101
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Zhou R, Wu J, Chen Y, Xie L. Polymorph Structures, Rich Physical Properties and Potential Applications of
Two‐Dimensional MoTe
2
,
WTe
2
and Its Alloys. CHINESE J CHEM 2022. [DOI: 10.1002/cjoc.202100777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Rui Zhou
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences Beijing 100190 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
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102
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Niu R, Zhu WK. Materials and possible mechanisms of extremely large magnetoresistance: a review. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:113001. [PMID: 34794134 DOI: 10.1088/1361-648x/ac3b24] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2021] [Accepted: 11/18/2021] [Indexed: 06/13/2023]
Abstract
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as -90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnetic scattering and thus resistance. In recent years, some new systems have shown an extremely large unsaturated MR (XMR). Unlike ordinary metals, the positive MR of these systems can reach 103%-108% and is persistent under super high magnetic fields. The XMR materials are mainly metals or semimetals, distributed in high-mobility topological or non-topological systems, and some are magnetic, which suggests a wide range of application scenarios. Various mechanisms have been proposed for the potential physical origin of XMR, including electron-hole compensation, steep band, ultrahigh mobility, high residual resistance ratio, topological fermions, etc. It turns out that some mechanisms play a leading role in certain systems, while more are far from clearly defined. In addition, the researches on XMR are largely overlapped or closely correlated with other recently rising physics and materials researches, such as topological matters and two-dimensional (2D) materials, which makes elucidating the mechanism of XMR even more important. Moreover, the disclosed novel properties will lay a broad and solid foundation for the design and development of functional devices. In this review, we will discuss several aspects in the following order: (I) introduction, (II) XMR materials and classification, (III) proposed mechanisms for XMR, (IV) correlation with other systems (featured), and (V) conclusions and outlook.
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Affiliation(s)
- Rui Niu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W K Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
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103
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Zhou Z, Deng J, Zhang X, Chen J, Liu J, Wang Z. Theoretical design of SnS 2-graphene heterojunctions with vacancy and impurity defects for multi-purpose photoelectric devices. Phys Chem Chem Phys 2021; 24:966-974. [PMID: 34914818 DOI: 10.1039/d1cp04552k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
SnS2 with atomic thickness has attracted extensive attention in the field of photocatalysis due to its special physicochemical properties, suitable band gap, low cost and low environmental toxicity. However, the application of SnS2 in the field of optoelectronics is restricted by its low photocatalytic efficiency and carrier mobility. In this study, vacancies and transition metal atoms are introduced into a SnS2 monolayer to modulate its physicochemical properties. Meanwhile, the SnS2 monolayer modified by vacancies and transition metal atoms is combined with graphene to form a heterostructure, which promotes the separation of photogenerated electron-hole pairs. The results of theoretical calculations show that the SnS2/graphene heterojunction can promote the separation of photogenerated carriers in intrinsic monolayer SnS2, and improve the photocatalytic efficiency and carrier mobility. The modification of Sn vacancies and Fe, Co atoms not only expands the visible light response range of the SnS2/graphene heterojunction, but also introduces magnetism, which is expected to be applied in spin optoelectronic materials. In this work, defects, doping and heterojunction assembly are rationally integrated, which provides a new idea for the design and development of spin optoelectronic devices based on monolayer SnS2.
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Affiliation(s)
- Zhonghao Zhou
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China.
| | - Jianjun Deng
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China.
| | - Xingchen Zhang
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China.
| | - Jinglong Chen
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China.
| | - Jia Liu
- No. 24 Research Institute, China Electronics Technology Group Corporation, Chongqing 401332, China
| | - Zhiyong Wang
- Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China.
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104
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Pimenta MA, Resende GC, Ribeiro HB, Carvalho BR. Polarized Raman spectroscopy in low-symmetry 2D materials: angle-resolved experiments and complex number tensor elements. Phys Chem Chem Phys 2021; 23:27103-27123. [PMID: 34859800 DOI: 10.1039/d1cp03626b] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
In this perspective review, we discuss the power of polarized Raman spectroscopy to study optically anisotropic 2D materials, belonging to the orthorhombic, monoclinic and triclinic crystal families. We start by showing that the polarization dependence of the peak intensities is described by the Raman tensor that is unique for each phonon mode, and then we discuss how to determine the tensor elements from the angle-resolved polarized measurements by analyzing the intensities in both the parallel- and cross-polarized scattering configurations. We present specific examples of orthorhombic black phosphorus and monoclinic 1T'-MoTe2, where the Raman tensors have null elements and their principal axes coincide with the crystallographic ones, followed by a discussion on the results for triclinic ReS2 and ReSe2, where the axes of the Raman tensor do not coincide with the crystallographic axes and all elements are non-zero. We show that the Raman tensor elements are, in general, given by complex numbers and that phase differences between tensor elements are needed to describe the experimental results. We discuss the dependence of the Raman tensors on the excitation laser energy and thickness of the sample within the framework of the quantum model for the Raman intensities. We show that the wavevector dependence of the electron-phonon interaction is essential for explaining the distinct Raman tensor for each phonon mode. Finally, we close with our concluding remarks and perspectives to be explored using angle-resolved polarized Raman spectroscopy in optically anisotropic 2D materials.
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Affiliation(s)
- Marcos A Pimenta
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil.
| | - Geovani C Resende
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil.
| | - Henrique B Ribeiro
- Department of Applied Physics, Stanford University, Stanford, California, 94305, USA
| | - Bruno R Carvalho
- Departamento de Física, Universidade Federal do Rio Grande do Norte, Natal, Rio Grande do Norte 59078-970, Brazil.
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105
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Yang J, Song ZY, Guo L, Gao H, Dong Z, Yu Q, Zheng RK, Kang TT, Zhang K. Nontrivial Giant Linear Magnetoresistance in Nodal-Line Semimetal ZrGeSe 2D Layers. NANO LETTERS 2021; 21:10139-10145. [PMID: 34543026 DOI: 10.1021/acs.nanolett.1c01647] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Linear magnetoresistance (LMR) is usually observed in topological quantum materials and plausibly connected with the topologically nontrivial surface state with Dirac-cone-like linear dispersion because the frequently encountered large Hall resistivity can be trivially mixed into the LMR via charge inhomogeneity. Herein, by applying an optimal gate voltage to nodal-line semimetal ZrGeSe two-dimensional (2D) layers with specific thicknesses, we observe a giant nonsaturated LMR of 8 × 104% at 2 K and a magnetic field of 9 T. This giant LMR is accompanied by a very small Hall resistivity, which is inconsistent with the charge inhomogeneity mechanism. Our systematic results confirm that the giant LMR is maximized when the topological semimetal is in the "even-metal" regime and suppressed upon evolution to the normal "odd-metal" regime. The "even-to-odd" transition is universal regardless of the thicknesses of the crystals. A comparison with Abrikosov's quantum LMR theory indicates that the observed LMR cannot be trivial.
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Affiliation(s)
- Jie Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Zhi-Yong Song
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Lei Guo
- School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Heng Gao
- International Centre for Quantum and Molecular Structures, Department of Physics, Shanghai University, Shanghai 200444, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Zhuo Dong
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Ren-Kui Zheng
- School of Materials Science and Engineering, Nanchang University, Nanchang 330031, People's Republic of China
| | - Ting-Ting Kang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
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106
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Jin M, Yu P, Fan C, Li Q, Kong P, Shen Z, Qin X, Chi Z, Jin C, Liu G, Zhong G, Xu G, Liu Z, Zhu J. Discovery of Dome-Shaped Superconducting Phase and Anisotropic Transport in a van der Waals Layered Candidate NbIrTe 4 under Pressure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2103250. [PMID: 34723437 PMCID: PMC8693038 DOI: 10.1002/advs.202103250] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Revised: 08/26/2021] [Indexed: 06/13/2023]
Abstract
The unique electronic structure and crystal structure driven by external pressure in transition metal tellurides (TMTs) can host unconventional quantum states. Here, the discovery of pressure-induced phase transition at ≈2 GPa, and dome-shaped superconducting phase emerged in van der Waals layered NbIrTe4 is reported. The highest critical temperature (Tc ) is ≈5.8 K at pressure of ≈16 GPa, where the interlayered Te-Te covalent bonds form simultaneously derived from the synchrotron diffraction data, indicating the hosting structure of superconducting evolved from low-pressure two-dimensional (2D) phase to three-dimensional (3D) structure with pressure higher than 30 GPa. Strikingly, the authors have found an anisotropic transport in the vicinity of the superconducting state, suggesting the emergence of a "stripe"-like phase. The dome-shaped superconducting phase and anisotropic transport are possibly due to the spatial modulation of interlayer Josephson coupling .
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Affiliation(s)
- Meiling Jin
- Department of Physics and Shenzhen Engineering Research Center for Frontier Materials Synthesis at High PressuresSouthern University of Science and Technology (SUSTech)Shenzhen518055China
- Center for High Pressure Science and Technology Advanced Research (HPSTAR)Beijing100094China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of Materials Science and EngineeringSun Yat‐sen UniversityGuangzhou510275China
| | - Changzeng Fan
- State Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066004China
| | - Qiang Li
- Department of PhysicsShanghai Normal UniversityShanghai200234China
| | - Panlong Kong
- Center for High Pressure Science and Technology Advanced Research (HPSTAR)Beijing100094China
| | - Zhiwei Shen
- State Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066004China
| | - Xiaomei Qin
- Department of PhysicsShanghai Normal UniversityShanghai200234China
| | - Zhenhua Chi
- Institute of High Pressure PhysicsSchool of Physical Science and TechnologyNingbo UniversityNingbo315211China
| | - Changqing Jin
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesSchool of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100190China
| | - Guangtong Liu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesSchool of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100190China
| | - Guyue Zhong
- Wuhan National High Magnetic Field Center and School of PhysicsHuazhong University of Science and TechnologyWuhan430074China
| | - Gang Xu
- Wuhan National High Magnetic Field Center and School of PhysicsHuazhong University of Science and TechnologyWuhan430074China
| | - Zheng Liu
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang AvenueSingapore639798Singapore
- School of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
| | - Jinlong Zhu
- Department of Physics and Shenzhen Engineering Research Center for Frontier Materials Synthesis at High PressuresSouthern University of Science and Technology (SUSTech)Shenzhen518055China
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107
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Zhang H, Zhu XY, Xu Y, Gawryluk DJ, Xie W, Ju SL, Shi M, Shiroka T, Zhan QF, Pomjakushina E, Shang T. Giant magnetoresistance and topological Hall effect in the EuGa 4antiferromagnet. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:034005. [PMID: 34666329 DOI: 10.1088/1361-648x/ac3102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Accepted: 10/19/2021] [Indexed: 06/13/2023]
Abstract
We report on systematic temperature- and magnetic field-dependent studies of the EuGa4binary compound, which crystallizes in a centrosymmetric tetragonal BaAl4-type structure with space groupI4/mmm. The electronic properties of EuGa4single crystals, with an antiferromagnetic (AFM) transition atTN∼ 16.4 K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching∼7×104% at 2 K in a magnetic field of 9 T. In the AFM state, EuGa4undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. BelowTN, in the ∼4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl4-type structure, to which EuGa4and EuAl4belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.
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Affiliation(s)
- H Zhang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - X Y Zhu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Y Xu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - D J Gawryluk
- Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - W Xie
- DESY, Notkestraβe 85, D-22607 Hamburg, Germany
| | - S L Ju
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Shi
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - T Shiroka
- Laboratory for Muon-Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
- Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zurich, Switzerland
| | - Q F Zhan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | | | - T Shang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
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108
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Hao X, Guo Z, Li H, Gong Y, Chen D. Anomalous enhancement of atomic vibration induced by electronic transition in 2H-MoTe 2under compression. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:025402. [PMID: 34584018 DOI: 10.1088/1361-648x/ac2ad1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Accepted: 09/28/2021] [Indexed: 06/13/2023]
Abstract
In this work, we explore the atomic vibration and local structure in 2H-MoTe2by using high-pressure x-ray absorption fine structure spectroscopy up to ∼20 GPa. The discrepancy between the Mo-Te and Mo-Mo bond length in 2H-MoTe2obtained from extended-XAFS and other techniques shows abnormal increase at 7.3 and 14.8 GPa, which is mainly due to the abrupt enhancement of vibration perpendicular to the bond direction.Ab initiocalculations are performed to study the electronic structure of 2H-MoTe2up to 20 GPa and confirm a semiconductor to semimetal transition around 8 GPa and a Lifshitz transition around 14 GPa. We attribute the anomalous enhancement of vibration perpendicular to the bond direction to electronic transitions. We find the electronic transition induced enhancement of local vibration for the first time. Our finding offers a novel insight into the local atomic vibration and provides a new platform for understanding the relationship between the electronic transition and atomic vibration.
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Affiliation(s)
- Xingyu Hao
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhiying Guo
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Haijing Li
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yu Gong
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Dongliang Chen
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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109
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MoTe 2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation. NANOMATERIALS 2021; 11:nano11112805. [PMID: 34835570 PMCID: PMC8620056 DOI: 10.3390/nano11112805] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2021] [Revised: 10/18/2021] [Accepted: 10/20/2021] [Indexed: 11/17/2022]
Abstract
Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe2). The formation of ohmic contacts increases the charge carrier mobility of MoTe2 field-effect transistor devices to 16.1 cm2 V−1s−1 with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.
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110
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Adhikari R, Adhikari S, Faina B, Terschanski M, Bork S, Leimhofer C, Cinchetti M, Bonanni A. Positive Magnetoresistance and Chiral Anomaly in Exfoliated Type-II Weyl Semimetal Td-WTe 2. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2755. [PMID: 34685198 PMCID: PMC8541530 DOI: 10.3390/nano11102755] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/24/2021] [Revised: 10/06/2021] [Accepted: 10/10/2021] [Indexed: 11/17/2022]
Abstract
Layered van der Waals semimetallic Td-WTe2, exhibiting intriguing properties which include non-saturating extreme positive magnetoresistance (MR) and tunable chiral anomaly, has emerged as a model topological type-II Weyl semimetal system. Here, ∼45 nm thick mechanically exfoliated flakes of Td-WTe2 are studied via atomic force microscopy, Raman spectroscopy, low-T/high-μ0H magnetotransport measurements and optical reflectivity. The contribution of anisotropy of the Fermi liquid state to the origin of the large positive transverse MR⊥ and the signature of chiral anomaly of the type-II Weyl Fermions are reported. The samples are found to be stable in air and no oxidation or degradation of the electronic properties is observed. A transverse MR⊥∼1200 % and an average carrier mobility of 5000 cm2V-1s-1 at T=5K for an applied perpendicular field μ0H⊥=7T are established. The system follows a Fermi liquid model for T≤50K and the anisotropy of the Fermi surface is concluded to be at the origin of the observed positive MR. Optical reflectivity measurements confirm the anisotropy of the electronic behaviour. The relative orientation of the crystal axes and of the applied electric and magnetic fields is proven to determine the observed chiral anomaly in the in-plane magnetotransport. The observed chiral anomaly in the WTe2 flakes is found to persist up to T=120K, a temperature at least four times higher than the ones reported to date.
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Affiliation(s)
- Rajdeep Adhikari
- Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria; (S.A.); (B.F.)
| | - Soma Adhikari
- Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria; (S.A.); (B.F.)
| | - Bogdan Faina
- Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria; (S.A.); (B.F.)
| | - Marc Terschanski
- Department of Physics, TU Dortmund, Otto-Hahn-Straße 4, 44227 Dortmund, Germany; (M.T.); (S.B.); (M.C.)
| | - Sophie Bork
- Department of Physics, TU Dortmund, Otto-Hahn-Straße 4, 44227 Dortmund, Germany; (M.T.); (S.B.); (M.C.)
| | - Claudia Leimhofer
- Institut für Polymerwissenschaften, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria;
| | - Mirko Cinchetti
- Department of Physics, TU Dortmund, Otto-Hahn-Straße 4, 44227 Dortmund, Germany; (M.T.); (S.B.); (M.C.)
| | - Alberta Bonanni
- Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria; (S.A.); (B.F.)
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111
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Saqib H, Rahman S, Zhao Y, Cazorla C, Errandonea D, Susilo R, Zhuang Y, Huang Y, Chen B, Dai N. Evolution of Structural and Electronic Properties of TiSe 2 under High Pressure. J Phys Chem Lett 2021; 12:9859-9867. [PMID: 34606285 DOI: 10.1021/acs.jpclett.1c02492] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A pressure-induced structural phase transition and its intimate link with the superconducting transition was studied for the first time in TiSe2 up to 40 GPa at room temperature using X-ray diffraction, transport measurement, and first-principles calculations. We demonstrate the occurrence of a first-order structural phase transition at 4 GPa from the standard trigonal structure (S.G.P3̅m1) to another trigonal structure (S-G-P3̅c1). Additionally, at 16 GPa, the P3̅c1 phase spontaneously transforms into a monoclinic C2/m phase, and above 24 GPa, the C2/m phase returns to the initial P3̅m1 phase. Electrical transport results show that metallization occurs above 6 GPa. The charge density wave observed at ambient pressure is suppressed upon compression up to 2 GPa with the emergence of superconductivity at 2.5 GPa, with a critical temperature (Tc) of 2 K. A structural transition accompanies the emergence of superconductivity that persists up to 4 GPa. The results demonstrate that the pressure-induced phase transitions explored by the experiments along with the theoretical predictions may open the door to a new path for searching and controlling the phase diagrams of transition metal dichalcogenides.
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Affiliation(s)
- H Saqib
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 201800, China
| | - S Rahman
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, UCAS, Hangzhou 310024, China
| | - Yongsheng Zhao
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - C Cazorla
- Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, Barcelona 08034, Spain
| | - D Errandonea
- Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, Valencia 46100, Spain
| | - Resta Susilo
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Yukai Zhuang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Yanwei Huang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Ning Dai
- Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 201800, China
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, UCAS, Hangzhou 310024, China
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Niu K, Weng M, Li S, Guo Z, Wang G, Han M, Pan F, Lin J. Direct Visualization of Large-Scale Intrinsic Atomic Lattice Structure and Its Collective Anisotropy in Air-Sensitive Monolayer 1T'- WTe 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2101563. [PMID: 34467674 PMCID: PMC8529427 DOI: 10.1002/advs.202101563] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Revised: 07/22/2021] [Indexed: 06/13/2023]
Abstract
Probing large-scale intrinsic structure of air-sensitive 2D materials with atomic resolution is so far challenging due to their rapid oxidization and contamination. Here, by keeping the whole experiment including growth, transfer, and characterizations in an interconnected atmosphere-control environment, the large-scale intact lattice structure of air-sensitive monolayer 1T'-WTe2 is directly visualized by atom-resolved scanning transmission electron microscopy. Benefit from the large-scale atomic mapping, collective lattice distortions are further unveiled due to the presence of anisotropic rippling, which propagates perpendicular to only one of the preferential lattice planes in the same WTe2 monolayer. Such anisotropic lattice rippling modulates the intrinsic point defect (Te vacancy) distribution, in which they aggregate at the constrictive inner side of the undulating structure, presumably due to the ripple-induced asymmetric strain as elaborated by density functional theory. The results pave the way for atomic characterizations and defect engineering of air-sensitive 2D layered materials.
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Affiliation(s)
- Kangdi Niu
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and DevicesSouthern University of Science and TechnologyShenzhen518055China
| | - Mouyi Weng
- School of Advanced MaterialsPeking UniversityShenzhen Graduate SchoolShenzhen518055China
| | - Songge Li
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Zenglong Guo
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Gang Wang
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Mengjiao Han
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and DevicesSouthern University of Science and TechnologyShenzhen518055China
| | - Feng Pan
- School of Advanced MaterialsPeking UniversityShenzhen Graduate SchoolShenzhen518055China
| | - Junhao Lin
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and DevicesSouthern University of Science and TechnologyShenzhen518055China
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113
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Soares DM, Singh G. Weyl semimetal orthorhombic Td-WTe 2as an electrode material for sodium- and potassium-ion batteries. NANOTECHNOLOGY 2021; 32:505402. [PMID: 34488215 DOI: 10.1088/1361-6528/ac23f3] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2021] [Accepted: 09/06/2021] [Indexed: 06/13/2023]
Abstract
Alkali metals such as sodium and potassium have become promising candidates for the next generation of monovalent-ion batteries. However, a challenge for these battery technologies lies in the development of electrode materials that deliver high capacity and stable performance even at high cycling currents. Here we study orthorhombic tungsten ditelluride or Td-WTe2as an electrode material for sodium- (SIB) and potassium-ion batteries (KIB) in propylene carbonate (PC) based electrolyte. Results show that despite larger Shannon's radius of potassium-ions and their sluggish diffusion in Td-WTe2due to higher overpotential, at 100 mA.g-1KIB-half cells showed higher cycling stability and low capacity decay of 4% versus 16% compared to SIB-half cells. Likewise, in a rate capability test at 61stcycle (at 50 mA.g-1), the KIB-half cells yielded charge capacity of 172 mAh.g-1versus 137 mAh.g-1of SIB-half cells. The superior electrochemical performance of Td-WTe2electrode material in KIB-half cells is explained based on the concept of Stokes' radius-smaller desolvation activation energy resulted in higher mobility of potassium-ions in PC-based electrolyte. In addition, the likely mechanisms of electrochemical insertion and extraction of Na- and K-ions in Td-WTe2are also discussed.
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Affiliation(s)
- Davi Marcelo Soares
- Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS, 66506, United States of America
| | - Gurpreet Singh
- Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS, 66506, United States of America
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114
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Gui X, Feng E, Cao H, Cava RJ. Ferromagnetic Cr 4PtGa 17: A Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice. J Am Chem Soc 2021; 143:14342-14351. [PMID: 34449205 DOI: 10.1021/jacs.1c06667] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
We describe the crystal structure and elementary magnetic properties of a previously unreported ternary intermetallic compound, Cr4PtGa17, which crystallizes in a rhombohedral unit cell in the noncentrosymmetric space group R3m. The crystal structure is closely related to those of XYZ half-Heusler compounds, where X, Y, and Z are reported to be single elements only, occupying three different face-centered-cubic sublattices. The new material, Cr4PtGa17, can be most straightforwardly illustrated by writing the formula as (PtGa2)(Cr4Ga14)Ga (X = PtGa2, Y = Cr4Ga14, Z = Ga); that is, the X and Y sites are occupied by clusters instead of single elements. The magnetic Cr occupies a breathing pyrochlore lattice. Ferromagnetic ordering is found below TC ∼ 61 K, by both neutron diffraction and magnetometer studies, with a small, saturated moment of ∼0.25 μB/Cr observed at 2 K, making Cr4PtGa17 the first ferromagnetically ordered material with a breathing pyrochlore lattice. A magnetoresistance of ∼140% was observed at 2 K. DFT calculations suggest that the material has a nearly half-metallic electronic structure. The new material, Cr4PtGa17, the first realization of both a half-Heusler-type structure and a breathing pyrochlore lattice, might pave a new way to achieve novel types of half-Heusler compounds.
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Affiliation(s)
- Xin Gui
- Department of Chemistry, Princeton University, Princeton, New Jersey 08540, United States
| | - Erxi Feng
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Huibo Cao
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Robert J Cava
- Department of Chemistry, Princeton University, Princeton, New Jersey 08540, United States
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115
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Joseph NB, Narayan A. Topological properties of bulk and bilayer 2M WS 2: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:465001. [PMID: 34399421 DOI: 10.1088/1361-648x/ac1de1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 08/16/2021] [Indexed: 06/13/2023]
Abstract
Recently discovered 2M phase of bulk WS2was observed to exhibit superconductivity with a critical temperature of 8.8 K, the highest reported among superconducting transition metal dichalcogenides. Also predicted to support protected surface states, it could be a potential topological superconductor. In the present study, we perform a detailed first-principles analysis of bulk and bilayer 2M WS2. We report a comprehensive investigation of the bulk phase, comparing structural and electronic properties obtained from different exchange correlation functionals to the experimentally reported values. By calculation of theZ2invariant and surface states, we give support for its non-trivial band nature. Based on the insights gained from the analysis of the bulk phase, we predict bilayer 2M WS2as a new two-dimensional topological material. We demonstrate its dynamical stability from first-principles phonon computations and present its electronic properties, highlighting the band inversions between the Wdand Spstates. By means ofZ2invariant computations and a calculation of the edge states, we show that bilayer 2M WS2exhibits protected, robust edge states. The broken inversion symmetry in this newly proposed bilayer also leads to the presence of Berry curvature dipole and resulting non-linear responses. We compute the Berry curvature distribution and the dipole as a function of Fermi energy. We propose that Berry curvature dipole signals, which are absent in the centrosymmetric bulk 2M WS2, can be signatures of the bilayer. We hope our predictions lead to the experimental realization of this as-yet-undiscovered two-dimensional topological material.
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Affiliation(s)
- Nesta Benno Joseph
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
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116
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Tang W, Liu H, Li Z, Pan A, Zeng Y. Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100847. [PMID: 34323390 PMCID: PMC8456225 DOI: 10.1002/advs.202100847] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Revised: 06/03/2021] [Indexed: 06/13/2023]
Abstract
Spin-orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high-performance SOT devices, which strongly rely on the spin-orbit coupling (SOC) strength and magnetic properties of ferromagnetic/non-magnetic heterostructures. Recently, van der Waals-layered materials have shown appealing properties for use in efficient SOT applications. On the one hand, transition-metal dichalcogenides, topological insulators, and graphene-based heterostructures possess appreciable SOC strength. This feature can efficiently converse the charge current into spin current and result in large SOT. On the other hand, the newly discovered layered magnetic materials provide ultra-thin and gate-tunable ferromagnetic candidates for high-performance SOT devices. In this review, the latest advancements of SOT research in various layered materials are summarized. First, a brief introduction of SOT is given. Second, SOT studies of various layered materials and heterostructures are summarized. Subsequently, progresses on SOT-induced magnetization switching are presented. Finally, current challenges and prospects for future development are suggested.
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Affiliation(s)
- Wei Tang
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Haoliang Liu
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Zhe Li
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Anlian Pan
- Key Laboratory for Micro‐Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha410082China
| | - Yu‐Jia Zeng
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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118
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Mende F, Noky J, Guin SN, Fecher GH, Manna K, Adler P, Schnelle W, Sun Y, Fu C, Felser C. Large Anomalous Hall and Nernst Effects in High Curie-Temperature Iron-Based Heusler Compounds. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100782. [PMID: 34240573 PMCID: PMC8425906 DOI: 10.1002/advs.202100782] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Revised: 04/29/2021] [Indexed: 05/22/2023]
Abstract
The interplay between topology and magnetism has recently sparked the frontier studies of magnetic topological materials that exhibit intriguing anomalous Hall and Nernst effects owning to the large intrinsic Berry curvature (BC). To better understand the anomalous quantum transport properties of these materials and their implications for future applications such as electronic and thermoelectric devices, it is crucial to discover more novel material platforms for performing anomalous transverse transport studies. Here, it is experimentally demonstrated that low-cost Fe-based Heusler compounds exhibit large anomalous Hall and Nernst effects. An anomalous Hall conductivity of 250-750 S cm-1 and Nernst thermopower of above 2 µV K-1 are observed near room temperature. The positive effect of anti-site disorder on the anomalous Hall transport is revealed. Considering the very high Curie temperature (nearly 1000 K), larger Nernst thermopowers at high temperatures are expected owing to the existing magnetic order and the intrinsic BC. This work provides a background for developing low-cost Fe-based Heusler compounds as a new material platform for anomalous transport studies and applications, in particular, near and above room temperature.
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Affiliation(s)
- Felix Mende
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
| | - Jonathan Noky
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
| | - Satya N. Guin
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
| | - Gerhard H. Fecher
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
| | - Kaustuv Manna
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
- Department of PhysicsIndian Institute of Technology DelhiHauz KhasNew Delhi110016India
| | - Peter Adler
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
| | - Walter Schnelle
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
| | - Yan Sun
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
| | - Chenguang Fu
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
- State Key Laboratory of Silicon Materials, and School of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of SolidsNöthnitzer Str. 40Dresden01187Germany
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119
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Muscher PK, Rehn DA, Sood A, Lim K, Luo D, Shen X, Zajac M, Lu F, Mehta A, Li Y, Wang X, Reed EJ, Chueh WC, Lindenberg AM. Highly Efficient Uniaxial In-Plane Stretching of a 2D Material via Ion Insertion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101875. [PMID: 34331368 DOI: 10.1002/adma.202101875] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Revised: 05/27/2021] [Indexed: 06/13/2023]
Abstract
On-chip dynamic strain engineering requires efficient micro-actuators that can generate large in-plane strains. Inorganic electrochemical actuators are unique in that they are driven by low voltages (≈1 V) and produce considerable strains (≈1%). However, actuation speed and efficiency are limited by mass transport of ions. Minimizing the number of ions required to actuate is thus key to enabling useful "straintronic" devices. Here, it is shown that the electrochemical intercalation of exceptionally few lithium ions into WTe2 causes large anisotropic in-plane strain: 5% in one in-plane direction and 0.1% in the other. This efficient stretching of the 2D WTe2 layers contrasts to intercalation-induced strains in related materials which are predominantly in the out-of-plane direction. The unusual actuation of Lix WTe2 is linked to the formation of a newly discovered crystallographic phase, referred to as Td', with an exotic atomic arrangement. On-chip low-voltage (<0.2 V) control is demonstrated over the transition to the novel phase and its composition. Within the Td'-Li0.5- δ WTe2 phase, a uniaxial in-plane strain of 1.4% is achieved with a change of δ of only 0.075. This makes the in-plane chemical expansion coefficient of Td'-Li0.5-δ WTe2 far greater than of any other single-phase material, enabling fast and efficient planar electrochemical actuation.
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Affiliation(s)
- Philipp K Muscher
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Daniel A Rehn
- Computational Physics Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Aditya Sood
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Kipil Lim
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Duan Luo
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Xiaozhe Shen
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Marc Zajac
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Feiyu Lu
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Apurva Mehta
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Yiyang Li
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Xijie Wang
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Evan J Reed
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - William C Chueh
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
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120
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Anisotropic Optical Response of WTe 2 Single Crystals Studied by Ellipsometric Analysis. NANOMATERIALS 2021; 11:nano11092262. [PMID: 34578578 PMCID: PMC8468096 DOI: 10.3390/nano11092262] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/17/2021] [Revised: 08/19/2021] [Accepted: 08/27/2021] [Indexed: 11/23/2022]
Abstract
In this paper we report the crystal growth conditions and optical anisotropy properties of Tungsten ditelluride (WTe2) single crystals. The chemical vapor transport (CVT) method was used for the synthesis of large WTe2 crystals with high crystallinity and surface quality. These were structurally and morphologically characterized by means of X-ray diffraction, optical profilometry and Raman spectroscopy. Through spectroscopic ellipsometry analysis, based on the Tauc–Lorentz model, we identified a high refractive index value (~4) and distinct tri-axial anisotropic behavior of the optical constants, which opens prospects for surface plasmon activity, revealed by the dielectric function. The anisotropic physical nature of WTe2 shows practical potential for low-loss light modulation at the 2D nanoscale level.
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121
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Liu M, Huang YL, Gou J, Liang Q, Chua R, Duan S, Zhang L, Cai L, Yu X, Zhong D, Zhang W, Wee ATS. Diverse Structures and Magnetic Properties in Nonlayered Monolayer Chromium Selenide. J Phys Chem Lett 2021; 12:7752-7760. [PMID: 34369783 DOI: 10.1021/acs.jpclett.1c01493] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Thickness-dependent magnetic behavior has previously been observed in chemical vapor deposition-grown chromium selenide. However, the low-dimensional structure in nonlayered chromium selenide, which plays a crucial role in determining the low-dimensional magnetic order, needs further study. Here, we report the structure-dependent magnetic properties in monolayer CrSe2 and Cr2Se3 grown by molecular beam epitaxy. In the monolayer CrSe2, 1T-CrSe2 with a lattice constant of 3.3 Å has a metallic character, coexisting with the 1T″ phase with 2 × 2 surface periodicity. Monolayer CrSe2 can be transformed into Cr2Se3 with a lattice constant of 3.6 Å by annealing at 300 °C. X-ray magnetic circular dichroism (XMCD) measurements combined with DFT calculations reveal that while the MBE-grown monolayer CrSe2 is antiferromagnetic, monolayer Cr2Se3 is ferromagnetic with a Curie temperature of ∼200 K. This work demonstrates the structural diversity in nonlayered chromium selenide and the critical effect of different structures on its electronic and magnetic properties.
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Affiliation(s)
- Meizhuang Liu
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Yu Li Huang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Jian Gou
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Qijie Liang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Rebekah Chua
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Sisheng Duan
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Lei Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - LiangLiang Cai
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore 117603, Singapore
| | - Dingyong Zhong
- School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Wenjing Zhang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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Yin X, Tang CS, Zheng Y, Gao J, Wu J, Zhang H, Chhowalla M, Chen W, Wee ATS. Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-)metallic phases. Chem Soc Rev 2021; 50:10087-10115. [PMID: 34396377 DOI: 10.1039/d1cs00236h] [Citation(s) in RCA: 67] [Impact Index Per Article: 22.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an extensive amount of interest amongst scientists and engineers alike and an intensive amount of research has brought about major breakthroughs in the electronic and optical properties of 2D materials. This in turn has generated considerable interest in novel device applications. With the polymorphic structural features of 2D-TMDs, this class of materials can exhibit both semiconducting and metallic (quasi-metallic) properties in their respective phases. This polymorphic property further increases the interest in 2D-TMDs both in fundamental research and for their potential utilization in novel high-performance device applications. In this review, we highlight the unique structural properties of few-layer and monolayer TMDs in the metallic 1T- and quasi-metallic 1T'-phases, and how these phases dictate their electronic and optical properties. An overview of the semiconducting-to-(quasi)-metallic phase transition of 2D-TMD systems will be covered along with a discussion on the phase transition mechanisms. The current development in the applications of (quasi)-metallic 2D-TMDs will be presented ranging from high-performance electronic and optoelectronic devices to energy storage, catalysis, piezoelectric and thermoelectric devices, and topological insulator and neuromorphic computing applications. We conclude our review by highlighting the challenges confronting the utilization of TMD-based systems and projecting the future developmental trends with an outlook of the progress needed to propel this exciting field forward.
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Affiliation(s)
- Xinmao Yin
- Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai 200444, China
| | - Chi Sin Tang
- Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, 138634, Singapore and Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Yue Zheng
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Jing Gao
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Jing Wu
- Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, 138634, Singapore
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China and Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China and Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
| | - Manish Chhowalla
- Department of Materials Science & Metallurgy, University of Cambridge, Cambridge, CB30FS, UK
| | - Wei Chen
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore. and Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
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Mukhopadhyay A, Singh K, Sen S, Mukherjee K, Nayak AK, Mohapatra N. Anomalous magnetoresistance and magneto-thermal properties of the half-Heuslers, RPdSi ( R=Y, Gd-Er). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:435804. [PMID: 34320469 DOI: 10.1088/1361-648x/ac1880] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Accepted: 07/28/2021] [Indexed: 06/13/2023]
Abstract
Here, we present a detailed study on the magnetic, magneto-transport, and magneto-thermal properties of the equiatomic half-Heusler compounds with the general formula,RPdSi (R= Y and rare-earth, Gd-Er). These materials crystallize in two different superstructures of the TiNiSi-type orthorhombic unit cell with the space groupsPnmaandPmmn. Our magnetic and heat capacity measurements reveal the onset of an antiferromagnetic (AFM) ordering in the temperature range 3-16 K for all the local moments bearingRPdSi compounds, while the non-magnetic analog, YPdSi exhibits a Pauli-paramagnetic behaviour. The AFM state of these compounds can be tuned by magnetic field and temperature as demonstrated by the magnetic measurements below the Neel temperature (TN). Most importantly, this tuning of the magnetic structure is well documented in the complex temperature and field dependence of magnetoresistance (MR) and magnetocaloric effect (MCE). Our study establishes a striking correlation of the commensurate/incommensurate AFM structure with that of positive/negative MR and MCE in this series of compounds. We emphasize that such a framework applies to a large number of AFM intermetallic systems.
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Affiliation(s)
- A Mukhopadhyay
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, 752050, Odisha, India
| | - Karan Singh
- School of Basic Sciences, Indian Institute of Technology Mandi, 175005, Himachal Pradesh, India
| | - Subir Sen
- School of Physical Sciences, National Institute of Science Education and Research, HBNI, Jatni-752050, India
| | - K Mukherjee
- School of Basic Sciences, Indian Institute of Technology Mandi, 175005, Himachal Pradesh, India
| | - A K Nayak
- School of Physical Sciences, National Institute of Science Education and Research, HBNI, Jatni-752050, India
| | - N Mohapatra
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, 752050, Odisha, India
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124
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Zhu R, Gao Z, Liang Q, Hu J, Wang JS, Qiu CW, Wee ATS. Observation of Anisotropic Magnetoresistance in Layered Nonmagnetic Semiconducting PdSe 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37527-37534. [PMID: 34333972 DOI: 10.1021/acsami.1c10500] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Anisotropy in crystals usually has remarkable consequences in two-dimensional (2D) materials, for example, black phosphorus, PdSe2, and SnS, arising from different lattice periodicities along different crystallographic directions. Electrical anisotropy has been successfully demonstrated in 2D materials, but anisotropic magnetoresistance in 2D materials is rarely studied. Herein, we report anisotropic magnetoresistance in layered nonmagnetic semiconducting PdSe2 flakes. Anisotropic magnetoresistance along the two crystalline axes under a perpendicular magnetic field is demonstrated, and the magnetoresistance along the a-axis is apparently different from the magnetoresistance along the b-axis. The magnetoresistance can also be flexibly tuned by applying a gate voltage, leveraging the semiconductor properties of PdSe2. The computed anisotropic electronic density of states and electronic mobility with ab initio density functional calculations support the anisotropic and measured magnetoresistance. Our findings advance the understanding of magnetoresistance in anisotropic transition-metal dichalcogenides and pave the way for potential applications in anisotropic spintronic devices.
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Affiliation(s)
- Rui Zhu
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Zhibin Gao
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Qijie Liang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Songshan Lake Materials Laboratory, Songshan Lake Mat Lab, Dongguan 523808, China
| | - Junxiong Hu
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Jian-Sheng Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
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125
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He Y, Gayles J, Yao M, Helm T, Reimann T, Strocov VN, Schnelle W, Nicklas M, Sun Y, Fecher GH, Felser C. Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi. Nat Commun 2021; 12:4576. [PMID: 34321475 PMCID: PMC8319177 DOI: 10.1038/s41467-021-24692-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Accepted: 07/01/2021] [Indexed: 11/21/2022] Open
Abstract
A large non-saturating magnetoresistance has been observed in several nonmagnetic topological Weyl semi-metals with high mobility of charge carriers at the Fermi energy. However, ferromagnetic systems rarely display a large magnetoresistance because of localized electrons in heavy d bands with a low Fermi velocity. Here, we report a large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi. MnBi, unlike conventional ferromagnets, exhibits a large linear non-saturating magnetoresistance of 5000% under a pulsed field of 70 T. The electrons and holes' mobilities are both 5000 cm2V-1s-1 at 2 K, which are one of the highest for ferromagnetic materials. These phenomena are due to the spin-polarised Bi 6p band's sharp dispersion with a small effective mass. Our study provides an approach to achieve high mobility in ferromagnetic systems with a high Curie temperature, which is advantageous for topological spintronics.
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Affiliation(s)
- Yangkun He
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany.
| | - Jacob Gayles
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany
- Department of Physics, University of South Florida, Tampa, FL, USA
| | - Mengyu Yao
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany
| | - Toni Helm
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany
- Dresden High Magnetic Field Laboratory (HLD-EMFL), Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - Tommy Reimann
- Dresden High Magnetic Field Laboratory (HLD-EMFL), Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | | | - Walter Schnelle
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany
| | - Michael Nicklas
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany
| | - Yan Sun
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany
| | - Gerhard H Fecher
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany
| | - Claudia Felser
- Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany
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126
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Deng Y, Li P, Zhu C, Zhou J, Wang X, Cui J, Yang X, Tao L, Zeng Q, Duan R, Fu Q, Zhu C, Xu J, Qu F, Yang C, Jing X, Lu L, Liu G, Liu Z. Controlled Synthesis of Mo xW 1-xTe 2 Atomic Layers with Emergent Quantum States. ACS NANO 2021; 15:11526-11534. [PMID: 34162202 DOI: 10.1021/acsnano.1c01441] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2, and alloyed MoxW1-xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1-xTe2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer MoxW1-xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples, respectively. Our results show that the electrical properties of MoxW1-xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.
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Affiliation(s)
- Ya Deng
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Peiling Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Zhu
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jiadong Zhou
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Xiaowei Wang
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jian Cui
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xue Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Li Tao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR, China
| | - Qingsheng Zeng
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Qundong Fu
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Chao Zhu
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR, China
| | - Fanming Qu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Changli Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiunian Jing
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Li Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Guangtong Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zheng Liu
- CINTRA CNRS/NTU/THALES, UMI 3288, Singapore 637553, Singapore
- School of Materials Science and Engineering, School of Physical and Mathematical Science and School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
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127
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Weng SR, Zhen WL, Yan X, Yue ZL, Hu HJ, Xu F, Zhang RR, Pi L, Zhu WK, Zhang CJ. Wide-spectrum photodetector constructed on a centimeter-scale flexible SnSe 2film using a new one-step strategy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:395001. [PMID: 34252886 DOI: 10.1088/1361-648x/ac1368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2021] [Accepted: 07/12/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials attached with flexible substrates enable possibilities to apply their superior properties to the rapidly increasing demand for foldable displays and wearable biosensors in the internet-of-things technology. However, previous two-step strategy to construct the flexible devices, namely first obtaining 2D materials elsewhere and then transferring them onto flexible substrates, can cause huge problems, including irreversibly undermining the device performance and limiting the material size. Here we propose a new one-step strategy (other than the liquid phase processing and low temperature synthesis methods), namely directly depositing appropriate 2D materials onto flexible substrates, which involves no transferring and can maintain the crystal quality and properties to the greatest extent. More importantly, this strategy in principle has no limit in the film size, hence removing a main obstacle for the practical use of flexible films, such as complex logic operations and large-area optoelectronic applications. Using this strategy, a centimeter-scale SnSe2film is directly grown on polydimethylsiloxane, which is characterized as a uniform, out-of-plane oriented and semiconducting film that is robust to deformations. Based on the film, a flexible photodetector is fabricated and distinct photoresponse to a broad spectrum of light (405-830 nm) is observed, with remarkable technical parameters.
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Affiliation(s)
- S R Weng
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W L Zhen
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - X Yan
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - Z L Yue
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - H J Hu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - F Xu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - R R Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - L Pi
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W K Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - C J Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
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128
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Shipunov G, Piening BR, Wuttke C, Romanova TA, Sadakov AV, Sobolevskiy OA, Guzovsky EY, Usoltsev AS, Pudalov VM, Efremov DV, Subakti S, Wolf D, Lubk A, Büchner B, Aswartham S. Layered van der Waals Topological Metals of TaTMTe 4 (TM = Ir, Rh, Ru) Family. J Phys Chem Lett 2021; 12:6730-6735. [PMID: 34264086 DOI: 10.1021/acs.jpclett.1c01648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Layered van der Waals materials of the family TaTMTe4 (TM = Ir, Rh, Ru) are showing interesting electronic properties. We report the growth and characterization of TaIrTe4, TaRhTe4, TaIr1-xRhxTe4 (x = 0.06, 0.14, 0.78, 0.92), Ta1+xRu1-xTe4 single crystals. X-ray powder diffraction confirms that TaRhTe4 is isostructural to TaIrTe4. All these compounds are metallic with diamagnetic behavior. Below T ≈ 4 K we observed signatures of the superconductivity in the TaIr1-xRhxTe4 compounds for x = 0.92. All samples show weak quadratic-in-field magnetoresistance (MR). However, for TaIr1-xRhxTe4 with x ≈ 0.78, the MR has a linear term dominating in low fields that indicates the presence of Dirac cones in the vicinity of the Fermi energy. For TaRhTe4 series the MR is almost isotropic. Electronic structure calculations for TaIrTe4 and TaRhTe4 reveal appearance of the Rh band close to the Fermi level.
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Affiliation(s)
- G Shipunov
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - B R Piening
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - C Wuttke
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - T A Romanova
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - A V Sadakov
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - O A Sobolevskiy
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - E Yu Guzovsky
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - A S Usoltsev
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - V M Pudalov
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - D V Efremov
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - S Subakti
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - D Wolf
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - A Lubk
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - B Büchner
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01062 Dresden, Germany
- Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - S Aswartham
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
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129
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Lee SE, Oh MJ, Ji S, Kim J, Jun JH, Kang W, Jo Y, Jung MH. Orbit topology analyzed from π phase shift of magnetic quantum oscillations in three-dimensional Dirac semimetal. Proc Natl Acad Sci U S A 2021; 118:e2023027118. [PMID: 34266947 PMCID: PMC8307846 DOI: 10.1073/pnas.2023027118] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
With the emergence of Dirac fermion physics in the field of condensed matter, magnetic quantum oscillations (MQOs) have been used to discern the topology of orbits in Dirac materials. However, many previous researchers have relied on the single-orbit Lifshitz-Kosevich (LK) formula, which overlooks the significant effect of degenerate orbits on MQOs. Since the single-orbit LK formula is valid for massless Dirac semimetals with small cyclotron masses, it is imperative to generalize the method applicable to a wide range of Dirac semimetals, whether massless or massive. This report demonstrates how spin-degenerate orbits affect the phases in MQOs of three-dimensional massive Dirac semimetal, NbSb2 With varying the direction of the magnetic field, an abrupt π phase shift is observed due to the interference between the spin-degenerate orbits. We investigate the effect of cyclotron mass on the π phase shift and verify its close relation to the phase from the Zeeman coupling. We find that the π phase shift occurs when the cyclotron mass is half of the electron mass, indicating the effective spin gyromagnetic ratio as g s = 2. Our approach is not only useful for analyzing MQOs of massless Dirac semimetals with a small cyclotron mass but also can be used for MQOs in massive Dirac materials with degenerate orbits, especially in topological materials with a sufficiently large cyclotron mass. Furthermore, this method provides a useful way to estimate the precise g s value of the material.
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Affiliation(s)
- Sang-Eon Lee
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Myeong-Jun Oh
- Department of Physics, Kyungpook National University, Daegu 41566, Korea
| | - Sanghyun Ji
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jinsu Kim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jin-Hyeon Jun
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Woun Kang
- Department of Physics, Ewha Womans University, Seoul 03760, Korea
| | - Younjung Jo
- Department of Physics, Kyungpook National University, Daegu 41566, Korea;
| | - Myung-Hwa Jung
- Department of Physics, Sogang University, Seoul 04107, Korea;
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130
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Lei S, Teicher SML, Topp A, Cai K, Lin J, Cheng G, Salters TH, Rodolakis F, McChesney JL, Lapidus S, Yao N, Krivenkov M, Marchenko D, Varykhalov A, Ast CR, Car R, Cano J, Vergniory MG, Ong NP, Schoop LM. Band Engineering of Dirac Semimetals Using Charge Density Waves. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101591. [PMID: 34137086 DOI: 10.1002/adma.202101591] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2021] [Revised: 04/03/2021] [Indexed: 06/12/2023]
Abstract
New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals, and Weyl semimetals. In the last few years, large efforts have been made to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For example, topological bands are frequently convoluted with trivial ones, and band structure features of interest can appear far below the Fermi level. This leaves just a handful of materials that are intensively studied. Finding strategies to design new topological materials is a solution. Here, a new mechanism is introduced, which is based on charge density waves and non-symmorphic symmetry, to design an idealized Dirac semimetal. It is then shown experimentally that the antiferromagnetic compound GdSb0.46 Te1.48 is a nearly ideal Dirac semimetal based on the proposed mechanism, meaning that most interfering bands at the Fermi level are suppressed. Its highly unusual transport behavior points to a thus far unknown regime, in which Dirac carriers with Fermi energy very close to the node seem to gradually localize in the presence of lattice and magnetic disorder.
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Affiliation(s)
- Shiming Lei
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
| | - Samuel M L Teicher
- Materials Department and Materials Research Laboratory, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Andreas Topp
- Max-Planck-Institut für Festkörperforschung, 70569, Stuttgart, Germany
| | - Kehan Cai
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
| | - Jingjing Lin
- Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Guangming Cheng
- Princeton Institute for The Science and Technology of Materials, Princeton, NJ, 08544, USA
| | - Tyger H Salters
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
| | - Fanny Rodolakis
- Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL, 60439, USA
| | - Jessica L McChesney
- Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL, 60439, USA
| | - Saul Lapidus
- Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL, 60439, USA
| | - Nan Yao
- Princeton Institute for The Science and Technology of Materials, Princeton, NJ, 08544, USA
| | - Maxim Krivenkov
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489, Berlin, Germany
| | - Dmitry Marchenko
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489, Berlin, Germany
| | - Andrei Varykhalov
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489, Berlin, Germany
| | - Christian R Ast
- Max-Planck-Institut für Festkörperforschung, 70569, Stuttgart, Germany
| | - Roberto Car
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
- Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Jennifer Cano
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11974, USA
- Center for Computational Quantum Physics, The Flatiron Institute, New York, NY, 10010, USA
| | - Maia G Vergniory
- Donostia International Physics Center, 20018 Donostia-San Sebastian, Spain and IKERBASQUE, Basque Foundation for Science, Maria Diaz de Haro 3, Bilbao, 48013, Spain
| | - N Phuan Ong
- Department of Physics, Princeton University, Princeton, NJ, 08544, USA
| | - Leslie M Schoop
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
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131
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Luo J, Liu W, Wang Z, Lei Y, Zhou X, Zhang M, Zhang C, Xie S, Liu Y, Wang Z, Su X, Tan G, Yan Y, Tang X. Strong Anisotropy and Bipolar Conduction-Dominated Thermoelectric Transport Properties in the Polycrystalline Topological Phase of ZrTe 5. Inorg Chem 2021; 60:8890-8897. [PMID: 34110152 DOI: 10.1021/acs.inorgchem.1c00781] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
ZrTe5 has unique features of a temperature-dependent topological electronic structure and anisotropic crystal structure and has obtained intensive attention from the thermoelectric community. This work revealed that the sintered polycrystalline bulk ZrTe5 possesses both (020) and (041) preferred orientations. The transport properties of polycrystalline bulk p-type ZrTe5 exhibits an obvious anisotropic characteristic, that is, the room-temperature resistivity and thermal conductivity, possessing anisotropy ratios of 0.71 and 1.49 perpendicular and parallel to the pressing direction, respectively. The polycrystalline ZrTe5 obtained higher ZT values in the direction perpendicular to the pressing direction, as compared to that in the other direction. The highest ZT value of 0.11 is achieved at 350 K. Depending on the temperature-dependent topological electronic structure, the electronic transport of p-type ZrTe5 is dominated by high-mobility electrons from linear bands and low-mobility holes from the valence band, which, however, are merely influenced by valence band holes at around room temperature. Furthermore, external magnetic fields are detrimental to thermoelectric properties of our ZrTe5, mainly arising from the more prominent negative effects of electrons under fields. This research is instructive to understand the transport features of ZrTe5 and paves the way for further optimizing their ZTs.
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Affiliation(s)
- Jiangfan Luo
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Wei Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Zhaohui Wang
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
| | - Yuzhu Lei
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xingyuan Zhou
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Min Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Cheng Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Sen Xie
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
| | - Yong Liu
- School of Physics and Technology, and the Key Laboratory of Artificial Micro/Nano Structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Ziyu Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Xianli Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Gangjian Tan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yonggao Yan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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Ma W, Xu X, Yin JX, Yang H, Zhou H, Cheng ZJ, Huang Y, Qu Z, Wang F, Hasan MZ, Jia S. Rare Earth Engineering in RMn_{6}Sn_{6} (R=Gd-Tm, Lu) Topological Kagome Magnets. PHYSICAL REVIEW LETTERS 2021; 126:246602. [PMID: 34213939 DOI: 10.1103/physrevlett.126.246602] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2020] [Accepted: 05/20/2021] [Indexed: 05/25/2023]
Abstract
Exploration of the topological quantum materials with electron correlation is at the frontier of physics, as the strong interaction may give rise to new topological phases and transitions. Here we report that a family of kagome magnets RMn_{6}Sn_{6} manifest the quantum transport properties analogical to those in the quantum-limit Chern magnet TbMn_{6}Sn_{6}. The topological transport in the family, including quantum oscillations with nontrivial Berry phase and large anomalous Hall effect arising from Berry curvature field, points to the existence of Chern gapped Dirac fermions. Our observation demonstrates a close relationship between rare-earth magnetism and topological electron structure, indicating the rare-earth elements can effectively engineer the Chern quantum phase in kagome magnets.
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Affiliation(s)
- Wenlong Ma
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Xitong Xu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Hui Yang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Huibin Zhou
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zi-Jia Cheng
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Yuqing Huang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Zhe Qu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
- CAS Key Laboratory of Photovoltaic and Energy Conservation Materials, Hefei Institutes of Physical Sciences, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Fa Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, West Building 3, No. 10 Xibeiwang East Road, Haidian District, Beijing 100193, China
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133
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Tanwar S, Arya A, Gaur A, Sharma AL. Transition metal dichalcogenide (TMDs) electrodes for supercapacitors: a comprehensive review. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:303002. [PMID: 33892487 DOI: 10.1088/1361-648x/abfb3c] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Accepted: 04/23/2021] [Indexed: 06/12/2023]
Abstract
As globally, the main focus of the researchers is to develop novel electrode materials that exhibit high energy and power density for efficient performance energy storage devices. This review covers the up-to-date progress achieved in transition metal dichalcogenides (TMDs) (e.g. MoS2, WS2, MoSe2,and WSe2) as electrode material for supercapacitors (SCs). The TMDs have remarkable properties like large surface area, high electrical conductivity with variable oxidation states. These properties enable the TMDs as the most promising candidates to store electrical energy via hybrid charge storage mechanisms. Consequently, this review article provides a detailed study of TMDs structure, properties, and evolution. The characteristics technique and electrochemical performances of all the efficient TMDs are highlighted meticulously. In brief, the present review article shines a light on the structural and electrochemical properties of TMD electrodes. Furthermore, the latest fabricated TMDs based symmetric/asymmetric SCs have also been reported.
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Affiliation(s)
- Shweta Tanwar
- Department of Physics, Central University of Punjab, Bathinda-151401, Punjab, India
| | - Anil Arya
- Department of Physics, Central University of Punjab, Bathinda-151401, Punjab, India
| | - Anurag Gaur
- Department of Physics, National Institute of Technology, Kurukshetra-136119, Haryana, India
| | - A L Sharma
- Department of Physics, Central University of Punjab, Bathinda-151401, Punjab, India
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134
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Zhang HY, Chen XG, Tang YY, Liao WQ, Di FF, Mu X, Peng H, Xiong RG. PFM (piezoresponse force microscopy)-aided design for molecular ferroelectrics. Chem Soc Rev 2021; 50:8248-8278. [PMID: 34081064 DOI: 10.1039/c9cs00504h] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With prosperity, decay, and another spring, molecular ferroelectrics have passed a hundred years since Valasek first discovered ferroelectricity in the molecular compound Rochelle salt. Recently, the proposal of ferroelectrochemistry has injected new vigor into this century-old research field. It should be highlighted that piezoresponse force microscopy (PFM) technique, as a non-destructive imaging and manipulation method for ferroelectric domains at the nanoscale, can significantly speed up the design rate of molecular ferroelectrics as well as enhance the ferroelectric and piezoelectric performances relying on domain engineering. Herein, we provide a brief review of the contribution of the PFM technique toward assisting the design and performance optimization of molecular ferroelectrics. Relying on the relationship between ferroelectric domains and crystallography, together with other physical characteristics such as domain switching and piezoelectricity, we believe that the PFM technique can be effectively applied to assist the design of high-performance molecular ferroelectrics equipped with multifunctionality, and thereby facilitate their practical utilization in optics, electronics, magnetics, thermotics, and mechanics among others.
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Affiliation(s)
- Han-Yue Zhang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, P. R. China.
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135
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Ji S, Grånäs O, Weissenrieder J. Manipulation of Stacking Order in Td-WTe 2 by Ultrafast Optical Excitation. ACS NANO 2021; 15:8826-8835. [PMID: 33913693 PMCID: PMC8291768 DOI: 10.1021/acsnano.1c01301] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2021] [Accepted: 04/27/2021] [Indexed: 06/12/2023]
Abstract
Subtle changes in stacking order of layered transition metal dichalcogenides may have profound influence on the electronic and optical properties. The intriguing electronic properties of Td-WTe2 can be traced to the break of inversion symmetry resulting from the ground-state stacking sequence. Strategies for perturbation of the stacking order are actively pursued for intentional tuning of material properties, where optical excitation is of specific interest since it holds the potential for integration of ultrafast switches in future device designs. Here we investigate the structural response in Td-WTe2 following ultrafast photoexcitation by time-resolved electron diffraction. A 0.23 THz shear phonon, involving layer displacement along the b axis, was excited by a 515 nm laser pulse. Pump fluences in excess of a threshold of ∼1 mJ/cm2 result in formation, with an ∼5 ps time constant, of a new stacking order by layer displacement along the b axis in the direction toward the centrosymmetric 1T* phase. The shear displacement of the layers increases with pump fluence until saturation at ∼8 pm. We demonstrate that the excitation of the shear phonon and the stabilization of the metastable phase are decoupled when using an optical pump as evidenced by observation of a transition also in samples with a pinned shear phonon. The results are compared to dynamic first-principles simulations and the transition is interpreted in terms of a mechanism where transient local disorder is prominent before settling at the atomic positions of the metastable phase. This interpretation is corroborated by results from diffuse scattering. The correlation between excitation of intralayer vibrations and interlayer interaction demonstrates the importance of including both short- and long-range interactions in an accurate description of how optical fields can be employed to manipulate the stacking order in 2-dimensional transition metal dichalcogenides.
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Affiliation(s)
- Shaozheng Ji
- Materials
and Nano Physics, School of Engineering Sciences, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
| | - Oscar Grånäs
- Division
for Materials Theory, Department of Physics and Astronomy, Uppsala University, SE-751 20 Uppsala, Sweden
| | - Jonas Weissenrieder
- Materials
and Nano Physics, School of Engineering Sciences, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
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136
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Li S, Dong Q, Feng J, Wang Y, Hou M, Deng W, Susilo RA, Li N, Dong H, Wan S, Gao C, Chen B. Evolution of Structural and Electronic Properties in NbTe 2 under High Pressure. Inorg Chem 2021; 60:7857-7864. [PMID: 34015921 DOI: 10.1021/acs.inorgchem.1c00360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Transition metal dichalcogenides (TMDs) have attracted wide attention due to their quasi-two-dimensional layered structure and exotic properties. Plenty of efforts have been done to modulate the interlayer stacking manner for novel states. However, as an equally important element in shaping the unique properties of TMDs, the effect of intralayer interaction is rarely revealed. Here, we report a particular case of pressure-tuned re-arrangement of intralayer atoms in distorted 1T-NbTe2, which was demonstrated to be a new type of structural phase transition in TMDs. The structural transition occurs in the pressure range of 16-20 GPa, resulting in a transformation of Nb atomic arrangement from the trimeric to dimeric structure, accompanied by a dramatic collapse of unit cell volume and lattice parameters. Simultaneously, a charge density wave (CDW) was also found to collapse during the phase transition. The strong increase in the critical fluctuations of CDW induces a significant decline in the electronic correlation and a change of charge carrier type from hole to electron in NbTe2. Our finding reveals a new mechanism of structure evolution and expands the field of pressure-induced phase transition.
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Affiliation(s)
- Shujia Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.,Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Qing Dong
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
| | - Jiajia Feng
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Yanju Wang
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Mingqiang Hou
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China.,Institute of Meteoritics, Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131, United Sstates
| | - Wen Deng
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Resta A Susilo
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Nana Li
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Shun Wan
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Chunxiao Gao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
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137
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Li Y, Wang M, Yi Y, Lu C, Dou S, Sun J. Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005573. [PMID: 33734605 DOI: 10.1002/smll.202005573] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Revised: 10/21/2020] [Indexed: 06/12/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.
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Affiliation(s)
- Yihui Li
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Menglei Wang
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Yuyang Yi
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Chen Lu
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
- Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2522, Australia
| | - Shixue Dou
- Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2522, Australia
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
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138
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Pal D, Kumar S, Shahi P, Dan S, Verma A, Gangwar VK, Singh M, Chakravarty S, Uwatoko Y, Saha S, Patil S, Chatterjee S. Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP. Sci Rep 2021; 11:9104. [PMID: 33907273 PMCID: PMC8079386 DOI: 10.1038/s41598-021-88669-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2020] [Accepted: 03/03/2021] [Indexed: 02/02/2023] Open
Abstract
The magneto-transport, magnetization and theoretical electronic-structure have been investigated on type-II Weyl semimetallic MoTeP. The ferromagnetic ordering is observed in the studied sample and it has been shown that the observed magnetic ordering is due to the defect states. It has also been demonstrated that the presence of ferromagnetic ordering in effect suppresses the magnetoresistance (MR) significantly. Interestingly, a change-over from positive to negative MR is observed at higher temperature which has been attributed to the dominance of spin scattering suppression.
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Affiliation(s)
- Debarati Pal
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India
| | - Shiv Kumar
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima City, 739-0046, Japan
| | - Prashant Shahi
- Department of Physics, D.D.U. Gorakhpur University, Gorakhpur, 273009, India
| | - Sambhab Dan
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India
| | - Abhineet Verma
- Department of Chemistry, Institute of Science (Banaras Hindu University), Varanasi, 221005, India
| | - Vinod K Gangwar
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India
| | - Mahima Singh
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India
| | - Sujoy Chakravarty
- UGC-DAE Consortium for Scientific Research, Kalpakkam Node, Kokilamedu, 603104, India
| | - Yoshiya Uwatoko
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
| | - Satyen Saha
- Department of Chemistry, Institute of Science (Banaras Hindu University), Varanasi, 221005, India
| | - Swapnil Patil
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India.
| | - Sandip Chatterjee
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India.
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139
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Shao J, Yan L. Longitudinal magnetoconductivity of tilted type-I Weyl semimetals from semiclassical to ultra-quantum regime. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:185704. [PMID: 33711830 DOI: 10.1088/1361-648x/abee3e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Accepted: 03/12/2021] [Indexed: 06/12/2023]
Abstract
Weyl semimetals (WSMs) display many unusual magnetotransport phenomena. Here, based on the Landau quantization and Boltzmann equation, we theoretically study the longitudinal magnetoconductivity for tilted type-I WSMs from weak to strong magnetic field within a unified framework. It is found that, in semiclassical (weak magnetic field) regime, the conductivity has an angular dependentB-linear term besides theB-quadratic term common to isotropic nodes. In ultra-quantum (strong magnetic field) regime, the magnetoconductivity shows a linear dependence onB, and this dependence is affected by the tilt. In the intermediate regime, magnetoconductivity shows a tilt-modified quantum oscillation behavior due to the oscillation in the density of state. These findings recover the results for isotropic nodes without tilt, and suggest a possible way to identify the tilt axis of tilted WSMs through magnetotransport experiment.
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Affiliation(s)
- Jianmei Shao
- College of Electronics & Information Engineering, Guangdong Ocean University, Zhanjiang 524088, Guangdong, People's Republic of China
| | - Lijuan Yan
- College of Electronics & Information Engineering, Guangdong Ocean University, Zhanjiang 524088, Guangdong, People's Republic of China
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140
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Kumar P, Nagpal V, Sudesh S, Patnaik S. Chiral Anomaly Induced Negative Magnetoresistance and Weak Anti-Localization in Weyl Semimetal Bi0.097Sb0.03 alloy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:055601. [PMID: 33849001 DOI: 10.1088/1361-648x/abf7a3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Experimental access to massless Weyl fermions through topological materials promises substantial technological ramifications. Here, we report magneto-transport properties of Bi1- xSbx alloy near the quantum critical point x = 3% and 3.5%. The two compositions that are synthesized and studied are single crystals of Bi0.97Sb0.03 and Bi0.965Sb0.035. We observe a transition from semimetal to semiconductor with the application of magnetic field in both specimen. An extremely large transverse magnetoresistance (MR) 1.8×105 % and 8.2×104 % at 2.5K and 6T is observed in Bi0.97Sb0.03 and Bi0.965Sb0.035, respectively. Kohler scaling of transverse MR reveals the crossover of low field quadratic MR to a high field linear MR at low temperatures in both samples. A decrease in longitudinal MR (LMR) is observed only in Bi0.97Sb0.03 that implies the presence of chiral anomaly associated with the Weyl state at the crossover point (x=0.03) in Bi1-xSbx system. The chiral anomaly is absent for the sample Bi0.965Sb0.035. A sharp increase in longitudinal resistivity for Bi0.97Sb0.03 close to zero magnetic fields indicates the weak anti-localization effect in Bi0.97Sb0.03. Extremely high carrier concentrations and high mobilities have been recorded for both the samples.
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Affiliation(s)
- Pawan Kumar
- School of Physical Sciences, Jawaharlal Nehru University, Jawaharlal Nehru University Campus, New Delhi, Delhi, 110067, INDIA
| | - Vipin Nagpal
- School of Physical Sciences, Jawaharlal Nehru University, C/O PROF. S. PATNAIK, LAB 119, SCHOOL OF PHYSICAL SCIENCES, JAWA, NEW DELHI, New Delhi, Delhi, 110067, INDIA
| | - Sudesh Sudesh
- Department of Physics, Banasthali Vidyapith, Department of Physics, Urja mandir, Banasthali Vidyapith, Jaipur, 304022, INDIA
| | - Satyabrata Patnaik
- School of Physical Sciences, Jawaharlal Nehru University, Jawaharlal Nehru University Campus, New Delhi, 110067, INDIA
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141
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Zhang W, Fang Y, Zhang Z, Tian F, Huang Y, Wang X, Huang X, Huang F, Cui T. A New Superconducting 3R-WS 2 Phase at High Pressure. J Phys Chem Lett 2021; 12:3321-3327. [PMID: 33769817 DOI: 10.1021/acs.jpclett.1c00312] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
High-pressure investigation has been shown to be of paramount significance for changing the conventional lattice or bringing fascinating properties, especially inducing superconducting phases. Here we studied the application of pressure to the recently synthesized 2M-WS2 with the record Tc (8.8 K) among transition metal dichalcogenides (TMDs) at ambient pressure by electrical resistance investigations, synchrotron X-ray studies, and theoretical calculations. Tc in the initial 2M-WS2 dropped from the maximum to become undetected, accompanied by a phase transition into a semiconductor, 3R-WS2, at 15 GPa. The successive metallization and superconducting transitions in 3R-WS2 were observed at 48.8 GPa with Tc ≈ 2.5 K. This is the first experimental case in which superconductivity has been realized in the 3R phase among TMDs. We propose that the degradation of superconductivity in 2M-WS2 and the reemergence of superconductivity in 3R-WS2 are mainly attributable to changes in the density of states near the Fermi surface driven by the interlayer coupling.
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Affiliation(s)
- Wenting Zhang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Yuqiang Fang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zihan Zhang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Fubo Tian
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Yanping Huang
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Xin Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Xiaoli Huang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Tian Cui
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
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142
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Tiwari A, Chen F, Zhong S, Drueke E, Koo J, Kaczmarek A, Xiao C, Gao J, Luo X, Niu Q, Sun Y, Yan B, Zhao L, Tsen AW. Giant c-axis nonlinear anomalous Hall effect in T d-MoTe 2 and WTe 2. Nat Commun 2021; 12:2049. [PMID: 33824340 PMCID: PMC8024290 DOI: 10.1038/s41467-021-22343-5] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2021] [Accepted: 03/10/2021] [Indexed: 02/01/2023] Open
Abstract
While the anomalous Hall effect can manifest even without an external magnetic field, time reversal symmetry is nonetheless still broken by the internal magnetization of the sample. Recently, it has been shown that certain materials without an inversion center allow for a nonlinear type of anomalous Hall effect whilst retaining time reversal symmetry. The effect may arise from either Berry curvature or through various asymmetric scattering mechanisms. Here, we report the observation of an extremely large c-axis nonlinear anomalous Hall effect in the non-centrosymmetric Td phase of MoTe2 and WTe2 without intrinsic magnetic order. We find that the effect is dominated by skew-scattering at higher temperatures combined with another scattering process active at low temperatures. Application of higher bias yields an extremely large Hall ratio of E⊥/E|| = 2.47 and corresponding anomalous Hall conductivity of order 8 × 107 S/m.
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Affiliation(s)
- Archana Tiwari
- Institute for Quantum Computing, Department of Physics and Astronomy, and Department of Chemistry, University of Waterloo, Waterloo, ON, Canada
| | - Fangchu Chen
- Institute for Quantum Computing, Department of Physics and Astronomy, and Department of Chemistry, University of Waterloo, Waterloo, ON, Canada
| | - Shazhou Zhong
- Institute for Quantum Computing, Department of Physics and Astronomy, and Department of Chemistry, University of Waterloo, Waterloo, ON, Canada
| | - Elizabeth Drueke
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Jahyun Koo
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Austin Kaczmarek
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Cong Xiao
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Jingjing Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, China
| | - Qian Niu
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Yuping Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Liuyan Zhao
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Adam W Tsen
- Institute for Quantum Computing, Department of Physics and Astronomy, and Department of Chemistry, University of Waterloo, Waterloo, ON, Canada.
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143
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Yang H, Zhao Y, Wen Q, Yang R, Liu Y, Li H, Zhai T. Single WTe 2 Sheet-Based Electrocatalytic Microdevice for Directly Detecting Enhanced Activity of Doped Electronegative Anions. ACS APPLIED MATERIALS & INTERFACES 2021; 13:14302-14311. [PMID: 33733726 DOI: 10.1021/acsami.1c01091] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The high electrical conductivity of 1T'-WTe2 deserves particular attention and may show a high potential for hydrogen evolution reaction (HER) catalysis. However, the actual activity certainly does not match expectations, and the inferior HER activity is actually still ambiguous at the atomic level. Unraveling the underlying HER behaviors of 1T'-WTe2 will give rise to a new family of HER catalysts. Our structural analysis reveals that the inferior activity could result from insufficient charge density around the Te site and blocked adsorption channel at the W site, which cause too weak hydrogen adsorption. Herein, we fabricated a single WTe2 sheet-based electrocatalytic microdevice for directly extracting enhanced HER activity of doped electronegative F atoms. The overpotential at -10 mA cm-2 reduced to 0.27 V after F doping compared to 0.45 V for the original state. In situ electrochemical measurement and electrical tests on a single sheet indicate that doped F can regulate surface charge and hydrogen adsorption behavior. Furthermore, the theory simulation uncovers that the smaller atomic radius of F contributes to an empty coordination environment; meanwhile, strong electronegativity induces hydrogen adsorption. Thus, the ΔGH* at W sites around the doped F is as low as 0.18 eV. Synergistically modulating the charge properties and opening steric hindrance provides a new pathway to rationally construct electrocatalysts and beyond.
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Affiliation(s)
- Huan Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Qunlei Wen
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Ruoou Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Youwen Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
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144
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Zhao H, Li W, Chen Y, Xu C, Li B, Luo W, Qian D, Shi Z. Transport property of multi-band topological material PtBi[Formula: see text] studied by maximum entropy mobility spectrum analysis (MEMSA). Sci Rep 2021; 11:6249. [PMID: 33737569 PMCID: PMC7973776 DOI: 10.1038/s41598-021-85364-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2020] [Accepted: 02/26/2021] [Indexed: 12/03/2022] Open
Abstract
Electrical transport of both longitudinal and transverse directions carries rich information. Mobility spectrum analysis (MSA) is capable of extracting charge information from conductivity tensor, including charge types, concentration and mobilities. Using a numerical method based on maximum entropy principle, i.e., maximum entropy mobility spectrum analysis (MEMSA), mobility spectrum for [Formula: see text]-type PtBi[Formula: see text] is studied. Three hole-pockets and two electron-pockets were found, including a small hole pocket with very high mobility, which is very likely corresponding to Dirac Fermions. Benefiting from our high resolution result, we studied temperature dependence of carrier properties and explained the sign change phenomenon of Hall conductivity. We further compared the results with band structure obtained by our first principle calculation. The present results prove MEMSA is a useful tool of extracting carries' information in recently discovered Iron-based superconductors, and topological materials.
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Affiliation(s)
- Haijun Zhao
- School of Physics, Southeast University, Nanjing, 211189 China
| | - Wenchong Li
- School of Physics, Southeast University, Nanjing, 211189 China
| | - Yue Chen
- School of Physics, Southeast University, Nanjing, 211189 China
| | - Chunqiang Xu
- School of Physics, Southeast University, Nanjing, 211189 China
| | - Bin Li
- Information Physics Research Center, Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
| | - Weidong Luo
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240 China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240 China
| | - Dong Qian
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240 China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240 China
| | - Zhixiang Shi
- School of Physics, Southeast University, Nanjing, 211189 China
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145
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Sun Y, Terrones M, Schaak RE. Colloidal Nanostructures of Transition-Metal Dichalcogenides. Acc Chem Res 2021; 54:1517-1527. [PMID: 33662209 DOI: 10.1021/acs.accounts.1c00006] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
ConspectusLayered transition-metal dichalcogenides (TMDs) are intriguing two-dimensional (2D) compounds where metal and chalcogen atoms are covalently bonded in each monolayer, and the monolayers are held together by weak van der Waals forces. Distinct from graphene, which is chemically inert, layered TMDs exhibit a wide range of electronic, optical, catalytic, and magnetic properties dependent upon their compositions, crystal structures, and thicknesses, which make them fundamentally and technologically important. TMD nanostructures are traditionally synthesized using gas-phase chemical deposition methods, which are typically limited to small-scale samples of substrate-bound planar materials. Colloidal synthesis has emerged as an alternative synthesis approach to enable the scalable synthesis of free-standing TMDs. The judicious selection of precursors, solvents, and capping ligands together with the optimization of synthesis parameters such as concentrations and temperatures leads to the fabrication of colloidal TMD nanostructures exhibiting tunable properties. In addition, understanding the formation and transformation of TMD nanostructures in solution contributes to the discovery of important structure-function relationships, which may be extendable to other anisotropic systems.In this Account, we summarize recent progress in the colloidal synthesis, characterization, and applications of TMD nanostructures with tunable compositions, structures, and thicknesses. On the basis of the preparation of Mo- and W-based disulfide, diselenide, and ditelluride nanostructures, we discuss examples of phase engineering where various metastable TMD compounds can be directly accessed at low temperatures in solution. We also analyze the chemistry involved in broadly tuning the composition across the MoSe2-WSe2, WS2-WSe2, and MoTe2-WTe2 solid solutions as well as atomic-level microscopic characterization and the resulting composition-tunable properties. We then highlight how the high densities of defects in the colloidally synthesized TMD nanostructures enable unique catalytic properties, including their ability to facilitate the selective hydrogenation of substituted nitroarenes using molecular hydrogen. Finally, using this library of colloidal TMD nanostructures as substrates, we discuss the pathways by which noble metals deposit onto them in solution. We highlight the importance of the relative strengths of the interfacial metal-chalcogen bonds in determining the sizes and morphologies of the deposited noble metal components. These synthesis capabilities for colloidal TMD nanostructures, which have been generalized to a library of composition-tunable phases, enable new systematic studies of structure-property relationships and chemical reactivity in this important class of 2D materials.
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146
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Kumar N, Guin SN, Manna K, Shekhar C, Felser C. Topological Quantum Materials from the Viewpoint of Chemistry. Chem Rev 2021; 121:2780-2815. [PMID: 33151662 PMCID: PMC7953380 DOI: 10.1021/acs.chemrev.0c00732] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Indexed: 11/29/2022]
Abstract
Topology, a mathematical concept, has recently become a popular and truly transdisciplinary topic encompassing condensed matter physics, solid state chemistry, and materials science. Since there is a direct connection between real space, namely atoms, valence electrons, bonds, and orbitals, and reciprocal space, namely bands and Fermi surfaces, via symmetry and topology, classifying topological materials within a single-particle picture is possible. Currently, most materials are classified as trivial insulators, semimetals, and metals or as topological insulators, Dirac and Weyl nodal-line semimetals, and topological metals. The key ingredients for topology are certain symmetries, the inert pair effect of the outer electrons leading to inversion of the conduction and valence bands, and spin-orbit coupling. This review presents the topological concepts related to solids from the viewpoint of a solid-state chemist, summarizes techniques for growing single crystals, and describes basic physical property measurement techniques to characterize topological materials beyond their structure and provide examples of such materials. Finally, a brief outlook on the impact of topology in other areas of chemistry is provided at the end of the article.
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Affiliation(s)
- Nitesh Kumar
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Satya N. Guin
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Kaustuv Manna
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Chandra Shekhar
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
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147
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Falin A, Holwill M, Lv H, Gan W, Cheng J, Zhang R, Qian D, Barnett MR, Santos EJG, Novoselov KS, Tao T, Wu X, Li LH. Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS 2, WSe 2, and WTe 2. ACS NANO 2021; 15:2600-2610. [PMID: 33503379 DOI: 10.1021/acsnano.0c07430] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) tungsten disulfide (WS2), tungsten diselenide (WSe2), and tungsten ditelluride (WTe2) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS2, WSe2, and WTe2 using a complementary suite of experiments and theoretical calculations. High-quality 1L WS2 has the highest Young's modulus (302.4 ± 24.1 GPa) and strength (47.0 ± 8.6 GPa) of the entire family, overpassing those of 1L WSe2 (258.6 ± 38.3 and 38.0 ± 6.0 GPa, respectively) and WTe2 (149.1 ± 9.4 and 6.4 ± 3.3 GPa, respectively). However, the elasticity and strength of WS2 decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in an equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by the finite element method and density functional theory calculations including van der Waals interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS2 and WSe2 are largely stable in air for up to 20 weeks. Intriguingly, the 1-3L WSe2 shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications such as strain engineering and flexible field-effect transistors.
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Affiliation(s)
- Alexey Falin
- Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Matthew Holwill
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Haifeng Lv
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Material Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Gan
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Jun Cheng
- Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Rui Zhang
- Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Dong Qian
- Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Matthew R Barnett
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Elton J G Santos
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, EH9 3FD Edinburgh, United Kingdom
- The Higgs Centre for Theoretical Physics, The University of Edinburgh, EH9 3FD Edinburgh, United Kingdom
| | - Konstantin S Novoselov
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
- Department of Material Science and Engineering, National University of Singapore, 117575 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 117546 Singapore
| | - Tao Tao
- Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Material Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lu Hua Li
- Institute for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Geelong, Victoria 3216, Australia
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148
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Rahman S, Liu B, Wang B, Tang Y, Lu Y. Giant Photoluminescence Enhancement and Resonant Charge Transfer in Atomically Thin Two-Dimensional Cr 2Ge 2Te 6/WS 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:7423-7433. [PMID: 33535756 DOI: 10.1021/acsami.0c20110] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Hybridization of two-dimensional (2D) magnetic semiconductors with transition-metal dichalcogenides (TMDC) monolayers can significantly engineer the light-matter interactions and provide a promising platform for enhanced excitonic systems with artificially tailored band alignments. Here, we report the fabrication of heterostructures with monolayer WS2 on 2D Cr2Ge2Te6 (CGT), which displayed giant photoluminescence enhancement at specific CGT layer numbers. The highly enhanced quantum yield obtained can be explained by novel photoexcited carrier dynamics, facilitated by alternate relaxation channels, resulting in resonance charge transfer at the heterointerface. 2D CGT revealed a strongly layer-dependent work function (up to ∼750 meV), which greatly modulates the band positioning in the heterostructure. These heterostructures conceived both type I and type II band alignments, which are verified by Kelvin probe force microscopy and PL measurements. In addition to layer modulation, we uncover temperature and power dependence of the resonance charge transfer in the multilayer heterostructure. Our findings provide further insights into the ultrafast charge dynamics occurring at the atomic interfaces. The results may pave the way for novel optoelectronics based on van der Waals heterostructures.
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Affiliation(s)
- Sharidya Rahman
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra 2601, Australia
| | - Boqing Liu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra 2601, Australia
| | - Bowen Wang
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra 2601, Australia
| | - Yilin Tang
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra 2601, Australia
| | - Yuerui Lu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra 2601, Australia
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149
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Schmidt P, Schneiderhan P, Ströbele M, Romao CP, Meyer HJ. Reversible Iodine Intercalation into Tungsten Ditelluride. Inorg Chem 2021; 60:1411-1418. [PMID: 33450155 DOI: 10.1021/acs.inorgchem.0c02676] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The new compound WTe2I was prepared by a reaction of WTe2 with iodine in a fused silica ampule at temperatures between 40 and 200 °C. Iodine atoms are intercalated into the van der Waals gap between tungsten ditelluride layers. As a result, the WTe2 layer separation is significantly increased. Iodine atoms form planar layers between each tungsten ditelluride layer. Due to oxidation by iodine the semimetallic nature of WTe2 is changed, as shown by comparative band structure calculations for WTe2 and WTe2I based on density functional theory. The calculated phonon band structure of WTe2I indicates the presence of phonon instabilities related to charge density waves, leading to an observed incommensurate modulation of the iodine position within the layers.
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Affiliation(s)
- Patrick Schmidt
- Section of Solid State and Theoretical Inorganic Chemistry Institute of Inorganic Chemistry, Eberhard Karls University Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
| | - Philipp Schneiderhan
- Section of Solid State and Theoretical Inorganic Chemistry Institute of Inorganic Chemistry, Eberhard Karls University Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
| | - Markus Ströbele
- Section of Solid State and Theoretical Inorganic Chemistry Institute of Inorganic Chemistry, Eberhard Karls University Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
| | - Carl P Romao
- Section of Solid State and Theoretical Inorganic Chemistry Institute of Inorganic Chemistry, Eberhard Karls University Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
| | - Hans-Jürgen Meyer
- Section of Solid State and Theoretical Inorganic Chemistry Institute of Inorganic Chemistry, Eberhard Karls University Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
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150
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Wang P, Yu G, Jia Y, Onyszczak M, Cevallos FA, Lei S, Klemenz S, Watanabe K, Taniguchi T, Cava RJ, Schoop LM, Wu S. Landau quantization and highly mobile fermions in an insulator. Nature 2021; 589:225-229. [DOI: 10.1038/s41586-020-03084-9] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2019] [Accepted: 10/21/2020] [Indexed: 11/09/2022]
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