Equilibrium potential of free charge carriers in a bent piezoelectric semiconductive nanowire

Room-temperature self-powered ethanol sensing of a Pd/ZnO nanoarray nanogenerator driven by human finger movement

A flexible room-temperature self-powered active ethanol sensor has been realized from a Pd/ZnO nanoarray nanogenerator. Pd nanoparticles are uniformly loaded on the whole surface of the ZnO nanowire arrays by a simple hydrothermal method. The piezoelectric output of the Pd/ZnO nanowire arrays can act as both the power source of the device and the room-temperature ethanol sensing signal. Upon exposure to 800 ppm ethanol gas at room temperature, the piezoelectric output voltage decreased from 0.52 V (in air) to 0.25 V. Such a room-temperature self-powered ethanol sensing behavior can be attributed to the catalytic effect of Pd, the Schottky barrier at the Pd/ZnO interface, and the piezotronics effect of the ZnO nanowires. Moreover, this flexible device can be driven by tiny mechanic energy in the environment, such as human finger movement. The present results can stimulate a research trend on designing new material systems and device structures in self-powered ethanol sensing at room temperature.

Piezotronic effect on ZnO nanowire film based temperature sensor

In this work, we demonstrated the first study of piezotronic effect as a potential means for measuring temperature by utilizing ZnO nanowire (NW) film. The film was synthesized by the wet chemical deposition method and transferred to a flexible substrate using photoresist. The primary role of piezotronic effect over geometrical and piezoresistive effect in the as-fabricated devices has been confirmed, and piezotronic effect on charge carrier transportation under different strains is subsequently studied. In addition, we also presented that the temperature sensing capability of as-fabricated NW film based piezotronic devices can be tuned by piezopotential, which exhibits dramatically enhanced sensitivity. A theoretical model is proposed to interpret the observed behaviors of the sensor. This study provides an effective method to fabricate temperature sensors with higher performance based on piezotronic effect in the future.

Pt/ZnO nanoarray nanogenerator as self-powered active gas sensor with linear ethanol sensing at room temperature

A self-powered gas sensor that can actively detect ethanol at room temperature has been realized from a Pt/ZnO nanoarray nanogenerator. Pt nanoparticles are uniformly distributed on the whole surface of ZnO nanowires. The piezoelectric output of Pt/ZnO nanoarrays can act not only as a power source, but also as a response signal to ethanol at room temperature. Upon exposure to dry air and 1500 ppm ethanol at room temperature, the piezoelectric output of the device under the same compressive strain is 0.672 and 0.419 V, respectively. Moreover, a linear dependence of the sensitivity on the ethanol concentration is observed. Such a linear ethanol sensing at room temperature can be attributed to the atmosphere-dependent variety of the screen effect on the piezoelectric output of ZnO nanowires, the catalytic properties of Pt nanoparticles, and the Schottky barriers at Pt/ZnO interfaces. The present results can stimulate research in the direction of designing new material systems for self-powered room-temperature gas sensing.

In situ electron microscopy four-point electromechanical characterization of freestanding metallic and semiconducting nanowires

Electromechanical coupling is a topic of current interest in nanostructures, such as metallic and semiconducting nanowires, for a variety of electronic and energy applications. As a result, the determination of structure-property relations that dictate the electromechanical coupling requires the development of experimental tools to perform accurate metrology. Here, a novel micro-electro-mechanical system (MEMS) that allows integrated four-point, uniaxial, electromechanical measurements of freestanding nanostructures in-situ electron microscopy, is reported. Coupled mechanical and electrical measurements are carried out for penta-twinned silver nanowires, their resistance is identified as a function of strain, and it is shown that resistance variations are the result of nanowire dimensional changes. Furthermore, in situ SEM piezoresistive measurements on n-type, [111]-oriented silicon nanowires up to unprecedented levels of ∼7% strain are demonstrated. The piezoresistance coefficients are found to be similar to bulk values. For both metallic and semiconducting nanowires, variations of the contact resistance as strain is applied are observed. These variations must be considered in the interpretation of future two-point electromechanical measurements.

Piezotronics and piezo-phototronics: fundamentals and applications

Technology advancement that can provide new solutions and enable augmented capabilities to complementary metal–oxide–semiconductor (CMOS)-based technology, such as active and adaptive interaction between machine and human/ambient, is highly desired. Piezotronic nanodevices and integrated systems exhibit potential in achieving these application goals. Utilizing the gating effect of piezopotential over carrier behaviors in piezoelectric semiconductor materials under externally applied deformation, the piezoelectric and semiconducting properties together with optoelectronic excitation processes can be coupled in these materials for the investigation of novel fundamental physics and the implementation of unprecedented applications. Piezopotential is created by the strain-induced ionic polarization in the piezoelectric semiconducting crystal. Piezotronics deal with the devices fabricated using the piezopotential as a ‘gate’ voltage to tune/control charge-carrier transport across the metal–semiconductor contact or the p–n junction. Piezo-phototronics is to use the piezopotential for controlling the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices. This review intends to provide an overview of the rapid progress in the emerging fields of piezotronics and piezo-phototronics. The concepts and results presented in this review show promises for implementing novel nano-electromechanical devices and integrating with micro/nano-electromechanical system technology to achieve augmented functionalities to the state-of-the-art CMOS technology that may find applications in the human–machine interfacing, active flexible/stretchable electronics, sensing, energy harvesting, biomedical diagnosis/therapy, and prosthetics.

Temperature dependence of the piezotronic effect in ZnO nanowires

A comprehensive investigation was carried out on n-type ZnO nanowires for studying the temperature dependence of the piezotronic effect from 77 to 300 K. In general, lowering the temperature results in a largely enhanced piezotronic effect. The experimental results show that the behaviors can be divided into three groups depending on the carrier doping level or conductivity of the ZnO nanowires. For nanowires with a low carrier density (<10(17)/cm(3) at 77 K), the pieozotronic effect is dominant at low temperature for dictating the transport properties of the nanowires; an opposite change of Schottky barrier heights at the two contacts as a function of temperature at a fixed strain was observed for the first time. At a moderate doping (between 10(17)/cm(3) and 10(18)/cm(3) at 77 K), the piezotronic effect is only dominant at one contact, because the screening effect of the carriers to the positive piezoelectric polarization charges at the other end (for n-type semiconductors). For nanowires with a high density of carriers (>10(18)/cm(3) at 77 K), the piezotronic effect almost vanishes. This study not only proves the proposed fundamental mechanism of piezotronic effect, but also provides guidance for fabricating piezotronic devices.

Two-dimensional vanadium-doped ZnO nanosheet-based flexible direct current nanogenerator

Here, we report the synthesis of lead-free single-crystalline two-dimensional (2D) vanadium(V)-doped ZnO nanosheets (NSs) and their application for high-performance flexible direct current (DC) power piezoelectric nanogenerators (NGs). The vertically aligned ZnO nanorods (NRs) converted to NS networks by V doping. Piezoresponse force microscopy studies reveal that vertical V-doped ZnO NS exhibit typical ferroelectricity with clear phase loops, butterfly, and well-defined hysteresis loops with a piezoelectric charge coefficient of up to 4 pm/V, even in 2D nanostructures. From pristine ZnO NR-based NGs, alternating current (AC)-type output current was observed, while from V-doped ZnO NS-based NGs, a DC-type output current density of up to 1.0 μAcm(-2) was surprisingly obtained under the same vertical compressive force. The growth mechanism, ferroelectric behavior, charge inverted phenomena, and high piezoelectric output performance observed from the V-doped ZnO NS are discussed in terms of the formation of an ionic layer of [V(OH)4(-)], permanent electric dipole, and the doping-induced resistive behavior of ZnO NS.

Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion

Quasi-1D piezoelectric nanostructures may offer unprecedented sensitivity for transducing minuscule input mechanical forces into high output voltages due to both scaling laws and increased piezoelectric coefficients. However, until now both theoretical and experimental studies have suggested that, for a given mechanical force, lateral bending of piezoelectric nanowires results in lower output electric potentials than vertical compression. Here we demonstrate that this result only applies to nanostructures with a constant cross-section. Moreover, though it is commonly believed that the output electric potential of a strained piezo-semiconductive device can only be reduced by the presence of free charges, we show that the output piezopotential of laterally bent tapered nanostructures, with typical doping levels and very small input forces, can be even increased up to two times by free charges.Our analyses confirm that, though not optimal for piezoelectric energy harvesting, lateral bending of tapered nanostructures with typical doping levels can be ideal for transducing tiny input mechanical forces into high and accessible piezopotentials. Our results provide guidelines for designing high-performance piezo-nano-devices for energy harvesting, mechanical sensing, piezotronics, piezo-phototronics, and piezo-controlled chemical reactions, among others.

Piezotronic effect in flexible thin-film based devices

Flexible piezotronic devices based on RF-sputtered piezoelectric semiconductor thin films have been investigated for the first time. The dominating role of the piezotronic effect over the geometrical and piezoresistive effect in the as-fabricated devices has been confirmed and the modulation effect of the piezopotential on charge carrier transport under different strains is subsequently studied. Moreover, it is also demonstrated that the UV sensing capability of the as-fabricated thin film based piezotronic device can be tuned by the piezopotential, showing significantly enhanced sensitivity and improved reset time under tensile strain.

Piezotronic effect in solution-grown p-type ZnO nanowires and films

Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2)·V(-1)·s(-1), and 2.6 × 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2)·V(-1)·s(-1), and 3.8 × 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing.

Surface free-carrier screening effect on the output of a ZnO nanowire nanogenerator and its potential as a self-powered active gas sensor

The output of a piezoelectric nanogenerator (NG) fabricated using ZnO nanowire arrays is largely influenced by the density of the surface charge carriers at the nanowire surfaces. Adsorption of gas molecules could modify the surface carrier density through a screening effect, thus, the output of the NG is sensitive to the gas concentration. Based on such a mechanism, we first studied the responses of an unpackaged NG to oxygen, H2S and water vapor, and demonstrated its sensitivity to H2S to a level as low as 100 ppm. Therefore, the piezoelectric signal generated by a ZnO NWs NG can act not only as a power source, but also as a response signal to the gas, demonstrating a possible approach as a self-powered active gas sensor.

Flexible and transparent nanogenerators based on a composite of lead-free ZnSnO3 triangular-belts

A flexible and transparent lead-free triangular-belt ZnSnO(3) nanogenerator is demonstrated. When a mechanical deformation of ≈0.1% is applied to the triangular-belt ZnSnO(3) nanogenerator, the output voltage and current reached 5.3 V and 0.13 μA, respectively, which indicated a maximum output power density of ≈11 μW·cm(-3). This is the highest output power that has been demonstrated by lead-free ZnSnO(3) triangular-belts.

Piezotronic effects on the optical properties of ZnO nanowires

We report the piezotronic effects on the photoluminescence (PL) properties of bent ZnO nanowires (NWs). We find that the piezoelectric field largely modifies the spatial distribution of the photoexcited carriers in a bent ZnO NW. This effect, together with strain-induced changes in the energy band structure due to the piezoresistive effects, results in a net redshift of free exciton PL emission from a bent ZnO NW. At the large-size limit, this net redshift depends only on the strain parameter, but it is size-dependent if the diameter of the NW is comparable to that of the depletion layer. The experimental data obtained using the near-field scanning optical microscopy technique at low temperatures support our theoretical model.

In situ TEM electromechanical testing of nanowires and nanotubes

The emergence of one-dimensional nanostructures as fundamental constituents of advanced materials and next-generation electronic and electromechanical devices has increased the need for their atomic-scale characterization. Given its spatial and temporal resolution, coupled with analytical capabilities, transmission electron microscopy (TEM) has been the technique of choice in performing atomic structure and defect characterization. A number of approaches have been recently developed to combine these capabilities with in-situ mechanical deformation and electrical characterization in the emerging field of in-situ TEM electromechanical testing. This has enabled researchers to establish unambiguous synthesis-structure-property relations for one-dimensional nanostructures. In this article, the development and latest advances of several in-situ TEM techniques to carry out mechanical and electromechanical testing of nanowires and nanotubes are reviewed. Through discussion of specific examples, it is shown how the merging of several microsystems and TEM has led to significant insights into the behavior of nanowires and nanotubes, underscoring the significant role in-situ techniques play in the development of novel nanoscale systems and materials.

Flexible piezoelectric nanogenerators based on ZnO nanorods grown on common paper substrates

Nanogenerators capable of harvesting energy from environmental mechanical energy are attractive for many applications. In this paper, we present a simple, low-cost approach to convert low-frequency mechanical energy into electric power using piezoelectric ZnO nanorods grown on a common paper substrate. This energy conversion device has ultrahigh flexibility and piezoelectric sensitivity and can produce an output voltage of up to 10 mV and an output current of about 10 nA. It is demonstrated that the device's electric output behavior can be optionally changed between four types of mode simply by controlling the straining rate. Furthermore, it is also shown that the electric output can be enhanced by scaling the size of the device. This energy-harvesting technology provides a simple and cost-effective platform to capture low-frequency mechanical energy, such as body movements, for practical applications.

Piezo-semiconductive quasi-1D nanodevices with or without anti-symmetry

The piezopotential in floating, homogeneous, quasi-1D piezo-semiconductive nanostructures under axial stress is an anti-symmetric (i.e., odd) function of force. Here, after introducing piezo-nano-devices with floating electrodes for maximum piezo-potential, we show that breaking the anti-symmetric nature of the piezopotential-force relation, for instance by using conical nanowires, can lead to better nanogenerators, piezotronic and piezophototronic devices.

A review of mechanical and electromechanical properties of piezoelectric nanowires

Piezoelectric nanowires are promising building blocks in nanoelectronic, sensing, actuation and nanogenerator systems. In spite of great progress in synthesis methods, quantitative mechanical and electromechanical characterization of these nanostructures is still limited. In this article, the state-of-the art in experimental and computational studies of mechanical and electromechanical properties of piezoelectric nanowires is reviewed with an emphasis on size effects. The review covers existing characterization and analysis methods and summarizes data reported in the literature. It also provides an assessment of research needs and opportunities. Throughout the discussion, the importance of coupling experimental and computational studies is highlighted. This is crucial for obtaining unambiguous size effects of nanowire properties, which truly reflect the effect of scaling rather than a particular synthesis route. We show that such a combined approach is critical to establish synthesis-structure-property relations that will pave the way for optimal usage of piezoelectric nanowires.

Vertically aligned CdSe nanowire arrays for energy harvesting and piezotronic devices

We demonstrated the energy harvesting potential and piezotronic effect in vertically aligned CdSe nanowire (NW) arrays for the first time. The CdSe NW arrays were grown on a mica substrate by the vapor-liquid-solid process using a CdSe thin film as seed layer and platinum as catalyst. High-resolution transmission electron microscopy image and selected area electron diffraction pattern indicate that the CdSe NWs have a wurtzite structure and growth direction along (0001). Using conductive atomic force microscopy (AFM), an average output voltage of 30.7 mV and maximum of 137 mV were obtained. To investigate the effect of strain on electron transport, the current-voltage characteristics of the NWs were studied by positioning an AFM tip on top of an individual NW. By applying normal force/stress on the NW, the Schottky barrier between the Pt and CdSe was found to be elevated due to the piezotronic effect. With the change of strain of 0.12%, a current decreased from 84 to 17 pA at 2 V bias. This paper shows that the vertical CdSe NW array is a potential candidate for future piezo-phototronic devices.

Enhanced Cu₂S/CdS coaxial nanowire solar cells by piezo-phototronic effect

Nanowire solar cells are promising candidates for powering nanosystems and flexible electronics. The strain in the nanowires, introduced during growth, device fabrication and/or application, is an important issue for piezoelectric semiconductor (like CdS, ZnO, and CdTe) based photovoltaic. In this work, we demonstrate the first largely enhanced performance of n-CdS/p-Cu(2)S coaxial nanowire photovoltaic (PV) devices using the piezo-phototronics effect when the PV device is subjected to an external strain. Piezo-phototronics effect could control the electron-hole pair generation, transport, separation, and/or recombination, thus enhanced the performance of the PV devices by as high as 70%. This effect offers a new concept for improving solar energy conversation efficiency by designing the orientation of the nanowires and the strain to be purposely introduced in the packaging of the solar cells. This study shed light on the enhanced flexible solar cells for applications in self-powered technology, environmental monitoring, and even defensive technology.

Functional electrical stimulation by nanogenerator with 58 V output voltage

We demonstrate a new type of integrated nanogenerator based on arrays of vertically aligned piezoelectric ZnO nanowires. The peak open-circuit voltage and short-circuit current reach a record high level of 58 V and 134 μA, respectively, with a maximum power density of 0.78 W/cm(3). The electric output was directly applied to a sciatic nerve of a frog, inducing innervation of the nerve. Vibrant contraction of the frog's gastrocnemius muscle is observed as a result of the instantaneous electric input from the nanogenerator.

Pyroelectric nanogenerators for harvesting thermoelectric energy

Harvesting thermoelectric energy mainly relies on the Seebeck effect that utilizes a temperature difference between two ends of the device for driving the diffusion of charge carriers. However, in an environment that the temperature is spatially uniform without a gradient, the pyroelectric effect has to be the choice, which is based on the spontaneous polarization in certain anisotropic solids due to a time-dependent temperature variation. Using this effect, we experimentally demonstrate the first application of pyroelectric ZnO nanowire arrays for converting heat energy into electricity. The coupling of the pyroelectric and semiconducting properties in ZnO creates a polarization electric field and charge separation along the ZnO nanowire as a result of the time-dependent change in temperature. The fabricated nanogenerator has a good stability, and the characteristic coefficient of heat flow conversion into electricity is estimated to be ∼0.05-0.08 Vm(2)/W. Our study has the potential of using pyroelectric nanowires to convert wasted energy into electricity for powering nanodevices.

Strain-gated piezotronic transistors based on vertical zinc oxide nanowires

Strain-gated piezotronic transistors have been fabricated using vertically aligned ZnO nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor-liquid-solid process. The gate electrode of the transistor is replaced by the internal crystal potential generated by strain, and the control over the transported current is at the interface between the nanowire and the top or bottom electrode. The current-voltage characteristics of the devices were studied using conductive atomic force microscopy, and the results show that the current flowing through the ZnO NWs can be tuned/gated by the mechanical force applied to the NWs. This phenomenon was attributed to the piezoelectric tuning of the Schottky barrier at the Au-ZnO junction, known as the piezotronic effect. Our study demonstrates the possibility of using Au droplet capped ZnO NWs as a transistor array for mapping local strain. More importantly, our design gives the possibility of fabricating an array of transistors using individual vertical nanowires that can be controlled independently by applying mechanical force/pressure over the top. Such a structure is likely to have important applications in high-resolution mapping of strain/force/pressure.

Lead-free nanogenerator made from single ZnSnO3 microbelt

We demonstrated a single-microbelt nanogenerator first made using a ZnSnO(3) microbelt that generated an output power of ∼3 nW under a compressive and releasing strain of 0.8-1%. The ZnSnO(3) nanobelts/microbelts were synthesized using a vapor transfer process at 1173 K. The X-ray diffraction pattern shows that the microbelts belong to ZnSnO(3) with rhombohedral structure. An individual ZnSnO(3) microbelt was bonded at its ends on a flexible polystyrene substrate as a nanogenerator, which gives an output voltage and current of 100 mV and 30 nA, respectively, corresponding to an energy conversion efficiency of 4.2-6.6% (based on 0.8-1% strain). Our results show that ZnSnO(3) microbelts are one of the highly promising materials for lead-free piezoelectric energy harvesting.

Taper PbZr(0.2)Ti(0.8)O3 nanowire arrays: from controlled growth by pulsed laser deposition to piezopotential measurements

Single crystalline PbZr(0.2)Ti(0.8) (PZT) nanowires arrays (NWAs) with taper morphology were epitaxially grown on SrTiO(3) (STO) substrate using pulse laser deposition. The taper morphology was attributed to the overcoating of PZT layer via a lateral growth of PZT clusters/adatoms during PZT NW growth. The growth window for PZT film or nanowire was systematically studied at varied temperatures and pressures. The proposed growth mechanism of the taper PZT NWAs was investigated from a layer by layer growth via Frank-Van Der Merwe growth, followed by a formation of three-dimensional islands via Stranski-Krastanow growth, and then axial growth on the lowest energy (001) plane with growth direction of [001] via vapor-solid growth mechanism. However, under certain conditions such as at higher or lower pressure (>400 or <200 mTorr) or substrate temperatures (>850 °C and <725 °C), formation of the PZT NWs is suppressed while the epitaxial PZT thin film via the layer-by-layer growth remains. The controllable growth directions of the PZT NWAs on (001), (110), and (111) STO substrates were demonstrated. The piezopotential of the taper PZT NWAs using a conducting atomic force microscope with the average voltage output of ~18 mV was measured. The theoretical piezopotential of a PZT NW was calculated to compare with the measured outputs, providing a comprehensively experimental and theoretical understanding of the piezoelectricity for the PZT NW.

Nanowire piezo-phototronic photodetector: theory and experimental design

The piezo-phototronic effect is about the use of the inner crystal piezoelectric potential to tune/control charge carrier generation, separation, transport and/or recombination in optoelectronic devices. In this paper, a theoretical model for describing the characteristics of a metal-nanowire-metal structured piezo-phototronic photodetector is constructed. Numerical simulations fit well to the experimental results of a CdS and ZnO nanowire based visible and UV detector, respectively.

Piezoelectric potential in vertically aligned nanowires for high output nanogenerators

In this work we analyze the coupled piezoelectric and semiconductive behavior of vertically aligned ZnO nanowires under uniform compression. The screening effect on the piezoelectric field caused by the free carriers in vertically compressed zinc oxide nanowires (NWs) has been computed by means of both analytical considerations and finite element calculations. We predict that, for typical geometries and donor concentrations, the length of the NW does not significantly influence the maximum output piezopotential because the potential mainly drops across the tip, so that relatively short NWs can be sufficient for high-efficiency nanogenerators, which is an important result for wet-chemistry fabrication of low-cost, CMOS- or MEMS-compatible nanogenerators. Furthermore, simulations reveal that the dielectric surrounding the NW influences the output piezopotential, especially for low donor concentrations. Other parameters such as the applied force, the sectional area and the donor concentration have been varied in order to understand their effects on the output voltage of the nanogenerator.

Piezotronic effect on the output voltage of P3HT/ZnO micro/nanowire heterojunction solar cells

We report the first observation of piezotronic effect on the output voltage of a flexible heterojunction solar cell. The solar cell was fabricated by contacting poly(3-hexylthiophene) (P3HT) with one end of a ZnO micro/nanowire to form a p-n heterojunction on a flexible polystyrene (PS) substrate. The open-circuit voltage V(oc) of the solar cell was characterized by tuning the strain-induced polarization charges at the interface between ZnO and P3HT. The experimental data were understood based on the modification of the band structure at the p-n junction by the piezopotential, which is referred as a result of the piezotronic effect. This study not only provides an in-depth understanding about the effect but also is useful for maximizing the output of a solar cell using wurtzite structured materials.

Anisotropic outputs of a nanogenerator from oblique-aligned ZnO nanowire arrays

We studied the dependence of the output of the piezoelectric nanogenerator (NG) on the inclining orientation of the ZnO nanowire arrays (NWAs). The oblique-aligned NWAs were grown by combing a modified oblique-angle sputtering technique for preparing the seed layer and hydrothermal growth. The piezoelectric output of the NWAs was studied by scanning the tip of an atomic force microscope along four different directions in reference to the inclining direction of the NWs. The statistical outputs were analyzed in reference to the theoretically calculated piezopotential distribution in the NWs. Our study provides in-depth understanding about the performance of NGs.

Fundamental theory of piezotronics

Due to polarization of ions in crystals with noncentral symmetry, such as ZnO, GaN, and InN, a piezoelectric potential (piezopotential) is created in the crystal when stress is applied. Electronics fabricated using the inner-crystal piezopotential as a gate voltage to tune or control the charge transport behavior across a metal/semiconductor interface or a p-n junction are called piezotronics. This is different from the basic design of complimentary metal oxide semiconductor (CMOS) field-effect transistors and has applications in force and pressure triggered or controlled electronic devices, sensors, microelectromechanical systems (MEMS), human-computer interfacing, nanorobotics, and touch-pad technologies. Here, the theory of charge transport in piezotronic devices is investigated. In addition to presenting the formal theoretical frame work, analytical solutions are presented for cases including metal-semiconductor contact and p-n junctions under simplified conditions. Numerical calculations are given for predicting the current-voltage characteristics of a general piezotronic transistor: metal-ZnO nanowire-metal device. This study provides important insight into the working principles and characteristics of piezotronic devices, as well as providing guidance for device design.

Piezotronic nanowire-based resistive switches as programmable electromechanical memories

We present the first piezoelectrically modulated resistive switching device based on piezotronic ZnO nanowire (NW), through which the write/read access of the memory cell is programmed via electromechanical modulation. Adjusted by the strain-induced polarization charges created at the semiconductor/metal interface under externally applied deformation by the piezoelectric effect, the resistive switching characteristics of the cell can be modulated in a controlled manner, and the logic levels of the strain stored in the cell can be recorded and read out, which has the potential for integrating with NEMS technology to achieve micro/nanosystems capable for intelligent and self-sufficient multidimensional operations.

Self-powered system with wireless data transmission

We demonstrate the first self-powered system driven by a nanogenerator (NG) that works wirelessly and independently for long-distance data transmission. The NG was made of a free cantilever beam that consisted of a five-layer structure: a flexible polymer substrate, ZnO nanowire textured films on its top and bottom surfaces, and electrodes on the surfaces. When it was strained to 0.12% at a strain rate of 3.56% S(-1), the measured output voltage reached 10 V, and the output current exceeded 0.6 μA (corresponding power density 10 mW/cm(3)). A system was built up by integrating a NG, rectification circuit, capacitor for energy storage, sensor, and RF data transmitter. Wireless signals sent out by the system were detected by a commercial radio at a distance of 5-10 m. This study proves the feasibility of using ZnO nanowire NGs for building self-powered systems, and its potential application in wireless biosensing, environmental/infrastructure monitoring, sensor networks, personal electronics, and even national security.

Piezopotential gated nanowire--nanotube hybrid field-effect transistor

We report the first piezoelectric potential gated hybrid field-effect transistors based on nanotubes and nanowires. The device consists of single-walled carbon nanotubes (SWNTs) on the bottom and crossed ZnO piezoelectric fine wire (PFW) on the top with an insulating layer between. Here, SWNTs serve as a carrier transport channel, and a single-crystal ZnO PFW acts as the power-free, contact-free gate or even an energy-harvesting component later on. The piezopotential created by an external force in the ZnO PFW is demonstrated to control the charge transport in the SWNT channel located underneath. The magnitude of the piezopotential in the PFW at a tensile strain of 0.05% is measured to be 0.4-0.6 V. The device is a unique coupling between the piezoelectric property of the ZnO PFW and the semiconductor performance of the SWNT with a full utilization of its mobility. The newly demonstrated device has potential applications as a strain sensor, force/pressure monitor, security trigger, and analog-signal touch screen.

Optimizing the power output of a ZnO photocell by piezopotential

Using a metal-semiconductor-metal back-to-back Schottky contacted ZnO microwire device, we have demonstrated the piezoelectric effect on the output of a photocell. An externally applied strain produces a piezopotential in the microwire, which tunes the effective height of the Schottky barrier (SB) at the local contact, consequently changing the transport characteristics of the device. An equivalent circuit model together with the thermionic emission theory has explained the four kinds of relationships observed between the photocurrent and the applied strain. Our study shows the possibility of maximizing the output of a photocell by controlling strain in the device.

GaN nanowire arrays for high-output nanogenerators

Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is approximately 62 degrees . The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs.

Designing the electric transport characteristics of ZnO micro/nanowire devices by coupling piezoelectric and photoexcitation effects

The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/nanowire device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal-ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO nanowires, which could be potentially useful for fabricating piezo-phototronic devices.

Piezoelectric potential gated field-effect transistor based on a free-standing ZnO wire

We report an external force triggered field-effect transistor based on a free-standing piezoelectric fine wire (PFW). The device consists of an Ag source electrode and an Au drain electrode at two ends of a ZnO PFW, which were separated by an insulating polydimethylsiloxane (PDMS) thin layer. The working principle of the sensor is proposed based on the piezoelectric potential gating effect. Once subjected to a mechanical impact, the bent ZnO PFW cantilever creates a piezoelectric potential distribution across it width at its root and simultaneously produces a local reverse depletion layer with much higher donor concentration than normal, which can dramatically change the current flowing from the source electrode to drain electrode when the device is under a fixed voltage bias. Due to the free-standing structure of the sensor device, it has a prompt response time less than 20 ms and quite high and stable sensitivity of 2%/microN. The effect from contact resistance has been ruled out.

Encapsulation of 2-3-nm-sized ZnO quantum dots in a SiO2 matrix and observation of negative photoconductivity

Quantum dots (QDs) of ZnO of 2-4 nm size have been encapsulated within a SiO(2) matrix using aqueous chemically grown ZnO nanoparticles in a precursor of tetraethyl orthosilicate. The microstructure shows almost a uniform embedment of the QDs in the SiO(2) matrix, resulting in a ZnO QDs-SiO(2) composite structure. The photocurrent transients of the composite show an instant fall in the current followed by an exponential decay under ultraviolet (UV) illumination, causing negative photoconductivity (NPC), in contrast to the positive photoconductivity in only ZnO nanoparticles. The interface defect states due to the presence of the SiO(2) network around ZnO act as charge trap centers for the photoexcited electrons and are responsible for the NPC. The presence of interface-trapped charges under UV illumination has been further confirmed from capacitance-voltage measurements.

Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS.

Piezoelectric nanogenerator using p-type ZnO nanowire arrays

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator.