Epitaxial growth and properties of doped transition metal and complex oxide films

Achieving High-Temperature Multiferroism by Atomic Architecture

Materials with multiple order parameters, typically, in which ferroelectricity and magnetism are coupled, are illuminative for next-generation multifunctional electronics. However, searching for such single-phase multiferroics is challenging owing to antagonistic orbital occupancy and chemical bonding requirements for polarity and magnetism. Appropriate multiferroic candidates have been proposed, but their practical implementation is impeded by the low working temperature, weak coupling between ferroic orders, or antiparallel spin alignment in magnetic sublattices. Here, we report a family of single-phase multiferroic materials in which high-temperature magnetism and voltage-switchable ferroelectricity are coupled. Using pulsed laser deposition, we have fabricated single-crystalline thin films incorporating a uniformly percolated open-shell dⁿ framework, which are composed of Fe cations with B-site occupancy and exhibit long-range spin ordering into the displacive ferroelectric PbTiO₃ lattice, as demonstrated by atomically resolved chemical analysis. The tetragonal polar Pb(Ti_1-x,Fe_x)O₃ (PFT(x), x ≤ 0.10) family exhibits a switchable ferroelectric nature and magnetic interaction with a moderate coercive field of around 300 Oe at room temperature. Notably, the magnetic order even persists above 500 K, which is higher than already reported potential multiferroic candidates until now. Our strategy of merging a spin-ordered sublattice into inherent ferroelectrics via atomic occupancy engineering provides an available pathway for highly thermally stable multiferroic and spintronic applications.

The Role of Strain in Proton Conduction in Multi-Oriented BaZr0.9Y0.1O3-δ Thin Film

Within the emerging field of proton-conducting fuel cells, BaZr_0.9Y_0.1O_3-δ (BZY10) is an attractive material due to its high conductivity and stability. The fundamentals of conduction in sintered pellets and thin films heterostructures have been explored in several studies; however, the role of crystallographic orientation, grains, and grain boundaries is poorly understood for proton conduction. This article reports proton conduction in a self-assembled multi-oriented BZY10 thin film grown on top of a (110) NdGaO₃ substrate. The multiple orientations are composed of different lattices, which provide a platform to study the lattice-dependent conductivity through different orientations in the vicinity of grain boundary between them and the substrate. The crystalline stacking of each orientation is confirmed by X-ray diffraction analysis and scanning transmission electron microscopy. The transport measurements are carried out under different gas atmospheres. The highest conductivity of 3.08 × 10^-3 S cm^-1 at 400 °C is found under a wet H₂ environment together with an increased lattice parameter of 4.208 Å, while under O₂ and Ar environments, the film shows lower conductivity and lattice parameter. Our findings not only demonstrate the role of crystal lattice for conduction properties but also illustrate the importance of self-assembled strategies to achieve high proton conduction in BZY10 thin films.

Solid-State Preparation of Metal and Metal Oxides Nanostructures and Their Application in Environmental Remediation

Nanomaterials have attracted much attention over the last decades due to their very different properties compared to those of bulk equivalents, such as a large surface-to-volume ratio, the size-dependent optical, physical, and magnetic properties. A number of solution fabrication methods have been developed for the synthesis of metal and metal oxides nanoparticles, but few solid-state methods have been reported. The application of nanostructured materials to electronic solid-state devices or to high-temperature technology requires, however, adequate solid-state methods for obtaining nanostructured materials. In this review, we discuss some of the main current methods of obtaining nanomaterials in solid state, and also we summarize the obtaining of nanomaterials using a new general method in solid state. This new solid-state method to prepare metals and metallic oxides nanostructures start with the preparation of the macromolecular complexes chitosan·Xn and PS-co-4-PVP·MXn as precursors (X = anion accompanying the cationic metal, n = is the subscript, which indicates the number of anions in the formula of the metal salt and PS-co-4-PVP = poly(styrene-co-4-vinylpyridine)). Then, the solid-state pyrolysis under air and at 800 °C affords nanoparticles of M°, M_xO_y depending on the nature of the metal. Metallic nanoparticles are obtained for noble metals such as Au, while the respective metal oxide is obtained for transition, representative, and lanthanide metals. Size and morphology depend on the nature of the polymer as well as on the spacing of the metals within the polymeric chain. Noticeably in the case of TiO₂, anatase or rutile phases can be tuned by the nature of the Ti salts coordinated in the macromolecular polymer. A mechanism for the formation of nanoparticles is outlined on the basis of TG/DSC data. Some applications such as photocatalytic degradation of methylene by different metal oxides obtained by the presented solid-state method are also described. A brief review of the main solid-state methods to prepare nanoparticles is also outlined in the introduction. Some challenges to further development of these materials and methods are finally discussed.

Electronically reconfigurable complex oxide heterostructure freestanding membranes

In recent years, lanthanum aluminate/strontium titanate (LAO/STO) heterointerfaces have been used to create a growing family of nanoelectronic devices based on nanoscale control of LAO/STO metal-to-insulator transition. The properties of these devices are wide-ranging, but they are restricted by nature of the underlying thick STO substrate. Here, single-crystal freestanding membranes based on LAO/STO heterostructures were fabricated, which can be directly integrated with other materials via van der Waals stacking. The key properties of LAO/STO are preserved when LAO/STO membranes are formed. Conductive atomic force microscope lithography is shown to successfully create reversible patterns of nanoscale conducting regions, which survive to millikelvin temperatures. The ability to form reconfigurable conducting nanostructures on LAO/STO membranes opens opportunities to integrate a variety of nanoelectronics with silicon-based architectures and flexible, magnetic, or superconducting materials.

Solution Processing of Topochemically Converted Layered WO3 for Multifunctional Applications

Solution processing of nanomaterials is a promising technique for use in various applications owing to its simplicity and scalability. However, the studies on liquid-phase exfoliation (LPE) of tungsten oxide (WO₃ ) are limited, unlike others, by a lack of commercial availability of bulk WO₃ with layered structures. Herein, a one-step topochemical synthesis approach to obtain bulk layered WO₃ from commercially available layered tungsten disulfide (WS₂ ) by optimizing various parameters like reaction time and temperature is reported. Detailed microscopic and spectroscopic techniques confirmed the conversion process. Further, LPE was carried out on topochemically converted bulk layered WO₃ in 22 different solvents; among the solvents studied, the propan-2-ol/water (1 : 1) co-solvent system appeared to be the best. This indicates that the possible values of surface tension and Hansen solubility parameters for bulk WO₃ could be close to that of the co-solvent system. The obtained WO₃ dispersions in a low-boiling-point solvent enable thin films of various thickness to be fabricated by using spray coating. The obtained thin films were used as active materials in supercapacitors without any conductive additives/binders and exhibited an areal capacitance of 31.7 mF cm^-2 at 5 mV s^-1 . Photo-electrochemical measurements revealed that these thin films can also be used as photoanodes for photo-electrochemical water oxidation.

Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures

Interfacial behavior of quantum materials leads to emergent phenomena such as quantum phase transitions and metastable functional phases. Probes for in situ and real time surface-sensitive characterization are critical for control during epitaxial synthesis of heterostructures. Termination switching in complex oxides has been studied using a variety of probes, often ex situ; however, direct in situ observation of this phenomena during growth is rare. To address this, we establish in situ and real time Auger electron spectroscopy for pulsed laser deposition with reflection high energy electron diffraction, providing structural and compositional surface information during film deposition. Using this capability, we show the direct observation and control of surface termination in heterostructures of SrTiO₃ and SrRuO₃. Density-functional-theory calculations capture the energetics and stability of the observed structures, elucidating their electronic behavior. This work demonstrates an exciting approach to monitor and control the composition of materials at the atomic scale for control over emergent phenomena and potential applications.

Facilitating the Deprotonation of OH to O through Fe4+ -Induced States in Perovskite LaNiO3 Enables a Fast Oxygen Evolution Reaction

Aliovalent doping is widely adopted to tune the electronic structure of transition-metal oxides for design of low-cost, active electrocatalysts. Here, using single-crystalline thin films as model electrocatalysts, the structure-activity relationship of Fe states doping in perovskite LaNiO₃ for oxygen evolution reaction (OER) is studied. Fe⁴⁺ state is found to be crucial for enhancing the OER activity of LaNiO₃ , dramatically increasing the activity by six times, while Fe³⁺ has negligible effect. Spectroscopic studies and DFT calculations indicate Fe⁴⁺ states enhance the degree of Ni/Fe 3d and O 2p hybridization, and meanwhile produce down-shift of the unoccupied density of states towards lower energies. Such electronic features reduce the energy barrier for interfacial electron transfer for water oxidization by 0.2 eV. Further theoretical calculations and H/D isotope experiments reveal the electronic states associated with Fe⁴⁺ -O^2- -Ni³⁺ configuration accelerate the deprotonation of *OH to *O (rate-determining step), and thus facilitate fast OER kinetics.

Structural, optical and electronic properties of Ni1-x Co x O in the complete composition range

Crystallographic and electronic structures of phase pure ternary solid solutions of Ni_1−xCo_xO (x = 0 to 1) have been studied using XRD, EXAFS and XAS measurements. The lattice parameter of the cubic rock-salt (RS) Ni_1−xCo_xO solid solutions increases linearly with increasing Co content and follows Vegard's law, in the complete composition range. A linear increase in the bond lengths (Ni/Co–O, Ni–Ni and Ni–Co) with “x”, closely following the bond lengths determined from virtual crystal approximation (VCA), is observed, which implies that there is only a minimal local distortion of the lattice in the mixed crystal. The optical gap of the ternary solid solution determined from diffuse reflectivity measurements shows neither a linear variation with Co composition nor bowing, as observed in many ternary semiconductors. This trend in the variation of optical gaps is explained by probing the conduction band using XAS at the O K-edge. We have observed that the variation in the onset energy of the conduction band edge with “x” is very similar to the variation in the optical gap with “x”, thus clearly indicating the dominant role played by the conduction band position in determining the optical gap. The variation in the intensities of the pre-edge peak in the XANES spectra measured at Ni and Co K-edges, and the L_1/2 peak in XAS spectra measured at Ni and Co L-edges, is found to depend on the unoccupied O 2p-metal-(Ni/Co) 3d hybridized states and the bond lengths.

The optical gap of Ni_1−xCo_xO solid solutions neither varies linearly with Co composition nor shows any bowing in the complete composition range. The nature of this variation of the gap is governed by the position of conduction band edge.

Unveiling Oxygen Vacancy Superstructures in Reduced Anatase Thin Films

Oxygen vacancies are known to play a crucial role in tuning the physical properties and technological applications of titanium dioxide TiO₂. Over the last decades, defects in substoichiometric TiO₂ have been commonly associated with the formation of Ti_nO_2n-x Magnéli phases, which are extended planar defects originating from crystallographic shear planes. By combining advanced transmission electron microscopy techniques, electron energy-loss spectroscopy and atomistic simulations, we reach new understanding of the oxygen vacancy induced structural modulations in anatase, ruling out the earlier shear-plane model. Structural modulations are instead shown to be due to the formation of oxygen vacancy superstructures that extend periodically inside the films, preserving the crystalline order of anatase. Elucidating the structure of oxygen defects in anatase is a crucial step for improving the functionalities of such material system and to engineer devices with targeted properties.

Tailoring Magnetoelectric Coupling in BiFeO3 /La0.7 Sr0.3 MnO3 Heterostructure through the Interface Engineering

Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO₃ (BFO) and La_0.7 Sr_0.3 MnO₃ (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.

Interface Engineering and Emergent Phenomena in Oxide Heterostructures

Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.

Physics of SrTiO3-based heterostructures and nanostructures: a review

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study

A variety of theoretical and experimental works have reported several potential applications of MoS₂ monolayer based heterostructures (HSs) such as light emitting diodes, photodetectors and field effect transistors etc. In the present work, we have theoretically performed as a model case study, MoS₂ monolayer deposited over insulating SrTiO₃ (001) to study the band alignment at TiO₂ termination. The interfacial characteristics are found to be highly dependent on the interface termination. With an insulating oxide material, a significant band gap (0.85eV) is found in MoS₂/TiO₂ interface heterostructure (HS). A unique electronic band profile with an indirect band gap (0.67eV) is observed in MoS₂ monolayer when confined in a cubic environment of SrTiO₃ (STO). Adsorption analysis showed the chemisorption of MoS₂ on the surface of STO substrate with TiO₂ termination which is justified by the charge density calculations that shows the existence of covalent bonding at the interface. The fabrication of HS of such materials paves the path for developing the unprecedented 2D materials with exciting properties such as semiconducting devices, thermoelectric and optoelectronic applications.

Engineered superlattices with crossover from decoupled to synthetic ferromagnetic behavior

The extent of interfacial charge transfer and the resulting impact on magnetic interactions were investigated as a function of sublayer thickness in La_0.7Sr_0.3MnO₃/La_0.7Sr_0.3CoO₃ ferromagnetic superlattices. Element-specific soft x-ray magnetic spectroscopy reveals that the electronic structure is altered within 5-6 unit cells of the chemical interface, and can lead to a synthetic ferromagnet with strong magnetic coupling between the sublayers. The saturation magnetization and coercivity depends sensitively on the sublayer thickness due to the length scale of this interfacial effect. For larger sublayer thicknesses, the La_0.7Sr_0.3MnO₃ and La_0.7Sr_0.3CoO₃ sublayers are magnetically decoupled, displaying two independent magnetic transitions with little sublayer thickness dependence. These results demonstrate how interfacial phenomena at perovskite oxide interfaces can be used to tailor their functional properties at the atomic scale.

Atomic-Scale Origin of the Quasi-One-Dimensional Metallic Conductivity in Strontium Niobates with Perovskite-Related Layered Structures

The quasi-one-dimensional (1D) metallic conductivity of the perovskite-related Sr_nNb_nO_3n+2 compounds is of continuing fundamental physical interest as well as being important for developing advanced electronic devices. The Sr_nNb_nO_3n+2 compounds can be derived by introducing additional oxygen into the SrNbO₃ perovskite. However, the physical origin for the transition of electrical properties from the three-dimensional (3D) isotropic conductivity in SrNbO₃ to the quasi-1D metallic conductivity in Sr_nNb_nO_3n+2 requires more in-depth clarification. Here we combine advanced transmission electron microscopy with atomistic first-principles calculations to unambiguously determine the atomic and electronic structures of the Sr_nNb_nO_3n+2 compounds and reveal the underlying mechanism for their quasi-1D metallic conductivity. We demonstrate that the local electrical conductivity in the Sr_nNb_nO_3n+2 compounds directly depends on the configuration of the NbO₆ octahedra in local regions. These findings will shed light on the realization of two-dimensional (2D) electrical conductivity from a bulk material, namely by segmenting a 3D conductor into a stack of 2D conducting thin layers.

Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO₃ films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases.

Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface

With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO₃/BaTiO₃/SrRuO₃ (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO₂ or TiO₂-SrO) with oxygen partial pressure (P_O2) during PLD. We found that a uniform SrO-TiO₂ termination sequence at the SRO/BTO interface can be achieved by lowering the P_O2 to 5 mTorr, regardless of the total background gas pressure (P_total), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.

Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions

Understanding the energetics at the interface, including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multifunctionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the heterointerface of wide-band-gap p-type NiO and n-type SrTiO₃ (STO). We show that despite a large lattice mismatch (∼7%) and dissimilar crystal structure, high-quality NiO and Li-doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain-matching epitaxy mechanism. X-ray photoelectron spectroscopy studies indicate that NiO/STO heterojunctions form a type II "staggered" band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb-doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit not only a large rectification ratio of 2 × 10³ but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implications for applications in photocatalysis and photodetectors as the interface provides favorable energetics for facile separation and transport of photogenerated electrons and holes.

Magneto-Optical Study of Defect Induced Sharp Photoluminescence in LaAlO3 and SrTiO3

Strongly correlated electronic systems such as Transition Metal Oxides often possess various mid-gap states originating from intrinsic defects in these materials. In this paper, we investigate an extremely sharp Photoluminescence (PL) transition originating from such defect states in two widely used perovskites, LaAlO3 and SrTiO3. A detailed study of the PL as a function of temperature and magnetic field has been conducted to understand the behavior and origin of the transition involved. The temperature dependence of the PL peak position for SrTiO3 is observed to be opposite to that in LaAlO3. Our results reveal the presence of a spin/orbital character in these transitions which is evident from the splitting of these defect energy levels under a high magnetic field. These PL transitions have the potential for enabling non-contact thermal and field sensors.

Atomic scale imaging of competing polar states in a Ruddlesden-Popper layered oxide

Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden–Popper (RP), A_n+1B_nO_3n+1, thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Sr_n+1Ti_nO_3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases. We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure.

Competing phases in layered complex oxides are believed to be relevant for emergent phenomena, which still await to be witnessed. Here, Stone et al. report direct atomic-scale imaging of a multitude of polar phases in Ruddlesden-Popper oxide thin films, exhibiting diverse phenomena in a single structure.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

An inorganic anionic polymer filter disc: direct crystallization of a layered silicate nanosheet on a glass fiber filter

Cation-exchangeable layered silicate nanosheet fine crystals covered thoroughly a commercially available silica fiber filter paper through hydrothermal reactions with LiF, MgCl₂ and urea.

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO₂/TiO₂ (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.

Intrinsic interfacial phenomena in manganite heterostructures

We review recent advances in our understanding of interfacial phenomena that emerge when dissimilar materials are brought together at atomically sharp and coherent interfaces. In particular, we focus on phenomena that are intrinsic to the interface and review recent work carried out on perovskite manganites interfaces, a class of complex oxides whose rich electronic properties have proven to be a useful playground for the discovery and prediction of novel phenomena.

Crystallographic dependence of photocatalytic activity of WO3thin films prepared by molecular beam epitaxy

The (111) surface of WO₃is found to have the highest photocatalytic reactivity, followed by (110) and (001).

Mesoscopically structured nanocrystalline metal oxide thin films

This review describes the main successful strategies that are used to grow mesostructured nanocrystalline metal oxide and SiO₂ films via deposition of sol-gel derived solutions. In addition to the typical physicochemical forces to be considered during crystallization, mesoporous thin films are also affected by the substrate-film relationship and the mesostructure. The substrate can influence the crystallization temperature and the obtained crystallographic orientation due to the interfacial energies and the lattice mismatch. The mesostructure can influence the crystallite orientation, and affects nucleation and growth behavior due to the wall thickness and pore curvature. Three main methods are presented and discussed: templated mesoporosity followed by thermally induced crystallization, mesostructuration of already crystallized metal oxide nanobuilding units and substrate-directed crystallization with an emphasis on very recent results concerning epitaxially grown piezoelectric structured α-quartz films via crystallization of amorphous structured SiO₂ thin films.

TiO2/ferroelectric heterostructures as dynamic polarization-promoted catalysts for photochemical and electrochemical oxidation of water

Using first-principles density functional theory calculations, we explore the chemical activity of epitaxial heterostructures of TiO2 anatase on strained polar SrTiO3 films focusing on the oxygen evolution reaction (OER), the bottleneck of water splitting. Our results show that the reactivity of the TiO2 surface is tuned by electric dipoles dynamically induced by the adsorbed species during the intermediate steps of the reaction while the initial and final steps remain unaffected. Compared to the OER on unsupported TiO2, the combined effects of the dynamically induced dipoles and epitaxial strain strongly reduce rate-limiting thermodynamic barriers and significantly improve the efficiency of the reaction.

Persistent optically induced magnetism in oxygen-deficient strontium titanate

Strontium titanate (SrTiO3) is a foundational material in the emerging field of complex oxide electronics. Although its bulk electronic and optical properties are rich and have been studied for decades, SrTiO3 has recently become a renewed focus of materials research catalysed in part by the discovery of superconductivity and magnetism at interfaces between SrTiO3 and other non-magnetic oxides. Here we illustrate a new aspect to the phenomenology of magnetism in SrTiO3 by reporting the observation of an optically induced and persistent magnetization in slightly oxygen-deficient bulk SrTiO3-δ crystals using magnetic circular dichroism (MCD) spectroscopy and SQUID magnetometry. This zero-field magnetization appears below ~18 K, persists for hours below 10 K, and is tunable by means of the polarization and wavelength of sub-bandgap (400-500 nm) light. These effects occur only in crystals containing oxygen vacancies, revealing a detailed interplay between magnetism, lattice defects, and light in an archetypal complex oxide material.

Vertical-interface-manipulated conduction behavior in nanocomposite oxide thin films

Vertically aligned nanocomposites with vertical interfaces are a novel concept that show powerful advantages over conventional nanocomposites with lateral interfaces. However, significant obstacles to a systematic understanding of vertical interfaces still remain. Here, heteroepitaxial (BaTiO3)0.5:(Sm2O3)0.5 nanocomposite thin films have been fabricated and the conduction behaviors have been investigated. A spontaneous phase ordering with clear vertical interfaces has been found in the composite films. Because of the structural discontinuity as well as a large strain generated at the interfaces, the vertical interfaces are revealed to become the sinks to attract oxygen vacancies. The accumulated oxygen vacancies contributed to a largely reduced leakage current and a different leakage mechanism in the composite films compared to that of the pure BaTiO3 film. The present work represents a methodology to manipulate functionalities by designing configuration of the interfaces in oxide thin films.

Morphology of monolayer MgO films on Ag(100): switching from corrugated islands to extended flat terraces

The ability to engineer nearly perfect ultrathin oxide layers, up to the limit of monolayer thickness, is a key issue for nanotechnological applications. Here we face the difficult and important case of ultrathin MgO films on Ag(100), for which no extended and well-ordered layers could thus far be produced in the monolayer limit. We demonstrate that their final morphology depends not only on the usual growth parameters (crystal temperature, metal flux, and oxygen partial pressure), but also on aftergrowth treatments controlling so far neglected thermodynamics constraints. We thus succeed in tuning the shape of the oxide films from irregular, nanometer-sized, monolayer-thick islands to slightly larger, perfectly squared, bilayer islands, to extended monolayers limited apparently only by substrate steps.

Control of functional responses via reversible oxygen loss in La₁-xSrxFeO₃-δ films

La0.3 Sr0.7 FeO3-δ films undergo dramatic changes in electronic and optical properties due to reversible oxygen loss induced by low-temperature heating. This mechanism to control the functional properties may serve as a platform for new devices or sensors in which external stimuli are used to dynamically control the composition of complex oxide heterostructures.

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2 -terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V(-1) s(-1) are achieved at this novel oxide interface.

Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO₃ heterostructures grown by atomic layer deposition

The formation of a two-dimensional electron gas (2-DEG) using SrTiO(3) (STO)-based heterostructures provides promising opportunities in oxide electronics. We realized the formation of 2-DEG using several amorphous layers grown by the atomic layer deposition (ALD) technique at 300 °C which is a process compatible with mass production and thereby can provide the realization of potential applications. We found that the amorphous LaAlO(3) (LAO) layer grown by the ALD process can generate 2-DEG (∼1 × 10(13)/cm(2)) with an electron mobility of 4-5 cm(2)/V·s. A much higher electron mobility was observed at lower temperatures. More remarkably, amorphous YAlO(3) (YAO) and Al(2)O(3) layers, which are not polar-perovskite-structured oxides, can create 2-DEG as well. 2-DEG was created by means of the important role of trimethylaluminum, Me(3)Al, as a reducing agent for STO during LAO and YAO ALD as well as the Al(2)O(3) ALD process at 300 °C. The deposited oxide layer also plays an essential role as a catalyst that enables Me(3)Al to reduce the STO. The electrons were localized very near to the STO surface, and the source of carriers was explained based on the oxygen vacancies generated in the STO substrate.

Electric field control of magnetism in multiferroic heterostructures

We review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components. The magnetoelectric coupling in these composite systems is interfacial in origin, and can arise from elastic strain, charge, and exchange bias interactions, with different characteristic responses and functionalities. Moreover, charge transport phenomena in multiferroic heterostructures, where both magnetic and ferroelectric order parameters are used to control charge transport, suggest new possibilities to control the conduction paths of the electron spin, with potential for device applications.

Structural characterization of epitaxial Cr(x)Mo(1-x) alloy thin films

To develop a model system containing regularly spaced misfit dislocations for studies of the radiation resistance of nanoscale defects, epitaxial thin films of Cr, Mo, and Cr(x)Mo(1-x) alloys were deposited on MgO(001) by molecular beam epitaxy. Film compositions were chosen to vary the lattice mismatch with MgO. The film structure was investigated by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and scanning transmission electron microscopy (STEM). Epitaxial films with reasonably high crystalline quality and abrupt interfaces were achieved at a relatively low deposition temperature, as confirmed by STEM. However, it was found by XRD and RBS in the channeling geometry that increasing the Mo content of the CrMo alloy films degraded the crystalline quality, despite the improved lattice match with MgO. XRD rocking curve data indicated that regions of different crystalline order may be present within the films with higher Mo content. This is tentatively ascribed to spinodal decomposition into Cr-rich and Mo-rich regions, as predicted by the Cr(x)Mo(1-x) phase diagram.

Nanostructure of buried interface layers in TiO₂ anatase thin films grown on LaAlO₃ and SrTiO₃ substrates

TiO(2) anatase thin films grown by pulsed laser deposition are investigated by high resolution transmission electron microscopy and high angle annular dark field scanning transmission electron microscopy. The analyses provide evidence of a peculiar growth mode of anatase on LaAlO(3) and SrTiO(3) characterized by the formation of an epitaxial layer at the film/substrate interface, due to cationic diffusion from the substrate into the film region. Pure TiO(2) anatase growth occurs in both specimens above a critical thickness of about 20 nm. The microstructural and chemical characterization of the samples is presented and discussed in the framework of oxide interface engineering.

Metallic and insulating interfaces of amorphous SrTiO₃-based oxide heterostructures

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO(3)-based heterostructures with various insulating overlayers of amorphous LaAlO(3), SrTiO(3), and yttria-stabilized zirconia films. On the other hand, samples of amorphous La(7/8)Sr(1/8)MnO(3) films on SrTiO(3) substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface of SrTiO(3) substrates play an important role.

Magnetoelectric coupling in ordered arrays of multilayered heteroepitaxial BaTiO₃/CoFe₂O₄ nanodots

Fully epitaxial BaTiO(3)/CoFe(2)O(4) ferroelectric/ferromagnetic multilayered nanodot arrays, a new type of magnetoelectric (ME) nanocomposite with both horizontal and vertical orderings, were fabricated via a stencil-derived direct epitaxy technique. By reducing the clamping effect, ferroelectric domain modification and distinct magnetization change proportional to different interfacial area around the BaTiO(3) phase transition temperatures were found, which may pave the way to quantitative introducing of ME coupling at nanoscale and build high density multistate memory devices.

Scaling and disorder analysis of local I-V curves from ferroelectric thin films of lead zirconate titanate

Differential analysis of current-voltage characteristics, obtained on the surface of epitaxial films of ferroelectric lead zirconate titanate (Pb(Zr(0.2)Ti(0.8))O(3)) using scanning probe microscopy, was combined with spatially resolved mapping of variations in local conductance to differentiate between candidate mechanisms of local electronic transport and the origin of disorder. Within the assumed approximations, electron transport was inferred to be determined by two mechanisms depending on the magnitude of applied bias, with the low-bias range dominated by the trap-assisted Fowler-Nordheim tunneling through the interface and the high-bias range limited by the hopping conduction through the bulk. Phenomenological analysis of the I-V curves has further revealed that the transition between the low- and high-bias regimes is manifested both in the strength of variations within the I-V curves sampled across the surface, as well as the spatial distribution of conductance. Spatial variations were concluded to originate primarily from the heterogeneity of the interfacial electronic barrier height with an additional small contribution from random changes in the tip-contact geometry.

Kinetic versus strain formation of self-organized nanoholes in manganite thin films

We report on the formation of self-organized rows of pits in highly epitaxial La(2/3)Sr(1/3)MnO(3) thin films on top of substrates having different structural misfits by rf magnetron sputtering. The best-defined pits form in coherently grown films at a low misfit irrespective of its nature (tensile or compressive stress). It is also found that the pit rows align along the step edges, which indicates in-phase growth instability with the step edges, irrespective of the misfit. However, out-of-phase pit rows are also found when the terrace width increases due to a decrease of the miscut angle. Pit's volume scales inversely with the lattice mismatch suggesting that structural strain alone does not favor the formation of pits. The formation of pits is analyzed within a thermodynamic model.