51
|
Yu D, Wang Z, Chi G, Zhang Q, Fu J, Li M, Liu C, Zhou Q, Li Z, Chen D, Song Z, He Z. Hydraulic-driven adaptable morphing active-cooling elastomer with bioinspired bicontinuous phases. Nat Commun 2024; 15:1179. [PMID: 38332017 PMCID: PMC10853206 DOI: 10.1038/s41467-024-45562-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Accepted: 01/29/2024] [Indexed: 02/10/2024] Open
Abstract
The active-cooling elastomer concept, originating from vascular thermoregulation for soft biological tissue, is expected to develop an effective heat dissipation method for human skin, flexible electronics, and soft robots due to the desired interface mechanical compliance. However, its low thermal conduction and poor adaptation limit its cooling effects. Inspired by the bone structure, this work reports a simple yet versatile method of fabricating arbitrary-geometry liquid metal skeleton-based elastomer with bicontinuous Gyroid-shaped phases, exhibiting high thermal conductivity (up to 27.1 W/mK) and stretchability (strain limit >600%). Enlightened by the vasodilation principle for blood flow regulation, we also establish a hydraulic-driven conformal morphing strategy for better thermoregulation by modulating the hydraulic pressure of channels to adapt the complicated shape with large surface roughness (even a concave body). The liquid metal active-cooling elastomer, integrated with the flexible thermoelectric device, is demonstrated with various applications in the soft gripper, thermal-energy harvesting, and head thermoregulation.
Collapse
Affiliation(s)
- Dehai Yu
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Zhonghao Wang
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Guidong Chi
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Qiubo Zhang
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Junxian Fu
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Maolin Li
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Chuanke Liu
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Quan Zhou
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Zhen Li
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Du Chen
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Zhenghe Song
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China
| | - Zhizhu He
- Center for Agricultural Flexible Electronics Technology, College of Engineering, China Agricultural University, Beijing, 100083, China.
| |
Collapse
|
52
|
Xia Y, Peng L, Shu L, Wu A, Shao H, Li B, Zhang J, Sui Z, Zhu H, Zhang H. Strong Intervalley Scattering-Induced Renormalization of Electronic and Thermal Transport Properties and Selection Rule Analysis in 2D Tellurium. ACS NANO 2024. [PMID: 38320191 DOI: 10.1021/acsnano.3c12457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
The electron-phonon interaction (EPI) and phonon-phonon interactions are ubiquitous in promising two-dimensional (2D) semiconductors, determining both electronic and thermal transport properties. In this work, based on ab initio calculations, the effects of intervalley scattering on EPI and higher-order four-phonon interactions of α-Te and β-Te are investigated. Through the proposed selection rules for scattering channels and calculations of full electron-phonon scattering rates, we demonstrate that multiple nearly degenerate local valleys/peaks produce more scattering channels, resulting in stronger intervalley scattering over intravalley scattering. The lattice thermal conductivities of α-Te and β-Te are decreased by as much as 10.9% and 30.8% by considering EPI under the carrier concentration of 2 × 1013 cm-2 (n-type) at 300 K compared to those limited by three-phonon scattering, respectively. However, when further considering four-phonon scattering, EPI reduces the lattice thermal conductivities by 2.6% and 19.4% for α-Te and β-Te, respectively. Furthermore, it is revealed that the four-phonon interaction is more dominant in phonon transport for α-Te than that for β-Te due to the presence of an acoustic-optical phonon gap in α-Te. Finally, we demonstrate strong intervalley scattering induces significant renormalization effects from EPI on all the constituent parameters of thermoelectric performance. Our results show the contributions of intervalley scattering to the electronic properties as well as thermal transport properties in band-convergent thermoelectric materials are essential and highlight the potential of monolayer tellurium as a promising candidate for advanced thermoelectric applications.
Collapse
Affiliation(s)
- Yujie Xia
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Lei Peng
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Le Shu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Ao Wu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Hezhu Shao
- College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China
| | - Ben Li
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Juan Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Zhan Sui
- Shanghai Institute of Laser and Plasma, China Academy of Engineering Physics, 197 Chengzhong Road, Jiading, Shanghai 201800, China
| | - Heyuan Zhu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Hao Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
| |
Collapse
|
53
|
Xu Y, Wu B, Hou C, Li Y, Wang H, Zhang Q. High Thermoelectric Performance in Ti 3C 2T x MXene/Sb 2Te 3 Composite Film for Highly Flexible Thermoelectric Devices. GLOBAL CHALLENGES (HOBOKEN, NJ) 2024; 8:2300032. [PMID: 38356680 PMCID: PMC10862162 DOI: 10.1002/gch2.202300032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 05/09/2023] [Indexed: 02/16/2024]
Abstract
Flexible thin-film thermoelectric devices (TEDs) can generate electricity from the heat emitted by the human body, which holds great promise for use in energy supply and biomonitoring technologies. The p-type Sb2Te3 hexagon nanosheets are prepared by the hydrothermal synthesis method and compounded with Ti3C2Tx to make composite films, and the results show that the Ti3C2Tx content has a significant impact on the thermoelectric properties of the composite films. When the Ti3C2Tx content is 2 wt%, the power factor of the composite film reaches ≈59 µW m-1 K-2. Due to the outstanding electrical conductivity, high specific surface area, and excellent flexibility of Ti3C2Tx, the composite films also exhibit excellent thermoelectric and mechanical properties. Moreover, the small addition of Ti3C2Tx has a negligible effect on the phase composition of Sb2Te3 films. The TED consists of seven legs with an output voltage of 45 mV at ΔT = 30 K. The potential of highly flexible thin film TEDs for wearable energy collecting and sensing is great.
Collapse
Affiliation(s)
- Yunhe Xu
- State Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsCollege of Materials Science and EngineeringDonghua UniversityShanghai201620China
| | - Bo Wu
- State Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsCollege of Materials Science and EngineeringDonghua UniversityShanghai201620China
| | - Chengyi Hou
- State Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsCollege of Materials Science and EngineeringDonghua UniversityShanghai201620China
| | - Yaogang Li
- Engineering Research Center of Advanced Glasses Manufacturing Technology Ministry of EducationCollege of Materials Science and EngineeringDonghua UniversityShanghai201620China
| | - Hongzhi Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsCollege of Materials Science and EngineeringDonghua UniversityShanghai201620China
| | - Qinghong Zhang
- Engineering Research Center of Advanced Glasses Manufacturing Technology Ministry of EducationCollege of Materials Science and EngineeringDonghua UniversityShanghai201620China
| |
Collapse
|
54
|
Xu Z, Xia Q, Zhang L, Gao G. A van der Waals p-n heterostructure of GaSe/SnS 2: a high thermoelectric figure of merit and strong anisotropy. NANOSCALE 2024; 16:2513-2521. [PMID: 38205870 DOI: 10.1039/d3nr05284b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
In recent years, van der Waals heterostructures (vdWHs) with controllable and peculiar properties have attracted extensive attention in the fields of electronics, optoelectronics, spintronics and electrochemistry. However, vdWHs with good thermoelectric performance are few due to the complex coupling of thermoelectric coefficients. Here, we employ density functional theory and Boltzmann's transport equation to explore the thermoelectric properties of the p-n vdWH of GaSe/SnS2, which has been experimentally observed to exhibit high performance as an optoelectronic device. We reveal that GaSe/SnS2 possesses strong anisotropy in terms of electronic transport resulting from the anisotropic carrier relaxation time. The longer carrier relaxation time in the y-direction for n-type induces a high power factor of 0.084 W m-1 K-2 at 300 K, while it is only 0.0087 W m-1 K-2) in the x-direction. The strong coupling of low-mid frequency phonon branches and the relatively weak Sn-S bond-induced anharmonicity hinder the phonon transport, which results in the lattice thermal conductivity of GaSe/SnS2 (14.61 and 15.43 W m-1 K-1 along the x- and y-directions at 300 K) being much smaller than the average value of GaSe and SnS2 (43.44 W m-1 K-1 at 300 K). The optimal thermoelectric figure of merit at 700 K for GaSe/SnS2 reaches 2.99, which is significantly higher than those of the constituents of GaSe (0.58) and SnS2 (1.04). The present work highlights the potential thermoelectric applications and the understanding of the thermoelectric transport mechanism for the recently synthesized p-n vdWH of GaSe/SnS2 with a high thermoelectric figure of merit and strong anisotropy.
Collapse
Affiliation(s)
- Zhiyuan Xu
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Qiong Xia
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Long Zhang
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Guoying Gao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| |
Collapse
|
55
|
Zhou Y, Wei Q, Zhang M, Nakajima H, Okazaki T, Yamada T, Hata K. Interface Engineering for High-Performance Thermoelectric Carbon Nanotube Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4199-4211. [PMID: 38113170 DOI: 10.1021/acsami.3c15704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Carbon nanotubes (CNTs) stand out for their exceptional electrical, thermal, and mechanical attributes, making them highly promising materials for cutting-edge, lightweight, and flexible thermoelectric applications. However, realizing the full potential of advanced thermoelectric CNTs requires precise management of their electrical and thermal characteristics. This study, through interface optimization, demonstrates the feasibility of reducing the thermal conductivity while preserving robust electrical conductivity in single-walled CNT films. Our findings reveal that blending two functionalized CNTs offers a versatile method of tailoring the structural and electronic properties of CNT films. Moreover, the modified interface exerts a substantial influence over thermal and electrical transfer, effectively suppressing heat dissipation and facilitating thermoelectric power generation within CNT films. As a result, we have successfully produced both p- and n-type thermoelectric CNTs, attaining impressive power factors of 507 and 171 μW/mK2 at room temperature, respectively. These results provide valuable insights into the fabrication of high-performance thermoelectric CNT films.
Collapse
Affiliation(s)
- Ying Zhou
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 3058565, Japan
| | - Qingshuo Wei
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 3058565, Japan
| | - Minfang Zhang
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 3058565, Japan
| | - Hideaki Nakajima
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 3058565, Japan
| | - Toshiya Okazaki
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 3058565, Japan
| | - Takeo Yamada
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 3058565, Japan
| | - Kenji Hata
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 3058565, Japan
| |
Collapse
|
56
|
Li S, Wang L, Ma D, Jiang Y, Zhang J, Guo K. Construct Amorphous Polymer Interface to Enhance the Thermoelectric Performance of Commercial Bi 0.5Sb 1.5Te 3 Materials. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3586-3592. [PMID: 38199965 DOI: 10.1021/acsami.3c17859] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Interfaces, such as grain boundaries and phase boundaries in thermoelectric (TE) materials, play a crucial role in the carrier/phonon transport. Accurate control of the features of interfaces, including composition, crystalline nature, and thickness may give rise to a promising pathway to break the trade-off between phonon and carrier transport properties, which is essential to design high-performance TE materials. In this work, the amorphous polymer interface (API) layer is introduced to the p-type commercial Bi0.5Sb1.5Te3 (BST) TE material by the liquid-phase sintering process. Due to the larger mismatch in the acoustic impedance or phonon spectra between the amorphous polymer layer and the BST phase, the additional interfacial thermal resistance is introduced, which results in a large decrease in lattice thermal conductivity. It is found that the interfacial thermal resistance at the API is much higher than that of normal grain boundary and hetero interface reported in the literature. Conversely, taking advantage of the strong electron and phonon scattering, a large net get of ZT was achieved. A maximum ZT of ∼1.22 at 350 K was obtained in the BST/polyimide-0.5% sample, which is considerably greater than that of the commercial BST matrix (∼0.99 at 350 K). Furthermore, the optimized BST/polymer sample also exhibited almost 20% enhancement in hardness compared with the pure BST sample. This work has opened a new window for designing high-performance TE composites, which may extend to other material systems.
Collapse
Affiliation(s)
- Shuankui Li
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou 510555, China
| | - Liangliang Wang
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Danning Ma
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Yuanxin Jiang
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
| | - Jiye Zhang
- School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
| | - Kai Guo
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Sino-Singapore Guangzhou Knowledge City, Huangpu District, Guangzhou 510555, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
| |
Collapse
|
57
|
Suryawanshi H, Agrawal B, Kumari N, Dasgupta T. Developing a Multiband Electronic Band Structure Model and Predictive Maps for Bismuth-Rich Mg 3(Sb 1-xBi x) 2 Thermoelectric Materials. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2263-2269. [PMID: 38170558 DOI: 10.1021/acsami.3c15019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
In recent years, bismuth-rich Mg3(Sb1-xBix)2 (x = 0.5-0.8) compositions have generated significant interest due to their excellent thermoelectric (TE) performance near room temperature, making them potential applicants for recovery of low-grade waste heat. The superior performance in these materials is due to its complex electronic band structure (EBS) with presence of multiple near degenerate bands close to the conduction band edge. The position and curvature of these bands strongly depend on the alloy composition, doping amount as well as temperature. Thus, identifying optimal material compositions to get the best TE performance depends on an understanding of the temperature dynamics of EBS and forms the objective of this work. Mg3Sb0.6Bi1.4 (x = 0.7) is chosen for this study due to its reported high near room temperature performance, and compositions with varying doping concentrations (Te used as dopant) have been synthesized. EBS parameters like effective mass and deformation potential of bands, interband separation and band gap values have been estimated using a recently developed refinement approach. Refinement results indicate that the interband separation between conduction bands to be a function of both temperature and doping concentration. Further, thermal conductivity (κ) was estimated for all of the compositions. Utilizing the EBS and κ information, predictive 3D maps indicating the variation in zT (TE figure of merit) with doping concentration and temperature have been generated. The 3D maps reveal an interesting surface topography with a broad peak zT region. This observation explains why these materials have high TE performance and are less sensitive to doping inhomogeneities. Our results provide detailed EBS information and fundamental insights on the TE properties of Mg3Sb0.6Bi1.4. Further, the proposed technique can be utilized to probe other Mg3(Sb1-xBix)2 compositions and TE materials.
Collapse
Affiliation(s)
- Harshada Suryawanshi
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076, India
| | - Bharti Agrawal
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076, India
| | - Nirma Kumari
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076, India
| | - Titas Dasgupta
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400 076, India
| |
Collapse
|
58
|
Wang DZ, Liu WD, Mao Y, Li S, Yin LC, Wu H, Li M, Wang Y, Shi XL, Yang X, Liu Q, Chen ZG. Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of n-Type GeTe-Based Materials. J Am Chem Soc 2024; 146:1681-1689. [PMID: 38178655 DOI: 10.1021/jacs.3c12546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
The coupled relationship between carrier and phonon scattering severely limits the thermoelectric performance of n-type GeTe materials. Here, we provide an efficient strategy to enlarge grains and induce vacancy clusters for decoupling carrier-phonon scattering through the annealing optimization of n-type GeTe-based materials. Specifically, boundary migration is used to enlarge grains by optimizing the annealing time, while vacancy clusters are induced through the aggregation of Ge vacancies during annealing. Such enlarged grains can weaken carrier scattering, while vacancy clusters can strengthen phonon scattering, leading to decoupled carrier-phonon scattering. As a result, a ratio between carrier mobility and lattice thermal conductivity of ∼492.8 cm3 V-1 s-1 W-1 K and a peak ZT of ∼0.4 at 473 K are achieved in Ge0.67Pb0.13Bi0.2Te. This work reveals the critical roles of enlarged grains and induced vacancy clusters in decoupling carrier-phonon scattering and demonstrates the viability of fabricating high-performance n-type GeTe materials via annealing optimization.
Collapse
Affiliation(s)
- De-Zhuang Wang
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Wei-Di Liu
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland 4072, Australia
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Yuanqing Mao
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
- Department of Physics and Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shuai Li
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Liang-Cao Yin
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Hao Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Meng Li
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Yifeng Wang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Xiao-Lei Shi
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Xiaoning Yang
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Qingfeng Liu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Zhi-Gang Chen
- School of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| |
Collapse
|
59
|
Uematsu Y, Ishibe T, Mano T, Ohtake A, Miyazaki HT, Kasaya T, Nakamura Y. Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas system. Nat Commun 2024; 15:322. [PMID: 38228586 DOI: 10.1038/s41467-023-44165-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Accepted: 12/03/2023] [Indexed: 01/18/2024] Open
Abstract
Toward drastic enhancement of thermoelectric power factor, quantum confinement effect proposed by Hicks and Dresselhaus has intrigued a lot of researchers. There has been much effort to increase power factor using step-like density-of-states in two-dimensional electron gas (2DEG) system. Here, we pay attention to another effect caused by confining electrons spatially along one-dimensional direction: multiplied 2DEG effect, where multiple discrete subbands contribute to electrical conduction, resulting in high Seebeck coefficient. The power factor of multiple 2DEG in GaAs reaches the ultrahigh value of ~100 μWcm-1 K-2 at 300 K. We evaluate the enhancement rate defined as power factor of 2DEG divided by that of three-dimensional bulk. The experimental enhancement rate relative to the theoretical one of conventional 2DEG reaches anomalously high (~4) in multiple 2DEG compared with those in various conventional 2DEG systems (~1). This proposed methodology for power factor enhancement opens the next era of thermoelectric research.
Collapse
Affiliation(s)
- Yuto Uematsu
- Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan
| | - Takafumi Ishibe
- Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan
| | - Takaaki Mano
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
| | - Akihiro Ohtake
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
| | - Hideki T Miyazaki
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
| | - Takeshi Kasaya
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
| | - Yoshiaki Nakamura
- Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan.
| |
Collapse
|
60
|
Yu L, Shi XL, Mao Y, Liu WD, Ji Z, Wei S, Zhang Z, Song W, Zheng S, Chen ZG. Simultaneously Boosting Thermoelectric and Mechanical Properties of n-Type Mg 3Sb 1.5Bi 0.5-Based Zintls through Energy-Band and Defect Engineering. ACS NANO 2024; 18:1678-1689. [PMID: 38164927 DOI: 10.1021/acsnano.3c09926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
Incorporating donor doping into Mg3Sb1.5Bi0.5 to achieve n-type conductivity is one of the crucial strategies for performance enhancement. In pursuit of higher thermoelectric performance, we herein report co-doping with Te and Y to optimize the thermoelectric properties of Mg3Sb1.5Bi0.5, achieving a peak ZT exceeding 1.7 at 703 K in Y0.01Mg3.19Sb1.5Bi0.47Te0.03. Guided by first-principles calculations for compositional design, we find that Te-doping shifts the Fermi level into the conduction band, resulting in n-type semiconductor behavior, while Y-doping further shifts the Fermi level into the conduction band and reduces the bandgap, leading to enhanced thermoelectric performance with a power factor as high as >20 μW cm-1 K-2. Additionally, through detailed micro/nanostructure characterizations, we discover that Te and Y co-doping induces dense crystal and lattice defects, including local lattice distortions and strains caused by point defects, and densely distributed grain boundaries between nanocrystalline domains. These defects efficiently scatter phonons of various wavelengths, resulting in a low thermal conductivity of 0.83 W m-1 K-1 and ultimately achieving a high ZT. Furthermore, the dense lattice defects induced by co-doping can further strengthen the mechanical performance, which is crucial for its service in devices. This work provides guidance for the composition and structure design of thermoelectric materials.
Collapse
Affiliation(s)
- Lu Yu
- College of New Energy and Materials, China University of Petroleum, Beijing, 102249, People's Republic of China
| | - Xiao-Lei Shi
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Yuanqing Mao
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4001, Australia
- School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia
- Department of Physics and Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China
| | - Wei-Di Liu
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Zhen Ji
- College of New Energy and Materials, China University of Petroleum, Beijing, 102249, People's Republic of China
| | - Sitong Wei
- College of New Energy and Materials, China University of Petroleum, Beijing, 102249, People's Republic of China
| | - Zipei Zhang
- College of New Energy and Materials, China University of Petroleum, Beijing, 102249, People's Republic of China
| | - Weiyu Song
- College of Science, China University of Petroleum, Beijing, 102249, People's Republic of China
| | - Shuqi Zheng
- College of New Energy and Materials, China University of Petroleum, Beijing, 102249, People's Republic of China
| | - Zhi-Gang Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| |
Collapse
|
61
|
Nguyen HD, Yamada I, Nishimura T, Pang H, Cho H, Tang DM, Kikkawa J, Mitome M, Golberg D, Kimoto K, Mori T, Kawamoto N. STEM in situ thermal wave observations for investigating thermal diffusivity in nanoscale materials and devices. SCIENCE ADVANCES 2024; 10:eadj3825. [PMID: 38215197 PMCID: PMC10786416 DOI: 10.1126/sciadv.adj3825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Accepted: 12/15/2023] [Indexed: 01/14/2024]
Abstract
Practical techniques to identify heat routes at the nanoscale are required for the thermal control of microelectronic, thermoelectric, and photonic devices. Nanoscale thermometry using various approaches has been extensively investigated, yet a reliable method has not been finalized. We developed an original technique using thermal waves induced by a pulsed convergent electron beam in a scanning transmission electron microscopy (STEM) mode at room temperature. By quantifying the relative phase delay at each irradiated position, we demonstrate the heat transport within various samples with a spatial resolution of ~10 nm and a temperature resolution of 0.01 K. Phonon-surface scatterings were quantitatively confirmed due to the suppression of thermal diffusivity. The phonon-grain boundary scatterings and ballistic phonon transport near the pulsed convergent electron beam were also visualized.
Collapse
Affiliation(s)
- Hieu Duy Nguyen
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Isamu Yamada
- Yamada R&D Support Enterprise, 2-8-3 Minamidai, Ishioka, Ibaraki 315-0035, Japan
| | - Toshiyuki Nishimura
- Research Center for Structural Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Hong Pang
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Hyunyong Cho
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Dai-Ming Tang
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jun Kikkawa
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Masanori Mitome
- Research Network and Facility Services Division, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Dmitri Golberg
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Centre for Materials Science, Queensland University of Technology, 2 George, Brisbane, QLD 4000, Australia
- School of Chemistry and Physics, Faculty of Science, Queensland University of Technology, 2 George, Brisbane, QLD 4000, Australia
| | - Koji Kimoto
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takao Mori
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1-1-1, Tsukuba 305-8671, Japan
| | - Naoyuki Kawamoto
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| |
Collapse
|
62
|
Zhao X, Yu T, Zhou B, Ning S, Chen X, Qi N, Chen Z. Extremely Low Lattice Thermal Conductivity and Significantly Enhanced Near-Room-Temperature Thermoelectric Performance in α-Cu 2Se through the Incorporation of Porous Carbon. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1333-1341. [PMID: 38153914 DOI: 10.1021/acsami.3c15884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2023]
Abstract
In this work, a series of Cu2Se/x wt % porous carbon (PC) (x = 0, 0.2, 0.4, 0.6, 0.8, 1) composite materials were synthesized by ball milling and spark plasma sintering (SPS). The highly ordered porous carbon was synthesized by a hydrothermal method using mesoporous silica (SBA-15) as the template. X-ray diffraction results show that the incorporation of porous carbon induces a phase transition of Cu2Se from the β phase to the α phase. Meanwhile, the addition of porous carbon reduces the carrier concentration from 2.7 × 1021 to 2.45 × 1020 cm-3 by 1 order of magnitude. The decrease of the carrier concentration leads to the reduction of electrical conductivity and the increase of the Seebeck coefficient, which results in the enhancement of the power factor. On the other hand, the incorporation of porous carbon into Cu2Se increases the porosity of the composites and also introduces more interfaces between the two materials, which is evidenced by positron annihilation lifetime measurements. Both pores and interfaces greatly enhance phonon scattering, leading to extremely low lattice thermal conductivity. In addition, the decrease of electrical conductivity also causes a sufficient reduction in electronic thermal conductivity. Due to the above synergistic effects, the thermoelectric performance of the Cu2Se/PC composite is significantly enhanced with a maximum ZT value of 0.92 at 403 K in the Cu2Se/1 wt % PC composite, which is close to that of the Bi2Te3-based materials. Our work shows that α-Cu2Se has great potential for near-room-temperature thermoelectric materials.
Collapse
Affiliation(s)
- Xiaodie Zhao
- Department of Physics, Zhejiang University of Science and Technology, Hangzhou 310023, China
| | - Tian Yu
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Bo Zhou
- Department of Radiotherapy, Henan Provincial People's Hospital, People's Hospital of Zhengzhou University, Zhengzhou 450003, Henan, China
| | - Suiting Ning
- School of Science, Hubei University of Technology, Wuhan 430068, China
| | - Xiangbin Chen
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Ning Qi
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Zhiquan Chen
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| |
Collapse
|
63
|
Deng T, Qiu P, Yin T, Li Z, Yang J, Wei T, Shi X. High-Throughput Strategies in the Discovery of Thermoelectric Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2311278. [PMID: 38176395 DOI: 10.1002/adma.202311278] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Revised: 12/13/2023] [Indexed: 01/06/2024]
Abstract
Searching for new high-performance thermoelectric (TE) materials that are economical and environmentally friendly is an urgent task for TE society, but the advancements are greatly limited by the time-consuming and high cost of the traditional trial-and-error method. The significant progress achieved in the computing hardware, efficient computing methods, advance artificial intelligence algorithms, and rapidly growing material data have brought a paradigm shift in the investigation of TE materials. Many electrical and thermal performance descriptors are proposed and efficient high-throughput (HTP) calculation methods are developed with the purpose to quickly screen new potential TE materials from the material databases. Some HTP experiment methods are also developed which can increase the density of information obtained in a single experiment with less time and lower cost. In addition, machine learning (ML) methods are also introduced in thermoelectrics. In this review, the HTP strategies in the discovery of TE materials are systematically summarized. The applications of performance descriptor, HTP calculation, HTP experiment, and ML in the discovery of new TE materials are reviewed. In addition, the challenges and possible directions in future research are also discussed.
Collapse
Affiliation(s)
- Tingting Deng
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Pengfei Qiu
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tingwei Yin
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ze Li
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, Shanghai, 200444, China
| | - Tianran Wei
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
64
|
Imam NG, Elyamny S, Aquilanti G, Pollastri S, Gigli L, Kashyout AEHB. Comprehensive study of nanostructured Bi 2Te 3 thermoelectric materials - insights from synchrotron radiation XRD, XAFS, and XRF techniques. RSC Adv 2024; 14:1875-1887. [PMID: 38192325 PMCID: PMC10772705 DOI: 10.1039/d3ra06731a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 12/21/2023] [Indexed: 01/10/2024] Open
Abstract
In this contribution, a comprehensive study of nanostructured Bi2Te3 (BT) thermoelectric material was performed using a combination of synchrotron radiation-based techniques such as XAFS, and XRF, along with some other laboratory techniques such as XRD, XPS, FESEM, and HRTEM. This study aims to track the change in morphological, compositional, average and local/electronic structures of Bi2Te3 of two different phases; nanostructure (thin film) and nanopowders (NPs). Bi2Te3 nanomaterial was fabricated as pellets using zone melting process in a one step process, while Bi2Te3 thin film was deposited on sodalime glass substrate using a vacuum thermal evaporation technique. Synchrotron radiation-based Bi LIII-edge fluorescence-mode X-ray absorption fine structure (XAFS) technique was performed to probe locally the electronic and fine structures of BT thin film around the Bi atom, while transmission-mode XAFS was used for BT NPs distributed in the PVP matrix. The structural features of the collected Bi LIII XANES spectra of thin film and powder samples of BT are compared with the simulated XANES spectrum of BT calculated using FDMNES code at 5 Å cluster size. Combining different off-line structural characterization techniques (XRD, FESEM, XPS, and HRTEM), along with those of synchrotron radiation-based techniques (XAFS and XRF) is necessary for complementary and supported average crystal, chemical, morphological and local electronic structural analyses for unveiling the variation between Bi2Te3 in the nanostructure/thin film and nanopowder morphology, and then connecting between the structural features and functions of BT in two different morphologies. After that, we measured the Seebeck coefficient and the power factor values for both the BT nanopowder and thin film.
Collapse
Affiliation(s)
- N G Imam
- Experimental Nuclear Physics Department (Solid State Laboratory), Nuclear Research Center (NRC), Egyptian Atomic Energy Authority (EAEA) Cairo 13759 Egypt
- Elettra - Sincrotrone Trieste Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza 34149 Trieste Italy
| | - Shaimaa Elyamny
- Electronic Materials Research Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City, P.O. Box 21934 Alexandria Egypt
| | - Giuliana Aquilanti
- Elettra - Sincrotrone Trieste Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza 34149 Trieste Italy
| | - Simone Pollastri
- Elettra - Sincrotrone Trieste Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza 34149 Trieste Italy
| | - Lara Gigli
- Elettra - Sincrotrone Trieste Strada Statale 14 - km 163,5 in AREA Science Park, Basovizza 34149 Trieste Italy
| | - Abd El-Hady B Kashyout
- Electronic Materials Research Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City, P.O. Box 21934 Alexandria Egypt
| |
Collapse
|
65
|
Zhao Z, Qing Y, Kong L, Xu H, Fan X, Yun J, Zhang L, Wu H. Advancements in Microwave Absorption Motivated by Interdisciplinary Research. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304182. [PMID: 37870274 DOI: 10.1002/adma.202304182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Revised: 09/22/2023] [Indexed: 10/24/2023]
Abstract
Microwave absorption materials (MAMs) are originally developed for military purposes, but have since evolved into versatile materials with promising applications in modern technologies, including household use. Despite significant progress in bench-side research over the past decade, MAMs remain limited in their scope and have yet to be widely adopted. This review explores the history of MAMs from first-generation coatings to second-generation functional absorbers, identifies bottlenecks hindering their maturation. It also presents potential solutions such as exploring broader spatial scales, advanced characterization, introducing liquid media, utilizing novel toolbox (machine learning, ML), and proximity of lab to end-user. Additionally, it meticulously presents compelling applications of MAMs in medicine, mechanics, energy, optics, and sensing, which go beyond absorption efficiency, along with their current development status and prospects. This interdisciplinary research direction differs from previous research which primarily focused on meeting traditional requirements (i.e., thin, lightweight, wide, and strong), and can be defined as the next generation of smart absorbers. Ultimately, the effective utilization of ubiquitous electromagnetic (EM) waves, aided by third-generation MAMs, should be better aligned with future expectations.
Collapse
Affiliation(s)
- Zehao Zhao
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Yuchang Qing
- School of Material Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Luo Kong
- School of Materials Science and Engineering, Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials, Shaanxi University of Science and Technology, Xi'an, 710021, China
| | - Hailong Xu
- School of Material Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Xiaomeng Fan
- School of Material Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Jijun Yun
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Limin Zhang
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Hongjing Wu
- MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary, Northwestern Polytechnical University, Xi'an, 710072, China
| |
Collapse
|
66
|
Geng Y, Li Z, Lin Z, Liu Y, Lai Q, Wu X, Hu L, Liu F, Yu Y, Zhang C. Inhibiting Mg Diffusion and Evaporation by Forming Mg-Rich Reservoir at Grain Boundaries Improves the Thermal Stability of N-Type Mg 3 Sb 2 Thermoelectrics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305670. [PMID: 37658521 DOI: 10.1002/smll.202305670] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2023] [Revised: 08/15/2023] [Indexed: 09/03/2023]
Abstract
N-type Mg3 Sb2 -based thermoelectric materials show great promise in power generation due to their mechanical robustness, low cost of Mg, and high figure of merit (ZT) over a wide range of temperatures. However, their poor thermal stability hinders their practical applications. Here, MgB2 is introduced to improve the thermal stability of n-type Mg3 Sb2 . Enabled by MgB2 decomposition, extra Mg can be released into the matrix for Mg compensation thermodynamically, and secondary phases of Mg─B compounds can kinetically prevent Mg diffusion along grain boundaries. These synergetic effects inhibit the formation of Mg vacancies at elevated temperatures, thereby enhancing the thermal stability of n-type Mg3 Sb2 . Consequently, the Mg3.05 (Sb0.75 Bi0.25 )1.99 Te0.01 (MgB2 )0.03 sample exhibits negligible variation in thermoelectric performance during the 120-hour continuous measurement at 673 K. Moreover, the ZT of n-type Mg3 Sb2 can be maintained by adding MgB2 , reaching a high average ZT of ≈1.1 within 300-723 K. An eight-pair Mg3 Sb2 -GeTe-based thermoelectric device is also fabricated, achieving an energy conversion efficiency of ≈5.7% at a temperature difference of 438 K with good thermal stability. This work paves a new way to enhance the long-term thermal stability of n-type Mg3 Sb2 -based alloys and other thermoelectrics for practical applications.
Collapse
Affiliation(s)
- Yang Geng
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zerong Li
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zehao Lin
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yali Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Qiangwen Lai
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Xuelian Wu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Lipeng Hu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Fusheng Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yuan Yu
- Institute of Physics (IA), RWTH Aachen University, 52056, Aachen, Germany
| | - Chaohua Zhang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| |
Collapse
|
67
|
Yuan X, Shi J, Kang Y, Dong J, Pei Z, Ji X. Piezoelectricity, Pyroelectricity, and Ferroelectricity in Biomaterials and Biomedical Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308726. [PMID: 37842855 DOI: 10.1002/adma.202308726] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2023] [Revised: 10/12/2023] [Indexed: 10/17/2023]
Abstract
Piezoelectric, pyroelectric, and ferroelectric materials are considered unique biomedical materials due to their dielectric crystals and asymmetric centers that allow them to directly convert various primary forms of energy in the environment, such as sunlight, mechanical energy, and thermal energy, into secondary energy, such as electricity and chemical energy. These materials possess exceptional energy conversion ability and excellent catalytic properties, which have led to their widespread usage within biomedical fields. Numerous biomedical applications have demonstrated great potential with these materials, including disease treatment, biosensors, and tissue engineering. For example, piezoelectric materials are used to stimulate cell growth in bone regeneration, while pyroelectric materials are applied in skin cancer detection and imaging. Ferroelectric materials have even found use in neural implants that record and stimulate electrical activity in the brain. This paper reviews the relationship between ferroelectric, piezoelectric, and pyroelectric effects and the fundamental principles of different catalytic reactions. It also highlights the preparation methods of these three materials and the significant progress made in their biomedical applications. The review concludes by presenting key challenges and future prospects for efficient catalysts based on piezoelectric, pyroelectric, and ferroelectric nanomaterials for biomedical applications.
Collapse
Affiliation(s)
- Xue Yuan
- Academy of Medical Engineering and Translational Medicine, Medical College, Tianjin University, Tianjin, 300072, China
| | - Jiacheng Shi
- Academy of Medical Engineering and Translational Medicine, Medical College, Tianjin University, Tianjin, 300072, China
| | - Yong Kang
- Academy of Medical Engineering and Translational Medicine, Medical College, Tianjin University, Tianjin, 300072, China
| | - Jinrui Dong
- Academy of Medical Engineering and Translational Medicine, Medical College, Tianjin University, Tianjin, 300072, China
| | - Zhengcun Pei
- Academy of Medical Engineering and Translational Medicine, Medical College, Tianjin University, Tianjin, 300072, China
| | - Xiaoyuan Ji
- Academy of Medical Engineering and Translational Medicine, Medical College, Tianjin University, Tianjin, 300072, China
- Shandong Province Key Laboratory of Detection Technology for Tumor Makers, Medical College, Linyi University, Linyi, 276000, China
| |
Collapse
|
68
|
Guo M, Liu M, Zhu J, Zhu Y, Guo F, Cai W, Zhang Y, Zhang Q, Sui J. Mechanism of Thermoelectric Performance Enhancement in CaMg 2 Bi 2 -Based Materials with Different Cation Site Doping. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306251. [PMID: 37691045 DOI: 10.1002/smll.202306251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 08/29/2023] [Indexed: 09/12/2023]
Abstract
Chemical bonds determine electron and phonon transport in solids. Tailoring chemical bonding in thermoelectric materials causes desirable or compromise thermoelectric transport properties. In this work, taking an example of CaMg2 Bi2 with covalent and ionic bonds, density functional theory calculations uncover that element Zn, respectively, replacing Ca and Mg sites cause the weakness of ionic and covalent bonding. Electrically, Zn doping at both Ca and Mg sites increases carrier concentration, while the former leads to higher carrier concentration than that of the latter because of its lower vacancy formation energy. Both doping types increase density-of-state effective mass but their mechanisms are different. The Zn doping Ca site induces resonance level in valence band and Zn doping Mg site promotes orbital alignment. Thermally, point defect and the change of phonon dispersion introduced by doping result in pronounced reduction of lattice thermal conductivity. Finally, combining with the further increase of carrier concentration caused by Na doping and the modulation of band structure and the decrease of lattice thermal conductivity caused by Ba doping, a high figure-of-merit ZT of 1.1 at 823 K in Zn doping Ca sample is realized, which is competitive in 1-2-2 Zintl phase thermoelectric systems.
Collapse
Affiliation(s)
- Muchun Guo
- School of Materials Science and Engineering, Xihua University, Chengdu, 610039, China
| | - Ming Liu
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Jianbo Zhu
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Yuke Zhu
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Fengkai Guo
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Wei Cai
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Yongsheng Zhang
- Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu, 273165, China
| | - QinYong Zhang
- School of Materials Science and Engineering, Xihua University, Chengdu, 610039, China
| | - Jiehe Sui
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| |
Collapse
|
69
|
Peng Q, Ma X, Yang X, Yuan X, Chen XJ. Thermoelectric Properties of Mg 3(Bi,Sb) 2 under Finite Temperatures and Pressures: A First-Principles Study. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 14:84. [PMID: 38202539 PMCID: PMC10780500 DOI: 10.3390/nano14010084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 12/14/2023] [Accepted: 12/21/2023] [Indexed: 01/12/2024]
Abstract
Mg3Bi2-vSbv (0 ≤ v ≤ 2) is a class of promising thermoelectric materials that have a high thermoelectric performance around room temperatures, whereas their thermoelectric properties under pressures and temperatures are still illusive. In this study, we examined the influence of pressure, temperature, and carrier concentration on the thermoelectric properties of Mg3Bi2-vSbv using first-principle calculations accompanied with Boltzmann transport equations method. There is a decrease in the lattice thermal conductivity of Mg3Sb2 (i.e., v = 2) with increasing pressure. For a general Mg3Bi2-vSbv system, power factors are more effectively improved by n-type doping where electrons are the primary carriers over holes in n-type doping, and can be further enhanced by applied pressure. The figure of merit (zT) exhibits a positive correlation with temperature. A high zT value of 1.53 can be achieved by synergistically tuning the temperature, pressure, and carrier concentration in Mg3Sb2. This study offers valuable insights into the tailoring and optimization of the thermoelectric properties of Mg3Bi2-vSbv.
Collapse
Affiliation(s)
- Qing Peng
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China;
- The State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (X.M.); (X.Y.)
- Beijing MaiGao MatCloud Technology Co., Ltd., Beijing 100190, China
- Guangdong Aerospace Research Academy, Guangzhou 511458, China
| | - Xinjie Ma
- The State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (X.M.); (X.Y.)
- Beijing MaiGao MatCloud Technology Co., Ltd., Beijing 100190, China
| | - Xiaoyu Yang
- Beijing MaiGao MatCloud Technology Co., Ltd., Beijing 100190, China
- Computer Network Information Center, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaoze Yuan
- The State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (X.M.); (X.Y.)
| | - Xiao-Jia Chen
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China;
| |
Collapse
|
70
|
Wan S, Xiao S, Li M, Wang X, Lim KH, Hong M, Ibáñez M, Cabot A, Liu Y. Band Engineering Through Pb-Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu 3 SbSe 4. SMALL METHODS 2023:e2301377. [PMID: 38152986 DOI: 10.1002/smtd.202301377] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 11/29/2023] [Indexed: 12/29/2023]
Abstract
Developing cost-effective and high-performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu3 SbSe4 is a promising p-type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution-based approach is developed to synthesize high-quality Cu3 SbSe4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit (zTmax ) ≈ 0.85 at 653 K is obtained in Cu3 Sb0.97 Pb0.03 Se4 . This represents a 1.6-fold increase compared to the undoped sample and exceeds most doped Cu3 SbSe4 -based materials produced by solid-state, demonstrating advantages of versatility and cost-effectiveness using a solution-based technology.
Collapse
Affiliation(s)
- Shanhong Wan
- Anhui Province Key Laboratory of Advanced Catalytic Materials and Reaction Engineering School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Shanshan Xiao
- Anhui Province Key Laboratory of Advanced Catalytic Materials and Reaction Engineering School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Mingquan Li
- Anhui Province Key Laboratory of Advanced Catalytic Materials and Reaction Engineering School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Xin Wang
- Center of Analysis and Test, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Khak Ho Lim
- Institute of Zhejiang University-Quzhou, 99 Zheda Rd, Quzhou, 324000, P. R. China
| | - Min Hong
- Centre for Future Materials, and School of Engineering, University of Southern Queensland, Springfield Central, Queensland, 4300, Australia
| | - Maria Ibáñez
- IST Austria, Am Campus 1, Klosterneuburg, 3400, Austria
| | - Andreu Cabot
- Catalonia Institute for Energy Research-IREC, Sant Adrià de Besòs, Barcelona, 08930, Spain
- Institució Catalana de Recerca i Estudis Avançats - ICREA, Barcelona, 08010, Spain
| | - Yu Liu
- Anhui Province Key Laboratory of Advanced Catalytic Materials and Reaction Engineering School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, 230009, P. R. China
| |
Collapse
|
71
|
Xiao C, Zhai P, Fang K, Xia Z, Duan B, Feng X, Li G, Zhou L, Huang B, Guo Z, Zhang Q. Strain-Induced Defect Evolution for the Construction of Porous Cu 2-xSe with Enhanced Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58529-58538. [PMID: 38053306 DOI: 10.1021/acsami.3c14996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Superionic Cu2-xSe, with disordered and even liquid-like Cu ions, has been extensively studied as a high efficiency thermoelectric material. However, the relationship between lattice stability and microstructure evolution in Cu2-xSe under strain, which is crucial for its application, has seldom been explored in previous research. In this study, we investigate the impacts of hydrostatic compression strain on the microstructural evolution and, consequently, its implications for thermoelectric performance. Molecular dynamics (MD) simulations show that high hydrostatic compression strain could induce local diffusion of Cu ions and Se twin evolution, resulting in the breaking and reforming of Cu-Se dynamic bonds and the unstable Se sublattice. The subsequent annealing process of the destabilized structure promoted Se evaporation from the sublattice and resulted in lotus-seedpod-like pores. The reduced sound velocity and intensified phonon scattering, due to pores, lead to a reduction in the lattice thermal conductivity from 0.44 W m-1 K-1 to 0.24 W m-1 K-1 at 800 K, a decrease of approximately 45%, in the porous Cu1.92Se sample. These findings reveal the relationship between stability and defect evolution in Cu2-xSe under high hydrostatic compression, offering a straightforward strategy of defect engineering for designing unique microstructures by leveraging the instability in superionic conductor materials.
Collapse
Affiliation(s)
- Chenyang Xiao
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China
| | - Pengcheng Zhai
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Kailiang Fang
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China
| | - Zhuoming Xia
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China
| | - Bo Duan
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China
| | - Xiaobin Feng
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China
| | - Guodong Li
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Ling Zhou
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China
| | - Ben Huang
- Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, Hubei University, Wuhan 430062, China
| | - Zhiguang Guo
- Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, Hubei University, Wuhan 430062, China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| |
Collapse
|
72
|
Knura R, Maksymuk M, Parashchuk T, Wojciechowski KT. Achieving high thermoelectric conversion efficiency in Bi 2Te 3-based stepwise legs through bandgap tuning and chemical potential engineering. Dalton Trans 2023; 53:123-135. [PMID: 38050856 DOI: 10.1039/d3dt03061j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
In this study, we show that the energy conversion efficiency in thermoelectric (TE) devices can be effectively improved through simultaneous optimization of carrier concentration, bandgap tuning, and fabrication of stepwise legs. n- and p-type Bi2Te3-based materials were selected as examples for testing the proposed approach. At first, the Boltzmann transport theory was employed to predict the optimal temperature-dependent carrier concentration for high thermoelectric performance over a broad temperature range. Then, the synthesized n-Bi2Te3-xSex and p-Bi2-xSbxTe3 solid solutions were tested to evaluate their suitability for fabricating the stepwise thermoelectric legs. The output energy characteristics of the designed TE devices were estimated using numerical modeling employing the finite element method. The theoretical simulation revealed an improvement in the conversion efficiency between the best homogeneous and stepwise TE legs from 8.8% to 10.1% and from 9.9% to 10.8% in p-type and n-type legs, respectively, which is much higher than the efficiency of the industrial thermoelectric modules (3-6%). The measured conversion efficiency of the fabricated n- and p-type stepwise legs reached very high values of 9.3% and 9.0%, respectively, at the relatively small temperature gradient of 375 K. This work suggests carrier concentration and bandgap engineering accompanied by the stepwise leg approach as powerful methods for achieving high energy conversion efficiency in thermoelectric converters.
Collapse
Affiliation(s)
- Rafal Knura
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
- Department of Science, Graduate School of Science and Technology, Kumamoto University, 2 Chome-39-1 Kurokami, Chuo Ward, 860-8555 Kumamoto, Japan
| | - Mykola Maksymuk
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
| | - Taras Parashchuk
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
| | - Krzysztof T Wojciechowski
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
| |
Collapse
|
73
|
Zhang T. Advanced Nanoscale Materials for Thermoelectric Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:3165. [PMID: 38133062 PMCID: PMC10746105 DOI: 10.3390/nano13243165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Accepted: 12/13/2023] [Indexed: 12/23/2023]
Abstract
Recently, there has been growing academic interest in researching thermoelectric materials that exhibit energy conversion capability between thermal energy and electricity, providing solutions to energy crises and environmental pollution [...].
Collapse
Affiliation(s)
- Ting Zhang
- Nanjing Institute of Future Energy System, Nanjing 211135, China;
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Innovation Academy for Light-Duty Gas Turbine, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Nanjing 211135, China
| |
Collapse
|
74
|
Alsaqer M, Daaoub AH, Sangtarash S, Sadeghi H. Large Mechanosensitive Thermoelectric Enhancement in Metallo-Organic Magnetic Molecules. NANO LETTERS 2023; 23:10719-10724. [PMID: 37988562 PMCID: PMC10722535 DOI: 10.1021/acs.nanolett.3c02569] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 11/15/2023] [Accepted: 11/15/2023] [Indexed: 11/23/2023]
Abstract
Organic materials are promising candidates for thermoelectric cooling and energy harvesting at room temperature. However, their electrical conductance (G) and Seebeck coefficient (S) need to be improved to make them technologically competitive. Therefore, radically new strategies need to be developed to tune their thermoelectric properties. Here, we demonstrate that G and S can be tuned mechanically in paramagnetic metallocenes, and their thermoelectric properties can be significantly enhanced by the application of mechanical forces. With a 2% junction compression, the full thermoelectric figure of merit is enhanced by more than 200 times. We demonstrate that this is because spin transport resonances in paramagnetic metallocenes are strongly sensitive to the interaction between organic ligands and the metal center, which is not the case in their diamagnetic analogue. These results open a new avenue for the development of organic thermoelectric materials for cooling future quantum computers and generating electricity from low-grade energy sources.
Collapse
Affiliation(s)
- Munirah Alsaqer
- Device Modelling Group, School
of Engineering, University of Warwick, CV4 7AL Coventry, United Kingdom
| | - Abdalghani H.S. Daaoub
- Device Modelling Group, School
of Engineering, University of Warwick, CV4 7AL Coventry, United Kingdom
| | - Sara Sangtarash
- Device Modelling Group, School
of Engineering, University of Warwick, CV4 7AL Coventry, United Kingdom
| | - Hatef Sadeghi
- Device Modelling Group, School
of Engineering, University of Warwick, CV4 7AL Coventry, United Kingdom
| |
Collapse
|
75
|
Das S, Mondal BP, Ranjan P, Datta A. High-Performance Paper-Based Thermoelectric Generator from Cu 2SnS 3 Nanocubes and Bulk-Traced Bismuth. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56022-56033. [PMID: 38010192 DOI: 10.1021/acsami.3c13576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Flexible paper-based thermoelectric generators (PTEGs) have drawn significant interest in recent years due to their various advantages such as flexibility, adaptability, environment friendliness, low cost, and easy fabrication process. However, the reported PTEG's output performance still lags behind the performance of other flexible devices as it is not so easy to obtain a compact film on a paper-based substrate with desirable power output with the standard thermoelectric (TE) materials that have been previously utilized. In this direction, Cu2SnS3 (CTS), an earth-abundant, ternary sulfide, can be a good choice p-type semiconductor, when paired with a suitable n-type TE material. In this article, CTS nanocubes are synthesized via a simple hot injection method and a thick film device on emery paper was prepared and optimized. Furthermore, a flexible, 20-pair PTEG is fabricated with p-type CTS legs and traced and pressed n-type bismuth legs assembled using Kapton tape that produced a significantly high output power of 2.18 μW (output power density ∼0.85 nW cm-2 K-1) for a temperature gradient of ΔT = 80 K. The TE properties are also supported by finite element simulation. The bending test conducted for the PTEG suggests device stability for up to 800 cycles with <0.05% change in the internal resistance. A proof-of-concept field-based demonstration for energy harvesting from waste heat of a motorbike exhaust is shown recovering an output power of ∼42 nW for ΔT = 20 K, corroborating the experimental and theoretical results.
Collapse
Affiliation(s)
- Surajit Das
- School of Applied and Interdisciplinary Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
| | - Bhargab P Mondal
- School of Applied and Interdisciplinary Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
| | - Priya Ranjan
- School of Applied and Interdisciplinary Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
| | - Anuja Datta
- School of Applied and Interdisciplinary Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
- Technical Research Center, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
| |
Collapse
|
76
|
Lee CY, Lin YT, Hong SH, Wang CH, Jeng US, Tung SH, Liu CL. Mixed Ionic-Electronic Conducting Hydrogels with Carboxylated Carbon Nanotubes for High Performance Wearable Thermoelectric Harvesters. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56072-56083. [PMID: 37982689 DOI: 10.1021/acsami.3c09934] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
Mixed ionic-electronic conducting (MIEC) thermoelectric (TE) materials offer higher ionic conductivity and ionic Seebeck coefficient compared to those of purely ionic-conducting TE materials. These characteristics make them suitable for direct use in thermoelectric generators (TEGs) as the charge carriers can be effectively transported from one electrode to the other via the external circuit. In the present study, MIEC hydrogels are fabricated via the chemical cross-linking of polyacrylamide (PAAM) and polydopamine (PDA) to form a double network. In addition, electrically conducting carboxylated carbon nanotubes (CNT-COOH) are dispersed evenly within the hydrogel via sonication and interaction with the PDA. Moreover, the electrical properties of the hydrogel are further improved via the in situ polymerization of polyaniline (PANI). The presence of CNT-COOH facilitates the ionic conductivity and enhances the ionic Seebeck coefficient via ionic-electronic interactions between sodium ions and carboxyl groups on CNT-COOH, which can be observed in X-ray photoelectron spectroscopy results, thereby promoting the charge transport properties. As a result, the optimum device exhibits a remarkable ionic conductivity of 175.3 mS cm-1 and a high ionic Seebeck coefficient of 18.6 mV K-1, giving an ionic power factor (PFi) of 6.06 mW m-1 K-2 with a correspondingly impressive ionic figure of merit (ZTi) of 2.65. These values represent significant achievements within the field of gel-state organic TE materials. Finally, a wearable module is fabricated by embedding the PAAM/PDA/CNT-COOH/PANI hydrogel into a poly(dimethylsiloxane) mold. This configuration yields a high power density of 171.4 mW m-2, thus highlighting the considerable potential for manufacturing TEGs for wearable devices capable of harnessing waste heat.
Collapse
Affiliation(s)
- Chia-Yu Lee
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yen-Ting Lin
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Shao-Huan Hong
- Department of Chemical and Materials Engineering, National Central University, Taoyuan 32001, Taiwan
| | - Chia-Hsin Wang
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - U-Ser Jeng
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Shih-Huang Tung
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Cheng-Liang Liu
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| |
Collapse
|
77
|
Li Z, Zhou Z, Zhang J, Zhu C, Qiu P, Deng T, Xu F, Chen L, Shi X. Intrinsically Low Thermal Conductivity in a Novel Cu-S Modified ZrS 2 Compound with Asymmetric Bonding. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304718. [PMID: 37621034 DOI: 10.1002/smll.202304718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 07/25/2023] [Indexed: 08/26/2023]
Abstract
Materials with low thermal conductivity have received significant attention across various research fields, including thermal insulation materials, thermal barrier coatings, and thermoelectric materials. Exploring novel materials with intrinsically low thermal conductivity and investigating their phonon transport properties, chemical bonding, and atomic coordination are crucial. In this study, a novel ternary sulfide is successfully discovered, Cu2 ZrS3 , which is achieved by introducing copper ions into both the interlayer and intralayer of ZrS2 . The resulting structure encompasses various coordination forms within each layer, such as [CuS4 ], [ZrS6 ], and [CuS3 ], leading to pronounced phonon anharmonicity induced by the asymmetric bonding of tri-coordinated Cu atoms within the [ZrS6 ] layer. As a result, Cu2 ZrS3 exhibits intrinsically low lattice thermal conductivity (κL ) of about 0.83 W m-1 K-1 at 300 K and 0.35 W m-1 K-1 at 683 K, which are in the exceptionally low level among sulfides. In comparison to the conventional approach of inserting guests between layers, the substitution of atoms within layers provides a novel and effective strategy for designing low κL materials in transition metal dichalcogenides (TMDCs).
Collapse
Affiliation(s)
- Zhi Li
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhengyang Zhou
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Beijing National Laboratory for Molecular Sciences, Beijing, 100190, China
| | - Jiawei Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Chenxi Zhu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Pengfei Qiu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Tingting Deng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Fangfang Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Lidong Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
78
|
Xue Y, Wang Q, Gao Z, Qian X, Wang J, Yan G, Chen M, Zhao LD, Wang SF, Li Z. Constructing quasi-layered and self-hole doped SnSe oriented films to achieve excellent thermoelectric power factor and output power density. Sci Bull (Beijing) 2023; 68:2769-2778. [PMID: 37806799 DOI: 10.1016/j.scib.2023.09.037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2023] [Revised: 08/22/2023] [Accepted: 09/22/2023] [Indexed: 10/10/2023]
Abstract
Thermoelectric (TE) technology can achieve the mutual conversion between electric energy and waste heat, and it has exhibited great prospects in multifunctional energy applications to alleviate the energy crisis. In the recent decade, SnSe has been explored widely because of its potentially high energy harvesting efficiency, green nature, and low cost. However, the relatively poor power factor (PF) derived from the intrinsic low carrier concentration (∼1017 cm-3) limits the output power density of the stoichiometric SnSe devices. Therefore, the advancement of novel optimization strategies for controlling carrier concentration is of utmost importance. Besides, compared with 3D bulks, 2D thin films are more compatible with modern semiconductor technology and have unique advantages in the construction and application of TE micro- and nano-devices. In this study, post-selenization technology were applied to increase the carrier concentration of the a-axis oriented SnSe epitaxial films utilizing the charge transfer and self-hole doped effects. The quasi-layered and self-hole doped films exhibited a high power factor of ∼5.9 µW cm-1 K-2 at 600 K along the in-plane direction when the carrier concentration is enhanced to ∼1018 cm-3 by increasing the selenization time to ∼20 min. The TE generator composed of four P-type film legs demonstrated the ultrahigh maximum power density of ∼83, ∼838 µW cm-2 at the temperature difference of ∼50 and ∼90 K, respectively. Post-selenization can effectively optimize the carrier concentration of SnSe-based materials, which is also feasible to other anion deficient TE films.
Collapse
Affiliation(s)
- Yuli Xue
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Qing Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Zhi Gao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Xin Qian
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Jianglong Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Guoying Yan
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Mingjing Chen
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Shu-Fang Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China; Engineering Research Center of Zero-Carbon Energy Buildings and Measurement Techniques, Ministry of Education, Hebei University, Baoding 071002, China.
| | - Zhiliang Li
- Hebei Key Laboratory of Optic-Electronic Information and Materials, Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China; Engineering Research Center of Zero-Carbon Energy Buildings and Measurement Techniques, Ministry of Education, Hebei University, Baoding 071002, China.
| |
Collapse
|
79
|
Xu B, Tian Y. Breaking a bottleneck for thermoelectric generators. Science 2023; 382:882-883. [PMID: 37995246 DOI: 10.1126/science.adl2157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2023]
Abstract
A phase diagram-based screen identifies optimal interface materials for devices that convert heat into electricity.
Collapse
Affiliation(s)
- Bo Xu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Yongjun Tian
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| |
Collapse
|
80
|
Xie L, Yin L, Yu Y, Peng G, Song S, Ying P, Cai S, Sun Y, Shi W, Wu H, Qu N, Guo F, Cai W, Wu H, Zhang Q, Nielsch K, Ren Z, Liu Z, Sui J. Screening strategy for developing thermoelectric interface materials. Science 2023; 382:921-928. [PMID: 37995213 DOI: 10.1126/science.adg8392] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Accepted: 09/25/2023] [Indexed: 11/25/2023]
Abstract
Thermoelectric interface materials (TEiMs) are essential to the development of thermoelectric generators. Common TEiMs use pure metals or binary alloys but have performance stability issues. Conventional selection of TEiMs generally relies on trial-and-error experimentation. We developed a TEiM screening strategy that is based on phase diagram predictions by density functional theory calculations. By combining the phase diagram with electrical resistivity and melting points of potential reaction products, we discovered that the semimetal MgCuSb is a reliable TEiM for high-performance MgAgSb. The MgCuSb/MgAgSb junction exhibits low interfacial contact resistivity (ρc <1 microhm square centimeter) even after annealing at 553 kelvin for 16 days. The fabricated two-pair MgAgSb/Mg3.2Bi1.5Sb0.5 module demonstrated a high conversion efficiency of 9.25% under a 300 kelvin temperature gradient. We performed an international round-robin testing of module performance to confirm the measurement reliability. The strategy can be applied to other thermoelectric materials, filling a vital gap in the development of thermoelectric modules.
Collapse
Affiliation(s)
- Liangjun Xie
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| | - Li Yin
- School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology, Shenzhen 518055, China
| | - Yuan Yu
- Institute of Physics, RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Guyang Peng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shaowei Song
- Department of Physics and the Texas Center for Superconductivity at the University of Houston, University of Houston, Houston, TX 77204, USA
| | - Pingjun Ying
- Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
| | - Songting Cai
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Yuxin Sun
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| | - Wenjing Shi
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| | - Hao Wu
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| | - Nuo Qu
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| | - Fengkai Guo
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| | - Wei Cai
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| | - Haijun Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Qian Zhang
- School of Materials Science and Engineering, and Institute of Materials Genome and Big Data, Harbin Institute of Technology, Shenzhen 518055, China
| | - Kornelius Nielsch
- Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
| | - Zhifeng Ren
- Department of Physics and the Texas Center for Superconductivity at the University of Houston, University of Houston, Houston, TX 77204, USA
| | - Zihang Liu
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| | - Jiehe Sui
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
| |
Collapse
|
81
|
Bhui A, Das S, Arora R, Bhat U, Dutta P, Ghosh T, Pathak R, Datta R, Waghmare UV, Biswas K. Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe 2. J Am Chem Soc 2023; 145:25392-25400. [PMID: 37942795 DOI: 10.1021/jacs.3c09643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Defect engineering, achieved by precise tuning of the atomic disorder within crystalline solids, forms a cornerstone of structural chemistry. This nuanced approach holds the potential to significantly augment thermoelectric performance by synergistically manipulating the interplay between the charge carrier and lattice dynamics. Here, the current study presents a distinctive investigation wherein the introduction of Hg doping into AgSbTe2 serves to partially curtail structural disorder. This strategic maneuver mitigates potential fluctuations originating from pronounced charge and size disparities between Ag+ and Sb3+, positioned in octahedral sites within the rock salt structure. Hg doping significantly improves the phase stability of AgSbTe2 by restricting the congenital emergence of the Ag2Te minor secondary phase and promotes partial atomic ordering in the cation sublattice. Reduction in atomic disorder coalesced with a complementary modification of electronic structure by Hg doping results in increased carrier mobility. The formation of nanoscale superstructure with sizes (2-5 nm) of the order of phonon mean free path in AgSbTe2 is further promoted by reduced partial disorder, causes enhanced scattering of heat-carrying phonons, and results in a glass-like ultralow lattice thermal conductivity (∼0.32 W m-1 K-1 at 297 K). Cumulatively, the multifaceted influence of Hg doping, in conjunction with the consequential reduction in disorder, allows achieving a high thermoelectric figure-of-merit, zT, of ∼2.4 at ∼570 K. This result defies conventional paradigms that prioritize increased disorder for optimizing zT.
Collapse
Affiliation(s)
- Animesh Bhui
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Subarna Das
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Raagya Arora
- Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Usha Bhat
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Prabir Dutta
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Tanmoy Ghosh
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Riddhimoy Pathak
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Ranjan Datta
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Umesh V Waghmare
- Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| |
Collapse
|
82
|
Song K, Wang S, Duan Y, Ling X, Schiavone P. Effect of Inevitable Heat Leap on the Conversion Efficiency of Thermoelectric Generators. PHYSICAL REVIEW LETTERS 2023; 131:207001. [PMID: 38039481 DOI: 10.1103/physrevlett.131.207001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Accepted: 10/19/2023] [Indexed: 12/03/2023]
Abstract
Discrepancies between experimental and theoretical results in the study of thermoelectric generators (TEGs) have been a major long-standing problem in thermoelectric technology. In this Letter, we report that, besides interfacial resistance, the inevitable heat leap caused by the Peltier effect is the main factor affecting the conversion efficiency of TEGs. In fact, the heat leap is proven to have an impact of approximately 10% on the conversion efficiency of common TEGs. In addition, we enhance the formula for maximum conversion efficiency with heat leap from the classical expression to allow for the prediction of the performance of advanced materials in TEGs. For the first time, the experimental data from conversion efficiency corresponds exactly to that obtained theoretically by considering both the heat leap and interfacial resistivity.
Collapse
Affiliation(s)
- Kun Song
- School of Mechanical and Power Engineering, Nanjing Tech University, 30 Puzhu South Road, Nanjing Jiangsu, People's Republic of China
| | - Shuang Wang
- School of Physical and Mathematical Sciences, Nanjing Tech University, 30 Puzhu South Road, Nanjing Jiangsu, People's Republic of China
| | - Yiwei Duan
- School of Mechanical and Power Engineering, Nanjing Tech University, 30 Puzhu South Road, Nanjing Jiangsu, People's Republic of China
| | - Xiang Ling
- School of Mechanical and Power Engineering, Nanjing Tech University, 30 Puzhu South Road, Nanjing Jiangsu, People's Republic of China
| | - Peter Schiavone
- Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta, Canada
| |
Collapse
|
83
|
Park D, Kim M, Kim J. Highly porous thermoelectric composites with high figure of merit and low thermal conductivity from solution-synthesized porous Bi 2Si 2Te 6 nanosheets. Dalton Trans 2023; 52:16398-16405. [PMID: 37870571 DOI: 10.1039/d3dt02544f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2023]
Abstract
Layer-structured Bi2Si2Te6 has garnered significant attention in the field of thermoelectrics due to its exceptional thermoelectric properties and unique structural characteristics. Enhancing the transport properties of composites by manipulating the thermal and electrical properties of materials through the fabrication of porous nanostructured materials has emerged as a promising strategy. This paper presents a study on enhancing the thermoelectric (TE) properties of Bi2Si2Te6 nanosheets (BST NSs) through nanostructuring and the fabrication of porous BST NSs (p-BST). The process involves Li intercalation and exfoliation to obtain BST NSs, followed by the creation of p-BST composites by introducing nanosized pores onto the surface of the NSs using high-power sonification for various durations. The incorporation of the porous structure effectively increases phonon scattering, leading to a decrease in the lattice thermal conductivity (κl) of the composite. The p-BST(2) composite demonstrates significantly low κ and enhanced thermoelectric figure of merit (ZT) values (∼0.63 W m-1 K-1 and ∼0.083) at room temperature. These results highlight the efficacy of porous structure preparation as a promising strategy for enhancing the thermoelectric performance of chalcogenide-based composites, offering potential solutions to environmental degradation and energy shortages.
Collapse
Affiliation(s)
- Dabin Park
- School of Chemical Engineering & Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Minsu Kim
- School of Chemical Engineering & Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jooheon Kim
- School of Chemical Engineering & Materials Science, Chung-Ang University, Seoul 06974, Republic of Korea
- Department of Advance Materials Engineering, Chung-Ang University, Anseong 17546, Republic of Korea
- Department of Intelligent Energy and Industry, Graduate School, Chung-Ang University, Seoul 06974, Republic of Korea.
| |
Collapse
|
84
|
Yao W, Zhang Y, Lyu T, Huang W, Huang N, Li X, Zhang C, Liu F, Wuttig M, Yu Y, Hong M, Hu L. Two-step phase manipulation by tailoring chemical bonds results in high-performance GeSe thermoelectrics. Innovation (N Y) 2023; 4:100522. [PMID: 37915362 PMCID: PMC10616397 DOI: 10.1016/j.xinn.2023.100522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Accepted: 10/03/2023] [Indexed: 11/03/2023] Open
Abstract
In thermoelectrics, phase engineering serves a crucial function in determining the power factor by affecting the band degeneracy. However, for low-symmetry compounds, the mainstream one-step phase manipulation strategy, depending solely on the valley or orbital degeneracy, is inadequate to attain a high density-of-states effective mass and exceptional zT. Here, we employ a distinctive two-step phase manipulation strategy through stepwise tailoring chemical bonds in GeSe. Initially, we amplify the valley degeneracy via CdTe alloying, which elevates the crystal symmetry from a covalently bonded orthorhombic to a metavalently bonded rhombohedral phase by significantly suppressing the Peierls distortion. Subsequently, we incorporate Pb to trigger the convergence of multivalence bands and further enhance the density-of-states effective mass by moderately restraining the Peierls distortion. Additionally, the atypical metavalent bonding in rhombohedral GeSe enables a high Ge vacancy concentration and a small band effective mass, leading to increased carrier concentration and mobility. This weak chemical bond along with strong lattice anharmonicity also reduces lattice thermal conductivity. Consequently, this unique property ensemble contributes to an outstanding zT of 0.9 at 773 K for Ge0.80Pb0.20Se(CdTe)0.25. This work underscores the pivotal role of the two-step phase manipulation by stepwise tailoring of chemical bonds in improving the thermoelectric performance of p-bonded chalcogenides.
Collapse
Affiliation(s)
- Wenqing Yao
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yihua Zhang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tu Lyu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Weibo Huang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Nuoxian Huang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Xiang Li
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Chaohua Zhang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Fusheng Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Matthias Wuttig
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
- PGI 10 (Green IT), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Yuan Yu
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Min Hong
- Center for Future Materials and School of Engineering, University of Southern Queensland, Springfield Central, QLD 4300, Australia
| | - Lipeng Hu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| |
Collapse
|
85
|
Dong Y, Dong S, Yu C, Liu J, Gai S, Xie Y, Zhao Z, Qin X, Feng L, Yang P, Zhao Y. Mitochondria-targeting Cu 3VS 4 nanostructure with high copper ionic mobility for photothermoelectric therapy. SCIENCE ADVANCES 2023; 9:eadi9980. [PMID: 37910608 PMCID: PMC10619935 DOI: 10.1126/sciadv.adi9980] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Accepted: 09/29/2023] [Indexed: 11/03/2023]
Abstract
Thermoelectric therapy has emerged as a promising treatment strategy for oncology, but it is still limited by the low thermoelectric catalytic efficiency at human body temperature and the inevitable tumor thermotolerance. We present a photothermoelectric therapy (PTET) strategy based on triphenylphosphine-functionalized Cu3VS4 nanoparticles (CVS NPs) with high copper ionic mobility at room temperature. Under near-infrared laser irradiation, CVS NPs not only generate hyperthermia to ablate tumor cells but also catalytically yield superoxide radicals and induce endogenous NADH oxidation through the Seebeck effect. Notably, CVS NPs can accumulate inside mitochondria and deplete NADH, reducing ATP synthesis by competitively inhibiting the function of complex I, thereby down-regulating the expression of heat shock proteins to relieve tumor thermotolerance. Both in vitro and in vivo results show notable tumor suppression efficacy, indicating that the concept of integrating PTET and mitochondrial metabolism modulation is highly feasible and offers a translational promise for realizing precise and efficient cancer treatment.
Collapse
Affiliation(s)
- Yushan Dong
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Shuming Dong
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Chenghao Yu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Jing Liu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Shili Gai
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Ying Xie
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin, 150080, P. R. China
| | - Zhiyu Zhao
- Department of Ultrasound, The First Affiliated Hospital of Harbin Medical University, Harbin 150001, P. R. China
| | - Xiran Qin
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Lili Feng
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Piaoping Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, P. R. China
| | - Yanli Zhao
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| |
Collapse
|
86
|
Jin Q, Zhao Y, Long X, Jiang S, Qian C, Ding F, Wang Z, Li X, Yu Z, He J, Song Y, Yu H, Wan Y, Tai K, Gao N, Tan J, Liu C, Cheng HM. Flexible Carbon Nanotube-Epitaxially Grown Nanocrystals for Micro-Thermoelectric Modules. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304751. [PMID: 37533116 DOI: 10.1002/adma.202304751] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Revised: 07/10/2023] [Indexed: 08/04/2023]
Abstract
Flexible thermoelectric materials have attracted increasing interest because of their potential use in thermal energy harvesting and high-spatial-resolution thermal management. However, a high-performance flexible micro-thermoelectric device (TED) compatible with the microelectronics fabrication process has not yet been developed. Here a universal epitaxial growth strategy is reported guided by 1D van der Waals-coupling, to fabricate freestanding and flexible hybrids comprised of single-wall carbon nanotubes and ordered (Bi,Sb)2 Te3 nanocrystals. High power factors ranging from ≈1680 to ≈1020 µW m-1 K-2 in the temperature range of 300-480 K, combined with a low thermal conductivity yield a high average figure of merit of ≈0.81. The fabricated flexible micro-TED module consisting of two p-n couples of freestanding thermoelectric hybrids has an unprecedented open circuit voltage of ≈22.7 mV and a power density of ≈0.36 W cm-2 under ≈30 K temperature difference, and a net cooling temperature of ≈22.4 K and a heat absorption density of ≈92.5 W cm-2 .
Collapse
Affiliation(s)
- Qun Jin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- University of Chinese Academy of Sciences, Shenyang, 110016, China
- Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany
| | - Yang Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Xuehao Long
- Institute of Frontier and Interdisciplinary Science and Key Laboratory of Particle Physics and Particle Irradiation, Shandong University, Qingdao, 266000, China
- School of Science, Hunan University of Technology, Zhuzhou, 412000, China
| | - Song Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- University of Chinese Academy of Sciences, Shenyang, 110016, China
| | - Cheng Qian
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Faculty of Materials Science and Energy Engineering Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen, 518055, China
| | - Ziqiang Wang
- Institute of Frontier and Interdisciplinary Science and Key Laboratory of Particle Physics and Particle Irradiation, Shandong University, Qingdao, 266000, China
- Key Laboratory of Bionic Engineering Ministry of Education, Jilin University, Changchun, 130000, China
| | - Xiaoqi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Zhi Yu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Juan He
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Yujie Song
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Hailong Yu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Ye Wan
- School of Materials Science and Engineering, Shenyang Jianzhu University, Shenyang, 110016, China
| | - Kaiping Tai
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
- Ji Hua Laboratory, Advanced Manufacturing Science and Technology Guangdong Laboratory, Foshan, 528000, China
| | - Ning Gao
- Institute of Frontier and Interdisciplinary Science and Key Laboratory of Particle Physics and Particle Irradiation, Shandong University, Qingdao, 266000, China
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China
| | - Jun Tan
- Ji Hua Laboratory, Advanced Manufacturing Science and Technology Guangdong Laboratory, Foshan, 528000, China
- Foshan Univerisity, Foshan, 528000, China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- Faculty of Materials Science and Energy Engineering Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen, 518055, China
| |
Collapse
|
87
|
Wu C, Sun L, Han J. Effects of quantum size on the thermoelectric properties of bismuth. Phys Chem Chem Phys 2023; 25:28735-28743. [PMID: 37850267 DOI: 10.1039/d3cp02393a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
First principles and the Boltzmann transport equation have been combined to investigate the effects of quantum size L/λ, the ratio of quantum confinement length L to thermal de Broglie wavelength λ, on the thermoelectric properties of 2D β-bismuth. It is revealed that the thermoelectric properties of 2D β-bismuth are highly influenced by quantum size, especially when the L/λ is less than 0.1. Specifically, the Seebeck coefficients of both electrons and holes decrease as the L/λ ratio increases, while the electrical and thermal conductivity show the opposite trend. The results also show that 2D bismuth with three or more layers has semimetal properties, with the first observation of a semiconductor-semimetal transition in 2D bismuth. Moreover, the electron affinity, ionization energy, and work function of 2D β-bismuth do not exhibit a significant variation or trend with quantum size effects. The detailed electronic structures provide a fundamental understanding of the thermoelectric properties of bismuth, and the obtained results may provide a deep understanding of the relationship between the quantum size and the thermoelectric properties of 2D β-bismuth.
Collapse
Affiliation(s)
- Changyi Wu
- Department of Physics and Chemistry, Hunan First Normal University, Changsha, Hunan 410205, China.
| | - Lei Sun
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083, China
| | - Jinchen Han
- Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, USA
| |
Collapse
|
88
|
Liu Z, Tian B, Li Y, Guo Z, Zhang Z, Luo Z, Zhao L, Lin Q, Lee C, Jiang Z. Evolution of Thermoelectric Generators: From Application to Hybridization. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304599. [PMID: 37544920 DOI: 10.1002/smll.202304599] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 07/12/2023] [Indexed: 08/08/2023]
Abstract
Considerable thermal energy is emitted into the environment from human activities and equipment operation in the course of daily production. Accordingly, the use of thermoelectric generators (TEGs) can attract wide interest, and it shows high potential in reducing energy waste and increasing energy recovery rates. Notably, TEGs have aroused rising attention and been significantly boosted over the past few years, as the energy crisis has worsened. The reason for their progress is that thermoelectric generators can be easily attached to the surface of a heat source, converting heat energy directly into electricity in a stable and continuous manner. In this review, applications in wearable devices, and everyday life are reviewed according to the type of structure of TEGs. Meanwhile, the latest progress of TEGs' hybridization with triboelectric nanogenerator (TENG), piezoelectric nanogenerator (PENG), and photovoltaic effect is introduced. Moreover, prospects and suggestions for subsequent research work are proposed. This review suggests that hybridization of energy harvesting, and flexible high-temperature thermoelectric generators are the future trends.
Collapse
Affiliation(s)
- Zhaojun Liu
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore
| | - Bian Tian
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
- Shandong Province, Yantai City, Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai, 265503, China
| | - Yao Li
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zijun Guo
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhongkai Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhifang Luo
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore
- School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Libo Zhao
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Qijing Lin
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Chengkuo Lee
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore
| | - Zhuangde Jiang
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| |
Collapse
|
89
|
Liu Y, Geng Y, Dou Y, Wu X, Hu L, Liu F, Ao W, Zhang C. Mg Compensating Design in the Melting-Sintering Method For High-Performance Mg 3 (Bi, Sb) 2 Thermoelectric Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303840. [PMID: 37381087 DOI: 10.1002/smll.202303840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 06/16/2023] [Indexed: 06/30/2023]
Abstract
N-type Mg3 (Bi, Sb)2 -based thermoelectric (TE) alloys show great promise for solid-state power generation and refrigeration, owing to their excellent figure-of-merit (ZT) and using cheap Mg. However, their rigorous preparation conditions and poor thermal stability limit their large-scale applications. Here, this work develops an Mg compensating strategy to realize n-type Mg3 (Bi, Sb)2 by a facile melting-sintering approach. "2D roadmaps" of TE parameters versus sintering temperature and time are plotted to understand the Mg-vacancy-formation and Mg-diffusion mechanisms. Under this guidance, high weight mobility of 347 cm2 V-1 s-1 and power factor of 34 µW cm-1 K-2 can be obtained for Mg3.05 Bi1.99 Te0.01 , and a peak ZT≈1.55 at 723 K and average ZT≈1.25 within 323-723 K can be obtained for Mg3.05 (Sb0.75 Bi0.25 )1.99 Te0.01 . Moreover, this Mg compensating strategy can also improve the interfacial connecting and thermal stability of corresponding Mg3 (Bi, Sb)2 /Fe TE legs. As a consequence, this work fabricates an 8-pair Mg3 Sb2 -GeTe-based power-generation device reaching an energy conversion efficiency of ≈5.0% at a temperature difference of 439 K, and a one-pair Mg3 Sb2 -Bi2 Te3 -based cooling device reaching -10.7 °C at the cold side. This work paves a facile way to obtain Mg3 Sb2 -based TE devices at low cost and also provides a guide to optimize the off-stoichiometric defects in other TE materials.
Collapse
Affiliation(s)
- Yali Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yang Geng
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yubo Dou
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Xuelian Wu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Lipeng Hu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Fusheng Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Weiqin Ao
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Chaohua Zhang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China
| |
Collapse
|
90
|
Dong J, Zhang D, Liu J, Jiang Y, Tan XY, Jia N, Cao J, Suwardi A, Zhu Q, Xu J, Li JF, Yan Q. N-Type Thermoelectric AgBiPbS 3 with Nanoprecipitates and Low Thermal Conductivity. Inorg Chem 2023; 62:17905-17912. [PMID: 37843461 DOI: 10.1021/acs.inorgchem.3c02777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
Thermoelectric sulfide materials are of particular interest due to the earth-abundant and cost-effective nature of sulfur. Here, we report a new n-type degenerate semiconductor sulfide, AgBiPbS3, which adopts a Fm3̅m structure with a narrow band gap of ∼0.32 eV. Despite the homogeneous distribution of elements at the scale of micrometer, Ag2S nanoprecipitates with dimensions of several nanometers were detected throughout the matrix. AgBiPbS3 exhibits a low room-temperature lattice thermal conductivity of 0.88 W m-1 K-1, owing to the intrinsic low lattice thermal conductivity of Ag2S and the effective scattering of phonons at nanoprecipitate boundaries. Moreover, compared to AgBiS2, AgBiPbS3 demonstrates a significantly improved weighted mobility of >16 cm2 V-1 s-1 at 300 K, leading to an enhanced PF of 1.6 μW cm-1 K-2 at 300 K. The superior electrical transport in AgBiPbS3 can be attributed to the high valley degeneracy of the L point (the conduction band minimum), which is contributed by the Pb s and Pb p orbitals. Further, Ga doping is found to be effective in modulating the Fermi levels of AgBiPbS3, leading to further enhancement of PF with a PFave of 2.7 μW cm-1 K-2 in the temperature range of 300-823 K. Consequently, a relatively high ZTave of 0.22 and a peak ZT of ∼0.4 at 823 K have been achieved in 3% Ga-doped AgBiPbS3, highlighting the potential of AgBiPbS3 as an n-type thermoelectric sulfide.
Collapse
Affiliation(s)
- Jinfeng Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Dan Zhang
- Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Jiawei Liu
- Institute of Sustainability for Chemicals, Energy and Environment, A*STAR, Singapore 627833, Singapore
| | - Yilin Jiang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Xian Yi Tan
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Ning Jia
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jing Cao
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Ady Suwardi
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Qiang Zhu
- Institute of Sustainability for Chemicals, Energy and Environment, A*STAR, Singapore 627833, Singapore
| | - Jianwei Xu
- Institute of Sustainability for Chemicals, Energy and Environment, A*STAR, Singapore 627833, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Qingyu Yan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| |
Collapse
|
91
|
Guan QL, Dong LQ, Hao Q. Improved Thermoelectric Performance of Sb 2Te 3 Nanosheets by Coating Pt Particles in Wide Medium-Temperature Zone. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6961. [PMID: 37959558 PMCID: PMC10647828 DOI: 10.3390/ma16216961] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Revised: 10/22/2023] [Accepted: 10/26/2023] [Indexed: 11/15/2023]
Abstract
The p-type Sb2Te3 alloy, a binary compound belonging to the V2VI3-based materials, has been widely used as a commercial material in the room-temperature zone. However, its low thermoelectric performance hinders its application in the low-medium temperature range. In this study, we prepared Sb2Te3 nanosheets coated with nanometer-sized Pt particles using a combination of solvothermal and photo-reduction methods. Our findings demonstrate that despite the adverse effects on certain properties, the addition of Pt particles to Sb2Te3 significantly improves the thermoelectric properties, primarily due to the enhanced electronic conductivity. The optimal ZT value reached 1.67 at 573 K for Sb2Te3 coated with 0.2 wt% Pt particles, and it remained above 1.0 within the temperature range of 333-573 K. These values represent a 47% and 49% increase, respectively, compared to the pure Sb2Te3 matrix. This enhancement in thermoelectric performance can be attributed to the presence of Pt metal particles, which effectively enhance carrier and phonon transport properties. Additionally, we conducted a Density Functional Theory (DFT) study to gain further insights into the underlying mechanisms. The results revealed that Sb2Te3 doped with Pt exhibited a doping level in the band structure, and a sharp rise in the Density of States (DOS) was observed. This sharp rise can be attributed to the presence of Pt atoms, which lead to enhanced electronic conductivity. In conclusion, our findings demonstrate that the incorporation of nanometer-sized Pt particles effectively improves the carrier and phonon transport properties of the Sb2Te3 alloy. This makes it a promising candidate for medium-temperature thermoelectric applications, as evidenced by the significant enhancement in thermoelectric performance achieved in this study.
Collapse
Affiliation(s)
- Qing-Ling Guan
- Beijing Institute of Technology, School of Optics & Photonics, Beijing Key Laboratory Precise Optoelectronics Measurement Institute, Beijing 100081, China; (Q.-L.G.); (Q.H.)
- Beijing Institute of Technology, Yangtze Delta Region Academy, Jiaxing 314019, China
| | - Li-Quan Dong
- Beijing Institute of Technology, School of Optics & Photonics, Beijing Key Laboratory Precise Optoelectronics Measurement Institute, Beijing 100081, China; (Q.-L.G.); (Q.H.)
- Beijing Institute of Technology, Yangtze Delta Region Academy, Jiaxing 314019, China
| | - Qun Hao
- Beijing Institute of Technology, School of Optics & Photonics, Beijing Key Laboratory Precise Optoelectronics Measurement Institute, Beijing 100081, China; (Q.-L.G.); (Q.H.)
| |
Collapse
|
92
|
Li Z, Xu Y, Wu L, Cui J, Dou H, Zhang X. Enabling giant thermopower by heterostructure engineering of hydrated vanadium pentoxide for zinc ion thermal charging cells. Nat Commun 2023; 14:6816. [PMID: 37884519 PMCID: PMC10603064 DOI: 10.1038/s41467-023-42492-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Accepted: 10/12/2023] [Indexed: 10/28/2023] Open
Abstract
Flexible power supply devices provide possibilities for wearable electronics in the Internet of Things. However, unsatisfying capacity or lifetime of typical batteries or capacitors seriously limit their practical applications. Different from conventional heat-to-electricity generators, zinc ion thermal charging cells has been a competitive candidate for the self-power supply solution, but the lack of promising cathode materials has restricted the achievement of promising performances. Herein, we propose an attractive cathode material by rational heterostructure engineering of hydrated vanadium pentoxide. Owing to the integration of thermodiffusion and thermoextraction effects, the thermopower is significantly improved from 7.8 ± 2.6 mV K-1 to 23.4 ± 1.5 mV K-1. Moreover, an impressive normalized power density of 1.9 mW m-2 K-2 is achieved in the quasi-solid-state cells. In addition, a wearable power supply constructed by three units can drive the commercial health monitoring system by harvesting body heat. This work demonstrates the effectiveness of electrodes design for wearable thermoelectric applications.
Collapse
Affiliation(s)
- Zhiwei Li
- Jiangsu Key Laboratory of Electrochemical Energy Storage Technologies, College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, China
| | - Yinghong Xu
- Jiangsu Key Laboratory of Electrochemical Energy Storage Technologies, College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, China
| | - Langyuan Wu
- Jiangsu Key Laboratory of Electrochemical Energy Storage Technologies, College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, China
| | - Jiaxin Cui
- Jiangsu Key Laboratory of Electrochemical Energy Storage Technologies, College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, China
| | - Hui Dou
- Jiangsu Key Laboratory of Electrochemical Energy Storage Technologies, College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, China
| | - Xiaogang Zhang
- Jiangsu Key Laboratory of Electrochemical Energy Storage Technologies, College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, China.
| |
Collapse
|
93
|
Zhang J, Nisar M, Xu H, Li F, Zheng Z, Liang G, Fan P, Chen YX. High-Performance Thermoelectric Flexible Ag 2Se-Based Films with Wave-Shaped Buckling via a Thermal Diffusion Method. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47158-47167. [PMID: 37782895 DOI: 10.1021/acsami.3c12486] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2023]
Abstract
Herein, an n-type Ag2Se thermoelectric flexible thin film has been fabricated on a polyimide (PI) substrate via a novel thermal diffusion method, and the thermoelectric performance is well-optimized by adjusting the pressure and temperature of thermal diffusion. All of the Ag2Se films are beneficial to grow (013) preferred orientations, which is conducive to performing a high Seebeck coefficient. By increasing the thermal diffusion temperature, the electrical conductivity can be rationally regulated while maintaining the independence of the Seebeck coefficient, which is mainly attributed to the increased electric mobility. As a result, the fabricated Ag2Se thin film achieves a high power factor of 18.25 μW cm-1 K-2 at room temperature and a maximum value of 21.7 μW cm-1 K-2 at 393 K. Additionally, the thermal diffusion method has resulted in a wave-shaped buckling, which is further verified as a promising structure to realize a larger temperature difference by the simulation results of finite element analysis (FEA). Additionally, this unique surface morphology of the Ag2Se thin film also exhibits outstanding mechanical properties, for which the elasticity modulus is only 0.42 GPa. Finally, a flexible round-shaped module assembled with Sb2Te3 has demonstrated an output power of 166 nW at a temperature difference of 50 K. This work not only introduces a new method of preparing Ag2Se thin films but also offers a convincing strategy of optimizing the microstructure to enhance low-grade heat utilization efficiency.
Collapse
Affiliation(s)
- Junze Zhang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Mohammad Nisar
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Hanwen Xu
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Fu Li
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Zhuanghao Zheng
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Guangxing Liang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ping Fan
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yue-Xing Chen
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| |
Collapse
|
94
|
Zhao L, Han H, Lu Z, Yang J, Wu X, Ge B, Yu L, Shi Z, Karami AM, Dong S, Hussain S, Qiao G, Xu J. Realizing the Ultralow Lattice Thermal Conductivity of Cu 3SbSe 4 Compound via Sulfur Alloying Effect. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2730. [PMID: 37836371 PMCID: PMC10574639 DOI: 10.3390/nano13192730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 10/04/2023] [Accepted: 10/06/2023] [Indexed: 10/15/2023]
Abstract
Cu3SbSe4 is a potential p-type thermoelectric material, distinguished by its earth-abundant, inexpensive, innocuous, and environmentally friendly components. Nonetheless, the thermoelectric performance is poor and remains subpar. Herein, the electrical and thermal transport properties of Cu3SbSe4 were synergistically optimized by S alloying. Firstly, S alloying widened the band gap, effectively alleviating the bipolar effect. Additionally, the substitution of S in the lattice significantly increased the carrier effective mass, leading to a large Seebeck coefficient of ~730 μVK-1. Moreover, S alloying yielded point defect and Umklapp scattering to significantly depress the lattice thermal conductivity, and thus brought about an ultralow κlat ~0.50 Wm-1K-1 at 673 K in the solid solution. Consequently, multiple effects induced by S alloying enhanced the thermoelectric performance of the Cu3SbSe4-Cu3SbS4 solid solution, resulting in a maximum ZT value of ~0.72 at 673 K for the Cu3SbSe2.8S1.2 sample, which was ~44% higher than that of pristine Cu3SbSe4. This work offers direction on improving the comprehensive TE in solid solutions via elemental alloying.
Collapse
Affiliation(s)
- Lijun Zhao
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Haiwei Han
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Zhengping Lu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Jian Yang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Xinmeng Wu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Bangzhi Ge
- School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China
| | - Lihua Yu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Zhongqi Shi
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
| | - Abdulnasser M. Karami
- Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Songtao Dong
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Shahid Hussain
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Guanjun Qiao
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Junhua Xu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| |
Collapse
|
95
|
Sarkar D, Dolui K, Taneja V, Ahad A, Dutta M, Manjunatha SO, Swain D, Biswas K. Chemical Bonding Tuned Lattice Anharmonicity Leads to a High Thermoelectric Performance in Cubic AgSnSbTe 3. Angew Chem Int Ed Engl 2023; 62:e202308515. [PMID: 37583094 DOI: 10.1002/anie.202308515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Revised: 08/15/2023] [Accepted: 08/15/2023] [Indexed: 08/17/2023]
Abstract
Comprehension of chemical bonding and its intertwined relation with charge carriers and heat propagation through a crystal lattice is imperative to design compounds for thermoelectric energy conversion. Here, we report the synthesis of large single crystal of new p-type cubic AgSnSbTe3 which shows an innately ultra-low lattice thermal conductivity (κlat ) of 0.47-0.27 Wm-1 K-1 and a high electrical conductivity (1238 - 800 S cm-1 ) in the temperature range 294-723 K. We investigated the origin of the low κlat by analysing the nature of the chemical bonding and its crystal structure. The interaction between Sn(5 s)/Ag(4d) and Te(5p) orbitals was found to generate antibonding states just below the Fermi level in the electronic band structure, resulting in a softening of the lattice in AgSnSbTe3 . Furthermore, the compound exhibits metavalent bonding which provides highly polarizable bonds with a strong lattice anharmonicity while maintaining the superior electrical conductivity. The electronic band structure exhibits nearly degenerate valence-band maxima that help to achieve a high Seebeck coefficient throughout the measured temperature range and, as a result, the maximum thermoelectric figure of merit reaches to ≈1.2 at 661 K in pristine single crystal of AgSnSbTe3 .
Collapse
Affiliation(s)
- Debattam Sarkar
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Kapildeb Dolui
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Vaishali Taneja
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Abdul Ahad
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Moinak Dutta
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - S O Manjunatha
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Diptikanta Swain
- Institute of Chemical Technology-IndianOil, Odisha Campus, Bhubaneswar, 751013, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| |
Collapse
|
96
|
Jung Y, Lee W, Han S, Kim BS, Yoo SJ, Jang H. Thermal Transport Properties of Phonons in Halide Perovskites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204872. [PMID: 36036368 DOI: 10.1002/adma.202204872] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 08/21/2022] [Indexed: 06/15/2023]
Abstract
Halide perovskites have emerged as promising candidates for various applications, such as photovoltaic, optoelectronic and thermoelectric applications. The knowledge of the thermal transport of halide perovskites is essential for enhancing the device performance for these applications and improving the understanding of heat transport in complicated material systems with atomic disorders. In this work, the current understanding of the experimentally and theoretically obtained thermal transport properties of halide perovskites is reviewed. This study comprehensively examines the reported thermal conductivity of methylammonium lead iodide, which is a prototype material, and provides theoretical frameworks for its lattice vibrational properties. The frameworks and discussions are extended to other halide perovskites and derivative structures. The implications for device applications, such as solar cells and thermoelectrics, are discussed.
Collapse
Affiliation(s)
- Yoonseong Jung
- Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| | - Wonsik Lee
- Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| | - Seungbin Han
- Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| | - Beom-Soo Kim
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, South Korea
| | - Seung-Jun Yoo
- Future Technology, LG Chem, Seoul, 07796, South Korea
| | - Hyejin Jang
- Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea
| |
Collapse
|
97
|
Yuan K, Zhang X, Gao Y, Tang D. Soft phonon modes lead to suppressed thermal conductivity in Ag-based chalcopyrites under high pressure. Phys Chem Chem Phys 2023; 25:24883-24893. [PMID: 37681237 DOI: 10.1039/d3cp03087c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/09/2023]
Abstract
Pressure is a powerful way to modulate physical properties. Understanding the effect of pressure on the thermal transport properties of thermoelectric materials is of great importance for the efficient design and optimization of thermoelectric performance. In this work, based on first-principles calculations and phonon Boltzmann transport theory, we find that the lattice thermal conductivities of Ag-based chalcopyrites AgXY2 (X = Al, Ga, and In; Y = S, Se, and Te) are dramatically suppressed by applying pressure. The inherent distorted tetrahedral configuration together with highly delocalized p-orbital electrons promotes the formation of metavalent bonding. The fact of metavalent bonding with a single bonding electron and small electron transfer between neighboring atoms leads to soft low-frequency optical phonons. With the increase of pressure, the softening of acoustic and low-frequency optical phonons induces enhanced anharmonicity and scattering channels. Such strong acoustic-optical phonon coupling results in larger phonon scattering rates and thus lowers the lattice thermal conductivity. These findings not only help unveil the underlying physical mechanisms for the anomalous thermal transport behaviors under high pressure, but also pave the way for the pressure tuning of high-performance Ag-based thermoelectric materials.
Collapse
Affiliation(s)
- Kunpeng Yuan
- College of New Energy, China University of Petroleum (East China), Qingdao 266580, China
| | - Xiaoliang Zhang
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China.
| | - Yufei Gao
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China.
| | - Dawei Tang
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China.
| |
Collapse
|
98
|
Zhang W, Liu X, Jiao K, Wang Q, Yang C, Zhao C. Ion Steric Effect Induces Giant Enhancement of Thermoelectric Conversion in Electrolyte-Filled Nanochannels. NANO LETTERS 2023; 23:8264-8271. [PMID: 37590911 DOI: 10.1021/acs.nanolett.3c02469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/19/2023]
Abstract
Ionic thermoelectricity in nanochannels has received increasing attention because of its advantages, such as high Seebeck coefficient and low cost. However, most studies have focused on dilute simple electrolytes that neglect the effects of finite ion sizes and short-range electrostatic correlation. Here, we reveal a new thermoelectric mechanism arising from the coupling of the ion steric effect due to finite ion sizes and ion thermodiffusion in electric double layers, using both theoretical and numerical methods. We show that this mechanism can significantly enhance the thermoelectric response in nanoconfined electrolytes depending on the properties of electrolytes and nanochannels. Compared to the previously known mechanisms, the new mechanism can increase the Seebeck coefficient by 100% or even 1 order of magnitude enhancement under optimal conditions. Moreover, we demonstrate that the short-range electrostatic correlation can help preserve the Seebeck coefficient enhancement in a weaker confinement or in more concentrated electrolytes.
Collapse
Affiliation(s)
- Wenyao Zhang
- MOE Key Laboratory of Thermo-Fluid Science and Engineering, School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xinxi Liu
- MOE Key Laboratory of Thermo-Fluid Science and Engineering, School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Kai Jiao
- MOE Key Laboratory of Thermo-Fluid Science and Engineering, School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Qiuwang Wang
- MOE Key Laboratory of Thermo-Fluid Science and Engineering, School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chun Yang
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cunlu Zhao
- MOE Key Laboratory of Thermo-Fluid Science and Engineering, School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| |
Collapse
|
99
|
Zhang C, Lai Q, Wang W, Zhou X, Lan K, Hu L, Cai B, Wuttig M, He J, Liu F, Yu Y. Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High-Performance Bi 2 Te 3 -Based Thermoelectric Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302688. [PMID: 37386820 PMCID: PMC10502665 DOI: 10.1002/advs.202302688] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Revised: 06/02/2023] [Indexed: 07/01/2023]
Abstract
Bi2 Te3 -based alloys have great market demand in miniaturized thermoelectric (TE) devices for solid-state refrigeration and power generation. However, their poor mechanical properties increase the fabrication cost and decrease the service durability. Here, this work reports on strengthened mechanical robustness in Bi2 Te3 -based alloys due to thermodynamic Gibbs adsorption and kinetic Zener pinning at grain boundaries enabled by MgB2 decomposition. These effects result in much-refined grain size and twofold enhancement of the compressive strength and Vickers hardness in (Bi0.5 Sb1.5 Te3 )0.97 (MgB2 )0.03 compared with that of traditional powder-metallurgy-derived Bi0.5 Sb1.5 Te3 . High mechanical properties enable excellent cutting machinability in the MgB2 -added samples, showing no missing corners or cracks. Moreover, adding MgB2 facilitates the simultaneous optimization of electron and phonon transport for enhancing the TE figure of merit (ZT). By further optimizing the Bi/Sb ratio, the sample (Bi0.4 Sb1.6 Te3 )0.97 (MgB2 )0.03 shows a maximum ZT of ≈1.3 at 350 K and an average ZT of 1.1 within 300-473 K. As a consequence, robust TE devices with an energy conversion efficiency of 4.2% at a temperature difference of 215 K are fabricated. This work paves a new way for enhancing the machinability and durability of TE materials, which is especially promising for miniature devices.
Collapse
Affiliation(s)
- Chaohua Zhang
- College of Materials Science and EngineeringShenzhen Key Laboratory of Special Functional MaterialsShenzhen Engineering Laboratory for Advanced Technology of CeramicsGuangdong Research Center for Interfacial Engineering of Functional MaterialsInstitute of Deep Underground Sciences and Green EnergyShenzhen University518060ShenzhenP. R. China
| | - Qiangwen Lai
- College of Materials Science and EngineeringShenzhen Key Laboratory of Special Functional MaterialsShenzhen Engineering Laboratory for Advanced Technology of CeramicsGuangdong Research Center for Interfacial Engineering of Functional MaterialsInstitute of Deep Underground Sciences and Green EnergyShenzhen University518060ShenzhenP. R. China
| | - Wu Wang
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Xuyang Zhou
- Department of Microstructure Physics and Alloy DesignMax‐Planck‐Institut für Eisenforschung GmbH40237DüsseldorfGermany
| | - Kailiang Lan
- College of Materials Science and EngineeringShenzhen Key Laboratory of Special Functional MaterialsShenzhen Engineering Laboratory for Advanced Technology of CeramicsGuangdong Research Center for Interfacial Engineering of Functional MaterialsInstitute of Deep Underground Sciences and Green EnergyShenzhen University518060ShenzhenP. R. China
| | - Lipeng Hu
- College of Materials Science and EngineeringShenzhen Key Laboratory of Special Functional MaterialsShenzhen Engineering Laboratory for Advanced Technology of CeramicsGuangdong Research Center for Interfacial Engineering of Functional MaterialsInstitute of Deep Underground Sciences and Green EnergyShenzhen University518060ShenzhenP. R. China
| | - Bowen Cai
- Shenzhen Jianju Technology Co. Ltd.518000ShenzhenP. R. China
| | - Matthias Wuttig
- Institute of Physics (IA)RWTH Aachen University52056AachenGermany
- PGI 10 (Green IT)Forschungszentrum Jülich GmbH52428JülichGermany
| | - Jiaqing He
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Fusheng Liu
- College of Materials Science and EngineeringShenzhen Key Laboratory of Special Functional MaterialsShenzhen Engineering Laboratory for Advanced Technology of CeramicsGuangdong Research Center for Interfacial Engineering of Functional MaterialsInstitute of Deep Underground Sciences and Green EnergyShenzhen University518060ShenzhenP. R. China
| | - Yuan Yu
- Institute of Physics (IA)RWTH Aachen University52056AachenGermany
| |
Collapse
|
100
|
Wang H, Feng X, Lu Z, Duan B, Yang H, Wu L, Zhou L, Zhai P, Snyder GJ, Li G, Zhang Q. Synergetic Enhancement of Strength-Ductility and Thermoelectric Properties of Ag 2 Te by Domain Boundaries. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302969. [PMID: 37192421 DOI: 10.1002/adma.202302969] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 12/12/2012] [Indexed: 05/18/2023]
Abstract
Simultaneously improving the mechanical and thermoelectric (TE) properties is significant for the engineering applications of inorganic TE materials. In this work, a novel nanodomain strategy is developed for Ag2 Te compounds to yield 40% and 200% improved compressive strength (160 MPa) and fracture strain (16%) when compared to domain-free samples (115 MPa and 5.5%, respectively). The domained samples also achieve a 45% improvement in average ZT value. The domain boundaries (DBs) provide extra sites for dislocation nucleation while pinning the dislocation movement, resulting in superior strength and ductility. In addition, phonon scattering induced by DBs suppresses the lattice thermal conductivity of Ag2 Te and also reduces the weighted mobility. These findings provide new insights into grain and DB engineering for high-performance inorganic semiconductors with robust mechanical properties.
Collapse
Affiliation(s)
- Hongtao Wang
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Xiaobin Feng
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Zhongtao Lu
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Bo Duan
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Houjiang Yang
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Luoqi Wu
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Ling Zhou
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Pengcheng Zhai
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - G Jeffrey Snyder
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Guodong Li
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| |
Collapse
|