Magic-angle twisted bilayer graphene under orthogonal and in-plane magnetic fields

We investigate the effect of a magnetic field on the band structure of bilayer graphene with a magic twist angle of 1.08∘. The coupling of a tight-binding model and the Peierls phase allows the calculation of the energy bands of periodic two-dimensional systems. For an orthogonal magnetic field, the Landau levels are dispersive, particularly for magnetic lengths comparable to or larger than the twisted bilayer cell size. A high in-plane magnetic field modifies the low-energy bands and gap, which we demonstrate to be a direct consequence of the minimal coupling.

Moiré band renormalization due to lattice mismatch in bilayer graphene

We investigated the band renormalization caused by the compressive-strain-induced lattice mismatch in parallel AA stacked bilayer graphene using two complementary methods: the tight-binding approach and the low-energy continuum theory. While a large mismatch does not alter the low-energy bands, a small one reduces the bandwidth of the low-energy bands along with a decrease in the Fermi velocity. In the tiny-mismatch regime, the low-energy continuum theory reveals that the long-period moiré pattern extensively renormalizes the low-energy bands, resulting in a significant reduction of bandwidth. Meanwhile, the Fermi velocity exhibits an oscillatory behavior and approaches zero at specific mismatches. However, the resulting low-energy bands are not perfectly isolated flat, as seen in twisted bilayer graphene at magic angles. These findings provide a deeper understanding of moiré physics and offer valuable guidance for related experimental studies in creating moiré superlattices using two-dimensional van der Waals heterostructures.

Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric phase diagram under an out-of-plane electric field, exhibiting correlated insulating state and ferromagnetic state respectively when reversing the field direction. Revealing how the electronic structure evolves with electric field is critical for providing a better understanding of such asymmetric field-tunable properties. Here we report the experimental observation of field-tunable dichotomic electronic structure of tMBG by nanospot angle-resolved photoemission spectroscopy (NanoARPES) with operando gating. Interestingly, selective enhancement of the relative spectral weight contributions from monolayer and bilayer graphene is observed when switching the polarity of the bias voltage. Combining experimental results with theoretical calculations, the origin of such field-tunable electronic structure, resembling either tBLG or twisted double-bilayer graphene (tDBG), is attributed to the selectively enhanced contribution from different stacking graphene layers with a strong electron-hole asymmetry. Our work provides electronic structure insights for understanding the rich field-tunable physics of tMBG.

Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics

The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".

Topology-Engineered Orbital Hall Effect in Two-Dimensional Ferromagnets

Recent advances in the manipulation of the orbital angular momentum (OAM) within the paradigm of orbitronics presents a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi2Te4 as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work, we open up new possibilities for innovative applications in topological spintronics and orbitronics.

Band-driven switching of magnetism in a van der Waals magnetic semimetal

Magnetic semimetals form an attractive class of materials because of the nontrivial contributions of itinerant electrons to magnetism. Because of their relatively low-carrier-density nature, a doping level of those materials could be largely tuned by a gating technique. Here, we demonstrate gate-tunable ferromagnetism in an emergent van der Waals magnetic semimetal Cr3Te4 based on an ion-gating technique. Upon doping electrons into the system, the Curie temperature (TC) sharply increases, approaching near to room temperature, and then decreases to some extent. This non-monotonous variation of TC accompanies the switching of the magnetic anisotropy, synchronously followed by the sign changes of the ordinary and anomalous Hall effects. Those results clearly elucidate that the magnetism in Cr3Te4 should be governed by its semimetallic band nature.

Topological minibands and interaction driven quantum anomalous Hall state in topological insulator based moiré heterostructures

The presence of topological flat minibands in moiré materials provides an opportunity to explore the interplay between topology and correlation. In this work, we study moiré minibands in topological insulator films with two hybridized surface states under a moiré superlattice potential created by two-dimensional insulating materials. We show the lowest conduction (highest valence) Kramers' pair of minibands can beZ 2 non-trivial when the minima (maxima) of moiré potential approximately form a hexagonal lattice with six-fold rotation symmetry. Coulomb interaction can drive the non-trivial Kramers' minibands into the quantum anomalous Hall state when they are half-filled, which is further stabilized by applying external gate voltages to break inversion. We propose the monolayer Sb2 on top of Sb2Te3 films as a candidate based on first principles calculations. Our work demonstrates the topological insulator based moiré heterostructure as a potential platform for studying interacting topological phases.

Topological Flat Bands in Graphene Super-Moiré Lattices

Moiré-pattern-based potential engineering has become an important way to explore exotic physics in a variety of two-dimensional condensed matter systems. While these potentials have induced correlated phenomena in almost all commonly studied 2D materials, monolayer graphene has remained an exception. We demonstrate theoretically that a single layer of graphene, when placed between two bulk boron nitride crystal substrates with the appropriate twist angles, can support a robust topological ultraflat band emerging as the second hole band. This is one of the simplest platforms to design and exploit topological flat bands.

Layer-polarized ferromagnetism in rhombohedral multilayer graphene

Flat-band systems with strongly correlated electrons can exhibit a variety of phenomena, such as correlated insulating and topological states, unconventional superconductivity, and ferromagnetism. Rhombohedral multilayer graphene has recently emerged as a promising platform for investigating exotic quantum states due to its hosting of topologically protected surface flat bands at low energy, which have a layer-dependent energy dispersion. However, the complex relationship between the surface flat bands and the highly dispersive high-energy bands makes it difficult to study correlated surface states. In this study, we introduce moiré superlattices as a method to isolate the surface flat bands of rhombohedral multilayer graphene. The observed pronounced screening effects in the moiré potential-modulated rhombohedral multilayer graphene indicate that the two surface states are electronically decoupled. The flat bands that are isolated promote correlated surface states in areas that are distant from the charge neutrality points. Notably, we observe tunable layer-polarized ferromagnetism, which is evidenced by a hysteretic anomalous Hall effect. This is achieved by polarizing the surface states with finite displacement fields.

Influence of electronic correlation on the valley and topological properties of VSiGeP4 monolayer

Valley is used as a new degree of freedom for information encoding and storage. In this work, the valley and topological properties of the VSiGeP4 monolayer were studied by adjusting the U value based on first-principles calculations. The VSiGeP4 monolayer remains in a ferromagnetic ground state regardless of the change in the U value. The magnetic anisotropy of the VSiGeP4 monolayer is initially in-plane, and then turns out-of-plane with the increase in the U value. Moreover, a topological phase transition is observed in the present VSiGeP4 monolayer with the increase in U value from 0 to 3 eV, i.e., the VSiGeP4 monolayer behaves as a bipolar magnetic semiconductor, a ferrovalley semiconductor, a half-valley metal characteristic, and a quantum anomalous Hall state. The mechanism of the topological phase transition behavior of the VSiGeP4 monolayer was analyzed. It was found that the variation in U values would change the strength of the electronic correlation effect, resulting in the valley and topological properties. In addition, carrier doping was studied to design a valleytronic device using this VSiGeP4 monolayer. By doping 0.05 electrons per f.u., the VSiGeP4 monolayer with a U value of 3 eV exhibits 100% spin polarization. This study indicates that the VSiGeP4 monolayer has potential applications in spintronic, valleytronic, and topological electronic nanodevices.

Correlation-Induced Symmetry-Broken States in Large-Angle Twisted Bilayer Graphene on MoS2

Strongly correlated states commonly emerge in twisted bilayer graphene (TBG) with "magic-angle" (1.1°), where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent requirement of this magic angle makes the sample preparation and the further application facing great challenges. Here, using scanning tunneling microscopy (STM) and spectroscopy (STS), we demonstrate that the correlation-induced symmetry-broken states can also be achieved in a 3.45° TBG, via engineering this nonmagic-angle TBG into regimes of U/W > 1. We enhance the e-e interaction through controlling the microscopic dielectric environment by using a MoS2 substrate. Simultaneously, the width of the low-energy van Hove singularity (VHS) peak is reduced by enhancing the interlayer coupling via STM tip modulation. When partially filled, the VHS peak exhibits a giant splitting into two states flanked by the Fermi level and shows a symmetry-broken LDOS distribution with a stripy charge order, which confirms the existence of strong correlation effect in our 3.45° TBG. Our result demonstrates the feasibility of the study and application of the correlation physics in TBGs with a wider range of twist angle.

Mapping the phase-separated state in a 2D magnet

Intrinsic 2D magnets have recently been established as a playground for studies on fundamentals of magnetism, quantum phases, and spintronic applications. The inherent instability at low dimensionality often results in coexistence and/or competition of different magnetic orders. Such instability of magnetic ordering may manifest itself as phase-separated states. In 4f 2D materials, magnetic phase separation is expressed in various experiments; however, the experimental evidence is circumstantial. Here, we employ a high-sensitivity MFM technique to probe the spatial distribution of magnetic states in the paradigmatic 4f 2D ferromagnet EuGe2. Below the ferromagnetic transition temperature, we discover the phase-separated state and follow its evolution with temperature and magnetic field. The characteristic length-scale of magnetic domains amounts to hundreds of nanometers. These observations strongly shape our understanding of the magnetic states in 2D materials at the monolayer limit and contribute to engineering of ultra-compact spintronics.

Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures

Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.

Torsional force microscopy of van der Waals moirés and atomic lattices

In a stack of atomically thin van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult; hence, determining that twist angle and mapping its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that torsional force microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN) and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an Atomic Force Microscope (AFM) cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of van der Waals flakes to support predictable moiré heterostructure fabrication.

Van der Waals epitaxy of tunable moirés enabled by alloying

The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible. While rotationally aligned, lattice-mismatched moirés such as WSe2/WS2 can be synthesized, they lack the critical moiré period tunability, and their formation mechanisms are not well understood. Here, we report the thermodynamically driven van der Waals epitaxy of moirés with a tunable period from 10 to 45 nanometres, using lattice mismatch engineering in two WSSe layers with adjustable chalcogen ratios. Contrary to conventional epitaxy, where lattice-mismatch-induced stress hinders high-quality growth, we reveal the key role of bulk stress in moiré formation and its unique interplay with edge stress in shaping the moiré growth modes. Moreover, the superlattices display tunable interlayer excitons and moiré intralayer excitons. Our studies unveil the epitaxial science of moiré synthesis and lay the foundations for moiré-based technologies.

Angle-resolved transport non-reciprocity and spontaneous symmetry breaking in twisted trilayer graphene

The identification and characterization of spontaneous symmetry breaking is central to our understanding of strongly correlated two-dimensional materials. In this work, we utilize the angle-resolved measurements of transport non-reciprocity to investigate spontaneous symmetry breaking in twisted trilayer graphene. By analysing the angular dependence of non-reciprocity in both longitudinal and transverse channels, we are able to identify the symmetry axis associated with the underlying electronic order. We report that a hysteretic rotation in the mirror axis can be induced by thermal cycles and a large current bias, supporting the spontaneous breaking of rotational symmetry. Moreover, the onset of non-reciprocity with decreasing temperature coincides with the emergence of orbital ferromagnetism. Combined with the angular dependence of the superconducting diode effect, our findings uncover a direct link between rotational and time-reversal symmetry breaking. These symmetry requirements point towards exchange-driven instabilities in momentum space as a possible origin for transport non-reciprocity in twisted trilayer graphene.

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.

Stacking Order Engineering of Two-Dimensional Materials and Device Applications

Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.

Moiré effect enables versatile design of topological defects in nematic liquid crystals

Recent advances in surface-patterning techniques of liquid crystals have enabled the precise creation of topological defects, which promise a variety of emergent applications. However, the manipulation and application of these defects remain limited. Here, we harness the moiré effect to engineer topological defects in patterned nematic liquid crystal cells. Specifically, we combine simulation and experiment to examine a nematic cell confined between two substrates of periodic surface anchoring patterns; by rotating one surface against the other, we observe a rich variety of highly tunable, novel topological defects. These defects are shown to guide the three-dimensional self-assembly of colloids, which can conversely impact defects by preventing the self-annihilation of loop-defects through jamming. Finally, we demonstrate that certain nematic moiré cells can engender arbitrary shapes represented by defect regions. As such, the proposed simple twist method enables the design and tuning of mesoscopic structures in liquid crystals, facilitating applications including defect-directed self-assembly, material transport, micro-reactors, photonic devices, and anti-counterfeiting materials.

Vestigial singlet pairing in a fluctuating magnetic triplet superconductor and its implications for graphene superlattices

Stacking and twisting graphene layers allows to create and control a two-dimensional electron liquid with strong correlations. Experiments indicate that these systems exhibit strong tendencies towards both magnetism and triplet superconductivity. Motivated by this phenomenology, we study a 2D model of fluctuating triplet pairing and spin magnetism. Individually, their respective order parameters, d and N, cannot order at finite temperature. Nonetheless, the model exhibits a variety of vestigial phases, including charge-4e superconductivity and broken time-reversal symmetry. Our main focus is on a phase characterized by finite d ⋅ N, which has the same symmetries as the BCS state, a Meissner effect, and metastable supercurrents, yet rather different spectral properties: most notably, the suppression of the electronic density of states at the Fermi level can resemble that of either a fully gapped or nodal superconductor, depending on parameters. This provides a possible explanation for recent tunneling experiments in the superconducting phase of graphene moiré systems.

High density electron doping in boron-doped twisted bilayer graphene: a ladder to extended flat-band

Realizing Von Hove singularity (VHS) and extended flat bands of graphene near the Fermi level (EF) is of great significance to explore many-body interactions, with a high tendency towards superconductivity. In this study, we report that the VHS of π* bands near EF can be realized by high-density lithium intercalation in p-type doped twisted bilayer graphene (tBLG). First, a method to predict the highest lithium intercalation in tBLG systems with arbitrary twist angle was established which proves that the interlayer twisting leads to the clustering of lithium ions in the AA-region but reduces the overall concentration. Second, we show that the p-type doping (1.35% boron) in tBLGs enhances their electron acceptance capability by increasing lithium intercalation up to 47%. In this situation, the electron doping by lithium intercalation is sufficient to shift EF near the VHS which offers a strategic path to realize extended flat bands, and to investigate the strong correlations in the tBLG systems.

Ultrafast Umklapp-assisted electron-phonon cooling in magic-angle twisted bilayer graphene

Understanding electron-phonon interactions is fundamentally important and has crucial implications for device applications. However, in twisted bilayer graphene near the magic angle, this understanding is currently lacking. Here, we study electron-phonon coupling using time- and frequency-resolved photovoltage measurements as direct and complementary probes of phonon-mediated hot-electron cooling. We find a remarkable speedup in cooling of twisted bilayer graphene near the magic angle: The cooling time is a few picoseconds from room temperature down to 5 kelvin, whereas in pristine bilayer graphene, cooling to phonons becomes much slower for lower temperatures. Our experimental and theoretical analysis indicates that this ultrafast cooling is a combined effect of superlattice formation with low-energy moiré phonons, spatially compressed electronic Wannier orbitals, and a reduced superlattice Brillouin zone. This enables efficient electron-phonon Umklapp scattering that overcomes electron-phonon momentum mismatch. These results establish twist angle as an effective way to control energy relaxation and electronic heat flow.

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi_{2}Te_{4}

We propose an intrinsic mechanism to understand the even-odd effect, namely, opposite signs of anomalous Hall resistance and different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi_{2}Te_{4} thin films with electron doping. The nonzero hysteresis loops in the anomalous Hall effect and magnetic circular dichroism for even-SLs MnBi_{2}Te_{4} films originate from two different antiferromagnetic (AFM) configurations with different zeroth Landau level energies of surface states. The complex form of the anomalous Hall hysteresis loop can be understood from two magnetic transitions, a transition between two AFM states followed by a second transition to the ferromagnetic state. Our model also clarifies the relationship and distinction between axion parameter and magnetoelectric coefficient, and shows an even-odd oscillation behavior of magnetoelectric coefficients in MnBi_{2}Te_{4} films.

Magic Momenta and Three-Dimensional Landau Levels from a Three-Dimensional Graphite Moiré Superlattice

In this Letter, we theoretically explore the physical properties of a new type of three-dimensional graphite moiré superlattice, the bulk alternating twisted graphite (ATG) system with homogeneous twist angle, which is grown by in situ chemical vapor decomposition method. Compared to twisted bilayer graphene (TBG), the bulk ATG system is bestowed with an additional wave vector degree of freedom due to the extra dimensionality. As a result, when the twist angle of bulk ATG is smaller than twice of the magic angle of TBG, there always exist "magic momenta" which host topological flat bands with vanishing in-plane Fermi velocities. Most saliently, when the twist angle is relatively large, a dispersionless three-dimensional zeroth Landau level would emerge in the bulk ATG, which may give rise to robust three-dimensional quantum Hall effects and unusual quantum-Hall physics over a large range of twist angles.

Transport Anisotropy in One-Dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit

One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving the electron-lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZr_{0.2}Ti_{0.8}O_{3} back gates patterned with periodic, 100-200 nm wide stripe domains. Because of band reconstruction, the h-BN top gating induces satellite Dirac points in samples with current along the superlattice vector s[over ^], a feature absent in samples with current perpendicular to s[over ^]. The satellite Dirac point position scales with the superlattice period (L) as ∝L^{β}, with β=-1.18±0.06. These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to s[over ^] quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena.

Dynamically tunable moiré exciton Rydberg states in a monolayer semiconductor on twisted bilayer graphene

Moiré excitons are emergent optical excitations in two-dimensional semiconductors with moiré superlattice potentials. Although these excitations have been observed on several platforms, a system with dynamically tunable moiré potential to tailor their properties is yet to be realized. Here we present a continuously tunable moiré potential in monolayer WSe2, enabled by its proximity to twisted bilayer graphene (TBG) near the magic angle. By tuning local charge density via gating, TBG provides a spatially varying and dynamically tunable dielectric superlattice for modulation of monolayer WSe2 exciton wave functions. We observed emergent moiré exciton Rydberg branches with increased energy splitting following doping of TBG due to exciton wave function hybridization between bright and dark Rydberg states. In addition, emergent Rydberg states can probe strongly correlated states in TBG at the magic angle. Our study provides a new platform for engineering moiré excitons and optical accessibility to electronic states with small correlation gaps in TBG.

Correlated insulator and Chern insulators in pentalayer rhombohedral-stacked graphene

Rhombohedral-stacked multilayer graphene hosts a pair of flat bands touching at zero energy, which should give rise to correlated electron phenomena that can be tuned further by an electric field. Moreover, when electron correlation breaks the isospin symmetry, the valley-dependent Berry phase at zero energy may give rise to topologically non-trivial states. Here we measure electron transport through hexagonal boron nitride-encapsulated pentalayer graphene down to 100 mK. We observed a correlated insulating state with resistance at the megaohm level or greater at charge density n = 0 and displacement field D = 0. Tight-binding calculations predict a metallic ground state under these conditions. By increasing D, we observed a Chern insulator state with C = -5 and two other states with C = -3 at a magnetic field of around 1 T. At high D and n, we observed isospin-polarized quarter- and half-metals. Hence, rhombohedral pentalayer graphene exhibits two different types of Fermi-surface instability, one driven by a pair of flat bands touching at zero energy, and one induced by the Stoner mechanism in a single flat band. Our results establish rhombohedral multilayer graphene as a suitable system for exploring intertwined electron correlation and topology phenomena in natural graphitic materials without the need for moiré superlattice engineering.

Probing Interlayer Interactions and Commensurate-Incommensurate Transition in Twisted Bilayer Graphene through Raman Spectroscopy

Twisted 2D layered materials have garnered much attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation/twist angle between the adjacent layers. In this work, we explore a prototype of such a twisted 2D system, artificially stacked twisted bilayer graphene (TBLG), where we probe, using Raman spectroscopy, the changes in the interlayer interactions and electron-phonon scattering pathways as the twist angle is varied from 0° to 30°. The long-range Moiré potential of the superlattice gives rise to additional intravalley and intervalley scattering of the electrons in TBLG, which has been investigated through their Raman signatures. Density functional theory (DFT) calculations of the electronic band structure of the TBLG superlattices were found to be in agreement with the resonant Raman excitations across the van Hove singularities in the valence and conduction bands predicted for TBLG due to hybridization of bands from the two layers. We also observe that the relative rotation between the graphene layers has a marked influence on the second order overtone and combination Raman modes signaling a commensurate-incommensurate transition in TBLG as the twist angle increases. This serves as a convenient and rapid characterization tool to determine the degree of commensurability in TBLG systems.

Optical properties and plasmons in moiré structures

The discoveries of numerous exciting phenomena in twisted bilayer graphene (TBG) are stimulating significant investigations on moiré structures that possess a tunable moiré potential. Optical response can provide insights into the electronic structures and transport phenomena of non-twisted and twisted moiré structures. In this article, we review both experimental and theoretical studies of optical properties such as optical conductivity, dielectric function, non-linear optical response, and plasmons in moiré structures composed of graphene, hexagonal boron nitride (hBN), and/or transition metal dichalcogenides. Firstly, a comprehensive introduction to the widely employed methodology on optical properties is presented. After, moiré potential induced optical conductivity and plasmons in non-twisted structures are reviewed, such as single layer graphene-hBN, bilayer graphene-hBN and graphene-metal moiré heterostructures. Next, recent investigations of twist-angle dependent optical response and plasmons are addressed in twisted moiré structures. Additionally, we discuss how optical properties and plasmons could contribute to the understanding of the many-body effects and superconductivity observed in moiré structures.

Enhanced Superconducting Diode Effect due to Coexisting Phases

The superconducting diode effect refers to an asymmetry in the critical supercurrent J_{c}(n[over ^]) along opposite directions, J_{c}(n[over ^])≠J_{c}(-n[over ^]). While the basic symmetry requirements for this effect are known, it is, for junction-free systems, difficult to capture within current theoretical models the large current asymmetries J_{c}(n[over ^])/J_{c}(-n[over ^]) recently observed in experiment. We here propose and develop a theory for an enhancement mechanism of the diode effect arising from spontaneous symmetry breaking. We show-both within a phenomenological and a microscopic theory-that there is a coupling of the supercurrent and the underlying symmetry-breaking order parameter. This coupling can enhance the current asymmetry significantly. Our work might not only provide a possible explanation for recent experiments on trilayer graphene but also pave the way for future realizations of the superconducting diode effect with large current asymmetries.

Terahertz linear/non-linear anomalous Hall conductivity of moiré TMD hetero-nanoribbons as topological valleytronics materials

Twisted moiré van der Waals heterostructures hold promise to provide a robust quantum simulation platform for strongly correlated materials and realize elusive states of matter such as topological states in the laboratory. We demonstrated that the moiré bands of twisted transition metal dichalcogenide (TMD) hetero-nanoribbons exhibit non-trivial topological order due to the tendency of valence and conduction band states in K valleys to form giant band gaps when spin-orbit coupling (SOC) is taken into account. Among the features of twisted WS[Formula: see text]/MoS[Formula: see text] and WSe[Formula: see text]/MoSe[Formula: see text], we found that the heavy fermions associated with the topological flat bands and the presence of strongly correlated states, enhance anomalous Hall conductivity (AHC) away from the magic angle. By band analysis, we showed that the topmost conduction bands from the ± K-valleys are perfectly flat and carry a spin/valley Chern number. Moreover, we showed that the non-linear anomalous Hall effect in moiré TMD hetero-nanoribbons can be used to manipulate terahertz (THz) radiation. Our findings establish twisted heterostructures of group-VI TMD nanoribbons as a tunable platform for engineering topological valley quantum phases and THz non-linear Hall conductivity.

Electronic Band Engineering of Two-Dimensional Kagomé Polymers

Two-dimensional conjugated polymers (2DCPs) are an emerging class of materials that exhibit properties similar to graphene yet do not have the limitation of zero bandgap. On-surface synthesis provides exceptional control on the polymerization reaction, allowing tailoring properties by choosing suitable monomers. Heteroatom-substituted triangulene 2DCPs constitute a playing ground for such a design and are predicted to exhibit graphene-like band structures with high charge mobility and characteristic Dirac cones in conduction or valence states. However, measuring these properties experimentally is challenging and requires long-range-ordered polymers, preferably with an epitaxial relationship with the substrate. Here, we investigate the electronic properties of a mesoscale-ordered carbonyl-bridged triphenylamine 2DCP (P2TANGO) and demonstrate the presence of a Dirac cone by combining angle-resolved photoemission spectroscopy (ARPES) with density functional theory (DFT) calculations. Moreover, we measure the absolute energy position of the Dirac cone with respect to the vacuum level. We show that the bridging functionality of the triangulene (ether vs carbonyl) does not significantly perturb the band structure but strongly affects the positioning of the bands with respect to the Au(111) states and allows control of the ionization energy of the polymer. Our results provide proof of the controllable electronic properties of 2DCPs and bring us closer to their use in practical applications.

Tuning commensurability in twisted van der Waals bilayers

Moiré superlattices based on van der Waals bilayers1-4 created at small twist angles lead to a long wavelength pattern with approximate translational symmetry. At large twist angles (θt), moiré patterns are, in general, incommensurate except for a few discrete angles. Here we show that large-angle twisted bilayers offer distinctly different platforms. More specifically, by using twisted tungsten diselenide bilayers, we create the incommensurate dodecagon quasicrystals at θt = 30° and the commensurate moiré crystals at θt = 21.8° and 38.2°. Valley-resolved scanning tunnelling spectroscopy shows disparate behaviours between moiré crystals (with translational symmetry) and quasicrystals (with broken translational symmetry). In particular, the K valley shows rich electronic structures exemplified by the formation of mini-gaps near the valence band maximum. These discoveries demonstrate that bilayers with large twist angles offer a design platform to explore moiré physics beyond those formed with small twist angles.

Twistronics of Kekulé Graphene: Honeycomb and Kagome Flat Bands

Kekulé-O order in graphene, which has recently been realized experimentally, induces Dirac electron masses on the order of m∼100  meV. We show that twisted bilayer graphene in which one or both layers have Kekulé-O order exhibits nontrivial flat electronic bands on honeycomb and kagome lattices. When only one layer has Kekulé-O order, there is a parameter regime for which the lowest four bands at charge neutrality form an isolated two-orbital honeycomb lattice model with two flat bands. The bandwidths are minimal at a magic twist angle θ≈0.7° and Dirac mass m≈100  meV. When both layers have Kekulé-O order, there is a large parameter regime around θ≈1° and m≳100  meV in which the lowest three valence and conduction bands at charge neutrality each realize isolated kagome lattice models with one flat band, while the next three valence and conduction bands are flat bands on triangular lattices. These flat band systems may provide a new platform for strongly correlated phases of matter.

Giant Correlated Gap and Possible Room-Temperature Correlated States in Twisted Bilayer MoS_{2}

Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report evidence of possible room-temperature correlated electronic states and layer-hybridized SU(4) model simulator in AB-stacked MoS_{2} homobilayer moiré superlattices. Correlated insulating states at moiré band filling factors v=1, 2, 3 are unambiguously established in twisted bilayer MoS_{2}. Remarkably, the correlated electronic state at v=1 shows a giant correlated gap of ∼126  meV and may persist up to a record-high critical temperature over 285 K. The realization of a possible room-temperature correlated state with a large correlated gap in twisted bilayer MoS_{2} can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large nonlinear Hall responses up to room temperature are uncovered near correlated electronic states, demonstrating the quantum geometry of moiré flat conduction band.

Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene

The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2-4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5-7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8-11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.

Moiré-Assisted Realization of Octahedral MoTe2 Monolayer

A current key challenge in 2D materials is the realization of emergent quantum phenomena in hetero structures via controlling the moiré potential created by the periodicity mismatch between adjacent layers, as highlighted by the discovery of superconductivity in twisted bilayer graphene. Generally, the lattice structure of the original host material remains unchanged even after the moiré superlattice is formed. However, much less attention is paid for the possibility that the moiré potential can also modify the original crystal structure itself. Here, it is demonstrated that octahedral MoTe2 which is unstable in bulk is stabilized in a commensurate MoTe2 /graphene hetero-bilayer due to the moiré potential created between the two layers. It is found that the reconstruction of electronic states via the moiré potential is responsible for this stabilization, as evidenced by the energy-gap opening at the Fermi level observed by angle-resolved photoemission and scanning tunneling spectroscopies. The present results provide a fresh approach to realize novel 2D quantum phases by utilizing the moiré potential.

Charge-4e superconductivity and chiral metal in 45°-twisted bilayer cuprates and related bilayers

The material realization of charge-4e/6e superconductivity (SC) is a big challenge. Here, we propose to realize charge-4e SC in maximally-twisted homobilayers, such as 45∘-twisted bilayer cuprates and 30∘-twisted bilayer graphene, referred to as twist-bilayer quasicrystals (TB-QC). When each monolayer hosts a pairing state with the largest pairing angular momentum, previous studies have found that the second-order interlayer Josephson coupling would drive chiral topological SC (TSC) in the TB-QC. Here we propose that, above the Tc of the chiral TSC, either charge-4e SC or chiral metal can arise as vestigial phases, depending on the ordering of the total- and relative-pairing-phase fields of the two layers. Based on a thorough symmetry analysis to get the low-energy effective Hamiltonian, we conduct a combined renormalization-group and Monte-Carlo study and obtain the phase diagram, which includes the charge-4e SC and chiral metal phases.

Gate-tunable anomalous Hall effect in Bernal tetralayer graphene

Large spin-orbit coupling is often thought to be critical in realizing magnetic order-locked charge transport such as the anomalous Hall effect (AHE). Recently, artificial stacks of two-dimensional materials, e.g., magic-angle twisted bilayer graphene on hexagonal boron-nitride heterostructures and dual-gated rhombohedral trilayer graphene, have become platforms for realizing AHE without spin-orbit coupling. However, these stacking arrangements are not energetically favorable, impeding experiments and further device engineering. Here we report an anomalous Hall effect in Bernal-stacked tetralayer graphene devices (BTG), the most stable configuration of four-layer graphene. BTG AHE is switched on by a displacement field and is most pronounced at low carrier densities. The onset of AHE occurs in tandem with a full metal to a broken isospin transition indicating an orbital origin of the itinerant ferromagnetism. At lowest densities, BTG exhibits an unconventional hysteresis with step-like anomalous Hall plateaus. Persisting to several tens of kelvin, AHE in BTG demonstrates the ubiquity and robustness of magnetic order in readily available and stable multilayer Bernal graphene stacks-a new venue for intrinsic non-reciprocal responses.

Moiré synaptic transistor with room-temperature neuromorphic functionality

Moiré quantum materials host exotic electronic phenomena through enhanced internal Coulomb interactions in twisted two-dimensional heterostructures1-4. When combined with the exceptionally high electrostatic control in atomically thin materials5-8, moiré heterostructures have the potential to enable next-generation electronic devices with unprecedented functionality. However, despite extensive exploration, moiré electronic phenomena have thus far been limited to impractically low cryogenic temperatures9-14, thus precluding real-world applications of moiré quantum materials. Here we report the experimental realization and room-temperature operation of a low-power (20 pW) moiré synaptic transistor based on an asymmetric bilayer graphene/hexagonal boron nitride moiré heterostructure. The asymmetric moiré potential gives rise to robust electronic ratchet states, which enable hysteretic, non-volatile injection of charge carriers that control the conductance of the device. The asymmetric gating in dual-gated moiré heterostructures realizes diverse biorealistic neuromorphic functionalities, such as reconfigurable synaptic responses, spatiotemporal-based tempotrons and Bienenstock-Cooper-Munro input-specific adaptation. In this manner, the moiré synaptic transistor enables efficient compute-in-memory designs and edge hardware accelerators for artificial intelligence and machine learning.

Band structure sensitive photoresponse in twisted bilayer graphene proximitized with WSe2

The ability to tune the twist angle between different layers of two-dimensional (2D) materials has enabled the creation of electronic flat bands artificially, leading to exotic quantum phases. When a twisted blilayer of graphene (tBLG) is placed at the van der Waals proximity to a semiconducting layer of transition metal dichalcogenide (TMDC), such as WSe2, the emergent phases in the tBLG can fundamentally modify the functionality of such heterostructures. Here we have performed photoresponse measurements in few-layer-WSe2/tBLG heterostructure, where the mis-orientation angle of the tBLG layer was chosen to lie close to the magic angle of 1.1°. Our experiments show that the photoresponse is extremely sensitive to the band structure of tBLG and gets strongly suppressed when the Fermi energy was placed within the low-energy moiré bands. Photoresponse could however be recovered when Fermi energy exceeded the moiré band edge where it was dominated by the photogating effect due to transfer of charge between the tBLG and the WSe2 layers. Our observations suggest the possibility of the screening effects from moiré flat bands that strongly affect the charge transfer process at the WSe2/tBLG interface, which is further supported by time-resolved photo-resistance measurements.

Energy dissipation on magic angle twisted bilayer graphene

Traditional Joule dissipation omnipresent in today's electronic devices is well understood while the energy loss of the strongly interacting electron systems remains largely unexplored. Twisted bilayer graphene (tBLG) is a host to interaction-driven correlated insulating phases, when the relative rotation is close to the magic angle (1.08∘). We report on low-temperature (5K) nanomechanical energy dissipation of tBLG measured by pendulum atomic force microscopy (p-AFM). The ultrasensitive cantilever tip acting as an oscillating gate over the quantum device shows dissipation peaks attributed to different fractional fillings of the flat energy bands. Local detection allows to determine the twist angle and spatially resolved dissipation images showed the existence of hundred-nanometer domains of different doping. Application of magnetic fields provoked strong oscillations of the dissipation signal at 3/4 band filling, identified in analogy to Aharonov-Bohm oscillations, a wavefunction interference present between domains of different doping and a signature of orbital ferromagnetism.

Magnetic semiconducting borophenes and their derivatives

Two semiconducting borophenes with layer-dependent magnetism are predicted based on spin-polarized density functional theory. Both monolayer borophenes are ferromagnetic. One is composed of B3 and B15 triangular motifs, exhibiting bipolar spin polarization and a magnetic moment of 1.00 μB per primitive cell. The other consists of B15 triangular motifs, possessing a Curie temperature of about 437 K and a magnetic moment of 3.00 μB per primitive cell. B atoms located between the triangular motifs are essential for inducing ferromagnetism in monolayer borophenes. However, bilayer borophenes with high-symmetry stacking orders are nonmagnetic. Furthermore, magnetic boron nanotubes and fullerenes could be made of monolayer borophenes. Finally, we propose to fabricate these magnetic semiconducting borophenes from the buckled triangular structure of borophenes via selective electron beam ionization of B atoms by scanning transmission electron microscopy.

Enhanced optical conductivity and many-body effects in strongly-driven photo-excited semi-metallic graphite

The excitation of quasi-particles near the extrema of the electronic band structure is a gateway to electronic phase transitions in condensed matter. In a many-body system, quasi-particle dynamics are strongly influenced by the electronic single-particle structure and have been extensively studied in the weak optical excitation regime. Yet, under strong optical excitation, where light fields coherently drive carriers, the dynamics of many-body interactions that can lead to new quantum phases remain largely unresolved. Here, we induce such a highly non-equilibrium many-body state through strong optical excitation of charge carriers near the van Hove singularity in graphite. We investigate the system's evolution into a strongly-driven photo-excited state with attosecond soft X-ray core-level spectroscopy. We find an enhancement of the optical conductivity of nearly ten times the quantum conductivity and pinpoint it to carrier excitations in flat bands. This interaction regime is robust against carrier-carrier interaction with coherent optical phonons acting as an attractive force reminiscent of superconductivity. The strongly-driven non-equilibrium state is markedly different from the single-particle structure and macroscopic conductivity and is a consequence of the non-adiabatic many-body state.

Nodal band-off-diagonal superconductivity in twisted graphene superlattices

The superconducting state and mechanism are among the least understood phenomena in twisted graphene systems. Recent tunneling experiments indicate a transition between nodal and gapped pairing with electron filling, which is not naturally understood within current theory. We demonstrate that the coexistence of superconductivity and flavor polarization leads to pairing channels that are guaranteed by symmetry to be entirely band-off-diagonal, with a variety of consequences: most notably, the pairing invariant under all symmetries can have Bogoliubov Fermi surfaces in the superconducting state with protected nodal lines, or may be fully gapped, depending on parameters, and the band-off-diagonal chiral p-wave state exhibits transitions between gapped and nodal regions upon varying the doping. We demonstrate that band-off-diagonal pairing can be the leading state when only phonons are considered, and is also uniquely favored by fluctuations of a time-reversal-symmetric intervalley coherent order motivated by recent experiments. Consequently, band-off-diagonal superconductivity allows for the reconciliation of several key experimental observations in graphene moiré systems.

Superconductivity in twisted double bilayer graphene stabilized by WSe2

Identifying the essential components of superconductivity in graphene-based systems remains a critical problem in two-dimensional materials research. This field is connected to the mysteries that underpin investigations of unconventional superconductivity in condensed-matter physics. Superconductivity has been observed in magic-angle twisted stacks of monolayer graphene but conspicuously not in twisted stacks of bilayer graphene, although both systems host topological flat bands and symmetry-broken states. Here we report the discovery of superconductivity in twisted double bilayer graphene (TDBG) in proximity to WSe2. Samples with twist angles 1.24° and 1.37° superconduct in small pockets of the gate-tuned phase diagram within the valence and conduction band, respectively. Superconductivity emerges from unpolarized phases near van Hove singularities and next to regions with broken isospin symmetry. Our results show the correlation between a high density of states and the emergence of superconductivity in TDBG while revealing a possible role for isospin fluctuations in the pairing.

Orbital multiferroicity in pentalayer rhombohedral graphene

Ferroic orders describe spontaneous polarization of spin, charge and lattice degrees of freedom in materials. Materials exhibiting multiple ferroic orders, known as multiferroics, have important parts in multifunctional electrical and magnetic device applications1-4. Two-dimensional materials with honeycomb lattices offer opportunities to engineer unconventional multiferroicity, in which the ferroic orders are driven purely by the orbital degrees of freedom and not by electron spin. These include ferro-valleytricity corresponding to the electron valley5 and ferro-orbital-magnetism6 supported by quantum geometric effects. These orbital multiferroics could offer strong valley-magnetic couplings and large responses to external fields-enabling device applications such as multiple-state memory elements and electric control of the valley and magnetic states. Here we report orbital multiferroicity in pentalayer rhombohedral graphene using low-temperature magneto-transport measurements. We observed anomalous Hall signals Rxy with an exceptionally large Hall angle (tanΘH > 0.6) and orbital magnetic hysteresis at hole doping. There are four such states with different valley polarizations and orbital magnetizations, forming a valley-magnetic quartet. By sweeping the gate electric field E, we observed a butterfly-shaped hysteresis of Rxy connecting the quartet. This hysteresis indicates a ferro-valleytronic order that couples to the composite field E · B (where B is the magnetic field), but not to the individual fields. Tuning E would switch each ferroic order independently and achieve non-volatile switching of them together. Our observations demonstrate a previously unknown type of multiferroics and point to electrically tunable ultralow-power valleytronic and magnetic devices.

Extremely Large Response of Phonon Coherence in Twisted Penta-NiN2 Bilayer

Twisting has recently been demonstrated as an effective strategy for tuning the interactions between particles or quasi-particles in layered materials. Motivated by the recent experimental synthesis of pentagonal NiN2 sheet [ACS Nano 2021, 15, 13539], for the first time, the response of phonon coherence to twisting in bilayer penta-NiN2 , going beyond the particle-like phonon transport is studied. By using the unified theory of phonon transport and high order lattice anharmonicity, together with the self-consistent phonon theory, it is found that the lattice thermal conductivity is reduced by 80.6% from 33.35 to 6.47 W m-1 K-1 at 300 K when the layers are twisted. In particular, the contribution of phonon coherence is increased sharply by an order of magnitude, from 0.21 to 2.40 W m-1 K-1 , due to the reduced differences between the phonon frequencies and enhanced anharmonicity after the introduction of twist. The work provides a fundamental understanding of the phonon interaction in twisted pentagonal sheets.

Kinetic magnetism in triangular moiré materials

Magnetic properties of materials ranging from conventional ferromagnetic metals to strongly correlated materials such as cuprates originate from Coulomb exchange interactions. The existence of alternate mechanisms for magnetism that could naturally facilitate electrical control has been discussed theoretically1-7, but an experimental demonstration8 in an extended system has been missing. Here we investigate MoSe2/WS2 van der Waals heterostructures in the vicinity of Mott insulator states of electrons forming a frustrated triangular lattice and observe direct evidence of magnetic correlations originating from a kinetic mechanism. By directly measuring electronic magnetization through the strength of the polarization-selective attractive polaron resonance9,10, we find that when the Mott state is electron-doped, the system exhibits ferromagnetic correlations in agreement with the Nagaoka mechanism.

Emerging Characteristics and Properties of Moiré Materials

In recent years, scientists have conducted extensive research on Moiré materials and have discovered some compelling properties. The Moiré superlattice allows superconductivity through flat-band and strong correlation effects. The presence of flat bands causes the Moiré material to exhibit topological properties as well. Modulating electronic interactions with magnetic fields in Moiré materials enables the fractional quantum Hall effect. In addition, Moiré materials have ferromagnetic and antiferromagnetic properties. By tuning the interlayer coupling and spin interactions of the Moiré superlattice, different magnetic properties can be achieved. Finally, this review also discusses the applications of Moiré materials in the fields of photocurrent, superconductivity, and thermoelectricity. Overall, Moiré superlattices provide a new dimension in the development of two-dimensional materials.