnetization switching process is completed via the nucleation of reverse domain and propagation of domain wall in the system.

Room-Temperature Current-Induced Generation and Motion of sub-100 nm Skyrmions

Magnetic skyrmions are nanoscale windings of the spin configuration that hold great promise for technology due to their topology-related properties and extremely reduced sizes. After the recent observation at room temperature of sub-100 nm skyrmions stabilized by interfacial chiral interaction in magnetic multilayers, several pending questions remain to be solved, notably about the means to nucleate individual compact skyrmions or the exact nature of their motion. In this study, a method leading to the formation of magnetic skyrmions in a micrometer-sized track using homogeneous current injection is evidenced. Spin-transfer-induced motion of these small electrical-current-generated skyrmions is then demonstrated and the role of the out-of-plane magnetic field in the stabilization of the moving skyrmions is also analyzed. The results of these experimental observations of spin torque induced motion are compared to micromagnetic simulations reproducing a granular type, nonuniform magnetic multilayer in order to address the particularly important role of the magnetic inhomogeneities on the current-induced motion of sub-100 nm skyrmions for which the material grains size is comparable to the skyrmion diameter.

Investigation of spin-orbit torque using current-induced magnetization curve

Manipulation of magnetization using current-induced torque is crucial for magnetic recording devices. Recently, the spin-orbit torque (SOT) that emerges in a ferromagnetic thin film on a heavy metal is focused as a new scheme for magnetization switching in perpendicularly magnetized systems. Since the SOT provides a perpendicular effective field to the system, the formation of a magnetic multiple domain state because of Joule heating is supressed in the magnetization reversal process. This means that high reliable switching is possible using the SOT. Here, by utilizing the SOT induced domain stability, we show that an electrical current directly injected to a perpendicularly magnetized Pt/Co/Pd system can magnetize itself, that is, current-induced magnetization process from multi to single domain state. A quantitative determination of the SOT is performed using the current-induced magnetization curve. The present results are of great importance as another approach to evaluate the SOT effect, as well as a demonstration of domain state switching caused by the SOT.

X-ray imaging of spin currents and magnetisation dynamics at the nanoscale

Understanding how spins move in time and space is the aim of both fundamental and applied research in modern magnetism. Over the past three decades, research in this field has led to technological advances that have had a major impact on our society, while improving the understanding of the fundamentals of spin physics. However, important questions still remain unanswered, because it is experimentally challenging to directly observe spins and their motion with a combined high spatial and temporal resolution. In this article, we present an overview of the recent advances in x-ray microscopy that allow researchers to directly watch spins move in time and space at the microscopically relevant scales. We discuss scanning x-ray transmission microscopy (STXM) at resonant soft x-ray edges, which is available at most modern synchrotron light sources. This technique measures magnetic contrast through the x-ray magnetic circular dichroism (XMCD) effect at the resonant absorption edges, while focusing the x-ray radiation at the nanometre scale, and using the intrinsic pulsed structure of synchrotron-generated x-rays to create time-resolved images of magnetism at the nanoscale. In particular, we discuss how the presence of spin currents can be detected by imaging spin accumulation, and how the magnetisation dynamics in thin ferromagnetic films can be directly imaged. We discuss how a direct look at the phenomena allows for a deeper understanding of the the physics at play, that is not accessible to other, more indirect techniques. Finally, we present an overview of the exciting opportunities that lie ahead to further understand the fundamentals of novel spin physics, opportunities offered by the appearance of diffraction limited storage rings and free electron lasers.

Anomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection

Spin-orbit torques (SOTs) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques, and understanding the combined effects of these two torque components is required for efficient SOT switching. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted considering the damping-like torque alone. We report a decreased switching probability at longer pulse widths, based on time-resolved measurements. Micromagnetic analysis reveals that this anomalous SOT switching results from domain wall reflections at sample edges. The domain wall reflection was found to strongly depend on the field-like torque and its relative sign to the damping-like torque. Our result demonstrates a key role of the field-like torque in deterministic SOT switching and the importance of the sign correlation of the two torque components, which may shed light on the SOT switching mechanism.

Interface-Induced Phenomena in Magnetism

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

Intrinsic optimization using stochastic nanomagnets

This paper draws attention to a hardware system which can be engineered so that its intrinsic physics is described by the generalized Ising model and can encode the solution to many important NP-hard problems as its ground state. The basic constituents are stochastic nanomagnets which switch randomly between the ±1 Ising states and can be monitored continuously with standard electronics. Their mutual interactions can be short or long range, and their strengths can be reconfigured as needed to solve specific problems and to anneal the system at room temperature. The natural laws of statistical mechanics guide the network of stochastic nanomagnets at GHz speeds through the collective states with an emphasis on the low energy states that represent optimal solutions. As proof-of-concept, we present simulation results for standard NP-complete examples including a 16-city traveling salesman problem using experimentally benchmarked models for spin-transfer torque driven stochastic nanomagnets.

Spin diffusion and torques in disordered antiferromagnets

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

Electric Control of Dirac Quasiparticles by Spin-Orbit Torque in an Antiferromagnet

Spin orbitronics and Dirac quasiparticles are two fields of condensed matter physics initiated independently about a decade ago. Here we predict that Dirac quasiparticles can be controlled by the spin-orbit torque reorientation of the Néel vector in an antiferromagnet. Using CuMnAs as an example, we formulate symmetry criteria allowing for the coexistence of topological Dirac quasiparticles and Néel spin-orbit torques. We identify the nonsymmorphic crystal symmetry protection of Dirac band crossings whose on and off switching is mediated by the Néel vector reorientation. We predict that this concept verified by minimal model and density functional calculations in the CuMnAs semimetal antiferromagnet can lead to a topological metal-insulator transition driven by the Néel vector and to the topological anisotropic magnetoresistance.

Current-Induced Generation and Synchronous Motion of Highly Packed Coupled Chiral Domain Walls

Chiral domain walls of Neel type emerge in heterostructures that include heavy metal (HM) and ferromagnetic metal (FM) layers owing to the Dzyaloshinskii-Moriya (DM) interaction at the HM/FM interface. In developing storage class memories based on the current induced motion of chiral domain walls, it remains to be seen how dense such domain walls can be packed together. Here we show that a universal short-range repulsion that scales with the strength of the DM interaction exists among chiral domain walls. The distance between the two walls can be reduced with the application of the out-of-plane field, allowing the formation of coupled domain walls. Surprisingly, the current driven velocity of such coupled walls is independent of the out-of-plane field, enabling manipulation of significantly compressed coupled domain walls using current pulses. Moreover, we find that a single current pulse with optimum amplitude can create a large number of closely spaced domain walls. These features allow current induced generation and synchronous motion of highly packed chiral domain walls, a key feature essential for developing domain wall based storage devices.

Current-induced switching in a magnetic insulator

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Anomalous resistivity upturn in epitaxial L21-Co2MnAl films

Despite of the great scientific and technology interest, highly ordered full-Heusler L2₁-Co₂MnAl films have remained a big challenge in terms of the availability and the electrical transport. Here we report the controllable growth and the intriguing transport behavior of epitaxial L2₁-Co₂MnAl films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T^1/2 dependence, a robust independence of magnetic fields, and a close relevance to structural disorder. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the origin of the resistivity upturn.

Initialization-Free Multilevel States Driven by Spin-Orbit Torque Switching

By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin-orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial configurations. The initialization-free multilevel memory advances the spin-orbit-torque magnetic random access memory to higher storage density for practical applications.

The mechanical response in a fluid of synthetic antiferromagnetic and ferrimagnetic microdiscs with perpendicular magnetic anisotropy

In this article, we demonstrate the magneto-mechanic behavior in a fluid environment of perpendicularly magnetized microdiscs with antiferromagnetic interlayer coupling. When suspended in a fluid and under the influence of a simple uniaxial applied magnetic field sequence, the microdiscs mechanically rotate to access the magnetic saturation processes that are either that of the easy axis, hard axis, or in-between the two, in order to lower their energy. Further, these transitions enable the magnetic particles to form reconfigurable magnetic chains, and transduce torque from uniaxial applied fields. These microdiscs offer an attractive platform for the fabrication of fluid based micro- and nanodevices, and dynamically self assembled complex architectures.

A 20 nm spin Hall nano-oscillator

Spin Hall nano-oscillators (SHNOs) are an emerging class of pure spin current driven microwave signal generators. Through the fabrication of 20 nm nano-constrictions in Pt/NiFe bilayers, we demonstrate that SHNOs can be scaled down to truly nanoscopic dimensions, with the added benefit of ultra-low operating currents and improved power conversion efficiency. The lateral confinement leads to a strong shape anisotropy field as well as an additional demagnetizing field whose reduction with increasing auto-oscillation amplitude can yield a positive current tunability contrary to the negative tunability commonly observed for localized excitations in extended magnetic layers. Micromagnetic simulations corroborate the experimental findings and suggest that the active magnetodynamic area resides up to 100 nm outside of the nano-constriction.

Nonlocal Spin Diffusion Driven by Giant Spin Hall Effect at Oxide Heterointerfaces

A two-dimensional electron gas emerged at a LaAlO₃/SrTiO₃ interface is an ideal system for "spin-orbitronics" as the structure itself strongly couple the spin and orbital degree of freedom through the Rashba spin-orbit interaction. One of core experiments toward this direction is the nonlocal spin transport measurement, which has remained elusive due to the low spin injection efficiency to this system. Here we bypass the problem by generating a spin current not through the spin injection from outside but instead through the inherent spin Hall effect and demonstrate the nonlocal spin transport. The analysis on the nonlocal spin voltage, confirmed by the signature of a Larmor spin precession and its length dependence, displays that both D'yakonov-Perel' and Elliott-Yafet mechanisms involve in the spin relaxation at low temperature. Our results show that the oxide heterointerface is highly efficient in spin-charge conversion with exceptionally strong spin Hall coefficient γ ∼ 0.15 ± 0.05 and could be an outstanding platform for the study of coupled charge and spin transport phenomena and their electronic applications.

Room-Temperature Skyrmion Shift Device for Memory Application

Magnetic skyrmions are intensively explored for potential applications in ultralow-energy data storage and computing. To create practical skyrmionic memory devices, it is necessary to electrically create and manipulate these topologically protected information carriers in thin films, thus realizing both writing and addressing functions. Although room-temperature skyrmions have been previously observed, fully electrically controllable skyrmionic memory devices, integrating both of these functions, have not been developed to date. Here, we demonstrate a room-temperature skyrmion shift memory device, where individual skyrmions are controllably generated and shifted using current-induced spin-orbit torques. Particularly, it is shown that one can select the device operation mode in between (i) writing new single skyrmions or (ii) shifting existing skyrmions by controlling the magnitude and duration of current pulses. Thus, we electrically realize both writing and addressing of a stream of skyrmions in the device. This prototype demonstration brings skyrmions closer to real-world computing applications.

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>10³ %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

Magnetic damping and perpendicular magnetic anisotropy in Pd-buffered [Co/Ni]5 and [Ni/Co]5 multilayers

The magnetic damping α₀ increases continuously with underlayer thickness, showing no correlation with PMA strength but a similar variation behavior to 1/M_s. Such α₀ increase is ascribed to the formation of more disordered spins at NM/FM interface.

High-Performance THz Emitters Based on Ferromagnetic/Nonmagnetic Heterostructures

A low-cost, intense, broadband, noise resistive, magnetic field controllable, flexible, and low power driven THz emitter based on thin nonmagnetic/ferromagnetic metallic heterostructures is demonstrated. The THz emission origins from the inverse spin Hall Effect. The proposed devices are not only promising for a wide range of THz equipment, but also offer an alternative approach to characterize the spin-orbit interaction in nonmagnetic/ferromagnetic bilayers.

Two magnon scattering and anti-damping behavior in a two-dimensional epitaxial TiN/Py(tPy)/β-Ta(tTa) system

Anti-damping in two-magnon scattering free two-dimensional epitaxial Si(400)/TiN(200) (8 nm)/Py(200) (12 nm)/Ta(200) (6 nm) system.