Large anomalous Hall current induced by topological nodal lines in a ferromagnetic van der Waals semimetal

Magnetic Nanostructures: Rational Design and Fabrication Strategies toward Diverse Applications

In recent years, the continuous development of magnetic nanostructures (MNSs) has tremendously promoted both fundamental scientific research and technological applications. Different from the bulk magnet, the systematic engineering on MNSs has brought a great breakthrough in some emerging fields such as the construction of MNSs, the magnetism exploration of multidimensional MNSs, and their potential translational applications. In this review, we give a detailed description of the synthetic strategies of MNSs based on the fundamental features and application potential of MNSs and discuss the recent progress of MNSs in the fields of nanomedicines, advanced nanobiotechnology, catalysis, and electromagnetic wave adsorption (EMWA), aiming to provide guidance for fabrication strategies of MNSs toward diverse applications.

Above-ordering-temperature large anomalous Hall effect in a triangular-lattice magnetic semiconductor

While anomalous Hall effect (AHE) has been extensively studied in the past, efforts for realizing large Hall response have been mainly limited within intrinsic mechanism. Lately, however, a theory of extrinsic mechanism has predicted that magnetic scattering by spin cluster can induce large AHE even above magnetic ordering temperature, particularly in magnetic semiconductors with low carrier density, strong exchange coupling, and finite spin chirality. Here, we find out a new magnetic semiconductor EuAs, where Eu²⁺ ions with large magnetic moments form distorted triangular lattice. In addition to colossal magnetoresistance, EuAs exhibits large AHE with an anomalous Hall angle of 0.13 at temperatures far above antiferromagnetic ordering. As also demonstrated by model calculations, observed AHE can be explained by the spin cluster scattering in a hopping regime. Our findings shed light on magnetic semiconductors hosting topological spin textures, developing a field targeting diluted carriers strongly coupled to noncoplanar spin structures.

Signatures of Weyl Fermion Annihilation in a Correlated Kagome Magnet

The manipulation of topological states in quantum matter is an essential pursuit of fundamental physics and next-generation quantum technology. Here we report the magnetic manipulation of Weyl fermions in the kagome spin-orbit semimetal Co_{3}Sn_{2}S_{2}, observed by high-resolution photoemission spectroscopy. We demonstrate the exchange collapse of spin-orbit-gapped ferromagnetic Weyl loops into paramagnetic Dirac loops under suppression of the magnetic order. We further observe that topological Fermi arcs disappear in the paramagnetic phase, suggesting the annihilation of exchange-split Weyl points. Our findings indicate that magnetic exchange collapse naturally drives Weyl fermion annihilation, opening new opportunities for engineering topology under correlated order parameters.

Anisotropic Nodal-Line-Derived Large Anomalous Hall Conductivity in ZrMnP and HfMnP

The nontrivial band structure of semimetals has attracted substantial research attention in condensed matter physics and materials science in recent years owing to its intriguing physical properties. Within this class, a group of nontrivial materials known as nodal-line semimetals is particularly important. Nodal-line semimetals exhibit the potential effects of electronic correlation in nonmagnetic materials, whereas they enhance the contribution of the Berry curvature in magnetic materials, resulting in high anomalous Hall conductivity (AHC). In this study, two ferromagnetic compounds, namely ZrMnP and HfMnP, are selected, wherein the abundance of mirror planes in the crystal structure ensures gapped nodal lines at the Fermi energy. These nodal lines result in one of the largest AHC values of 2840 Ω^-1 cm^-1 , with a high anomalous Hall angle of 13.6% in these compounds. First-principles calculations provide a clear and detailed understanding of nodal line-enhanced AHC. The finding suggests a guideline for searching large AHC compounds.

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D layered ferromagnetic metal Fe₃ GeTe₂ as spin injection and detection electrodes, are reported. Two distinct transport behaviors are observed: tunneling and metallic, which are assigned to the formation of a pinhole-free tunnel barrier at the Fe₃ GeTe₂ /InSe interface and pinholes in the InSe spacer layer, respectively. For the tunneling device, a large magnetoresistance (MR) of 41% is obtained under an applied bias current of 0.1 µA at 10 K, which is about three times larger than that of the metallic device. Moreover, the tunneling device exhibits a lower operating bias current but a more sensitive bias current dependence than the metallic device. The MR and spin polarization of both the metallic and tunneling devices decrease with increasing temperature, which can be fitted well by Bloch's law. These findings reveal the critical role of pinholes in the MR of all-2D van der Waals ferromagnet/semiconductor heterojunction devices.

Sign-tunable anomalous Hall effect induced by two-dimensional symmetry-protected nodal structures in ferromagnetic perovskite thin films

Magnetism and spin-orbit coupling are two quintessential ingredients underlying topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be lifted by spin-orbit coupling, the nodal structures become a source of Berry curvature, leading to a large anomalous Hall effect. However, two-dimensional systems can possess stable nodal structures only when proper crystalline symmetry exists. Here we show that two-dimensional spin-polarized band structures of perovskite oxides generally support symmetry-protected nodal lines and points that govern both the sign and the magnitude of the anomalous Hall effect. To demonstrate this, we performed angle-resolved photoemission studies of ultrathin films of SrRuO₃, a representative metallic ferromagnet with spin-orbit coupling. We show that the sign-changing anomalous Hall effect upon variation in the film thickness, magnetization and chemical potential can be well explained by theoretical models. Our work may facilitate new switchable devices based on ferromagnetic ultrathin films.

Weyl-mediated helical magnetism in NdAlSi

Emergent relativistic quasiparticles in Weyl semimetals are the source of exotic electronic properties such as surface Fermi arcs, the anomalous Hall effect and negative magnetoresistance, all observed in real materials. Whereas these phenomena highlight the effect of Weyl fermions on the electronic transport properties, less is known about what collective phenomena they may support. Here, we report a Weyl semimetal, NdAlSi, that offers an example. Using neutron diffraction, we found a long-wavelength helical magnetic order in NdAlSi, the periodicity of which is linked to the nesting vector between two topologically non-trivial Fermi pockets, which we characterize using density functional theory and quantum oscillation measurements. We further show the chiral transverse component of the spin structure is promoted by bond-oriented Dzyaloshinskii-Moriya interactions associated with Weyl exchange processes. Our work provides a rare example of Weyl fermions driving collective magnetism.

Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors

Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications^1,2. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction^3-10. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn₃Si₂Te₆, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal-insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities.

Computational Simulation of the Electronic State Transition in the Ternary Hexagonal Compound BaAgBi

Topological properties in metals or semimetals have sparked tremendous scientific interest in quantum chemistry because of their exotic surface state behavior. The current research focus is still on discovering ideal topological metal material candidates. We propose a ternary compound with a hexagonal crystal structure, BaAgBi, which was discovered to exhibit two Weyl nodal ring states around the Fermi energy level without the spin-orbit coupling (SOC) effect using theoretical calculations. When the SOC effect is considered, the topological phases transform into two Dirac nodal line states, and their locations also shift from the Weyl nodal rings. The surface states of both the Weyl nodal ring and Dirac nodal lines were calculated on the (001) surface projection using a tight-binding Hamiltonian, and clear drumhead states were observed, with large spatial distribution areas and wide energy variation ranges. These topological features in BaAgBi can be very beneficial for experimental detection, inspiring further experimental investigation.

Oxygen-vacancy-induced magnetism in anti-perovskite topological Dirac semimetal Ba3SnO

The thermodynamic, structural, magnetic and electronic properties of the pristine and intrinsic vacancy-defect-containing topological Dirac semimetal Ba₃SnO are studied using first-principles density functional theory calculations. The thermodynamic stability of Ba₃SnO has been evaluated with reference to its competing binary phases Ba₂Sn, BaSn and BaO. Subsequently, valid limits of the atomic chemical potentials derived from the thermodynamic stability were used for assessing the formation of Ba, Sn and O vacancy defects in Ba₃SnO under different synthesis environments. Based on the calculated defect-formation energies, we find that the charge-neutral oxygen vacancies are the most favourable type of vacancy defect under most chemical environments. The calculated electronic properties of pristine Ba₃SnO show that inclusion of spin-orbit coupling in exchange-correlation potentials computed using generalized gradient approximation yields a semimetallic band structure exhibiting twin Dirac cones along the Γ-X path of the Brillouin zone. The effect of spin-polarization and spin-orbit coupling on the physical properties of intrinsic vacancy defects containing Ba₃SnO has been examined in detail. Using Bader charges, electron localization function (ELF), electronic density of states (DOS) and spin density, we show that the isolated oxygen vacancy is a magnetic defect in anti-perovskite Ba₃SnO. Our results show that the origin of magnetism in Ba₃SnO is the accumulation of unpaired charges at the oxygen vacancy sites, which couple strongly with the 5d states of the Ba atom. Owing to the metastability observed in earlier theoretically predicted magnetic topological semimetals, the present study reveals the important role of intrinsic vacancy defects in giving rise to magnetism and also provides opportunities for engineering the electronic structure of a Dirac semimetal.

Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures

Interface engineering is an effective approach to tune the magnetic properties of van der Waals (vdW) magnets and their heterostructures. The prerequisites for the practical utilization of vdW magnets and heterostructures are a quantitative analysis of their magnetic anisotropy and the ability to modulate their interfacial properties, which have been challenging to achieve with conventional methods. Here we characterize the magnetic anisotropy of Fe₃GeTe₂ layers by employing the magnetometric technique based on anomalous Hall measurements and confirm its intrinsic nature. In addition, on the basis of the thickness dependences of the anisotropy field, we identify the interfacial and bulk contributions. Furthermore, we demonstrate that the interfacial anisotropy in Fe₃GeTe₂-based heterostructures is locally controlled by adjacent layers, leading to the realization of multiple magnetic behaviors in a single channel. This work proposes that the magnetometric technique is a useful platform for investigating the intrinsic properties of vdW magnets and that functional devices can be realized by local interface engineering.

Prediction of unconventional magnetism in doped FeSb2

It is commonly believed that the energy bands of typical collinear antiferromagnets (AFs), which have zero net magnetization, are Kramers spin-degenerate. Kramers nondegeneracy is usually associated with a global time-reversal symmetry breaking (e.g., via ferromagnetism) or with a combination of spin-orbit interaction and broken spatial inversion symmetry. Recently, another type of spin splitting was demonstrated to emerge in some collinear magnets that are fully spin compensated by symmetry, nonrelativistic, and not even necessarily noncentrosymmetric. These materials feature nonzero spin density staggered in real space as seen in traditional AFs but also spin splitting in momentum space, generally seen only in ferromagnets. This results in a combination of materials characteristics typical of both ferromagnets and AFs. Here, we discuss this recently discovered class with application to a well-known semiconductor, FeSb₂, and predict that with certain alloying, it becomes magnetic and metallic and features the aforementioned magnetic dualism. The calculated energy bands split antisymmetrically with respect to spin-degenerate nodal surfaces rather than nodal points, as in the case of spin-orbit splitting. The combination of a large (0.2-eV) spin splitting, compensated net magnetization with metallic ground state, and a specific magnetic easy axis generates a large anomalous Hall conductivity (∼150 S/cm) and a sizable magnetooptical Kerr effect, all deemed to be hallmarks of nonzero net magnetization. We identify a large contribution to the anomalous response originating from the spin-orbit interaction gapped anti-Kramers nodal surfaces, a mechanism distinct from the nodal lines and Weyl points in ferromagnets.

Tunable topologically nontrivial states in newly discovered graphyne allotropes: from Dirac nodal grid to Dirac nodal loop

By means of quotient-graph associated crystal prediction method, a new graphyne allotrope with unique Dirac nodal grid state is reported in this work. It is named as 191-E24Y24-1 according to its hexagonal lattice (with P6/mmm symmetry, No. 191) containing 24 sp²-hybridized carbon atoms and 24 sp-hybridized ones. The first-principles results show that the total energy of 191-E24Y24-1 is more favorable than that of recent synthesizedβ-graphdiyne and carbon ene-yne. It is also demonstrated to be dynamically, thermally, and mechanically stable. Interestingly, the 191-E24Y24-1 harbors intrinsic semimetal features showing intriguing hexagonal Dirac nodal grid state in the reciprocal space. Such unique electronic state is stable against small external tensile strains, and it is tunable under compression strains which will transform to new triangle Dirac nodal grid state. Moreover, a new metastable graphyne allotrope named 191-E12Y36-4 with Dirac nodal loop state is also observed in the process of stretching 191-E24Y24-1 with large tensile strains. The results presented in this work reveal two novel graphyne allotropes with exotic electronic properties. These discoveries are not only physical interesting, but also provide potential material candidates for carbon-based high performance electronic nanodevices.

Drastic change of magnetic anisotropy in Fe3GeTe2 and Fe4GeTe2 monolayers under electric field studied by density functional theory

Magnetic anisotropy energy (MAE) is one of the most important properties in two-dimensional magnetism since the magnetization in two dimension is vulnerable to the spin rotational fluctuations. Using density functional theory calculation, we show that perpendicular electric field dramatically enhances the in-plane and out-of-plane magnetic anisotropies in Fe₃GeTe₂ and Fe₄GeTe₂ monolayers, respectively, allowing the change of easy axis in both systems. The changes of the MAE under the electric field are understood as the result of charge redistribution inside the layer, which is available due to the three-dimensional (3D) network of Fe atoms in the monolayers. As a result, we suggest that due to the unique structure of Fe_nGeTe₂ compounds composed by peculiar 3D networks of metal atoms, the MAE can be dramatically changed by the external perpendicular electric field.

Robust Giant Magnetoresistance in 2D Van der Waals Molecular Magnetic Tunnel Junctions

The spin transport across a zero-dimensional (0D) single-molecule sandwiched by two-dimensional (2D) van der Waals (vdW) ferromagnetic electrodes may open vast opportunities to create novel mixed-dimensional spintronics devices. However, this remains unexplored yet. Inspired by the recent discovery of 2D intrinsic ferromagnets Fe₃GeTe₂, using first-principles spin transport calculations, we show that single-molecule junctions based on Fe₃GeTe₂ can yield perfect spin filtering and a significant magnetoresistance (MR) of up to ∼6075%. This remarkable MR is more than 2 orders of magnitude higher than the MR obtained for the corresponding junctions with conventional ferromagnetic metals (e.g., Ni, Fe, and Co). We demonstrate the results of two representative examples that are feasible in the experiments: (i) A benzene or (ii) bezenedithiol (BDT) connected either through a scanning tunneling microscope or break-junction setups. We find that the conductance of BDT junctions is more than 10 times larger than that of the benzene junction due to a much stronger hybridization effect at the molecule-metal interfaces. The key mechanism of the perfect spin filtering and large MR in single-molecule junctions is mainly determined by the intrinsic properties of Fe₃GeTe₂ electrodes, while the actual conductance is determined by the hybridization strength of the majority spin channel at the molecule-metal interfaces. It is also predicted that the perfect spin filtering and the remarkably huge MR are highly insensitive to structural variations, interface defects, and stacking orders of the electrodes. Our results provide important insights for expanding molecular spintronics platforms from conventional ferromagnetic metals to new 2D vdw magnets.

Kondo Holes in the Two-Dimensional Itinerant Ising Ferromagnet Fe3GeTe2

Heavy Fermion (HF) states emerge in correlated quantum materials due to the intriguing interplay between localized magnetic moments and itinerant electrons but rarely appear in 3d-electron systems due to high itinerancy of d-electrons. Here, an anomalous enhancement of Kondo screening is observed at the Kondo hole of local Fe vacancies in Fe₃GeTe₂ which is a recently discovered 3d-HF system featuring Kondo lattice and two-dimensional itinerant ferromagnetism. An itinerant Kondo-Ising model is established to reproduce the experimental results and provides insight into the competition between Ising ferromagnetism and Kondo screening. Our work explains the microscopic origin of the d-electron HF states in Fe₃GeTe₂ and inspires future studies of the enriched quantum many-body effects with Kondo holes.

Tunable and Robust Near-Room-Temperature Intrinsic Ferromagnetism of a van der Waals Layered Cr-Doped 2H-MoTe2 Semiconductor with an Out-of-Plane Anisotropy

The intrinsically nonmagnetic feature of van der Waals (vdW) layered transition-metal dichalcogenide (TMDC) semiconductors limits the spintronic applications of these semiconductors. In this paper, we demonstrate a facile Te flux strategy to induce intrinsic ferromagnetism in the vdW layered 2H-MoTe₂ semiconductor by magnetic chromium (Cr) doping. The Curie temperature (T_c) and saturation magnetization (M_s) can be well tuned by adjusting the Cr doping concentration. A notable T_c up to 275 K can be achieved for the vdW layered Cr-doped 2H-MoTe₂ bulk crystals, which is much higher than that of recently reported van der Waals ferromagnetic semiconductors (T_c is mostly less than 70 K), in contrast to the diamagnetic feature of the pristine MoTe₂. Meanwhile, the highest M_s of the vdW layered Cr-doped 2H-MoTe₂ bulk crystals can reach 4.78 emu g^-1, which is stronger than most values reported for magnetic-element-doped van der Waals materials. In addition, all of the as-grown semiconducting Cr-doped 2H-MoTe₂ (Cr-2H-MoTe₂) single crystals display a large magnetic anisotropy with an out-of-plane easy axis of magnetization. The observed ferromagnetism in the Cr-2H-MoTe₂ has intrinsic characteristics, which can be mainly attributed to the spin polarization caused by Cr doping as confirmed by the density functional theory (DFT) calculations. Our approach offers an avenue to tune the ferromagnetism in the vdW layered semiconductor and explore its diverse spintronic and magnetoelectric applications.

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2

Magnetic van der Waals (vdW) materials are poised to enable all-electrical control of magnetism in the two-dimensional limit. However, tuning the magnetic ground state in vdW itinerant ferromagnets by voltage-induced charge doping remains a significant challenge, due to the extremely large carrier densities in these materials. Here, by cleaving the vdW itinerant ferromagnet Fe₅GeTe₂ (F5GT) into 5.4 nm (around two unit cells), we find that the ferromagnetism (FM) in F5GT can be substantially tuned by the thickness. Moreover, by utilizing a solid protonic gate, an electron doping concentration of above 10²¹ cm^-3 has been exhibited in F5GT nanosheets. Such a high carrier accumulation exceeds that possible in widely used electric double-layer transistors (EDLTs) and surpasses the intrinsic carrier density of F5GT. Importantly, it is accompanied by a magnetic phase transition from FM to antiferromagnetism (AFM). The realization of an antiferromagnetic phase in nanosheet F5GT suggests the promise of applications in high-temperature antiferromagnetic vdW devices and heterostructures.

Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2

Two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted a lot of attention owing to the stabilization of long range magnetic order down to atomic dimensions, and the prospect of novel spintronic devices with unique functionalities. The clarification of the magnetoresistive properties and its correlation to the underlying magnetic configurations is essential for 2D vdW-based spintronic devices. Here, the effect of Co-doping on the magnetic and magnetotransport properties of Fe₃GeTe₂ have been investigated. Magnetotransport measurements reveal an unusual Hall effect behavior whose strength was considerably modified by Co-doping and attributed to arise from the underlying complicated spin textures. The present results provide a clue to tailoring of the underlying interactions necessary for the realization of a variety of unconventional spin textures for 2D vdW FM-based spintronics.

Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (T_C) or phase transitions. One of the challenges, however, is the realization of high T_C 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe_3+XGeTe₂ films with T_C above room temperature. By controlling the Fe composition in Fe_3+XGeTe₂, a continuously modulated T_C in a broad range of 185–320 K has been achieved. This widely tunable T_C is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe_3+XGeTe₂ fashion.

Colossal Anomalous Hall Effect in Ferromagnetic van der Waals CrTe2

van der Waals crystals exhibit excellent material performance when exfoliated to few-atomic-layer thickness. In contrast, the van der Waals thin films more than 10 nm thick are believed to show bulk properties, in which outstanding material performance is rarely found. Here we report the largest anomalous Hall conductivity observed so far in a 170 nm van der Waals ferromagnetic 1T-CrTe₂ flake, which reaches 67,000 Ω^-1 cm^-1. Such a colossal anomalous Hall conductivity in 1T-CrTe₂ is dominated by the extrinsic skew scattering process rather than the intrinsic Berry phase effect, as evidenced by the linear relation between the anomalous Hall conductivity and the longitudinal conductivity. Defying the dilemma of mutually exclusive large anomalous Hall angle and high electric conductivity for most ferromagnets, 1T-CrTe₂ achieves both in a thin film sample. Considering the shared physics of the anomalous Hall effect and the spin Hall effect, our finding offers a guideline for searching large spin Hall materials of high conductivity which may overcome the bottleneck of overheating in spintronics devices.

Possible Topological Hall Effect above Room Temperature in Layered Cr1.2Te2 Ferromagnet

Topological Hall effect (THE) has been used as a powerful tool to unlock spin chirality in novel magnetic materials. Recent focus has been widely paid to THE and possible chiral spin textures in two-dimensional (2D) layered magnetic materials. However, the room-temperature THE has been barely reported in 2D materials, which hinders its practical applications in 2D spintronics. In this paper, we report a possible THE signal featuring antisymmetric peaks in a wide temperature window up to 320 K in Cr_1.2Te₂, a new quasi-2D ferromagnetic material. The temperature, thickness, and magnetic field dependences of the THE lead to potential spin chirality origin that is associated with the spin canting under external magnetic fields. Our work holds promise for practical applications in future chiral spin-based vdW spintronic devices.

Dirac cone, flat band and saddle point in kagome magnet YMn6Sn6

Kagome-lattices of 3d-transition metals hosting Weyl/Dirac fermions and topological flat bands exhibit non-trivial topological characters and novel quantum phases, such as the anomalous Hall effect and fractional quantum Hall effect. With consideration of spin-orbit coupling and electron correlation, several instabilities could be induced. The typical characters of the electronic structure of a kagome lattice, i.e., the saddle point, Dirac-cone, and flat band, around the Fermi energy (EF) remain elusive in magnetic kagome materials. We present the experimental observation of the complete features in ferromagnetic kagome layers of YMn6Sn6 helically coupled along the c-axis, by using angle-resolved photoemission spectroscopy and band structure calculations. We demonstrate a Dirac dispersion near EF, which is predicted by spin-polarized theoretical calculations, carries an intrinsic Berry curvature and contributes to the anomalous Hall effect in transport measurements. In addition, a flat band and a saddle point with a high density of states near EF are observed. These multi-sets of kagome features are of orbital-selective origin and could cause multi-orbital magnetism. The Dirac fermion, flat band and saddle point in the vicinity of EF open an opportunity in manipulating the topological properties in magnetic materials.

Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet

Discovery of two dimensional (2D) magnets, showing intrinsic ferromagnetic (FM) or antiferromagnetic (AFM) orders, has accelerated development of novel 2D spintronics, in which all the key components are made of van der Waals (vdW) materials and their heterostructures. High-performing and energy-efficient spin functionalities have been proposed, often relying on current-driven manipulation and detection of the spin states. In this regard, metallic vdW magnets are expected to have several advantages over the widely-studied insulating counterparts, but have not been much explored due to the lack of suitable materials. Here, we report tunable itinerant ferro- and antiferromagnetism in Co-doped Fe₄GeTe₂ utilizing the vdW interlayer coupling, extremely sensitive to the material composition. This leads to high T_N antiferromagnetism of T_N ~ 226 K in a bulk and ~210 K in 8 nm-thick nanoflakes, together with tunable magnetic anisotropy. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets as an active component of vdW spintronic applications.

Metallic van der Waals magnets have considerable technological promise, due to their ability to be strongly coupled with electronic currents and integrated in two dimensional heterostructures. Here, Seo et al. demonstrate highly tunable itinerant antiferromagnetism in a van der Waals magnet.

2D-Berry-Curvature-Driven Large Anomalous Hall Effect in Layered Topological Nodal-Line MnAlGe

Topological magnets comprising 2D magnetic layers with Curie temperatures (T_C ) exceeding room temperature are key for dissipationless quantum transport devices. However, the identification of a material with 2D ferromagnetic planes that exhibits an out-of-plane-magnetization remains a challenge. This study reports a ferromagnetic, topological, nodal-line, and semimetal MnAlGe composed of square-net Mn layers that are separated by nonmagnetic Al-Ge spacers. The 2D ferromagnetic Mn layers exhibit an out-of-plane magnetization below T_C  ≈ 503 K. Density functional calculations demonstrate that 2D arrays of Mn atoms control the electrical, magnetic, and therefore topological properties in MnAlGe. The unique 2D distribution of the Berry curvature resembles the 2D Fermi surface of the bands that form the topological nodal line near the Fermi energy. A large anomalous Hall conductivity of ≈700 S cm^-1 is obtained at 2 K and related to this nodal-line-induced 2D Berry curvature distribution. The high transition temperature, large anisotropic out-of-plane magnetism, and natural heterostructure-type atomic arrangements consisting of magnetic Mn and nonmagnetic Al/Ge elements render nodal-line MnAlGe one of the few, unique, and layered topological ferromagnets that have ever been observed.

Unravelling Photoinduced Interlayer Spin Transfer Dynamics in Two-Dimensional Nonmagnetic-Ferromagnetic van der Waals Heterostructures

Although light is the fastest means to manipulate the interfacial spin injection and magnetic proximity related quantum properties of two-dimensional (2D) magnetic van der Waals (vdW) heterostructures, its potential remains mostly untapped. Here, inspired by the recent discovery of 2D ferromagnets Fe₃GeTe₂ (FGT), we applied the real-time density functional theory (rt-TDDFT) to study photoinduced interlayer spin transfer dynamics in 2D nonmagnetic-ferromagnetic (NM-FM) vdW heterostructures, including graphene-FGT, silicene-FGT, germanene-FGT, antimonene-FGT and h-BN-FGT interfaces. We observed that laser pulses induce significant large spin injection from FGT to nonmagnetic (NM) layers within a few femtoseconds. In addition, we identified an interfacial atom-mediated spin transfer pathway in heterostructures in which the photoexcited spin of Fe first transfers to intralayered Te atoms and then hops to interlayered NM layers. Interlayer hopping is approximately two times slower than intralayer spin transfer. Our results provide the microscopic understanding for optically control interlayer spin dynamics in 2D magnetic heterostructures.

Giant c-axis nonlinear anomalous Hall effect in Td-MoTe2 and WTe2

While the anomalous Hall effect can manifest even without an external magnetic field, time reversal symmetry is nonetheless still broken by the internal magnetization of the sample. Recently, it has been shown that certain materials without an inversion center allow for a nonlinear type of anomalous Hall effect whilst retaining time reversal symmetry. The effect may arise from either Berry curvature or through various asymmetric scattering mechanisms. Here, we report the observation of an extremely large c-axis nonlinear anomalous Hall effect in the non-centrosymmetric Td phase of MoTe2 and WTe2 without intrinsic magnetic order. We find that the effect is dominated by skew-scattering at higher temperatures combined with another scattering process active at low temperatures. Application of higher bias yields an extremely large Hall ratio of E⊥/E|| = 2.47 and corresponding anomalous Hall conductivity of order 8 × 107 S/m.

Magnetic Skyrmion Materials

Skyrmion, a concept originally proposed in particle physics half a century ago, can now find the most fertile field for its applicability, that is, the magnetic skyrmion realized in helimagnetic materials. The spin swirling vortex-like texture of the magnetic skyrmion can define the particle nature by topology; that is, all the constituent spin moments within the two-dimensional sheet wrap the sphere just one time. Such a topological nature of the magnetic skyrmion can lead to extraordinary metastability via topological protection and the driven motion with low electric-current excitation, which may promise future application to spintronics. The skyrmions in the magnetic materials frequently show up as the crystal lattice form, e.g., hexagonal lattice, but sometimes as isolated or independent particles. These skyrmions in magnets were initially found in acentric magnets, such as chiral, polar, and bilayered magnets endowed with antisymmetric spin exchange interaction, while the skyrmion host materials have been explored in a broader family of compounds including centrosymmetric magnets. This review describes the materials science and materials chemistry of magnetic skyrmions using the classification scheme of the skyrmion forming microscopic mechanisms. The emergent phenomena and functions mediated by skyrmions are described, including the generation of emergent magnetic and electric field by statics and dynamics of skrymions and the inherent magnetoelectric effect. The other important magnetic topological defects in two or three dimensions, such as biskyrmions, antiskyrmions, merons, and hedgehogs, are also reviewed in light of their interplay with the skyrmions.

Topological Quantum Materials from the Viewpoint of Chemistry

Topology, a mathematical concept, has recently become a popular and truly transdisciplinary topic encompassing condensed matter physics, solid state chemistry, and materials science. Since there is a direct connection between real space, namely atoms, valence electrons, bonds, and orbitals, and reciprocal space, namely bands and Fermi surfaces, via symmetry and topology, classifying topological materials within a single-particle picture is possible. Currently, most materials are classified as trivial insulators, semimetals, and metals or as topological insulators, Dirac and Weyl nodal-line semimetals, and topological metals. The key ingredients for topology are certain symmetries, the inert pair effect of the outer electrons leading to inversion of the conduction and valence bands, and spin-orbit coupling. This review presents the topological concepts related to solids from the viewpoint of a solid-state chemist, summarizes techniques for growing single crystals, and describes basic physical property measurement techniques to characterize topological materials beyond their structure and provide examples of such materials. Finally, a brief outlook on the impact of topology in other areas of chemistry is provided at the end of the article.

Exchange Bias in Weakly Interlayer-Coupled van der Waals Magnet Fe3GeTe2

van der Waals (vdW) magnetic materials provide an ideal platform to study low-dimensional magnetism. However, observations of magnetic characteristics of these layered materials truly distinguishing them from conventional magnetic thin film systems have been mostly lacking. In an effort to investigate magnetic properties unique to vdW magnetic materials, we examine the exchange bias effect, a magnetic phenomenon emerging at the ferromagnetic-antiferromagnetic interface. Exchange bias is observed in the naturally oxidized vdW ferromagnet Fe₃GeTe₂, owing to an antiferromagnetic ordering in the surface oxide layer. Interestingly, the magnitude and thickness dependence of the effect is unlike those expected in typical thin-film systems. We propose a possible mechanism for this behavior, based on the weak interlayer magnetic coupling inherent to vdW magnets, demonstrating the distinct properties of these materials. Furthermore, the robust and sizable exchange bias for vdW magnets persisting up to relatively high temperatures presents a significant advance for realizing practical two-dimensional spintronics.

Newly discovered graphyne allotrope with rare and robust Dirac node loop

Two-dimensional (2D) carbon allotropes with topologically nontrivial states are drawing considerable attention owing to their unique physical properties and great potential applications in the next generation of micro-nano devices. In contrast to the numerous Dirac points predicted in 2D carbon allotropes, systems featuring Dirac nodal lines (loops) are still quite rare. Here, by means of first-principles calculation, we report our newly discovered carbon monolayer 123-E8Y24-1 with robust Dirac nodal line states, which possesses a tetragonal lattice with P4/mmm symmetry and contains 8 sp² carbon atoms (graphene: E8) and 24 sp carbon atoms (grapheyne: Y24) in the crystalline cell. This 2D material is as energetically stable as the recently experimentally synthesized β-graphdiyne, and it is further predicted to be dynamically, mechanically, and also thermodynamically stable. Owing to its intrinsic geometric characteristics, 123-E8Y24-1 also exhibits obvious Young's modulus anisotropy, with a sizable ratio between the maximum and minimum value of up to 5.8. Remarkably, 123-E8Y24-1 presents a semimetal nature and possesses Dirac nodal line states in the electronic band structure, and such behavior could be kept well under external strain between -10.0% and 8.0%. The electronic properties of 123-E8Y24-1 can be carefully confirmed by constructing a tight-binding (TB) model. The findings presented in this paper reveal a novel 2D Dirac nodal loop carbon sheet, providing a new candidate for carbon-based high-speed electronic devices.

Gigantic Current Control of Coercive Field and Magnetic Memory Based on Nanometer-Thin Ferromagnetic van der Waals Fe3 GeTe2

Controlling magnetic states by a small current is essential for the next-generation of energy-efficient spintronic devices. However, it invariably requires considerable energy to change a magnetic ground state of intrinsically quantum nature governed by fundamental Hamiltonian, once stabilized below a phase-transition temperature. Here, it is reported that, surprisingly, an in-plane current can tune the magnetic state of the nanometer-thin van der Waals ferromagnet Fe₃ GeTe₂ from a hard magnetic state to a soft magnetic state. It is a direct demonstration of the current-induced substantial reduction of the coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for Fe₃ GeTe₂ . In addition, a working model of a new nonvolatile magnetic memory based on the principle of the discovery in Fe₃ GeTe₂ , controlled by a tiny current, is further demonstrated. The findings open up a new window of exciting opportunities for magnetic van der Waals materials with potentially huge impact on the future development of spintronic and magnetic memory.

Strain-Sensitive Magnetization Reversal of a van der Waals Magnet

By virtue of the layered structure, van der Waals (vdW) magnets are sensitive to the lattice deformation controlled by the external strain, providing an ideal platform to explore the one-step magnetization reversal that is still conceptual in conventional magnets due to the limited strain-tuning range of the coercive field. In this study, a uniaxial tensile strain is applied to thin flakes of the vdW magnet Fe₃ GeTe₂ (FGT), and a dramatic increase of the coercive field (H_c ) by more than 150% with an applied strain of 0.32% is observed. Moreover, the change of the transition temperatures between the different magnetic phases under strain is investigated, and the phase diagram of FGT in the strain-temperature plane is obtained. Comparing the phase diagram with theoretical results, the strain-tunable magnetism is attributed to the sensitive change of magnetic anisotropy energy. Remarkably, strain allows an ultrasensitive magnetization reversal to be achieved, which may promote the development of novel straintronic device applications.

Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure

The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS₃/Fe₃GeTe₂ when the temperature is below the Neel temperature of MnPS₃. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS₃/Fe₃GeTe₂ heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe₃GeTe₂ during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.

Magnetic critical behavior of the van der Waals Fe5GeTe2 crystal with near room temperature ferromagnetism

The van der Waals ferromagnet Fe₅GeTe₂ has a Curie temperature T_C of about 270 K, which is tunable through controlling the Fe deficiency content and can even reach above room temperature. To achieve insights into its ferromagnetic exchange that gives the high T_C, the critical behavior has been investigated by measuring the magnetization in Fe₅GeTe₂ crystal around the ferromagnetic ordering temperature. The analysis of the measured magnetization by using various techniques harmonically reached to a set of reliable critical exponents with T_C = 273.7 K, β = 0.3457 ± 0.001, γ = 1.40617 ± 0.003, and δ = 5.021 ± 0.001. By comparing these critical exponents with those predicted by various models, it seems that the magnetic properties of Fe₅GeTe₂ could be interpreted by a three-dimensional magnetic exchange with the exchange distance decaying as J(r) ≈ r^−4.916, close to that of a three-dimensional Heisenberg model with long-range magnetic coupling.

Fermionic order by disorder in a van der Waals antiferromagnet

CeTe₃ is a unique platform to investigate the itinerant magnetism in a van der Waals (vdW) coupled metal. Despite chemical pressure being a promising route to boost quantum fluctuation in this system, a systematic study on the chemical pressure effect on Ce³⁺(4f¹) states is absent. Here, we report on the successful growth of a series of Se doped single crystals of CeTe₃. We found a fluctuation driven exotic magnetic rotation from the usual easy-axis ordering to an unusual hard-axis ordering. Unlike in localized magnetic systems, near-critical magnetism can increase itinerancy hand-in-hand with enhancing fluctuation of magnetism. Thus, seemingly unstable hard-axis ordering emerges through kinetic energy gain, with the self-consistent observation of enhanced magnetic fluctuation (disorder). As far as we recognize, this order-by-disorder process in fermionic system is observed for the first time within vdW materials. Our finding opens a unique experimental platform for direct visualization of the rich quasiparticle Fermi surface deformation associated with the Fermionic order-by-disorder process. Also, the search for emergent exotic phases by further tuning of quantum fluctuation is suggested as a promising future challenge.

Local Disorder-Induced Elevation of Intrinsic Anomalous Hall Conductance in an Electron-Doped Magnetic Weyl Semimetal

Topological materials are expected to show distinct transport signatures owing to their unique band-inversion characteristic and band-crossing points. However, the intentional modulation of such topological responses through experimentally feasible means has yet to be explored in depth. Here, an unusual elevation of the anomalous Hall effect (AHE) is obtained in electron (Ni)-doped magnetic Weyl semimetals Co_{3-x}Ni_{x}Sn_{2}S_{2}, showing peak values in the anomalous Hall-conductivity, Hall-angle, and Hall-factor at a relatively low doping level of x=0.11. The separation of intrinsic and extrinsic contributions using the TYJ scaling model indicates that such a significant enhancement is dominated by the intrinsic mechanism of the electronic Berry curvature. Theoretical calculations reveal that compared with the Fermi-level shifting from electron filling, a usually overlooked effect of doping, that is, local disorder, imposes a striking effect on broadening of the bands and narrowing of the inverted gap, thus resulting in an elevation of the integrated Berry curvature. Our results not only realize an enhancement of the AHE in a magnetic Weyl semimetal, but also provide a practical design principle for modulating the bands and transport properties in topological materials by exploiting the local disorder effect from doping.

Orbital-selective Dirac fermions and extremely flat bands in frustrated kagome-lattice metal CoSn

Layered kagome-lattice 3d transition metals are emerging as an exciting platform to explore the frustrated lattice geometry and quantum topology. However, the typical kagome electronic bands, characterized by sets of the Dirac-like band capped by a phase-destructive flat band, have not been clearly observed, and their orbital physics are even less well investigated. Here, we present close-to-textbook kagome bands with orbital differentiation physics in CoSn, which can be well described by a minimal tight-binding model with single-orbital hopping in Co kagome lattice. The capping flat bands with bandwidth less than 0.2 eV run through the whole Brillouin zone, especially the bandwidth of the flat band of out-of-plane orbitals is less than 0.02 eV along Γ-M. The energy gap induced by spin-orbit interaction at the Dirac cone of out-of-plane orbitals is much smaller than that of in-plane orbitals, suggesting orbital-selective character of the Dirac fermions.

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe₂/Fe₃GeTe₂ interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ m^-2. This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.

Giant room temperature anomalous Hall effect and tunable topology in a ferromagnetic topological semimetal Co2MnAl

Weyl semimetals exhibit unusual surface states and anomalous transport phenomena. It is hard to manipulate the band structure topology of specific Weyl materials. Topological transport phenomena usually appear at very low temperatures, which sets challenges for applications. In this work, we demonstrate the band topology modification via a weak magnetic field in a ferromagnetic Weyl semimetal candidate, Co₂MnAl, at room temperature. We observe a tunable, giant anomalous Hall effect (AHE) induced by the transition involving Weyl points and nodal rings. The AHE conductivity is as large as that of a 3D quantum AHE, with the Hall angle (Θ^H) reaching a record value ([Formula: see text]) at the room temperature among magnetic conductors. Furthermore, we propose a material recipe to generate large AHE by gaping nodal rings without requiring Weyl points. Our work reveals an intrinsically magnetic platform to explore the interplay between magnetic dynamics and topological physics for developing spintronic devices.

Nodal Flexible-surface Semimetals: Case of Carbon Nanotube Networks

Nodal surface-based topological semimetals (TSMs) are drawing attention due to their unique excitation and plasmon behaviors. However, only nodal flat-surface and nodal sphere TSMs are theoretically proposed due to strict symmetry requirements. Here, we propose that a series of surface-based topological phases can be realized in a tight-binding (TB) model with sublattice symmetry. These topological phases, named as nodal flexible-surface semimetals, include not only nodal surface and nodal sphere TSMs but also novel phases, like nodal tube, nodal crossbar, and nodal hourglass-like surface TSMs. According to the TB model, a family of carbon nanotube networks are then identified as nodal flexible-surface TSMs by first-principles calculations, and the topological phase transitions between these TSMs can be induced by strains. Moreover, the nodal flexible-surface TSMs with intrinsic high density of states at the Fermi level and special drumhead surface states are promising for studying high-temperature superconductors and strong correlation effects.

Magnetic and magneto-transport studies of two-dimensional ferromagnetic compound Fe3GeTe2

We have systematically reported the magnetic and magneto-transport properties of two-dimensional itinerant ferromagnetic compound Fe3GeTe2at high magnetic fields of 58 T and demonstrated the correlation between its transport and magnetism. Anomalous two-steps magnetic ordering and antiferromagnetic-like transitions in zero field-cooling (ZFC) curves forH∥ab-plane are observed. Additionally, we find that intrinsic negative magnetoresistances in bulk Fe3GeTe2single crystal are mainly attributed to the suppression of spin-fluctuations in low magnetic fields. Complex evolutions of temperature dependent high field magnetoresistances are detected under different magnetic field and current configurations, which can be explained as a result of the competition between spin-fluctuations, the magnon-scatterings and classical cyclotronic effects.

Origin of ferromagnetism and the effect of doping on Fe3GeTe2

Recent experimental findings of two dimensional ferromagnetism in Fe3GeTe2, whose critical temperature can reach room temperature by gating, has attracted great research interest. Here we performed elaborate ab initio studies using density functional theory, dynamical mean-field theory and magnetic force response theory. In contrast to the conventional wisdom, it is unambiguously shown that Fe3GeTe2 is not ferromagnetic but is antiferromagnetic, carrying zero net moment in its stoichiometric phase. Fe defect and hole doping are the keys to make this material ferromagnetic as supported by previously disregarded experiments. Furthermore, we found that electron doping also induces the antiferro- to ferro-magnetic transition. It is crucial to understand the notable recent experiments on gate-controlled ferromagnetism. Our results not only reveal the origin of ferromagnetism of this material but also show how it can be manipulated with defects and doping.

Accessing new magnetic regimes by tuning the ligand spin-orbit coupling in van der Waals magnets

Van der Waals (VdW) materials have opened new directions in the study of low dimensional magnetism. A largely unexplored arena is the intrinsic tuning of VdW magnets toward new ground states. Chromium trihalides provided the first such example with a change of interlayer magnetic coupling emerging upon exfoliation. Here, we take a different approach to engineer previously unknown ground states, not by exfoliation, but by tuning the spin-orbit coupling (SOC) of the nonmagnetic ligand atoms (Cl, Br, I). We synthesize a three-halide series, CrCl3 - x - y Br x I y , and map their magnetic properties as a function of Cl, Br, and I content. The resulting triangular phase diagrams unveil a frustrated regime near CrCl3. First-principles calculations confirm that the frustration is driven by a competition between the chromium and halide SOCs. Furthermore, we reveal a field-induced change of interlayer coupling in the bulk of CrCl3 - x - y Br x I y crystals at the same field as in the exfoliation experiments.

Crystal time-reversal symmetry breaking and spontaneous Hall effect in collinear antiferromagnets

Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, found more than a century ago, has been understood in terms of the time-reversal symmetry breaking by the internal spin structure of a ferromagnetic, noncolinear antiferromagnetic, or skyrmionic form. Here, we identify previously overlooked robust Hall effect mechanism arising from collinear antiferromagnetism combined with nonmagnetic atoms at noncentrosymmetric positions. We predict a large magnitude of this crystal Hall effect in a room temperature collinear antiferromagnet RuO₂ and catalog, based on symmetry rules, extensive families of material candidates. We show that the crystal Hall effect is accompanied by the possibility to control its sign by the crystal chirality. We illustrate that accounting for the full magnetization density distribution instead of the simplified spin structure sheds new light on symmetry breaking phenomena in magnets and opens an alternative avenue toward low-dissipation nanoelectronics.

Exchange Bias Effect in Ferro-/Antiferromagnetic van der Waals Heterostructures

The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe₃GeTe₂)/AFM (CrPS₄) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS₄ is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS₄ allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.

Exploitable Magnetic Anisotropy of the Two-Dimensional Magnet CrI3

Magnetic anisotropy often plays a central role in various static and dynamic properties of magnetic materials. In particular, for two-dimensional (2D) van der Waals materials, as inferred from the Mermin-Wagner theorem, it is an essential prerequisite for stabilizing ferromagnetic order. In this work, we carry out first-principles calculations for a CrI₃ monolayer and investigate how its magnetic anisotropy is interrelated to adjustable parameters governing the underlying electronic structure. We explore various routes for controlled manipulation of magnetic anisotropy: chemical adsorption, substitutional doping, optical excitation, and charge transfer through a heterostructure. In particular, the vertical stacking of CrI₃ and graphene is noteworthy in regard to controlling magnetic anisotropy: the spin anisotropy axis is switchable between the out-of-plane and in-plane directions, which is accompanied by a variation in the anisotropy energy of up to 500%. Our results show the possibility that dynamic control of the anisotropy of the 2D magnet CrI₃ may enable the development of an advanced spintronic device with enhanced energy efficiency and high operation speed.

Observation of Magnetic Skyrmion Bubbles in a van der Waals Ferromagnet Fe3GeTe2

Two-dimensional (2D) van der Waals (vdW) magnetic materials have recently been introduced as a new horizon in materials science, and they enable potential applications for next-generation spintronic devices. Here, in this communication, the observations of stable Bloch-type magnetic skyrmions in single crystals of 2D vdW Fe₃GeTe₂ (FGT) are reported by using in situ Lorentz transmission electron microscopy (TEM). We find the ground-state magnetic stripe domains in FGT transform into skyrmion bubbles when an external magnetic field is applied perpendicularly to the (001) thin plate with temperatures below the Curie temperature T_C. Most interestingly, a hexagonal lattice of skyrmion bubbles is obtained via field-cooling manipulation with magnetic field applied along the [001] direction. Owing to their topological stability, the skyrmion bubble lattices are stable to large field-cooling tilted angles and further reproduced by utilizing the micromagnetic simulations. These observations directly demonstrate that the 2D vdW FGT possesses a rich variety of topological spin textures, being of great promise for future applications in the field of spintronics.

Topological Magnetic Phase in the Candidate Weyl Semimetal CeAlGe

We report the discovery of topological magnetism in the candidate magnetic Weyl semimetal CeAlGe. Using neutron scattering we find this system to host several incommensurate, square-coordinated multi-k[over →] magnetic phases below T_{N}. The topological properties of a phase stable at intermediate magnetic fields parallel to the c axis are suggested by observation of a topological Hall effect. Our findings highlight CeAlGe as an exceptional system for exploiting the interplay between the nontrivial topologies of the magnetization in real space and Weyl nodes in momentum space.

Signatures of the Magnetic Entropy in the Thermopower Signals in Nanoribbons of the Magnetic Weyl Semimetal Co3Sn2S2

Weyl semimetals exhibit interesting electronic properties due to their topological band structure. In particular, large anomalous Hall and anomalous Nernst signals are often reported, which allow for a detailed and quantitative study of subtle features. We pattern single crystals of the magnetic Weyl semimetal Co₃Sn₂S₂ into nanoribbon devices using focused ion beam cutting and optical lithography. This approach enables a very precise study of the galvano- and thermomagnetic transport properties. Indeed, we found interesting features in the temperature dependency of the anomalous Hall and Nernst effects. We present an analysis of the data based on the Mott relation and identify in the Nernst response signatures of magnetic fluctuations enhancing the anomalous Nernst conductivity at the magnetic phase transition.