Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

Emerging 0D Transition-Metal Dichalcogenides for Sensors, Biomedicine, and Clean Energy

Following research on two-dimensional (2D) transition metal dichalcogenides (TMDs), zero-dimensional (0D) TMDs nanostructures have also garnered some attention due to their unique properties; exploitable for new applications. The 0D TMDs nanostructures stand distinct from their larger 2D TMDs cousins in terms of their general structure and properties. 0D TMDs possess higher bandgaps, ultra-small sizes, high surface-to-volume ratios with more active edge sites per unit mass. So far, reported 0D TMDs can be mainly classified as quantum dots, nanodots, nanoparticles, and small nanoflakes. All exhibited diverse applications in various fields due to their unique and excellent properties. Of significance, through exploiting inherent characteristics of 0D TMDs materials, enhanced catalytic, biomedical, and photoluminescence applications can be realized through this exciting sub-class of TMDs. Herein, we comprehensively review the properties and synthesis methods of 0D TMDs nanostructures and focus on their potential applications in sensor, biomedicine, and energy fields. This article aims to educate potential adopters of these excitingly new nanomaterials as well as to inspire and promote the development of more impactful applications. Especially in this rapidly evolving field, this review may be a good resource of critical insights and in-depth comparisons between the 0D and 2D TMDs.

Tailoring graphene layer-to-layer growth

A layered material grown between a substrate and the upper layer involves complex interactions and a confined reaction space, representing an unusual growth mode. Here, we show multi-layer graphene domains grown on liquid or solid Cu by the chemical vapor deposition method via this 'double-substrate' mode. We demonstrate the interlayer-induced coupling effect on the twist angle in bi- and multi-layer graphene. We discover dramatic growth disunity for different graphene layers, which is explained by the ideas of a chemical 'gate' and a material transport process within a confined space. These key results lead to a consistent framework for understanding the dynamic evolution of multi-layered graphene flakes and tailoring the layer-to-layer growth for practical applications.

Controlled Chemical Synthesis in CVD Graphene

Due to the unique properties of graphene, single layer, bilayer or even few layer graphene peeled off from bulk graphite cannot meet the need of practical applications. Large size graphene with quality comparable to mechanically exfoliated graphene has been synthesized by chemical vapor deposition (CVD). The main development and the key issues in controllable chemical vapor deposition of graphene has been briefly discussed in this chapter. Various strategies for graphene layer number and stacking control, large size single crystal graphene domains on copper, graphene direct growth on dielectric substrates, and doping of graphene have been demonstrated. The methods summarized here will provide guidance on how to synthesize other two-dimensional materials beyond graphene.

Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

We have examined graphene absorption in a range of graphene-based infrared devices that combine either monolayer or bilayer graphene with three different gate dielectrics. Electromagnetic simulations show that the optical absorption in graphene in these devices, an important factor in a functional graphene-based detector, is strongly dielectric-dependent. These simulations reveal that plasmonic excitation in graphene can significantly influence the percentage of light absorbed in the entire device, as well as the graphene layer itself, with graphene absorption exceeding 25% in regions where plasmonic excitation occurs. Notably, the dielectric environment of graphene has a dramatic influence on the strength and wavelength range over which the plasmons can be excited, making dielectric choice paramount to final detector tunability and sensitivity.

Growth of Monolayer Graphene on Nanoscale Copper-Nickel Alloy Thin Films

Growth of high quality and monolayer graphene on copper thin films on silicon wafers is a promising approach to massive and direct graphene device fabrication in spite of the presence of potential dewetting issues in the copper film during graphene growth. Current work demonstrates roles of a nickel adhesion coupled with the copper film resulting in mitigation of dewetting problem as well as uniform monolayer graphene growth over 97 % coverage on films. The feasibility of monolayer graphene growth on Cu-Ni alloy films as thin as 150 nm in total is also demonstrated. During the graphene growth on Cu-Ni films, the nickel adhesion layer uniformly diffuses into the copper thin film resulting in a Cu-Ni alloy, helping to promote graphene nucleation and large area surface coverage. Furthermore, it was found that the use of extremely thin metal catalyst films also constraint the total amount of carbon that can be absorbed into the film during growth, which helps to eliminate adlayer formation and promote monolayer growth regardless of alloying content, thus improving the monolayer fraction of graphene coverage on the thinner films. These results suggest a path forward for the large scale integration of high quality, monolayer graphene into nanoelectronic and nanomechanical devices.

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth

The high-quality graphene film can be grown on single-crystal Cu substrate by seamlessly stitching the aligned graphene domains. The roles of O₂ and H₂ have been intensively studied in the graphene growth kinetics, including lowering the nucleation sites and tailoring the domain structures. However, how the O₂ and H₂ influence Cu orientations during recrystallization prior to growing graphene, still remains unclear. Here we report that the oxidation of Cu surface tends to stabilize the Cu(001) orientation while impedes the evolution of Cu(111) single domain during annealing process. The crystal orientation-controlled synthesis of aligned graphene seeds is further realized on the long-range ordered Cu(111) substrate. With decreasing the thickness of oxide layer on Cu surface by introducing H₂, the Cu(001) orientation changes into Cu(111) orientation. Meanwhile, the average domain size of Cu foils is increased from 50 μm to larger than 1000 μm. The density functional theory calculations reveal that the oxygen increases the energy barrier for Cu(111) surface and makes O/Cu(001) more stable than O/Cu(111) structure. Our work can be helpful for revealing the roles of O₂ and H₂ in controlling the formation of Cu single-crystal substrate as well as in growing high-quality graphene films.

Circular Graphene Platelets with Grain Size and Orientation Gradients Grown by Chemical Vapor Deposition

Monolayer circular graphene platelets with a grain structure gradient in the radial direction are synthesized by chemical vapor deposition on immiscible W-Cu substrates. Because of the different interactions and growth behaviors of graphene on Cu and tungsten carbide, such substrates cause the formation of grain size and orientation gradients through the competition between Cu and tungsten carbide in graphene growth.

Exploring oxygen in graphene chemical vapor deposition synthesis

Graphene's practical applications require its reproducible production with controlled means. In particular, graphene synthesis by chemical vapor deposition on metals has been shown to be a promising way to produce large-size and high-quality graphene film at low cost. Understanding the reaction mechanisms during the synthesis process is vital for process and product controllability. There have been a great deal of studies regarding the mutual interplays between the metal, graphene, and hydrogen in graphene production, leading to significant advances in controllable graphene synthesis. Recently, oxygen has been found to play a key role in each step of graphene synthesis, especially on Cu. Taking oxygen into consideration, one can explain the divergent experimental results under similar conditions reported before and can grasp it as another powerful tool that can help to regulate the synthesis processes. The primary discoveries of the function of oxygen in graphene synthesis are summarized and discussed herein, divided into four aspects, corresponding to the elementary steps in graphene synthesis. Oxygen may also further promote graphene synthesis toward the final goal of developing wafer-scale single crystals with definite layer numbers and defects.

Large, Linear, and Tunable Positive Magnetoresistance of Mechanically Stable Graphene Foam-Toward High-Performance Magnetic Field Sensors

Here, we present the first observation of magneto-transport properties of graphene foam (GF) composed of a few layers in a wide temperature range of 2-300 K. Large room-temperature linear positive magnetoresistance (PMR ≈ 171% at B ≈ 9 T) has been detected. The largest PMR (∼213%) has been achieved at 2 K under a magnetic field of 9 T, which can be tuned by the addition of poly(methyl methacrylate) to the porous structure of the foam. This remarkable magnetoresistance may be the result of quadratic magnetoresistance. The excellent magneto-transport properties of GF open a way toward three-dimensional graphene-based magnetoelectronic devices.

Relationship between the dipole moment of self-assembled monolayers incorporated in graphene transistors and device electrical stabilities

The effects of SAMs on the electrical stabilities of graphene FETs were examined by using various SAMs.

Spatially Controlled Nucleation of Single-Crystal Graphene on Cu Assisted by Stacked Ni

In spite of recent progress of graphene growth using chemical vapor deposition, it is still a challenge to precisely control the nucleation site of graphene for the development of wafer-scale single-crystal graphene. In addition, the postgrowth patterning used for device fabrication deteriorates the quality of graphene. Herein we demonstrate the site-selective nucleation of single-crystal graphene on Cu foil based on spatial control of the local CH₄ concentration by a perforated Ni foil. The catalytically active Ni foil acts as a CH₄ modulator, resulting in millimeter-scale single-crystal grains at desired positions. The perforated Ni foil also allows to synthesize patterned graphene without any postgrowth processing. Furthermore, the uniformity of monolayer graphene is significantly improved when a plain Ni foil is placed below the Cu. Our findings offer a facile and effective way to control the nucleation of high-quality graphene, meeting the requirements of industrial processing.

Are Graphitic Surfaces Hydrophobic?

Graphitic carbons are important solid materials with myriad applications including electrodes, adsorbents, catalyst support, and solid lubricants. Understanding the interaction between water and graphitic carbons is critically important for both fundamental material characterization and practical device fabrication because the water-graphitic interface is essential to many applications. Research interests in graphene and carbon nanotubes over the past decades have brought renewed interest to elucidate wettability of graphitic carbons and understand their interaction with the surrounding environment. Research on this topic can be traced back to the 1940s, and the prevailing notion has been that graphitic carbons are hydrophobic. Though there have been different voices, this conclusion is supported by many previous water contact angle tests and well accepted by the community since sp² carbon is nonpolar in nature. However, recent results from our groups showed that graphitic surfaces are intrinsically mildly hydrophilic and adsorbed hydrocarbon contaminants from the ambient air render the surface hydrophobic. This unexpected finding challenges the long-lasting conception and could completely change the way graphitic materials are made, modeled, and modified. With several other research groups reporting similar findings, it is important for the community to realize the importance of airborne contamination on the surface-related properties of graphitic materials and revisit the intrinsic water-graphite interaction. This Account aims to summarize our recent work on water wettability of graphitic surfaces and discuss future research directions toward understanding the intrinsic water-graphite interaction. Historical perspective will first be provided highlighting the long accepted notion that graphite is hydrophobic along with a few reports suggesting otherwise. Next, our recent experimental data will be presented showing that pristine graphene and graphite are mildly hydrophilic; chemical analysis showed that hydrocarbons adsorb onto the clean surfaces thus rendering them hydrophobic. These results are further rationalized by analyzing the change in surface energy of the graphitic surfaces before and after hydrocarbon contamination. Facile methods to remove hydrocarbons from a contaminated surface will be discussed along with a convenient water treatment method that we developed to inhibit hydrocarbon adsorption onto a pristine graphitic surface. Implications of contamination will be illustrated through comparing the electrochemical activity of pristine and contaminated graphite. Lastly, consequences of these findings and future research directions to address a few important unanswered questions will be discussed.

Cracking of Polycrystalline Graphene on Copper under Tension

Roll-to-roll manufacturing of graphene is attractive because of its compatibility with flexible substrates and its promise of high-speed production. Several prototype roll-to-roll systems have been demonstrated, which produce large-scale graphene on polymer films for transparent conducting film applications.1-4 In spite of such progress, the quality of graphene may be influenced by the tensile forces that are applied during roll-to-roll transfer. To address this issue, we conducted in situ tensile experiments on copper foil coated with graphene grown by chemical vapor deposition, which were carried out in a scanning electron microscope. Channel cracks, which were perpendicular to the loading direction, initiated over the entire graphene monolayer at applied tensile strain levels that were about twice the yield strain of the (annealed) copper. The spacing between the channel cracks decreased with increasing applied strain, and new graphene wrinkles that were parallel to the loading direction appeared. These morphological features were confirmed in more detail by atomic force microscopy. Raman spectroscopy was used to determine the strain in the graphene, which was related to the degradation of the graphene/copper interface. The experimental data allowed the fracture toughness of graphene and interfacial properties of the graphene/copper interface to be extracted based on classical channel crack and shear-lag models. This study not only deepens our understanding of the mechanical and interfacial behavior of graphene on copper but also provides guidelines for the design of roll-to-roll processes for the dry transfer of graphene.

Stranski-Krastanov and Volmer-Weber CVD Growth Regimes To Control the Stacking Order in Bilayer Graphene

Aside from unusual properties of monolayer graphene, bilayer has been shown to have even more interesting physics, in particular allowing bandgap opening with dual gating for proper interlayer symmetry. Such properties, promising for device applications, ignited significant interest in understanding and controlling the growth of bilayer graphene. Here we systematically investigate a broad set of flow rates and relative gas ratio of CH₄ to H₂ in atmospheric pressure chemical vapor deposition of multilayered graphene. Two very different growth windows are identified. For relatively high CH₄ to H₂ ratios, graphene growth is relatively rapid with an initial first full layer forming in seconds upon which new graphene flakes nucleate then grow on top of the first layer. The stacking of these flakes versus the initial graphene layer is mostly turbostratic. This growth mode can be likened to Stranski-Krastanov growth. With relatively low CH₄ to H₂ ratios, growth rates are reduced due to a lower carbon supply rate. In addition bi-, tri-, and few-layer flakes form directly over the Cu substrate as individual islands. Etching studies show that in this growth mode subsequent layers form beneath the first layer presumably through carbon radical intercalation. This growth mode is similar to that found with Volmer-Weber growth and was shown to produce highly oriented AB-stacked materials. These systematic studies provide new insight into bilayer graphene formation and define the synthetic range where gapped bilayer graphene can be reliably produced.

In Situ Graphene Growth Dynamics on Polycrystalline Catalyst Foils

The dynamics of graphene growth on polycrystalline Pt foils during chemical vapor deposition (CVD) are investigated using in situ scanning electron microscopy and complementary structural characterization of the catalyst with electron backscatter diffraction. A general growth model is outlined that considers precursor dissociation, mass transport, and attachment to the edge of a growing domain. We thereby analyze graphene growth dynamics at different length scales and reveal that the rate-limiting step varies throughout the process and across different regions of the catalyst surface, including different facets of an individual graphene domain. The facets that define the domain shapes lie normal to slow growth directions, which are determined by the interfacial mobility when attachment to domain edges is rate-limiting, as well as anisotropy in surface diffusion as diffusion becomes rate-limiting. Our observations and analysis thus reveal that the structure of CVD graphene films is intimately linked to that of the underlying polycrystalline catalyst, with both interfacial mobility and diffusional anisotropy depending on the presence of step edges and grain boundaries. The growth model developed serves as a general framework for understanding and optimizing the growth of 2D materials on polycrystalline catalysts.

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene

Single-crystalline artificial AB-stacked bilayer graphene is formed by aligned transfer of two single-crystalline monolayers on a wafer-scale. The obtained bilayer has a well-defined interface and is electronically equivalent to exfoliated or direct-grown AB-stacked bilayers.

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies.

Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition

Over the past decade, graphene has advanced rapidly as one of the most promising materials changing human life. Development of production-worthy synthetic methodologies for the preparation of various types of graphene forms the basis for its investigation and applications. Graphene can be used in the forms of either microflake powders or large-area thin films. Graphene powders are prepared by the exfoliation of graphite or the reduction of graphene oxide, while graphene films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrates. Both metal and dielectric substrates have been explored; while dielectric substrates are preferred over any other substrate, much higher quality graphene large-area films have been grown on metal substrates such as Cu. The focus here is on the progress of graphene synthesis on Cu foils by CVD, including various CVD techniques, graphene growth mechanisms and kinetics, strategies for synthesizing large-area graphene single crystals, graphene transfer techniques, and, finally, challenges and prospects are discussed.

Modulation of N-bonding configurations and their influence on the electrical properties of nitrogen-doped graphene

Nitrogen-doped graphene (NG) films with controllable doping configuration have been grown on Cu foils by using imidazole (C₃H₄N₂) and PMMA as solid N and C sources.