Direct growth of bilayer graphene on SiO₂ substrates by carbon diffusion through nickel

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication

Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication.

Towards a general growth model for graphene CVD on transition metal catalysts

The chemical vapour deposition (CVD) of graphene on three polycrystalline transition metal catalysts, Co, Ni and Cu, is systematically compared and a first-order growth model is proposed which can serve as a reference to optimize graphene growth on any elemental or alloy catalyst system. Simple thermodynamic considerations of carbon solubility are insufficient to capture even basic growth behaviour on these most commonly used catalyst materials, and it is shown that kinetic aspects such as carbon permeation have to be taken into account. Key CVD process parameters are discussed in this context and the results are anticipated to be highly useful for the design of future strategies for integrated graphene manufacture.

One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates

Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step, transfer-free methods have a simpler procedure and a lower cost. Thus, transfer-free methods have considerable potential to meet the industrial and commercial demands of production methods. However, some limitations of the current transfer-free methods must be overcome, such as the high temperatures encountered during production, the relatively long manufacturing times, incompatibilities for both rigid and flexible substrates, and an inability to extend the process to other two-dimensional (2-D) atomic crystals. In this work, a room-temperature rubbing method is developed for the rapid transfer-free production of defect-free polycrystalline graphene on rigid and flexible substrates. Starting with inexpensive commercially obtained graphite powder, mono- and few-layer graphene can be fabricated directly on various substrates, with an average production time of less than one minute (from raw graphite to graphene on the substrate). Importantly, this method can be extended to other 2-D atomic crystals.

Direct growth of few layer graphene on SiO2 substrate by low energy carbon ion implantation

A simple method that enables the direct fabrication of few layer graphene on SiO₂/Si substrates with precise control of layer thickness by implantation of C ions is explored.

A study of the growth-time effect on graphene layer number based on a Cu–Ni bilayer catalyst system

Graphene layer number is controlled by changing Cu–Ni ratio and growth time. Single- and few-layer graphene are formed separately on Cu- and Ni-rich catalysts. The growth of bilayer graphene is attributed to the synergic effect of Cu and Ni (1 : 1).

Simultaneous growth of monolayer graphene on Ni–Cu bimetallic catalyst by atmospheric pressure CVD process

CVD is the most efficient way to produce wafer scale monolayer graphene.

Value-added Synthesis of Graphene: Recycling Industrial Carbon Waste into Electrodes for High-Performance Electronic Devices

We have developed a simple, scalable, transfer-free, ecologically sustainable, value-added method to convert inexpensive coal tar pitch to patterned graphene films directly on device substrates. The method, which does not require an additional transfer process, enables direct growth of graphene films on device substrates in large area. To demonstrate the practical applications of the graphene films, we used the patterned graphene grown on a dielectric substrate directly as electrodes of bottom-contact pentacene field-effect transistors (max. field effect mobility ~0.36 cm²·V⁻¹·s⁻¹), without using any physical transfer process. This use of a chemical waste product as a solid carbon source instead of commonly used explosive hydrocarbon gas sources for graphene synthesis has the dual benefits of converting the waste to a valuable product, and reducing pollution.

CoxNi100-x nanoparticles encapsulated by curved graphite layers: controlled in situ metal-catalytic preparation and broadband microwave absorption

We report a one-step approach for preparing dispersive CoxNi100-x nanoparticles completely encapsulated by curved graphite layers. The nanoparticles were prepared by evaporating Co-Ni alloys and the shell of graphite layers was formed by in situ metal-catalytic growth on the surface of nanoparticles whose layer number was controlled by tuning the Co content of the alloys. By modulating the composition of the magnetic core and the layer number of the shell, the magnetic and dielectric properties of these core/shell structures are simultaneously optimized and their permeability and permittivity were improved to obtain the enhanced electromagnetic match. As a result, the bandwidth of reflection loss (RL) exceeding -20 dB (99% absorption) of the nanocapsules is 9.6 GHz for S1, 12.8 GHz for S2, 13.5 GHz for S3 and 14.2 GHz for S4. The optimal RL value reaches -53 dB at 13.2 GHz for an absorber thickness of 2.55 mm. An optimized impedance match by controlling the growth of the core and shell is responsible for this extraordinary microwave absorption.

Observation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chemical vapor deposition

Although there are already many efforts to investigate the electronic structures of twisted bilayer graphene, a definitive conclusion has not yet been reached. In particular, it is still a controversial issue whether a tunable electrical (or transport) bandgap exists in twisted bilayer graphene film until now. Herein, for the first time, it has been demonstrated that a tunable electrical bandgap can be opened in the twisted bilayer graphene by the combination effect of twist and vertical electrical fields. In addition, we have also developed a facile chemical vapor deposition method to synthesize large-area twisted bilayer graphene by introducing decaborane as the cocatalyst for decomposing methane molecules. The growth mechanism is demonstrated to be a defined-seeding and self-limiting process. This work is expected to be beneficial to the fundamental understanding of both the growth mechanism for bilayer graphene on Cu foil and more significantly, the electronic structures of twisted bilayer graphene.

Ultrafast Graphene Growth on Insulators via Metal-Catalyzed Crystallization by a Laser Irradiation Process: From Laser Selection, Thickness Control to Direct Patterned Graphene Utilizing Controlled Layer Segregation Process

Despite the vast progress in chemical vapor deposition (CVD) graphene grown on metals, the transfer process is still a major bottleneck, being not devoid of wrinkles and polymer residues. In this paper, a structure is introduced to directly synthesize few layer graphene on insulating substrates by a laser irradiation heating process. The segregation of graphene layers can be manipulated by tuning the metal layer thickness and laser power at different scanning rates. Graphene deposition and submicrometer patterning resolution can be achieved by patterning the intermediate metal layer using standard lithography methods in order to overcome the scalability issue regardless the resolution of the laser beam. The systematic analysis of the process based on the formation of carbon microchannels by the laser irradiation process can be extended to several materials, thicknesses, and methods. Furthermore, hole and electron mobilities of 500 and 950 cm(2) V(-1) s(-1) are measured. The laser-synthesized graphene is a step forward along the direct synthesis route for graphene on insulators that meets the criteria for photonics and electronics.

Macroscopic, freestanding, and tubular graphene architectures fabricated via thermal annealing

Manipulation of individual graphene sheets/films into specific architectures at macroscopic scales is crucially important for practical uses of graphene. We present herein a versatile and robust method based on annealing of solid carbon precursors on nickel templates and thermo-assisted removal of poly(methyl methacrylate) under low vacuum of ∼0.6 Pa for fabrication of macroscopic, freestanding, and tubular graphene (TG) architectures. Specifically, the TG architectures can be obtained as individual and woven tubes with a diameter of ∼50 μm, a wall thickness in the range of 2.1-2.9 nm, a density of ∼1.53 mg·cm(-3), a thermal stability up to 600 °C in air, an electrical conductivity of ∼1.48 × 10(6) S·m(-1), and field emission current densities on the order of 10(4) A·cm(-2) at low applied electrical fields of 0.6-0.7 V·μm(-1). These properties show great promise for applications in flexible and lightweight electronics, electron guns, or X-ray tube sources.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Rebar graphene from functionalized boron nitride nanotubes

The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties.

Synthesizing graphenes directly on SiO2/Si in open environments by a dual flame method

In this work, a simple, productive and low cost method is reported for synthesizing few-layer graphenes directly on SiO₂/Si substrates.

EDTA-induced self-assembly of 3D graphene and its superior adsorption ability for paraquat using a teabag

In the past two years, three-dimensional graphene (3DG) was introduced to the environmental treatment area as a promising new material. Despite much progress in its synthesis and applications, 3DG is still limited in terms of green large-scale synthesis and practical environmental applications. In this work, a 3DG synthetic method was developed at 95 °C in an EDTA-induced self-assembly process. Because little EDTA was found to be consumed during synthesis, which might be due to its great stability and poor reducibility, 3DG with complete structure can be successively obtained by reusing the EDTA solution more than 10 times. Furthermore, 3DG was found to possess a superior adsorption capacity of 119 mg g(-1) (pH 6.0) for paraquat, a highly toxic herbicide with positive charges and a conjugated system of π bonds in its molecular structure. The adsorption capacity was much higher than those in classic paraquat adsorbents, such as clay and activated carbon. To address the problem of 3DG damage by stirring, a pyramid-shaped nylon teabag was adopted to protect the soft hydrogel during the repeated adsorption-desorption processes. After five cycles, the 3DG teabag still maintained 88% of the initial adsorption capacity. This facile method may be easily applied in other environmental treatment conditions.

Equilibrium chemical vapor deposition growth of Bernal-stacked bilayer graphene

Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.

Atomic diffusion within individual gold nanocrystal

Due to their excess surface free energy and structural instabilities, nanoparticles exhibit interesting physical and chemical properties. There has been an ever-growing interest in investigating these properties, driven by the desire to further miniaturize electronic devices, develop new functional materials and catalysts. Here, the intriguing question of how diffusion evolves in a single nanoparticle is investigated by measuring the spatial and temporal variations of the diffracted coherent X-ray intensity during copper diffusion into a gold nanocrystal. Dislocation loops formed from the insertion of single layer of extra atoms between neighbouring gold host lattice planes are detected. Au-Cu alloy channels are found to penetrate the nanocrystal due to the differential diffusion rate along different directions. With the advent of higher brilliance sources and free-electron-lasers, Bragg Coherent X-ray Diffraction Imaging can play an important role in unveiling atomic behaviours in three dimensions for nanomaterials during various fundamental processes.

Direct deposition of uniform high-κ dielectrics on graphene

High quality High-κ dielectrics on graphene were achieved by atomic layer deposition directly using remote oxygen plasma surface pretreatment. The uniform coverage on graphene is illustrated by atomic force microscopy and confirmed by high resolution transmission microscopy. The possible surface lattice damage induced by plasma is limited and demonstrated by Raman spectra. The excellent Hall mobility for graphene is maintained at 2.7 × 10³ cm²/V·s, which only decreases by 25%. The excellent electrical characteristic of dielectric presents the low leakage current density and high breakdown voltage. Moreover, the technology is compatible with the traditional CMOS process which brings much possibility to future graphene devices.

Direct growth of patterned graphene on SiO2 substrates without the use of catalysts or lithography

We demonstrate a one-step fabrication of patterned graphene on SiO2 substrates through a process free from catalysts, transfer, and lithography. By simply placing a shadow mask during the plasma enhanced chemical vapor deposition (PECVD) of graphene, an arbitrary shape of graphene can be obtained on SiO2 substrate. The formation of graphene underneath the shadow mask was effectively prevented by the low-temperature, catalyst-free process. Growth conditions were optimized to form polycrystalline graphene on SiO2 substrates and the crystalline structure was characterized by Raman spectroscopy and transmission electron microscopy (TEM). Patterned graphene on SiO2 functions as a field-effect device by itself. Our method is compatible with present device processing techniques, and should be highly desirable for the proliferation of graphene applications.

Low vacuum annealing of cellulose acetate on nickel towards transparent conductive CNT-graphene hybrid films

We report a versatile method based on low vacuum annealing of cellulose acetate on nickel (Ni) surface for rapid fabrication of graphene and carbon nanotube (CNT)-graphene hybrid films with tunable properties. Uniform films mainly composed of tri-layer graphene can be achieved via a surface precipitation of dissociated carbon at 800 °C for 30 seconds under vacuum conditions of ∼0.6 Pa. The surface precipitation process is further found to be efficient for joining the precipitated graphene with pre-coated CNTs on the Ni surface, consequently, generating the hybrid films. As expected, the hybrid films exhibit substantial opto-electrical and field electron emission properties superior to their individual counterparts. The finding suggests a promising route to hybridize the graphene with diverse nanomaterials for constructing novel hybrid materials with improved performances.

Direct fabrication of graphene on SiO2 enabled by thin film stress engineering

We demonstrate direct production of graphene on SiO2 by CVD growth of graphene at the interface between a Ni film and the SiO2 substrate, followed by dry mechanical delamination of the Ni using adhesive tape. This result is enabled by understanding of the competition between stress evolution and microstructure development upon annealing of the Ni prior to the graphene growth step. When the Ni film remains adherent after graphene growth, the balance between residual stress and adhesion governs the ability to mechanically remove the Ni after the CVD process. In this study the graphene on SiO2 comprises micron-scale domains, ranging from monolayer to multilayer. The graphene has >90% coverage across centimeter-scale dimensions, limited by the size of our CVD chamber. Further engineering of the Ni film microstructure and stress state could enable manufacturing of highly uniform interfacial graphene followed by clean mechanical delamination over practically indefinite dimensions. Moreover, our findings suggest that preferential adhesion can enable production of 2-D materials directly on application-relevant substrates. This is attractive compared to transfer methods, which can cause mechanical damage and leave residues behind.

Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: from controllable growth to material characterization

A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100 °C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ~12 nm at growth temperature of 1000 °C to ~32 nm at growth temperature of 1100 °C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

An electronic structure perspective of graphene interfaces

The unusual electronic structure of graphene characterized by linear energy dispersion of bands adjacent to the Fermi level underpins its remarkable transport properties. However, for practical device integration, graphene will need to be interfaced with other materials: 2D layered structures, metals (as ad-atoms, nanoparticles, extended surfaces, and patterned metamaterial geometries), dielectrics, organics, or hybrid structures that in turn are constituted from various inorganic or organic components. The structural complexity at these nanoscale interfaces holds much promise for manifestation of novel emergent phenomena and provides a means to modulate the electronic structure of graphene. In this feature article, we review the modifications to the electronic structure of graphene induced upon interfacing with disparate types of materials with an emphasis on iterative learnings from theoretical calculations and electronic spectroscopy (X-ray absorption fine structure (XAFS) spectroscopy, scanning transmission X-ray microscopy (STXM), angle-resolved photoemission spectroscopy (ARPES), and X-ray magnetic circular dichroism (XMCD)). We discuss approaches for engineering and modulating a bandgap in graphene through interfacial hybridization, outline experimental methods for examining electronic structure at interfaces, and overview device implications of engineered interfaces. A unified view of how geometric and electronic structure are correlated at interfaces will provide a rational means for designing heterostructures exhibiting emergent physical phenomena with implications for plasmonics, photonics, spintronics, and engineered polymer and metal matrix composites.

Graphene-nickel interfaces: a review

Graphene on nickel is a prototypical example of an interface between graphene and a strongly interacting metal, as well as a special case of a lattice matched system. The chemical interaction between graphene and nickel is due to hybridization of the metal d-electrons with the π-orbitals of graphene. This interaction causes a smaller separation between the nickel surface and graphene (0.21 nm) than the typical van der Waals gap-distance between graphitic layers (0.33 nm). Furthermore, the physical properties of graphene are significantly altered. Main differences are the opening of a band gap in the electronic structure and a shifting of the π-band by ∼2 eV below the Fermi-level. Experimental evidence suggests that the ferromagnetic nickel induces a magnetic moment in the carbon. Substrate induced geometric and electronic changes alter the phonon dispersion. As a consequence, monolayer graphene on nickel does not exhibit a Raman spectrum. In addition to reviewing these fundamental physical properties of graphene on Ni(111), we also discuss the formation and thermal stability of graphene and a surface-confined nickel-carbide. The fundamental growth mechanisms of graphene by chemical vapor deposition are also described. Different growth modes depending on the sample temperature have been identified in ultra high vacuum surface science studies. Finally, we give a brief summary for the synthesis of more complex graphene and graphitic structures using nickel as catalyst and point out some potential applications for graphene-nickel interfaces.

Direct growth of graphene film on germanium substrate

Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS).

One-step synthesis of carbon nanosheets converted from a polycyclic compound and their direct use as transparent electrodes of ITO-free organic solar cells

Through a catalyst- and transfer-free process, we fabricated indium tin oxide (ITO)-free organic solar cells (OSCs) using a carbon nanosheet (CNS) with properties similar to graphene. The morphological and electrical properties of the CNS derived from a polymer of intrinsic microporosity-1 (PIM-1), which is mainly composed of several aromatic hydrocarbons and cycloalkanes, can be easily controlled by adjusting the polymer concentration. The CNSs, which are prepared by simple spin-coating and heat-treatment on a quartz substrate, are directly used as the electrodes of ITO-free OSCs, showing a high efficiency of approximately 1.922% under 100 mW cm(-2) illumination and air mass 1.5 G conditions. This catalyst- and transfer-free approach is highly desirable for electrodes in organic electronics.

Engineered Si electrode nanoarchitecture: a scalable postfabrication treatment for the production of next-generation Li-ion batteries

A novel, economical flash heat treatment of the fabricated silicon based electrodes is introduced to boost the performance and cycle capability of Li-ion batteries. The treatment reveals a high mass fraction of Si, improved interfacial contact, synergistic SiO2/C coating, and a conductive cellular network for improved conductivity, as well as flexibility for stress compensation. The enhanced electrodes achieve a first cycle efficiency of ∼84% and a maximum charge capacity of 3525 mA h g(-1), almost 84% of silicon's theoretical maximum. Further, a stable reversible charge capacity of 1150 mA h g(-1) at 1.2 A g(-1) can be achieved over 500 cycles. Thus, the flash heat treatment method introduces a promising avenue for the production of industrially viable, next-generation Li-ion batteries.

Highly dispersed graphene ribbons produced from ZnO–C core–shell nanorods and their use as a filler in polyimide composites

Long and few-layer thickness graphene ribbons (GRs) were fabricated through an efficient process from a well-ordered array of ZnO–C core–shell hexagonal nanorods that were formed by thermally heating zinc acetate dihydrate in a sealed chamber.

Controllable atmospheric pressure growth of mono-layer, bi-layer and tri-layer graphene

A coherent three-step growth method has been developed for mono-, bi- and tri-layer graphene with coverage of ∼90% at atmospheric pressure on Cu foil.

Large scale production of highly-qualified graphene by ultrasonic exfoliation of expanded graphite under the promotion of (NH4)2CO3 decomposition

Highly-qualified graphene was prepared by the ultrasonic exfoliation of commercial expanded graphite (EG) under the promotion of (NH4)2CO3 decomposition. The yield of graphene from the first exfoliation is 7 wt%, and it can be increased to more than 65 wt% by repeated exfoliations. Atomic force microscopy, x-ray photoelectron spectroscopy and Raman analysis show that the as-prepared graphene only has a few defects or oxides, and more than 95% of the graphene flakes have a thickness of ~1 nm. The electrochemical performance of the as-prepared graphene is comparable to reduced graphene oxide in the determination of dopamine (DA) from the mixed solution of ascorbic acid, uric acid and DA. These results show that the decomposition of (NH4)2CO3 molecules in the EG layers under ultrasonication promotes the exfoliation of graphite and provides a low-priced route for large scale production of highly-quality graphene.

Graphene: powder, flakes, ribbons, and sheets

Graphene's unique physical and electrical properties (high tensile strength, Young's modulus, electron mobility, and thermal conductivity) have led to its nickname of "super carbon." Graphene research involves the study of several different physical forms of the material: powders, flakes, ribbons, and sheets and others not yet named or imagined. Within those forms, graphene can include a single layer, two layers, or ≤10 sheets of sp² carbon atoms. The chemistry and applications available with graphene depend on both the physical form of the graphene and the number of layers in the material. Therefore the available permutations of graphene are numerous, and we will discuss a subset of this work, covering some of our research on the synthesis and use of many of the different physical and layered forms of graphene. Initially, we worked with commercially available graphite, with which we extended diazonium chemistry developed to functionalize single-walled carbon nanotubes to produce graphitic materials. These structures were soluble in common organic solvents and were better dispersed in composites. We developed an improved synthesis of graphene oxide (GO) and explored how the workup protocol for the synthesis of GO can change the electronic structure and chemical functionality of the GO product. We also developed a method to remove graphene layers one-by-one from flakes. These powders and sheets of GO can serve as fluid loss prevention additives in drilling fluids for the oil industry. Graphene nanoribbons (GNRs) combine small width with long length, producing valuable electronic and physical properties. We developed two complementary syntheses of GNRs from multiwalled carbon nanotubes: one simple oxidative method that produces GNRs with some defects and one reductive method that produces GNRs that are less defective and more electrically conductive. These GNRs can be used in low-loss, high permittivity composites, as conductive reinforcement coatings on Kevlar fibers and in the fabrication of large area transparent electrodes. Using solid carbon sources such as polymers, food, insects, and waste, we can grow monolayer and bilayer graphene directly on metal catalysts, and carbon-sources containing nitrogen can produce nitrogen-doped graphene. The resulting graphene can be transferred to other surfaces, such as metal grids, for potential use in transparent touch screens for applications in personal electronics and large area photovoltaic devices. Because the transfer of graphene from one surface to another can lead to defects, low yields, and higher costs, we have developed methods for growing graphene directly on the substrates of interest. We can also produce patterned graphene to make GNRs or graphane/graphene superlattices within a single sheet. These superlattices could have multiple functions for use in sensors and other devices. This Account only touches upon this burgeoning area of materials chemistry, and the field will continue to expand as researchers imagine new forms and applications of graphene.

Introducing carbon diffusion barriers for uniform, high-quality graphene growth from solid sources

Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.

Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking

Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz.

Scalable and direct growth of graphene micro ribbons on dielectric substrates

Here we report on a scalable and direct growth of graphene micro ribbons on SiO₂ dielectric substrates using a low temperature chemical vapor deposition. Due to the fast annealing at low temperature and dewetting of Ni, continuous few-layer graphene micro ribbons grow directly on bare dielectric substrates through Ni assisted catalytic decomposition of hydrocarbon precursors. These high quality graphene micro ribbons exhibit low sheet resistance of ~700 Ω −2100 Ω, high on/off current ratio of ~3, and high carrier mobility of ~655 cm²V⁻¹s⁻¹ at room temperature, all of which have shown significant improvement over other lithography patterned CVD graphene micro ribbons. This direct approach can in principle form graphene ribbons of any arbitrary sizes and geometries. It allows for a feasible methodology towards better integration with semiconductor materials for interconnect electronics and scalable production for graphene based electronic and optoelectronic applications where the electrical gating is the key enabling factor.

Thermal transformation of carbon hybrid materials to graphene films

We demonstrate a simple approach to grow graphene films on polycrystalline nickel (Ni) foils, in which polycrystalline carbon hybrid materials (CHMs) were used in sandwich structures (molybdenum-CHMs-Ni-molybdenum) as a carbon source for graphene, and pressure was then applied to the sandwich. The CHMs were transformed into single as well as few layer graphene by a segregation-precipitation process. The applied pressure not only increased the density of the graphene films but also reduced the vaporization of dissociated carbon molecules of the CHMs. We have explored the possibility to grow graphene films in low vacuum (5 × 10(-1) Pa) at relatively low temperatures (≤750 °C). The formation of the graphene films at 750 °C is simple and cost-effective and can be scaled up.

Investigation of non-segregation graphene growth on Ni via isotope-labeled alcohol catalytic chemical vapor deposition

Here we present CVD growth of graphene on Ni and investigate the growth mechanism using isotopically labeled (13)C-ethanol as the precursor. Results show that during low-pressure alcohol catalytic CVD (LP-ACCVD), a growth time of less than 30 s yields graphene films with high surface coverage (>80%). Moreover, when isotopically labeled ethanol precursors were sequentially introduced, Raman mapping revealed that both (12)C and (13)C graphene flakes exist. This shows that even at high temperature (∼900 °C) the graphene flakes form independently, suggesting a different growth mechanism for ethanol-derived graphene on Ni from the segregation process for methane-derived graphene. We interpret this growth mechanism using a direct surface-adsorptive growth model in which small carbon fragments catalyzed from ethanol decomposition products first nucleate at metal step edges or grain boundaries to initiate graphene growth, and then expand over the entire metal surface.

Thinning of large-area graphene film from multilayer to bilayer with a low-power CO2 laser

Bilayer graphene has attracted a great deal of attention for many electronic and optical applications. Although large-area bilayer graphene can be synthesized by chemical vapor deposition (CVD), multilayer growth often occurs and subsequent processes are required to obtain uniform bilayer films. We report an efficient way of thinning multilayer graphene film by low-power CO2 laser irradiation in vacuum. With a laser power density of ~10(2) W cm(-2), pristine graphene film of 4-5 layers can be thinned to a bilayer free of defects in 30 s. Contrary to previous laser-assisted graphene thinning processes, which reduced graphene layers precisely and locally with a high power density and a small beam diameter, our approach enables high-efficiency thinning of large-area graphene film whilst using a significantly reduced power density and an increased laser beam diameter.

Few layer graphene to graphitic films: infrared photoconductive versus bolometric response

We report a comparative study of the performance of infrared (IR) photoconductive and bolometric detectors fabricated from few layer graphene (FLG) to graphitic films obtained by different methods. FLG films grown directly on insulating substrates with the aid of residual hydrocarbons and polymethylmethacrylate (PMMA) carbon sources show an IR photoresponse of 73% which is far higher compared to the FLG films (6-14%) obtained by CVD and Scotch tape methods. The photoconductive nature of FLG films is due to generation of photoexcited charge carriers. On the other hand, the photoresponse of the bulk graphitic films is bolometric in nature where the resistance changes are due to thermal effects. The IR photoresponse from these graphitic films is correlated with the Raman peak intensities which are very sensitive to the nature of the FLG.

Field effect transistors and photodetectors based on nanocrystalline graphene derived from electron beam induced carbonaceous patterns

We describe a transfer-free method for the fabrication of nanocrystalline graphene (nc-graphene) on SiO(2) substrates directly from patterned carbonaceous deposits. The deposits were produced from the residual hydrocarbons present in the vacuum chamber without any external source by using an electron beam induced carbonaceous deposition (EBICD) process. Thermal treatment under vacuum conditions in the presence of Ni catalyst transformed the EBIC deposit into nc-graphene patterns, confirmed using Raman and TEM analysis. The nc-graphene patterns have been employed as an active p-type channel material in a field effect transistor (FET) which showed a hole mobility of ~90 cm(2) V(-1) s(-1). The nc-graphene also proved to be suitable material for IR detection.

High-yield chemical vapor deposition growth of high-quality large-area AB-stacked bilayer graphene

Bernal-stacked (AB-stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electric field. Mechanical exfoliation can be used to produce AB-stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB- and randomly stacked structures. Herein we report a rational approach to produce large-area high-quality AB-stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H(2)/CH(4) ratio in a low-pressure CVD process to enable the continued growth of bilayer graphene. A high-temperature and low-pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90%) and high coverage (up to 99%). The electrical transport studies demonstrate that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB-stacked bilayer graphene with the highest carrier mobility exceeding 4000 cm(2)/V · s at room temperature, comparable to that of the exfoliated bilayer graphene.

New routes to graphene, graphene oxide and their related applications

Recent research has focused upon the growth of the graphene, with a concentration on the synthesis of graphene and related materials using both solution processes and high temperature chemical vapor and solid growth methods. Protocols to prepare high aspect ratio graphene nanoribbons from multi-walled carbon nanotubes have been developed as well as techniques to grow high quality graphene for electronics and other applications where high quality is needed. Graphene materials have been manipulated and modified for use in applications such as transparent electrodes, field effect transistors, thin film transistors and energy storage devices. This review summarizes the development of graphene and related materials.

Graphene-based flexible and stretchable thin film transistors

Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

Controlled synthesis of bilayer graphene on nickel

We report a uniform and low-defect synthesis of bilayer graphene on evaporated polycrystalline nickel films. We used atmospheric pressure chemical vapor deposition with ultra-fast substrate cooling after exposure to methane at 1,000°C. The optimized process parameters, i.e., growth time, annealing profile and flow rates of various gases, are reported. By using Raman spectroscopy mapping, the ratio of 2D to G peak intensities (I2D/IG) is in the range of 0.9 to 1.6 over 96% of the 200 μm × 200 μm area. Moreover, the average ratio of D to G peak intensities (ID/IG) is about 0.1.

Synthesis of conducting transparent few-layer graphene directly on glass at 450 °C

Post-growth transfer and high growth temperature are two major hurdles that research has to overcome to get graphene out of research laboratories. Here, using a plasma-enhanced chemical vapour deposition process, we demonstrate the large-area formation of continuous transparent graphene layers at temperatures as low as 450 °C. Our few-layer graphene grows at the interface between a pre-deposited 200 nm Ni catalytic film and an insulating glass substrate. After nickel etching, we are able to measure the optical transmittance of the layers without any transfer. We also measure their sheet resistance directly and after inkjet printing of electrical contacts: sheet resistance is locally as low as 500 Ω sq⁻¹. Finally the samples equipped with printed contacts appear to be efficient humidity sensors.