201
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Yin H, Gao X, Liu J, Chen P. Synthesis of N-Doped Few-Layer Graphene through Shock-Induced Carbon Fixation from CO 2. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:109. [PMID: 36616019 PMCID: PMC9824553 DOI: 10.3390/nano13010109] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 12/22/2022] [Accepted: 12/22/2022] [Indexed: 06/17/2023]
Abstract
In this study, graphene and N-doped graphene nanosheets were synthesized through the shock-induced reduction of CO2 using a cylindrical shock-loading apparatus. The mixture of solid CO2 and Mg powder was filled in the pre-cooled sample tube and then impacted by a shock-driven cylindrical flyer tube. The impact generated a shockwave that propagated into the mixed precursor, inducing a chemical reaction between CO2 and Mg at a high shock pressure and high shock temperature. The recovered black powders were characterized via various techniques, confirming the presences of few-layer graphene. The mechanism is carefully shown to be that CO2 was reduced by Mg to form few-layer graphene under shock-induced high pressure and high temperature. By adding carbamide as an N source, this synthetic route was also applied to synthesize N-doped graphene nanosheets. Moreover, the yield and mass of the graphene materials in this study are up to 40% and 0.5 g, respectively. This study showed an efficient and easy-to-scale-up route to prepare few-layer graphene and N-doped few-layer graphene through shock synthesis.
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Affiliation(s)
- Hao Yin
- Institute of Systems Engineering, China Academy of Engineering Physics, Mianyang 612900, China
| | - Xin Gao
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, China
- Advanced Technology Research Institute, Beijing Institute of Technology, Jinan 250307, China
| | - Jianjun Liu
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Pengwan Chen
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, China
- Advanced Technology Research Institute, Beijing Institute of Technology, Jinan 250307, China
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202
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Liu N, Wang HW. Better Cryo-EM Specimen Preparation: How to Deal with the Air-Water Interface? J Mol Biol 2022; 435:167926. [PMID: 36563741 DOI: 10.1016/j.jmb.2022.167926] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Revised: 12/08/2022] [Accepted: 12/14/2022] [Indexed: 12/24/2022]
Abstract
Cryogenic electron microscopy (cryo-EM) is now one of the most powerful and widely used methods to determine high-resolution structures of macromolecules. A major bottleneck of cryo-EM is to prepare high-quality vitrified specimen, which still faces many practical challenges. During the conventional vitrification process, macromolecules tend to adsorb at the air-water interface (AWI), which is known unfriendly to biological samples. In this review, we outline the nature of AWI and the problems caused by it, such as unpredictable or uneven particle distribution, protein denaturation, dissociation of complex and preferential orientation. We review and discuss the approaches and underlying mechanisms to deal with AWI: 1) Additives, exemplified by detergents, forming a protective layer at AWI and thus preserving the native folds of target macromolecules. 2) Fast vitrification devices based on the idea to freeze in-solution macromolecules before their touching of AWI. 3) Thin layer of continuous supporting films to adsorb macromolecules, and when functionalized with affinity ligands, to specifically anchor the target particles away from the AWI. Among these supporting films, graphene, together with its derivatives, with negligible background noise and mechanical robustness, has emerged as a new generation of support. These strategies have been proven successful in various cases and enable us a better handling of the problems caused by the AWI in cryo-EM specimen preparation.
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Affiliation(s)
- Nan Liu
- Ministry of Education Key Laboratory of Protein Sciences, Beijing Advanced Innovation Center for Structural Biology, Beijing Frontier Research Center for Biological Structures, School of Life Sciences, Tsinghua University, Beijing 100084, China
| | - Hong-Wei Wang
- Ministry of Education Key Laboratory of Protein Sciences, Beijing Advanced Innovation Center for Structural Biology, Beijing Frontier Research Center for Biological Structures, School of Life Sciences, Tsinghua University, Beijing 100084, China; Tsinghua-Peking Joint Center for Life Sciences, Tsinghua University, Beijing 100084, China.
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203
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Alipour S, Hassani M, Hosseini SMH, Mousavi-Khoshdel SM. Facile preparation of covalently functionalized graphene with 2,4-dinitrophenylhydrazine and investigation of its characteristics. RSC Adv 2022; 13:558-569. [PMID: 36605623 PMCID: PMC9772862 DOI: 10.1039/d2ra06343c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2022] [Accepted: 12/15/2022] [Indexed: 12/24/2022] Open
Abstract
This article reports a fast and easy method for simultaneously in situ reducing and functionalizing graphene oxide. 2,4-Dinitrophenylhydrazine hydrate salt molecules are reduced by graphene oxide by reacting with oxide groups on the surface and removing these groups, and 2,4-dinitrophenylhydrazone groups are replaced with oxide groups. The synthesized materials have been investigated using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), and UV absorption. Also, the morphology has been examined with a scanning electron microscope (SEM) and Brunauer-Emmett-Teller (BET) analysis. The result of the photocurrent response and electrochemical behavior of the samples through cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy (EIS) have been analyzed to investigate the effect of physical and chemical changes compared to graphene.
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Affiliation(s)
- S. Alipour
- Department of Chemistry, Iran University of Science and Technology (IUST)NarmakTehranIran+982177240480+982177240480
| | - M. Hassani
- Department of Chemistry, Iran University of Science and Technology (IUST)NarmakTehranIran+982177240480+982177240480
| | - S. M. H. Hosseini
- Department of Chemistry, Iran University of Science and Technology (IUST)NarmakTehranIran+982177240480+982177240480
| | - S. M. Mousavi-Khoshdel
- Department of Chemistry, Iran University of Science and Technology (IUST)NarmakTehranIran+982177240480+982177240480
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204
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Fabrication of Inorganic Coatings Incorporated with Functionalized Graphene Oxide Nanosheets for Improving Fire Retardancy of Wooden Substrates. Polymers (Basel) 2022; 14:polym14245542. [PMID: 36559909 PMCID: PMC9784433 DOI: 10.3390/polym14245542] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 11/18/2022] [Accepted: 12/03/2022] [Indexed: 12/23/2022] Open
Abstract
Flame-retardant chemicals are frequently used within consumer products and can even be employed as a treatment on the surface of different types of materials (e.g., wood, steel, and textiles) to prevent fire or limit the rapid spread of flames. Functionalized graphene oxide (FGO) nanosheets are a promising construction coating nanomaterial that can be blended with sodium metasilicate and gypsum to reduce the flammability of construction buildings. In this work, we designed and fabricated novel and halogen-free FGO sheets using the modified Hummers method; and subsequently functionalized them by pentaerythritol through a chemical impregnation process before dispersing them within the construction coating. Scanning electron microscopic images confirm that the FGO-filled coating was uniformly dispersed on the surface of wooden substrates. We identified that the FGO content is a critical factor affecting the fire retardancy. Thermogravimetric analysis of the FGO coating revealed that higher char residue can be obtained at 700 °C. Based on the differential scanning calorimetry, the exothermic peak contained a temperature delay in the presence of FGO sheets, primarily due to the formation of a thermal barrier. Such a significant improvement in the flame retardancy confirms that the FGO nanosheets are superior nanomaterials to be employed as a flame-retardant construction coating nanomaterial for improving thermal management within buildings.
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205
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Zhou T, Xu C, Ren W. Grain-Boundary-Induced Ultrasensitive Molecular Detection of Graphene Film. NANO LETTERS 2022; 22:9380-9388. [PMID: 36455614 DOI: 10.1021/acs.nanolett.2c03218] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Graphene has been considered a promising platform for molecular detection due to the graphene-enhanced Raman scattering (GERS) effect. However, the GERS performance of pristine graphene is limited by a low chemically active surface and insufficient density of states (DOS). Although diverse defects have been introduced, it remains a great challenge to improve the enhancement performance. Here, we show that graphene grain boundaries (GBs) possess stronger adsorption capacity and more abundant DOS. Thus, GERS performance increases with the atomic percentage of GBs, which makes nanocrystalline graphene (NG) film a superior GERS substrate. For R6G as a probe molecule, a low detection limit of 3 × 10-10 M was achieved. Utilizing the high chemical activity of GBs, we also fabricated NG film decorated with Au particles using a one-step quenching strategy, and this hybrid film exhibits an extremely low limit of detection down to 5 × 10-11 M, outperforming all the reported graphene-based systems.
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Affiliation(s)
- Tianya Zhou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, P. R. China
| | - Chuan Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, P. R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, P. R. China
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206
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Blecha T, Vlčková Živcová Z, Sonia FJ, Mergl M, Volochanskyi O, Bodnár M, Rous P, Mizohata K, Kalbáč M, Frank O. Electrical Contact Resistance of Large-Area Graphene on Pre-Patterned Cu and Au Electrodes. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4444. [PMID: 36558297 PMCID: PMC9780872 DOI: 10.3390/nano12244444] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 12/10/2022] [Accepted: 12/12/2022] [Indexed: 06/17/2023]
Abstract
Contact resistance between electrically connected parts of electronic elements can negatively affect their resulting properties and parameters. The contact resistance is influenced by the physicochemical properties of the connected elements and, in most cases, the lowest possible value is required. The issue of contact resistance is also addressed in connection with the increasingly frequently used carbon allotropes. This work aimed to determine the factors that influence contact resistance between graphene prepared by chemical vapour deposition and pre-patterned Cu and Au electrodes onto which graphene is subsequently transferred. It was found that electrode surface treatment methods affect the resistance between Cu and graphene, where contact resistance varied greatly, with an average of 1.25 ± 1.54 kΩ, whereas for the Au electrodes, the deposition techniques did not influence the resulting contact resistance, which decreased by almost two orders of magnitude compared with the Cu electrodes, to 0.03 ± 0.01 kΩ.
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Affiliation(s)
- Tomáš Blecha
- Faculty of Electrical Engineering, University of West Bohemia, Univerzitní 2795/8, 301 00 Pilsen, Czech Republic
| | - Zuzana Vlčková Živcová
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
| | - Farjana J. Sonia
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
| | - Martin Mergl
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
| | - Oleksandr Volochanskyi
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
- Department of Physical Chemistry, Faculty of Chemical Engineering, University of Chemistry and Technology, Technicka 5, 166 28 Prague, Czech Republic
| | - Michal Bodnár
- Tesla Blatná a.s., Palackého 644, 388 01 Blatná, Czech Republic
| | - Pavel Rous
- Faculty of Electrical Engineering, University of West Bohemia, Univerzitní 2795/8, 301 00 Pilsen, Czech Republic
| | - Kenichiro Mizohata
- Department of Physics, Helsinki University, P.O. Box 43, 00014 Helsinki, Finland
| | - Martin Kalbáč
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
| | - Otakar Frank
- J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejškova 2155/3, 182 23 Prague, Czech Republic
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207
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Work Function of Layered Graphene Prepared by Chemical Vapor Deposition in High Vacuum. E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY 2022. [DOI: 10.1380/ejssnt.2023-011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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208
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Wang J, Park JH, Lu AY, Kong J. Electrical Control of Chemical Vapor Deposition of Graphene. J Am Chem Soc 2022; 144:22925-22932. [DOI: 10.1021/jacs.2c08001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Jiangtao Wang
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Ji-Hoon Park
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Ang-Yu Lu
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Jing Kong
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
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209
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Smaisim GF, Abed AM, Al-Madhhachi H, Hadrawi SK, Al-Khateeb HMM, Kianfar E. Graphene-Based Important Carbon Structures and Nanomaterials for Energy Storage Applications as Chemical Capacitors and Supercapacitor Electrodes: a Review. BIONANOSCIENCE 2022. [DOI: 10.1007/s12668-022-01048-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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210
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Tian B, Li J, Samad A, Schwingenschlögl U, Lanza M, Zhang X. Production of Large-Area Nucleus-Free Single-Crystal Graphene-Mesh Metamaterials with Zigzag Edges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201253. [PMID: 35307871 DOI: 10.1002/adma.202201253] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2022] [Revised: 03/07/2022] [Indexed: 06/14/2023]
Abstract
In addition to conventional monolayer or bilayer graphene films, graphene-mesh metamaterials have attracted considerable research attention within the scientific community owing to their unique physical and optical properties. Currently, most graphene-mesh metamaterials are fabricated using common lithography techniques on exfoliated graphene flakes, which require the deposition and removal of chemicals during fabrication. This process may introduce contamination or doping, thereby limiting their production size and application in nanodevices. Herein, the controlled production of wafer-scale high-quality single-crystal nucleus-free graphene-mesh metamaterial films with zigzag edges is demonstrated. The 13 C-isotopic labeling graphene-growth approach, large-area Raman mapping techniques, and a uniquely designed high-voltage localized-space air-ionization etching method are utilized to directly remove the graphene nuclei. Subsequently, a hydrogen-assisted anisotropic etching process is employed for transforming irregular edges into zigzag edges within the hexagonal-shaped holes, producing a large-scale single-crystal high-quality graphene-mesh metamaterial film on a Cu(111) substrate. The carrier mobilities of the fabricated field-effect transistors on the as-produced films are measured. The findings of this study enable the large-scale production of high-quality low-dimensional graphene-mesh metamaterials and provide insights for the application of integrated circuits based on graphene and other 2D metamaterials.
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Affiliation(s)
- Bo Tian
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Junzhu Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Abdus Samad
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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211
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Shen Y, Dong Z, Sun Y, Guo H, Wu F, Li X, Tang J, Liu J, Wu X, Tian H, Ren TL. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201916. [PMID: 35535757 DOI: 10.1002/adma.202201916] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.
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Affiliation(s)
- Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zuoyuan Dong
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Yabin Sun
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Hao Guo
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xianglong Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Jun Tang
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Jun Liu
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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212
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Ci H, Chen J, Ma H, Sun X, Jiang X, Liu K, Shan J, Lian X, Jiang B, Liu R, Liu B, Yang G, Yin W, Zhao W, Huang L, Gao T, Sun J, Liu Z. Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206389. [PMID: 36208081 DOI: 10.1002/adma.202206389] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V-1 s-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.
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Affiliation(s)
- Haina Ci
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, 266061, P. R. China
| | - Jingtao Chen
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hao Ma
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China
| | - Xiaoli Sun
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Xingyu Jiang
- Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Kaicong Liu
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jingyuan Shan
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xueyu Lian
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
| | - Bei Jiang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ruojuan Liu
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Bingzhi Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Guiqi Yang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wanjian Yin
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wen Zhao
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China
| | - Lizhen Huang
- Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Teng Gao
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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213
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Li S, Yang Y, Wang S, Gao Y, Song Z, Chen L, Chen Z. Advances in metal graphitic nanocapsules for biomedicine. EXPLORATION (BEIJING, CHINA) 2022; 2:20210223. [PMID: 37324797 PMCID: PMC10191027 DOI: 10.1002/exp.20210223] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 02/21/2022] [Indexed: 06/16/2023]
Abstract
Metal graphitic nanocapsules have the advantages of both graphitic and metal nanomaterials, showing great promise in biomedicine. On one hand, the chemically inert graphitic shells are able to protect the metal core from external environments, quench the fluorescence signal from the biological system, offer robust platform for targeted molecules or drugs loading, and act as stable Raman labels or internal standard molecule. On the other hand, the metal cores with different compositions, sizes, and morphologies show unique physicochemical properties, and further broaden their biomedical functions. In this review, we firstly introduce the preparation, classification, and properties of metal graphitic nanocapsules, then summarize the recent progress of their applications in biodetection, bioimaging, and therapy. Challenges and their development prospects in biomedicine are eventually discussed in detail. We expect the versatile metal graphitic nanocapsules will advance the development of future clinical biomedicine.
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Affiliation(s)
- Shengkai Li
- Molecular Science and Biomedicine Laboratory (MBL)State Key Laboratory of Chemo/Bio‐Sensing and ChemometricsCollege of Chemistry and Chemical EngineeringAptamer Engineering Center of Hunan ProvinceHunan Provincial Key Laboratory of Biomacromolecular Chemical BiologyHunan UniversityChangshaChina
| | - Yanxia Yang
- Molecular Science and Biomedicine Laboratory (MBL)State Key Laboratory of Chemo/Bio‐Sensing and ChemometricsCollege of Chemistry and Chemical EngineeringAptamer Engineering Center of Hunan ProvinceHunan Provincial Key Laboratory of Biomacromolecular Chemical BiologyHunan UniversityChangshaChina
| | - Shen Wang
- Molecular Science and Biomedicine Laboratory (MBL)State Key Laboratory of Chemo/Bio‐Sensing and ChemometricsCollege of Chemistry and Chemical EngineeringAptamer Engineering Center of Hunan ProvinceHunan Provincial Key Laboratory of Biomacromolecular Chemical BiologyHunan UniversityChangshaChina
| | - Yang Gao
- College of Materials Science and EngineeringHunan Province Key Laboratory for Advanced Carbon Materials and Applied TechnologyHunan UniversityChangshaChina
| | - Zhiling Song
- Key Laboratory of Optic‐Electric Sensing and Analytical Chemistry for Life ScienceMOEShandong Key Laboratory of Biochemical AnalysisCollege of Chemistry and Molecular EngineeringQingdao University of Science and TechnologyQingdaoChina
| | - Long Chen
- Faculty of Science and TechnologyUniversity of MacauMacau SARChina
| | - Zhuo Chen
- Molecular Science and Biomedicine Laboratory (MBL)State Key Laboratory of Chemo/Bio‐Sensing and ChemometricsCollege of Chemistry and Chemical EngineeringAptamer Engineering Center of Hunan ProvinceHunan Provincial Key Laboratory of Biomacromolecular Chemical BiologyHunan UniversityChangshaChina
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214
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Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
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Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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215
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Wu S, Li H, Futaba DN, Chen G, Chen C, Zhou K, Zhang Q, Li M, Ye Z, Xu M. Structural Design and Fabrication of Multifunctional Nanocarbon Materials for Extreme Environmental Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201046. [PMID: 35560664 DOI: 10.1002/adma.202201046] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Revised: 04/27/2022] [Indexed: 06/15/2023]
Abstract
Extreme environments represent numerous harsh environmental conditions, such as temperature, pressure, corrosion, and radiation. The tolerance of applications in extreme environments exemplifies significant challenges to both materials and their structures. Given the superior mechanical strength, electrical conductivity, thermal stability, and chemical stability of nanocarbon materials, such as carbon nanotubes (CNTs) and graphene, they are widely investigated as base materials for extreme environmental applications and have shown numerous breakthroughs in the fields of wide-temperature structural-material construction, low-temperature energy storage, underwater sensing, and electronics operated at high temperatures. Here, the critical aspects of structural design and fabrication of nanocarbon materials for extreme environments are reviewed, including a description of the underlying mechanism supporting the performance of nanocarbon materials against extreme environments, the principles of structural design of nanocarbon materials for the optimization of extreme environmental performances, and the fabrication processes developed for the realization of specific extreme environmental applications. Finally, perspectives on how CNTs and graphene can further contribute to the development of extreme environmental applications are presented.
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Affiliation(s)
- Sijia Wu
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Huajian Li
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Don N Futaba
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Guohai Chen
- Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Chen Chen
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Kechen Zhou
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qifan Zhang
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Miao Li
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zonglin Ye
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ming Xu
- School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
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216
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Ali M, Dong Y, Lv J, Guo H, Abid Anwar M, Tian F, Shahzad K, Liu W, Yu B, Bodepudi SC, Xu Y. In-Situ Monitoring of Reciprocal Charge Transfer and Losses in Graphene-Silicon CCD Pixels. SENSORS (BASEL, SWITZERLAND) 2022; 22:9341. [PMID: 36502042 PMCID: PMC9735458 DOI: 10.3390/s22239341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Revised: 11/23/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Charge-coupled devices (CCD) allow imaging by photodetection, charge integration, and serial transfer of the stored charge packets from multiple pixels to the readout node. The functionality of CCD can be extended to the non-destructive and in-situ readout of the integrated charges by replacing metallic electrodes with graphene in the metal-oxide-semiconductors (MOS) structure of a CCD pixel. The electrostatic capacitive coupling of graphene with the substrate allows the Fermi level tuning that reflects the integrated charge density in the depletion well. This work demonstrates the in-situ monitoring of the serial charge transfer and interpixel transfer losses in a reciprocating manner between two adjacent Gr-Si CCD pixels by benefitting the electrostatic and gate-to-gate couplings. We achieved the maximum charge transfer efficiency (CTE) of 92.4%, which is mainly decided by the inter-pixel distance, phase clock amplitudes, switching slopes, and density of surface defects. The discussion on overcoming transfer losses and improving CTE by realizing a graphene-electron multiplication CCD is also presented. The proof of the concept of the in-situ readout of the out-of-plane avalanche in a single Gr-Si CCD pixel is also demonstrated, which can amplify the photo packet in a pre-transfer manner.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Bin Yu
- Correspondence: (B.Y.); (S.C.B.); (Y.X.)
| | | | - Yang Xu
- Correspondence: (B.Y.); (S.C.B.); (Y.X.)
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217
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Kim Y, Han H, Luo D, Ruoff RS, Shin HJ. Decoupling of CVD-grown epitaxial graphene using NaCl intercalation. NANOSCALE 2022; 14:16929-16935. [PMID: 36345667 DOI: 10.1039/d2nr05660g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The structural and electronic properties of graphene grown on catalytic metal surfaces are significantly modified via graphene-substrate interaction. To minimize the influence of the metal substrate, a dielectric buffer layer can be introduced between the graphene and metal substrate. However, the catalytic synthesis of graphene limits the potential alternatives for buffer layers. The intercalation of atoms below the graphene layer is a promising method that does not require the chemical treatment of graphene or the substrate. In this study, the electronic and structural properties of single-layer graphene (SLG) on the Cu(111) substrate intercalated with ultrathin NaCl thin films were investigated using scanning tunnelling microscopy. The intercalation of the NaCl monolayer decoupled SLG from the metal substrate, thereby producing quasi-freestanding graphene.
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Affiliation(s)
- Yohan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Huijun Han
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyung-Joon Shin
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
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218
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Kang MS, Lee WY, Yoon YG, Choi JW, Kim GS, Kim SH, Park NW, Lee SK. Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe 2/MoS 2 Heterostructures Using Wet-Transfer Stacking. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51881-51888. [PMID: 36355622 DOI: 10.1021/acsami.2c14065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe2 film on high-resistance (HR) semiconducting MoS2 (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe2 (3 nm)/HR-MoS2 (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 μV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe2/HR-MoS2 heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.
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Affiliation(s)
- Min-Sung Kang
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Won-Yong Lee
- Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala75103, Sweden
| | - Young-Gui Yoon
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Jae Won Choi
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Gil-Sung Kim
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Si-Hoo Kim
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - No-Won Park
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
| | - Sang-Kwon Lee
- Department of Physics and Center for Berry Curvature Based New Phenomena, Chung-Ang University, Seoul06974, Republic of Korea
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219
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Biobased Kapok Fiber Nano-Structure for Energy and Environment Application: A Critical Review. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27228107. [PMID: 36432208 PMCID: PMC9699385 DOI: 10.3390/molecules27228107] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/01/2022] [Revised: 11/08/2022] [Accepted: 11/12/2022] [Indexed: 11/23/2022]
Abstract
The increasing degradation of fossil fuels has motivated the globe to turn to green energy solutions such as biofuel in order to minimize the entire reliance on fossil fuels. Green renewable resources have grown in popularity in recent years as a result of the advancement of environmental technology solutions. Kapok fiber is a sort of cellulosic fiber derived from kapok tree seeds (Ceiba pentandra). Kapok Fiber, as a bio-template, offers the best alternatives to provide clean and renewable energy sources. The unique structure, good conductivity, and excellent physical properties exhibited by kapok fiber nominate it as a highly favored cocatalyst for deriving solar energy processes. This review will explore the role and recent developments of KF in energy production, including hydrogen and CO2 reduction. Moreover, this work summarized the potential of kapok fiber in environmental applications, including adsorption and degradation. The future contribution and concerns are highlighted in order to provide perspective on the future advancement of kapok fiber.
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220
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Moulick S, Alam R, Pal AN. Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51105-51112. [PMID: 36323003 DOI: 10.1021/acsami.2c14499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The substrate plays a crucial role in determining the transport and low-frequency noise behavior of graphene field-effect devices. Typically, a heavily doped Si/SiO2 substrate is used to fabricate these devices for efficient gating. Trapping-detrapping processes close to the graphene/substrate interface are the dominant sources of resistance fluctuations in the graphene channel, while Coulomb fluctuations arising due to any remote charge fluctuations inside the bulk of the substrate are effectively screened by the heavily doped substrate. Here, we present the electronic transport and low-frequency noise characteristics of a large-area CVD graphene field-effect transistor (FET) prepared on a lightly doped Si/SiO2 substrate (NA ≈ 1015 cm-3). Through a systematic characterization of transport, noise, and capacitance at various temperatures, we reveal that the remote Si/SiO2 interface can affect the charge transport in graphene severely and any charge fluctuations inside the bulk of the silicon substrate can be sensed by the graphene channel. The resistance (R) vs back-gate voltage (Vbg) characteristics of the device show a hump around the depletion region formed at the SiO2/Si interface, confirmed by the capacitance (C)-voltage (V) measurement. A low-frequency noise measurement on these fabricated devices shows a peak in the noise amplitude close to the depletion region. This indicates that due to the absence of any charge layer at the Si/SiO2 interface, the screening ability decreases, and as a consequence, any fluctuations in the deep-level Coulomb impurities inside the silicon substrate can be observed as noise in resistance in the graphene channel via mobility fluctuations. The noise behavior on ionic liquid-gated graphene on the same substrate exhibits no such peak in noise and can be explained by the interfacial trapping-detrapping processes close to the graphene channel. Our study will definitely be useful for integrating graphene with the existing silicon technology, in particular, for high-frequency applications.
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Affiliation(s)
- Shubhadip Moulick
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata700106, India
| | - Rafiqul Alam
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata700106, India
| | - Atindra Nath Pal
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata700106, India
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221
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Kanjwal MA, Ghaferi AA. Graphene Incorporated Electrospun Nanofiber for Electrochemical Sensing and Biomedical Applications: A Critical Review. SENSORS (BASEL, SWITZERLAND) 2022; 22:8661. [PMID: 36433257 PMCID: PMC9697565 DOI: 10.3390/s22228661] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Revised: 10/27/2022] [Accepted: 11/03/2022] [Indexed: 06/16/2023]
Abstract
The extraordinary material graphene arrived in the fields of engineering and science to instigate a material revolution in 2004. Graphene has promptly risen as the super star due to its outstanding properties. Graphene is an allotrope of carbon and is made up of sp2-bonded carbon atoms placed in a two-dimensional honeycomb lattice. Graphite consists of stacked layers of graphene. Due to the distinctive structural features as well as excellent physico-chemical and electrical conductivity, graphene allows remarkable improvement in the performance of electrospun nanofibers (NFs), which results in the enhancement of promising applications in NF-based sensor and biomedical technologies. Electrospinning is an easy, economical, and versatile technology depending on electrostatic repulsion between the surface charges to generate fibers from the extensive list of polymeric and ceramic materials with diameters down to a few nanometers. NFs have emerged as important and attractive platform with outstanding properties for biosensing and biomedical applications, because of their excellent functional features, that include high porosity, high surface area to volume ratio, high catalytic and charge transfer, much better electrical conductivity, controllable nanofiber mat configuration, biocompatibility, and bioresorbability. The inclusion of graphene nanomaterials (GNMs) into NFs is highly desirable. Pre-processing techniques and post-processing techniques to incorporate GNMs into electrospun polymer NFs are precisely discussed. The accomplishment and the utilization of NFs containing GNMs in the electrochemical biosensing pathway for the detection of a broad range biological analytes are discussed. Graphene oxide (GO) has great importance and potential in the biomedical field and can imitate the composition of the extracellular matrix. The oxygen-rich GO is hydrophilic in nature and easily disperses in water, and assists in cell growth, drug delivery, and antimicrobial properties of electrospun nanofiber matrices. NFs containing GO for tissue engineering, drug and gene delivery, wound healing applications, and medical equipment are discussed. NFs containing GO have importance in biomedical applications, which include engineered cardiac patches, instrument coatings, and triboelectric nanogenerators (TENGs) for motion sensing applications. This review deals with graphene-based nanomaterials (GNMs) such as GO incorporated electrospun polymeric NFs for biosensing and biomedical applications, that can bridge the gap between the laboratory facility and industry.
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222
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Hadid J, Colambo I, Avila J, Plaud A, Boyaval C, Deresmes D, Nuns N, Dudin P, Loiseau A, Barjon J, Wallart X, Vignaud D. Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen. NANOTECHNOLOGY 2022; 34:035601. [PMID: 36228546 DOI: 10.1088/1361-6528/ac99e5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Accepted: 10/12/2022] [Indexed: 06/16/2023]
Abstract
2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ∼20μm.
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Affiliation(s)
- Jawad Hadid
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F-59000 Lille, France
| | - Ivy Colambo
- Inst. Math. Sci. Phys., Univ. of the Philippines Los Banos, Laguna 4031, Philippines
| | - Jose Avila
- Synchrotron SOLEIL & Université Paris-Saclay, F-91192 Gif sur Yvette, France
| | - Alexandre Plaud
- Université Paris-Saclay,UVSQ, CNRS, Groupe d'Etude de la Matière Condensée, 45 avenue des Etats-Unis,F-78035 Versailles Cedex, France
- Laboratoire d'Etude des Microstructures (LEM), CNRS-ONERA, Université Paris Saclay, 29 Avenue de la Division Leclerc, F-92320 Chatillon, France
| | - Christophe Boyaval
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F-59000 Lille, France
| | - Dominique Deresmes
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F-59000 Lille, France
| | - Nicolas Nuns
- Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. d'Artois, IMEC-Institut Michel-Eugène Chevreul F-59000 Lille, France
| | - Pavel Dudin
- Synchrotron SOLEIL & Université Paris-Saclay, F-91192 Gif sur Yvette, France
| | - Annick Loiseau
- Laboratoire d'Etude des Microstructures (LEM), CNRS-ONERA, Université Paris Saclay, 29 Avenue de la Division Leclerc, F-92320 Chatillon, France
| | - Julien Barjon
- Université Paris-Saclay,UVSQ, CNRS, Groupe d'Etude de la Matière Condensée, 45 avenue des Etats-Unis,F-78035 Versailles Cedex, France
| | - Xavier Wallart
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F-59000 Lille, France
| | - Dominique Vignaud
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F-59000 Lille, France
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223
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Graphene/Polymer Nanocomposites: Preparation, Mechanical Properties, and Application. Polymers (Basel) 2022; 14:polym14214733. [PMID: 36365726 PMCID: PMC9655120 DOI: 10.3390/polym14214733] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/02/2022] [Accepted: 11/03/2022] [Indexed: 11/09/2022] Open
Abstract
Although polymers are very important and vastly used materials, their physical properties are limited. Therefore, they are reinforced with fillers to relieve diverse restrictions and expand their application areas. The exceptional properties of graphene make it an interesting material with huge potential for application in various industries and devices. The interfacial interaction between graphene and the polymer matrix improved the uniform graphene dispersion in the polymer matrix, enhancing the general nanocomposite performance. Therefore, graphene functionalization is essential to enhance the interfacial interaction, maintain excellent properties, and obstruct graphene agglomeration. Many studies have reported that graphene/polymer nanocomposites have exceptional properties that enable diverse applications. The use of graphene/polymer nanocomposites is expected to increase sustainably and to transform from a basic to an advanced material to offer optimum solutions to industry and consumers.
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224
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Li J, Samad A, Schwingenschlögl U, Tian B, Lanza M, Zhang X. Morphology-Control Growth of Graphene Islands by Nonlinear Carbon Supply. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206080. [PMID: 36052575 DOI: 10.1002/adma.202206080] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 08/18/2022] [Indexed: 06/15/2023]
Abstract
Controlling the morphology of graphene and other 2D materials in chemical vapor deposition (CVD) growth is crucial because the morphology reflects the crystal quality of as-synthesized nanomaterials in a certain way, and consequently it indirectly represents the physical properties of 2D materials such as bandgap, selective ion transportation, and impermeability. However, precise control of the morphology is limited by the complex formation mechanism and sensitive growth-environment factors of graphene. Therefore, the CVD synthesis of single-crystal hexagonal-shaped graphene islands with specific sizes is challenging. Herein, an unconventional nonlinear-carbon-supply growth strategy is proposed to realize controllable CVD growth of desired hexagonal graphene islands with specific sizes on Cu substrates. Large-area graphene films of isolated islands with desired densities, sizes, and distances between the islands are successfully synthesized. Subsequently, the direct growth of a planar-tunnel-junction structure based on two parallel gapped graphene islands is achieved by specific adjustment of the growth and etching processes of graphene CVD synthesis. It is therefore demonstrated that the nonlinear-carbon-supply growth strategy is a reliable method for the synthesis of high-quality graphene and can facilitate the direct growth of graphene-based nanodevices in the future.
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Affiliation(s)
- Junzhu Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Abdus Samad
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Bo Tian
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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225
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Shen J, He Y, Gao C, Yang B, Tao X, Wang M, Ye G. Catalyst-free growth of single- to few-layered graphene and carbon nanotubes on an ionic liquid surface. Colloids Surf A Physicochem Eng Asp 2022. [DOI: 10.1016/j.colsurfa.2022.130025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2022]
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226
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Dimitropoulos M, Trakakis G, Androulidakis C, Kotsidi M, Galiotis C. Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures. NANOTECHNOLOGY 2022; 34:025601. [PMID: 36215949 DOI: 10.1088/1361-6528/ac98d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.
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Affiliation(s)
- Marinos Dimitropoulos
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - George Trakakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Charalampos Androulidakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Maria Kotsidi
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Costas Galiotis
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
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227
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Progress in the experimental and computational methods of work function evaluation of materials: A review. Heliyon 2022; 8:e11030. [PMID: 36339992 PMCID: PMC9626890 DOI: 10.1016/j.heliyon.2022.e11030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Revised: 08/16/2022] [Accepted: 10/06/2022] [Indexed: 11/06/2022] Open
Abstract
The work function, which determines the behaviour of electrons in a material, remains a crucial factor in surface science to understand the corrosion rates and interfacial engineering in making photosensitive and electron-emitting devices. The present article reviews the various experimental methods and theoretical models employed for work function measurement along with their merits and demerits are discussed. Reports from the existing methods of work function measurements that Kelvin probe force microscopy (KPFM) is the most suitable measurement technique over other experimental methods. It has been observed from the literature that the computational methods that are capable of predicting the work functions of different metals have a higher computational cost. However, the stabilized Jellium model (SJM) has the potential to predict the work function of transition metals, simple metals, rare-earth metals and inner transition metals. The metallic plasma model (MPM) can predict polycrystalline metals, while the density functional theory (DFT) is a versatile tool for predicting the lowest and highest work function of the material with higher computational cost. The high-throughput density functional theory and machine learning (HTDFTML) tools are suitable for predicting the lowest and highest work functions of extreme material surfaces with cheaper computational cost. The combined Bayesian machine learning and first principle (CBMLFP) is suitable for predicting the lowest and highest work functions of the materials with a very low computational cost. Conclusively, HTDFTML and CBMLFP should be used to explore the work functions and surface energy in complex materials.
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228
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Urade AR, Lahiri I, Suresh KS. Graphene Properties, Synthesis and Applications: A Review. JOM (WARRENDALE, PA. : 1989) 2022; 75:614-630. [PMID: 36267692 PMCID: PMC9568937 DOI: 10.1007/s11837-022-05505-8] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Accepted: 08/29/2022] [Indexed: 06/12/2023]
Abstract
We have evaluated some of the most recent breakthroughs in the synthesis and applications of graphene and graphene-based nanomaterials. This review includes three major categories. The first section consists of an overview of the structure and properties, including thermal, optical, and electrical transport. Recent developments in the synthesis techniques are elaborated in the second section. A number of top-down strategies for the synthesis of graphene, including exfoliation and chemical reduction of graphene oxide, are discussed. A few bottom-up synthesis methods for graphene are also covered, including thermal chemical vapor deposition, plasma-enhanced chemical vapor deposition, thermal decomposition of silicon, unzipping of carbon nanotubes, and others. The final section provides the recent innovations in graphene applications and the commercial availability of graphene-based devices.
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Affiliation(s)
- Akanksha R. Urade
- Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667 India
| | - Indranil Lahiri
- Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667 India
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667 India
| | - K. S. Suresh
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667 India
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229
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Günder D, Diez-Cabanes V, Huttner A, Breuer T, Lemaur V, Cornil J, Witte G. F-Center-Mediated Growth of Patterned Organic Semiconductor Films on Alkali Halides. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46086-46094. [PMID: 36191090 DOI: 10.1021/acsami.2c13934] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Organic semiconductors combine flexible tailoring of their optoelectronic properties by synthetic means with strong light-matter coupling, which is advantageous for organic electronic device applications. Although spatially selective deposition has been demonstrated, lateral patterning of organic films with simultaneous control of molecular and crystalline orientation is lacking as traditional lithography is not applicable. Here, a new patterning approach based on surface-localized F-centers (halide vacancies) generated by electron irradiation of alkali halides is presented, which allows structural control of molecular adlayers. Combining optical and atomic force microscopy, X-ray diffraction, and density functional theory (DFT) calculations, it is shown that dinaphthothienothiophene (DNTT) molecules adopt an upright orientation on pristine KCl surfaces, while the F-centers stabilize a recumbent orientation, and that these orientations are maintained in thicker films. This specific nucleation results also in different crystallographic morphologies, namely, densely packed islands and jagged fibers, each epitaxially aligned on the KCl surface. Spatially selective surface irradiation can also be used to create patterns of F-centers and thus laterally patterned DNTT films, which can be further transferred to any (including elastomer) substrate due to the water solubility of the alkali halide growth templates.
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Affiliation(s)
- Darius Günder
- Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany
| | - Valentin Diez-Cabanes
- Laboratory for Chemistry of Novel Materials, University of Mons (UMONS), BE-7000 Mons, Belgium
- Laboratoire de Physique et Chimie Théoriques (LPCT), Université de Lorraine & CNRS, F-54000 Nancy, France
| | - Andrea Huttner
- Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany
| | - Tobias Breuer
- Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany
| | - Vincent Lemaur
- Laboratory for Chemistry of Novel Materials, University of Mons (UMONS), BE-7000 Mons, Belgium
| | - Jérôme Cornil
- Laboratory for Chemistry of Novel Materials, University of Mons (UMONS), BE-7000 Mons, Belgium
| | - Gregor Witte
- Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany
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230
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Elviretti M, Lisker M, Lukose R, Lukosius M, Akhtar F, Mai A. Reliable metal-graphene contact formation process flows in a CMOS-compatible environment. NANOSCALE ADVANCES 2022; 4:4373-4380. [PMID: 36321140 PMCID: PMC9552920 DOI: 10.1039/d2na00351a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Accepted: 08/30/2022] [Indexed: 06/16/2023]
Abstract
The possibility of exploiting the enormous potential of graphene for microelectronics and photonics must go through the optimization of the graphene-metal contact. Achieving low contact resistance is essential for the consideration of graphene as a candidate material for electronic and photonic devices. This work has been carried out in an 8'' wafer pilot-line for the integration of graphene into a CMOS environment. The main focus is to study the impact of the patterning of graphene and passivation on metal-graphene contact resistance. The latter is measured by means of transmission line measurement (TLM) with several contact designs. The presented approaches enable reproducible formation of contact resistivity as low as 660 Ω μm with a sheet resistance of 1.8 kΩ/□ by proper graphene patterning, passivation of the channel and a post-processing treatment such as annealing.
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Affiliation(s)
- M Elviretti
- IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany +49 335 5625 300 +49 335 5625 346
| | - M Lisker
- IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany +49 335 5625 300 +49 335 5625 346
- Technical University of Applied Sciences Wildau Hochschulring 1 15745 Wildau Germany
| | - R Lukose
- IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany +49 335 5625 300 +49 335 5625 346
| | - M Lukosius
- IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany +49 335 5625 300 +49 335 5625 346
| | - F Akhtar
- IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany +49 335 5625 300 +49 335 5625 346
| | - A Mai
- IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany +49 335 5625 300 +49 335 5625 346
- Technical University of Applied Sciences Wildau Hochschulring 1 15745 Wildau Germany
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231
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Sfameni S, Del Tedesco A, Rando G, Truant F, Visco A, Plutino MR. Waterborne Eco-Sustainable Sol-Gel Coatings Based on Phytic Acid Intercalated Graphene Oxide for Corrosion Protection of Metallic Surfaces. Int J Mol Sci 2022; 23:ijms231912021. [PMID: 36233325 PMCID: PMC9569461 DOI: 10.3390/ijms231912021] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 10/01/2022] [Accepted: 10/08/2022] [Indexed: 11/16/2022] Open
Abstract
In the past few years, corrosion protection of metal materials has become a global challenge, due to its great economic importance. For this reason, various methods have been developed to inhibit the corrosion process, such as surface treatment approaches, by employing corrosion inhibitors through the deposition of opportunely designed functional coatings, employed to preserve from corrosion damages metallic substrates. Recently, among these techniques and in order to avoid the toxic chromate-based pre-treatment coatings, silane-based coatings and films loaded with organic and inorganic corrosion inhibitors have been widely used in corrosion mitigation water-based surface treatment. In this study, the synthetic approach was devoted to create an embedded, hosted, waterborne, and eco-friendly matrix, obtained by use of the sol–gel technique, through the reaction of functional alkoxysilane cross-linking precursors, namely (3-glycidyloxypropyl)trimethoxysilane (GPTMS) and (3-aminopropyl)triethoxysilane (APTES), in the presence of graphene oxide (GO) intercalated with natural and non-toxic phytic acid (PA) molecules. As a matter of fact, all experimental results from FT-IR spectroscopy, UV–Vis analysis, and SEM confirmed that PA molecules were successfully decorated on GO. Furthermore, polarization measurements and a neutral salt spray test were used to evaluate the anticorrosive performance on aluminum and steel substrates, thus showing that the GO-PA nanofiller improved the barrier and corrosion protection properties of the developed functional silane-based coatings.
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Affiliation(s)
- Silvia Sfameni
- Department of Engineering, University of Messina, Contrada di Dio, S. Agata, 98166 Messina, Italy
- Institute for the Study of Nanostructured Materials, ISMN—CNR, Palermo, c/o Department of ChiBioFarAm, University of Messina, Viale F. Stagno d’Alcontres 31, Vill. S. Agata, 98166 Messina, Italy
| | - Anna Del Tedesco
- Noxorsokem Group Srl, Via Udine 46, SS 13, 33080 Cusano di Zoppola, Italy
| | - Giulia Rando
- Institute for the Study of Nanostructured Materials, ISMN—CNR, Palermo, c/o Department of ChiBioFarAm, University of Messina, Viale F. Stagno d’Alcontres 31, Vill. S. Agata, 98166 Messina, Italy
- Department of ChiBioFarAm, University of Messina, Viale F. Stagno d’Alcontres 31, Vill. S. Agata, 98166 Messina, Italy
| | - Fulvio Truant
- Noxorsokem Group Srl, Via Udine 46, SS 13, 33080 Cusano di Zoppola, Italy
| | - Annamaria Visco
- Department of Engineering, University of Messina, Contrada di Dio, S. Agata, 98166 Messina, Italy
- Institute for Polymers, Composites and Biomaterials, CNR—IPCB, Via Paolo Gaifami 18, 95126 Catania, Italy
| | - Maria Rosaria Plutino
- Institute for the Study of Nanostructured Materials, ISMN—CNR, Palermo, c/o Department of ChiBioFarAm, University of Messina, Viale F. Stagno d’Alcontres 31, Vill. S. Agata, 98166 Messina, Italy
- Correspondence:
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232
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Gupta N, Karuppannan SK, Pasula RR, Vilan A, Martin J, Xu W, May EM, Pike AR, Astier HPA, Salim T, Lim S, Nijhuis CA. Temperature-Dependent Coherent Tunneling across Graphene-Ferritin Biomolecular Junctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:44665-44675. [PMID: 36148983 PMCID: PMC9542697 DOI: 10.1021/acsami.2c11263] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Accepted: 09/08/2022] [Indexed: 06/16/2023]
Abstract
Understanding the mechanisms of charge transport (CT) across biomolecules in solid-state devices is imperative to realize biomolecular electronic devices in a predictive manner. Although it is well-accepted that biomolecule-electrode interactions play an essential role, it is often overlooked. This paper reveals the prominent role of graphene interfaces with Fe-storing proteins in the net CT across their tunnel junctions. Here, ferritin (AfFtn-AA) is adsorbed on the graphene by noncovalent amine-graphene interactions confirmed with Raman spectroscopy. In contrast to junctions with metal electrodes, graphene has a vanishing density of states toward its intrinsic Fermi level ("Dirac point"), which increases away from the Fermi level. Therefore, the amount of charge carriers is highly sensitive to temperature and electrostatic charging (induced doping), as deduced from a detailed analysis of CT as a function of temperature and iron loading. Remarkably, the temperature dependence can be fully explained within the coherent tunneling regime due to excitation of hot carriers. Graphene is not only demonstrated as an alternative platform to study CT across biomolecular tunnel junctions, but it also opens rich possibilities in employing interface electrostatics in tuning CT behavior.
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Affiliation(s)
- Nipun
Kumar Gupta
- Department
of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Centre
for Advanced 2D Materials, National University
of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Senthil Kumar Karuppannan
- Department
of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Rupali Reddy Pasula
- School
of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore 637457, Singapore
| | - Ayelet Vilan
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 76100, Israel
| | - Jens Martin
- Centre
for Advanced 2D Materials, National University
of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Wentao Xu
- Centre
for Advanced 2D Materials, National University
of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Esther Maria May
- Chemistry-School
of Natural and Environmental Sciences, Newcastle
University, Newcastle
upon Tyne NE1 7RU, U.K.
| | - Andrew R. Pike
- School
of
Materials Science and Engineering, Nanyang
Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Hippolyte P. A.
G. Astier
- Department
of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Teddy Salim
- School
of
Materials Science and Engineering, Nanyang
Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Sierin Lim
- School
of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore 637457, Singapore
| | - Christian A. Nijhuis
- Department
of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Centre
for Advanced 2D Materials, National University
of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
- Hybrid
Materials for Opto-Electronics Group, Department of Molecules and
Materials, MESA+ Institute for Nanotechnology and Centre for Brain-Inspired
Nano Systems, Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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233
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Recent progress in two-dimensional nanomaterials for cancer theranostics. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2022.214654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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234
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Monajjemi M, Mollaamin F, Najaflou N, Sakhaeinia H. Physical Chemistry Study of Graphite Liquid Exfoliation through (π–π) Interaction by (n)-Annulene. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A 2022. [DOI: 10.1134/s0036024422100247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2022]
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235
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Yang Y, Wei Y, Guo Z, Hou W, Liu Y, Tian H, Ren TL. From Materials to Devices: Graphene toward Practical Applications. SMALL METHODS 2022; 6:e2200671. [PMID: 36008156 DOI: 10.1002/smtd.202200671] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Indexed: 06/15/2023]
Abstract
Graphene, as an emerging 2D material, has been playing an important role in flexible electronics since its discovery in 2004. The representative fabrication methods of graphene include mechanical exfoliation, liquid-phase exfoliation, chemical vapor deposition, redox reaction, etc. Based on its excellent mechanical, electrical, thermo-acoustical, optical, and other properties, graphene has made a great progress in the development of mechanical sensors, microphone, sound source, electrophysiological detection, solar cells, synaptic transistors, light-emitting devices, and so on. In different application fields, large-scale, low-cost, high-quality, and excellent performance are important factors that limit the industrialization development of graphene. Therefore, laser scribing technology, roll-to-roll technology is used to reduce the cost. High-quality graphene can be obtained through chemical vapor deposition processes. The performance can be improved through the design of structure of the devices, and the homogeneity and stability of devices can be achieved by mechanized machining means. In total, graphene devices show promising prospect for the practical fields of sports monitoring, health detection, voice recognition, energy, etc. There is a hot issue for industry to create and maintain the market competitiveness of graphene products through increasing its versatility and killer application fields.
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Affiliation(s)
- Yi Yang
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Yuhong Wei
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zhanfeng Guo
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Weiwei Hou
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yingjie Liu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - He Tian
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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236
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Wang L, Liu Z, Zhang J. Synthetic carbon nanomaterials for electrochemical energy conversion. NANOSCALE 2022; 14:13473-13489. [PMID: 36094008 DOI: 10.1039/d2nr03865j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Carbon nanomaterials have attracted widespread attention in electrochemical energy conversion due to their large surface area, excellent electrical/thermal conductivity and good chemical stability. However, the structure-activity relationship of carbon nanomaterials remains unclear. This review is thus on the synthesis methods of carbon nanomaterials including two-dimensional graphene, graphene nanoribbons, nanographene, heteroatom doped porous carbon and graphdiyne as electrocatalysts for the hydrogen evolution reaction, oxygen evolution reaction, and oxygen reduction reaction in fuel cells, electrolyzers and CO2 reduction. The correlation between the electronic/chemical properties and electrochemical performance of synthetic carbon nanostructures will be profoundly discussed. Additionally, the emerging challenges and some perspectives on the development of synthetic carbon nanomaterials for electrochemical energy conversion are discussed.
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Affiliation(s)
- Lanlan Wang
- State Key Laboratory for Manufacturing Systems Engineering, Xi'An Jiaotong University, Xi' an, 710049, P. R. China
| | - Zhenpeng Liu
- State Key Laboratory of Solidification Processing and School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, 710129, P. R. China.
| | - Jian Zhang
- State Key Laboratory of Solidification Processing and School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, 710129, P. R. China.
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237
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Park IJ, Kim TI, Choi SY. Charge Transfer Dynamics of Doped Graphene Electrodes for Organic Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:43907-43916. [PMID: 36123321 DOI: 10.1021/acsami.2c12006] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Atomically thin graphene has attracted immense attention as a future transparent electrode for flat-panel displays owing to its excellent conductivity, optical transparency, and flexibility. In particular, a graphene doping process is essential for implementing graphene-based high-performance devices, and the development of a transparent cathode with a low work function is required to simplify the integration process of thin-film transistors and organic light-emitting diodes (OLEDs) into active matrix displays. In this study, a transparent n-doped graphene cathode is proposed for implementing inverted OLEDs through two types of cesium (Cs)-based doping techniques: a dipping method using wet chemicals and an evaporation method under a vacuum atmosphere. The changes in the chemical structures and work functions of the n-doped graphene electrodes, as well as their surface morphologies and transmittances, were systematically investigated. The n-type doping mechanism of graphene was investigated, and a close relationship between the electrical charge transfer characteristics of graphene transistors and the formation of C-O-Cs complexes was revealed. Finally, an effective Cs-doped graphene electrode was developed, exhibiting a dramatically decreased work function while maintaining high transmittance; therefore, the Cs-doped graphene cathode was successfully integrated with inverted OLEDs with a bottom-light emission structure that exhibited enhanced external quantum efficiency of graphene cathode-based OLEDs. Thus, our findings provide a better understanding of the doping strategies and potential of n-doped graphene as a transparent cathode for developing high-performance future displays.
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Affiliation(s)
- Ick-Joon Park
- Department of Electrical and Electronic Engineering, Joongbu University, Goyang 10279, Korea
| | - Tae In Kim
- Department of Electrical Engineering, Inha University, Incheon 22212, Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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238
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Zhao Q, Yamamoto M, Yamazaki K, Nishihara H, Crespo-Otero R, Di Tommaso D. The carbon chain growth during the onset of CVD graphene formation on γ-Al 2O 3 is promoted by unsaturated CH 2 ends. Phys Chem Chem Phys 2022; 24:23357-23366. [PMID: 36165844 DOI: 10.1039/d2cp01554d] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Chemical vapor deposition of methane onto a template of alumina (Al2O3) nanoparticles is a prominent synthetic strategy of graphene meso-sponge, a new class of nano porous carbon materials consisting of single-layer graphene walls. However, the elementary steps controlling the early stages of graphene growth on Al2O3 surfaces are still not well understood. In this study, density functional theory calculations provide insights into the initial stages of graphene growth. We have modelled the mechanism of CH4 dissociation on the (111), (110), (100), and (001) γ-Al2O3 surfaces. Subsequently, we have considered the reaction pathway leading to the formation of a C6 ring. The γ-Al2O3(110) and γ-Al2O3(100) are both active for CH4 dissociation, but the (100) surface has higher catalytic activity towards the carbon growth reaction. The overall mechanism involves the formation of the reactive intermediate CH2* that then can couple to form CnH2n* (n = 2-6) intermediates with unsaturated CH2 ends. The formation of these species, which are not bound to the surface-active sites, promotes the sustained carbon growth in a nearly barrierless process. Also, the short distance between terminal carbon atoms leads to strong interactions, which might lead to the high activity between unsaturated CH2* of the hydrocarbon chain. Analysis of the electron localization and geometries of the carbon chains reveals the formation of C-Al-σ bonds with the chain growing towards the vacuum rather than C-Al-π bonds covering the γ-Al2O3(100) surface. This growth behaviour prevents catalyst poisoning during the initial stage of graphene nucleation.
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Affiliation(s)
- Qi Zhao
- Department of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, UK.
| | - Masanori Yamamoto
- Advanced Institute for Materials Research (WPI-AIMR)/Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
| | - Kaoru Yamazaki
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
| | - Hirotomo Nishihara
- Advanced Institute for Materials Research (WPI-AIMR)/Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
| | - Rachel Crespo-Otero
- Department of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, UK.
| | - Devis Di Tommaso
- Department of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, UK.
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239
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Lee WC, Ronghe A, Villalobos LF, Huang S, Dakhchoune M, Mensi M, Hsu KJ, Ayappa KG, Agrawal KV. Enhanced Water Evaporation from Å-Scale Graphene Nanopores. ACS NANO 2022; 16:15382-15396. [PMID: 36000823 PMCID: PMC9527801 DOI: 10.1021/acsnano.2c07193] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Accepted: 08/19/2022] [Indexed: 05/26/2023]
Abstract
Enhancing the kinetics of liquid-vapor transition from nanoscale confinements is an attractive strategy for developing evaporation and separation applications. The ultimate limit of confinement for evaporation is an atom thick interface hosting angstrom-scale nanopores. Herein, using a combined experimental/computational approach, we report highly enhanced water evaporation rates when angstrom sized oxygen-functionalized graphene nanopores are placed at the liquid-vapor interface. The evaporation flux increases for the smaller nanopores with an enhancement up to 35-fold with respect to the bare liquid-vapor interface. Molecular dynamics simulations reveal that oxygen-functionalized nanopores render rapid rotational and translational dynamics to the water molecules due to a reduced and short-lived water-water hydrogen bonding. The potential of mean force (PMF) reveals that the free energy barrier for water evaporation decreases in the presence of nanopores at the atomically thin interface, which further explains the enhancement in evaporation flux. These findings can enable the development of energy-efficient technologies relying on water evaporation.
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Affiliation(s)
- Wan-Chi Lee
- Laboratory
of Advanced Separations (LAS), École
Polytechnique Fédérale de Lausanne (EPFL), Sion 1950, Switzerland
| | - Anshaj Ronghe
- Department
of Chemical Engineering, Indian Institute
of Science, Bangalore, 560012, India
| | - Luis Francisco Villalobos
- Laboratory
of Advanced Separations (LAS), École
Polytechnique Fédérale de Lausanne (EPFL), Sion 1950, Switzerland
| | - Shiqi Huang
- Laboratory
of Advanced Separations (LAS), École
Polytechnique Fédérale de Lausanne (EPFL), Sion 1950, Switzerland
| | - Mostapha Dakhchoune
- Laboratory
of Advanced Separations (LAS), École
Polytechnique Fédérale de Lausanne (EPFL), Sion 1950, Switzerland
| | - Mounir Mensi
- Institut
des Sciences et Ingénierie Chimiques (ISIC), EPFL, Sion 1950, Switzerland
| | - Kuang-Jung Hsu
- Laboratory
of Advanced Separations (LAS), École
Polytechnique Fédérale de Lausanne (EPFL), Sion 1950, Switzerland
| | - K. Ganapathy Ayappa
- Department
of Chemical Engineering, Indian Institute
of Science, Bangalore, 560012, India
| | - Kumar Varoon Agrawal
- Laboratory
of Advanced Separations (LAS), École
Polytechnique Fédérale de Lausanne (EPFL), Sion 1950, Switzerland
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240
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Polai B, Satpathy BK, Jena BK, Nayak SK. An Overview of Coating Processes on Metal Substrates Based on Graphene-Related Materials for Multifarious Applications. Ind Eng Chem Res 2022. [DOI: 10.1021/acs.iecr.2c02147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Balaram Polai
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar−752050, India
| | - Bijoy Kumar Satpathy
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar−752050, India
| | - Bikash Kumar Jena
- CSIR−Institute of Minerals and Materials Technology Bhubaneswar−751013, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Saroj Kumar Nayak
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar−752050, India
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241
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Duan T, Li H, Papadakis R, Leifer K. Towards ballistic transport CVD graphene by controlled removal of polymer residues. NANOTECHNOLOGY 2022; 33:495704. [PMID: 36041409 DOI: 10.1088/1361-6528/ac8d9b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Accepted: 08/29/2022] [Indexed: 06/15/2023]
Abstract
Polymer-assisted wet transfer of chemical vapor deposited (CVD) graphene has achieved great success towards the true potential for large-scale electronic applications, while the lack of an efficient polymer removal method has been regarded as a crucial factor for realizing high carrier mobility in graphene devices. Hereby, we report an efficient and facile method to clean polymer residues on graphene surface by merely employing solvent mixture of isopropanol (IPA) and water (H2O). Raman spectroscopy shows an intact crystal structure of graphene after treatment, and the x-ray photoelectron spectroscopy indicates a significant decrease in the C-O and C=O bond signals, which is mainly attributed to the removal of polymer residues and further confirmed by subsequent atomic force microscopy analysis. More importantly, our gated measurements demonstrate that the proposed approach has resulted in a 3-fold increase of the carrier mobility in CVD graphene with the electron mobility close to 10 000 cm2V-1S-1, corresponding to an electron mean free path beyond 100 nm. This intrigues the promising application for this novel method in achieving ballistic transport for CVD graphene devices.
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Affiliation(s)
- Tianbo Duan
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, 250101 Jinan, People's Republic of China
- Department of Materials Science and Engineering, Ångström Laboratory, Uppsala University, SE-75121 Uppsala, Sweden
| | - Hu Li
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, 250101 Jinan, People's Republic of China
- Department of Materials Science and Engineering, Ångström Laboratory, Uppsala University, SE-75121 Uppsala, Sweden
- Shenzhen Research Institute of Shandong University, 518057 Shenzhen, People's Republic of China
| | | | - Klaus Leifer
- Shandong Technology Centre of Nanodevices and Integration, School of Microelectronics, Shandong University, 250101 Jinan, People's Republic of China
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242
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Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation. Nat Commun 2022; 13:5410. [PMID: 36109519 PMCID: PMC9477858 DOI: 10.1038/s41467-022-33135-w] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 09/02/2022] [Indexed: 11/11/2022] Open
Abstract
The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO2/Si exhibited high carrier mobility reaching up ~10,000 cm2 V−1 s−1, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm2 V−1 s−1. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics. Defect-free integration of 2D materials onto semiconductor wafers is desired to implement heterogeneous electronic devices. Here, the authors report a method to transfer high-quality graphene on target wafers via gradient surface energy modulation, leading to improved structural and electronic properties.
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243
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Champa-Bujaico E, García-Díaz P, Díez-Pascual AM. Machine Learning for Property Prediction and Optimization of Polymeric Nanocomposites: A State-of-the-Art. Int J Mol Sci 2022; 23:ijms231810712. [PMID: 36142623 PMCID: PMC9505448 DOI: 10.3390/ijms231810712] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Revised: 09/08/2022] [Accepted: 09/10/2022] [Indexed: 11/16/2022] Open
Abstract
Recently, the field of polymer nanocomposites has been an area of high scientific and industrial attention due to noteworthy improvements attained in these materials, arising from the synergetic combination of properties of a polymeric matrix and an organic or inorganic nanomaterial. The enhanced performance of those materials typically involves superior mechanical strength, toughness and stiffness, electrical and thermal conductivity, better flame retardancy and a higher barrier to moisture and gases. Nanocomposites can also display unique design possibilities, which provide exceptional advantages in developing multifunctional materials with desired properties for specific applications. On the other hand, machine learning (ML) has been recognized as a powerful predictive tool for data-driven multi-physical modelling, leading to unprecedented insights and an exploration of the system’s properties beyond the capability of traditional computational and experimental analyses. This article aims to provide a brief overview of the most important findings related to the application of ML for the rational design of polymeric nanocomposites. Prediction, optimization, feature identification and uncertainty quantification are presented along with different ML algorithms used in the field of polymeric nanocomposites for property prediction, and selected examples are discussed. Finally, conclusions and future perspectives are highlighted.
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Affiliation(s)
- Elizabeth Champa-Bujaico
- Universidad de Alcalá, Departamento de Teoría de la Señal y Comunicaciones, Ctra. Madrid-Barcelona Km. 33.6, 28805 Alcalá de Henares, Madrid, Spain
| | - Pilar García-Díaz
- Universidad de Alcalá, Departamento de Teoría de la Señal y Comunicaciones, Ctra. Madrid-Barcelona Km. 33.6, 28805 Alcalá de Henares, Madrid, Spain
| | - Ana M. Díez-Pascual
- Universidad de Alcalá, Facultad de Ciencias, Departamento de Química Analítica, Química Física e Ingeniería Química, Ctra. Madrid-Barcelona Km. 33.6, 28805 Alcalá de Henares, Madrid, Spain
- Correspondence:
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244
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Zulqurnain M, Burton OJ, Al-Hada M, Goff LE, Hofmann S, Hirst LC. Defect seeded remote epitaxy of GaAs films on graphene. NANOTECHNOLOGY 2022; 33:485603. [PMID: 35977453 DOI: 10.1088/1361-6528/ac8a4f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 08/15/2022] [Indexed: 06/15/2023]
Abstract
Remote epitaxy is an emerging materials synthesis technique which employs a 2D interface layer, often graphene, to enable the epitaxial deposition of low defect single crystal films while restricting bonding between the growth layer and the underlying substrate. This allows for the subsequent release of the epitaxial film for integration with other systems and reuse of growth substrates. This approach is applicable to material systems with an ionic component to their bonding, making it notably appealing for III-V alloys, which are a technologically important family of materials. Chemical vapour deposition growth of graphene and wet transfer to a III-V substrate with a polymer handle is a potentially scalable and low cost approach to producing the required growth surface for remote epitaxy of these materials, however, the presence of water promotes the formation of a III-V oxide layer, which degrades the quality of subsequently grown epitaxial films. This work demonstrates the use of an argon ion beam for the controlled introduction of defects in a monolayer graphene interface layer to enable the growth of a single crystal GaAs film by molecular beam epitaxy, despite the presence of a native oxide at the substrate/graphene interface. A hybrid mechanism of defect seeded lateral overgrowth with remote epitaxy contributing the coalescence of the film is indicated. The exfoliation of the GaAs films reveals the presence of defect seeded nucleation sites, highlighting the need to balance the benefits of defect seeding on crystal quality against the requirement for subsequent exfoliation of the film, for future large area development of this approach.
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Affiliation(s)
- Muhammad Zulqurnain
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Oliver J Burton
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Mohamed Al-Hada
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
| | - Lucy E Goff
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Louise C Hirst
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS United Kingdom
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245
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Chen Y, Wang B. Effect of Diatomite on the Thermal Degradation Behavior of Polypropylene and Formation of Graphene Products. Polymers (Basel) 2022; 14:polym14183764. [PMID: 36145906 PMCID: PMC9501155 DOI: 10.3390/polym14183764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2022] [Revised: 09/02/2022] [Accepted: 09/06/2022] [Indexed: 11/19/2022] Open
Abstract
In this work, the thermogravimetry–Fourier transform infrared spectroscopy (TG–FTIR) and gas chromatography–mass spectrometry (GC–MS) techniques are used to investigate the thermal degradation behavior of polypropylene (PP) with 20 wt.% diatomite (DM). The initial decomposition temperature of these blends was 17 °C lower than that of pristine PP, and more olefin degradation products were formed during the pyrolysis process under Ar atmosphere. These results could be attributed to the catalytic effects of DM on the degradation of PP and the changes of PP chain scission pathways around the particles (more β scission happened via the secondary radical transfer). These olefins could be caught by DM through the Si–O–C bond formed during the heat–treatment around 400~500 °C. The formation of the cross–linked structure could facilitate the growth of graphene during a high–temperature graphitization process.
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Affiliation(s)
| | - Biao Wang
- Correspondence: ; Tel.: +86-21-6779-2731
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246
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Ishaq S, Moussa M, Kanwal F, Ayub R, Van TN, Azhar U, Losic D. One step strategy for reduced graphene oxide/cobalt-iron oxide/polypyrrole nanocomposite preparation for high performance supercapacitor electrodes. Electrochim Acta 2022. [DOI: 10.1016/j.electacta.2022.140883] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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247
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Okmi A, Xiao X, Zhang Y, He R, Olunloyo O, Harris SB, Jabegu T, Li N, Maraba D, Sherif Y, Dyck O, Vlassiouk I, Xiao K, Dong P, Xu B, Lei S. Discovery of Graphene-Water Membrane Structure: Toward High-Quality Graphene Process. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201336. [PMID: 35856086 PMCID: PMC9475541 DOI: 10.1002/advs.202201336] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Revised: 06/05/2022] [Indexed: 06/15/2023]
Abstract
It is widely accepted that solid-state membranes are indispensable media for the graphene process, particularly transfer procedures. But these membranes inevitably bring contaminations and residues to the transferred graphene and consequently compromise the material quality. This study reports a newly observed free-standing graphene-water membrane structure, which replaces the conventional solid-state supporting media with liquid film to sustain the graphene integrity and continuity. Experimental observation, theoretical model, and molecular dynamics simulations consistently indicate that the high surface tension of pure water and its large contact angle with graphene are essential factors for forming such a membrane structure. More interestingly, water surface tension ensures the flatness of graphene layers and renders high transfer quality on many types of target substrates. This report enriches the understanding of the interactions on reduced dimensional material while rendering an alternative approach for scalable layered material processing with ensured quality for advanced manufacturing.
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Affiliation(s)
- Aisha Okmi
- Department of Physics and AstronomyGeorgia State UniversityAtlantaGA30303USA
- Department of PhysicsJazan UniversityJazan45142Saudi Arabia
| | - Xuemei Xiao
- Department of Mechanical and Aerospace EngineeringUniversity of VirginiaCharlottesvilleVA22904USA
| | - Yue Zhang
- Department of Mechanical and Aerospace EngineeringUniversity of VirginiaCharlottesvilleVA22904USA
| | - Rui He
- Department of Mechanical EngineeringGeorge Mason UniversityFairfax, VA22030USA
| | - Olugbenga Olunloyo
- Department of Physics and AstronomyUniversity of TennesseeKnoxvilleTN37996USA
| | - Sumner B. Harris
- Center for Nanophase Materials Sciences (CNMS)Oak Ridge National LabOak RidgeTN37830USA
| | - Tara Jabegu
- Department of Physics and AstronomyGeorgia State UniversityAtlantaGA30303USA
| | - Ningxin Li
- Department of Physics and AstronomyGeorgia State UniversityAtlantaGA30303USA
| | - Diren Maraba
- Department of Physics and AstronomyGeorgia State UniversityAtlantaGA30303USA
| | - Yasmeen Sherif
- Department of Physics and AstronomyGeorgia State UniversityAtlantaGA30303USA
| | - Ondrej Dyck
- Center for Nanophase Materials Sciences (CNMS)Oak Ridge National LabOak RidgeTN37830USA
| | - Ivan Vlassiouk
- Center for Nanophase Materials Sciences (CNMS)Oak Ridge National LabOak RidgeTN37830USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences (CNMS)Oak Ridge National LabOak RidgeTN37830USA
| | - Pei Dong
- Department of Mechanical EngineeringGeorge Mason UniversityFairfax, VA22030USA
| | - Baoxing Xu
- Department of Mechanical and Aerospace EngineeringUniversity of VirginiaCharlottesvilleVA22904USA
| | - Sidong Lei
- Department of Physics and AstronomyGeorgia State UniversityAtlantaGA30303USA
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248
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Gudkov MV, Stolyarova DY, Shiyanova KA, Mel’nikov VP. Polymer Composites with Graphene and Its Derivatives as Functional Materials of the Future. POLYMER SCIENCE SERIES C 2022. [DOI: 10.1134/s1811238222010027] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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249
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Jang AR. Tuning Schottky Barrier of Single-Layer MoS 2 Field-Effect Transistors with Graphene Electrodes. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3038. [PMID: 36080075 PMCID: PMC9458018 DOI: 10.3390/nano12173038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/04/2022] [Revised: 08/22/2022] [Accepted: 08/30/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional materials have the potential to be applied in flexible and transparent electronics. In this study, single-layer MoS2 field-effect transistors (FETs) with Au/Ti-graphene heteroelectrodes were fabricated to examine the effect of the electrodes on the electrical properties of the MoS2 FETs. The contact barrier potential was tuned using an electric field. Asymmetrical gate behavior was observed owing to the difference between the MoS2 FETs, specifically between the MoS2 FETs with Au/Ti electrodes and those with graphene electrodes. The contact barrier of the MoS2 FETs with Au/Ti electrodes did not change with the electric field. However, the contact barrier at the MoS2-graphene interface could be modulated. The MoS2 FETs with Au/Ti-graphene electrodes exhibited enhanced on/off ratios (~102 times) and electron mobility (~2.5 times) compared to the MoS2 FETs with Au/Ti electrodes. These results could improve the understanding of desirable contact formation for high-performance MoS2 FETs and provide a facile route for viable electronic applications.
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Affiliation(s)
- A-Rang Jang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan 31080, Korea
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250
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Functionalized graphene quantum dots obtained from graphene foams used for highly selective detection of Hg2+ in real samples. Anal Chim Acta 2022; 1232:340422. [DOI: 10.1016/j.aca.2022.340422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 07/28/2022] [Accepted: 09/19/2022] [Indexed: 11/22/2022]
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