Synthesis of N-Doped Few-Layer Graphene through Shock-Induced Carbon Fixation from CO2

In this study, graphene and N-doped graphene nanosheets were synthesized through the shock-induced reduction of CO₂ using a cylindrical shock-loading apparatus. The mixture of solid CO₂ and Mg powder was filled in the pre-cooled sample tube and then impacted by a shock-driven cylindrical flyer tube. The impact generated a shockwave that propagated into the mixed precursor, inducing a chemical reaction between CO₂ and Mg at a high shock pressure and high shock temperature. The recovered black powders were characterized via various techniques, confirming the presences of few-layer graphene. The mechanism is carefully shown to be that CO₂ was reduced by Mg to form few-layer graphene under shock-induced high pressure and high temperature. By adding carbamide as an N source, this synthetic route was also applied to synthesize N-doped graphene nanosheets. Moreover, the yield and mass of the graphene materials in this study are up to 40% and 0.5 g, respectively. This study showed an efficient and easy-to-scale-up route to prepare few-layer graphene and N-doped few-layer graphene through shock synthesis.

Better Cryo-EM Specimen Preparation: How to Deal with the Air-Water Interface?

Cryogenic electron microscopy (cryo-EM) is now one of the most powerful and widely used methods to determine high-resolution structures of macromolecules. A major bottleneck of cryo-EM is to prepare high-quality vitrified specimen, which still faces many practical challenges. During the conventional vitrification process, macromolecules tend to adsorb at the air-water interface (AWI), which is known unfriendly to biological samples. In this review, we outline the nature of AWI and the problems caused by it, such as unpredictable or uneven particle distribution, protein denaturation, dissociation of complex and preferential orientation. We review and discuss the approaches and underlying mechanisms to deal with AWI: 1) Additives, exemplified by detergents, forming a protective layer at AWI and thus preserving the native folds of target macromolecules. 2) Fast vitrification devices based on the idea to freeze in-solution macromolecules before their touching of AWI. 3) Thin layer of continuous supporting films to adsorb macromolecules, and when functionalized with affinity ligands, to specifically anchor the target particles away from the AWI. Among these supporting films, graphene, together with its derivatives, with negligible background noise and mechanical robustness, has emerged as a new generation of support. These strategies have been proven successful in various cases and enable us a better handling of the problems caused by the AWI in cryo-EM specimen preparation.

Facile preparation of covalently functionalized graphene with 2,4-dinitrophenylhydrazine and investigation of its characteristics

This article reports a fast and easy method for simultaneously in situ reducing and functionalizing graphene oxide. 2,4-Dinitrophenylhydrazine hydrate salt molecules are reduced by graphene oxide by reacting with oxide groups on the surface and removing these groups, and 2,4-dinitrophenylhydrazone groups are replaced with oxide groups. The synthesized materials have been investigated using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), and UV absorption. Also, the morphology has been examined with a scanning electron microscope (SEM) and Brunauer-Emmett-Teller (BET) analysis. The result of the photocurrent response and electrochemical behavior of the samples through cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy (EIS) have been analyzed to investigate the effect of physical and chemical changes compared to graphene.

Fabrication of Inorganic Coatings Incorporated with Functionalized Graphene Oxide Nanosheets for Improving Fire Retardancy of Wooden Substrates

Flame-retardant chemicals are frequently used within consumer products and can even be employed as a treatment on the surface of different types of materials (e.g., wood, steel, and textiles) to prevent fire or limit the rapid spread of flames. Functionalized graphene oxide (FGO) nanosheets are a promising construction coating nanomaterial that can be blended with sodium metasilicate and gypsum to reduce the flammability of construction buildings. In this work, we designed and fabricated novel and halogen-free FGO sheets using the modified Hummers method; and subsequently functionalized them by pentaerythritol through a chemical impregnation process before dispersing them within the construction coating. Scanning electron microscopic images confirm that the FGO-filled coating was uniformly dispersed on the surface of wooden substrates. We identified that the FGO content is a critical factor affecting the fire retardancy. Thermogravimetric analysis of the FGO coating revealed that higher char residue can be obtained at 700 °C. Based on the differential scanning calorimetry, the exothermic peak contained a temperature delay in the presence of FGO sheets, primarily due to the formation of a thermal barrier. Such a significant improvement in the flame retardancy confirms that the FGO nanosheets are superior nanomaterials to be employed as a flame-retardant construction coating nanomaterial for improving thermal management within buildings.

Grain-Boundary-Induced Ultrasensitive Molecular Detection of Graphene Film

Graphene has been considered a promising platform for molecular detection due to the graphene-enhanced Raman scattering (GERS) effect. However, the GERS performance of pristine graphene is limited by a low chemically active surface and insufficient density of states (DOS). Although diverse defects have been introduced, it remains a great challenge to improve the enhancement performance. Here, we show that graphene grain boundaries (GBs) possess stronger adsorption capacity and more abundant DOS. Thus, GERS performance increases with the atomic percentage of GBs, which makes nanocrystalline graphene (NG) film a superior GERS substrate. For R6G as a probe molecule, a low detection limit of 3 × 10^-10 M was achieved. Utilizing the high chemical activity of GBs, we also fabricated NG film decorated with Au particles using a one-step quenching strategy, and this hybrid film exhibits an extremely low limit of detection down to 5 × 10^-11 M, outperforming all the reported graphene-based systems.

Electrical Contact Resistance of Large-Area Graphene on Pre-Patterned Cu and Au Electrodes

Contact resistance between electrically connected parts of electronic elements can negatively affect their resulting properties and parameters. The contact resistance is influenced by the physicochemical properties of the connected elements and, in most cases, the lowest possible value is required. The issue of contact resistance is also addressed in connection with the increasingly frequently used carbon allotropes. This work aimed to determine the factors that influence contact resistance between graphene prepared by chemical vapour deposition and pre-patterned Cu and Au electrodes onto which graphene is subsequently transferred. It was found that electrode surface treatment methods affect the resistance between Cu and graphene, where contact resistance varied greatly, with an average of 1.25 ± 1.54 kΩ, whereas for the Au electrodes, the deposition techniques did not influence the resulting contact resistance, which decreased by almost two orders of magnitude compared with the Cu electrodes, to 0.03 ± 0.01 kΩ.

Production of Large-Area Nucleus-Free Single-Crystal Graphene-Mesh Metamaterials with Zigzag Edges

In addition to conventional monolayer or bilayer graphene films, graphene-mesh metamaterials have attracted considerable research attention within the scientific community owing to their unique physical and optical properties. Currently, most graphene-mesh metamaterials are fabricated using common lithography techniques on exfoliated graphene flakes, which require the deposition and removal of chemicals during fabrication. This process may introduce contamination or doping, thereby limiting their production size and application in nanodevices. Herein, the controlled production of wafer-scale high-quality single-crystal nucleus-free graphene-mesh metamaterial films with zigzag edges is demonstrated. The ¹³ C-isotopic labeling graphene-growth approach, large-area Raman mapping techniques, and a uniquely designed high-voltage localized-space air-ionization etching method are utilized to directly remove the graphene nuclei. Subsequently, a hydrogen-assisted anisotropic etching process is employed for transforming irregular edges into zigzag edges within the hexagonal-shaped holes, producing a large-scale single-crystal high-quality graphene-mesh metamaterial film on a Cu(111) substrate. The carrier mobilities of the fabricated field-effect transistors on the as-produced films are measured. The findings of this study enable the large-scale production of high-quality low-dimensional graphene-mesh metamaterials and provide insights for the application of integrated circuits based on graphene and other 2D metamaterials.

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

2D transition metal chalcogenide (TMDC) materials, such as MoS₂ , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS₂ have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS₂ beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS₂ in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer

The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H₂ dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm² V^-1 s^-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.

Advances in metal graphitic nanocapsules for biomedicine

Metal graphitic nanocapsules have the advantages of both graphitic and metal nanomaterials, showing great promise in biomedicine. On one hand, the chemically inert graphitic shells are able to protect the metal core from external environments, quench the fluorescence signal from the biological system, offer robust platform for targeted molecules or drugs loading, and act as stable Raman labels or internal standard molecule. On the other hand, the metal cores with different compositions, sizes, and morphologies show unique physicochemical properties, and further broaden their biomedical functions. In this review, we firstly introduce the preparation, classification, and properties of metal graphitic nanocapsules, then summarize the recent progress of their applications in biodetection, bioimaging, and therapy. Challenges and their development prospects in biomedicine are eventually discussed in detail. We expect the versatile metal graphitic nanocapsules will advance the development of future clinical biomedicine.

The Road for 2D Semiconductors in the Silicon Age

Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.

Structural Design and Fabrication of Multifunctional Nanocarbon Materials for Extreme Environmental Applications

Extreme environments represent numerous harsh environmental conditions, such as temperature, pressure, corrosion, and radiation. The tolerance of applications in extreme environments exemplifies significant challenges to both materials and their structures. Given the superior mechanical strength, electrical conductivity, thermal stability, and chemical stability of nanocarbon materials, such as carbon nanotubes (CNTs) and graphene, they are widely investigated as base materials for extreme environmental applications and have shown numerous breakthroughs in the fields of wide-temperature structural-material construction, low-temperature energy storage, underwater sensing, and electronics operated at high temperatures. Here, the critical aspects of structural design and fabrication of nanocarbon materials for extreme environments are reviewed, including a description of the underlying mechanism supporting the performance of nanocarbon materials against extreme environments, the principles of structural design of nanocarbon materials for the optimization of extreme environmental performances, and the fabrication processes developed for the realization of specific extreme environmental applications. Finally, perspectives on how CNTs and graphene can further contribute to the development of extreme environmental applications are presented.

In-Situ Monitoring of Reciprocal Charge Transfer and Losses in Graphene-Silicon CCD Pixels

Charge-coupled devices (CCD) allow imaging by photodetection, charge integration, and serial transfer of the stored charge packets from multiple pixels to the readout node. The functionality of CCD can be extended to the non-destructive and in-situ readout of the integrated charges by replacing metallic electrodes with graphene in the metal-oxide-semiconductors (MOS) structure of a CCD pixel. The electrostatic capacitive coupling of graphene with the substrate allows the Fermi level tuning that reflects the integrated charge density in the depletion well. This work demonstrates the in-situ monitoring of the serial charge transfer and interpixel transfer losses in a reciprocating manner between two adjacent Gr-Si CCD pixels by benefitting the electrostatic and gate-to-gate couplings. We achieved the maximum charge transfer efficiency (CTE) of 92.4%, which is mainly decided by the inter-pixel distance, phase clock amplitudes, switching slopes, and density of surface defects. The discussion on overcoming transfer losses and improving CTE by realizing a graphene-electron multiplication CCD is also presented. The proof of the concept of the in-situ readout of the out-of-plane avalanche in a single Gr-Si CCD pixel is also demonstrated, which can amplify the photo packet in a pre-transfer manner.

Decoupling of CVD-grown epitaxial graphene using NaCl intercalation

The structural and electronic properties of graphene grown on catalytic metal surfaces are significantly modified via graphene-substrate interaction. To minimize the influence of the metal substrate, a dielectric buffer layer can be introduced between the graphene and metal substrate. However, the catalytic synthesis of graphene limits the potential alternatives for buffer layers. The intercalation of atoms below the graphene layer is a promising method that does not require the chemical treatment of graphene or the substrate. In this study, the electronic and structural properties of single-layer graphene (SLG) on the Cu(111) substrate intercalated with ultrathin NaCl thin films were investigated using scanning tunnelling microscopy. The intercalation of the NaCl monolayer decoupled SLG from the metal substrate, thereby producing quasi-freestanding graphene.

Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe2/MoS2 Heterostructures Using Wet-Transfer Stacking

It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe₂ film on high-resistance (HR) semiconducting MoS₂ (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe₂ (3 nm)/HR-MoS₂ (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 μV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe₂/HR-MoS₂ heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.

Biobased Kapok Fiber Nano-Structure for Energy and Environment Application: A Critical Review

The increasing degradation of fossil fuels has motivated the globe to turn to green energy solutions such as biofuel in order to minimize the entire reliance on fossil fuels. Green renewable resources have grown in popularity in recent years as a result of the advancement of environmental technology solutions. Kapok fiber is a sort of cellulosic fiber derived from kapok tree seeds (Ceiba pentandra). Kapok Fiber, as a bio-template, offers the best alternatives to provide clean and renewable energy sources. The unique structure, good conductivity, and excellent physical properties exhibited by kapok fiber nominate it as a highly favored cocatalyst for deriving solar energy processes. This review will explore the role and recent developments of KF in energy production, including hydrogen and CO₂ reduction. Moreover, this work summarized the potential of kapok fiber in environmental applications, including adsorption and degradation. The future contribution and concerns are highlighted in order to provide perspective on the future advancement of kapok fiber.

Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor

The substrate plays a crucial role in determining the transport and low-frequency noise behavior of graphene field-effect devices. Typically, a heavily doped Si/SiO₂ substrate is used to fabricate these devices for efficient gating. Trapping-detrapping processes close to the graphene/substrate interface are the dominant sources of resistance fluctuations in the graphene channel, while Coulomb fluctuations arising due to any remote charge fluctuations inside the bulk of the substrate are effectively screened by the heavily doped substrate. Here, we present the electronic transport and low-frequency noise characteristics of a large-area CVD graphene field-effect transistor (FET) prepared on a lightly doped Si/SiO₂ substrate (N_A ≈ 10¹⁵ cm^-3). Through a systematic characterization of transport, noise, and capacitance at various temperatures, we reveal that the remote Si/SiO₂ interface can affect the charge transport in graphene severely and any charge fluctuations inside the bulk of the silicon substrate can be sensed by the graphene channel. The resistance (R) vs back-gate voltage (V_bg) characteristics of the device show a hump around the depletion region formed at the SiO₂/Si interface, confirmed by the capacitance (C)-voltage (V) measurement. A low-frequency noise measurement on these fabricated devices shows a peak in the noise amplitude close to the depletion region. This indicates that due to the absence of any charge layer at the Si/SiO₂ interface, the screening ability decreases, and as a consequence, any fluctuations in the deep-level Coulomb impurities inside the silicon substrate can be observed as noise in resistance in the graphene channel via mobility fluctuations. The noise behavior on ionic liquid-gated graphene on the same substrate exhibits no such peak in noise and can be explained by the interfacial trapping-detrapping processes close to the graphene channel. Our study will definitely be useful for integrating graphene with the existing silicon technology, in particular, for high-frequency applications.

Graphene Incorporated Electrospun Nanofiber for Electrochemical Sensing and Biomedical Applications: A Critical Review

The extraordinary material graphene arrived in the fields of engineering and science to instigate a material revolution in 2004. Graphene has promptly risen as the super star due to its outstanding properties. Graphene is an allotrope of carbon and is made up of sp²-bonded carbon atoms placed in a two-dimensional honeycomb lattice. Graphite consists of stacked layers of graphene. Due to the distinctive structural features as well as excellent physico-chemical and electrical conductivity, graphene allows remarkable improvement in the performance of electrospun nanofibers (NFs), which results in the enhancement of promising applications in NF-based sensor and biomedical technologies. Electrospinning is an easy, economical, and versatile technology depending on electrostatic repulsion between the surface charges to generate fibers from the extensive list of polymeric and ceramic materials with diameters down to a few nanometers. NFs have emerged as important and attractive platform with outstanding properties for biosensing and biomedical applications, because of their excellent functional features, that include high porosity, high surface area to volume ratio, high catalytic and charge transfer, much better electrical conductivity, controllable nanofiber mat configuration, biocompatibility, and bioresorbability. The inclusion of graphene nanomaterials (GNMs) into NFs is highly desirable. Pre-processing techniques and post-processing techniques to incorporate GNMs into electrospun polymer NFs are precisely discussed. The accomplishment and the utilization of NFs containing GNMs in the electrochemical biosensing pathway for the detection of a broad range biological analytes are discussed. Graphene oxide (GO) has great importance and potential in the biomedical field and can imitate the composition of the extracellular matrix. The oxygen-rich GO is hydrophilic in nature and easily disperses in water, and assists in cell growth, drug delivery, and antimicrobial properties of electrospun nanofiber matrices. NFs containing GO for tissue engineering, drug and gene delivery, wound healing applications, and medical equipment are discussed. NFs containing GO have importance in biomedical applications, which include engineered cardiac patches, instrument coatings, and triboelectric nanogenerators (TENGs) for motion sensing applications. This review deals with graphene-based nanomaterials (GNMs) such as GO incorporated electrospun polymeric NFs for biosensing and biomedical applications, that can bridge the gap between the laboratory facility and industry.

Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ∼20μm.

Graphene/Polymer Nanocomposites: Preparation, Mechanical Properties, and Application

Although polymers are very important and vastly used materials, their physical properties are limited. Therefore, they are reinforced with fillers to relieve diverse restrictions and expand their application areas. The exceptional properties of graphene make it an interesting material with huge potential for application in various industries and devices. The interfacial interaction between graphene and the polymer matrix improved the uniform graphene dispersion in the polymer matrix, enhancing the general nanocomposite performance. Therefore, graphene functionalization is essential to enhance the interfacial interaction, maintain excellent properties, and obstruct graphene agglomeration. Many studies have reported that graphene/polymer nanocomposites have exceptional properties that enable diverse applications. The use of graphene/polymer nanocomposites is expected to increase sustainably and to transform from a basic to an advanced material to offer optimum solutions to industry and consumers.

Morphology-Control Growth of Graphene Islands by Nonlinear Carbon Supply

Controlling the morphology of graphene and other 2D materials in chemical vapor deposition (CVD) growth is crucial because the morphology reflects the crystal quality of as-synthesized nanomaterials in a certain way, and consequently it indirectly represents the physical properties of 2D materials such as bandgap, selective ion transportation, and impermeability. However, precise control of the morphology is limited by the complex formation mechanism and sensitive growth-environment factors of graphene. Therefore, the CVD synthesis of single-crystal hexagonal-shaped graphene islands with specific sizes is challenging. Herein, an unconventional nonlinear-carbon-supply growth strategy is proposed to realize controllable CVD growth of desired hexagonal graphene islands with specific sizes on Cu substrates. Large-area graphene films of isolated islands with desired densities, sizes, and distances between the islands are successfully synthesized. Subsequently, the direct growth of a planar-tunnel-junction structure based on two parallel gapped graphene islands is achieved by specific adjustment of the growth and etching processes of graphene CVD synthesis. It is therefore demonstrated that the nonlinear-carbon-supply growth strategy is a reliable method for the synthesis of high-quality graphene and can facilitate the direct growth of graphene-based nanodevices in the future.

Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures

The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.

Progress in the experimental and computational methods of work function evaluation of materials: A review

The work function, which determines the behaviour of electrons in a material, remains a crucial factor in surface science to understand the corrosion rates and interfacial engineering in making photosensitive and electron-emitting devices. The present article reviews the various experimental methods and theoretical models employed for work function measurement along with their merits and demerits are discussed. Reports from the existing methods of work function measurements that Kelvin probe force microscopy (KPFM) is the most suitable measurement technique over other experimental methods. It has been observed from the literature that the computational methods that are capable of predicting the work functions of different metals have a higher computational cost. However, the stabilized Jellium model (SJM) has the potential to predict the work function of transition metals, simple metals, rare-earth metals and inner transition metals. The metallic plasma model (MPM) can predict polycrystalline metals, while the density functional theory (DFT) is a versatile tool for predicting the lowest and highest work function of the material with higher computational cost. The high-throughput density functional theory and machine learning (HTDFTML) tools are suitable for predicting the lowest and highest work functions of extreme material surfaces with cheaper computational cost. The combined Bayesian machine learning and first principle (CBMLFP) is suitable for predicting the lowest and highest work functions of the materials with a very low computational cost. Conclusively, HTDFTML and CBMLFP should be used to explore the work functions and surface energy in complex materials.

Graphene Properties, Synthesis and Applications: A Review

We have evaluated some of the most recent breakthroughs in the synthesis and applications of graphene and graphene-based nanomaterials. This review includes three major categories. The first section consists of an overview of the structure and properties, including thermal, optical, and electrical transport. Recent developments in the synthesis techniques are elaborated in the second section. A number of top-down strategies for the synthesis of graphene, including exfoliation and chemical reduction of graphene oxide, are discussed. A few bottom-up synthesis methods for graphene are also covered, including thermal chemical vapor deposition, plasma-enhanced chemical vapor deposition, thermal decomposition of silicon, unzipping of carbon nanotubes, and others. The final section provides the recent innovations in graphene applications and the commercial availability of graphene-based devices.

F-Center-Mediated Growth of Patterned Organic Semiconductor Films on Alkali Halides

Organic semiconductors combine flexible tailoring of their optoelectronic properties by synthetic means with strong light-matter coupling, which is advantageous for organic electronic device applications. Although spatially selective deposition has been demonstrated, lateral patterning of organic films with simultaneous control of molecular and crystalline orientation is lacking as traditional lithography is not applicable. Here, a new patterning approach based on surface-localized F-centers (halide vacancies) generated by electron irradiation of alkali halides is presented, which allows structural control of molecular adlayers. Combining optical and atomic force microscopy, X-ray diffraction, and density functional theory (DFT) calculations, it is shown that dinaphthothienothiophene (DNTT) molecules adopt an upright orientation on pristine KCl surfaces, while the F-centers stabilize a recumbent orientation, and that these orientations are maintained in thicker films. This specific nucleation results also in different crystallographic morphologies, namely, densely packed islands and jagged fibers, each epitaxially aligned on the KCl surface. Spatially selective surface irradiation can also be used to create patterns of F-centers and thus laterally patterned DNTT films, which can be further transferred to any (including elastomer) substrate due to the water solubility of the alkali halide growth templates.

Reliable metal-graphene contact formation process flows in a CMOS-compatible environment

The possibility of exploiting the enormous potential of graphene for microelectronics and photonics must go through the optimization of the graphene-metal contact. Achieving low contact resistance is essential for the consideration of graphene as a candidate material for electronic and photonic devices. This work has been carried out in an 8'' wafer pilot-line for the integration of graphene into a CMOS environment. The main focus is to study the impact of the patterning of graphene and passivation on metal-graphene contact resistance. The latter is measured by means of transmission line measurement (TLM) with several contact designs. The presented approaches enable reproducible formation of contact resistivity as low as 660 Ω μm with a sheet resistance of 1.8 kΩ/□ by proper graphene patterning, passivation of the channel and a post-processing treatment such as annealing.

Waterborne Eco-Sustainable Sol-Gel Coatings Based on Phytic Acid Intercalated Graphene Oxide for Corrosion Protection of Metallic Surfaces

In the past few years, corrosion protection of metal materials has become a global challenge, due to its great economic importance. For this reason, various methods have been developed to inhibit the corrosion process, such as surface treatment approaches, by employing corrosion inhibitors through the deposition of opportunely designed functional coatings, employed to preserve from corrosion damages metallic substrates. Recently, among these techniques and in order to avoid the toxic chromate-based pre-treatment coatings, silane-based coatings and films loaded with organic and inorganic corrosion inhibitors have been widely used in corrosion mitigation water-based surface treatment. In this study, the synthetic approach was devoted to create an embedded, hosted, waterborne, and eco-friendly matrix, obtained by use of the sol–gel technique, through the reaction of functional alkoxysilane cross-linking precursors, namely (3-glycidyloxypropyl)trimethoxysilane (GPTMS) and (3-aminopropyl)triethoxysilane (APTES), in the presence of graphene oxide (GO) intercalated with natural and non-toxic phytic acid (PA) molecules. As a matter of fact, all experimental results from FT-IR spectroscopy, UV–Vis analysis, and SEM confirmed that PA molecules were successfully decorated on GO. Furthermore, polarization measurements and a neutral salt spray test were used to evaluate the anticorrosive performance on aluminum and steel substrates, thus showing that the GO-PA nanofiller improved the barrier and corrosion protection properties of the developed functional silane-based coatings.

Temperature-Dependent Coherent Tunneling across Graphene-Ferritin Biomolecular Junctions

Understanding the mechanisms of charge transport (CT) across biomolecules in solid-state devices is imperative to realize biomolecular electronic devices in a predictive manner. Although it is well-accepted that biomolecule-electrode interactions play an essential role, it is often overlooked. This paper reveals the prominent role of graphene interfaces with Fe-storing proteins in the net CT across their tunnel junctions. Here, ferritin (AfFtn-AA) is adsorbed on the graphene by noncovalent amine-graphene interactions confirmed with Raman spectroscopy. In contrast to junctions with metal electrodes, graphene has a vanishing density of states toward its intrinsic Fermi level ("Dirac point"), which increases away from the Fermi level. Therefore, the amount of charge carriers is highly sensitive to temperature and electrostatic charging (induced doping), as deduced from a detailed analysis of CT as a function of temperature and iron loading. Remarkably, the temperature dependence can be fully explained within the coherent tunneling regime due to excitation of hot carriers. Graphene is not only demonstrated as an alternative platform to study CT across biomolecular tunnel junctions, but it also opens rich possibilities in employing interface electrostatics in tuning CT behavior.

From Materials to Devices: Graphene toward Practical Applications

Graphene, as an emerging 2D material, has been playing an important role in flexible electronics since its discovery in 2004. The representative fabrication methods of graphene include mechanical exfoliation, liquid-phase exfoliation, chemical vapor deposition, redox reaction, etc. Based on its excellent mechanical, electrical, thermo-acoustical, optical, and other properties, graphene has made a great progress in the development of mechanical sensors, microphone, sound source, electrophysiological detection, solar cells, synaptic transistors, light-emitting devices, and so on. In different application fields, large-scale, low-cost, high-quality, and excellent performance are important factors that limit the industrialization development of graphene. Therefore, laser scribing technology, roll-to-roll technology is used to reduce the cost. High-quality graphene can be obtained through chemical vapor deposition processes. The performance can be improved through the design of structure of the devices, and the homogeneity and stability of devices can be achieved by mechanized machining means. In total, graphene devices show promising prospect for the practical fields of sports monitoring, health detection, voice recognition, energy, etc. There is a hot issue for industry to create and maintain the market competitiveness of graphene products through increasing its versatility and killer application fields.

Synthetic carbon nanomaterials for electrochemical energy conversion

Carbon nanomaterials have attracted widespread attention in electrochemical energy conversion due to their large surface area, excellent electrical/thermal conductivity and good chemical stability. However, the structure-activity relationship of carbon nanomaterials remains unclear. This review is thus on the synthesis methods of carbon nanomaterials including two-dimensional graphene, graphene nanoribbons, nanographene, heteroatom doped porous carbon and graphdiyne as electrocatalysts for the hydrogen evolution reaction, oxygen evolution reaction, and oxygen reduction reaction in fuel cells, electrolyzers and CO₂ reduction. The correlation between the electronic/chemical properties and electrochemical performance of synthetic carbon nanostructures will be profoundly discussed. Additionally, the emerging challenges and some perspectives on the development of synthetic carbon nanomaterials for electrochemical energy conversion are discussed.

Charge Transfer Dynamics of Doped Graphene Electrodes for Organic Light-Emitting Diodes

Atomically thin graphene has attracted immense attention as a future transparent electrode for flat-panel displays owing to its excellent conductivity, optical transparency, and flexibility. In particular, a graphene doping process is essential for implementing graphene-based high-performance devices, and the development of a transparent cathode with a low work function is required to simplify the integration process of thin-film transistors and organic light-emitting diodes (OLEDs) into active matrix displays. In this study, a transparent n-doped graphene cathode is proposed for implementing inverted OLEDs through two types of cesium (Cs)-based doping techniques: a dipping method using wet chemicals and an evaporation method under a vacuum atmosphere. The changes in the chemical structures and work functions of the n-doped graphene electrodes, as well as their surface morphologies and transmittances, were systematically investigated. The n-type doping mechanism of graphene was investigated, and a close relationship between the electrical charge transfer characteristics of graphene transistors and the formation of C-O-Cs complexes was revealed. Finally, an effective Cs-doped graphene electrode was developed, exhibiting a dramatically decreased work function while maintaining high transmittance; therefore, the Cs-doped graphene cathode was successfully integrated with inverted OLEDs with a bottom-light emission structure that exhibited enhanced external quantum efficiency of graphene cathode-based OLEDs. Thus, our findings provide a better understanding of the doping strategies and potential of n-doped graphene as a transparent cathode for developing high-performance future displays.

The carbon chain growth during the onset of CVD graphene formation on γ-Al2O3 is promoted by unsaturated CH2 ends

Chemical vapor deposition of methane onto a template of alumina (Al₂O₃) nanoparticles is a prominent synthetic strategy of graphene meso-sponge, a new class of nano porous carbon materials consisting of single-layer graphene walls. However, the elementary steps controlling the early stages of graphene growth on Al₂O₃ surfaces are still not well understood. In this study, density functional theory calculations provide insights into the initial stages of graphene growth. We have modelled the mechanism of CH₄ dissociation on the (111), (110), (100), and (001) γ-Al₂O₃ surfaces. Subsequently, we have considered the reaction pathway leading to the formation of a C6 ring. The γ-Al₂O₃(110) and γ-Al₂O₃(100) are both active for CH₄ dissociation, but the (100) surface has higher catalytic activity towards the carbon growth reaction. The overall mechanism involves the formation of the reactive intermediate CH₂* that then can couple to form C_nH_2n* (n = 2-6) intermediates with unsaturated CH₂ ends. The formation of these species, which are not bound to the surface-active sites, promotes the sustained carbon growth in a nearly barrierless process. Also, the short distance between terminal carbon atoms leads to strong interactions, which might lead to the high activity between unsaturated CH₂* of the hydrocarbon chain. Analysis of the electron localization and geometries of the carbon chains reveals the formation of C-Al-σ bonds with the chain growing towards the vacuum rather than C-Al-π bonds covering the γ-Al₂O₃(100) surface. This growth behaviour prevents catalyst poisoning during the initial stage of graphene nucleation.

Enhanced Water Evaporation from Å-Scale Graphene Nanopores

Enhancing the kinetics of liquid-vapor transition from nanoscale confinements is an attractive strategy for developing evaporation and separation applications. The ultimate limit of confinement for evaporation is an atom thick interface hosting angstrom-scale nanopores. Herein, using a combined experimental/computational approach, we report highly enhanced water evaporation rates when angstrom sized oxygen-functionalized graphene nanopores are placed at the liquid-vapor interface. The evaporation flux increases for the smaller nanopores with an enhancement up to 35-fold with respect to the bare liquid-vapor interface. Molecular dynamics simulations reveal that oxygen-functionalized nanopores render rapid rotational and translational dynamics to the water molecules due to a reduced and short-lived water-water hydrogen bonding. The potential of mean force (PMF) reveals that the free energy barrier for water evaporation decreases in the presence of nanopores at the atomically thin interface, which further explains the enhancement in evaporation flux. These findings can enable the development of energy-efficient technologies relying on water evaporation.

Towards ballistic transport CVD graphene by controlled removal of polymer residues

Polymer-assisted wet transfer of chemical vapor deposited (CVD) graphene has achieved great success towards the true potential for large-scale electronic applications, while the lack of an efficient polymer removal method has been regarded as a crucial factor for realizing high carrier mobility in graphene devices. Hereby, we report an efficient and facile method to clean polymer residues on graphene surface by merely employing solvent mixture of isopropanol (IPA) and water (H₂O). Raman spectroscopy shows an intact crystal structure of graphene after treatment, and the x-ray photoelectron spectroscopy indicates a significant decrease in the C-O and C=O bond signals, which is mainly attributed to the removal of polymer residues and further confirmed by subsequent atomic force microscopy analysis. More importantly, our gated measurements demonstrate that the proposed approach has resulted in a 3-fold increase of the carrier mobility in CVD graphene with the electron mobility close to 10 000 cm²V^-1S^-1, corresponding to an electron mean free path beyond 100 nm. This intrigues the promising application for this novel method in achieving ballistic transport for CVD graphene devices.

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO₂/Si exhibited high carrier mobility reaching up ~10,000 cm² V⁻¹ s⁻¹, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm² V⁻¹ s⁻¹. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.

Defect-free integration of 2D materials onto semiconductor wafers is desired to implement heterogeneous electronic devices. Here, the authors report a method to transfer high-quality graphene on target wafers via gradient surface energy modulation, leading to improved structural and electronic properties.

Machine Learning for Property Prediction and Optimization of Polymeric Nanocomposites: A State-of-the-Art

Recently, the field of polymer nanocomposites has been an area of high scientific and industrial attention due to noteworthy improvements attained in these materials, arising from the synergetic combination of properties of a polymeric matrix and an organic or inorganic nanomaterial. The enhanced performance of those materials typically involves superior mechanical strength, toughness and stiffness, electrical and thermal conductivity, better flame retardancy and a higher barrier to moisture and gases. Nanocomposites can also display unique design possibilities, which provide exceptional advantages in developing multifunctional materials with desired properties for specific applications. On the other hand, machine learning (ML) has been recognized as a powerful predictive tool for data-driven multi-physical modelling, leading to unprecedented insights and an exploration of the system’s properties beyond the capability of traditional computational and experimental analyses. This article aims to provide a brief overview of the most important findings related to the application of ML for the rational design of polymeric nanocomposites. Prediction, optimization, feature identification and uncertainty quantification are presented along with different ML algorithms used in the field of polymeric nanocomposites for property prediction, and selected examples are discussed. Finally, conclusions and future perspectives are highlighted.

Defect seeded remote epitaxy of GaAs films on graphene

Remote epitaxy is an emerging materials synthesis technique which employs a 2D interface layer, often graphene, to enable the epitaxial deposition of low defect single crystal films while restricting bonding between the growth layer and the underlying substrate. This allows for the subsequent release of the epitaxial film for integration with other systems and reuse of growth substrates. This approach is applicable to material systems with an ionic component to their bonding, making it notably appealing for III-V alloys, which are a technologically important family of materials. Chemical vapour deposition growth of graphene and wet transfer to a III-V substrate with a polymer handle is a potentially scalable and low cost approach to producing the required growth surface for remote epitaxy of these materials, however, the presence of water promotes the formation of a III-V oxide layer, which degrades the quality of subsequently grown epitaxial films. This work demonstrates the use of an argon ion beam for the controlled introduction of defects in a monolayer graphene interface layer to enable the growth of a single crystal GaAs film by molecular beam epitaxy, despite the presence of a native oxide at the substrate/graphene interface. A hybrid mechanism of defect seeded lateral overgrowth with remote epitaxy contributing the coalescence of the film is indicated. The exfoliation of the GaAs films reveals the presence of defect seeded nucleation sites, highlighting the need to balance the benefits of defect seeding on crystal quality against the requirement for subsequent exfoliation of the film, for future large area development of this approach.

Effect of Diatomite on the Thermal Degradation Behavior of Polypropylene and Formation of Graphene Products

In this work, the thermogravimetry–Fourier transform infrared spectroscopy (TG–FTIR) and gas chromatography–mass spectrometry (GC–MS) techniques are used to investigate the thermal degradation behavior of polypropylene (PP) with 20 wt.% diatomite (DM). The initial decomposition temperature of these blends was 17 °C lower than that of pristine PP, and more olefin degradation products were formed during the pyrolysis process under Ar atmosphere. These results could be attributed to the catalytic effects of DM on the degradation of PP and the changes of PP chain scission pathways around the particles (more β scission happened via the secondary radical transfer). These olefins could be caught by DM through the Si–O–C bond formed during the heat–treatment around 400~500 °C. The formation of the cross–linked structure could facilitate the growth of graphene during a high–temperature graphitization process.

Discovery of Graphene-Water Membrane Structure: Toward High-Quality Graphene Process

It is widely accepted that solid-state membranes are indispensable media for the graphene process, particularly transfer procedures. But these membranes inevitably bring contaminations and residues to the transferred graphene and consequently compromise the material quality. This study reports a newly observed free-standing graphene-water membrane structure, which replaces the conventional solid-state supporting media with liquid film to sustain the graphene integrity and continuity. Experimental observation, theoretical model, and molecular dynamics simulations consistently indicate that the high surface tension of pure water and its large contact angle with graphene are essential factors for forming such a membrane structure. More interestingly, water surface tension ensures the flatness of graphene layers and renders high transfer quality on many types of target substrates. This report enriches the understanding of the interactions on reduced dimensional material while rendering an alternative approach for scalable layered material processing with ensured quality for advanced manufacturing.

Tuning Schottky Barrier of Single-Layer MoS2 Field-Effect Transistors with Graphene Electrodes

Two-dimensional materials have the potential to be applied in flexible and transparent electronics. In this study, single-layer MoS₂ field-effect transistors (FETs) with Au/Ti-graphene heteroelectrodes were fabricated to examine the effect of the electrodes on the electrical properties of the MoS₂ FETs. The contact barrier potential was tuned using an electric field. Asymmetrical gate behavior was observed owing to the difference between the MoS₂ FETs, specifically between the MoS₂ FETs with Au/Ti electrodes and those with graphene electrodes. The contact barrier of the MoS₂ FETs with Au/Ti electrodes did not change with the electric field. However, the contact barrier at the MoS₂-graphene interface could be modulated. The MoS₂ FETs with Au/Ti-graphene electrodes exhibited enhanced on/off ratios (~10² times) and electron mobility (~2.5 times) compared to the MoS₂ FETs with Au/Ti electrodes. These results could improve the understanding of desirable contact formation for high-performance MoS₂ FETs and provide a facile route for viable electronic applications.