Edge state in graphene ribbons: Nanometer size effect and edge shape dependence

Electron-electron and spin-orbit interactions in armchair graphene ribbons

The effects of intrinsic spin-orbit and Coulomb interactions on low-energy properties of finite width graphene armchair ribbons are studied by means of a Dirac Hamiltonian. It is shown that metallic states subsist in the presence of intrinsic spin-orbit interactions as spin-filtered edge states, in contrast with the insulating behavior predicted for graphene planes. A charge-gap opens due to Coulomb interactions in neutral ribbons, that vanishes as Delta approximately 1/W, with a gapless spin sector. Weak intrinsic spin-orbit interactions do not change the insulating behavior. Explicit expressions for the width-dependent gap and various correlation functions are presented.

Magnetic and quantum confinement effects on electronic and optical properties of graphene ribbons

Through the tight-binding calculation, we demonstrate that magnetic and quantum confinements have a great influence on the low-energy band structures of one-dimensional (1D) armchair graphene ribbons. The magnetic field first changes 1D parabolic bands into the Hall-edge states which originate in the Landau wavefunctions deformed by one or two ribbon edges. The quantum confinement dominates the characteristics of the Hall-edge states only when the Landau wavefunctions touch two ribbon edges. Then, some of the Hall-edge states evolve as the Landau states when the field strength grows. The partial flat bands (Landau levels), related to the Landau states, appear. The magnetic field dramatically modifies the energy dispersions and it changes the size of the bandgap, shifts the band-edge states, destroys the degeneracy of the energy bands, induces the semiconductor-metal transition and generates the partial flat bands. The above-mentioned magneto-electronic properties are completely reflected in the low-frequency absorption spectra--the shift of peak position, the change of peak symmetry, the alteration of peak height, the generation of new peaks and the change of absorption edges. As a result, there are magnetic-field-dependent absorption frequencies. The findings show that the magnetic field could be used to modulate the electronic properties and the absorption spectra.

Quasiparticle energies and band gaps in graphene nanoribbons

We present calculations of the quasiparticle energies and band gaps of graphene nanoribbons (GNRs) carried out using a first-principles many-electron Green's function approach within the GW approximation. Because of the quasi-one-dimensional nature of a GNR, electron-electron interaction effects due to the enhanced screened Coulomb interaction and confinement geometry greatly influence the quasiparticle band gap. Compared with previous tight-binding and density functional theory studies, our calculated quasiparticle band gaps show significant self-energy corrections for both armchair and zigzag GNRs, in the range of 0.5-3.0 eV for ribbons of width 2.4-0.4 nm. The quasiparticle band gaps found here suggest that use of GNRs for electronic device components in ambient conditions may be viable.

Magnetism in graphene nanoislands

We study the magnetic properties of nanometer-sized graphene structures with triangular and hexagonal shapes terminated by zigzag edges. We discuss how the shape of the island, the imbalance in the number of atoms belonging to the two graphene sublattices, the existence of zero-energy states, and the total and local magnetic moment are intimately related. We consider electronic interactions both in a mean-field approximation of the one-orbital Hubbard model and with density functional calculations. Both descriptions yield values for the ground state total spin S consistent with Lieb's theorem for bipartite lattices. Triangles have a finite S for all sizes whereas hexagons have S=0 and develop local moments above a critical size of approximately 1.5 nm.

Transport in multiterminal graphene nanodevices

We study the transport properties of multiterminal graphene nanodevices using the Landauer-Buttiker approach and the tight binding model. We consider a four-terminal device made at the crossing of a zigzag and armchair nanoribbons and two types of T-junction devices. The transport properties of graphene multiterminal devices are highly sensitive to the details of the junction region. Thus the properties are drastically different from those on the armchair and zigzag counterparts. In the cross-junction device, we see a conductance dip in the armchair lead associated with a conductance peak in the zigzag lead. We find that this effect is enhanced in a T-junction device with one armchair sidearm.

Coulomb blockade in graphene nanoribbons

We propose that recent transport experiments revealing the existence of an energy gap in graphene nanoribbons may be understood in terms of Coulomb blockade. Electron interactions play a decisive role at the quantum dots which form due to the presence of necks arising from the roughness of the graphene edge. With the average transmission as the only fitting parameter, our theory shows good agreement with the experimental data.

Substrate-induced bandgap opening in epitaxial graphene

Graphene has shown great application potential as the host material for next-generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is the lack of an energy gap in its electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here, we show that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe that our results highlight a promising direction for bandgap engineering of graphene.

Carbon-based electronics

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

First principles study of magnetism in nanographenes

Magnetism in nanographenes [also known as polycyclic aromatic hydrocarbons (PAHs)] is studied with first principles density functional calculations. We find that an antiferromagnetic (AFM) phase appears as the PAH reaches a certain size. This AFM phase in PAHs has the same origin as the one in infinitely long zigzag-edged graphene nanoribbons, namely, from the localized electronic state at the zigzag edge. The smallest PAH still having an AFM ground state is identified. With increased length of the zigzag edge, PAHs approach an infinitely long ribbon in terms of (1) the energetic ordering and difference among the AFM, ferromagnetic, and nonmagnetic phases and (2) the average local magnetic moment at the zigzag edges. These PAHs serve as ideal targets for chemical synthesis of nanographenes that possess magnetic properties. Moreover, our calculations support the interpretation that experimentally observed magnetism in activated carbon fibers originates from the zigzag edges of the nanographenes.

Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.

Energetics and electronic structure of armchair nanotubes with topological line defects

We study the electronic structure and energetics of carbon nanotubes with topological line defects consisting of fused pentagons and octagon rings by means of first-principles calculation in density functional theory and tight-binding molecular dynamics simulations. The tubes with the topological line defects are found to exhibit magnetic ordering where polarized electron spins are localized around the topological defect and ferromagnetically aligned along the defect. Our analyses of the electronic energy band and spin density distributions reveal that this ferromagnetic spin ordering is associated with the edge states that are inherent in the graphite ribbon with zigzag edges. The tight-binding molecular dynamics simulations show that the nanotubes with the topological line defects are thermally stable up to temperature of 3000 K and disrupted over 4000 K.

Transverse field effect in graphene ribbons

It is shown that a graphene ribbon, a ballistic strip of carbon monolayer, may serve as a quantum wire whose electronic properties can be continuously and reversibly controlled by an externally applied transverse voltage. The electron bands of armchair-edge ribbons undergo dramatic transformations: The Fermi surface fractures, Fermi velocity and effective mass change sign, and excitation gaps are reduced by the transverse field. These effects are manifest in the conductance plateaus, van Hove singularities, thermopower, and activated transport. The control over one-dimensional bands may help enhance effects of electron correlations, and be utilized in device applications.

Enhanced half-metallicity in edge-oxidized zigzag graphene nanoribbons

We present a comprehensive theoretical study of the electronic properties and relative stabilities of edge-oxidized zigzag graphene nanoribbons. The oxidation schemes considered include hydroxyl, lactone, ketone, and ether groups. Using screened exchange density functional theory, we show that these oxidized ribbons are more stable than hydrogen-terminated nanoribbons except for the case of the etheric groups. The stable oxidized configurations maintain a spin-polarized ground state with antiferromagnetic ordering localized at the edges, similar to the fully hydrogenated counterparts. More important, edge oxidation is found to lower the onset electric field required to induce half-metallic behavior and extend the overall field range at which the systems remain half-metallic. Once the half-metallic state is reached, further increase of the external electric field intensity produces a rapid decrease in the spin magnetization up to a point where the magnetization is quenched completely. Finally, we find that oxygen-containing edge groups have a minor effect on the energy difference between the antiferromagnetic ground state and the above-lying ferromagnetic state.

Electronic bisection of a single-wall carbon nanotube by controlled chemisorption

Conversion of two diametrically opposed atomic rows on a carbon nanotube to sp(3) hybridization produces two identical weakly coupled one-dimensional electronic systems within a single robust covalently bonded package: a biribbon. Arm-chair tubes, when so divided, acquire a pair of narrow spin-polarized bands at the Fermi energy; interaction across the sp(3) dividers produces a tunable band splitting in the THz range. For semiconducting tubes, the eigenvalues of the low-energy electronic states are surprisingly unaffected by the bifurcation; however, the tubes' response functions to external electric fields are dramatically altered. These modified tubes could be produced by uniaxial compression transverse to the tube axis followed by site-selective chemisorption.

Gate electrostatics and quantum capacitance of graphene nanoribbons

Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly nonuniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C-V characteristics.

Unique chemical reactivity of a graphene nanoribbon's zigzag edge

The zigzag edge of a graphene nanoribbon possesses a unique electronic state that is near the Fermi level and localized at the edge carbon atoms. The authors investigate the chemical reactivity of these zigzag edge sites by examining their reaction energetics with common radicals from first principles. A "partial radical" concept for the edge carbon atoms is introduced to characterize their chemical reactivity, and the validity of this concept is verified by comparing the dissociation energies of edge-radical bonds with similar bonds in molecules. In addition, the uniqueness of the zigzag-edged graphene nanoribbon is further demonstrated by comparing it with other forms of sp2 carbons, including a graphene sheet, nanotubes, and an armchair-edged graphene nanoribbon.

Atomic structure of graphene on SiO2

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.

Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.

Energy band-gap engineering of graphene nanoribbons

We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.

The rise of graphene

Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

Hidden one-electron interactions in carbon nanotubes revealed in graphene nanostrips

Many single-wall carbon nanotube (SWNT) properties near the Fermi level were successfully predicted using a nearest-neighbor tight-binding model characterized by a single parameter, V1. We show however that this model fails for armchair-edge graphene nanostrips due to interactions directly across hexagons. These same interactions are found largely hidden in the description of SWNTs, where they renormalize V1 leaving previous nearest-neighbor model SWNT results largely intact while resolving a long-standing puzzle regarding the magnitude of V1.

Molecular vibrations of [n]oligoacenes (n=2−5 and 10) and phonon dispersion relations of polyacene

As model compounds for nanosize carbon clusters, the phonon dispersion curves of polyacene are constructed based on density functional theory calculations for [n]oligoacenes (n=2-5, 10, and 15). Complete vibrational assignments are given for the observed Fourier-transform infrared and Raman spectra of [n]oligoacenes (n=2-5). Raman intensity distributions by the 1064-nm excitation are well reproduced by the polarizability-approximation calculations for naphthalene and anthracene, whereas several bands of naphthacene and pentacene at 1700-1100 cm(-1) are calculated to be enhanced by the resonance Raman effect. It is found from vibronic calculations that the coupled a(g) modes between the Kekulé deformation and joint CC stretching give rise to the Raman enhancements of the Franck-Condon type, and that the b(3g) mode corresponding to the graphite G mode is enhanced by vibronic coupling between the (1)L(a)((1)B(1u)) and (1)B(b)((1)B(2u)) states. The phonon dispersion curves of polyacene provide a uniform foundation for understanding molecular vibrations of the oligoacenes in terms of the phase difference. The mode correlated with the defect-sensitive D mode of the bulk carbon networks is also found for the present one-dimensional system.

Ballistic transport in graphene nanostrips in the presence of disorder: importance of edge effects

Stimulated by recent advances in isolating graphene and similarities to single-wall carbon nanotubes, simulations were performed to assess the effects of static disorder on the conductance of metallic armchair- and zigzag-edge graphene nanostrips. Both strip types were found to have outstanding ballistic transport properties in the presence of a substrate-induced disorder. However, only the zigzag-edge strips retain these properties in the presence of irregular edges, making them better initial synthetic targets for ballistic device applications.

Studying disorder in graphite-based systems by Raman spectroscopy

Raman spectroscopy has historically played an important role in the structural characterization of graphitic materials, in particular providing valuable information about defects, stacking of the graphene layers and the finite sizes of the crystallites parallel and perpendicular to the hexagonal axis. Here we review the defect-induced Raman spectra of graphitic materials from both experimental and theoretical standpoints and we present recent Raman results on nanographites and graphenes. The disorder-induced D and D' Raman features, as well as the G'-band (the overtone of the D-band which is always observed in defect-free samples), are discussed in terms of the double-resonance (DR) Raman process, involving phonons within the interior of the 1st Brillouin zone of graphite and defects. In this review, experimental results for the D, D' and G' bands obtained with different laser lines, and in samples with different crystallite sizes and different types of defects are presented and discussed. We also present recent advances that made possible the development of Raman scattering as a tool for very accurate structural analysis of nano-graphite, with the establishment of an empirical formula for the in- and out-of-plane crystalline size and even fancier Raman-based information, such as for the atomic structure at graphite edges, and the identification of single versus multi-graphene layers. Once established, this knowledge provides a powerful machinery to understand newer forms of sp(2) carbon materials, such as the recently developed pitch-based graphitic foams. Results for the calculated Raman intensity of the disorder-induced D-band in graphitic materials as a function of both the excitation laser energy (E(laser)) and the in-plane size (L(a)) of nano-graphites are presented and compared with experimental results. The status of this research area is assessed, and opportunities for future work are identified.

Electronic structure and stability of semiconducting graphene nanoribbons

We present a systematic density functional theory study of the electronic properties, optical spectra, and relative thermodynamic stability of semiconducting graphene nanoribbons. We consider ribbons with different edge nature including bare and hydrogen-terminated ribbons, several crystallographic orientations, and widths up to 3 nm. Our results can be extrapolated to wider ribbons providing a qualitative way of determining the electronic properties of ribbons with widths of practical significance. We predict that in order to produce materials with band gaps similar to Ge or InN, the width of the ribbons must be between 2 and 3 nm. If larger bang gap ribbons are needed (like Si, InP, or GaAs), their width must be reduced to 1-2 nm. According to the extrapolated inverse power law obtained in this work, armchair carbon nanoribbons of widths larger than 8 nm will present a maximum band gap of 0.3 eV, while for ribbons with a width of 80 nm the maximum possible band gap is 0.05 eV. For chiral nanoribbons the band gap oscillations rapidly vanish as a function of the chiral angle indicating that a careful design of their crystallographic nature is an essential ingredient for controlling their electronic properties. Optical excitations show important differences between ribbons with and without hydrogen termination and are found to be sensitive to the carbon nanoribbon width. This should provide a practical way of revealing information on their size and the nature of their edges.

Energy gaps in graphene nanoribbons

Based on a first-principles approach, we present scaling rules for the band gaps of graphene nanoribbons (GNRs) as a function of their widths. The GNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen passivation. Both varieties of ribbons are shown to have band gaps. This differs from the results of simple tight-binding calculations or solutions of the Dirac's equation based on them. Our ab initio calculations show that the origin of energy gaps for GNRs with armchair shaped edges arises from both quantum confinement and the crucial effect of the edges. For GNRs with zigzag shaped edges, gaps appear because of a staggered sublattice potential on the hexagonal lattice due to edge magnetization. The rich gap structure for ribbons with armchair shaped edges is further obtained analytically including edge effects. These results reproduce our ab initio calculation results very well.

Half-metallic graphene nanoribbons

Electrical current can be completely spin polarized in a class of materials known as half-metals, as a result of the coexistence of metallic nature for electrons with one spin orientation and insulating nature for electrons with the other. Such asymmetric electronic states for the different spins have been predicted for some ferromagnetic metals--for example, the Heusler compounds--and were first observed in a manganese perovskite. In view of the potential for use of this property in realizing spin-based electronics, substantial efforts have been made to search for half-metallic materials. However, organic materials have hardly been investigated in this context even though carbon-based nanostructures hold significant promise for future electronic devices. Here we predict half-metallicity in nanometre-scale graphene ribbons by using first-principles calculations. We show that this phenomenon is realizable if in-plane homogeneous electric fields are applied across the zigzag-shaped edges of the graphene nanoribbons, and that their magnetic properties can be controlled by the external electric fields. The results are not only of scientific interest in the interplay between electric fields and electronic spin degree of freedom in solids but may also open a new path to explore spintronics at the nanometre scale, based on graphene.

Raman spectrum of graphene and graphene layers

Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality. We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers. The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process. The G peak slightly down-shifts. This allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.

How Do Aryl Groups Attach to a Graphene Sheet?

How aryl groups attach to a graphene sheet is an experimentally unanswered question. Using first principles density functional theory methods, we shed light on this problem. For the basal plane, isolated phenyl groups are predicted to be weakly bonded to the graphene sheet, even though a new single C-C bond is formed between the phenyl group and the basal plane by converting a sp2-carbon in the graphene sheet to sp3. However, the interaction can be strengthened significantly with two phenyl groups attached to the para positions of the same six-membered ring to form a pair on the basal plane. The strongest bonding is found at the graphene edges. A 1,2-addition pair is predicted to be most stable for the armchair edge, whereas the zigzag edge possesses a unique localized state near the Fermi level that shows a high affinity for the phenyl group.

Low-energy electronic properties of the AB-stacked few-layer graphites

In the presence of a perpendicular electric field, the low-energy electronic properties of the AB-stacked N-layer graphites with layer number N = 2, 3, and 4, respectively, are examined through the tight-binding model. The interlayer interactions, the number of layers, and the field strength are closely related to them. The interlayer interactions can significantly change the energy dispersions and produce new band-edge states. Bi-layer and four-layer graphites are two-dimensional semimetals due to a tiny overlap between the valence and conduction bands, while tri-layer graphite is a narrow-gap semiconductor. The electric field affects the low-energy electronic properties: the production of oscillating bands, the cause of subband (anti)crossing, the change in subband spacing, and the increase in band-edge states. Most importantly, the aforementioned effects are revealed completely in the density of states, e.g. the generation of special structures, the shift in peak position, the change in peak height, and the alteration of the band gap.

From Armchair to Zigzag Peripheries in Nanographenes

Synthetic concepts toward the synthesis of large, not-fully benzenoid polycyclic aromatic hydrocarbons (PAHs), decorated with phase-forming and solubilizing n-dodecyl chains, are presented based on the intramolecular cyclodehydrogenation reaction of suitable oligophenylene precursors. The formal addition of successive C2 units into the armchair bays of the parent hexa-peri-hexabenzocoronene extends the aromatic system and leads to PAHs with a partial zigzag periphery. This variation of the nature of the periphery, symmetry, size, and shape has a distinct impact upon the electronic properties and the organization into columnar superstructures. Both computational and experimental UV/vis spectra, which are in good agreement, emphasize the dependence of the characteristic bands alpha, p, and beta upon the overall size and symmetry of the PAHs. While the number and the substitution patterns of attached n-dodecyl chains do not influence the electronic properties, the thermal behavior and supramolecular organization are strongly influenced, which has been elucidated with differential scanning calorimetry (DSC) and 2D wide-angle X-ray diffractometry (2D-WAXS) on mechanically aligned samples. This study provides valuable insight into the future design of semiconducting materials based on extended PAHs.

Electronic Confinement and Coherence in Patterned Epitaxial Graphene

Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.

Effect of the Tube Diameter Distribution on the High-Temperature Structural Modification of Bundled Single-Walled Carbon Nanotubes

We present results of a systematic high-resolution transmission electron microscopy study of the thermal evolution of bundled single-walled carbon nanotubes (SWNTs) subjected to approximately 4-h high-temperature heat treatment (HTT) in a vacuum at successively higher temperatures up to 2200 degrees C. We have examined purified SWNT material derived from the HiPCO and ARC processes. These samples were found to thermally evolve along very different pathways that we propose depend on three factors: (1) initial diameter distribution, (2) concomitant tightness of the packing of the tubes in a bundle, and (3) the bundle size. Graphitic nanoribbons (GNR) were found to be the dominant high-temperature filament in ARC material after HTT = 2000 degrees C; they were not observed in any heat-treated HiPCO material. The first two major steps in the thermal evolution of HiPCO and ARC material agree with the literature, i.e., coalescence followed by the formation of multiwall carbon nanotubes (MWNTs). However, ARC material evolves to bundled MWNTs, while HiPCO evolves to isolated MWNTs. In ARC material, we find that the MWNTs collapse into multishell GNRs. The thermal evolution of these carbon systems is discussed in terms of the diameter distribution, nanotube coalescence pathways, C-C bond rearrangement, diffusion of carbon and subsequent island formation, as well as the nanotube collapse driven by van der Waals forces.

Thermal conversion of bundled carbon nanotubes into graphitic ribbons

High temperature heat treatment (HTT) of bundled single-walled carbon nanotubes (SWNTs) in vacuum ( approximately 10(-5) Torr) has been found to lead to the formation of two types of graphitic nanoribbons (GNRs), as observed by high-resolution transmission electron microscopy. Purified SWNT bundles were first found to follow two evolutionary steps, as reported previously, that is, tube coalescence (HTT approximately 1400 degrees C) and then massive bond rearrangement (HTT approximately 1600 degrees C), leading to the formation of bundled multiwall nanotubes (MWNTs) with 3-12 shells. At HTT > 1800 degrees C, we find that these MWNTs collapse into multishell GNRs. The first type of GNR we observed is driven by the collapse of diameter-doubled single-wall nanotubes, and their production is terminated at HTT approximately 1600 degrees C when the MWNTs also start to form. We propose that the collapse is driven by van der Waals forces between adjacent tubes in the same bundle. For HTT > 2000 degrees C, the heat-treated material is found to be almost completely in the multishell GNR form.

Vibronic Interactions and Possible Electron Pairing in the Photoinduced Excited Electronic States in Molecular Systems: A Theoretical Study

Electron-phonon interactions in the photoinduced excited electronic states in molecular systems such as phenanthrene-edge-type hydrocarbons are discussed and compared with those in the monoanions and cations. The complete phase patterns difference between the highest occupied molecular orbitals (HOMO) and the lowest unoccupied molecular orbitals (LUMO) (the atomic orbitals between two neighboring carbon atoms combined in phase (out of phase) in the HOMO are combined out of phase (in phase) in the LUMO) are the main reason that the C-C stretching modes around 1500 cm(-1) afford much larger electron-phonon coupling constants in the excited electronic states than in the charged electronic states. The frequencies of the vibrational modes that play an essential role in the electron-phonon interactions for the excited electronic states are similar to those for the monoanions and cations in phenanthrene-edge-type hydrocarbons. Possible electron pairing and Bose-Einstein condensation in the photoinduced excited electronic states as well as those in the monoanions and cations in molecular systems such as phenanthrene-edge-type hydrocarbons are also discussed.

Electric field modulation of galvanomagnetic properties of mesoscopic graphite

Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magnetoresistance and Hall resistance as a function of the gate voltage is observed as the sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov-de Haas oscillations. The effective mass of electron and hole carriers has been measured from the temperature dependent behavior of these oscillations.

On the Chemical Nature of Graphene Edges: Origin of Stability and Potential for Magnetism in Carbon Materials

Heretofore disconnected experimental observations are combined with a theoretical study to develop a model of the chemical composition of the edges of graphene sheets in both flat and curved sp(2)-hybridized carbon materials. It is proposed that under ambient conditions a significant fraction of the oxygen-free edge sites are neither H-terminated nor unadulterated sigma free radicals, as universally assumed. The zigzag sites are carbene-like, with the triplet ground state being most common. The armchair sites are carbyne-like, with the singlet ground state being most common. This proposal is not only consistent with the key electronic properties and surface (re)activity behavior of carbons, but it can also explain the recently documented and heretofore puzzling ferromagnetic properties of some impurity-free carbon materials.