Chloride Passivation of ZnO Electrodes Improves Charge Extraction in Colloidal Quantum Dot Photovoltaics

Doping ZnO Electron Transport Layers with MoS2 Nanosheets Enhances the Efficiency of Polymer Solar Cells

In this study, we incorporated molybdenum disulfide (MoS₂) nanosheets into sol-gel processing of zinc oxide (ZnO) to form ZnO:MoS₂ composites for use as electron transport layers (ETLs) in inverted polymer solar cells featuring a binary bulk heterojunction active layer. We could effectively tune the energy band of the ZnO:MoS₂ composite film from 4.45 to 4.22 eV by varying the content of MoS₂ up to 0.5 wt %, such that the composite was suitable for use in bulk heterojunction photovoltaic devices based on poly[bis(5-(2-ethylhexyl)thien-2-yl)benzodithiophene- alt-(4-(2-ethylhexyl)-3-fluorothienothiophene)-2-carboxylate-2,6-diyl] (PTB7-TH)/phenyl-C₇₁-butryric acid methyl ester (PC₇₁BM). In particular, the power conversion efficiency (PCE) of the PTB7-TH/PC₇₁BM (1:1.5, w/w) device incorporating the ZnO:MoS₂ (0.5 wt %) composite layer as the ETL was 10.1%, up from 8.8% for the corresponding device featuring ZnO alone as the ETL, a relative increase of 15%. Incorporating a small amount of MoS₂ nanosheets into the ETL altered the morphology of the ETL and resulted in enhanced current densities, fill factors, and PCEs for the devices. We used ultraviolet photoelectron spectroscopy, synchrotron grazing incidence wide-/small-angle X-ray scattering, atomic force microscopy, and transmission electron microscopy to characterize the energy band structures, internal structures, surface roughness, and morphologies, respectively, of the ZnO:MoS₂ composite films.

Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics

Photovoltaic (PV) materials such as perovskites and silicon are generally unabsorptive at wavelengths longer than 1100 nm, leaving a significant portion of the IR solar spectrum unharvested. Small-bandgap colloidal quantum dots (CQDs) are a promising platform to offer tandem complementary IR PV solutions. Today, the best performing CQD PVs use zinc oxide (ZnO) as an electron-transport layer. However, these electrodes require ultraviolet (UV)-light activation to overcome the low carrier density of ZnO, precluding the realization of CQD tandem photovoltaics. Here, a new sol-gel UV-free electrode based on Al/Cl hybrid doping of ZnO (CAZO) is developed. Al heterovalent doping provides a strong n-type character while Cl surface passivation leads to a more favorable band alignment for electron extraction. CAZO CQD IR solar cell devices exhibit, at wavelengths beyond the Si bandgap, an external quantum efficiency of 73%, leading to an additional 0.92% IR power conversion efficiency without UV activation. Conventional ZnO devices, on the other hand, add fewer than 0.01 power points at these operating conditions.

Highly Efficient Inverted Structural Quantum Dot Solar Cells

Highly efficient PbS colloidal quantum dot (QD) solar cells based on an inverted structure have been missing for a long time. The bottlenecks are the construction of an effective p-n heterojunction at the illumination side with smooth band alignment and the absence of serious interface carrier recombination. Here, solution-processed nickel oxide (NiO) as the p-type layer and lead sulfide (PbS) QDs with iodide ligand as the n-type layer are explored to build a p-n heterojunction at the illumination side. The large depletion region in the QD layer at the illumination side leads to high photocurrent. Interface carrier recombination at the interface is effectively prohibited by inserting a layer of slightly doped p-type QDs with 1,2-ethanedithiol as ligands, leading to improved voltage of the device. Based on this graded device structure design, the efficiency of inverted structural heterojunction PbS QD solar cells is improved to 9.7%, one time higher than the highest efficiency achieved before.

Infrared Solution-Processed Quantum Dot Solar Cells Reaching External Quantum Efficiency of 80% at 1.35 µm and Jsc in Excess of 34 mA cm-2

Developing low-cost photovoltaic absorbers that can harvest the short-wave infrared (SWIR) part of the solar spectrum, which remains unharnessed by current Si-based and perovskite photovoltaic technologies, is a prerequisite for making high-efficiency, low-cost tandem solar cells. Here, infrared PbS colloidal quantum dot (CQD) solar cells employing a hybrid inorganic-organic ligand exchange process that results in an external quantum efficiency of 80% at 1.35 µm are reported, leading to a short-circuit current density of 34 mA cm^-2 and a power conversion efficiency (PCE) up to 7.9%, which is a current record for SWIR CQD solar cells. When this cell is placed at the back of an MAPbI₃ perovskite film, it delivers an extra 3.3% PCE by harnessing light beyond 750 nm.