Uniform hexagonal graphene flakes and films grown on liquid copper surface

Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

Interface between graphene and liquid Cu from molecular dynamics simulations

Controllable synthesis of defect-free graphene is crucial for applications since the properties of graphene are highly sensitive to any deviations from the crystalline lattice. We focus here on the emerging use of liquid Cu catalysts, which have high potential for fast and efficient industrial-scale production of high-quality graphene. The interface between graphene and liquid Cu is studied using force field and ab initio molecular dynamics, revealing a complete or partial embedding of finite-sized flakes. By analyzing flakes of different sizes, we find that the size-dependence of the embedding can be rationalized based on the energy cost of embedding vs bending the graphene flake. The embedding itself is driven by the formation of covalent bonds between the under-coordinated edge C atoms and the liquid Cu surface, which is accompanied by a significant charge transfer. In contrast, the central flake atoms are located around or slightly above 3 Å from the liquid Cu surface and exhibit weak van der Waals-bonding and much lower charge transfer. The structural and electronic properties of the embedded state revealed in our work provide the atomic-scale information needed to develop effective models to explain the special growth observed in experiments where various interesting phenomena such as flake self-assembly and rotational alignment, high growth speeds, and low defect densities in the final graphene product have been observed.

Quasi-Monocrystalline Graphene Crystallization on Liquid Copper Matrix

To access the properties of theoretical graphene, it is crucial to manufacture layers with a defect-free structure. The imperfections of the structure are the cause of deterioration in both electrical and mechanical properties. Among the most commonly occurring crystalline defects, there are grain boundaries and overlapping zones. Hence, perfect graphene shall be monocrystalline, which is difficult and expensive to obtain. An alternative to monocrystalline structure is a quasi-monocrystalline graphene with low angle-type boundaries without the local overlapping of neighboring flakes. The purpose of this work was to identify factors that directly affect the structure of graphene grown on a surface of a liquid metal. In the article the growth of graphene on a liquid copper is presented. Nucleating graphene flakes are able to move with three degrees of freedom creating low-angle type boundaries when they attach to one another. The structure of graphene grown with the use of this method is almost free of overlapping zones. In addition, the article presents the influence of impurities on the amount of crystallization nuclei formed, and thus the possibility to order the structure, creating a quasi-monocrystalline layer.

Designed Growth of Large-Size 2D Single Crystals

In the "post-Moore's Law" era, new materials are highly expected to bring next revolutionary technologies in electronics and optoelectronics, wherein 2D materials are considered as very promising candidates beyond bulk materials due to their superiorities of atomic thickness, excellent properties, full components, and the compatibility with the processing technologies of traditional complementary metal-oxide semiconductors, enabling great potential in fabrication of logic, storage, optoelectronic, and photonic 2D devices with better performances than state-of-the-art ones. Toward the massive applications of highly integrated 2D devices, large-size 2D single crystals are a prerequisite for the ultimate quality of materials and extreme uniformity of properties. However, at present, it is still very challenging to grow all 2D single crystals into the wafer scale. Therefore, a systematic understanding for controlled growth of various 2D single crystals needs to be further established. Here, four key aspects are reviewed, i.e., nucleation control, growth promotion, surface engineering, and phase control, which are expected to be controllable at different periods during the growth. In addition, the perspectives on designed growth and potential applications are discussed for showing the bright future of these advanced material systems of 2D single crystals.

Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially nonuniform growth dynamics, it is challenging to grow 2D TMDCs over large areas with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design with gaseous precursors to grow monolayer TMDCs with a uniform density and high quality over the whole substrate and with excellent reproducibility. Such a gaseous VCVD design can well control the three key parameters in TMDC growth, including precursor concentration, gas flow, and temperature, which cannot be done in a currently widely used horizontal CVD system with solid precursors. Statistical results show that VCVD-grown monolayer TMDCs including MoS₂ and WS₂ are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by one-step transfer of VCVD-grown TMDCs, owning to their good uniformity. This work sheds light on the growth of 2D materials with high uniformity on a large-area substrate, which can be used for the wafer-scale fabrication of 2D materials and their heterostructures.

Particle-Catalyst-Free Vapor-Liquid-Solid Growth of Millimeter-Scale Crystalline Compound Semiconductors on Nonepitaxial Substrates

Direct growth of single-crystal compound semiconductors on nonepitaxial substrates is a promising route for device processing simplification in electronic and optoelectronic applications. However, the nonepitaxial growth technique for 2D single crystals is still a fundamental challenge. Here, we demonstrate that the macroscopic 2D interface of liquid metals and nonepitaxial solid substrates could be universally designed for the chemical vapor deposition growth of crystalline compound semiconductors. By adopting a sandwiched solid metal/liquid metal/solid substrate environment, millimeter-scale 2D GaS, 2D GaSe, and 1D GaTe single crystals of high quality were synthesized at the interface of liquid gallium and nonepitaxial substrates. Evidence shows that the particle-catalyst-free vapor-liquid-solid growth is driven by screw dislocations. Furthermore, we successfully extend the growth strategy to various metal chalcogenides (Sn, In, Cu, and Ag) and pnictides (Sb). Our work opens up a new route for the direct growth of single-crystalline compound semiconductors on nonepitaxial substrates.

Toward Scalable Growth for Single-Crystal Graphene on Polycrystalline Metal Foil

Despite the enormous potential of the single-crystalline two-dimensional (2D) materials for a wide range of future innovations and applications, 2D single-crystals are still suffering in industrialization due to the lack of efficient large-area production methods. In this work, we introduce a general approach for the scalable growth of single-crystalline graphene, which is a representative 2D material, through "transplanting" uniaxially aligned graphene "seedlings" onto a larger-area catalytic growth substrate. By inducing homoepitaxial growth of graphene from the edges of the seeds arrays without additional nucleations, we obtained single-crystalline graphene with an area four times larger than the mother graphene seed substrate. Moreover, the defect-healing process eliminated the inherent defects of seeds, ensuring the reliability and crystallinity of the single-crystalline graphene for industrialization.

Interference Provides Clarity: Direct Observation of 2D Materials at Fluid-Fluid Interfaces

Monolayer particles of two-dimensional (2D) materials represent a scientifically and technologically interesting class of anisotropic particles with colloidal-scale lateral sizes but sub-nanometer thicknesses. This atomic-scale thickness leads to interesting phenomena that can be exploited in next-generation thin-film technologies, and fluid-fluid interfaces provide a potentially scalable platform to confine, assemble, and deposit functional thin films of 2D materials. However, directly observing how these materials interact and assemble into a given film morphology is experimentally challenging because of their sub-nanometer thicknesses. Here, we demonstrate the ability to directly observe graphene, molybdenum disulfide (MoS₂), and hexagonal boron nitride (h-BN) particles at fluid-fluid interfaces using interference reflection microscopy (IRM). Monolayer MoS₂ and graphene particles demonstrated >10% optical contrast at an air-water interface, which allowed us to quantitatively analyze in situ images of self-assembled MoS₂ particles and to map trajectories of interacting graphene particles. Additionally, the Brownian motion of a graphene particle was tracked and analyzed in the context of passive microrheology theory for 2D particle probes. Our results demonstrate how IRM can be used to obtain quantitative spatiotemporal information regarding the self-assembly and dynamics of 2D materials at fluid-fluid interfaces. It will have a significant impact on our ability to investigate systems of atomically thin particles at fluid-fluid interfaces, an area that has fundamental scientific importance and materials science applications but has suffered from a lack of direct, in situ observation techniques.

The formation mechanism of hexagonal Mo2C defects in CVD graphene grown on liquid copper

Thin Mo₂C hexagonal defects precipitate in CVD graphene when Mo crucibles are engaged to hold the liquid copper substrate, while these defects disappear when W crucibles are present. These defects have been identified as the thin precipitates of Mo₂C. The growth mechanism of the Mo₂C defects is demonstrated through thermodynamic calculations. This can be beneficial in graphene defect engineering through the vapour phase transport of the volatile MoO₃ phase.

Development of a reactor for the in situ monitoring of 2D materials growth on liquid metal catalysts, using synchrotron x-ray scattering, Raman spectroscopy, and optical microscopy

Liquid metal catalysts (LMCats) (e.g., molten copper) can provide a new mass-production method for two-dimensional materials (2DMs) (e.g., graphene) with significantly higher quality and speed and lower energy and material consumption. To reach such technological excellence, the physicochemical properties of LMCats and the growth mechanisms of 2DMs on LMCats should be investigated. Here, we report the development of a chemical vapor deposition (CVD) reactor which allows the investigation of ongoing chemical reactions on the surface of a molten metal at elevated temperatures and under reactive conditions. The surface of the molten metal is monitored simultaneously using synchrotron x-ray scattering, Raman spectroscopy, and optical microscopy, thereby providing complementary information about the atomic structure and chemical state of the surface. To enable in situ characterization on a molten substrate at high temperatures (e.g., ∼1370 K for copper), the optical and x-ray windows need to be protected from the evaporating LMCat, reaction products, and intense heat. This has been achieved by creating specific gas-flow patterns inside the reactor. The optimized design of the reactor has been achieved using multiphysics COMSOL simulations, which take into account the heat transfer, fluid dynamics, and transport of LMCat vapor inside the reactor. The setup has been successfully tested and is currently used to investigate the CVD growth of graphene on the surface of molten copper under pressures ranging from medium vacuum up to atmospheric pressure.

Controlled Growth of Single-Crystal Graphene Films

Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high-end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain-boundary-free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single-seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single-crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large-area single-crystal graphene films are discussed.

The shape-dependent surface oxidation of 2D ultrathin Mo2C crystals

2D atomic crystals have been widely explored, usually owing to their numerous shapes, of which the typical hexagon has drawn the most interest. However, the relationship between shape and properties has not been fully probed, owing to the lack of a proper system. Here, we demonstrate for the first time the shape-dependent surface oxidation of 2D Mo₂C crystals, where the elongated flakes are preferentially oxidized under ambient conditions when compared with regular ones, showing higher chemical activity. The gradual surface oxidation of elongated Mo₂C crystals as a function of time is clearly observable. Structural determinations reveal that a discrepancy in the arrangement of Mo and C atoms between elongated and regular crystals accounts for the selective oxidation behavior. The identification of the shape-dependent surface oxidization of Mo₂C crystals provides significant possibilities for tuning the properties of 2D materials via shape-control.

Methane-Mediated Vapor Transport Growth of Monolayer WSe2 Crystals

The electrical and optical properties of semiconducting transition metal dichalcogenides (TMDs) can be tuned by controlling their composition and the number of layers they have. Among various TMDs, the monolayer WSe₂ has a direct bandgap of 1.65 eV and exhibits p-type or bipolar behavior, depending on the type of contact metal. Despite these promising properties, a lack of efficient large-area production methods for high-quality, uniform WSe₂ hinders its practical device applications. Various methods have been investigated for the synthesis of large-area monolayer WSe₂, but the difficulty of precisely controlling solid-state TMD precursors (WO₃, MoO₃, Se, and S powders) is a major obstacle to the synthesis of uniform TMD layers. In this work, we outline our success in growing large-area, high-quality, monolayered WSe₂ by utilizing methane (CH₄) gas with precisely controlled pressure as a promoter. When compared to the catalytic growth of monolayered WSe₂ without a gas-phase promoter, the catalytic growth of the monolayered WSe₂ with a CH₄ promoter reduced the nucleation density to 1/1000 and increased the grain size of monolayer WSe₂ up to 100 μm. The significant improvement in the optical properties of the resulting WSe₂ indicates that CH₄ is a suitable candidate as a promoter for the synthesis of TMD materials, because it allows accurate gas control.

Graphene-Induced in Situ Growth of Monolayer and Bilayer 2D SiC Crystals Toward High-Temperature Electronics

A reproducible graphene-induced in situ process is demonstrated for the first time for growing large-scale monolayer and bilayer cubic silicon carbide (SiC) crystals on a liquid Cu surface by chemical vapor deposition (CVD) method. Precise control over the morphology of SiC crystals is further realized by modulating growth conditions, thus leading to the formation of several shaped SiC crystals ranging from triangular, rectangular, pentagonal, and even to hexagonal kind. Simulations based on density functional theory are carried out to elucidate the growth mechanism of SiC flakes with various morphologies, which are in striking consistency with experimental observations. In the liquid Cu-assisted CVD system, growth temperature (∼1100 °C) enables sublimation and deposition of silicon oxide (SiO₂) derived from quartz tube, while liquid Cu facilitates preformation of graphene originated from methane. The SiO₂ and graphene, grown and reacted in situ in the CVD process, are served as the silicon and carbon source for the cubic SiC crystals, respectively. Moreover, the gradual transformation process from SiO₂ particles to SiC flakes is directly observed, with several middle stages clearly displayed. The direct in situ growth of SiC crystals offers a novel method for scaled production of SiC crystals and is beneficial to understand its growth mechanism, and thus push forward the way to develop high-temperature and high-frequency electronic devices.

Graphene at Fifteen

Graphene is a two-dimensional nanomaterial composed of 1-10 layers of carbon atoms in a honeycomb lattice. It has been 15 years since the first isolation of few-layer graphene from graphite by the Scotch Tape method. Worldwide research efforts on graphene have been rewarded with enormous breakthroughs in fundamental science and innovative applications. To achieve an influential impact on society, graphene must be manufactured at large scales, be superior to existing products, and be safe to use. In this Perspective, we highlight relevant issues in the quest for commercialization of graphene-containing products. We showcase achievements in improving graphene synthesis while also discussing concerns regarding graphene standardization and graphene's impact on the environment and human health.

Controlled synthesis of 2D Mo2C/graphene heterostructure on liquid Au substrates as enhanced electrocatalytic electrodes

2D Mo₂C has drawn considerable interest recently for its excellent properties in 2D superconductivity and enhanced hydrogen evolution reaction (HER). Liquid metals have been demonstrated to be an ideal substrate for large-area 2D Mo₂C growth. However, the growth mechanism of 2D Mo₂C on liquid metals has rarely been explored. Here we report the synthesis of high-quality 2D Mo₂C crystals and Mo₂C/graphene heterostructures on liquid Au by chemical vapor deposition method. A sunk growth mode of 2D Mo₂C on liquid Au substrates has revealed, by atomic force microscope characterizations, that some Mo₂C crystals grow below the level of Au terraces around tens of nanometers. Furthermore, graphene/Mo₂C heterostructure is controllably synthesized by tuning the hydrogen/carbon ratio, which is proven to be an enhanced electrocatalyst for HER against pure Mo₂C crystal grown on liquid Au substrates.

Kinetic modulation of graphene growth by fluorine through spatially confined decomposition of metal fluorides

Two-dimensional materials show a variety of promising properties, and controlling their growth is an important aspect for practical applications. To this end, active species such as hydrogen and oxygen are commonly introduced into reactors to promote the synthesis of two-dimensional materials with specific characteristics. Here, we demonstrate that fluorine can play a crucial role in tuning the growth kinetics of three representative two-dimensional materials (graphene, hexagonal boron nitride and WS₂). When growing graphene by chemical vapour deposition on a copper foil, fluorine released from the decomposition of a metal fluoride placed near the copper foil greatly accelerates the growth of the graphene (up to a rate of ~200 μm s^-1). Theoretical calculations show that it does so by promoting decomposition of the methane feedstock, which converts the endothermic growth process to an exothermic one. We further show that the presence of fluorine also accelerates the growth of two-dimensional hexagonal boron nitride and WS₂.

Growth of U-Shaped Graphene Domains on Copper Foil by Chemical Vapor Deposition

U-shaped graphene domains have been prepared on a copper substrate by chemical vapor deposition (CVD), which can be precisely tuned for the shape of graphene domains by optimizing the growth parameters. The U-shaped graphene is characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman. These show that the U-shaped graphene has a smooth edge, which is beneficial to the seamless stitching of adjacent graphene domains. We also studied the morphology evolution of graphene by varying the flow rate of hydrogen. These findings are more conducive to the study of morphology evolution, nucleation, and growth of graphene domains on the copper substrate.

Catalyst-Selective Growth of Single-Orientation Hexagonal Boron Nitride toward High-Performance Atomically Thin Electric Barriers

The ability to control the crystal orientation of 2D van der Waals (vdW) layered materials grown on large-scale substrates is crucial for tailoring their electrical properties, as well as for integration of functional 2D devices. In general, multiple orientations, i.e., two or four orientations, appear through the crystal rotational symmetry matching between the material and its substrate. Here, it is reported that hexagonal boron nitride (h-BN), an ideal electric barrier in the family of 2D materials, has a single orientation on inclined Cu (1 0 1) surfaces, where the Cu planes are tilted from the (1 0 1) facet around specific in-plane axes. Density functional theory (DFT) calculation indicates that this is a manifestation of only one favored h-BN orientation with the minimum vdW energy on the inclined Cu (1 0 1) surface. Moreover, thanks to the high interfacial strength with the underlying Cu, the single-orientation h-BN is free of thermal wrinkles, and exhibits a spatially homogeneous morphology and tunnel conductance. The findings point to a feasible approach to direct growth of single-orientation, wrinkle-free h-BN thin film for high-performance 2D electrical devices, and will be of benefit for controllable synthesis of other vdW materials.

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

It is essentially important to synthesize uniform graphene films with a controlled number of layers because their properties strongly depend on the number of layers. Although chemical vapor deposition (CVD) on Cu has been widely used to synthesize large-area graphene films, the growth on solid and liquid Cu (L-Cu) suffers from poor thickness uniformity with a great number of adlayers and difficulty in forming continuous films even after a long growth time of hours, respectively. Here, we found that nonuniform graphene films initially grown on solid Cu (S-Cu) foil can rapidly transform into continuously uniform monolayer graphene film on L-Cu within 3 min. Moreover, the films obtained show larger grain size, higher quality, better optical and electrical properties, and better performance in organic light-emitting diode applications than the original films grown on S-Cu foil. By using carbon isotope labeling, we revealed that the multilayer-to-monolayer transition of graphene on L-Cu experiences etching-"self-aligning"-coalescence processes. This two-step CVD method not only opens up a new way for the rapid growth of uniform monolayer graphene films but also provides helpful information for the controlled growth of uniform monolayers of other 2D materials such as monolayer h-BN.

Controlled Growth of an Mo₂C-Graphene Hybrid Film as an Electrode in Self-Powered Two-Sided Mo₂C-Graphene/Sb₂S0.42Se2.58/TiO₂ Photodetectors

The monotonic work function of graphene makes it difficult to meet the electrode requirements of every device with different band structures. Two-dimensional (2D) transition metal carbides (TMCs), such as carbides in MXene, are considered good candidates for electrodes as a complement to graphene. Carbides in MXene have been used to make electrodes for use in devices such as lithium batteries. However, the small lateral size and thermal instability of carbides in MXene, synthesized by the chemically etching method, limit its application in optoelectronic devices. The chemical vapor deposition (CVD) method provides a new way to obtain high-quality ultrathin TMCs without functional groups. However, the TMCs film prepared by the CVD method tends to grow vertically during the growth process, which is disadvantageous for its application in the transparent electrode. Herein, we prepared an ultrathin Mo₂C—graphene (Mo₂C—Gr) hybrid film by CVD to solve the above problem. The work function of Mo₂C—Gr is between that of graphene and a pure Mo₂C film. The Mo₂C—Gr hybrid film was selected as a transparent hole-transporting layer to fabricate novel Mo₂C—Gr/Sb₂S_0.42Se_2.58/TiO₂ two-sided photodetectors. The Mo₂C—Gr/Sb₂S_0.42Se_2.58/TiO₂/fluorine-doped tin oxide (FTO) device could detect light from both the FTO side and the Mo₂C—Gr side. The device could realize a short response time (0.084 ms) and recovery time (0.100 ms). This work is believed to provide a powerful method for preparing Mo₂C—graphene hybrid films and reveals its potential applications in optoelectronic devices.

Direct CVD Growth of Graphene on Traditional Glass: Methods and Mechanisms

Chemical vapor deposition (CVD) on catalytic metal surfaces is considered to be the most effective way to obtain large-area, high-quality graphene films. For practical applications, a transfer process from metal catalysts to target substrates (e.g., poly(ethylene terephthalate) (PET), glass, and SiO₂ /Si) is unavoidable and severely degrades the quality of graphene. In particular, the direct growth of graphene on glass can avoid the tedious transfer process and endow traditional glass with prominent electrical and thermal conductivities. Such a combination of graphene and glass creates a new type of glass, the so-called "super graphene glass," which has attracted great interest from the viewpoints of both fundamental research and daily-life applications. In the last few years, great progress has been achieved in pursuit of this goal. Here, these growth methods as well as the specific growth mechanisms of graphene on glass surfaces are summarized. The typical techniques developed include direct thermal CVD growth, molten-bed CVD growth, metal-catalyst-assisted growth, and plasma-enhanced growth. Emphasis is placed on the strategy of growth corresponding to the different natures of glass substrates. A comprehensive understanding of graphene growth on nonmetal glass substrates and the latest status of "super graphene glass" production are provided.

Controllable Growth of Graphene on Liquid Surfaces

Controllable fabrication of graphene is necessary for its practical application. Chemical vapor deposition (CVD) approaches based on solid metal substrates with morphology-rich surfaces, such as copper (Cu) and nickel (Ni), suffer from the drawbacks of inhomogeneous nucleation and uncontrollable carbon precipitation. Liquid substrates offer a quasiatomically smooth surface, which enables the growth of uniform graphene layers. The fast surface diffusion rates also lead to unique growth and etching kinetics for achieving graphene grains with novel morphologies. The rheological surface endows the graphene grains with self-adjusted rotation, alignment, and movement that are driven by specific interactions. The intermediary-free transfer or the direct growth of graphene on insulated substrates is demonstrated using liquid metals. Here, the controllable growth process of graphene on a liquid surface to promote the development of attractive liquid CVD strategies is in focus. The exciting progress in controlled growth, etching, self-assembly, and delivery of graphene on a liquid surface is presented and discussed in depth. In addition, prospects and further developments in these exciting fields of graphene growth on a liquid surface are discussed.

Toward Mass Production of CVD Graphene Films

Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.

Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems

Epitaxy traditionally refers to the growth of a crystalline adlayer on a crystalline surface, and has been demonstrated in several simple material systems over decades. Beyond this, it is not clear whether the growth of 2D materials on templates of various dimensionalities is possible, and no effective theory or model is available for describing the complex epitaxial growth kinetics. Here a library of hexagonal boron nitride epitaxy is presented on graphene-hexagonal boron nitride templates of various dimensionalities, including 2D homo/heteromaterial surface and 1D interfaces of homo/heteromaterials. A framework that allows the description of various kinetic growth by combined geometric and structural modeling is developed. Using these tools, the underlying mechanisms for the complex merging process, grain boundary formation, edge-configuration-dependent growth difference, position-dependent size difference, and the correlation among epilayer orientation, crystal structure and geometry are elucidated. This work provides a general viewpoint for understanding epitaxial growth in complex systems.

Kinetics of Graphene and 2D Materials Growth

During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

Effect of Water on the Manifestation of the Reaction Selectivity of Nitrogen-Doped Graphene Nanoclusters toward Oxygen Reduction Reaction

We investigated the selectivity of N-doped graphene nanoclusters (N-GNCs) toward the oxygen reduction reaction (ORR) using first-principles calculations within the density functional theory. The results show that the maximum electrode potentials (U _Max) for the four-electron (4e^-) pathway are higher than those for the two-electron (2e^-) pathway at almost all of the reaction sites. Thus, the N-GNCs exhibit high selectivity for the 4e^- pathway, that is, the 4e^- reduction proceeds preferentially over the 2e^- reduction. Such high selectivity results in high durability of the catalyst because H₂O₂, which corrodes the electrocatalyst, is not generated. For the doping sites near the edge of the cluster, the value of U _Max greatly depends on the reaction sites. However, for the doping sites around the center of the cluster, the reaction-site dependence is hardly observed. The GNC with a nitrogen atom around the center of the cluster exhibits higher ORR catalytic capability compared with the GNC with a nitrogen atom in the vicinity of the edge. The results also reveal that the water molecule generated by the ORR enhances the selectivity toward the 4e^- pathway because the reaction intermediates are significantly stabilized by water.

Controllable Fabrication of Graphene and Related Two-Dimensional Materials on Liquid Metals via Chemical Vapor Deposition

Due to the confinement of the charge, spin, and heat transport in the plane, graphene and related two-dimensional (2D) materials have been demonstrated to own many unique and excellent properties and witnessed many breakthroughs in physics. They show great application potential in many fields, especially for electronics and optoelectronics. However, a bottleneck to widespread applications is precise and reliable fabrication, in which the control of the layer number and domain assembly is the most basic and important since they directly determine the qualities and properties of 2D materials. The chemical vapor deposition (CVD) strategy was regarded as the frontrunner to achieve this target, and the design of the catalytic substrate is of great significance since it has the most direct influence on the catalysis and mass transfer, which can be the most essential elemental steps. In recent years, as compared to traditional solid metal catalysts, the emergence of liquid metal catalysts has brought a brand-new perspective and contributes to a huge change and optimization in the fabrication of 2D materials. On one hand, strictly self-limited growth behavior is discovered and is robust to the variation of the growth parameters. The atoms in the liquid metal tend to move intensely and arrange in an amorphous and isotropic way. The liquid surface is smooth and isotropic, and the vacancies in the fluidic liquid phase enable the embedding of heteroatoms. The phase transition from liquid to solid will facilitate the unique control of the mass-transfer path, which can trigger new growth mechanisms. On the other hand, the excellent rheological properties of liquid metals allow us to explore self-assembly of the 2D materials grown on the surface, which can activate new applications based on the derived collective properties, such as the integrated devices. Indeed, liquid metals show many unique behaviors in the catalytic growth and assembly of 2D materials. Thus, this Account aims to highlight the controllable fabrication of graphene and related 2D materials on liquid metals. By utilizing the phase transition of liquid metals, the segregation of precursors in the bulk can be controlled, leading to self-limited growth. By utilizing the fluidity of the liquid metals, 2D material crystals can achieve self-assembly on their surface, including oriented stitching, ordered assembly, and heterostacking, which enables the creation of new multilevel or hybrid structures, leading to property and function extension and even the emergence of new physics. Finally, the unique liquid characteristic of liquid metals can also offer us new ideas about the transfer process. By utilizing the shear transformation of liquid metals, the direct sliding transfer of 2D materials onto arbitrary substrates can be realized. The research concerning the self-limited growth, self-assembly, and sliding transfer of 2D materials on liquid metals is just raising the curtain on the behavioral study of 2D materials on liquid metals. We believe these primary technology developments revealed by liquid metals will establish a solid foundation for both fundamental research and practical application of 2D materials.

Preparation of Ultra-Smooth Cu Surface for High-Quality Graphene Synthesis

As grown graphene by chemical vapor deposition typically degrades greatly due to the presence of grain boundaries, which limit graphene's excellent properties and integration into advanced applications. It has been demonstrated that there is a strong correlation between substrate morphology and graphene domain density. Here, we investigate how thermal annealing and electro-polishing affects the morphology of Cu foils. Ultra-smooth Cu surfaces can be achieved and maintained at elevated temperatures by electro-polishing after a pre-annealing treatment. This technique has shown to be more effective than just electro-polishing the Cu substrate without pre-annealing. This may be due to the remaining dislocations and point defects within the Cu bulk material moving to the surface when the Cu is heated. Likewise, a pre-annealing step may release them. Graphene grown on annealed electro-polished Cu substrates show a better quality in terms of lower domain density and higher layer uniformity than those grown on Cu substrates with only annealing or only electro-polishing treatment.

Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst

Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO₂ as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.

Hexagon Flower Quantum Dot-like Cu Pattern Formation during Low-Pressure Chemical Vapor Deposited Graphene Growth on a Liquid Cu/W Substrate

The H₂-induced etching of low-dimensional materials is of significant interest for controlled architecture design of crystalline materials at the micro- and nanoscale. This principle is applied to the thinnest crystalline etchant, graphene. In this study, by using a high H₂ concentration, the etched hexagonal holes of copper quantum dots (Cu QDs) were formed and embedded into the large-scale graphene region by low-pressure chemical vapor deposition on a liquid Cu/W surface. With this procedure, the hexagon flower-etched Cu patterns were formed in a H₂ environment at a higher melting temperature of Cu foil (1090 °C). The etching into the large-scale graphene was confirmed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman analysis. This first observation could be an intriguing case for the fundamental study of low-dimensional material etching during chemical vapor deposition growth; moreover, it may supply a simple approach for the controlled etching/growth. In addition, it could be significant in the fabrication of controllable etched structures based on Cu QD patterns for nanoelectronic devices as well as in-plane heterostructures on other low-dimensional materials in the near future.

Vapour-liquid-solid growth of monolayer MoS2 nanoribbons

Chemical vapour deposition of two-dimensional materials typically involves the conversion of vapour precursors to solid products in a vapour-solid-solid mode. Here, we report the vapour-liquid-solid growth of monolayer MoS₂, yielding highly crystalline ribbons with a width of few tens to thousands of nanometres. This vapour-liquid-solid growth is triggered by the reaction between MoO₃ and NaCl, which results in the formation of molten Na-Mo-O droplets. These droplets mediate the growth of MoS₂ ribbons in the 'crawling mode' when saturated with sulfur. The locally well-defined orientations of the ribbons reveal the regular horizontal motion of the droplets during growth. Using atomic-resolution scanning transmission electron microscopy and second harmonic generation microscopy, we show that the ribbons are grown homoepitaxially on monolayer MoS₂ with predominantly 2H- or 3R-type stacking. Our findings highlight the prospects for the controlled growth of atomically thin nanostructure arrays for nanoelectronic devices and the development of unique mixed-dimensional structures.

Solution processing of two-dimensional black phosphorus

Phosphorene, or two-dimensional (2D) black phosphorus (BP) was the first synthetic 2D elemental allotrope beyond graphene to be isolated and studied. It is useful due to its high p-type carrier mobility and direct band gap that is tunable in the range ca. 0.3-2 eV thus bridging the energy gap between graphene and transition metal dichalcogenides such as molybdenum disulfide. Beyond the 'Scotch-Tape' method that was used to isolate the first samples of 2D BP for prototype studies, a range of potentially scalable solution processing techniques emerged later that can produce electronics grade material. This feature article focuses on such solution-process routes to 2D BP and highlights challenges in processing the material, mainly caused by its susceptibility to oxidation, as well as illuminating new avenues and opportunities in the area.

A review of theoretical study of graphene chemical vapor deposition synthesis on metals: nucleation, growth, and the role of hydrogen and oxygen

Graphene has attracted intense research interest due to its extraordinary properties and great application potential. Various methods have been proposed for the synthesis of graphene, among which chemical vapor deposition has drawn a great deal of attention for synthesizing large-area and high-quality graphene. Theoretical understanding of the synthesis mechanism is crucial for optimizing the experimental design for desired graphene production. In this review, we discuss the three fundamental steps of graphene synthesis in details, i.e. (1) decomposition of carbon feedstocks and formation of various active carbon species, (2) nucleation, and (3) attachment and extension. We provide a complete scenario of graphene synthesis on metal surfaces at atomistic level by means of density functional theory, molecular dynamics (MD), Monte Carlo (MC) and their combination and interface with other simulation methods such as quantum mechanical molecular dynamics, density functional tight binding molecular dynamics, and combination of MD and MC. We also address the latest investigation of the influences of the hydrogen and oxygen on the synthesis and the quality of the synthesized graphene.

Seed-Initiated Anisotropic Growth of Unidirectional Armchair Graphene Nanoribbon Arrays on Germanium

It was recently discovered that the chemical vapor deposition (CVD) of CH₄ on Ge(001) can directly yield long, narrow, semiconducting nanoribbons of graphene with smooth armchair edges. These nanoribbons have exceptional charge transport properties compared with nanoribbons grown by other methods. However, the nanoribbons nucleate at random locations and at random times, problematically giving rise to width and bandgap polydispersity, and the mechanisms that drive the anisotropic crystal growth that produces the nanoribbons are not understood. Here, we study and engineer the seed-initiated growth of graphene nanoribbons on Ge(001). The use of seeds decouples nucleation and growth, controls where growth occurs, and allows graphene to grow with lattice orientations that do not spontaneously form without seeds. We discover that when the armchair direction (i.e., parallel to C-C bonds) of the seeds is aligned with the Ge⟨110⟩ family of directions, the growth anisotropy is maximized, resulting in the formation of nanoribbons with high-aspect ratios. In contrast, increasing misorientation from Ge⟨110⟩ yields decreasingly anisotropic crystals. Measured growth rate data are used to generate a construction analogous to a kinetic Wulff plot that quantitatively predicts the shape of graphene crystals on Ge(001). This knowledge is employed to fabricate regularly spaced, unidirectional arrays of nanoribbons and to significantly improve their uniformity. These results show that seed-initiated graphene synthesis on Ge(001) will be a viable route for creating wafer-scale arrays of narrow, semiconducting, armchair nanoribbons with rationally controlled placement and alignment for a wide range of semiconductor electronics technologies, provided that dense arrays of sub-10 nm seeds can be uniformly fabricated in the future.

Switching isotropic and anisotropic graphene growth in a solid source CVD system

Controlling the flow rate of carrier gases tunes the mode of growth from anisotropic to isotropic along with enlarging the crystal size.

Homoepitaxial Growth of Large-Scale Highly Organized Transition Metal Dichalcogenide Patterns

Controllable growth of highly crystalline transition metal dichalcogenide (TMD) patterns with regular morphology and unique edge structure is highly desired and important for fundamental research and potential applications. Here, single-crystalline MoS₂ flakes are reported with regular trigonal symmetric patterns that can be homoepitaxially grown on MoS₂ monolayer via chemical vapor deposition. The highly organized MoS₂ patterns are rhombohedral (3R)-stacked with the underlying MoS₂ monolayer, and their boundaries are predominantly terminated by zigzag Mo edge structure. The epitaxial MoS₂ crystals can be tailored from compact triangles to fractal flakes, and the pattern formation can be explained by the anisotropic growth rates of the S and Mo edges under low sulfur chemical potential. The 3R-stacked MoS₂ pattern demonstrates strong second and third-harmonic-generation signals, which exceed those reported for monolayer MoS₂ by a factor of 6 and 4, correspondingly. This homoepitaxial growth approach for making highly organized TMD patterns is also demonstrated for WS₂ .

Capabilities of transition metals in retarding the bonding of carbon atoms to minimize dendritic graphene

The avoidance of growing dendritic graphene on the copper substrate during the chemical vapor deposition process is greatly desired. Here we have identified a mechanism, in which (1) transition metal plates placed inside the copper pockets reduce the majority of active carbon atoms to eventually suppress the graphene growth rate, and (2) transition metals etch graphene C-C bonds along defective edges to grow into zigzag-edge ending domains with higher priorities. Via isotopic labeling of the methane method, we have observed bright-dark-alternating hexagonal-shaped rings, which are shown in Raman mapping images. Under a hydrogen atmosphere, we are capable of acquiring hexagonal openings within graphene domains by means of transition-metal-driven catalytic etching. This methodology may work as a simple and convenient way to determine graphene size and crystal orientation, and may enable the etching of graphene into smooth and ordered zigzag edge nanoribbons without compromising the quality of graphene.

Near room temperature chemical vapor deposition of graphene with diluted methane and molten gallium catalyst

Direct growth of graphene integrated into electronic devices is highly desirable but difficult due to the nominal ~1000 °C chemical vapor deposition (CVD) temperature, which can seriously deteriorate the substrates. Here we report a great reduction of graphene CVD temperature, down to 50 °C on sapphire and 100 °C on polycarbonate, by using dilute methane as the source and molten gallium (Ga) as catalysts. The very low temperature graphene synthesis is made possible by carbon attachment to the island edges of pre-existing graphene nuclei islands, and causes no damages to the substrates. A key benefit of using molten Ga catalyst is the enhanced methane absorption in Ga at lower temperatures; this leads to a surprisingly low apparent reaction barrier of ~0.16 eV below 300 °C. The faster growth kinetics due to a low reaction barrier and a demonstrated low-temperature graphene nuclei transfer protocol can facilitate practical direct graphene synthesis on many kinds of substrates down to 50-100 °C. Our results represent a significant progress in reducing graphene synthesis temperature and understanding its mechanism.

Theory of Finite-Length Grain Boundaries of Controlled Misfit Angle in Two-Dimensional Materials

Grain boundaries in two-dimensional crystals are usually thought to separate distinct crystallites and as such they must either form closed loops or terminate at the boundary of a sample. However, when an atomically thin two-dimensional crystal grows on a substrate of nonzero Gaussian curvature, it can develop finite-length grain boundaries that terminate abruptly within a monocrystalline domain. We show that by properly designing the substrate topography, these grain boundaries can be placed at desired locations and at specified misfit angles, as the thermodynamic ground state of a two-dimensional (2D) system bound to a substrate. Compared against the hypothetical competition of growing defectless 2D materials on a Gaussian-curved substrate with consequential fold development or detachment from the substrate, the nucleation and formation of finite-length grain boundaries can be made energetically favorably given sufficient substrate adhesion on the order of tens of meV/Ų for typical 2D materials. New properties specific to certain grain boundary geometries, including magnetism and metallicity, can thus be engineered into 2D crystals through topographic design of their substrates.

Direct Synthesis of Large-Area 2D Mo2 C on In Situ Grown Graphene

As a new member of the MXene group, 2D Mo₂ C has attracted considerable interest due to its potential application as electrodes for energy storage and catalysis. The large-area synthesis of Mo₂ C film is needed for such applications. Here, the one-step direct synthesis of 2D Mo₂ C-on-graphene film by molten copper-catalyzed chemical vapor deposition (CVD) is reported. High-quality and uniform Mo₂ C film in the centimeter range can be grown on graphene using a Mo-Cu alloy catalyst. Within the vertical heterostructure, graphene acts as a diffusion barrier to the phase-segregated Mo and allows nanometer-thin Mo₂ C to be grown. Graphene-templated growth of Mo₂ C produces well-faceted, large-sized single crystals with low defect density, as confirmed by scanning transmission electron microscopy (STEM) measurements. Due to its more efficient graphene-mediated charge-transfer kinetics, the as-grown Mo₂ C-on-graphene heterostructure shows a much lower onset voltage for hydrogen evolution reactions as compared to Mo₂ C-only electrodes.

The Way towards Ultrafast Growth of Single-Crystal Graphene on Copper

The exceptional properties of graphene make it a promising candidate in the development of next-generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large-sized single-crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial-level wafer-scale or beyond (e.g. 30 cm in diameter) single-crystal graphene. Another possible way to obtain large single-crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single-crystal graphene, and is also of great significance to realize large-scale production of graphene films (fast growth is more time-efficient and cost-effective), which is likely to accelerate various graphene applications in industry.