151
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Scale-up fabrication of two-dimensional material membranes: challenges and opportunities. Curr Opin Chem Eng 2023. [DOI: 10.1016/j.coche.2022.100892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
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152
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Unexpectedly Spontaneous Water Dissociation on Graphene Oxide Supported by Copper Substrate. J Colloid Interface Sci 2023; 642:112-119. [PMID: 37001450 DOI: 10.1016/j.jcis.2023.03.093] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 03/10/2023] [Accepted: 03/15/2023] [Indexed: 03/22/2023]
Abstract
Water dissociation is of fundamental importance in scientific fields and has drawn considerable interest in diverse technological applications. However, the high activation barrier of breaking the OH bond within the water molecule has been identified as the bottleneck, even for the water adsorbed on the graphene oxide (GO). Herein, using the density functional theory calculations, we demonstrate that the water molecule can be spontaneously dissociated on GO supported by the (111) surface of the copper substrate (Copper-GO). This process involves a proton transferring from water to the interfacial oxygen group, and a hydroxide covalently bonding to GO. Compared to that on GO, the water dissociation barrier on Copper-GO is significantly decreased to be less than or comparable to thermal fluctuations. This is ascribed to the orbital-hybridizing interaction between copper substrate and GO, which enhances the reaction activity of interfacial oxygen groups along the basal plane of GO for water dissociation. Our work provides a novel strategy to access water dissociation via the substrate-enhanced reaction activity of interfacial oxygen groups on GO and indicates that the substrate can serve as an essential key to tuning the catalytic performance of various two-dimensional material devices.
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153
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Tian H, Ma Y, Li Z, Cheng M, Ning S, Han E, Xu M, Zhang PF, Zhao K, Li R, Zou Y, Liao P, Yu S, Li X, Wang J, Liu S, Li Y, Huang X, Yao Z, Ding D, Guo J, Huang Y, Lu J, Han Y, Wang Z, Cheng ZG, Liu J, Xu Z, Liu K, Gao P, Jiang Y, Lin L, Zhao X, Wang L, Bai X, Fu W, Wang JY, Li M, Lei T, Zhang Y, Hou Y, Pei J, Pennycook SJ, Wang E, Chen J, Zhou W, Liu L. Disorder-tuned conductivity in amorphous monolayer carbon. Nature 2023; 615:56-61. [PMID: 36859579 DOI: 10.1038/s41586-022-05617-w] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2022] [Accepted: 12/01/2022] [Indexed: 03/03/2023]
Abstract
Correlating atomic configurations-specifically, degree of disorder (DOD)-of an amorphous solid with properties is a long-standing riddle in materials science and condensed matter physics, owing to difficulties in determining precise atomic positions in 3D structures1-5. To this end, 2D systems provide insight to the puzzle by allowing straightforward imaging of all atoms6,7. Direct imaging of amorphous monolayer carbon (AMC) grown by laser-assisted depositions has resolved atomic configurations, supporting the modern crystallite view of vitreous solids over random network theory8. Nevertheless, a causal link between atomic-scale structures and macroscopic properties remains elusive. Here we report facile tuning of DOD and electrical conductivity in AMC films by varying growth temperatures. Specifically, the pyrolysis threshold temperature is the key to growing variable-range-hopping conductive AMC with medium-range order (MRO), whereas increasing the temperature by 25 °C results in AMC losing MRO and becoming electrically insulating, with an increase in sheet resistance of 109 times. Beyond visualizing highly distorted nanocrystallites embedded in a continuous random network, atomic-resolution electron microscopy shows the absence/presence of MRO and temperature-dependent densities of nanocrystallites, two order parameters proposed to fully describe DOD. Numerical calculations establish the conductivity diagram as a function of these two parameters, directly linking microstructures to electrical properties. Our work represents an important step towards understanding the structure-property relationship of amorphous materials at the fundamental level and paves the way to electronic devices using 2D amorphous materials.
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Affiliation(s)
- Huifeng Tian
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Yinhang Ma
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, China
| | - Zhenjiang Li
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Mouyang Cheng
- School of Physics, Peking University, Beijing, China
| | - Shoucong Ning
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Erxun Han
- School of Physics, Peking University, Beijing, China
| | - Mingquan Xu
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, China
| | - Peng-Fei Zhang
- Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Kexiang Zhao
- Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Ruijie Li
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Yuting Zou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - PeiChi Liao
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Shulei Yu
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Jianlin Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Shizhuo Liu
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Yifei Li
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Xinyu Huang
- School of Materials Science and Engineering, Peking University, Beijing, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, China
| | - Zhixin Yao
- School of Materials Science and Engineering, Peking University, Beijing, China
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan, China
| | - Dongdong Ding
- School of Physics, Peking University, Beijing, China
| | - Junjie Guo
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, China
| | - Jianming Lu
- School of Physics, Peking University, Beijing, China
| | - Yuyan Han
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, China
| | - Zhaosheng Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, China
| | - Zhi Gang Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Junjiang Liu
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Zhi Xu
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Kaihui Liu
- School of Physics, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Peng Gao
- Songshan Lake Materials Laboratory, Dongguan, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
- International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China
| | - Ying Jiang
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
- International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China
| | - Li Lin
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Lifen Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Wangyang Fu
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Jie-Yu Wang
- Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Maozhi Li
- Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, China
| | - Ting Lei
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Yanglong Hou
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Jian Pei
- Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Stephen J Pennycook
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, China
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Enge Wang
- Songshan Lake Materials Laboratory, Dongguan, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
- International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China
- School of Physics, Liaoning University, Shenyang, China
| | - Ji Chen
- School of Physics, Peking University, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
- Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing, China.
| | - Wu Zhou
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, China.
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China.
| | - Lei Liu
- School of Materials Science and Engineering, Peking University, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
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154
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Llaver M, Barrionuevo SD, Troiani H, Wuilloud RG, Ibañez FJ. Highly Selective and Sensitive Fluorescent Determination of Fe3+ within Alcoholic Beverages with 1,5-Diphenylcarbazone-Functionalized Graphene Quantum Dots. TALANTA OPEN 2023. [DOI: 10.1016/j.talo.2023.100202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/09/2023] Open
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155
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Lanza M, Hui F, Wen C, Ferrari AC. Resistive Switching Crossbar Arrays Based on Layered Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205402. [PMID: 36094019 DOI: 10.1002/adma.202205402] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm- 2 ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2 ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
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Affiliation(s)
- Mario Lanza
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material, Processing and Mold of the Ministry of Education, Henan Key Laboratory of Advanced, Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Chao Wen
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
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156
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Bøggild P. Research on scalable graphene faces a reproducibility gap. Nat Commun 2023; 14:1126. [PMID: 36854768 PMCID: PMC9974952 DOI: 10.1038/s41467-023-36891-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Accepted: 02/22/2023] [Indexed: 03/02/2023] Open
Abstract
More than a decade after the first demonstration of large-scale graphene synthesis by chemical vapor deposition, the commercialization of graphene products is limited not only by price, but also by consistency, reproducibility, and predictability. Here, the author discusses the reproducibility issues in the field and proposes possible solutions to improve the reliability of published results.
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Affiliation(s)
- Peter Bøggild
- Department of Physics, Technical University of Denmark, 2800 Kgs, Lyngby, Denmark.
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157
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Crisci T, Maccagnani P, Moretti L, Summonte C, Gioffrè M, Rizzoli R, Casalino M. The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13050872. [PMID: 36903750 PMCID: PMC10005663 DOI: 10.3390/nano13050872] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 02/21/2023] [Accepted: 02/24/2023] [Indexed: 06/01/2023]
Abstract
In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 μW, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.
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Affiliation(s)
- Teresa Crisci
- Institute of Applied Science and Intelligent Systems “Eduardo Caianiello” (CNR), 80131 Napoli, Italy
- Department of Mathematics and Physics, University of Campania “Luigi Vanvitelli”, 81100 Caserta, Italy
| | - Piera Maccagnani
- Institute for Microelectronics and Microsystems (CNR), 40129 Bologna, Italy
- Department of Physics and Earth Sciences, University of Ferrara, Via Giuseppe Saragat 1/c, 44122 Ferrara, Italy
| | - Luigi Moretti
- Department of Mathematics and Physics, University of Campania “Luigi Vanvitelli”, 81100 Caserta, Italy
| | - Caterina Summonte
- Institute for Microelectronics and Microsystems (CNR), 40129 Bologna, Italy
| | - Mariano Gioffrè
- Institute of Applied Science and Intelligent Systems “Eduardo Caianiello” (CNR), 80131 Napoli, Italy
| | - Rita Rizzoli
- Institute for Microelectronics and Microsystems (CNR), 40129 Bologna, Italy
| | - Maurizio Casalino
- Institute of Applied Science and Intelligent Systems “Eduardo Caianiello” (CNR), 80131 Napoli, Italy
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158
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Characteristics of Graphene Growth at Different Temperatures from the Benzene Ring Structure in Coal Tar. Processes (Basel) 2023. [DOI: 10.3390/pr11020593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/18/2023] Open
Abstract
A large number of aromatic substances can be found in so-called coal tar (containing >10,000 individual compounds), which is a mixture of heavy liquid fractions (dense viscous black liquor, tended to solidification) obtained after the pyrolysis of coal (solid product—coke, gas products, and light liquid products are also produced during the process). Volatile monocyclic aromatic hydrocarbons, which are naturally occurring in coal tar, can be exploited as premium raw materials for the production of graphene by chemical vapor deposition (CVD). Moreover, aromatic chemicals (compounds with benzene rings) can produce graphene at lower temperatures than other small-molecule gas feedstocks (for graphene growth via methane gas, the temperature must be at least 900 °C). The intermediate reaction mechanism involved in the creation of graphene from various temperature ranges of monocyclic aromatic hydrocarbons in benzene ring structures has long been a fascinating enigma. Accordingly, in this paper, we analyze the graphene growth pattern of benzene at different temperatures from 300 to 900 °C. For graphene synthesis in the lower temperature range (300~600 °C), analytical experiments show that benzene rings (almost) do not crack during the gas phase process. Thus, the structure of the benzene ring is directly coupled into graphene in the above temperature range. When benzene is more thoroughly transformed into tiny molecules that are deposited on the surface of copper foil at higher temperatures (700~900 °C), graphene is formed by a complex mixture of carbon sources, including gaseous small molecules (methane and ethane) and benzene. Based on the process above, we provide an alternative solution for the large-scale industrial preparation of graphene, with low energy consumption, via low-temperature synthesis of graphene by the CVD method using the coal tar carbon source at 500 °C, which is the optimal growth temperature of the benzene ring.
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159
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Fenech-Salerno B, Holicky M, Yao C, Cass AEG, Torrisi F. A sprayed graphene transistor platform for rapid and low-cost chemical sensing. NANOSCALE 2023; 15:3243-3254. [PMID: 36723120 DOI: 10.1039/d2nr05838c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We demonstrate a novel and versatile sensing platform, based on electrolyte-gated graphene field-effect transistors, for easy, low-cost and scalable production of chemical sensor test strips. The Lab-on-PCB platform is enabled by low-boiling, low-surface-tension sprayable graphene ink deposited on a substrate manufactured using a commercial printed circuit board process. We demonstrate the versatility of the platform by sensing pH and Na+ concentrations in an aqueous solution, achieving a sensitivity of 143 ± 4 μA per pH and 131 ± 5 μA per log10Na+, respectively, in line with state-of-the-art graphene chemical sensing performance.
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Affiliation(s)
- Benji Fenech-Salerno
- Imperial College London, Department of Chemistry, Molecular Sciences Research Hub, 82 Wood Lane, London W12 0BZ, UK.
| | - Martin Holicky
- Imperial College London, Department of Chemistry, Molecular Sciences Research Hub, 82 Wood Lane, London W12 0BZ, UK.
| | - Chengning Yao
- Imperial College London, Department of Chemistry, Molecular Sciences Research Hub, 82 Wood Lane, London W12 0BZ, UK.
| | - Anthony E G Cass
- Imperial College London, Department of Chemistry, Molecular Sciences Research Hub, 82 Wood Lane, London W12 0BZ, UK.
| | - Felice Torrisi
- Imperial College London, Department of Chemistry, Molecular Sciences Research Hub, 82 Wood Lane, London W12 0BZ, UK.
- Dipartimento di Fisica e Astronomia, Universita' di Catania & CNR-IMM (Catania Università), Via S. Sofia 64, 95123 Catania, Italy
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160
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Zanotto S, Bonatti L, Pantano MF, Mišeikis V, Speranza G, Giovannini T, Coletti C, Cappelli C, Tredicucci A, Toncelli A. Strain-Induced Plasmon Confinement in Polycrystalline Graphene. ACS PHOTONICS 2023; 10:394-400. [PMID: 36820323 PMCID: PMC9936574 DOI: 10.1021/acsphotonics.2c01157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/24/2022] [Indexed: 06/18/2023]
Abstract
Terahertz spectroscopy is a perfect tool to investigate the electronic intraband conductivity of graphene, but a phenomenological model (Drude-Smith) is often needed to describe disorder. By studying the THz response of isotropically strained polycrystalline graphene and using a fully atomistic computational approach to fit the results, we demonstrate here the connection between the Drude-Smith parameters and the microscopic behavior. Importantly, we clearly show that the strain-induced changes in the conductivity originate mainly from the increased separation between the single-crystal grains, leading to enchanced localization of the plasmon excitations. Only at the lowest strain values explored, a behavior consistent with the deformation of the individual grains can instead be observed.
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Affiliation(s)
- Simone Zanotto
- NEST, Istituto Nanoscienze − CNR and Scuola Normale
Superiore, Piazza S. Silvestro 12, Pisa, 56127, Italy
| | - Luca Bonatti
- Scuola
Normale Superiore, Piazza dei Cavalieri 7, Pisa, 56126, Italy
| | - Maria F. Pantano
- Department
of Civil, Environmental and Mechanical Engineering, University of Trento, Via Mesiano 77, Trento, 38123, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza S. Silvestro 12, Pisa, 56127, Italy
| | - Giorgio Speranza
- Centre
for Materials and Microsystems, Fondazione
Bruno Kessler, via Sommarive 18, Trento, I-38123, Italy
| | | | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza S. Silvestro 12, Pisa, 56127, Italy
| | - Chiara Cappelli
- Scuola
Normale Superiore, Piazza dei Cavalieri 7, Pisa, 56126, Italy
| | - Alessandro Tredicucci
- Dipartimento
di Fisica ”E. Fermi” and CISUP, Università di Pisa, and Istituto Nanoscienze - CNR, Largo Pontecorvo 3, Pisa, 56127, Italy
| | - Alessandra Toncelli
- Dipartimento
di Fisica ”E. Fermi” and CISUP, Università di Pisa, and Istituto Nanoscienze - CNR, Largo Pontecorvo 3, Pisa, 56127, Italy
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161
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Kumar A, Chang DW. Towards the Future of Polymeric Hybrids of Two-Dimensional Black Phosphorus or Phosphorene: From Energy to Biological Applications. Polymers (Basel) 2023; 15:polym15040947. [PMID: 36850230 PMCID: PMC9962990 DOI: 10.3390/polym15040947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 02/06/2023] [Accepted: 02/09/2023] [Indexed: 02/17/2023] Open
Abstract
With the advent of a new 2D nanomaterial, namely, black phosphorus (BP) or phosphorene, the scientific community is now dedicated to focusing on and exploring this 2D material offering elusive properties such as a higher carrier mobility, biocompatibility, thickness-dependent band gap, and optoelectronic characteristics that can be harnessed for multiple applications, e.g., nanofillers, energy storage devices, field effect transistors, in water disinfection, and in biomedical sciences. The hexagonal ring of phosphorus atoms in phosphorene is twisted slightly, unlike how it is in graphene. Its unique characteristics, such as a high carrier mobility, anisotropic nature, and biocompatibility, have attracted much attention and generated further scientific curiosity. However, despite these interesting features, the phosphorene or BP poses challenges and causes frustrations when it comes to its stability under ambient conditions and processability, and thus in order to overcome these hurdles, it must be conjugated or linked with the suitable and functional organic counter macromolecule in such a way that its properties are not compromised while providing a protection from air/water that can otherwise degrade it to oxides and acid. The resulting composites/hybrid system of phosphorene and a macromolecule, e.g., a polymer, can outperform and be exploited for the aforementioned applications. These assemblies of a polymer and phosphorene have the potential for shifting the paradigm from exhaustively used graphene to new commercialized products offering multiple applications.
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162
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Yang Y, Zhang Y, Zhang J, Zheng X, Gan Z, Lin H, Hong M, Jia B. Graphene Metamaterial 3D Conformal Coating for Enhanced Light Harvesting. ACS NANO 2023; 17:2611-2619. [PMID: 36533993 DOI: 10.1021/acsnano.2c10529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Silicon (Si) photovoltaic devices present possible avenues for overcoming global energy and environmental challenges. The high reflection and surface recombination losses caused by the Si interface and its nanofabrication process are the main hurdles for pursuing a high energy conversion efficiency. However, recent advances have demonstrated great success in improving device performance via proper Si interface modification with the optical and electrical features of two-dimensional (2D) materials. Firmly integrating large-area 2D materials with 3D Si nanostructures with no gap in between, which is essential for optimizing device performance, has rarely been achieved by any technique due to the complex 3D morphology of the nanostructures. Here we propose the concept of a 3D conformal coating of graphene metamaterials, in which the 2D graphene layers perfectly adapt to the 3D Si curvatures, leading to a universal 20% optical reflection decrease and a 60% surface passivation improvement. In a further application of this metamaterial 3D conformal coating methodology to standard Si solar cells, an overall 23% enhancement of the solar energy conversion efficiency is achieved. The 3D conformal coating strategy could be readily extended to various optoelectronic and semiconductor device systems with peculiar performance, offering a pathway for highly efficient energy-harvesting and storage solutions.
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Affiliation(s)
- Yunyi Yang
- School of Science, Computing and Engineering Technologies, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Yinan Zhang
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
- Centre for Artificial-Intelligence Nanophotonics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, People's Republic of China
| | - Jie Zhang
- Centre for Translational Atomaterials (CTAM), School of Science, Computing and Engineering Technologies, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Xiaorui Zheng
- Centre for Translational Atomaterials (CTAM), School of Science, Computing and Engineering Technologies, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
- School of Engineering, Westlake University, Hangzhou 310024, People's Republic of China
| | - Zhixing Gan
- Centre for Translational Atomaterials (CTAM), School of Science, Computing and Engineering Technologies, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Han Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
| | - Minghui Hong
- School of Aerospace Engineering, Xiamen University, Xiamen 361005, People's Republic of China
| | - Baohua Jia
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
- The Australian Research Council (ARC) Industrial Transformation Training Centre in Surface Engineering for Advanced Materials (SEAM), RMIT University, La Trobe Street, Melbourne, Victoria 3000, Australia
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163
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Kim JY, Ju X, Ang KW, Chi D. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook. ACS NANO 2023; 17:1831-1844. [PMID: 36655854 DOI: 10.1021/acsnano.2c10737] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their immense potential for scientific breakthroughs and technological innovations. While some 2D transition metal dichalcogenides (TMDC) such as MoS2 and WS2 are considered as the ultimate channel materials in unltrascaled transistors as replacements for Si, there has also been increasing interest in the monolithic 3D integration of 2DMs on the Si CMOS platform or in flexible electronics as back-end-of-line transistors, memory devices/selectors, and sensors, taking advantage of 2DM properties such as a high current driving capability with low leakage current, nonvolatile switching characteristics, a large surface-to-volume ratio, and a tunable bandgap. However, the realization of both of these scenarios critically depends on the development of manufacturing-viable high-yield 2DM layers transfer from the growth substrate to the Si, since the growth of high-quality 2DM layers often requires a high-temperature growth process on template substrates. Motivated by this, extensive efforts have been made by the 2DM research community to develop various 2DM layer transfer methods, leveraging the van der Waals transfer capability of the layer-structured 2DMs. These efforts have led to a number of successful demonstrations of wafer-scale 2D TMDC layer transfer, while 2DM-enabled template growth/transfer of some functional bulk materials such as III-V, Ge, and AlN has also been demonstrated. This review surveys and compares different 2DM transfer methods developed recently, with a focus on large-area 2D TMDC film transfer along with an introduction of 2DM template-assisted van der Waals growth/transfer of non-2D thin films. We will also briefly present an outlook of our envisioned multifunctionalities in 3D integrated electronic systems enabled by monolithic 3D integration of 2DMs and III-V via van der Waals transfer and discuss possible technology options for overcoming remaining challenges.
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Affiliation(s)
- Jun-Young Kim
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xin Ju
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Kah-Wee Ang
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
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164
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Rugged bialkali photocathodes encapsulated with graphene and thin metal film. Sci Rep 2023; 13:2412. [PMID: 36765084 PMCID: PMC9918551 DOI: 10.1038/s41598-023-29374-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Accepted: 02/03/2023] [Indexed: 02/12/2023] Open
Abstract
Protection of free-electron sources has been technically challenging due to lack of materials that transmit electrons while preventing corrosive gas molecules. Two-dimensional materials uniquely possess both of required properties. Here, we report three orders of magnitude increase in active pressure and factor of two enhancement in the lifetime of high quantum efficiency (QE) bialkali photocathodes (cesium potassium antimonide (CsK2Sb)) by encapsulating them in graphene and thin nickel (Ni) film. The photoelectrons were extracted through the graphene protection layer in a reflection mode, and we achieved QE of ~ 0.17% at ~ 3.4 eV, 1/e lifetime of 188 h with average current of 8.6 nA under continuous illumination, and no decrease of QE at the pressure of as high as ~ 1 × 10-3 Pa. In comparison, the QE decreased drastically at 10-6 Pa for bare, non-protected CsK2Sb photocathodes and their 1/e lifetime under continuous illumination was ~ 48 h. We attributed the improvements to the gas impermeability and photoelectron transparency of graphene.
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165
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Qu J, Li S, Zhong B, Deng Z, Shu Y, Yang X, Cai Y, Hu J, Li CM. Two-dimensional nanomaterials: synthesis and applications in photothermal catalysis. NANOSCALE 2023; 15:2455-2469. [PMID: 36655847 DOI: 10.1039/d2nr06092b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Photothermal catalysis, as one of the emerging technologies with synergistic effects of photochemistry and thermochemistry, is highly attractive in the fields of environment and energy. Two-dimensional (2D) nanomaterials have received extensive attention toward photothermal catalysis because of their ultrathin layer structures, superior physical and optical properties, and high surface areas. These merits are beneficial for shortening the transfer distance of charge carriers, improving the efficiency of solar to thermal, and providing a great opportunity for the development of photothermal chemistry. In this review, we have summarized the state-of-art advances in various 2D nanomaterials with emphasis on the driving force and relevant mechanism of photothermal catalysis, including the involved three types, namely, localized surface plasmonic resonance (LSPR), nonradiative relaxation, and thermal vibrations of molecules. Moreover, the synthesis strategies of 2D materials and their photothermal applications in carbon dioxide (CO2) conversion, hydrogen (H2) production, volatile organic compounds (VOCs) degradation, and water (H2O) purification have been discussed in detail. Ultimately, the existing challenges and prospects of future development in the field are proposed. It is believed that this review will afford a great reference for the exploration of the high-efficiency 2D nanomaterials and their structure-activity relationship.
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Affiliation(s)
- Jiafu Qu
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
| | - Songqi Li
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
| | - Bailing Zhong
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
| | - Zhiyuan Deng
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
| | - Yinying Shu
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
| | - Xiaogang Yang
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
| | - Yahui Cai
- College of Materials Science and Engineering, Nanjing Forestry University, No. 159 Longpan Road, Nanjing, 210037, P.R. China
| | - Jundie Hu
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
| | - Chang Ming Li
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China.
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166
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Lu CH, Shang KM, Lee SR, Leu CM, Tai YC, Yeh NC. Low-Temperature Direct Growth of Nanocrystalline Multilayer Graphene on Silver with Long-Term Surface Passivation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9883-9891. [PMID: 36752517 PMCID: PMC9951176 DOI: 10.1021/acsami.2c21809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Accepted: 01/27/2023] [Indexed: 06/18/2023]
Abstract
A wide variety of transition metals, including copper and gold, have been successfully used as substrates for graphene growth. On the other hand, it has been challenging to grow graphene on silver, so realistic applications by combining graphene and silver for improved electrode stability and enhanced surface plasmon resonance in organic light-emitting diodes and biosensing have not been realized to date. Here, we demonstrate the surface passivation of silver through the single-step rapid growth of nanocrystalline multilayer graphene on silver via low-temperature plasma-enhanced chemical vapor deposition (PECVD). The effect of the growth time on the graphene quality and the underlying silver characteristics is investigated by Raman spectroscopy, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and cross-sectional annular dark-field scanning transmission electron microscopy (ADF-STEM). These results reveal nanocrystalline graphene structures with turbostratic layer stacking. Based on the XPS and ADF-STEM results, a PECVD growth mechanism of graphene on silver is proposed. The multilayer graphene also provides excellent long-term protection of the underlying silver surface from oxidation after 5 months of air exposure. This development thus paves the way toward realizing technological applications based on graphene-protected silver surfaces and electrodes as well as hybrid graphene-silver plasmonics.
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Affiliation(s)
- Chen-Hsuan Lu
- Department
of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Kuang-Ming Shang
- Department
of Medical Engineering, California Institute
of Technology, Pasadena, California 91125, United States
| | - Shi-Ri Lee
- Department
of Electron Microscopy Development and Application, Division of Platform
Technology for Advanced Materials, Material and Chemical Research
Laboratories, Industrial Technology Research
Institute, Hsinchu 31057, Taiwan
| | - Chyi-Ming Leu
- Material
and Chemical Research Laboratories, Industrial
Technology Research Institute, Hsinchu 31057, Taiwan
| | - Yu-Chong Tai
- Department
of Medical Engineering, California Institute
of Technology, Pasadena, California 91125, United States
- Department
of Electrical Engineering, California Institute
of Technology, Pasadena, California 91125, United States
| | - Nai-Chang Yeh
- Department
of Physics, California Institute of Technology, Pasadena, California 91125, United States
- Department
of Physics, National Taiwan Normal University, Taipei
City 106, Taiwan
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167
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Lee KR, Seo J, Kwon SS, Kim N, Lee YJ, Son JG, Lee SH. Vibroacoustic Characteristics of a Specific Patterned Polymer with Graphene for an Electrostatic Speaker. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7319-7328. [PMID: 36701764 DOI: 10.1021/acsami.2c15921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Graphene/polymer actuators were developed using bilayer graphene and various polymer substrates for use as transparent, flexible, and robust electrostatic speaker units. Additionally, a resonant frequency shift was induced using a polymer substrate on which various micropatterns were transferred to boost bass. The total sound pressure level (SPL) in the graphene/polymer actuator was measured by a sweep, and the frequency of the spectrum was confirmed to be one-third that of the octave band frequency. The change in the vibroacoustic characteristic with changes in Young's modulus and density was studied for the polymers of the same size and thickness. Particularly, the possibility of boosting bass was confirmed by inducing a resonant frequency shift and increasing the total SPL by adding micropatterns on a polymer substrate under the same conditions. The resonance frequency of 523 Hz and the SPL of 54 dBA in flat polymer film became 296 Hz and 69 dBA in a specific pattern, which produced a sound of >15 dB based on the same flat polymer. We expect that the design and information provided herein can provide the key parameters required to change the resonant frequency in small-size devices for the application of graphene/polymer thin-film actuators.
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Affiliation(s)
- Kyoung-Ryul Lee
- Center for Biomicrosystems, Brain Science Institute, Korea Institute of Science and Technology, Seoul02792, Korea
| | - Jaemin Seo
- Center for Biomicrosystems, Brain Science Institute, Korea Institute of Science and Technology, Seoul02792, Korea
| | - Sun Sang Kwon
- Center for Biomicrosystems, Brain Science Institute, Korea Institute of Science and Technology, Seoul02792, Korea
| | - Namyun Kim
- Center for Biomicrosystems, Brain Science Institute, Korea Institute of Science and Technology, Seoul02792, Korea
| | - Yi Jae Lee
- Center for Biomicrosystems, Brain Science Institute, Korea Institute of Science and Technology, Seoul02792, Korea
| | - Jeong Gon Son
- Soft Hybrid Materials Research Center, Advanced Materials Research Division, Korea Institute of Science and Technology, Seoul02792, Korea
| | - Soo Hyun Lee
- Center for Biomicrosystems, Brain Science Institute, Korea Institute of Science and Technology, Seoul02792, Korea
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168
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Smith K, Retallick A, Melendrez D, Vijayaraghavan A, Heil M. Modeling Graphene-Polymer Heterostructure MEMS Membranes with the Föppl-von Kármán Equations. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9853-9861. [PMID: 36748982 PMCID: PMC9951177 DOI: 10.1021/acsami.2c21096] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Accepted: 01/26/2023] [Indexed: 06/18/2023]
Abstract
Ultra-thin graphene-based membranes have shown significant promise for high-performance nano-electro-mechanical (NEMS) devices. The key challenge in the modeling of such membranes is that they often operate in deflection regimes where the assumptions or approximations of "pure bending" or "pure stretching" are not satisfied. We present a model of graphene-polymer heterostructure (GPH) NEMS membranes based on Föppl-von Kármán (FvK) equations which take into account both bending and stretching forces. The experimental GPH membrane shape obtained through atomic force microscopy topography mapping is compared to the inflation shapes predicted by FvK-based finite element method simulation, and they show excellent agreement with each other. When the GPH membranes are deflected under pressure in a capacitive pressure sensor configuration, the effectiveness of this model is further exemplified through accurately predicting the capacitance change of deflecting GPH membrane devices at varying pressures. This model serves as a powerful new tool in the design and development of graphene-based NEMS devices, being able to predict the performance of graphene NEMS devices or to aid in the design of device geometries to match required performances.
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Affiliation(s)
- Katherine Smith
- Department
of Materials and National Graphene Institute, The University of Manchester, ManchesterM13 9PL, U.K.
| | - Aidan Retallick
- Department
of Mathematics, The University of Manchester, ManchesterM13 9PL, U.K.
| | - Daniel Melendrez
- Department
of Materials and National Graphene Institute, The University of Manchester, ManchesterM13 9PL, U.K.
| | - Aravind Vijayaraghavan
- Department
of Materials and National Graphene Institute, The University of Manchester, ManchesterM13 9PL, U.K.
| | - Matthias Heil
- Department
of Mathematics, The University of Manchester, ManchesterM13 9PL, U.K.
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169
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Jiang C, Chen L, Wang H, Chen C, Wang X, Kong Z, Wang Y, Wang H, Xie X. Increasing coverage of mono-layer graphene grown on hexagonal boron nitride. NANOTECHNOLOGY 2023; 34:165601. [PMID: 36669199 DOI: 10.1088/1361-6528/acb4f5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 01/20/2023] [Indexed: 06/17/2023]
Abstract
Graphene sitting on hexagonal boron nitride (h-BN) always exhibits excellent electrical properties. And the properties of graphene onh-BN are often dominated by its domain size and boundaries. Chemical vapor deposition (CVD) is a promising approach to achieve large size graphene crystal. However, the CVD growth of graphene onh-BN still faces challenges in increasing coverage of monolayer graphene because of a weak control on nucleation and vertical growth. Here, an auxiliary source strategy is adapted to increase the nucleation density of graphene onh-BN and synthesis continuous graphene films. It is found that both silicon carbide and organic polymer e.g. methyl methacrylate can assist the nucleation of graphene, and then increases the coverage of graphene onh-BN. By optimizing the growth temperature, vertical accumulation of graphitic materials can be greatly suppressed. This work provides an effective approach for preparing continuous graphene film onh-BN, and may bring a new sight for the growth of high quality graphene.
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Affiliation(s)
- Chengxin Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lingxiu Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, People's Republic of China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiujun Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ziqiang Kong
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yibo Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, People's Republic of China
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170
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Li M, Yin B, Gao C, Guo J, Zhao C, Jia C, Guo X. Graphene: Preparation, tailoring, and modification. EXPLORATION (BEIJING, CHINA) 2023; 3:20210233. [PMID: 37323621 PMCID: PMC10190957 DOI: 10.1002/exp.20210233] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2021] [Accepted: 07/05/2022] [Indexed: 06/17/2023]
Abstract
Graphene is a 2D material with fruitful electrical properties, which can be efficiently prepared, tailored, and modified for a variety of applications, particularly in the field of optoelectronic devices thanks to its planar hexagonal lattice structure. To date, graphene has been prepared using a variety of bottom-up growth and top-down exfoliation techniques. To prepare high-quality graphene with high yield, a variety of physical exfoliation methods, such as mechanical exfoliation, anode bonding exfoliation, and metal-assisted exfoliation, have been developed. To adjust the properties of graphene, different tailoring processes have been emerged to precisely pattern graphene, such as gas etching and electron beam lithography. Due to the differences in reactivity and thermal stability of different regions, anisotropic tailoring of graphene can be achieved by using gases as the etchant. To meet practical requirements, further chemical functionalization at the edge and basal plane of graphene has been extensively utilized to modify its properties. The integration and application of graphene devices is facilitated by the combination of graphene preparation, tailoring, and modification. This review focuses on several important strategies for graphene preparation, tailoring, and modification that have recently been developed, providing a foundation for its potential applications.
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Affiliation(s)
- Mingyao Li
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular EngineeringPeking UniversityBeijingChina
| | - Bing Yin
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular EngineeringPeking UniversityBeijingChina
| | - Chunyan Gao
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
| | - Jie Guo
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
| | - Cong Zhao
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
| | - Chuancheng Jia
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular EngineeringPeking UniversityBeijingChina
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
| | - Xuefeng Guo
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular EngineeringPeking UniversityBeijingChina
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
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171
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Naclerio AE, Kidambi PR. A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207374. [PMID: 36329667 DOI: 10.1002/adma.202207374] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.
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Affiliation(s)
- Andrew E Naclerio
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| | - Piran R Kidambi
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, 37212, USA
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172
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Kenaz R, Rapaport R. Mapping spectroscopic micro-ellipsometry with sub-5 microns lateral resolution and simultaneous broadband acquisition at multiple angles. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2023; 94:023908. [PMID: 36859011 DOI: 10.1063/5.0123249] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 01/29/2023] [Indexed: 06/18/2023]
Abstract
Spectroscopic ellipsometry is a widely used optical technique in both industry and research for determining the optical properties and thickness of thin films. The effective use of spectroscopic ellipsometry on micro-structures is inhibited by technical limitations on the lateral resolution and data acquisition rate. Here, we introduce a spectroscopic micro-ellipsometer (SME), capable of recording spectrally resolved ellipsometric data simultaneously at multiple angles of incidence in a single measurement of a few seconds, with a lateral resolution down to 2 μm in the visible spectral range. The SME can be easily integrated into generic optical microscopes by the addition of a few standard optical components. We demonstrate complex refractive index and thickness measurements by using the SME, which are in excellent agreement with a commercial spectroscopic ellipsometer. The high lateral resolution is displayed by complex refractive index and thickness maps over micron-scale areas. As an application for its accuracy and high lateral resolution, the SME can characterize the optical properties and number of layers of exfoliated transition-metal dichalcogenides and graphene, for structures that are a few microns in size.
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Affiliation(s)
- Ralfy Kenaz
- Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel
| | - Ronen Rapaport
- Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel
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173
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Biroju RK, Marepally BC, Malik P, Dhara S, Gengan S, Maity D, Narayanan TN, Giri PK. Defective Graphene/Plasmonic Nanoparticle Hybrids for Surface-Enhanced Raman Scattering Sensors. ACS OMEGA 2023; 8:4344-4356. [PMID: 36743051 PMCID: PMC9893265 DOI: 10.1021/acsomega.2c07706] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Accepted: 01/04/2023] [Indexed: 06/18/2023]
Abstract
Two-dimensional-zero-dimensional plasmonic hybrids involving defective graphene and transition metals (DGR-TM) have drawn significant interest due to their near-field plasmonic effects in the wide range of the UV-vis-NIR spectrum. In the present work, we carried out extensive investigations on resonance Raman spectroscopy (RRS) and localized surface plasmon resonance (LSPR) from the various DGR-TM hybrids (Au, Ag, and Cu) using micro-Raman, spatial Raman mapping analysis, high-resolution transmission electron microscopy (HRTEM), and LSPR absorption measurements on defective CVD graphene layers. Further, electric field (E) mappings of samples were calculated using the finite domain time difference (FDTD) method to support the experimental findings. The spatial distribution of various in-plane and edge defects and defect-mediated interaction of plasmonic nanoparticles (NPs) with graphene were investigated on the basis of the RRS and LSPR and correlated with the quantitative analysis from HRTEM, excitation wavelength-dependent micro-Raman, and E-field enhancement features of defective graphene and defective graphene-Au hybrids before and after rapid thermal annealing (RTA). Excitation wavelength-dependent surface-enhanced Raman scattering (SERS) and LSPR-induced broadband absorption from DGR-Au plasmonic hybrids reveal the electron and phonon interaction on the graphene surface, which leads to the charge transfer from TM NPs to graphene. This is believed to be responsible for the reduction in the SERS signal, which was observed from the wavelength-dependent Raman spectroscopy/mappings. We implemented defective graphene and DGR-Au plasmonic hybrids as efficient SERS sensors to detect the Fluorescein and Rhodamine 6G molecules with a detection limit down to 10-9 M. Defective graphene and Au plasmonic hybrids showed an impressive Raman enhancement in the order of 108, which is significant for its practical application.
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Affiliation(s)
- Ravi K. Biroju
- Centre
for Nanotechnology, Indian Institute of
Technology Guwahati, Guwahati, Assam 781039, India
- School
of Advanced Sciences−Division of Physics, Vellore Institute of Technology, Vandalur−Kelambakkam Road Chennai, Chennai, Tamil Nadu 600127, India
| | | | - Pariksha Malik
- Nanostech
Laboratory, Department of Physics, Indian
Institute of Technology Delhi, New Delhi 110016, India
| | - Soumen Dhara
- School
of Applied Sciences, Kalinga Institute of
Industrial Technology, Bhubaneswar 751024, India
| | - Saravanan Gengan
- Department
of Chemistry, Saveetha School of Engineering, Saveetha Institute of
Medical and Technical Sciences, Saveetha
University, Chennai, Tamilnadu 602105, India
| | - Dipak Maity
- Surface
Science and Interface Engineering Group, Tata Institute of Fundamental Research Hyderabad, Sy. No. 36/P, Serilingampally Mandal,
Gopanpally Village, Hyderabad 500 107, India
| | - Tharangattu N. Narayanan
- Surface
Science and Interface Engineering Group, Tata Institute of Fundamental Research Hyderabad, Sy. No. 36/P, Serilingampally Mandal,
Gopanpally Village, Hyderabad 500 107, India
| | - Pravat K. Giri
- Centre
for Nanotechnology, Indian Institute of
Technology Guwahati, Guwahati, Assam 781039, India
- Department
of Physics, Indian Institute of Technology
Guwahati, Guwahati, Assam 781039, India
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174
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Dehnou KH, Norouzi GS, Majidipour M. A review: studying the effect of graphene nanoparticles on mechanical, physical and thermal properties of polylactic acid polymer. RSC Adv 2023; 13:3976-4006. [PMID: 36756574 PMCID: PMC9891084 DOI: 10.1039/d2ra07011a] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2022] [Accepted: 01/11/2023] [Indexed: 01/28/2023] Open
Abstract
Polylactic acid (PLA) is a linear aliphatic polyester thermoplastic made from renewable sources such as sugar beet and cornstarch. Methods of preparation of polylactic acid are biological and chemical. The advantages of polylactic acid are biocompatibility, easily processing, low energy loss, transparency, high strength, resistance to water and fat penetration and low consumption of carbon dioxide during production. However, polylactic acid has disadvantages such as hydrophobicity, fragility at room temperature, low thermal resistance, slow degradation rate, permeability to gases, lack of active groups and chemical neutrality. To overcome the limitations of PLA, such as low thermal stability and inability to absorb gases, nanoparticles such as graphene are added to improve its properties. Extensive research has been done on the introduction of graphene nanoparticles in PLA, and all of these studies have been studied. In this study, we intend to study a comprehensive study of the effect of graphene nanoparticles on the mechanical, thermal, structural and rheological properties of PLA/Gr nanocomposites and also the effect of UV rays on the mechanical properties of PLA/Gr nanocomposites.
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Affiliation(s)
- Kianoush Hatami Dehnou
- Department of Materials Science and Engineering, School of Engineering, Shiraz University Shiraz Iran
| | - Ghazal Saki Norouzi
- Chemical Engineering Department, Faculty of Engineering, Razi University Iran
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175
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Memisoglu G, Murugesan RC, Zubia J, Rozhin AG. Graphene Nanocomposite Membranes: Fabrication and Water Treatment Applications. MEMBRANES 2023; 13:membranes13020145. [PMID: 36837648 PMCID: PMC9965488 DOI: 10.3390/membranes13020145] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 01/14/2023] [Accepted: 01/18/2023] [Indexed: 05/31/2023]
Abstract
Graphene, a two-dimensional hexagonal honeycomb carbon structure, is widely used in membrane technologies thanks to its unique optical, electrical, mechanical, thermal, chemical and photoelectric properties. The light weight, mechanical strength, anti-bacterial effect, and pollution-adsorption properties of graphene membranes are valuable in water treatment studies. Incorporation of nanoparticles like carbon nanotubes (CNTs) and metal oxide into the graphene filtering nanocomposite membrane structure can provide an improved photocatalysis process in a water treatment system. With the rapid development of graphene nanocomposites and graphene nanocomposite membrane-based acoustically supported filtering systems, including CNTs and visible-light active metal oxide photocatalyst, it is necessary to develop the researches of sustainable and environmentally friendly applications that can lead to new and groundbreaking water treatment systems. In this review, characteristic properties of graphene and graphene nanocomposites are examined, various methods for the synthesis and dispersion processes of graphene, CNTs, metal oxide and polymer nanocomposites and membrane fabrication and characterization techniques are discussed in details with using literature reports and our laboratory experimental results. Recent membrane developments in water treatment applications and graphene-based membranes are reviewed, and the current challenges and future prospects of membrane technology are discussed.
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Affiliation(s)
- Gorkem Memisoglu
- Department of Communications Engineering, Escuela de Ingeniería de Bilbao, University of the Basque Country (UPV/EHU), E-48013 Bilbao, Spain
- Department of Electronics Technology, Istiklal University, Kahramanmaras 46300, Türkiye
| | | | - Joseba Zubia
- Department of Communications Engineering, Escuela de Ingeniería de Bilbao, University of the Basque Country (UPV/EHU), E-48013 Bilbao, Spain
| | - Aleksey G. Rozhin
- Aston Institute of Photonic Technologies, Aston University, Birmingham B4 7ET, UK
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176
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Zhu X, He J, Liu W, Zheng Y, Sheng C, Luo Y, Li S, Zhang R, Chu J. Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS 2 Schottky Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:2468-2478. [PMID: 36583673 DOI: 10.1021/acsami.2c20100] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Stacking two dimensional tunneling heterostructures has always been an important strategy to improve the optoelectronic device performance. However, there are still many disputes about the blocking ability of monolayer (1L-) h-BN on the interlayer coupling. Graphene/h-BN/MoS2 optoelectronic devices have been reported for superior device results. In this study, starting with graphene/h-BN/MoS2 heterostructures, we report experimental evidence of 1L-h-BN barrier layer modulation effects about the electronic band structures and exciton properties. We find that 1L-h-BN insertion only partially blocks the interlayer carrier transfer. In the meantime, the 1L-h-BN barrier layer weakens the interlayer coupling effect, by decreasing the efficient dielectric screening and releasing the quantum confinement. Consequently, the optical conductivity and plasmon excitation slightly improve, and the electronic band structures remain unchanged in graphene/h-BN/MoS2, explaining their fascinating optoelectronic responses. Moreover, the excitonic binding energies of graphene/h-BN/MoS2 redshift with respect to the graphene/MoS2 counterparts. Our results, as well as the broadband optical constants, will help better understand the h-BN barrier layers, facilitating the developing progress of h-BN-based tunneling optoelectronic devices.
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Affiliation(s)
- Xudan Zhu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan University, Shanghai200433, China
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun130033, China
| | - Junbo He
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
| | - Weiming Liu
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
| | - Yuxiang Zheng
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
| | - Chuanxiang Sheng
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
| | - Yi Luo
- Microsystem and Terahertz Research Center, Chengdu610200, China
| | - Shaojuan Li
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun130033, China
| | - Rongjun Zhang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan University, Shanghai200433, China
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
- Academy for Engineering & Technology, Fudan University, Shanghai200433, China
| | - Junhao Chu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan University, Shanghai200433, China
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177
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Zheng H, Zhang R, Xu Q, Kong X, Sun W, Fu Y, Wu M, Liu K. Fabrication of Cu/Al/Cu Laminated Composites Reinforced with Graphene by Hot Pressing and Evaluation of Their Electrical Conductivity. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16020622. [PMID: 36676359 PMCID: PMC9866027 DOI: 10.3390/ma16020622] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 01/06/2023] [Accepted: 01/06/2023] [Indexed: 05/27/2023]
Abstract
Metal laminated composites are widely used in industrial and commercial applications due to their excellent overall performance. In this study, the copper/graphene-aluminum-copper/graphene (Cu/Gr-Al-Cu/Gr) laminated composites were prepared by ingenious hot pressing design. Raman, optical microscope (OM), scanning electron microscope (SEM), van der Pauw (vdP), and X-Ray Diffractometer (XRD) were used to investigate the graphene status, interface bonding, diffusion layer thickness, electrical conductivity, Miller indices and secondary phases, respectively. The results demonstrate that the Cu-Al interfaces in the Cu/Gr-Al-Cu/Gr composites were free of pores, cracks and other defects and bonded well. The number of graphene layers was varied by regulating the thickness of the Cu/Gr layer, with the Cu/Gr foils fabricated by chemical vapor deposition (CVD). The electrical conductivity of the composite was significantly improved by the induced high-quality interfaces Cu/Gr structure. The increased number of graphene layers is beneficial for enhancing the electrical conductivity of the Cu/Gr-Al-Cu/Gr composite, and the highest conductivity improved by 20.5% compared to that of raw Al.
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Affiliation(s)
- Hang Zheng
- Songshan Lake Material Laboratory, Dongguan 523808, China
- College of Mechanical and Electrical Engineering, Henan University of Technology, Zhengzhou 450001, China
| | - Ruixiang Zhang
- Songshan Lake Material Laboratory, Dongguan 523808, China
| | - Qin Xu
- College of Mechanical and Electrical Engineering, Henan University of Technology, Zhengzhou 450001, China
| | - Xiangqing Kong
- Songshan Lake Material Laboratory, Dongguan 523808, China
| | - Wanting Sun
- Songshan Lake Material Laboratory, Dongguan 523808, China
| | - Ying Fu
- Songshan Lake Material Laboratory, Dongguan 523808, China
| | - Muhong Wu
- Songshan Lake Material Laboratory, Dongguan 523808, China
- State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, China
| | - Kaihui Liu
- Songshan Lake Material Laboratory, Dongguan 523808, China
- State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, China
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178
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Burton OJ, Winter Z, Watanabe K, Taniguchi T, Beschoten B, Stampfer C, Hofmann S. Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene. ACS NANO 2023; 17:1229-1238. [PMID: 36594782 PMCID: PMC9878973 DOI: 10.1021/acsnano.2c09253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/16/2022] [Accepted: 12/15/2022] [Indexed: 06/17/2023]
Abstract
Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a challenge due to the vast, interconnected parameter space. We introduce a fast-screening descriptor approach to demonstrate holistic data-driven optimization across the entirety of process steps for the graphene-Cu model system. We map the crystallographic dependences of graphene chemical vapor deposition, interfacial Cu oxidation to decouple graphene, and its dry delamination across inverse pole figures. Their overlay enables us to identify hitherto unexplored (168) higher index Cu orientations as overall optimal orientations. We show the effective preparation of such Cu orientations via epitaxial close-space sublimation and achieve mechanical transfer with a very high yield (>95%) and quality of graphene domains, with room-temperature electron mobilities in the range of 40000 cm2/(V s). Our approach is readily adaptable to other descriptors and 2D material systems, and we discuss the opportunities of such a holistic optimization.
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Affiliation(s)
- Oliver J. Burton
- Department
of Engineering, University of Cambridge, CambridgeCB3 0FA, United Kingdom
| | - Zachary Winter
- 2nd
Institute of Physics A and JARA-FIT, RWTH
Aachen University, 52074Aachen, Germany
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki305-0044, Japan
| | - Bernd Beschoten
- 2nd
Institute of Physics A and JARA-FIT, RWTH
Aachen University, 52074Aachen, Germany
| | - Christoph Stampfer
- 2nd
Institute of Physics A and JARA-FIT, RWTH
Aachen University, 52074Aachen, Germany
- Peter
Grünberg Institute (PGI-9), Forschungszentrum
Jülich, 52425Jülich, Germany
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, CambridgeCB3 0FA, United Kingdom
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179
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Barhoumi M, Bouzidi S, Sfina N, Bouelnor GAA. First-principles calculations to investigate electronic and optical properties of Ti 4GaPbX 2 (X = C or N) two-dimensional materials. Chem Phys 2023. [DOI: 10.1016/j.chemphys.2022.111728] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
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180
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Mahalingam S, Omar A, Manap A, Rahim NA. Synthesis and applications of carbon-polymer composites and nanocomposite functional materials. FUNCTIONAL MATERIALS FROM CARBON, INORGANIC, AND ORGANIC SOURCES 2023:71-105. [DOI: 10.1016/b978-0-323-85788-8.00020-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
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181
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Jayaramulu K, Mukherjee S, Morales DM, Dubal DP, Nanjundan AK, Schneemann A, Masa J, Kment S, Schuhmann W, Otyepka M, Zbořil R, Fischer RA. Graphene-Based Metal-Organic Framework Hybrids for Applications in Catalysis, Environmental, and Energy Technologies. Chem Rev 2022; 122:17241-17338. [PMID: 36318747 PMCID: PMC9801388 DOI: 10.1021/acs.chemrev.2c00270] [Citation(s) in RCA: 42] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Abstract
Current energy and environmental challenges demand the development and design of multifunctional porous materials with tunable properties for catalysis, water purification, and energy conversion and storage. Because of their amenability to de novo reticular chemistry, metal-organic frameworks (MOFs) have become key materials in this area. However, their usefulness is often limited by low chemical stability, conductivity and inappropriate pore sizes. Conductive two-dimensional (2D) materials with robust structural skeletons and/or functionalized surfaces can form stabilizing interactions with MOF components, enabling the fabrication of MOF nanocomposites with tunable pore characteristics. Graphene and its functional derivatives are the largest class of 2D materials and possess remarkable compositional versatility, structural diversity, and controllable surface chemistry. Here, we critically review current knowledge concerning the growth, structure, and properties of graphene derivatives, MOFs, and their graphene@MOF composites as well as the associated structure-property-performance relationships. Synthetic strategies for preparing graphene@MOF composites and tuning their properties are also comprehensively reviewed together with their applications in gas storage/separation, water purification, catalysis (organo-, electro-, and photocatalysis), and electrochemical energy storage and conversion. Current challenges in the development of graphene@MOF hybrids and their practical applications are addressed, revealing areas for future investigation. We hope that this review will inspire further exploration of new graphene@MOF hybrids for energy, electronic, biomedical, and photocatalysis applications as well as studies on previously unreported properties of known hybrids to reveal potential "diamonds in the rough".
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Affiliation(s)
- Kolleboyina Jayaramulu
- Department
of Chemistry, Indian Institute of Technology
Jammu, Jammu
and Kashmir 181221, India,Regional
Centre of Advanced Technologies and Materials, Czech Advanced Technology
and Research Institute (CATRIN), Palacký
University Olomouc, Šlechtitelů 27, Olomouc 783 71, Czech Republic,
| | - Soumya Mukherjee
- Inorganic
and Metal−Organic Chemistry, Department of Chemistry and Catalysis
Research Centre, Technical University of
Munich, Garching 85748, Germany
| | - Dulce M. Morales
- Analytical
Chemistry, Center for Electrochemical Sciences (CES), Faculty of Chemistry
and Biochemistry, Ruhr-Universität
Bochum, Universitätsstrasse 150, Bochum D-44780, Germany,Nachwuchsgruppe
Gestaltung des Sauerstoffentwicklungsmechanismus, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, Berlin 14109, Germany
| | - Deepak P. Dubal
- School
of Chemistry and Physics, Queensland University
of Technology (QUT), 2 George Street, Brisbane, Queensland 4001, Australia
| | - Ashok Kumar Nanjundan
- School
of Chemistry and Physics, Queensland University
of Technology (QUT), 2 George Street, Brisbane, Queensland 4001, Australia
| | - Andreas Schneemann
- Lehrstuhl
für Anorganische Chemie I, Technische
Universität Dresden, Bergstrasse 66, Dresden 01067, Germany
| | - Justus Masa
- Max
Planck Institute for Chemical Energy Conversion, Stiftstrasse 34−36, Mülheim an der Ruhr D-45470, Germany
| | - Stepan Kment
- Regional
Centre of Advanced Technologies and Materials, Czech Advanced Technology
and Research Institute (CATRIN), Palacký
University Olomouc, Šlechtitelů 27, Olomouc 783 71, Czech Republic,Nanotechnology
Centre, CEET, VŠB-Technical University
of Ostrava, 17 Listopadu
2172/15, Ostrava-Poruba 708 00, Czech Republic
| | - Wolfgang Schuhmann
- Analytical
Chemistry, Center for Electrochemical Sciences (CES), Faculty of Chemistry
and Biochemistry, Ruhr-Universität
Bochum, Universitätsstrasse 150, Bochum D-44780, Germany
| | - Michal Otyepka
- Regional
Centre of Advanced Technologies and Materials, Czech Advanced Technology
and Research Institute (CATRIN), Palacký
University Olomouc, Šlechtitelů 27, Olomouc 783 71, Czech Republic,IT4Innovations, VŠB-Technical University of Ostrava, 17 Listopadu 2172/15, Ostrava-Poruba 708 00, Czech Republic
| | - Radek Zbořil
- Regional
Centre of Advanced Technologies and Materials, Czech Advanced Technology
and Research Institute (CATRIN), Palacký
University Olomouc, Šlechtitelů 27, Olomouc 783 71, Czech Republic,Nanotechnology
Centre, CEET, VŠB-Technical University
of Ostrava, 17 Listopadu
2172/15, Ostrava-Poruba 708 00, Czech Republic,
| | - Roland A. Fischer
- Inorganic
and Metal−Organic Chemistry, Department of Chemistry and Catalysis
Research Centre, Technical University of
Munich, Garching 85748, Germany,
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182
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Yin H, Gao X, Liu J, Chen P. Synthesis of N-Doped Few-Layer Graphene through Shock-Induced Carbon Fixation from CO 2. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:109. [PMID: 36616019 PMCID: PMC9824553 DOI: 10.3390/nano13010109] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 12/22/2022] [Accepted: 12/22/2022] [Indexed: 06/17/2023]
Abstract
In this study, graphene and N-doped graphene nanosheets were synthesized through the shock-induced reduction of CO2 using a cylindrical shock-loading apparatus. The mixture of solid CO2 and Mg powder was filled in the pre-cooled sample tube and then impacted by a shock-driven cylindrical flyer tube. The impact generated a shockwave that propagated into the mixed precursor, inducing a chemical reaction between CO2 and Mg at a high shock pressure and high shock temperature. The recovered black powders were characterized via various techniques, confirming the presences of few-layer graphene. The mechanism is carefully shown to be that CO2 was reduced by Mg to form few-layer graphene under shock-induced high pressure and high temperature. By adding carbamide as an N source, this synthetic route was also applied to synthesize N-doped graphene nanosheets. Moreover, the yield and mass of the graphene materials in this study are up to 40% and 0.5 g, respectively. This study showed an efficient and easy-to-scale-up route to prepare few-layer graphene and N-doped few-layer graphene through shock synthesis.
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Affiliation(s)
- Hao Yin
- Institute of Systems Engineering, China Academy of Engineering Physics, Mianyang 612900, China
| | - Xin Gao
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, China
- Advanced Technology Research Institute, Beijing Institute of Technology, Jinan 250307, China
| | - Jianjun Liu
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Pengwan Chen
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, China
- Advanced Technology Research Institute, Beijing Institute of Technology, Jinan 250307, China
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183
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Liu N, Wang HW. Better Cryo-EM Specimen Preparation: How to Deal with the Air-Water Interface? J Mol Biol 2022; 435:167926. [PMID: 36563741 DOI: 10.1016/j.jmb.2022.167926] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Revised: 12/08/2022] [Accepted: 12/14/2022] [Indexed: 12/24/2022]
Abstract
Cryogenic electron microscopy (cryo-EM) is now one of the most powerful and widely used methods to determine high-resolution structures of macromolecules. A major bottleneck of cryo-EM is to prepare high-quality vitrified specimen, which still faces many practical challenges. During the conventional vitrification process, macromolecules tend to adsorb at the air-water interface (AWI), which is known unfriendly to biological samples. In this review, we outline the nature of AWI and the problems caused by it, such as unpredictable or uneven particle distribution, protein denaturation, dissociation of complex and preferential orientation. We review and discuss the approaches and underlying mechanisms to deal with AWI: 1) Additives, exemplified by detergents, forming a protective layer at AWI and thus preserving the native folds of target macromolecules. 2) Fast vitrification devices based on the idea to freeze in-solution macromolecules before their touching of AWI. 3) Thin layer of continuous supporting films to adsorb macromolecules, and when functionalized with affinity ligands, to specifically anchor the target particles away from the AWI. Among these supporting films, graphene, together with its derivatives, with negligible background noise and mechanical robustness, has emerged as a new generation of support. These strategies have been proven successful in various cases and enable us a better handling of the problems caused by the AWI in cryo-EM specimen preparation.
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Affiliation(s)
- Nan Liu
- Ministry of Education Key Laboratory of Protein Sciences, Beijing Advanced Innovation Center for Structural Biology, Beijing Frontier Research Center for Biological Structures, School of Life Sciences, Tsinghua University, Beijing 100084, China
| | - Hong-Wei Wang
- Ministry of Education Key Laboratory of Protein Sciences, Beijing Advanced Innovation Center for Structural Biology, Beijing Frontier Research Center for Biological Structures, School of Life Sciences, Tsinghua University, Beijing 100084, China; Tsinghua-Peking Joint Center for Life Sciences, Tsinghua University, Beijing 100084, China.
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184
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Alipour S, Hassani M, Hosseini SMH, Mousavi-Khoshdel SM. Facile preparation of covalently functionalized graphene with 2,4-dinitrophenylhydrazine and investigation of its characteristics. RSC Adv 2022; 13:558-569. [PMID: 36605623 PMCID: PMC9772862 DOI: 10.1039/d2ra06343c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2022] [Accepted: 12/15/2022] [Indexed: 12/24/2022] Open
Abstract
This article reports a fast and easy method for simultaneously in situ reducing and functionalizing graphene oxide. 2,4-Dinitrophenylhydrazine hydrate salt molecules are reduced by graphene oxide by reacting with oxide groups on the surface and removing these groups, and 2,4-dinitrophenylhydrazone groups are replaced with oxide groups. The synthesized materials have been investigated using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), and UV absorption. Also, the morphology has been examined with a scanning electron microscope (SEM) and Brunauer-Emmett-Teller (BET) analysis. The result of the photocurrent response and electrochemical behavior of the samples through cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy (EIS) have been analyzed to investigate the effect of physical and chemical changes compared to graphene.
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Affiliation(s)
- S. Alipour
- Department of Chemistry, Iran University of Science and Technology (IUST)NarmakTehranIran+982177240480+982177240480
| | - M. Hassani
- Department of Chemistry, Iran University of Science and Technology (IUST)NarmakTehranIran+982177240480+982177240480
| | - S. M. H. Hosseini
- Department of Chemistry, Iran University of Science and Technology (IUST)NarmakTehranIran+982177240480+982177240480
| | - S. M. Mousavi-Khoshdel
- Department of Chemistry, Iran University of Science and Technology (IUST)NarmakTehranIran+982177240480+982177240480
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185
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Fabrication of Inorganic Coatings Incorporated with Functionalized Graphene Oxide Nanosheets for Improving Fire Retardancy of Wooden Substrates. Polymers (Basel) 2022; 14:polym14245542. [PMID: 36559909 PMCID: PMC9784433 DOI: 10.3390/polym14245542] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 11/18/2022] [Accepted: 12/03/2022] [Indexed: 12/23/2022] Open
Abstract
Flame-retardant chemicals are frequently used within consumer products and can even be employed as a treatment on the surface of different types of materials (e.g., wood, steel, and textiles) to prevent fire or limit the rapid spread of flames. Functionalized graphene oxide (FGO) nanosheets are a promising construction coating nanomaterial that can be blended with sodium metasilicate and gypsum to reduce the flammability of construction buildings. In this work, we designed and fabricated novel and halogen-free FGO sheets using the modified Hummers method; and subsequently functionalized them by pentaerythritol through a chemical impregnation process before dispersing them within the construction coating. Scanning electron microscopic images confirm that the FGO-filled coating was uniformly dispersed on the surface of wooden substrates. We identified that the FGO content is a critical factor affecting the fire retardancy. Thermogravimetric analysis of the FGO coating revealed that higher char residue can be obtained at 700 °C. Based on the differential scanning calorimetry, the exothermic peak contained a temperature delay in the presence of FGO sheets, primarily due to the formation of a thermal barrier. Such a significant improvement in the flame retardancy confirms that the FGO nanosheets are superior nanomaterials to be employed as a flame-retardant construction coating nanomaterial for improving thermal management within buildings.
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186
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Zhou T, Xu C, Ren W. Grain-Boundary-Induced Ultrasensitive Molecular Detection of Graphene Film. NANO LETTERS 2022; 22:9380-9388. [PMID: 36455614 DOI: 10.1021/acs.nanolett.2c03218] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Graphene has been considered a promising platform for molecular detection due to the graphene-enhanced Raman scattering (GERS) effect. However, the GERS performance of pristine graphene is limited by a low chemically active surface and insufficient density of states (DOS). Although diverse defects have been introduced, it remains a great challenge to improve the enhancement performance. Here, we show that graphene grain boundaries (GBs) possess stronger adsorption capacity and more abundant DOS. Thus, GERS performance increases with the atomic percentage of GBs, which makes nanocrystalline graphene (NG) film a superior GERS substrate. For R6G as a probe molecule, a low detection limit of 3 × 10-10 M was achieved. Utilizing the high chemical activity of GBs, we also fabricated NG film decorated with Au particles using a one-step quenching strategy, and this hybrid film exhibits an extremely low limit of detection down to 5 × 10-11 M, outperforming all the reported graphene-based systems.
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Affiliation(s)
- Tianya Zhou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, P. R. China
| | - Chuan Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, P. R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, P. R. China
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187
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Blecha T, Vlčková Živcová Z, Sonia FJ, Mergl M, Volochanskyi O, Bodnár M, Rous P, Mizohata K, Kalbáč M, Frank O. Electrical Contact Resistance of Large-Area Graphene on Pre-Patterned Cu and Au Electrodes. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4444. [PMID: 36558297 PMCID: PMC9780872 DOI: 10.3390/nano12244444] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 12/10/2022] [Accepted: 12/12/2022] [Indexed: 06/17/2023]
Abstract
Contact resistance between electrically connected parts of electronic elements can negatively affect their resulting properties and parameters. The contact resistance is influenced by the physicochemical properties of the connected elements and, in most cases, the lowest possible value is required. The issue of contact resistance is also addressed in connection with the increasingly frequently used carbon allotropes. This work aimed to determine the factors that influence contact resistance between graphene prepared by chemical vapour deposition and pre-patterned Cu and Au electrodes onto which graphene is subsequently transferred. It was found that electrode surface treatment methods affect the resistance between Cu and graphene, where contact resistance varied greatly, with an average of 1.25 ± 1.54 kΩ, whereas for the Au electrodes, the deposition techniques did not influence the resulting contact resistance, which decreased by almost two orders of magnitude compared with the Cu electrodes, to 0.03 ± 0.01 kΩ.
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Affiliation(s)
- Tomáš Blecha
- Faculty of Electrical Engineering, University of West Bohemia, Univerzitní 2795/8, 301 00 Pilsen, Czech Republic
| | - Zuzana Vlčková Živcová
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
| | - Farjana J. Sonia
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
| | - Martin Mergl
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
| | - Oleksandr Volochanskyi
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
- Department of Physical Chemistry, Faculty of Chemical Engineering, University of Chemistry and Technology, Technicka 5, 166 28 Prague, Czech Republic
| | - Michal Bodnár
- Tesla Blatná a.s., Palackého 644, 388 01 Blatná, Czech Republic
| | - Pavel Rous
- Faculty of Electrical Engineering, University of West Bohemia, Univerzitní 2795/8, 301 00 Pilsen, Czech Republic
| | - Kenichiro Mizohata
- Department of Physics, Helsinki University, P.O. Box 43, 00014 Helsinki, Finland
| | - Martin Kalbáč
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
| | - Otakar Frank
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
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188
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Work Function of Layered Graphene Prepared by Chemical Vapor Deposition in High Vacuum. E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY 2022. [DOI: 10.1380/ejssnt.2023-011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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189
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Wang J, Park JH, Lu AY, Kong J. Electrical Control of Chemical Vapor Deposition of Graphene. J Am Chem Soc 2022; 144:22925-22932. [DOI: 10.1021/jacs.2c08001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Jiangtao Wang
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Ji-Hoon Park
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Ang-Yu Lu
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Jing Kong
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
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190
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Smaisim GF, Abed AM, Al-Madhhachi H, Hadrawi SK, Al-Khateeb HMM, Kianfar E. Graphene-Based Important Carbon Structures and Nanomaterials for Energy Storage Applications as Chemical Capacitors and Supercapacitor Electrodes: a Review. BIONANOSCIENCE 2022. [DOI: 10.1007/s12668-022-01048-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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191
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Tian B, Li J, Samad A, Schwingenschlögl U, Lanza M, Zhang X. Production of Large-Area Nucleus-Free Single-Crystal Graphene-Mesh Metamaterials with Zigzag Edges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201253. [PMID: 35307871 DOI: 10.1002/adma.202201253] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2022] [Revised: 03/07/2022] [Indexed: 06/14/2023]
Abstract
In addition to conventional monolayer or bilayer graphene films, graphene-mesh metamaterials have attracted considerable research attention within the scientific community owing to their unique physical and optical properties. Currently, most graphene-mesh metamaterials are fabricated using common lithography techniques on exfoliated graphene flakes, which require the deposition and removal of chemicals during fabrication. This process may introduce contamination or doping, thereby limiting their production size and application in nanodevices. Herein, the controlled production of wafer-scale high-quality single-crystal nucleus-free graphene-mesh metamaterial films with zigzag edges is demonstrated. The 13 C-isotopic labeling graphene-growth approach, large-area Raman mapping techniques, and a uniquely designed high-voltage localized-space air-ionization etching method are utilized to directly remove the graphene nuclei. Subsequently, a hydrogen-assisted anisotropic etching process is employed for transforming irregular edges into zigzag edges within the hexagonal-shaped holes, producing a large-scale single-crystal high-quality graphene-mesh metamaterial film on a Cu(111) substrate. The carrier mobilities of the fabricated field-effect transistors on the as-produced films are measured. The findings of this study enable the large-scale production of high-quality low-dimensional graphene-mesh metamaterials and provide insights for the application of integrated circuits based on graphene and other 2D metamaterials.
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Affiliation(s)
- Bo Tian
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Junzhu Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Abdus Samad
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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192
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Shen Y, Dong Z, Sun Y, Guo H, Wu F, Li X, Tang J, Liu J, Wu X, Tian H, Ren TL. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201916. [PMID: 35535757 DOI: 10.1002/adma.202201916] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.
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Affiliation(s)
- Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zuoyuan Dong
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Yabin Sun
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Hao Guo
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xianglong Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Jun Tang
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Jun Liu
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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193
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Ci H, Chen J, Ma H, Sun X, Jiang X, Liu K, Shan J, Lian X, Jiang B, Liu R, Liu B, Yang G, Yin W, Zhao W, Huang L, Gao T, Sun J, Liu Z. Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206389. [PMID: 36208081 DOI: 10.1002/adma.202206389] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V-1 s-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.
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Affiliation(s)
- Haina Ci
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, 266061, P. R. China
| | - Jingtao Chen
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hao Ma
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China
| | - Xiaoli Sun
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Xingyu Jiang
- Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Kaicong Liu
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jingyuan Shan
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xueyu Lian
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
| | - Bei Jiang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ruojuan Liu
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Bingzhi Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Guiqi Yang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wanjian Yin
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wen Zhao
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China
| | - Lizhen Huang
- Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Teng Gao
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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194
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Li S, Yang Y, Wang S, Gao Y, Song Z, Chen L, Chen Z. Advances in metal graphitic nanocapsules for biomedicine. EXPLORATION (BEIJING, CHINA) 2022; 2:20210223. [PMID: 37324797 PMCID: PMC10191027 DOI: 10.1002/exp.20210223] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 02/21/2022] [Indexed: 06/16/2023]
Abstract
Metal graphitic nanocapsules have the advantages of both graphitic and metal nanomaterials, showing great promise in biomedicine. On one hand, the chemically inert graphitic shells are able to protect the metal core from external environments, quench the fluorescence signal from the biological system, offer robust platform for targeted molecules or drugs loading, and act as stable Raman labels or internal standard molecule. On the other hand, the metal cores with different compositions, sizes, and morphologies show unique physicochemical properties, and further broaden their biomedical functions. In this review, we firstly introduce the preparation, classification, and properties of metal graphitic nanocapsules, then summarize the recent progress of their applications in biodetection, bioimaging, and therapy. Challenges and their development prospects in biomedicine are eventually discussed in detail. We expect the versatile metal graphitic nanocapsules will advance the development of future clinical biomedicine.
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Affiliation(s)
- Shengkai Li
- Molecular Science and Biomedicine Laboratory (MBL)State Key Laboratory of Chemo/Bio‐Sensing and ChemometricsCollege of Chemistry and Chemical EngineeringAptamer Engineering Center of Hunan ProvinceHunan Provincial Key Laboratory of Biomacromolecular Chemical BiologyHunan UniversityChangshaChina
| | - Yanxia Yang
- Molecular Science and Biomedicine Laboratory (MBL)State Key Laboratory of Chemo/Bio‐Sensing and ChemometricsCollege of Chemistry and Chemical EngineeringAptamer Engineering Center of Hunan ProvinceHunan Provincial Key Laboratory of Biomacromolecular Chemical BiologyHunan UniversityChangshaChina
| | - Shen Wang
- Molecular Science and Biomedicine Laboratory (MBL)State Key Laboratory of Chemo/Bio‐Sensing and ChemometricsCollege of Chemistry and Chemical EngineeringAptamer Engineering Center of Hunan ProvinceHunan Provincial Key Laboratory of Biomacromolecular Chemical BiologyHunan UniversityChangshaChina
| | - Yang Gao
- College of Materials Science and EngineeringHunan Province Key Laboratory for Advanced Carbon Materials and Applied TechnologyHunan UniversityChangshaChina
| | - Zhiling Song
- Key Laboratory of Optic‐Electric Sensing and Analytical Chemistry for Life ScienceMOEShandong Key Laboratory of Biochemical AnalysisCollege of Chemistry and Molecular EngineeringQingdao University of Science and TechnologyQingdaoChina
| | - Long Chen
- Faculty of Science and TechnologyUniversity of MacauMacau SARChina
| | - Zhuo Chen
- Molecular Science and Biomedicine Laboratory (MBL)State Key Laboratory of Chemo/Bio‐Sensing and ChemometricsCollege of Chemistry and Chemical EngineeringAptamer Engineering Center of Hunan ProvinceHunan Provincial Key Laboratory of Biomacromolecular Chemical BiologyHunan UniversityChangshaChina
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195
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Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
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Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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196
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Wu S, Li H, Futaba DN, Chen G, Chen C, Zhou K, Zhang Q, Li M, Ye Z, Xu M. Structural Design and Fabrication of Multifunctional Nanocarbon Materials for Extreme Environmental Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201046. [PMID: 35560664 DOI: 10.1002/adma.202201046] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Revised: 04/27/2022] [Indexed: 06/15/2023]
Abstract
Extreme environments represent numerous harsh environmental conditions, such as temperature, pressure, corrosion, and radiation. The tolerance of applications in extreme environments exemplifies significant challenges to both materials and their structures. Given the superior mechanical strength, electrical conductivity, thermal stability, and chemical stability of nanocarbon materials, such as carbon nanotubes (CNTs) and graphene, they are widely investigated as base materials for extreme environmental applications and have shown numerous breakthroughs in the fields of wide-temperature structural-material construction, low-temperature energy storage, underwater sensing, and electronics operated at high temperatures. Here, the critical aspects of structural design and fabrication of nanocarbon materials for extreme environments are reviewed, including a description of the underlying mechanism supporting the performance of nanocarbon materials against extreme environments, the principles of structural design of nanocarbon materials for the optimization of extreme environmental performances, and the fabrication processes developed for the realization of specific extreme environmental applications. Finally, perspectives on how CNTs and graphene can further contribute to the development of extreme environmental applications are presented.
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Affiliation(s)
- Sijia Wu
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Huajian Li
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Don N Futaba
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Guohai Chen
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Chen Chen
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Kechen Zhou
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qifan Zhang
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Miao Li
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zonglin Ye
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ming Xu
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
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197
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Ali M, Dong Y, Lv J, Guo H, Abid Anwar M, Tian F, Shahzad K, Liu W, Yu B, Bodepudi SC, Xu Y. In-Situ Monitoring of Reciprocal Charge Transfer and Losses in Graphene-Silicon CCD Pixels. SENSORS (BASEL, SWITZERLAND) 2022; 22:9341. [PMID: 36502042 PMCID: PMC9735458 DOI: 10.3390/s22239341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Revised: 11/23/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Charge-coupled devices (CCD) allow imaging by photodetection, charge integration, and serial transfer of the stored charge packets from multiple pixels to the readout node. The functionality of CCD can be extended to the non-destructive and in-situ readout of the integrated charges by replacing metallic electrodes with graphene in the metal-oxide-semiconductors (MOS) structure of a CCD pixel. The electrostatic capacitive coupling of graphene with the substrate allows the Fermi level tuning that reflects the integrated charge density in the depletion well. This work demonstrates the in-situ monitoring of the serial charge transfer and interpixel transfer losses in a reciprocating manner between two adjacent Gr-Si CCD pixels by benefitting the electrostatic and gate-to-gate couplings. We achieved the maximum charge transfer efficiency (CTE) of 92.4%, which is mainly decided by the inter-pixel distance, phase clock amplitudes, switching slopes, and density of surface defects. The discussion on overcoming transfer losses and improving CTE by realizing a graphene-electron multiplication CCD is also presented. The proof of the concept of the in-situ readout of the out-of-plane avalanche in a single Gr-Si CCD pixel is also demonstrated, which can amplify the photo packet in a pre-transfer manner.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Bin Yu
- Correspondence: (B.Y.); (S.C.B.); (Y.X.)
| | | | - Yang Xu
- Correspondence: (B.Y.); (S.C.B.); (Y.X.)
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198
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Kim Y, Han H, Luo D, Ruoff RS, Shin HJ. Decoupling of CVD-grown epitaxial graphene using NaCl intercalation. NANOSCALE 2022; 14:16929-16935. [PMID: 36345667 DOI: 10.1039/d2nr05660g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The structural and electronic properties of graphene grown on catalytic metal surfaces are significantly modified via graphene-substrate interaction. To minimize the influence of the metal substrate, a dielectric buffer layer can be introduced between the graphene and metal substrate. However, the catalytic synthesis of graphene limits the potential alternatives for buffer layers. The intercalation of atoms below the graphene layer is a promising method that does not require the chemical treatment of graphene or the substrate. In this study, the electronic and structural properties of single-layer graphene (SLG) on the Cu(111) substrate intercalated with ultrathin NaCl thin films were investigated using scanning tunnelling microscopy. The intercalation of the NaCl monolayer decoupled SLG from the metal substrate, thereby producing quasi-freestanding graphene.
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Affiliation(s)
- Yohan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Huijun Han
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyung-Joon Shin
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
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Kang MS, Lee WY, Yoon YG, Choi JW, Kim GS, Kim SH, Park NW, Lee SK. Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe 2/MoS 2 Heterostructures Using Wet-Transfer Stacking. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51881-51888. [PMID: 36355622 DOI: 10.1021/acsami.2c14065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe2 film on high-resistance (HR) semiconducting MoS2 (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe2 (3 nm)/HR-MoS2 (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 μV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe2/HR-MoS2 heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.
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Affiliation(s)
- Min-Sung Kang
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Won-Yong Lee
- Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala75103, Sweden
| | - Young-Gui Yoon
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Jae Won Choi
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Gil-Sung Kim
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Si-Hoo Kim
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - No-Won Park
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Sang-Kwon Lee
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
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200
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Biobased Kapok Fiber Nano-Structure for Energy and Environment Application: A Critical Review. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27228107. [PMID: 36432208 PMCID: PMC9699385 DOI: 10.3390/molecules27228107] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/01/2022] [Revised: 11/08/2022] [Accepted: 11/12/2022] [Indexed: 11/23/2022]
Abstract
The increasing degradation of fossil fuels has motivated the globe to turn to green energy solutions such as biofuel in order to minimize the entire reliance on fossil fuels. Green renewable resources have grown in popularity in recent years as a result of the advancement of environmental technology solutions. Kapok fiber is a sort of cellulosic fiber derived from kapok tree seeds (Ceiba pentandra). Kapok Fiber, as a bio-template, offers the best alternatives to provide clean and renewable energy sources. The unique structure, good conductivity, and excellent physical properties exhibited by kapok fiber nominate it as a highly favored cocatalyst for deriving solar energy processes. This review will explore the role and recent developments of KF in energy production, including hydrogen and CO2 reduction. Moreover, this work summarized the potential of kapok fiber in environmental applications, including adsorption and degradation. The future contribution and concerns are highlighted in order to provide perspective on the future advancement of kapok fiber.
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