Controlling many-body states by the electric-field effect in a two-dimensional material

Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics

Iontronics is a newly emerging interdisciplinary concept which bridges electronics and ionics, covering electrochemistry, solid-state physics, electronic engineering, and biological sciences. The recent developments of electronic devices are highlighted, based on electric double layers formed at the interface between ionic conductors (but electronically insulators) and various electronic conductors including organics and inorganics (oxides, chalcogenide, and carbon-based materials). Particular attention is devoted to electric-double-layer transistors (EDLTs), which are producing a significant impact, particularly in electrical control of phase transitions, including superconductivity, which has been difficult or impossible in conventional all-solid-state electronic devices. Besides that, the current state of the art and the future challenges of iontronics are also reviewed for many applications, including flexible electronics, healthcare-related devices, and energy harvesting.

Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer

Despite numerous studies on two-dimensional van der Waals heterostructures, a full understanding of the charge transport and photoinduced current mechanisms in these structures, in particular, associated with charge depletion/inversion layers at the interface remains elusive. Here, we investigate transport properties of a prototype multilayer MoS₂/WSe₂ heterojunction via a tunable charge inversion/depletion layer. A charge inversion layer was constructed at the surface of WSe₂ due to its relatively low doping concentration compared to that of MoS₂, which can be tuned by the back-gate bias. The depletion region was limited within a few nanometers in the MoS₂ side, while charges are fully depleted on the whole WSe₂ side, which are determined by Raman spectroscopy and transport measurements. Charge transport through the heterojunction was influenced by the presence of the inversion layer and involves two regimes of tunneling and recombination. Furthermore, photocurrent measurements clearly revealed recombination and space-charge-limited behaviors, similar to those of the heterostructures built from organic semiconductors. This contributes to research of various other types of heterostructures and can be further applied for electronic and optoelectronic devices.

Angle-resolved photoemission spectroscopy for the study of two-dimensional materials

Quantum systems in confined geometries allow novel physical properties that cannot easily be attained in their bulk form. These properties are governed by the changes in the band structure and the lattice symmetry, and most pronounced in their single layer limit. Angle-resolved photoemission spectroscopy (ARPES) is a direct tool to investigate the underlying changes of band structure to provide essential information for understanding and controlling such properties. In this review, recent progresses in ARPES as a tool to study two-dimensional atomic crystals have been presented. ARPES results from few-layer and bulk crystals of material class often referred as “beyond graphene” are discussed along with the relevant developments in the instrumentation.

Influence of Domain Walls in the Incommensurate Charge Density Wave State of Cu Intercalated 1T-TiSe_{2}

We report a low-temperature scanning tunneling microscopy study of the charge density wave (CDW) order in 1T-TiSe_{2} and Cu_{0.08}TiSe_{2}. In pristine 1T-TiSe_{2} we observe a long-range coherent commensurate CDW (CCDW) order. In contrast, Cu_{0.08}TiSe_{2} displays an incommensurate CDW (ICDW) phase with localized CCDW domains separated by domain walls. Density of states measurements indicate that the domain walls host an extra population of fermions near the Fermi level which may play a role in the emergence of superconductivity in this system. Fourier transform scanning tunneling spectroscopy studies suggest that the dominant mechanism for CDW formation in the ICDW phase may be electron-phonon coupling.

Superconductivity in a chiral nanotube

Chirality of materials are known to affect optical, magnetic and electric properties, causing a variety of nontrivial phenomena such as circular dichiroism for chiral molecules, magnetic Skyrmions in chiral magnets and nonreciprocal carrier transport in chiral conductors. On the other hand, effect of chirality on superconducting transport has not been known. Here we report the nonreciprocity of superconductivity—unambiguous evidence of superconductivity reflecting chiral structure in which the forward and backward supercurrent flows are not equivalent because of inversion symmetry breaking. Such superconductivity is realized via ionic gating in individual chiral nanotubes of tungsten disulfide. The nonreciprocal signal is significantly enhanced in the superconducting state, being associated with unprecedented quantum Little-Parks oscillations originating from the interference of supercurrent along the circumference of the nanotube. The present results indicate that the nonreciprocity is a viable approach toward the superconductors with chiral or noncentrosymmetric structures.

Chirality affects many properties of materials, but how it affects superconductivity remains unclear. Here, Qin et al. report nonreciprocal supercurrent flows in individual nanotubes of WS₂ via ionic gating, evidencing chiral superconducting transport.

Room-temperature electrically driven phase transition of two-dimensional 1T-TaS2 layers

Due to the strong electron-electron and electron-phonon interactions, the transition metal dichalcogenide 1T-TaS₂ exhibits temperature dependent as well as electric field driven charge density wave (CDW) phase transitions (PTs). In this work, we investigate the thickness dependence of the electric field driven PT in 1T-TaS₂ two-dimensional (2D) flakes. Electrically driven PT between high- and low-resistance states occurs at temperatures in the range of 60-300 K. For a thin 1T-TaS₂ (≤8.8 nm) sample, only one PT is triggered, whereas thick films experience double PTs (13-17 nm) and multiple PTs (≥17.5 nm) until reaching the final low-resistance state. The multiple PTs may imply the existence of hidden nearly-commensurate charge density wave (NCCDW) states. In addition, a threshold electric field is observed, in which the low-resistance state is unable to resume the high-resistance state. Finally, we fabricate a 1T-TaS₂/graphene hybrid field effect transistor to achieve a gate-tunable PT at room temperature. Such a hybrid device might provide a new avenue for the construction of CDW-based memories based on 2D materials.

Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

Transitional metal ditelluride WTe₂ has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe₂. Here, we report a successful synthesis of mono- to few-layer WTe₂ via chemical vapor deposition. Using atomically thin WTe₂ nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe₂ from weak antilocalization to weak localization, revealing a strong electrical field modulation of the spin-orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe₂ as a promising platform for exotic electronic and spintronic device applications.

Raman Characterization of the Charge Density Wave Phase of 1T-TiSe2: From Bulk to Atomically Thin Layers

Raman scattering is a powerful tool for investigating the vibrational properties of two-dimensional materials. Unlike the 2H phase of many transition metal dichalcogenides, the 1T phase of TiSe₂ features a Raman-active shearing and breathing mode, both of which shift toward lower energy with increasing number of layers. By systematically studying the Raman signal of 1T-TiSe₂ in dependence of the sheet thickness, we demonstrate that the charge density wave transition of this compound can be reliably determined from the temperature dependence of the peak position of the E_g mode near 136 cm^-1. The phase transition temperature is found to first increase with decreasing thickness of the sheets, followed by a decrease due to the effect of surface oxidation. The Raman spectroscopy-based method is expected to be applicable also to other 1T-phase transition metal dichalcogenides featuring a charge density wave transition and represents a valuable complement to electrical transport-based approaches.

Observation of a Charge Density Wave Incommensuration Near the Superconducting Dome in Cu_{x}TiSe_{2}

X-ray diffraction was employed to study the evolution of the charge density wave (CDW) in Cu_{x}TiSe_{2} as a function of copper intercalation in order to clarify the relationship between the CDW and superconductivity. The results show a CDW incommensuration arising at an intercalation value coincident with the onset of superconductivity at around x=0.055(5). Additionally, it was found that the charge density wave persists to higher intercalant concentrations than previously assumed, demonstrating that the CDW does not terminate inside the superconducting dome. A charge density wave peak was observed in samples up to x=0.091(6), the highest copper concentration examined in this study. The phase diagram established in this work suggests that charge density wave incommensuration may play a role in the formation of the superconducting state.

Stripe and Short Range Order in the Charge Density Wave of 1T-Cu_{x}TiSe_{2}

We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu_{x}TiSe_{2} by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period does not depend on Cu content, we observe the formation of charge stripe domains at low Cu content (x<0.02) and a breaking up of the commensurate order into 2×2 domains at higher Cu content. The latter shrink with increasing Cu concentration and tend to be phase shifted. These findings invalidate a proposed excitonic pairing as the primary CDW formation mechanism in this material.

Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe_{2}

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. Here, we demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal NbSe_{2} by an ionic liquid gate. A variation up to ∼50% in the superconducting transition temperature has been observed. Both superconductivity and CDW order can be strengthened (weakened) by increasing (reducing) the carrier density in 2D NbSe_{2}. The doping dependence of these phase transitions can be understood as driven by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.

Nanoscale Superconducting Honeycomb Charge Order in IrTe2

Entanglement of charge orderings and other electronic orders such as superconductivity is in the core of challenging physics issues of complex materials including high temperature superconductivity. Here, we report on the observation of a unique nanometer scale honeycomb charge ordering of the cleaved IrTe2 surface, which hosts a superconducting state. IrTe2 was recently established to exhibit an intriguing cascade of stripe charge orders. The stripe phases coexist with a hexagonal phase, which is formed locally and falls into a superconducting state below 3 K. The atomic and electronic structures of the honeycomb and hexagon pattern of this phase are consistent with the charge order nature, but the superconductivity does not survive on neighboring stripe charge order domains. The present work provides an intriguing physics issue and a new direction of functionalization for two-dimensional materials.

Multiferroic Two-Dimensional Materials

The relation between unusual Mexican-hat band dispersion, ferromagnetism, and ferroelasticity is investigated using a combination of analytical, first-principles, and phenomenological methods. The class of material with Mexican-hat band edge is studied using the α-SnO monolayer as a prototype. Such a band edge causes a van Hove singularity diverging with 1/sqrt[E], and a charge doping in these bands can lead to time-reversal symmetry breaking. Herein, we show that a material with Mexican-hat band dispersion, α-SnO, can be ferroelastic or paraelastic depending on the number of layers. Also, an unexpected multiferroic phase is obtained in a range of hole density for which the material presents ferromagnetism and ferroelasticity simultaneously.