Plasmonic hot electron induced structural phase transition in a MoS2 monolayer

Energy/Electron Transfer Switch for Controlling Optical Properties of Silicon Quantum Dots

The superior optical properties of Silicon Quantum Dots (SQDs) have made them of increasing interest for a variety of biological and opto-electronic applications. The surface functionalization of the SQDs with aromatic ligands plays a key role in controlling their optical properties due to the interaction of the ligands with the electronic wave function of SQDs. However, there is limited reports in literature describing the impact of spacer groups connecting the aromatic chromophore to SQDs on the optical properties of the SQDs. Herein, we report the synthesis of two SQDs assemblies (1.6 nm average diameter) functionalized with perylene-3,4,9,10-tetracarboxylic acid diimide (PDI) chromophore through N-propylurea and propylamine spacers. Depending on the nature of the spacer, the photophysical measurements provide clear evidence for efficient energy and/or electron transfer between the SQDs and PDI. Energy transfer was confirmed to be the operative process when propylurea spacer was used, in which the rate was estimated to be ~2 × 109 s-1. On the other hand, the propylamine spacer was found to facilitate electron transfer process within the SQDs assembly. To illustrate functionality, the water soluble SQD-N-propylurea-PDI assembly was proven to be nontoxic and efficient for fluorescent imaging of embryonic kidney HEK293 cells and human bone cancerous U2OS cells.

Largely enhanced photocatalytic hydrogen production rate of CdS/(Au-ReS2) nanospheres by the dielectric-plasmon hybrid antenna effect

In this study, we synthesized CdS/(Au-ReS₂) nanospheres that have highly efficient photocatalytic hydrogen production activity induced by dielectric-plasmon hybrid antenna resonance. As the diameter (D) of ReS₂ nanospheres consisting of 2D nanosheets increases from 114 ± 11 to 218 ± 25 nm, the resonance wavelength of the ReS₂ dielectric antenna is tuned from 380 to 620 nm and the hydrogen production rate for the CdS/(Au-ReS₂) nanospheres increases by more than 1.85 times and reaches a value as high as 3060 μmol g^-1 h^-1, with a 9% weight percentage of Au. Due to the enhancements of the local electromagnetic field and excitation energy transfer by the ReS₂-Au dielectric-plasmon hybrid antenna, the hydrogen production rate for the CdS/(Au-ReS₂) nanospheres (D = 218 ± 25 nm) is 797, 319, 105 and 12 times larger than that for pure ReS₂, Au-ReS₂, CdS, and CdS-ReS₂, respectively. Additionally, the persistence and reusability measurements indicate a favorable stability of CdS/(Au-ReS₂). These results provide a strategy to prepare a new class of dielectric-plasmon hybrid antennas consisting of 2D materials and metal nanoparticles, which have promise in applications ranging from photocatalysis to nonlinear optics.

Light-Emitting Plexciton: Exploiting Plasmon-Exciton Interaction in the Intermediate Coupling Regime

The interaction between plasmons in metal nanostructures and excitons in layered materials attracts recent interests due to its fascinating properties inherited from the two constituents, e.g., the high tunability on its spectral or spatial properties from the plasmonic component, and the large optical nonlinearity or light emitting properties from the excitonic counterpart. Here, we demonstrate light-emitting plexcitons from the coupling between the neutral excitons in monolayer WSe₂ and highly confined nanocavity plasmons in the nanocube-over-mirror system. We observe, simultaneously, an anticrossing dispersion curve of the hybrid system in the dark-field scattering spectrum and a 1700 times enhancement in the photoluminescence. We attribute the large photoluminescence enhancement to the increased local density of states by both the plasmonic and excitonic constituents in the intermediate coupling regime. In addition, increasing the confinement of the hybrid systems is achieved by shrinking down the size of the hot spot within the gap between the nanocube and the metal film. Numerical calculations reproduce the experimental observations and provide the effective number of excitons taking part in the interaction. This highly compact system provides a room temperature testing platform for quantum cavity electromagnetics at the deep subwavelength scale.

Hybrid plasmonic nanostructures based on controlled integration of MoS2 flakes on metallic nanoholes

Here, we propose an easy and robust strategy for the versatile preparation of hybrid plasmonic nanopores by means of controlled deposition of single flakes of MoS2 directly on top of metallic holes. The device is realized on silicon nitride membranes and can be further refined by TEM or FIB milling to achieve the passing of molecules or nanometric particles through a pore. Importantly, we show that the plasmonic enhancement provided by the nanohole is strongly accumulated in the 2D nanopore, thus representing an ideal system for single-molecule sensing and sequencing in a flow-through configuration. Here, we also demonstrate that the prepared 2D material can be decorated with metallic nanoparticles that can couple their resonance with the nanopore resonance to further enhance the electromagnetic field confinement at the nanoscale level. This method can be applied to any gold nanopore with a high level of reproducibility and parallelization; hence, it can pave the way to the next generation of solid-state nanopores with plasmonic functionalities. Moreover, the controlled/ordered integration of 2D materials on plasmonic nanostructures opens a pathway towards new investigation of the following: enhanced light emission; strong coupling from plasmonic hybrid structures; hot electron generation; and sensors in general based on 2D materials.

Observing phase transformation in CVD-grown MoS2via atomic resolution TEM

We utilized in situ transmission electron microscopy to observe phase transformation in CVD-grown MoS₂. Significantly, the reaction was performed under electron irradiation through appropriate control of the electron dose and exposure time. Moreover, we proposed a new route between the 2H and 1T phases that involved the higher energy states TS1/TS2.

Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides

Two-dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs), offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy-harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge-carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well-established doping techniques (e.g. ion implantation and diffusion), which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non-covalent interactions. Such research endeavours enabled not only the tuning of the charge-carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically-thin TMDs - in the form of substrate-supported or solution-dispersed nanosheets - and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.

Ultrafast Heat Flow in Heterostructures of Au Nanoclusters on Thin Films: Atomic Disorder Induced by Hot Electrons

We study the ultrafast structural dynamics, in response to electronic excitations, in heterostructures composed of size-selected Au nanoclusters on thin-film substrates with the use of femtosecond electron diffraction. Various forms of atomic motion, such as thermal vibrations, thermal expansion, and lattice disordering, manifest as distinct and quantifiable reciprocal-space observables. In photoexcited supported nanoclusters, thermal equilibration proceeds through intrinsic heat flow between their electrons and their lattice and extrinsic heat flow between the nanoclusters and their substrate. For an in-depth understanding of this process, we have extended the two-temperature model to the case of 0D/2D heterostructures and used it to describe energy flow among the various subsystems, to quantify interfacial coupling constants and to elucidate the role of the optical and thermal substrate properties. When lattice heating of Au nanoclusters is dominated by intrinsic heat flow, a reversible disordering of atomic positions occurs, which is absent when heat is injected as hot substrate phonons. The present analysis indicates that hot electrons can distort the lattice of nanoclusters, even if the lattice temperature is below the equilibrium threshold for surface premelting. Based on simple considerations, the effect is interpreted as activation of surface diffusion due to modifications of the potential energy surface at high electronic temperatures. We discuss the implications of such a process in structural changes during surface chemical reactions.

Stable and scalable 1T MoS2 with low temperature-coefficient of resistance

Monolithic realization of metallic 1T and semiconducting 2H phases makes MoS₂ a potential candidate for future microelectronic circuits. A method for engineering a stable 1T phase from the 2H phase in a scalable manner and an in-depth electrical characterization of the 1T phase is wanting at large. Here we demonstrate a controllable and scalable 2H to 1T phase engineering technique for MoS₂ using microwave plasma. Our method allows lithographically defining 1T regions on a 2H sample. The 1T samples show excellent temporal and thermal stability making it suitable for standard device fabrication techniques. We conduct both two-probe and four-probe electrical transport measurements on devices with back-gated field effect transistor geometry in a temperature range of 4 K to 300 K. The 1T samples exhibit Ohmic current-voltage characteristics in all temperature ranges without any dependence to the gate voltage, a signature of a metallic state. The sheet resistance of our 1T MoS₂ sample is considerably lower and the carrier concentration is a few orders of magnitude higher than that of the 2H samples. In addition, our samples show negligible temperature dependence of resistance from 4 K to 300 K ruling out any hoping mediated or activated electrical transport.

Observation of Gap Opening in 1T' Phase MoS2 Nanocrystals

Two-dimensional (2D) transition metal dichalcogenides (TMDs) manifest in various polymorphs, which deliver different electronic properties; the most prominent among them include the semiconducting 2H phase and metallic 1T (or distorted 1T' phase) phase. Alkali metal intercalation or interface strain has been used to induce semiconductor-to-metal transition in a monolayer MoS₂ sheet, leading to exotic quantum states or improved performance in catalysis. However, the direct growth of 1T or 1T' phase MoS₂ is challenging due to its metastability. Here, we report MBE growth of isolated 1T' and 2H MoS₂ nanocrystals on a Au substrate; these nanocrystals can be differentiated unambiguously by their electronic states using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). By studying the initial stages of nucleation during molecular beam epitaxy (MBE) of MoS₂, we could identify atomic clusters (30-50 atoms) with intralayer stacking corresponding to 1T' and 2H separately, which suggests a deterministic growth mechanism from initial nuclei. Furthermore, a topological insulator type behavior was observed for the 1T' MoS₂ crystals, where an energy gap opening of 80 meV was measured by STS in the basal plane at 5 K, with the edge of the nanocrystals remaining metallic.

Synergetic photocatalytic effect between 1 T@2H-MoS2 and plasmon resonance induced by Ag quantum dots

Semiconductor phase transitions and plasma noble metal quantum dots (QDs) for visible-light-driven photocatalysts have attracted significant research interest. In this study, novel microwave hydrothermal and photo-reduction methods are proposed to synthesise a visible-light-driven plasma photocatalytic 1T@2H-MoS₂/Ag composite. Photoelectrochemical results show that the introduction of the 1T phase and Ag significantly enhances the light response range and charge separation. The 1T phase can act as a co-catalyst to provide a high electron concentration. Ag QDs can effectively improve the light absorption and catalytic effect. The synergistic effect between the 1T@2H-MoS₂ microspheres and localised surface plasmon resonance of the Ag QDs can effectively enhance the photocatalytic activity of 1T@2H-MoS₂/Ag. The developed 1T@2H-MoS₂/Ag composite is superior, not only with respect to a visible-light photocatalytic degradation of conventional dyes, but also in the photocatalytic reduction of Cr(VI). Compared with 2H-MoS₂, the catalytic efficiency of 1T@2H-MoS₂/Ag for Cr(VI) and MB is increased by 81% and 41%, respectively. This study demonstrates that the introduction of 1T-MoS₂ and Ag QDs can significantly enhance the catalytic properties of 2H-MoS₂. The microwave and photo-reduction technologies can be employed as green, safe, simple, and rapid methods for the synthesis of noble metal plasma composites.

Stabilized monolayer 1T MoS2 embedded in CoOOH for highly efficient overall water splitting

The complicated synthesis procedure and the unstable nature of 1T MoS2 vastly impede its practical application although it has shown a high performance for many different applications. Herein, we have synthesized ultrastable 1T phase MoS2 embedded in CoOOH by a facile one-pot strategy and achieved a high overall water splitting activity. The amorphous CoOOH in this heterostructure not only exhibits high oxygen evolution reaction activity, but also anchors and stabilizes the 1T MoS2 as vertically aligned single layers. This novel method gives new insight into developing stable and active atomically thin transition metal dichalcogenide heterostructures.

Mechanical and electronic properties of Janus monolayer transition metal dichalcogenides

The mechanical and electronic properties of Janus monolayer transition metal dichalcogenides MXY (M  =  Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W; X/Y  =  S, Se, Te) were investigated using density functional theory. Results show that breaking the out-of-plane structural symmetry can be used to tune the electronic and mechanical behavior of monolayer transition metal dichalcogenides. The band gaps of monolayer WXY and MoXY are in the ranges of 0.16-1.91 and 0.94-1.69 eV, respectively. A semiconductor to metallic phase transition occurred in Janus monolayer MXY (M  =  Ti, Zr and Hf). The monolayers MXY (M  =  V, Nb, Ta and Cr) show metallic characteristics, which show no dependence on the structural symmetry breaking. The mechanical properties of MXY depended on the composition. Monolayer MXY (M  =  Mo, Ti, Zr, Hf and W) showed brittle characteristic, whereas monolayer CrXY and VXY are with ductile characteristic. The in-plane stiffness of pristine and Janus monolayer MXY are in the range between 22 and 158 N m^-1. The tunable electronic and mechanical properties of these 2D materials would advance the development of ultra-sensitive detectors, nanogenerators, low-power electronics, and energy harvesting and electromechanical systems.

Structural stability of coplanar 1T-2H superlattice MoS2 under high energy electron beam

Coplanar heterojunctions composed of van der Waals layered materials with different structural polymorphs have drawn immense interest recently due to low contact resistance and high carrier injection rate owing to low Schottky barrier height. Present research has largely focused on efficient exfoliation of these layered materials and their restacking to achieve better performances. We present here a microwave assisted easy, fast and efficient route to induce high concentration of metallic 1T phase in the original 2H matrix of exfoliated MoS₂ layers and thus facilitating the formation of a 1T-2H coplanar superlattice phase. High resolution transmission electron microscopy (HRTEM) investigations reveal formation of highly crystalline 1T-2H hybridized structure with sharp interface and disclose the evidence of surface ripplocations within the same exfoliated layer of MoS₂. In this work, the structural stability of 1T-2H superlattice phase during HRTEM measurements under an electron beam of energy 300 keV is reported. This structural stability could be either associated to the change in electronic configuration due to induction of the restacked hybridized phase with 1T- and 2H-regions or to the formation of the surface ripplocations. Surface ripplocations can act as an additional source of scattering centers to the electron beam and also it is possible that a pulse train of propagating ripplocations can sweep out the defects via interaction from specific areas of MoS₂ sheets.

Plasmonics with two-dimensional semiconductors: from basic research to technological applications

Herein, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors have their own peculiarities, along with potential technological capabilities. Plasmons of transition-metal dichalcogenides share features typical of graphene, due to their honeycomb structure, but with damping processes dominated by intraband rather than interband transitions, unlike graphene. Spin-orbit coupling strongly affects the plasmonic spectrum of buckled honeycomb lattices (silicene and germanene), while the anisotropic lattice of phosphorene determines different propagation of plasmons along the armchair and zigzag directions. Black phosphorus is also a suitable material for ultrafast plasmonics, for which the active plasmonic response can be initiated by photoexcitation with femtosecond pulses. We also review existing applications of plasmonics with two-dimensional materials in the fields of thermoplasmonics, biosensing, and plasma-wave Terahertz detection. Finally, we consider the capabilities of van der Waals heterostructures for innovative low-loss plasmonic devices.

Novel structured transition metal dichalcogenide nanosheets

Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have attracted considerable attention owing to their unique properties and great potential in a wide range of applications. Great efforts have been devoted to the preparation of novel-structured TMD nanosheets by engineering their intrinsic structures at the atomic scale. Until now, a lot of new-structured TMD nanosheets, such as vacancy-containing TMDs, heteroatom-doped TMDs, TMD alloys, 1T'/1T phase and in-plane TMD crystal-phase heterostructures, TMD heterostructures and Janus TMD nanosheets, have been prepared. These materials exhibit unique properties and hold great promise in various applications, including electronics/optoelectronics, thermoelectrics, catalysis, energy storage and conversion and biomedicine. This review focuses on the most recent important discoveries in the preparation, characterization and application of these new-structured ultrathin 2D layered TMDs.

Morphology controlled graphene-alloy nanoparticle hybrids with tunable carbon monoxide conversion to carbon dioxide

Selective oxidation of CO to CO2 using metallic or alloy nanoparticles as catalysts can solve two major problems of energy requirements and environmental pollution. Achieving 100% conversion efficiency at a lower temperature is a very important goal. This requires sustained efforts to design and develop novel supported catalysts containing alloy nanoparticles. In this regard, the decoration of nanoalloys with graphene, as a support for the catalyst, can provide a novel structure due to the synergic effect of the nanoalloys and graphene. Here, we demonstrate the effect of nano-PdPt (Palladium-Platinum) alloys having different morphologies on the catalytic efficiency for the selective oxidation of CO. Efforts were made to prepare different morphologies of PdPt alloy nanoparticles with the advantage of tuning the capping agent (PVP - polyvinyl pyrollidone) and decorating them on graphene sheets via the wet-chemical route. The catalytic activity of the G-PdPt hybrids with an urchin-like morphology has been found to be superior (higher % conversion at 135 °C lower) to that with a nanoflower morphology. The above experimental observations are further supported by molecular dynamics (MD) simulations.

A vacancy-driven phase transition in MoX2 (X: S, Se and Te) nanoscrolls

Atomically thin MoX2 (MoS2, MoSe2 and MoTe2) exhibits semiconducting, metallic, and semi-metallic properties associated with different polymorphic phases such as 2H, 1T and distorted 1T (1T'), respectively. The phase transitions from 2H to 1T for TMDs have been reported, but the mechanism for the formation and fraction control of 1T and 1T' phases in phase transition processes has never been reported because the 1T and 1T' phases are very unstable even at room temperature. To solve the problem of the thermal instability in the 1T and 1T' phases and investigate the mechanism, we design and synthesize nanoscrolls of MoX2 which have two key attributes, bending strain for phase transition and van der Waals forces as the self-stabilizing energy for thermal stability at high temperature and then investigate the mechanism of phase transition in the synthesized nanoscrolls by an increase in temperature. It turns out that the phase transition of the 2H to the 1T phase is driven by the transition metal Mo vacancy in the XY plane and that of the 1T to the 1T' phase is induced by the chalcogen X vacancy in the Z plane. In addition, each phase itself and fractions of the 2H, 1T and 1T' phases in nanoscrolls can be freely controlled by inducing vacancies of transition metal and chalcogen with increasing temperature.

Misorientation-Angle-Dependent Phase Transformation in van der Waals Multilayers via Electron-Beam Irradiation

Misorientation-angle dependence on layer thickness is an intriguing feature of van der Waals materials, which causes stark optical gain and electrical transport modulation. However, the influence of misorientation angle on phase transformation is not determined yet. Herein, this phenomenon in a MoS₂ multilayer via in situ electron-beam irradiation is reported. An AA'-stacked MoS₂ bilayer undergoes structural transformation from the 2H semiconducting phase to the 1T' metallic phase, similar to a MoS₂ monolayer, which is confirmed via in situ transmission electron microscopy. Moreover, non-AA' stacking, which has no local AA' stacking order in the Moiré pattern, does not reveal such a phase transformation. While a collective sliding motion of chalcogen atoms easily occurs during the transformation in AA' stacking, in non-AA' stacking it is suppressed by the weak van der Waals strength and by the chalcogen atoms interlocked at different orientations, which disfavor their kinetics by the increased entropy of mixing.

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS₂ single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS₂ samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS₂, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Plasmonic Hot Carriers-Controlled Second Harmonic Generation in WSe2 Bilayers

Modulating second harmonic generation (SHG) by a static electric field through either electric-field-induced SHG or charge-induced SHG has been well documented. Nonetheless, it is essential to develop the ability to dynamically control and manipulate the nonlinear properties, preferably at high speed. Plasmonic hot carriers can be resonantly excited in metal nanoparticles and then injected into semiconductors within 10-100 fs, where they eventually decay on a comparable time scale. This allows one to rapidly manipulate all kinds of characteristics of semiconductors, including their nonlinear properties. Here we demonstrate that plasmonically generated hot electrons can be injected from plasmonic nanostructure into bilayer (2L) tungsten diselenide (WSe₂), breaking the material inversion symmetry and thus inducing an SHG. With a set of pump-probe experiments we confirm that it is the dynamic separation electric field resulting from the hot carrier injection (rather than a simple optical field enhancement) that is the cause of SHG. Transient absorption measurement further substantiate the plasmonic hot electrons injection and allow us to measure a rise time of ∼120 fs and a fall time of 1.9 ps. Our study creates opportunity for the ultrafast all-optical control of SHG in an all-optical manner that may enable a variety of applications.

IR-Driven Ultrafast Transfer of Plasmonic Hot Electrons in Nonmetallic Branched Heterostructures for Enhanced H2 Generation

The ultrafast transfer of plasmon-induced hot electrons is considered an effective kinetics process to enhance the photoconversion efficiencies of semiconductors through strong localized surface plasmon resonance (LSPR) of plasmonic nanostructures. Although this classical sensitization approach is widely used in noble-metal-semiconductor systems, it remains unclear in nonmetallic plasmonic heterostructures. Here, by combining ultrafast transient absorption spectroscopy with theoretical simulations, IR-driven transfer of plasmon-induced hot electron in a nonmetallic branched heterostructure is demonstrated, which is fabricated through solvothermal growth of plasmonic W₁₈ O₄₉ nanowires (as branches) onto TiO₂ electrospun nanofibers (as backbones). The ultrafast transfer of hot electron from the W₁₈ O₄₉ branches to the TiO₂ backbones occurs within a timeframe on the order of 200 fs with very large rate constants ranging from 3.8 × 10¹² to 5.5 × 10¹² s^-1 . Upon LSPR excitation by low-energy IR photons, the W₁₈ O₄₉ /TiO₂ branched heterostructure exhibits obviously enhanced catalytic H₂ generation from ammonia borane compared with that of W₁₈ O₄₉ nanowires. Further investigations by finely controlling experimental conditions unambiguously confirm that this plasmon-enhanced catalytic activity arises from the transfer of hot electron rather than from the photothermal effect.

Interstitial Mo-Assisted Photovoltaic Effect in Multilayer MoSe2 Phototransistors

Thin-film transistors (TFTs) based on multilayer molybdenum diselenide (MoSe₂ ) synthesized by modified atmospheric pressure chemical vapor deposition (APCVD) exhibit outstanding photoresponsivity (103.1 A W^-1 ), while it is generally believed that optical response of multilayer transition metal dichalcogenides (TMDs) is significantly limited due to their indirect bandgap and inefficient photoexcitation process. Here, the fundamental origin of such a high photoresponsivity in the synthesized multilayer MoSe₂ TFTs is sought. A unique structural characteristic of the APCVD-grown MoSe₂ is observed, in which interstitial Mo atoms exist between basal planes, unlike usual 2H phase TMDs. Density functional theory calculations and photoinduced transfer characteristics reveal that such interstitial Mo atoms form photoreactive electronic states in the bandgap. Models indicate that huge photoamplification is attributed to trapped holes in subgap states, resulting in a significant photovoltaic effect. In this study, the fundamental origin of high responsivity with synthetic MoSe₂ phototransistors is identified, suggesting a novel route to high-performance, multifunctional 2D material devices for future wearable sensor applications.

Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition

1T-1H metal-semiconductor interfaces in two-dimensional (2D) transition-metal dichalcogenides (TMDs) play a crucial role in utilizing the band gaps of TMDs for applications in electronic devices. Although the 1T-1H two-phase structure has been observed in exfoliated 2D nanosheets and chemically or physically treated TMDs, it cannot in principle be achieved in large-scale TMD monolayers grown by chemical vapor deposition (CVD), which is a fabrication method for electronic device applications, because of the metastable nature of the 1T phase. In this study we report CVD growth of 1T-1H two phase TMD monolayers by controlling thermal strains and alloy compositions. It was found that in-plane thermal strains arising from the difference in thermal expansion coefficients between TMD monolayers and substrates can drive the 1H to 1T transition during cooling after CVD growth. Moreover, grain boundaries in the 2D crystals act as the nucleation sites of the 1T phase and the lattice strain perturbations from alloying noticeably promote the formation of the metastable 1T phase. This work has an important implication in tailoring structure and properties of CVD grown 2D TMDs by phase engineering.

Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization

Structures determine properties of materials, and controllable phase transitions are, therefore, highly desirable for exploring exotic physics and fabricating devices. We report a direct observation of a controllable semiconductor-metal phase transition in bilayer tungsten diselenide (WSe₂) with potassium (K) surface functionalization. Through the integration of in situ field-effect transistors, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy measurements, and first-principles calculations, we identify that the electron doping from K adatoms drives bilayer WSe₂ from a 2H phase semiconductor to a 1T' phase metal. The phase transition mechanism is satisfactorily explained by the electronic structures and energy alignment of the 2H and 1T' phases. This explanation can be generally applied to understand doping-induced phase transitions in two-dimensional (2D) structures. Finally, the associated dramatic changes of electronic structures and electrical conductance make this controllable semiconductor-metal phase transition of interest for 2D semiconductor-based electronic and optoelectronic devices.

Semiconductor-metal structural phase transformation in MoTe2 monolayers by electronic excitation

Optical modulation of the crystal structure and materials properties is an increasingly important technique for functionalization of two-dimensional and layered semiconductors, where traditional methods like chemical doping are ineffective. Controllable transformation between the semiconducting (H) and semimetallic (T') polytypes of transition metal chalcogenide monolayers is of central importance to two-dimensional electronics, and thermally-driven and strain-driven examples of this phase transformation have been previously reported. However, the possibility of a H-T' phase transformation driven by electronic or optical excitation is less explored and little is known about the potential energy surface and the magnitude of activation barriers or the mechanism of the phase transformation in the excited state. Here, we model the electronic and ionic structure of excited MoTe₂ crystals and demonstrate how electronic excitation leads to a Fermi-surface-nesting driven softening of phonon modes at the Brillouin zone boundary and the subsequent stabilization of a low-energy intermediate crystal structure along the semiconductor-metal phase transition pathway. The significantly reduced barriers for this transformation upon electronic excitation suggest that optical excitation may enable rapid and controllable synthesis of lateral semiconductor-metal heterophase homojunctions in monolayer materials for use in next-generation two-dimensional nano-electronics applications.

Giant gap-plasmon tip-enhanced Raman scattering of MoS2 monolayers on Au nanocluster arrays

In this article, we present the results of a gap-plasmon tip-enhanced Raman scattering study of MoS₂ monolayers deposited on a periodic array of Au nanostructures on a silicon substrate forming a two dimensional (2D) crystal/plasmonic heterostructure. We observe a giant Raman enhancement of the phonon modes in the MoS₂ monolayer located in the plasmonic gap between the Au tip apex and Au nanoclusters. Tip-enhanced Raman mapping allows us to determine the gap-plasmon field distribution responsible for the formation of hot spots. These hot spots provide an unprecedented giant Raman enhancement of 5.6 × 10⁸ and a spatial resolution as small as 2.3 nm under ambient conditions. Moreover, due to strong hot electron doping in the order of 1.8 × 10¹³ cm^-2, we observe a structural change of MoS₂ from the 2H to the 1T phase. Owing to the very good spatial resolution, we are able to spatially resolve those doping sites. To the best of our knowledge, this is the first time reporting of such a phenomenon with nm spatial resolution. Our results will open the perspectives of optical diagnostics with nanometer resolution for many other 2D materials.

Large Dendritic Monolayer MoS2 Grown by Atmospheric Pressure Chemical Vapor Deposition for Electrocatalysis

The edge sites of MoS₂ are catalytically active for the hydrogen evolution reaction (HER), and growing monolayer structures that are edge-rich is desirable. Here, we show the production of large-area highly branched MoS₂ dendrites on amorphous SiO₂/Si substrates using an atmospheric pressure chemical vapor deposition and explore their use in electrocatalysis. By tailoring the substrate construction, the monolayer MoS₂ evolves from triangular to dendritic morphology because of the change of growth conditions. The rough edges endow dendritic MoS₂ with a fractal dimension down to 1.54. The highly crystalline basal plane and the edge of the dendrites are visualized at atomic resolution using an annular dark field scanning transmission electron microscope. The monolayer dendrites exhibit strong photoluminescence, which is indicative of the direct band gap emission, which is preserved after being transferred. Post-transfer sulfur annealing restores the structural defects and decreases the n-type doping in MoS₂ monolayers. The annealed MoS₂ dendrites show good and highly durable HER performance on the glassy carbon with a large exchange current density of 32 μA cm_geo^-2, demonstrating its viability as an efficient HER catalyst.

Small stoichiometric (MoS2)n clusters with the 1T phase

Stoichiometric (MoS₂)_n clusters (n = 1–6) were systematically studied by density functional theory calculations with hybrid B3LYP and pure GGA PW91 functionals.

Two-dimensional light-emitting materials: preparation, properties and applications

We review the recent development in two-dimensional (2D) light-emitting materials and describe their preparation methods, optical/optoelectronic properties and applications.

First principles study on 2H–1T′ transition in MoS2 with copper

Adsorption of Cu can induce phase transition of MoS₂ from 2H to metallic 1T′.

Magnetism in monolayer 1T-MoS2 and 1T-MoS2H tuned by strain

The magnetic properties of 1T-MoS₂ and 1T-MoS₂H subjected to equiaxial tensile strain are calculated using density functional theory. It is shown that in a strain-free state, 1T-MoS₂ and 1T-MoS₂H both exhibit magnetic behavior; as the strain increases, their magnetic properties show an increasing trend. This shows a significant difference from those of 2H-MoS₂ and 2H-MoS₂H. Based on Crystal Field Theory, the magnetic generation and variation of 1T-MoS₂ and 1T-MoS₂H are explained in this paper. The good tunable magnetic properties of 1T-MoS₂ and 1T-MoS₂H suggest that they could be applied as a spin injection source for spin electronics.

The magnetic properties of 1T-MoS₂ and 1T-MoS₂H subjected to equiaxial tensile strain are calculated using density functional theory.

Single-Nanoparticle Plasmonic Electro-optic Modulator Based on MoS2 Monolayers

The manipulation of light in an integrated circuit is crucial for the development of high-speed electro-optic devices. Recently, molybdenum disulfide (MoS₂) monolayers generated broad interest for the optoelectronics because of their huge exciton binding energy, tunable optical emission, direct electronic band-gap structure, etc. Miniaturization and multifunctionality of electro-optic devices further require the manipulation of light-matter interaction at the single-nanoparticle level. The strong exciton-plasmon interaction that is generated between the MoS₂ monolayers and metallic nanostructures may be a possible solution for compact electro-optic devices at the nanoscale. Here, we demonstrate a nanoplasmonic modulator in the visible spectral region by combining the MoS₂ monolayers with a single Au nanodisk. The narrow MoS₂ excitons coupled with broad Au plasmons result in a deep Fano resonance, which can be switched on and off by applying different gate voltages on the MoS₂ monolayers. A reversible display device that is based on this single-nanoparticle modulator is demonstrated with a heptamer pattern that is actively controlled by the external gates. Our work provides a potential application for electro-optic modulation on the nanoscale and promotes the development of gate-tunable nanoplasmonic devices in the future.

MoS2-Based Mixed-Dimensional van der Waals Heterostructures: A New Platform for Excellent and Controllable Microwave-Absorption Performance

It is widely recognized that constructing multiple interface structures for enhanced interface polarization is beneficial to microwave absorption. Here, we report our work of achieving excellent microwave-absorption performance and controlling better-defined interfaces in vertically stacked two-dimensional (2D) MoS₂ with other dimensional building blocks. The optimal reflection loss and effective absorbing bandwidth (reflection loss <-10 dB) of several mixed-dimensional van der Waals heterostructures are as follows: (i) for 2-0 type (2D MoS₂/zero-dimensional Ni nanoparticles), -19.7 dB and 2.92 GHz; (ii) for 2-1 type (2D MoS₂/one-dimensional carbon nanotubes), -47.9 dB and 5.60 GHz; and (iii) for 2-3 type (2D MoS₂/three-dimensional carbon layers), -69.2 dB and 4.88 GHz. As a result, by selected synthesis of different types of microstructures, we can regulate and control microwave-absorption properties in MoS₂ mixed-dimensional van der Waals heterostructures. In addition, attributing to the better-defined interfaces generated in mixed-dimensional van der Waals heterostructures, we found an alternative strategy to improve microwave attenuation properties of 2-0, 2-1, and 2-3 samples by controlling interfacial contacts. The results indicate that mixed-dimensional van der Waals heterostructures provide a new stage for the next generation of microwave-absorbing materials.

Interplay of hot electrons from localized and propagating plasmons

Plasmon-induced hot-electron generation has recently received considerable interest and has been studied to develop novel applications in optoelectronics, photovoltaics and green chemistry. Such hot electrons are typically generated from either localized plasmons in metal nanoparticles or propagating plasmons in patterned metal nanostructures. Here we simultaneously generate these heterogeneous plasmon-induced hot electrons and exploit their cooperative interplay in a single metal-semiconductor device to demonstrate, as an example, wavelength-controlled polarity-switchable photoconductivity. Specifically, the dual-plasmon device produces a net photocurrent whose polarity is determined by the balance in population and directionality between the hot electrons from localized and propagating plasmons. The current responsivity and polarity-switching wavelength of the device can be varied over the entire visible spectrum by tailoring the hot-electron interplay in various ways. This phenomenon may provide flexibility to manipulate the electrical output from light-matter interaction and offer opportunities for biosensors, long-distance communications, and photoconversion applications.

Plasmon-induced hot electrons have potential applications spanning photodetection and photocatalysis. Here, Hoang et al. study the interplay between hot electrons generated by localized and propagating plasmons, and demonstrate wavelength-controlled polarity-switchable photoconductivity

Plasmon-trion and plasmon-exciton resonance energy transfer from a single plasmonic nanoparticle to monolayer MoS2

Resonance energy transfer (RET) from plasmonic metal nanoparticles (NPs) to two-dimensional (2D) materials enhances the performance of 2D optoelectronic devices and sensors. Herein, single-NP scattering spectroscopy is employed to investigate plasmon-trion and plasmon-exciton RET from single Au nanotriangles (AuNTs) to monolayer MoS₂, at room temperature. The large quantum confinement and reduced dielectric screening in monolayer MoS₂ facilitates efficient RET between single plasmonic metal NPs and the monolayer. Because of the large exciton binding energy of monolayer MoS₂, charged excitons (i.e., trions) are observed at room temperature, which enable us to study the plasmon-trion interactions under ambient conditions. Tuning of plasmon-trion and plasmon-exciton RET is further achieved by controlling the dielectric constant of the medium surrounding the AuNT-MoS₂ hybrids. Our observation of switchable plasmon-trion and plasmon-exciton RET inspires new applications of the hybrids of 2D materials and metal nanoparticles.

Extended Polymorphism of Two-Dimensional Material

When controlling electronic properties of bulk materials, we usually assume that the basic crystal structure is fixed. However, in two-dimensional (2D) materials, atomic structure or polymorph is attracting growing interest as a controlling parameter to functionalize their properties. Various polymorphs can exist in transition metal dichalcogenides (TMDCs) from which 2D materials are generated, and polymorphism has drastic impacts on the electronic states. Here we report the discovery of an unprecedented polymorph of a TMDC 2D material. By mechanical exfoliation, we made thin flakes from a single crystal of 2Ha-type tantalum disulfide (TaS₂), a metallic TMDC with a charge-density-wave (CDW) phase. Microbeam X-ray diffraction measurements and electrical transport measurements indicate that thin flakes possess a polymorph different from any one known in TaS₂ bulk crystals. Moreover, the flakes with the unique polymorph displayed the dramatically enhanced CDW ordering temperature. The present results suggest the potential existence of diverse structural and electronic phases accessible only in 2D materials.

Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

Polymorphism of two-dimensional transition metal dichalcogenides such as molybdenum disulfide (MoS₂) exhibit fascinating optical and transport properties. Here, we observe a tunable inverted gap (~0.50 eV) and a fundamental gap (~0.10 eV) in quasimetallic monolayer MoS₂. Using spectral-weight transfer analysis, we find that the inverted gap is attributed to the strong charge–lattice coupling in two-dimensional transition metal dichalcogenides (2D-TMDs). A comprehensive experimental study, supported by theoretical calculations, is conducted to understand the transition of monolayer MoS₂ on gold film from trigonal semiconducting 1H phase to the distorted octahedral quasimetallic 1T’ phase. We clarify that electron doping from gold, facilitated by interfacial tensile strain, is the key mechanism leading to its 1H–1T’ phase transition, thus resulting in the formation of the inverted gap. Our result shows the importance of charge–lattice coupling to the intrinsic properties of the inverted gap and polymorphism of MoS₂, thereby unlocking new possibilities for 2D-TMD-based device fabrication.

MoS₂ exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS₂ on Au, facilitated by interfacial strain and electron transfer from Au to MoS₂.

In Situ Two-Step Photoreduced SERS Materials for On-Chip Single-Molecule Spectroscopy with High Reproducibility

A method is developed to synthesize surface-enhanced Raman scattering (SERS) materials capable of single-molecule detection, integrated with a microfluidic system. Using a focused laser, silver nanoparticle aggregates as SERS monitors are fabricated in a microfluidic channel through photochemical reduction. After washing out the monitor, the aggregates are irradiated again by the same laser. This key step leads to full reduction of the residual reactants, which generates numerous small silver nanoparticles on the former nanoaggregates. Consequently, the enhancement ability of the SERS monitor is greatly boosted due to the emergence of new "hot spots." At the same time, the influence of the notorious "memory effect" in microfluidics is substantially suppressed due to the depletion of surface residues. Taking these advantages, two-step photoreduced SERS materials are able to detect different types of molecules with the concentration down to 10^-13 m. Based on a well-accepted bianalyte approach, it is proved that the detection limit reaches the single-molecule level. From a practical point of view, the detection reproducibility at different probing concentrations is also investigated. It is found that the effective single-molecule SERS measurements can be raised up to ≈50%. This microfluidic SERS with high reproducibility and ultrasensitivity will find promising applications in on-chip single-molecule spectroscopy.

Designing artificial 2D crystals with site and size controlled quantum dots

Ordered arrays of quantum dots in two-dimensional (2D) materials would make promising optical materials, but their assembly could prove challenging. Here we demonstrate a scalable, site and size controlled fabrication of quantum dots in monolayer molybdenum disulfide (MoS₂), and quantum dot arrays with nanometer-scale spatial density by focused electron beam irradiation induced local 2H to 1T phase change in MoS₂. By designing the quantum dots in a 2D superlattice, we show that new energy bands form where the new band gap can be controlled by the size and pitch of the quantum dots in the superlattice. The band gap can be tuned from 1.81 eV to 1.42 eV without loss of its photoluminescence performance, which provides new directions for fabricating lasers with designed wavelengths. Our work constitutes a photoresist-free, top-down method to create large-area quantum dot arrays with nanometer-scale spatial density that allow the quantum dots to interfere with each other and create artificial crystals. This technique opens up new pathways for fabricating light emitting devices with 2D materials at desired wavelengths. This demonstration can also enable the assembly of large scale quantum information systems and open up new avenues for the design of artificial 2D materials.

Plasmon-Induced Conductance Switching of an Electroactive Conjugated Polymer Nanojunction

A plasmonic molecular electronic device, consisting of poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires bridging an ultramicroelectrode and an indium tin oxide (ITO) substrate covered by gold nanoparticles (Au NPs), has been developed. Light irradiation of this device has a dramatic impact on its conductance. Polymer strands, maintained electrochemically in their oxidized, conducting state, reversibly switch to their insulating state upon irradiation by visible-wavelength light, resulting in a sharp decrease in the conductance. The high-conductance state is restored when the light is turned off. Switching depends on the wavelength and the intensity of the incident light. It is due to reversible reduction of the nanosized region of PEDOT nanowires in contact with a gold NP and is attributed to plasmon-induced hot-electron injection into the PEDOT. The high/low conductance ratio can be as great as 1000, and switching requires low light intensity (220 W/m²). These results could open the way to the design of a new family of optoelectronic switches.