Perovskite-based photodetectors: materials and devices

Deciphering the Carrier Transport Properties in Two-Dimensional Perovskites via Surface-Enhanced Raman Scattering

2D layered organic-inorganic perovskites have attracted substantial attention due to their high stability and promising optoelectronic properties. However, in-depth insights on the anisotropic carrier transport properties of these 2D perovskites are remaining challenging, while they are significant for further designing the high-performance device applications. Here, the carrier transport properties within 2D perovskite single crystals are investigated and a layered-carrier-transport model is developed through the non-invasive and non-destructive surface-enhanced Raman scattering techniques. The carrier transport features of 2D perovskites show clearly the thickness-, applied voltage- and anisotropy-dependent behaviors, which are demonstrated to origin from the quantum confinement effect. The findings elucidate the carrier transport mechanisms within 2D perovskites from their molecular level through Raman spectroscopy, thus providing a promising way for exploring the photo-physical properties in wide-ranged halide perovskites and designing highly efficient perovskite optoelectronic devices.

Quantum Dot Interface-Mediated CsPbIBr2 Film Growth and Passivation for Efficient Carbon-Based Solar Cells

CsPbIxBry-based all-inorganic perovskite materials are a potential candidate for stable semitransparent and tandem structured photovoltaic devices. However, poor film (morphological and crystalline) quality and interfacial recombination lead consequently to a decline in the photoelectric conversion performance of the applied solar cells. In this work, we incorporated PbS quantum dots (QDs) at the interface of electron transporting layer (ETL) SnO₂ and perovskite to modulate the crystallization of CsPbIBr₂ and the interfacial charge dynamics in carbon-based solar cells. The as-casted PbS QDs behave as seeds for lattice-matching the epitaxial growth of pinhole-free CsPbIBr₂ films. The modified films with reduced defect density exhibit facilitated carrier transfer and suppressed charge recombination at the ETL/perovskite interface, contributing to an enhanced device efficiency from 7.00 to 9.09% and increased reproducibility and ambient stability. This strategic method of QD-assisted lattice-matched epitaxial growth is promising to prepare high-quality perovskite films for efficient perovskite solar cells.

Perovskite photodetectors and their application in artificial photonic synapses

Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.

Chiral Hybrid Perovskite Single-Crystal Nanowire Arrays for High-Performance Circularly Polarized Light Detection

Circularly polarized light (CPL) detection has emerged as a key technology for various optoelectronics. Chiral hybrid perovskites (CHPs) that combine CPL-sensitive absorption induced by chiral organic ligands and superior photoelectric properties of perovskites are promising candidates for direct CPL detection. To date, most of the CHP detectors are made up of polycrystalline thin-film, which results in a rather limited discrimination of CPL due to the existence of redundant impurities and intrinsic defect states originating from rapid crystallization process. Here, it is developed a direct CPL detector with high photocurrent and polarization selectivity based on low-defect CHP single-crystal nanowire arrays. Large-scale CHP nanowires are obtained through a micropillar template-assisted capillary-bridge rise approach. Thanks to the high crystallinity and ordered crystallographic alignment of these arrays, a CPL photodetector with high light on/off ratio of 1.8 × 104 , excellent responsivity of 1.4 A W-1 , and an outstanding anisotropy factor of 0.24 for photocurrent has been achieved. These results would provide useful enlightenment for direct CPL detection in high-performance chiral optoelectronics.

Lead-Free Perovskite Single Crystals: A Brief Review

Lead-free perovskites have received remarkable attention because of their nontoxicity, low-cost fabrication, and spectacular properties including controlled bandgap, long diffusion length of charge carrier, large absorption coefficient, and high photoluminescence quantum yield. Compared with the widely investigated polycrystals, single crystals have advantages of lower trap densities, longer diffusion length of carrier, and extended absorption spectrum due to the lack of grain boundaries, which facilitates their potential in different fields including photodetectors, solar cells, X-ray detectors, light-emitting diodes, and so on. Therefore, numerous research focusing on the novel properties, preparation methods, and remarkable progress in applications of lead-free perovskite single crystals (LFPSCs) has been extensively studied. In this review, the current advancements of LFPSCs are briefly summarized, including the synthesis approaches, compositional and interfacial engineering, and stability of several representative systems of LFPSCs as well as the reported practical applications. Finally, the critical challenges which limit the performance of LFPSCs, and their inspiring prospects for further developments are also discussed.

Light absorption enhancement in ultrathin perovskite solar cells using light scattering of high-index dielectric nanospheres

Arrays of high-index dielectric nanoparticles supporting both electrical and magnetic resonances have gained increasing attention for their excellent light-trapping (LT) effects, thus greatly improving the performance of ultrathin solar cells. This work explores front-located, high-index dielectric subwavelength nanosphere arrays as an efficient and broadband LT structure patterned on top of an ultrathin perovskite solar cell (PSC) for a greatly enhanced absorption. Combined strong light scattering and anti-reflection properties achieved by optimized geometrical parameters of the LT structure lead to a broadband absorption enhancement in the ultrathin thickness of a photoactive layer (100 nm) yielding the short-circuit current density (Jsc) of 18.7 mA/cm², which is 31.7% higher than that of a planar counterpart. Moreover, effects of the LT structure on far-field radiation patterns, scattering cross-sections, multipoles' contributions, and asymmetry parameters along with the incidence angle and polarization dependence are investigated. The present strategy could be applied to diverse applications, such as other ultrathin or semitransparent solar cells, absorbers and photodetectors.

Structure-Composition-Property Relationships in Antiperovskite Nitrides: Guiding a Rational Alloy Design

The alloy strategy through the A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorbers, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antiperovskite alloys are rare. In this work, we investigated the previously overlooked electronic property (e.g., conduction band convergence), static dielectric constant, and exciton binding energy in inorganic antiperovskite nitrides by first-principles calculations. Then, we revealed a linear relationship between the tolerance factor and various physical quantities. Guided by the established structure-composition-property relationship in six antiperovskite nitrides X₃NA (X²⁺ = Mg²⁺, Ca²⁺, Sr²⁺; A^3- = P^3-, As^3-, Sb^3-, Bi^3-), for the first time, we designed a promising antiperovskite alloy Mg₃NAs_0.5Bi_0.5 with a quasi-direct band gap of 1.402 eV. Finally, we made a comprehensive comparison between antiperovskite nitrides and conventional halide perovskites for pointing out the future direction for device applications.

Centimeter-Sized Single Crystal of a One-Dimensional Lead-Free Mixed-Cation Perovskite Ferroelectric for Highly Polarization Sensitive Photodetection

Linear dichroic anisotropic photonic materials are highly attractive due to their great potentials in many applications, which in combination with the ferroelectric properties could broaden their research and applications. However, to date, the linear dichroism conversion phenomenon has not been observed in one-dimensional (1D) large-size single-crystal materials: in particular, lead-free perovskite ferroelectric crystals. Here, we propose a new ferroelectric design strategy: namely, partial organic cation substitution for precisely designing 1D polarization-sensitive perovskite ferroelectrics. As an example, the 1D mixed-cation perovskite ferroelectric (n-propylammonium)(methylammonium)SbBr₅ was synthesized, which exhibits a fascinating ferroelectricity with a notable reversible polarization of 2.9 μC/cm² and a large ferroelectricity-driven polarization ratio of 6.9. Importantly, the single-crystalline photodetectors also exhibit superior optoelectronic anisotropic performances at the paraelectric phase, having a large photoelectric anisotropy ratio (∼35), an excellent polarization-sensitive dichroism ratio (∼1.31), highly sensitive detectivity up to ∼10⁹ Jones, and a fast response rate (∼45/68 μs). This finding provides a significant and effective pathway for the targeted design of new functional lead-free linear dichroic anisotropic photonic ferroelectrics.

Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

With the disadvantages of indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare low-dimensional high-performance optoelectronic devices. In this work, an individual ZnO microwire via Ga-incorproration (ZnO:Ga MW) was employed to prepare a light-emitting/detecting bifunctional heterojunction structure, combined with p-type Si crystal wafer as a hole transporting layer. In a forward-bias regime, red luminescence peaking at around 680 nm was captured. While, the fabricated heterojunction device also exhibited an obvious photoresponse in the ultraviolet wavelengths. Interestingly, the introduction of Ag nanowires (AgNWs) are utilized to increase light output with amplitude 4 times higher than with that of naked wire-based LEDs. Similarly, the performance parameters of the fabricated n-AgNWs@ZnO:Ga MW/p-Si heterojunction photodetector are significantly enhanced, containing a responsivity of 5.52 A W^-1, detectivity of 2.34 × 10¹² Jones, external quantum efficiency of 1.9 × 10³% illuminated under 370 nm at -1 V. We compare this work with previous reported photodetectors based on various ZnO/Si-based materials and structures, some performance parameters are not superior, but our constructed n-AgNWs@ZnO:Ga MW/p-Si heterojunction photodetector has comparable overall characteristics, and our findings stand out especially for providing an inexpensive and suitable pathway for developing low-cost, miniaturized and integrated ultraviolet photodetectors. The demonstration of AgNWs enhanced low-dimensional light-emitting/detecting bifunctional photodiodes can offer a promising scheme to construct high-performance Si-based optoelectronic devices.

Circularly Polarized Photodetectors Based on Chiral Materials: A Review

Circularly polarized light (CPL) plays an important role in many photonic techniques, including tomographic scanning based on circular polarization ellipsometry, optical communication and information of spin, and quantum-based optical calculation and information processing. To fully exploit the functions of CPL in these fields, integrated photoelectric sensors capable of detecting CPL are essential. Photodetectors based on chiral materials can directly detect CPL due to their intrinsic optical activity, without the need to be coupled with polarizers and quarter-wave plates as in conventional photodetectors. This review summarizes the recent research progress in CPL photodetectors based on chiral materials. We first briefly introduce the CPL photodetectors based on different types of chiral materials and their working principles. Finally, current challenges and future opportunities in the development of CPL photodetectors are prospected.

Dramatic Responsivity Enhancement Through Concentrated H2 SO4 Treatment on PEDOT:PSS/TiO2 Heterojunction Fibrous Photodetectors

In order to satisfy the growing requirements of wearable electronic devices, 1D fiber-shaped devices with outstanding sensitivity, flexibility, and stability are urgently needed. In this study, a novel inorganic-organic heterojunction fibrous photodetector (FPD) based on poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and highly ordered TiO₂ nanotube array is fabricated, which endows a high responsivity, large external quantum efficiency, and fast response speed at 3 V bias. To further ameliorate its performance in the self-powered mode, a facile acid treatment is adopted and the assembled H-PEDOT:PSS/TiO₂ FPD demonstrates outstanding self-powered properties with ≈3000% responsivity enhancement (161 mA W^-1 at 0 V under 365 nm irradiation, photocurrent enhancement of ≈50 times) compared with the untreated device. It is found that the concentrated H₂ SO₄ post-treatment helps decrease the tube wall thickness of TiO₂ and partially removes the insulated PSS component in PEDOT:PSS, leading to enhanced conductivity and facilitated charge transportation, and thereby superb responsivity/photocurrent enhancement of self-powered H-PEDOT:PSS/TiO₂ FPD. This low-cost and high-performance self-powered FPD shows high potential for applications in wearable electronic devices.

Self-powered flexible all-perovskite X-ray detectors with high sensitivity and fast response

Perovskite materials have demonstrated superior performance in many aspects of optoelectronic applications including X-ray scintillation, photovoltaic, photodetection, and so on. In this work, we demonstrate a self-powered flexible all-perovskite X-ray detector with high sensitivity and fast response, which can be realized by integrating CsPbBr₃ perovskite nanocrystals (PNCs) as the X-ray scintillator with a CH₃NH₃PbI₃ perovskite photodetector. The PNCs scintillator exhibits ultra-fast light decay of 2.81 ns, while the perovskite photodetector gives a fast response time of ∼0.3 μs and high-specific detectivity of ∼2.4×10¹² Jones. The synergistic effect of these two components ultimately leads to a self-powered flexible all-perovskite X-ray detector that delivers high sensitivity of 600-1,270 μC/mGy_aircm³ under X-ray irradiation and fast radiation-to-current response time.

Embedding of Ti3 C2 Tx Nanocrystals in MAPbI3 Microwires for Improved Responsivity and Detectivity of Photodetector

Organic-inorganic hybrid MAPbI₃ microwires show unique optoelectronic properties for high performances of photodetectors (PDs). However, the defects-assisted nonradiative recombination is harmful for carrier transport, which limits the performances improvement of MAPbI₃ microwires PDs. Traditional organic passivation agents effectively combine the surface defects of microwires and also reduce the mobility of overall film based on the perovskite microwires. Therefore, the improvement of internal carrier transport of microwires and the mobility of integrated film simultaneously is a particular challenge for fabrication of performances enhanced perovskite microwires PDs. Here, the Ti₃ C₂ T_x NCs are fabricated by nonfocus laser irradiation in liquid environment, and hybrids the high conductive NCs in the MAPbI₃ microwires. The presence of Ti₃ C₂ T_x NCs renders defects passivation, enhancement of crystalline orientation, charge transport, and carrier extraction for MAPbI₃ microwires, and boots the mobility of microwires based film, leading to about tenfolds enhancement of performances of PDs than that of the control. The maximum responsivity and the detectivity of the Ti₃ C₂ T_x NCs embedded MAPbI₃ microwires PDs reach to 1.70 A W^-1 and 7.0 × 10¹¹ Jones in visible window, respectively. The findings suggest that the laser generated high conductive Ti₃ C₂ T_x NCs is an effective additive for perovskite microwires to fabricate performances enhanced optoelectronics.

Light Management With Grating Structures in Optoelectronic Devices

Ordered and patterned micro/nanostructure arrays have emerged as powerful platforms for optoelectronic devices due to their unique ordered-dependent optical properties. Among various structures, grating structure is widely applied because of its simple fabrication process, easy adjusting of size and morph, and efficient light trapping. Herein, we summarized recent developments of light management with grating structures in optoelectronic devices. Typical mechanisms about the grating structures in optoelectronic devices have been reviewed. Moreover, the applications of grating structures in various optoelectronic devices have been presented. Meanwhile, the remaining bottlenecks and perspectives for future development have been discussed.

State of the Art and Prospects for Halide Perovskite Nanocrystals

Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.

All-Evaporated, All-Inorganic CsPbI3 Perovskite-Based Devices for Broad-Band Photodetector and Solar Cell Applications

Following the rapid increase of organic metal halide perovskites toward commercial application in thin-film solar cells, inorganic alternatives attracted great interest with their potential of longer device lifetime due to the stability improvement under increased temperatures and moisture ingress. Among them, cesium lead iodide (CsPbI₃) has gained significant attention due to similar electronic and optical properties to methylammonium lead iodide (MAPbI₃), with a band gap of 1.7 eV, high absorption coefficient, and large diffusion length, while also offering the advantage of being completely inorganic, providing a higher thermal stability and preventing material degradation. On a device level, however, it seems also essential to replace organic transport layers by inorganic counterparts to further prevent degradation. In addition, devices are mostly fabricated by spin coating, limiting their reproducibility and scalability; in this case, exploring all-evaporated devices allows us to improve the quality of the layers and to increase their reproducibility. In this work, we focus on the deposition of CsPbI₃ by CsI and PbI₂ co-evaporation. We fabricate devices with an all-inorganic, all-evaporated structure, employing NiO and TiO₂ as transport layers, and evaluate these devices for both photodetector and solar cell applications. As a photodetector, low leakage current, high external quantum efficiency (EQE) and detectivity, and fast rise and decay times were obtained, while as a solar cell, acceptable efficiencies were achieved. These all-inorganic, all-evaporated devices represent one step forward toward higher stability and reproducibility while enabling large area compatibility and easier integration with other circuitry and, in future, the possible commercialization of perovskite-based technology.

Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors

Photodetectors built from conventional bulk materials such as silicon, III-V or II-VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in emerging photodetectors based on perovskite materials driven by the growing demands for uncooled, low-cost, lightweight, and even flexible photodetection technology. Though perovskite has good electrical and optical properties, perovskite-based photodetectors always suffer from nonideal quantum efficiency and high-power consumption. Joint manipulation of electrons and photons in perovskite photodetectors is a promising strategy to improve detection efficiency. In this review, electrical and optical characteristics of typical types of perovskite photodetectors are first summarized. Electrical manipulations of electrons in perovskite photodetectors are discussed. Then, artificial photonic nanostructures for photon manipulations are detailed to improve light absorption efficiency. By reviewing the manipulation of electrons and photons in perovskite photodetectors, this review aims to provide strategies to achieve high-performance photodetectors.

Mid-Infrared Luminescence of the High Stability Perovskite CsPb1-xErxBr3-ZrF4-BaF2-LaF3-AlF3-NaF Fluoride Glass

Perovskites have been studied because of their adjustable wavelength range, high color purity, and wide color gamut. However, they still face some problems such as poor stability and insufficient infrared luminescence. The perovskite glass can improve the stability and luminescence properties of the perovskite. In this paper, a highly stable CsPb_1-xEr_xBr₃-ZBLAN fluoride glass with mid-infrared and visible light emission was prepared. The ZBLAN fluoride glass has good inertness, which can improve the stability of the CsPb_1-xEr_xBr₃ perovskite. The CsPb_1-xEr_xBr₃-ZBLAN fluoride glass can prevent the perovskite from being destroyed by water, oxygen, and laser. The Er³⁺ replaces Pb²⁺ to bond with Br^- to become the luminescent center of the CsPb_1-xEr_xBr₃-ZBLAN perovskite glass, which extends the luminescence to the mid-infrared region. In addition, its luminescent intensity is significantly higher than those of the ZBLAN-Er glass and CsPb_1-xEr_xBr₃ perovskite. After irradiation with a 365 nm UV lamp for 13 h, the luminescence intensity of the CsPb_1-xEr_xBr₃-ZBLAN perovskite glass decreases only by 10%. The EDS spectrum shows that the elements of the CsPb_1-xEr_xBr₃ perovskite are uniformly distributed in the glass matrix. The X-ray diffraction spectrum shows that the sample has both the CsPb_1-xEr_xBr₃ perovskite phase and the glass phase. This indicates that CsPb_1-xEr_xBr₃ is well crystallized in the ZBLAN glass matrix. The three parameters calculated by the Judd-Ofelt theory show that the CsPb_1-xEr_xBr₃ perovskite can increase the covalency and asymmetry around the rare earth ion Er³⁺. The transmission electron microscope can clearly see the morphological structure of the CsPb_1-xEr_xBr₃ perovskite in the ZBLAN glass matrix. The infrared Fourier transform spectroscopy shows that the sample has lower phonon energy. This proves that the sample has good infrared luminescence characteristics. Finally, the visible and infrared light sources were prepared. Under the irradiation of the 365 nm ultraviolet lamp and 980 nm laser, the perovskite glass produces green light and infrared emission.

Ultrahigh stable lead halide perovskite nanocrystals as bright fluorescent label for the visualization of latent fingerprints

Fingerprints formed by the raised papillary ridges are one of the most important markers for individual identification. However, the current visualization methods for latent fingerprints (LFPs) suffer from poor resolution, low contrast, and high toxicity. In this work, the CsPbBr₃/Cs₄PbBr₆nanostructured composite crystal (CsPbBr₃/Cs₄PbBr₆NCC) were synthesized via a simple chemical solvent-assisted method. Compared with conventional perovskites, the as-prepared CsPbBr₃/Cs₄PbBr₆NCC present an outstanding long-term environmental and water stability with 42% and 80% photoluminescence intensity remaining after 28 d under water and air conditions, respectively. Moreover, a special response to biomolecules from fingerprints was observed due to the hydrophobic interactions between the CsPbBr₃/Cs₄PbBr₆NCC surface hydrophobic ligands (oleyl amine and oleic acid) and the hydrophobic groups in the biomolecules from the human fingers. Clear LFPs images were visualized in a bright environment illuminating the prepared CsPbBr₃/Cs₄PbBr₆NCC powder under UV light of wavelength 365 nm. The images were also obtained on porous and non-porous surfaces such as metal, plastic, wood, glass, and paper products. These perovskite nanocrystals are expected a stable and bright luminescent labeling agent for LFPs visualization and have potential application in crime scene and personal identifications.

UV-vis/X-ray/thermo-induced synthesis and UV-SWIR photoresponsive property of a mixed-valence viologen molybdate semiconductor

A new design strategy through the synergy of Mo(vi)-Mo(v) intervalence charge transfer and π(radical)-π(radical/cation) interactions is proposed to obtain semiconductors with photoresponsive ranges covering the whole UV-SWIR (ultraviolet-shortwave near-infrared; ca. 250-3000 nm) region. With this strategy, a viologen-based molybdate semiconductor with a UV-SWIR photoresponsive range was obtained through UV/X-ray irradiation or thermal annealing. The thermally annealed semiconductor has the highest conversion and the best photocurrent response in the range of 355-2400 nm.

High-Performance Flexible Self-Powered Photodetectors Utilizing Spontaneous Electron and Hole Separation in Quasi-2D Halide Perovskites

Although there are recent advances in many areas of quasi-2D halide perovskites, photodetectors based on these materials still cannot achieve satisfactory performance for practical applications where high responsivity, fast response, self-powered nature, and excellent mechanical flexibility are urgently desired. Herein, utilizing one-step spin-coating method, self-assemble quasi-2D perovskite films with graded phase distribution in the order of increasing number of metal halide octahedral layers are successfully prepared. Gradient type-II band alignments along the out-of-plane direction of perovskites with spontaneous separation of photo-generated electrons and holes are obtained and then employed to construct self-powered vertical-structure photodetectors for the first time. Without any driving voltage, the device exhibits impressive performance with the responsivity up to 444 mA W^-1 and ultrashort response time down to 52 µs. With a bias voltage of 1.5 V, the device responsivity becomes 3463 mA W^-1 with the response speed as fast as 24 µs. Importantly, the device's mechanical flexibility is greatly enhanced since the photocurrent prefers flowing through the metal halide octahedral layers between the top and bottom contact electrodes in the vertical device structure, being more tolerant to film damage. These results evidently indicate the potential of graded quasi-2D perovskite phases for next-generation optoelectronic devices.

Broadband Detection of X-ray, Ultraviolet, and Near-Infrared Photons using Solution-Processed Perovskite-Lanthanide Nanotransducers

Solution-processed metal-halide perovskites hold great promise in developing next-generation low-cost, high-performance photodetectors. However, the weak absorption of perovskites beyond the near-infrared spectral region posts a stringent limitation on their use for broadband photodetectors. Here, the rational design and synthesis of an upconversion nanoparticles (UCNPs)-perovskite nanotransducer are presented, namely UCNPs@mSiO₂ @MAPbX₃ (X = Cl, Br, or I), for broadband photon detection spanning from X-rays, UV, to NIR. It is demonstrated that, by in situ crystallization and deliberately tuning the material composition in the lanthanide core and perovskites, the nanotransducers allow for a high stability and show a wide linear response to X-rays of various dose rates, as well as UV/NIR photons of various power densities. The findings provide an opportunity to explore the next-generation broadband photodetectors in the field of high-quality imaging and optoelectronic devices.

High-Stability Flexible X-ray Detectors Based on Lead-Free Halide Perovskite Cs2TeI6 Films

Normal flat panel X-ray detectors are confined in imaging of curved surfaces and three-dimensional objects. Except that, their rigid panels provide uncomfortable user experience in medical diagnosis. Here, we report a flexible X-ray detector fabricated by the combination of a lead-free Cs₂TeI₆ perovskite film and a polyimide (PI) substrate. High-quality Cs₂TeI₆ polycrystalline films are prepared by a low-temperature electrospraying method. The resistivity even remained at the level of 10¹¹ Ω·cm after 100 cycles of bending tests with a low bending radius of 10 mm. The resulting flexible Cs₂TeI₆ detectors exhibit better response stability than those based on rigid SnO₂:F glass (FTO), which is attributed to the superior crystallization of films and the growth stress relief of flexible substrates. Furthermore, an X-ray sensitivity of 76.27 μC·Gy_air^-1·cm^-2 and a detection limit of 0.17 μGy_air·s^-1 are achieved. A series of distortion-free clear X-ray images are obtained for objects with different materials and densities. These findings provide insights into flexible X-ray detectors based on perovskite films and motivate research in wearable X-ray detectors for medical radiography and dose monitoring.

Recent advances toward environment-friendly photodetectors based on lead-free metal halide perovskites and perovskite derivatives

Recently, metal-halide perovskites have emerged as promising materials for photodetector (PD) applications owing to their superior optoelectronic properties, such as ambipolar charge transport characteristics, high carrier mobility, and so on. In the past few years, rapid progress in lead-based perovskite PDs has been witnessed. However, the critical environmental instability and lead-toxicity seriously hinder their further applications and commercialization. Therefore, searching for environmentally stable and lead-free halide perovskites (LFHPs) to address the above hurdles is certainly a worthwhile subject. In this review, we present a comprehensive overview of currently explored LFHPs with an emphasis on their crystal structures, optoelectronic properties, synthesis and modification methods, as well as the PD applications. LFHPs are classified into four categories according to the replacement strategies of Pb²⁺, including AB(ii)X₃, A₃B(iii)₂X₉, A₂B(i)B(iii)'X₆, and newly-emerging perovskite derivatives. Then, we give a demonstration of the preliminary achievements and limitations in environment-friendly PDs based on such LFHPs and perovskite derivatives, and also discuss their applications in biological synapses, imaging, and X-ray detection. With the perspective of their properties and current challenges, we provide an outlook for future directions in this rapidly evolving field to achieve high-quality LFHPs and perovskite derivatives for a broader range of fundamental research and practical applications.

Recent Progress of Flexible Image Sensors for Biomedical Applications

Flexible image sensors have attracted increasing attention as new imaging devices owing to their lightness, softness, and bendability. Since light can measure inside information from outside of the body, optical-imaging-based approaches, such as X-rays, are widely used for disease diagnosis in hospitals. Unlike conventional sensors, flexible image sensors are soft and can be directly attached to a curved surface, such as the skin, for continuous measurement of biometric information with high accuracy. Therefore, they are expected to gain wide application to wearable devices, as well as home medical care. Herein, the application of such sensors to the biomedical field is introduced. First, their individual components, photosensors, and switching elements, are explained. Then, the basic parameters used to evaluate the performance of each of these elements and the image sensors are described. Finally, examples of measuring the dynamic and static biometric information using flexible image sensors, together with relevant real-world measurement cases, are presented. Furthermore, recent applications of the flexible image sensors in the biomedical field are introduced.

Recent Advances in Perovskite Photodetectors for Image Sensing

In recent years, metal halide perovskites have been widely investigated to fabricate photodetectors for image sensing due to the excellent photoelectric performance, tunable bandgap, and low-cost solution preparation process. In this review, a comprehensive overview of the recent advances in perovskite photodetectors for image sensing is provided. First, the key performance parameters and the basic device types of photodetectors are briefly introduced. Then, the recent developments of image sensors on the basis of different dimensional perovskite materials, including 0D, 1D, 2D, and 3D perovskite materials, are highlighted. Besides the device structures and photoelectric properties of perovskite image sensors, the preparation methods of perovskite photodetector arrays are also analyzed. Subsequently, the single-pixel imaging of perovskite photodetectors and the strategies to fabricate narrowband perovskite photodetectors for color discrimination are discussed. Finally, the potential challenges and possible solutions for the future development of perovskite image sensors are presented.

Perovskite random lasers: a tunable coherent light source for emerging applications

Metal halide perovskites have attracted increasing attention due to their superior optical and electrical characteristics, flexible tunability, and easy fabrication processes. Apart from their unprecedented successes in photovoltaic devices, lasing action is the latest exploitation of the optoelectronic performance of perovskites. Among the substantial body of research on the configuration design and light emission quality of perovskite lasers, the random laser is a very interesting stimulated emission phenomenon with unique optical characteristics. In this review article, we first comprehensively overview the development of perovskite-based optoelectronic devices and then focus our discussion on random lasing performance. After an introduction to the historical development of versatile random lasers and perovskite random lasers, we summarize several synthesis methods and discuss their material configurations and stability in synthesized perovskite materials. Following this, a theoretical approach is provided to explain the random lasing mechanism in metal halide perovskites. Finally, we propose future applications of perovskite random lasers, presenting conclusions as well as future challenges, such as quality stability and toxicity reduction, of perovskite materials with regard to practical applications in this promising field.

Revealing the Exciton Fine Structure in Lead Halide Perovskite Nanocrystals

Lead-halide perovskite nanocrystals (NCs) are attractive nano-building blocks for photovoltaics and optoelectronic devices as well as quantum light sources. Such developments require a better knowledge of the fundamental electronic and optical properties of the band-edge exciton, whose fine structure has long been debated. In this review, we give an overview of recent magneto-optical spectroscopic studies revealing the entire excitonic fine structure and relaxation mechanisms in these materials, using a single-NC approach to get rid of their inhomogeneities in morphology and crystal structure. We highlight the prominent role of the electron-hole exchange interaction in the order and splitting of the bright triplet and dark singlet exciton sublevels and discuss the effects of size, shape anisotropy and dielectric screening on the fine structure. The spectral and temporal manifestations of thermal mixing between bright and dark excitons allows extracting the specific nature and strength of the exciton–phonon coupling, which provides an explanation for their remarkably bright photoluminescence at low temperature although the ground exciton state is optically inactive. We also decipher the spectroscopic characteristics of other charge complexes whose recombination contributes to photoluminescence. With the rich knowledge gained from these experiments, we provide some perspectives on perovskite NCs as quantum light sources.

Broadband Photoresponsive Bismuth Halide Hybrid Semiconductors Built with π-Stacked Photoactive Polycyclic Viologen

Photoresponse ranges of commercially prevailing photoelectric semiconductors, typically Si and InGaAs, are far from fully covering the whole solar spectrum (∼295-2500 nm), resulting in insufficient solar energy conversion or narrow wave bands for photoelectric detection. Recent studies have shown that infinite π-aggregation of viologen radicals can provide semiconductors with a photoelectric response range covering the solar spectrum. However, controlled assembly of an infinite π-aggregate is still a great challenge in material design. Through directional self-assembly of electron-transfer photoactive polycyclic ligands, two crystalline inorganic-organic hybrid photochromic viologen-based bismuth halide semiconductors, ((Me)₃pytpy)[BiCl₆]·2H₂O [1; (Me)₃pytpy = N,N',N″-trimethyl-2,4,6-tris(4-pyridyl)pyridine] and ((Me)₃pytpy)[Bi₂Cl₉]·H₂O (2), have been synthesized. They represent the first series of pytpy-based photochromic compounds. After photoinduced coloration, the conductivities of both 1 and 2 increased. The radical products have electron absorption bands in the range of 200-1600 nm, exceeding that of Si. Both the conductivity and the photocurrent intensity of 2 are stronger than those of 1, due to better planarity, tighter π-stacking, and higher degrees of overlap of ((Me)₃pytpy)³⁺ cations. This study not only provides a new design idea for synthesizing radical-based multispectral photoelectric semiconductors but also enriches the family of electron-transfer photochromic compounds.

Enhanced Weak-Light Detection of Perovskite Photodetectors through Perovskite/Hole-Transport Material Interface Treatment

Enhancement in weak-light detection and other photodetection properties was observed for organic-inorganic halide perovskite photodetectors as a result of benzylammonium iodide (BzAI) treatment at the methylammonium lead triiodide (MAPbI₃) and hole-transport layer (HTL) interface. After treatment, growth of the two-dimensional Ruddlesden-Popper perovskite phase was observed at the MAPbI₃ surface, which shifted the overall surface work function upwards and thus effectively facilitated charge transfer across the MAPbI₃/HTL interface. As a result, the fully fabricated device with 10 mg/mL (BzAI/isopropanol) treatment exhibited shorter rise time (t_rise) and decay time (t_decay) of 53 and 38 μs, respectively, compared to t_rise and t_decay of 214 and 120 μs, respectively, for the pristine MAPbI₃ sample. In addition, the BzAI-treated device exhibited larger linearity compared to the pristine MAPbI₃ sample, demonstrating a high and stable specific detectivity of 1.49 × 10¹³ to 2.14 × 10¹³ Jones under incident light intensity of 10^-3 to 10⁰ mW/cm², respectively.

Metal Halide Perovskite/2D Material Heterostructures: Syntheses and Applications

The past decade has witnessed the great success achieved by metal halide perovskites (MHPs) in photovoltaic and related fields. However, challenges still remain in further improving their performance, as well as, settling the stability issue for future commercialization. Recently, MHP/2D material heterostructures that combining MHPs with the low-cost and solution-processable 2D materials have demonstrated unprecedented improvement in both performance and stability due to the distinctive features at hetero-interface. The diverse fabrication techniques of MHPs and 2D materials allow them to be assembled as heterostructures with different configurations in a variety of ways. Moreover, the large families of MHPs and 2D materials provide the opportunity for the rational design and modification on compositions and functionalities of MHP/2D materials heterostructures. Herein, a comprehensive review of MHP/2D material heterostructures from syntheses to applications is presented. First, various fabrication techniques for MHP/2D material heterostructures are introduced by classifying them into solid-state methods and solution-processed methods. Then the applications of MHP/2D heterostructures in various fields including photodetectors, solar cells, and photocatalysis are summarized in detail. Finally, current challenges for the development of MHP/2D material heterostructures are highlighted, and future opportunities for the advancements in this research field are also provided.

Fabrication of Addressable Perovskite Film Arrays for High-Performance Photodetection and Real-Time Image Sensing Application

Patterned growth of periodic perovskite film arrays is essential for application in sensing devices and integrated optoelectronic systems. Herein, we report on patterned growth of addressable perovskite photodetector arrays through an uncured polydimethylsiloxane (PDMS) oligomer-assisted solution-processed approach, in which a periodic hydrophilic/hydrophobic substrate replicating the predesigned patterns of the PDMS stamp was formed due to the migration of uncured siloxane oligomers in the PDMS stamp to the intimately contacted substrate. By using this technique, MAPbI₃ film photodetector arrays with neglectable pixel-to-pixel variation, a responsivity of 2.83 A W^-1, specific detectivity of 5.4 × 10¹² Jones, and fast response speed of 52.7/57.1 μs (response/recovery time) were achieved. An 8 × 8 addressable photodetector array was further fabricated, which functioned well as a real-time image sensor with reasonable spatial resolution. It is believed that the proposed strategy will find potential application in large-scale fabrication of other photodetector arrays, which might be potentially important for future integrated optoelectronic devices.

Gentle Materials Need Gentle Fabrication: Encapsulation of Perovskites by Gas-Phase Alumina Deposition

Metal halide perovskites have attracted tremendous attention as promising materials for future-generation optoelectronic devices. Despite their outstanding optical and transport properties, the lack of environmental and operational stability remains a major practical challenge. One of the promising stabilization avenues is metal oxide encapsulation via atomic layer deposition (ALD); however, the unavoidable reaction of metal precursors with the perovskite surface in conventional ALD leads to degradation and restructuring of the perovskites' surfaces. This Perspective highlights the development of a modified gas-phase ALD technique for alumina encapsulation that not only prevents perovskites' degradation but also significantly improves their optical properties and air stability. The correlation between precise atomic interactions at the perovskite-metal oxide interface with the dramatically enhanced optical properties is supported by density functional theory calculations, which also underlines the widespread applicability of this gentle technique for a variety of perovskite nanostructures unbarring potential opportunities offered by combination of these approaches.

Ultrathin and Conformable Lead Halide Perovskite Photodetector Arrays for Potential Application in Retina-Like Vision Sensing

Solution-processed lead halide perovskites are considered one of the promising materials for flexible optoelectronics. However, the array integration of ultrathin flexible perovskite photodetectors (PDs) remains a significant challenge limited by the incompatibility of perovskite materials with manufacturing techniques involving polar liquids. Here, an ultrathin (2.4 µm) and conformable perovskite-based PD array (10 × 10 pixels) with ultralight weight (3.12 g m^-2 ) and excellent flexibility, is reported. Patterned all-inorganic CsPbBr₃ perovskite films with precise pixel position, controllable morphology, and homogenous dimension, are synthesized by a vacuum-assisted drop-casting patterning process as the active layer. The use of waterproof parylene-C film as substrate and encapsulation layer effectively protects the perovskite films against penetration of polar liquids during the peeling-off process. Benefitting from the encapsulation and ultrathin property, the device exhibits long-term stability in the ambient environment, and robust mechanical stability under bending or 50% compressive strain. More importantly, the ultrathin flexible PD arrays conforming to hemispherical support realize imaging of light distribution, indicating the potential applications in retina-like vision sensing.

Polarization-Sensitive Halide Perovskites for Polarized Luminescence and Detection: Recent Advances and Perspectives

While halide perovskites (HPs) have achieved enormous success in the field of optoelectronic applications, much attention has been recently drawn to the unique polarization sensitivity of HPs, either intrinsic or extrinsic, which makes HPs a potential candidate for innovative applications in directly polarized luminescence and detection. Herein, the research status in the field of polarization-sensitive HPs, including linear polarization and circular polarization, is comprehensively summarized. To evaluate the effectiveness of HPs in generating and detecting linearly or circularly polarized light, the principles and characterization methods of polarized luminescence and detection are introduced. Sequentially, the state-of-the-art development of the strategies that induce the linear or circular polarization characteristics of HPs is systematically reviewed, based on which the application of polarization-sensitive HPs in the field of polarization luminescence and detection are summarized. Moreover, the current challenges and opportunities are discussed, and prospects of the future development in this promising field are outlined.

All-in-one: a new approach toward robust and solution-processable copper halide hybrid semiconductors by integrating covalent, coordinate and ionic bonds in their structures

Conventional inorganic semiconductors are best known for their superior physical properties and chemical robustness, and their widespread use in optoelectronic devices. However, implementation of these materials in many other applications has been hindered by their poor solubility and/or solution-processability, a longstanding drawback that is largely responsible for issues such as high cost. While recent progress on hybrid perovskites, an important class of inorganic-organic hybrid materials, has shed light on the development of high-performance solution processable semiconductors, they rely heavily on toxic metals and generally suffer from framework instability. To address these issues, a new group of hybrid semiconductors based on anionic copper(i) halide and cationic organic ligands has been developed. These compounds are noted as All-In-One (AIO) structures as they consist of covalently bonded anionic CuX inorganic modules that form both coordinate and ionic bonds with cationic organic ligands. Studies demonstrate that framework stability and solution processibility of these materials are greatly enhanced as a result of such bonds. In the perspective, we highlight the development of this newly emerged type of materials including their crystal structures, chemical and physical properties and possible applications. The untapped potential that the AIO approach can offer for other hybrid families is also discussed.

Polyhydroxy Ester Stabilized Perovskite for Low Noise and Large Linear Dynamic Range of Self-Powered Photodetectors

Solution-processed perovskites as emerging semiconductors have achieved unprecedented milestones in sensor optoelectric devices. Stability along with the device noise issues are the major obstacle for photodetectors to compete with the traditional devices. Here, we demonstrated that l-ascorbic acid (l-AA) as a polyhydroxy ester can coordinate with the amino group of formamidine cations (FA⁺) through multiple hydrogen bond interactions to stabilize the perovskite, which protect the FA⁺ ions from nucleophile attack and effectively suppress the degradation of FA⁺ ions, improving the perovskite stability and suppressing the device noise to below 0.3 pA Hz^-1/2 with a large linear dynamic range of 239 dB. The dual functions of l-AA enable the perovskite photodetector to have a high detectivity of 10¹² Jones. The self-powered device works with no energy consumption and maintains an undegraded performance over 1200 h of inspection at ambient conditions, which is promising for infrastructure construction, signal sensing, and real-time information delivery.

The Opto-Electronic Functional Devices Based on Three-Dimensional Lead Halide Perovskites

These days, opto-electronic functional devices based on three-dimensional lead halide perovskites (LHPs) are emerging. LHPs could be spin-coated to other materials, making it very convenient to combine LHPs with different categories of materials including metals, semiconductors, and polymers and achieve high-level performances. In this review, we will discuss the development in the LHP-based functional devices in recent years. After a brief presentation of the LHP’s properties, we will focus on the functional devices including lasers, photodetectors, and modulators. Then the fabrication of the LHP-based devices will be presented, which is followed by the summary and outlook.

Low-Dimensional Metal Halide Perovskite Photodetectors

Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Study on thickness-dependence characteristics of bismuth ferrite (BFO) for ultraviolet (UV) photodetector application

The present research work reports on the fabrication of ultraviolet (UV) photodetectors using bismuth ferrite (BiFeO3, BFO) thin films with varying thickness. Using the spray pyrolysis technique, BFO thin films were deposited on the glass substrate at 673 K. The deposited BFO thin films were characterized by Raman and FTIR spectroscopic analysis. The morphological analysis reveals uniform grain distribution for the prepared BFO samples. The optical analysis reveals that transmittance value decreases upon an increase in the thickness of BFO thin films and the calculated optical band gap value lies between 2.0 to 2.3 eV. The varying thickness of the BFO active layer was stacked between ITO and Al electrodes and the current–voltage (I–V) characteristics of the fabricated ITO/BFO/Al devices were studied under dark and UV illumination (λ = 365 nm). It was observed that BFO with an optimum thickness (365 nm) exhibits higher photoresponsivity of 110 mA/W with an external quantum efficiency (EQE) of 37.30%. The impact of different thickness of the BFO active layer, the role of adsorption and desorption of oxygen (O2) molecules upon the surface of BFO layers towards UV photoresponse characteristics were investigated.

Self-Driven Perovskite Narrowband Photodetectors with Tunable Spectral Responses

Narrowband photodetectors with tunable spectral responses are highly desirable for applications in image sensing, machine vision, and optical communication. Herein, a filterless and self-driven perovskite narrowband photodetector (PNPD) based on the defect-assisted charge collection narrowing (CCN) mechanism is reported, which is enabled by a high-quality thick perovskite film. By adjusting the halide component of the perovskite layer, the bandgap is successfully modulated and the corresponding narrowband photodetectors show a wide spectral response range from the red to the near-infrared (NIR), all with full-widths at half maximum (FWHMs) below 30 nm. Specifically, the methylammonium lead iodide (MAPbI₃ ) narrowband photodetector exhibits a characteristic detection peak at 800 nm with a very low noise current of ≈0.02 pA Hz^-1/2 , a high specific detectivity up to 1.27 × 10¹² Jones, and a fast response speed with rise/fall time of 12.7/6.9 µs. Impressively, these values are among the highest of their kind reported previously, and allow demonstration of narrowband imaging. The excellent performance of self-driven PNPDs lights up their prospect in high-efficiency optoelectronic devices without external power sources.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Effects of 5-Ammonium Valeric Acid Iodide as Additive on Methyl Ammonium Lead Iodide Perovskite Solar Cells

During the past decade, the power conversion efficiency (PCE) of perovskite solar cells (PSCs) has risen rapidly, and it now approaches the record for single crystal silicon solar cells. However, these devices still suffer from a problem of stability. To improve PSC stability, two approaches have been notably developed: the use of additives and/or post-treatments that can strengthen perovskite structures and the use of a nontypical architecture where three mesoporous layers, including a porous carbon backcontact without hole transporting layer, are employed. This paper focuses on 5-ammonium valeric acid iodide (5-AVAI or AVA) as an additive in methylammonium lead iodide (MAPI). By combining scanning electron microscopy (SEM), X-ray diffraction (XRD), time-resolved photoluminescence (TRPL), current–voltage measurements, ideality factor determination, and in-depth electrical impedance spectroscopy (EIS) investigations on various layers stacks structures, we discriminated the effects of a mesoscopic scaffold and an AVA additive. The AVA additive was found to decrease the bulk defects in perovskite (PVK) and boost the PVK resistance to moisture. The triple mesoporous structure was detrimental for the defects, but it improved the stability against humidity. On standard architecture, the PCE is 16.9% with the AVA additive instead of 18.1% for the control. A high stability of TiO₂/ZrO₂/carbon/perovskite cells was found due to both AVA and the protection by the all-inorganic scaffold. These cells achieved a PCE of 14.4% in the present work.

High-performance perovskite photodetectors based on CH3NH3PbBr3 quantum dot/TiO2 heterojunction

Organo-lead halide perovskite materials have opened up a great opportunity to develop high performance photodetectors because of their superior optoelectronic properties. The main issue with perovskite-only photodetector is severe carrier recombination. Integration of perovskite with high-conductive materials such as graphene or transition metal sulfides certainly improved the photoresponsivity. However, achieving high overall performance remains a challenge. Here, an improved photodetector is constructed by perovskite quantum dots (QDs) and atomic layer deposited ultrathin TiO2 films. The designed CH3NH3PbBr3 QD/TiO2 bilayer device displays inclusive performance with on/off ratio of 6.3 × 102, responsivity of 85 A W-1, and rise/decay time of 0.09/0.11 s. Furthermore, we demonstrate that interface plays a crucial role in determining the device current and enhance the overall performance of heterostructure photodetector through interface engineering. We believe that this work can provide a strategy to accelerate development of high-performance solution-processed perovskite photodetectors.

Enhanced Spin-Orbit Coupled Photoluminescence of Perovskite CsPbBr3 Quantum Dots by Piezo-Phototronic Effect

Piezo-phototronic effect is a fundamental effect of semiconductors lacking of central symmetry with geometries from one-dimensional (1D) nanowire to 3D bulk. Here, we present that the piezo-phototronic effect can even tune a spin-orbit coupled photoluminescence (PL) based on all-inorganic perovskite CsPbBr₃ quantum dots (QDs). Although the cubic structure of CsPbBr₃ QDs is nonpiezoelectric, a cooling treatment can change it to an orthorhombic structure, which is proven to possess a piezoelectric property. The spin-orbit coupled PL intensity is demonstrated to be dependent on the polarization of the excited light. Because of the manipulation of the spin-split energy levels via the piezo-phototronic effect, the spin-orbit coupled PL intensities under a -0.9% compressive strain for linearly and circularly polarized light excitations can be enhanced by 136% and 146%, respectively. These findings reveal fundamental understandings of the spin-orbit coupled PL dynamics and demonstrate promising optoelectronic applications of the piezo-phototronic effect in these QDs.

Enhanced Performance of Perovskite Single-Crystal Photodiodes by Epitaxial Hole Blocking Layer

Introducing hole/electron transporting and blocking layers is considered to enhance the performance of electronic devices based on organic-inorganic hybrid halide perovskite single crystals (PSCs). In many photodiodes, the hole/electron transporting or blocking materials are spin-coated or thermal-evaporated on PSC to fabricate heterojunctions. However, the heterojunction interfaces due to lattice mismatch between hole/electron, transporting or blocking materials and perovskites easily form traps and cracks, which cause noise and leakage current. Besides, these low-mobility transporting layers increase the difficulty of transporting carriers generated by photons to the electrode; hence, they also increase the response time for photo detection. In the present study, MAPbCl₃-MAPbBr_2.5Cl_0.5 heterojunction interfaces were realized by liquid-phase epitaxy, in which MAPbBr_2.5Cl_0.5 PSC acts as an active layer and MAPbCl₃ PSC acts as a hole blocking layer (HBL). Our PIN photodiodes with epitaxial MAPbCl₃ PSC as HBL show better performance in dark current, light responsivity, stability, and response time than the photodiodes with spin-coated organic PCBM as HBL. These results suggest that the heterojunction interface formed between two bulk PSCs with different halide compositions by epitaxy growth is very useful for effectively blocking the injected charges under high external electric field, which could improve the collection of photo-generated carriers and hereby enhance the detection performance of the photodiode. Furthermore, the PIN photodiodes made of PSC with epitaxial HBL show the sensitivities of 7.08 mC Gy_air ^-1 cm^-2, 4.04 mC Gy_air ^-1 cm^-2, and 2.38 mC Gy_air ^-1 cm^-2 for 40-keV, 60-keV, and 80-keV X-ray, respectively.