Spin-torque building blocks

Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation

Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the nanoscale magnetic tunneling junction (MTJ), is thought to be radiation hard, making it attractive for space and nuclear technology applications. However, studies on the effects of ionizing radiation on the STT-MRAM writing process are lacking for MTJs with perpendicular magnetic anisotropy (pMTJs) required for scalable applications. Particularly, the question of the impact of extreme total ionizing dose on perpendicular magnetic anisotropy, which plays a crucial role on thermal stability and critical writing current, remains open. Here we report measurements of the impact of high doses of gamma and neutron radiation on nanoscale pMTJs used in STT-MRAM. We characterize the tunneling magnetoresistance, the magnetic field switching, and the current-induced switching before and after irradiation. Our results demonstrate that all these key properties of nanoscale MTJs relevant to STT-MRAM applications are robust against ionizing radiation. Additionally, we perform experiments on thermally driven stochastic switching in the gamma ray environment. These results indicate that nanoscale MTJs are promising building blocks for radiation-hard non-von Neumann computing.

Detecting quadrupole: a hidden source of magnetic anisotropy for Manganese alloys

Mn-based alloys exhibit unique properties in the spintronics materials possessing perpendicular magnetic anisotropy (PMA) beyond the Fe and Co-based alloys. It is desired to figure out the quantum physics of PMA inherent to Mn-based alloys, which have never been reported. Here, the origin of PMA in ferrimagnetic Mn_{3− δ} Ga ordered alloys is investigated to resolve antiparallel-coupled Mn sites using x-ray magnetic circular and linear dichroism (XMCD/XMLD) and a first-principles calculation. We found that the contribution of orbital magnetic moments in PMA is small from XMCD and that the finite quadrupole-like orbital distortion through spin-flipped electron hopping is dominant from XMLD and theoretical calculations. These findings suggest that the spin-flipped orbital quadrupole formations originate from the PMA in Mn_{3− δ} Ga and bring the paradigm shift in the researches of PMA materials using x-ray magnetic spectroscopies.

Intrinsic Mixed Bloch-Néel Character and Chirality of Skyrmions in Asymmetric Epitaxial Trilayers

Recent advances in the stabilization and manipulation of chiral magnetization configurations in systems consisting of alternating atomic layers of ferromagnetic and nonmagnetic materials hold promise for innovation in spintronics technology. The low dimensionality of the systems promotes spin orbit driven interfacial effects like antisymmetric Dzyaloshinskii-Moriya interactions (DMI) and surface magnetic anisotropy, whose relative strengths may be tuned to achieve stable nanometer sized magnetic objects with fixed chirality. While in most of the cases this is obtained by engineering complex multilayers stacks in which interlayer dipolar fields become important, we consider here a simple epitaxial trilayer in which a ferromagnet, with variable thickness, is embedded between a heavy metal and graphene. The latter enhances the perpendicular magnetic anisotropy of the system, promotes a Rashba-type DMI, and can sustain very long spin diffusion lengths. We use a layer-resolved micromagnetic model to describe the magnetization textures and their chirality. Our results demonstrate that for Co thicknesses larger than 3.6 nm, a skyrmion having an intrinsic mixed Bloch-Néel character is stabilized in the entire (single) Co layer.

Exchange Bias Effect in Ferro-/Antiferromagnetic van der Waals Heterostructures

The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe₃GeTe₂)/AFM (CrPS₄) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS₄ is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS₄ allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.

Proximity Spin-Orbit Torque on a Two-Dimensional Magnet within van der Waals Heterostructure: Current-Driven Antiferromagnet-to-Ferromagnet Reversible Nonequilibrium Phase Transition in Bilayer CrI3

The recently discovered two-dimensional magnetic insulator CrI₃ is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using the first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to the interface of the bilayer-CrI₃/monolayer-TaSe₂ van der Waals (vdW) heterostructure will induce spin-orbit torque and thereby drive the dynamics of magnetization on the first monolayer of CrI₃ in direct contact with TaSe₂. By combining the calculated complex angular dependence of spin-orbit torque with the Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization, we demonstrate that current pulses can switch the direction of magnetization on the first monolayer to become parallel to that of the second monolayer, thereby converting CrI₃ from antiferromagnet to ferromagnet while not requiring any external magnetic field. We explain the mechanism of this reversible current-driven nonequilibrium phase transition by showing that first monolayer of CrI₃ carries current due to evanescent wave functions injected by metallic transition metal dichalcogenide TaSe₂, while concurrently acquiring strong spin-orbit coupling via such a proximity effect, whereas the second monolayer of CrI₃ remains insulating. The transition can be detected by passing vertical read current through the vdW heterostructure, encapsulated by a bilayer of hexagonal boron nitride and sandwiched between graphite electrodes, where we find a tunneling magnetoresistance of ≃240%.

Deterministic Magnetization Switching Using Lateral Spin-Orbit Torque

Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external injection of out-of-plane spin currents into the magnetic layer, while an external magnetic field along the electric current direction is generally required for realizing deterministic switching by SOT. Here, deterministic current-induced SOT full magnetization switching by lateral spin-orbit torque in zero external magnetic field is reported. The Pt/Co/Pt magnetic structure is locally annealed by a laser track along the in-plane current direction, resulting in a lateral Pt gradient within the ferromagnetic layer, as confirmed by microstructure and chemical composition analysis. In zero magnetic field, the direction of the deterministic current-induced magnetization switching depends on the location of the laser track, but shows no dependence on the net polarization of external out-of-plane spin currents. From the behavior under external magnetic fields, two independent mechanisms giving rise to SOT are identified, i.e., the lateral Pt-Co asymmetry as well as out-of-plane injected spin currents, where the polarization and the magnitude of the SOT in the former case depends on the relative location and the laser power of the annealing track.

Spontaneous Rotation of Ferrimagnetism Driven by Antiferromagnetic Spin Canting

Spin-reorientation phase transitions that involve the rotation of a crystal's magnetization have been well characterized in distorted-perovskite oxides such as orthoferrites. In these systems spin reorientation occurs due to competing rare-earth and transition metal anisotropies coupled via f-d exchange. Here, we demonstrate an alternative paradigm for spin reorientation in distorted perovskites. We show that the R_{2}CuMnMn_{4}O_{12} (R=Y or Dy) triple A-site columnar-ordered quadruple perovskites have three ordered magnetic phases and up to two spin-reorientation phase transitions. Unlike the spin-reorientation phenomena in other distorted perovskites, these transitions are independent of rare-earth magnetism, but are instead driven by an instability towards antiferromagnetic spin canting likely originating in frustrated Heisenberg exchange interactions, and the competition between Dzyaloshinskii-Moriya and single-ion anisotropies.

Voltage-controlled skyrmion-based nanodevices for neuromorphic computing using a synthetic antiferromagnet

Spintronics exhibits significant potential for a neuromorphic computing system with high speed, high integration density, and low dissipation. In this article, we propose an ultralow-dissipation skyrmion-based nanodevice composed of a synthetic antiferromagnet (SAF) and a piezoelectric substrate for neuromorphic computing. Skyrmions/skyrmion bubbles can be generated in the upper layer of an SAF with a weak anisotropy energy (E _a). Applying a weak electric field on the heterostructure, interlayer antiferromagnetic coupling can be manipulated, giving rise to a continuous transition between a large skyrmion bubble and a small skyrmion. This thus induces a variation of the resistance of a magnetic tunneling junction that can mimic the potentiation/depression of a synapse and the leaky-integral-and-fire function of a neuron at a cost of a very low energy consumption of 0.3 fJ. These results pave a way to ultralow power neuromorphic computing applications.

Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)

Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term that is linear in current density j and magnetic field B, hence, odd in j and B, corresponding to a unidirectional magnetoresistance. At 15 K, for I=10  μA (or j=0.33  A m^{-1}) and B=1  T, it represents 0.5% of the zero field resistance, a much higher value compared to previous reports on unidirectional magnetoresistance (UMR). We ascribe the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the pseudomagnetic field generated by the current applied in the spin-splitted subsurface states of Ge(111). This unidirectional magnetoresistance is independent of the current direction with respect to the Ge crystal axes. It progressively vanishes, either using a negative gate voltage due to carrier activation into the bulk (without spin-splitted bands), or by increasing the temperature due to the Rashba energy splitting of the subsurface states lower than ∼58k_{B}. We believe that UMR could be used as a powerful probe of the spin-orbit interaction in a wide range of materials.

Spin transfer torque and exchange coupling in Josephson junctions with ferromagnetic superconductor reservoirs

In this paper, the spin transfer torque (STT) and the exchange coupling of the Josephson junctions containing the interesting cases of diffusive/ballistic-triplet/singlet ferromagnetic superconductor (FS) materials are investigated. First, the diffusive FS₁/F _c /FS₂ structures with F _c being a junction consisting of ferromagnetic and normal metal parts as well as insulating barriers are investigated. Secondly, the ballistic Josephson junction containing the triplet chiral p/wave FS reservoirs is studied. Using the Nazarov quantum circuit theory for the diffusive structures, it is found that the antiparallel/parallel or vice versa parallel/antiparallel transition of the favorable exchange coupling takes place due to the appearance of the only out-of-plane STT. Furthermore, the analyze of the phase difference interval in which an interlayer length-induced antiparallel/parallel transition can be occurred, is performed. Afterward, the mentioned ballistic structure is dealt with solving the 16 [Formula: see text] 16 Bogoliubov-de-Gennes equation. It is found that although the exchange fields of the FS are laid in the z and y  direction, the STT interestingly exists in all three directions of x, y  and z. This exciting finding suggests that the favorable equilibrium configuration concerning the least exchange coupling occurs in the relative exchange field direction different from 0 or [Formula: see text].

Memristive and CMOS Devices for Neuromorphic Computing

Neuromorphic computing has emerged as one of the most promising paradigms to overcome the limitations of von Neumann architecture of conventional digital processors. The aim of neuromorphic computing is to faithfully reproduce the computing processes in the human brain, thus paralleling its outstanding energy efficiency and compactness. Toward this goal, however, some major challenges have to be faced. Since the brain processes information by high-density neural networks with ultra-low power consumption, novel device concepts combining high scalability, low-power operation, and advanced computing functionality must be developed. This work provides an overview of the most promising device concepts in neuromorphic computing including complementary metal-oxide semiconductor (CMOS) and memristive technologies. First, the physics and operation of CMOS-based floating-gate memory devices in artificial neural networks will be addressed. Then, several memristive concepts will be reviewed and discussed for applications in deep neural network and spiking neural network architectures. Finally, the main technology challenges and perspectives of neuromorphic computing will be discussed.

Neuromorphic Spintronics

Neuromorphic computing uses basic principles inspired by the brain to design circuits that perform artificial intelligence tasks with superior energy efficiency. Traditional approaches have been limited by the energy area of artificial neurons and synapses realized with conventional electronic devices. In recent years, multiple groups have demonstrated that spintronic nanodevices, which exploit the magnetic as well as electrical properties of electrons, can increase the energy efficiency and decrease the area of these circuits. Among the variety of spintronic devices that have been used, magnetic tunnel junctions play a prominent role because of their established compatibility with standard integrated circuits and their multifunctionality. Magnetic tunnel junctions can serve as synapses, storing connection weights, functioning as local, nonvolatile digital memory or as continuously varying resistances. As nano-oscillators, they can serve as neurons, emulating the oscillatory behavior of sets of biological neurons. As superparamagnets, they can do so by emulating the random spiking of biological neurons. Magnetic textures like domain walls or skyrmions can be configured to function as neurons through their non-linear dynamics. Several implementations of neuromorphic computing with spintronic devices demonstrate their promise in this context. Used as variable resistance synapses, magnetic tunnel junctions perform pattern recognition in an associative memory. As oscillators, they perform spoken digit recognition in reservoir computing and when coupled together, classification of signals. As superparamagnets, they perform population coding and probabilistic computing. Simulations demonstrate that arrays of nanomagnets and films of skyrmions can operate as components of neuromorphic computers. While these examples show the unique promise of spintronics in this field, there are several challenges to scaling up, including the efficiency of coupling between devices and the relatively low ratio of maximum to minimum resistances in the individual devices.

Two-dimensional mutually synchronized spin Hall nano-oscillator arrays for neuromorphic computing

In spin Hall nano-oscillators (SHNOs), pure spin currents drive local regions of magnetic films and nanostructures into auto-oscillating precession. If such regions are placed in close proximity to each other they can interact and may mutually synchronize. Here, we demonstrate robust mutual synchronization of two-dimensional SHNO arrays ranging from 2 × 2 to 8 × 8 nano-constrictions, observed both electrically and using micro-Brillouin light scattering microscopy. On short time scales, where the auto-oscillation linewidth [Formula: see text] is governed by white noise, the signal quality factor, [Formula: see text], increases linearly with the number of mutually synchronized nano-constrictions (N), reaching 170,000 in the largest arrays. We also show that SHNO arrays exposed to two independently tuned microwave frequencies exhibit the same synchronization maps as can be used for neuromorphic vowel recognition. Our demonstrations may hence enable the use of SHNO arrays in two-dimensional oscillator networks for high-quality microwave signal generation and ultra-fast neuromorphic computing.

Domain Wall Based Spin-Hall Nano-Oscillators

In the last decade, two revolutionary concepts in nanomagnetism emerged from research for storage technologies and advanced information processing. The first suggests the use of magnetic domain walls in ferromagnetic nanowires to permanently store information in domain-wall racetrack memories. The second proposes a hardware realization of neuromorphic computing in nanomagnets using nonlinear magnetic oscillations in the gigahertz range. Both ideas originate from the transfer of angular momentum from conduction electrons to localized spins in ferromagnets, either to push data encoded in domain walls along nanowires or to sustain magnetic oscillations in artificial neurones. Even though both concepts share a common ground, they live on very different timescales which rendered them incompatible so far. Here, we bridge both ideas by demonstrating the excitation of magnetic auto-oscillations inside nanoscale domain walls using pure spin currents. This Letter will shed light on the current characteristic and spatial distribution of the excited auto-oscillations.

Angle-resolved broadband ferromagnetic resonance apparatus enabled through a spring-loaded sample mounting manipulator

Broadband ferromagnetic resonance is a useful technique to determine the magnetic anisotropy and study the magnetization dynamics of magnetic thin films. We report a spring-loaded sample loading manipulator for reliable sample mounting and rotation. The manipulator enables maximum signal, enhances system stability, and is particularly useful for fully automated in-plane-field angle-resolved measurements. This angle-resolved broadband ferromagnetic resonance apparatus provides a viable method to study anisotropic damping and weak magnetic anisotropies, both vital for fundamental research and applications.

Fully Printed All-Solid-State Organic Flexible Artificial Synapse for Neuromorphic Computing

Nonvolatile, flexible artificial synapses that can be used for brain-inspired computing are highly desirable for emerging applications such as human-machine interfaces, soft robotics, medical implants, and biological studies. Printed devices based on organic materials are very promising for these applications due to their sensitivity to ion injection, intrinsic printability, biocompatibility, and great potential for flexible/stretchable electronics. Herein, we report the experimental realization of a nonvolatile artificial synapse using organic polymers in a scalable fabrication process. The three-terminal electrochemical neuromorphic device successfully emulates the key features of biological synapses: long-term potentiation/depression, spike timing-dependent plasticity learning rule, paired-pulse facilitation, and ultralow energy consumption. The artificial synapse network exhibits an excellent endurance against bending tests and enables a direct emulation of logic gates, which shows the feasibility of using them in futuristic hierarchical neural networks. Based on our demonstration of 100 distinct, nonvolatile conductance states, we achieved a high accuracy in pattern recognition and face classification neural network simulations.

A brain-plausible neuromorphic on-the-fly learning system implemented with magnetic domain wall analog memristors

Neuromorphic computing is an approach to efficiently solve complicated learning and cognition problems like the human brain using electronics. To efficiently implement the functionality of biological neurons, nanodevices and their implementations in circuits are exploited. Here, we describe a general-purpose spiking neuromorphic system that can solve on-the-fly learning problems, based on magnetic domain wall analog memristors (MAMs) that exhibit many different states with persistence over the lifetime of the device. The research includes micromagnetic and SPICE modeling of the MAM, CMOS neuromorphic analog circuit design of synapses incorporating the MAM, and the design of hybrid CMOS/MAM spiking neuronal networks in which the MAM provides variable synapse strength with persistence. Using this neuronal neuromorphic system, simulations show that the MAM-boosted neuromorphic system can achieve persistence, can demonstrate deterministic fast on-the-fly learning with the potential for reduced circuitry complexity, and can provide increased capabilities over an all-CMOS implementation.

Magnetization reversal driven by low dimensional chaos in a nanoscale ferromagnet

Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin torque, magneto-electric, and microwave-assisted switching mechanisms. Here we experimentally show that low-dimensional magnetic chaos induced by alternating spin torque can strongly increase the rate of thermally-activated magnetic switching in a nanoscale ferromagnet. This mechanism exhibits a well-pronounced threshold character in spin torque amplitude and its efficiency increases with decreasing spin torque frequency. We present analytical and numerical calculations that quantitatively explain these experimental findings and reveal the key role played by low-dimensional magnetic chaos near saddle equilibria in enhancement of the switching rate. Our work unveils an important interplay between chaos and stochasticity in the energy assisted switching of magnetic nanosystems and paves the way towards improved energy efficiency of spin torque memory and logic.

Injection locking of multiple auto-oscillation modes in a tapered nanowire spin Hall oscillator

Spin Hall oscillators (SHO) are promising candidates for the generation, detection and amplification of high frequency signals, that are tunable through a wide range of operating frequencies. They offer to be read out electrically, magnetically and optically in combination with a simple bilayer design. Here, we experimentally study the spatial dependence and spectral properties of auto-oscillations in SHO devices based on Pt(7 nm)/Ni₈₀Fe₂₀(5 nm) tapered nanowires. Using Brillouin light scattering microscopy, we observe two individual self-localized spin-wave bullets that oscillate at two distinct frequencies (5.2 GHz and 5.45 GHz) and are localized at different positions separated by about 750 nm within the SHO. This state of a tapered SHO has been predicted by a Ginzburg-Landau auto-oscillator model, but not yet been directly confirmed experimentally. We demonstrate that the observed bullets can be individually synchronized to external microwave signals, leading to a frequency entrainment, linewidth reduction and increase in oscillation amplitude for the bullet that is selected by the microwave frequency. At the same time, the amplitude of other parasitic modes decreases, which promotes the single-mode operation of the SHO. Finally, the synchronization of the spin-wave bullets is studied as a function of the microwave power. We believe that our findings promote the realization of extended spin Hall oscillators accomodating several distinct spin-wave bullets, that jointly cover an extended range of tunability.

Vowel recognition with four coupled spin-torque nano-oscillators

In recent years, artificial neural networks have become the flagship algorithm of artificial intelligence¹. In these systems, neuron activation functions are static, and computing is achieved through standard arithmetic operations. By contrast, a prominent branch of neuroinspired computing embraces the dynamical nature of the brain and proposes to endow each component of a neural network with dynamical functionality, such as oscillations, and to rely on emergent physical phenomena, such as synchronization^2-6, for solving complex problems with small networks^7-11. This approach is especially interesting for hardware implementations, because emerging nanoelectronic devices can provide compact and energy-efficient nonlinear auto-oscillators that mimic the periodic spiking activity of biological neurons^12-16. The dynamical couplings between oscillators can then be used to mediate the synaptic communication between the artificial neurons. One challenge for using nanodevices in this way is to achieve learning, which requires fine control and tuning of their coupled oscillations¹⁷; the dynamical features of nanodevices can be difficult to control and prone to noise and variability¹⁸. Here we show that the outstanding tunability of spintronic nano-oscillators-that is, the possibility of accurately controlling their frequency across a wide range, through electrical current and magnetic field-can be used to address this challenge. We successfully train a hardware network of four spin-torque nano-oscillators to recognize spoken vowels by tuning their frequencies according to an automatic real-time learning rule. We show that the high experimental recognition rates stem from the ability of these oscillators to synchronize. Our results demonstrate that non-trivial pattern classification tasks can be achieved with small hardware neural networks by endowing them with nonlinear dynamical features such as oscillations and synchronization.

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

Recent progress in deep learning extends the capability of artificial intelligence to various practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis. While such DNN is virtually built on contemporary data centers of the von Neumann architecture, physical (in part) DNN of non-von Neumann architecture, also known as neuromorphic computing, can remarkably improve learning and inference efficiency. Particularly, resistance-based nonvolatile random access memory (NVRAM) highlights its handy and efficient application to the multiply-accumulate (MAC) operation in an analog manner. Here, an overview is given of the available types of resistance-based NVRAMs and their technological maturity from the material- and device-points of view. Examples within the strategy are subsequently addressed in comparison with their benchmarks (virtual DNN in deep learning). A spiking neural network (SNN) is another type of neural network that is more biologically plausible than the DNN. The successful incorporation of resistance-based NVRAM in SNN-based neuromorphic computing offers an efficient solution to the MAC operation and spike timing-based learning in nature. This strategy is exemplified from a material perspective. Intelligent machines are categorized according to their architecture and learning type. Also, the functionality and usefulness of NVRAM-based neuromorphic computing are addressed.

Spin torque control of antiferromagnetic moments in NiO

For a long time, there were no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was also difficult to detect the orientation of the magnetic moments since the net magnetic moment is effectively zero. For these reasons, research on antiferromagnets has not been progressed as drastically as that on ferromagnets which are the main materials in modern spintronic devices. Here we show that the magnetic moments in NiO, a typical natural antiferromagnet, can indeed be controlled by the spin torque with a relatively small electric current density (~4 × 10⁷ A/cm²) and their orientation is detected by the transverse resistance resulting from the spin Hall magnetoresistance. The demonstrated techniques of controlling and detecting antiferromagnets would outstandingly promote the methodologies in the recently emerged “antiferromagnetic spintronics”. Furthermore, our results essentially lead to a spin torque antiferromagnetic memory.

Theory of Andreev bound states in S-F-S junctions and S-F proximity devices

Andreev bound states are an expression of quantum coherence between particles and holes in hybrid structures composed of superconducting and non-superconducting metallic parts. Their spectrum carries important information on the nature of the pairing, and determines the current in Josephson devices. Here, I focus on Andreev bound states in systems involving superconductors and ferromagnets with strong spin-polarization. I provide a general framework for non-local Andreev phenomena in such structures in terms of coherence functions, and show how the latter link wave function and Green-function based theories.This article is part of the theme issue 'Andreev bound states'.

Intrinsic Spin-Orbit Torque Arising from the Berry Curvature in a Metallic-Magnet/Cu-Oxide Interface

We report the observation of the intrinsic dampinglike spin-orbit torque (SOT) arising from the Berry curvature in metallic-magnet/CuO_{x} heterostructures. We show that a robust dampinglike SOT, an order of magnitude larger than a fieldlike SOT, is generated in the heterostructure despite the absence of the bulk spin-orbit effect in the CuO_{x} layer. Furthermore, by tuning the interfacial oxidation level, we demonstrate that the fieldlike SOT changes drastically and even switches its sign, which originates from oxygen-modulated spin-dependent disorder. These results provide important information for a fundamental understanding of the physics of the SOTs.

Terahertz Magnon-Polaritons in TmFeO3

Magnon-polaritons are shown to play a dominant role in the propagation of terahertz (THz) waves through TmFeO₃ orthoferrite, if the frequencies of the waves are in the vicinity of the quasi-antiferromagnetic spin resonance mode. Both time-domain THz transmission and emission spectroscopies reveal clear beatings between two modes with frequencies slightly above and slightly below this resonance, respectively. Rigorous modeling of the interaction between the spins of TmFeO₃ and the THz light shows that the frequencies correspond to the upper and lower magnon-polariton branches. Our findings reveal the previously ignored importance of propagation effects and polaritons in such heavily debated areas as THz magnonics and THz spectroscopy of electromagnons. It also shows that future progress in these areas calls for an interdisciplinary approach at the interface between magnetism and photonics.

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

Highly Asymmetric Chiral Domain-Wall Velocities in Y-Shaped Junctions

Recent developments in spin-orbit torques allow for highly efficient current-driven domain wall (DW) motion in nanowires with perpendicular magnetic anisotropy. Here, we show that chiral DWs can be driven into nonequilibrium states that can persist over tens of nanoseconds in Y-shaped magnetic nanowire junctions that have an input and two symmetric outputs. A single DW that is injected into the input splits and travels at very different velocities in the two output branches until it reaches its steady-state velocity. We find that this is due to the disparity between the fast temporal evolution of the spin current derived spin-orbit torque and a much-slower temporal evolution of the DMI-derived torque. Changing the DW polarity inverts the velocity asymmetry in the two output branches, a property that we use to demonstrate the sorting of domains.

Emergence, evolution, and control of multistability in a hybrid topological quantum/classical system

We present a novel class of nonlinear dynamical systems-a hybrid of relativistic quantum and classical systems and demonstrate that multistability is ubiquitous. A representative setting is coupled systems of a topological insulator and an insulating ferromagnet, where the former possesses an insulating bulk with topologically protected, dissipationless, and conducting surface electronic states governed by the relativistic quantum Dirac Hamiltonian and the latter is described by the nonlinear classical evolution of its magnetization vector. The interactions between the two are essentially the spin transfer torque from the topological insulator to the ferromagnet and the local proximity induced exchange coupling in the opposite direction. The hybrid system exhibits a rich variety of nonlinear dynamical phenomena besides multistability such as bifurcations, chaos, and phase synchronization. The degree of multistability can be controlled by an external voltage. In the case of two coexisting states, the system is effectively binary, opening a door to exploitation for developing spintronic memory devices. Because of the dissipationless and spin-momentum locking nature of the surface currents of the topological insulator, little power is needed for generating a significant current, making the system appealing for potential applications in next generation of low power memory devices.

Spin Transfer due to Quantum Magnetization Fluctuations

We utilize a nanoscale magnetic spin-valve structure to demonstrate that current-induced magnetization fluctuations at cryogenic temperatures result predominantly from the quantum fluctuations enhanced by the spin transfer effect. The demonstrated spin transfer due to quantum magnetization fluctuations is distinguished from the previously established current-induced effects by a nonsmooth piecewise-linear dependence of the fluctuation intensity on current. It can be driven not only by the directional flows of spin-polarized electrons, but also by their thermal motion and by scattering of unpolarized electrons. This effect is expected to remain non-negligible even at room temperature, and entails a ubiquitous inelastic contribution to spin-polarizing properties of magnetic interfaces.

Direct imaging of delayed magneto-dynamic modes induced by surface acoustic waves

The magnetoelastic effect—the change of magnetic properties caused by the elastic deformation of a magnetic material—has been proposed as an alternative approach to magnetic fields for the low-power control of magnetization states of nanoelements since it avoids charge currents, which entail ohmic losses. Here, we have studied the effect of dynamic strain accompanying a surface acoustic wave on magnetic nanostructures in thermal equilibrium. We have developed an experimental technique based on stroboscopic X-ray microscopy that provides a pathway to the quantitative study of strain waves and magnetization at the nanoscale. We have simultaneously imaged the evolution of both strain and magnetization dynamics of nanostructures at the picosecond time scale and found that magnetization modes have a delayed response to the strain modes, adjustable by the magnetic domain configuration. Our results provide fundamental insight into magnetoelastic coupling in nanostructures and have implications for the design of strain-controlled magnetostrictive nano-devices.

Understanding the effects of local dynamic strain on magnetization may help the development of magnetic devices. Foerster et al. demonstrate stroboscopic imaging that allows the observation of both strain and magnetization dynamics in nickel when surface acoustic waves are driven in the substrate.

Dramatically Enhanced Spin Dynamo with Plasmonic Diabolo Cavity

The applications of spin dynamos, which could potentially power complex nanoscopic devices, have so far been limited owing to their extremely low energy conversion efficiencies. Here, we present a unique plasmonic diabolo cavity (PDC) that dramatically improves the spin rectification signal (enhancement of more than three orders of magnitude) under microwave excitation; further, it enables an energy conversion efficiency of up to ~0.69 mV/mW, compared with ~0.27 μV/mW without a PDC. This remarkable improvement arises from the simultaneous enhancement of the microwave electric field (~13-fold) and the magnetic field (~195-fold), which cooperate in the spin precession process generates photovoltage (PV) efficiently under ferromagnetic resonance (FMR) conditions. The interplay of the microwave electromagnetic resonance and the ferromagnetic resonance originates from a hybridized mode based on the plasmonic resonance of the diabolo structure and Fabry-Perot-like modes in the PDC. Our work sheds light on how more efficient spin dynamo devices for practical applications could be realized and paves the way for future studies utilizing both artificial and natural magnetism for applications in many disciplines, such as for the design of future efficient wireless energy conversion devices, high frequent resonant spintronic devices, and magnonic metamaterials.

Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

Brain-inspired computation can revolutionize information technology by introducing machines capable of recognizing patterns (images, speech, video) and interacting with the external world in a cognitive, humanlike way. Achieving this goal requires first to gain a detailed understanding of the brain operation, and second to identify a scalable microelectronic technology capable of reproducing some of the inherent functions of the human brain, such as the high synaptic connectivity (~10⁴) and the peculiar time-dependent synaptic plasticity. Here we demonstrate unsupervised learning and tracking in a spiking neural network with memristive synapses, where synaptic weights are updated via brain-inspired spike timing dependent plasticity (STDP). The synaptic conductance is updated by the local time-dependent superposition of pre- and post-synaptic spikes within a hybrid one-transistor/one-resistor (1T1R) memristive synapse. Only 2 synaptic states, namely the low resistance state (LRS) and the high resistance state (HRS), are sufficient to learn and recognize patterns. Unsupervised learning of a static pattern and tracking of a dynamic pattern of up to 4 × 4 pixels are demonstrated, paving the way for intelligent hardware technology with up-scaled memristive neural networks.

Toy model for uncommon spin-orbit-driven spin-torque terms

A toy model combining the angular magneto electric (AME) coupling Hamitonian (Mondal et al 2015 Phys. Rev. B 92 100402) with long-range magnetic dipolar interactions is used to investigate spin-torque phenomena in a magnetic spin valve. It is found that such model (1) gives rise to spin-torque expressions that are analogous in form to those of the common spin-transfer torques; but also (2) predicts additional spin-torque terms, which are generated by an electrical current oriented along unconventional, in-plane directions. The magnitude of the AME induced terms is estimated and the conditions under which they may contribute significantly are explored.

Voltage controlled interfacial magnetism through platinum orbits

Electric fields at interfaces exhibit useful phenomena, such as switching functions in transistors, through electron accumulations and/or electric dipole inductions. We find one potentially unique situation in a metal–dielectric interface in which the electric field is atomically inhomogeneous because of the strong electrostatic screening effect in metals. Such electric fields enable us to access electric quadrupoles of the electron shell. Here we show, by synchrotron X-ray absorption spectroscopy, electric field induction of magnetic dipole moments in a platinum monatomic layer placed on ferromagnetic iron. Our theoretical analysis indicates that electric quadrupole induction produces magnetic dipole moments and provides a large magnetic anisotropy change. In contrast with the inability of current designs to offer ultrahigh-density memory devices using electric-field-induced spin control, our findings enable a material design showing more than ten times larger anisotropy energy change for such a use and highlight a path in electric-field control of condensed matter.

Electric field control of magnetization is usually weak and this hampers its application for the ultralow-power-consumption spintronic devices. Here, the authors demonstrate a mechanism to enhance the control of magnetic anisotropy by voltage-induced electric quadrupole in a metal–dielectric interface.

Probing Phase Coupling Between Two Spin-Torque Nano-Oscillators with an External Source

Phase coupling between auto-oscillators is central for achieving coherent responses such as synchronization. Here we present an experimental approach to probe it in the case of two dipolarly coupled spin-torque vortex nano-oscillators using an external microwave field. By phase locking one oscillator to the external source, we observe frequency pulling on the second oscillator. From coupled phase equations we show analytically that this frequency pulling results from concerted actions of oscillator-oscillator and source-oscillator couplings. The analysis allows us to determine the strength and phase shift of coupling between two oscillators, yielding important information for the implementation of large interacting oscillator networks.

Mutual synchronization of spin torque nano-oscillators through a long-range and tunable electrical coupling scheme

The concept of spin-torque-driven high-frequency magnetization dynamics, allows the potential construction of complex networks of non-linear dynamical nanoscale systems, combining the field of spintronics and the study of non-linear systems. In the few previous demonstrations of synchronization of several spin-torque oscillators, the short-range nature of the magnetic coupling that was used has largely hampered a complete control of the synchronization process. Here we demonstrate the successful mutual synchronization of two spin-torque oscillators with a large separation distance through their long range self-emitted microwave currents. This leads to a strong improvement of both the emitted power and the linewidth. The full control of the synchronized state is achieved at the nanoscale through two active spin transfer torques, but also externally through an electrical delay line. These additional levels of control of the synchronization capability provide a new approach to develop spin-torque oscillator-based nanoscale microwave-devices going from microwave-sources to bio-inspired networks.

The spintronics based complex network is promising for next generation computing systems but hampered by short-range spin-wave coupling. The authors make progress by achieving long range and tunable mutual synchronization of two spin-torque oscillators with improved emission power and signal linewidth.

Three-dimensional nanomagnetism

Magnetic nanostructures are being developed for use in many aspects of our daily life, spanning areas such as data storage, sensing and biomedicine. Whereas patterned nanomagnets are traditionally two-dimensional planar structures, recent work is expanding nanomagnetism into three dimensions; a move triggered by the advance of unconventional synthesis methods and the discovery of new magnetic effects. In three-dimensional nanomagnets more complex magnetic configurations become possible, many with unprecedented properties. Here we review the creation of these structures and their implications for the emergence of new physics, the development of instrumentation and computational methods, and exploitation in numerous applications.

Nanoscale magnetic devices play a key role in modern technologies but current applications involve only 2D structures like magnetic discs. Here the authors review recent progress in the fabrication and understanding of 3D magnetic nanostructures, enabling more diverse functionalities.

Neuromorphic device architectures with global connectivity through electrolyte gating

Information processing in the brain takes place in a network of neurons that are connected with each other by an immense number of synapses. At the same time, neurons are immersed in a common electrochemical environment, and global parameters such as concentrations of various hormones regulate the overall network function. This computational paradigm of global regulation, also known as homeoplasticity, has important implications in the overall behaviour of large neural ensembles and is barely addressed in neuromorphic device architectures. Here, we demonstrate the global control of an array of organic devices based on poly(3,4ethylenedioxythiophene):poly(styrene sulf) that are immersed in an electrolyte, a behaviour that resembles homeoplasticity phenomena of the neural environment. We use this effect to produce behaviour that is reminiscent of the coupling between local activity and global oscillations in the biological neural networks. We further show that the electrolyte establishes complex connections between individual devices, and leverage these connections to implement coincidence detection. These results demonstrate that electrolyte gating offers significant advantages for the realization of networks of neuromorphic devices of higher complexity and with minimal hardwired connectivity.

Synthetic ferrimagnet nanowires with very low critical current density for coupled domain wall motion

Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of energy-efficient devices has been hampered by the high current densities needed to initiate domain wall motion. We show here that a remarkable reduction in the critical current density can be achieved for in-plane magnetised coupled domain walls in CoFe/Ru/CoFe synthetic ferrimagnet tracks. The antiferromagnetic exchange coupling between the layers leads to simple Néel wall structures, imaged using photoemission electron and Lorentz transmission electron microscopy, with a width of only ~100 nm. The measured critical current density to set these walls in motion, detected using magnetotransport measurements, is 1.0 × 1011 Am-2, almost an order of magnitude lower than in a ferromagnetically coupled control sample. Theoretical modelling indicates that this is due to nonadiabatic driving of anisotropically coupled walls, a mechanism that can be used to design efficient domain-wall devices.

Probing a Device's Active Atoms

Materials science and device studies have, when implemented jointly as "operando" studies, better revealed the causal link between the properties of the device's materials and its operation, with applications ranging from gas sensing to information and energy technologies. Here, as a further step that maximizes this causal link, the paper focuses on the electronic properties of those atoms that drive a device's operation by using it to read out the materials property. It is demonstrated how this method can reveal insight into the operation of a macroscale, industrial-grade microelectronic device on the atomic level. A magnetic tunnel junction's (MTJ's) current, which involves charge transport across different atomic species and interfaces, is measured while these atoms absorb soft X-rays with synchrotron-grade brilliance. X-ray absorption is found to affect magnetotransport when the photon energy and linear polarization are tuned to excite FeO bonds parallel to the MTJ's interfaces. This explicit link between the device's spintronic performance and these FeO bonds, although predicted, challenges conventional wisdom on their detrimental spintronic impact. The technique opens interdisciplinary possibilities to directly probe the role of different atomic species on device operation, and shall considerably simplify the materials science iterations within device research.

Linear dynamics of classical spin as Möbius transformation

Though the overwhelming majority of natural processes occur far from the equilibrium, general theoretical approaches to non-equilibrium phase transitions remain scarce. Recent breakthroughs introduced a description of open dissipative systems in terms of non-Hermitian quantum mechanics enabling the identification of a class of non-equilibrium phase transitions associated with the loss of combined parity (reflection) and time-reversal symmetries. Here we report that the time evolution of a single classical spin (e.g. monodomain ferromagnet) governed by the Landau-Lifshitz-Gilbert-Slonczewski equation in the absence of magnetic anisotropy terms is described by a Möbius transformation in complex stereographic coordinates. We identify the parity-time symmetry-breaking phase transition occurring in spin-transfer torque-driven linear spin systems as a transition between hyperbolic and loxodromic classes of Möbius transformations, with the critical point of the transition corresponding to the parabolic transformation. This establishes the understanding of non-equilibrium phase transitions as topological transitions in configuration space.

Coupling dynamics of Nb/Nb2O5 relaxation oscillators

The coupling dynamics of capacitively coupled Nb/Nb₂O₅ relaxation oscillators are shown to exhibit rich collective behaviour depending on the negative differential resistance response of the individual devices, the operating voltage and the coupling capacitance. These coupled oscillators are shown to exhibit stable frequency and phase locking states at source voltages as low as 2.2 V, with frequency control in the range from 0.85 to 16.2 MHz and frequency tunability of ∼8 MHz V^-1. The experimental realisation of such compact, scalable and low power coupled-oscillator systems is of particular significance for the development and implementation of large oscillator networks in non-Boolean computing architectures.

Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures

Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in novel epitaxial Ru/Co₂FeAl(CFA)/MgO heterostructures with interfacial perpendicular magnetic anisotropy (PMA). Perpendicularly magnetized tunnel junctions with the structure of Ru/CFA/MgO were fabricated and exhibited an effective voltage control on switching fields for the CFA free layer. Large VCMA coefficients of 108 and 139 fJ/Vm for the CFA film were achieved at room temperature and 4 K, respectively. The interfacial stability in the heterostructure was confirmed by repeating measurements. Temperature dependences of both the interfacial PMA and the VCMA effect were also investigated. It is found that the temperature dependences follow power laws of the saturation magnetization with an exponent of ~2, where the latter is definitely weaker than that of conventional Ta/CoFeB/MgO. The significant VCMA effect observed in this work indicates that the Ru/CFA/MgO heterostructure could be one of the promising candidates for spintronic devices with voltage control.

Intrinsic optimization using stochastic nanomagnets

This paper draws attention to a hardware system which can be engineered so that its intrinsic physics is described by the generalized Ising model and can encode the solution to many important NP-hard problems as its ground state. The basic constituents are stochastic nanomagnets which switch randomly between the ±1 Ising states and can be monitored continuously with standard electronics. Their mutual interactions can be short or long range, and their strengths can be reconfigured as needed to solve specific problems and to anneal the system at room temperature. The natural laws of statistical mechanics guide the network of stochastic nanomagnets at GHz speeds through the collective states with an emphasis on the low energy states that represent optimal solutions. As proof-of-concept, we present simulation results for standard NP-complete examples including a 16-city traveling salesman problem using experimentally benchmarked models for spin-transfer torque driven stochastic nanomagnets.

Ferroelectric symmetry-protected multibit memory cell

The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.

Enhancement of thermal spin transfer torque by double-barrier magnetic tunnel junctions with a nonmagnetic metal spacer

Enhancement of thermal spin transfer torque in a double-barrier magnetic tunnel junction with a nonmagnetic-metal spacer is proposed in this study. The results indicate that, given the same temperature difference, thermal spin transfer torque and charge current density for the proposed double barrier magnetic tunnel junction configuration can be approximately twice as much as that of the traditional single-barrier magnetic tunnel junctions. This enhancement can be attributed to the resonant tunneling mechanism in the double-barrier structure.

Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers

The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS₂ or WSe₂)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.

Spintronic Nanodevices for Bioinspired Computing

Bioinspired hardware holds the promise of low-energy, intelligent, and highly adaptable computing systems. Applications span from automatic classification for big data management, through unmanned vehicle control, to control for biomedical prosthesis. However, one of the major challenges of fabricating bioinspired hardware is building ultra-high-density networks out of complex processing units interlinked by tunable connections. Nanometer-scale devices exploiting spin electronics (or spintronics) can be a key technology in this context. In particular, magnetic tunnel junctions (MTJs) are well suited for this purpose because of their multiple tunable functionalities. One such functionality, non-volatile memory, can provide massive embedded memory in unconventional circuits, thus escaping the von-Neumann bottleneck arising when memory and processors are located separately. Other features of spintronic devices that could be beneficial for bioinspired computing include tunable fast nonlinear dynamics, controlled stochasticity, and the ability of single devices to change functions in different operating conditions. Large networks of interacting spintronic nanodevices can have their interactions tuned to induce complex dynamics such as synchronization, chaos, soliton diffusion, phase transitions, criticality, and convergence to multiple metastable states. A number of groups have recently proposed bioinspired architectures that include one or several types of spintronic nanodevices. In this paper, we show how spintronics can be used for bioinspired computing. We review the different approaches that have been proposed, the recent advances in this direction, and the challenges toward fully integrated spintronics complementary metal-oxide-semiconductor (CMOS) bioinspired hardware.