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Kim GI, Jung J, Min WK, Kim MS, Jung S, Choi DH, Chung J, Kim HJ. Mechanically Durable Organic/High- k Inorganic Hybrid Gate Dielectrics Enabled by Plasma-Polymerization of PTFE for Flexible Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:28085-28096. [PMID: 35680562 DOI: 10.1021/acsami.2c04340] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
To achieve both the synergistic advantages of outstanding flexibility in organic dielectrics and remarkable dielectric/insulating properties in inorganic dielectrics, a plasma-polymerized hafnium oxide (HfOx) hybrid (PPH-hybrid) dielectric is proposed. Using a radio-frequency magnetron cosputtering process, the high-k HfOx dielectric is plasma-polymerized with polytetrafluoroethylene (PTFE), which is a flexible, thermally stable, and hydrophobic fluoropolymer dielectric. The PPH-hybrid dielectric with a high dielectric constant of 14.17 exhibits excellent flexibility, maintaining a leakage current density of ∼10-8 A/cm2 even after repetitive bending stress (up to 10000 bending cycles with a radius of 2 mm), whereas the HfOx dielectric degrades to be leaky. To evaluate its practical applicability to flexible thin-film transistors (TFTs), the PPH-hybrid dielectric is applied to amorphous indium-gallium-zinc oxide (IGZO) TFTs as a gate dielectric. Consequently, the PPH-hybrid dielectric-based IGZO TFTs exhibit stable electrical performance under the same harsh bending cycles: a field-effect mobility of 16.99 cm2/(V s), an on/off current ratio of 1.15 × 108, a subthreshold swing of 0.35 V/dec, and a threshold voltage of 0.96 V (averaged in nine devices). Moreover, the PPH-hybrid dielectric-based IGZO TFTs exhibit a reduced I-V hysteresis and an enhanced positive bias stress stability, with the threshold voltage shift decreasing from 4.99 to 1.74 V, due to fluorine incorporation. These results demonstrate that PTFE improves both the mechanical durability and electrical stability, indicating that the PPH-hybrid dielectric is a promising candidate for high-performance and low-power flexible electronics.
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Affiliation(s)
- Gwan In Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Joohye Jung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
- Display R&D Center, Samsung Display Co., Ltd., 181 Samsung-ro, Tangjeong-myeon, Asan-Si 31454, Republic of Korea
| | - Won Kyung Min
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Min Seong Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Sujin Jung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Dong Hyun Choi
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jusung Chung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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Alamri A, Wu C, Nasreen S, Tran H, Yassin O, Gentile R, Kamal D, Ramprasad R, Cao Y, Sotzing G. High dielectric constant and high breakdown strength polyimide via tin complexation of the polyamide acid precursor. RSC Adv 2022; 12:9095-9100. [PMID: 35424840 PMCID: PMC8985109 DOI: 10.1039/d1ra06302b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Accepted: 01/21/2022] [Indexed: 12/28/2022] Open
Abstract
Polymer dielectrics with ultra-high charge–discharge rates are significant for advanced electrical and electronic systems. Despite the fact that polymers possess high breakdown strength, the low dielectric constant (k) of polymers gives rise to low energy densities. Incorporating metal into polyimides (PI) at the polyamic acid (PAA) precursor stage of the synthetic process is a cheap and versatile way to improve the dielectric constant of the hybrid system while maintaining a high breakdown strength. Here, we explore inclusion of different percentages of Sn as a coordinated complex in a polyimide matrix to achieve metal homogeneity within the dielectric film to boost dielectric constant. Sn–O bonds with high atomic polarizability are intended to enhance the ionic polarization without sacrificing bandgap, a measurable property of the material to assess intrinsic breakdown strength. Enhancements of k from ca. 3.7 to 5.7 were achieved in going from the pure PI film to films containing 10 mol% tin. Polyimide with high dielectric constant and breakdown strength is synthesized via tin complexation of the polyamide acid precursor. Sn–O bonds with high atomic polarizability are intended to enhance the ionic polarization without sacrificing bandgap.![]()
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Affiliation(s)
- Abdullah Alamri
- Institute of Materials Science, University of Connecticut USA
| | - Chao Wu
- Institute of Materials Science, University of Connecticut USA .,Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut USA
| | - Shamima Nasreen
- Institute of Materials Science, University of Connecticut USA
| | - Huan Tran
- School of Materials Science and Engineering, Georgia Institute of Technology USA
| | - Omer Yassin
- Institute of Materials Science, University of Connecticut USA
| | - Ryan Gentile
- Institute of Materials Science, University of Connecticut USA
| | - Deepak Kamal
- School of Materials Science and Engineering, Georgia Institute of Technology USA
| | - Rampi Ramprasad
- School of Materials Science and Engineering, Georgia Institute of Technology USA
| | - Yang Cao
- Institute of Materials Science, University of Connecticut USA .,Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut USA
| | - Gregory Sotzing
- Institute of Materials Science, University of Connecticut USA .,Department of Chemistry, University of Connecticut USA
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3
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Simonenko TL, Bocharova VA, Simonenko NP, Simonenko E, Sevastyanov VG, Kuznetsov NT. Hydrothermal Synthesis of Hierarchical CoMoO4 Nanostructures. RUSS J INORG CHEM+ 2021. [DOI: 10.1134/s0036023621110176] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
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A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics. MICROMACHINES 2021; 12:mi12060655. [PMID: 34199683 PMCID: PMC8227224 DOI: 10.3390/mi12060655] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 05/26/2021] [Accepted: 05/27/2021] [Indexed: 12/30/2022]
Abstract
Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characteristics, including the total thickness and the bending radius, are of paramount importance for physically flexible electronics. However, the limitation regarding semiconductor fabrication challenges the mechanical flexibility of thin-film electronics. Thin-Film Transistors (TFTs) are a key component in thin-film electronics that restrict the flexibility of thin-film systems. Here, we provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics. The study demonstrates the trends of the mechanical properties, including the total thickness and the bending radius, and provides a vision for the future of flexible TFTs.
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Wang B, Biesold GM, Zhang M, Lin Z. Amorphous inorganic semiconductors for the development of solar cell, photoelectrocatalytic and photocatalytic applications. Chem Soc Rev 2021; 50:6914-6949. [PMID: 33904560 DOI: 10.1039/d0cs01134g] [Citation(s) in RCA: 44] [Impact Index Per Article: 14.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Amorphous inorganic semiconductors have attracted growing interest due to their unique electrical and optical properties that arise from their intrinsic disordered structure and thermodynamic metastability. Recently, amorphous inorganic semiconductors have been applied in a variety of new technologies, including solar cells, photoelectrocatalysis, and photocatalysis. It has been reported that amorphous phases can improve both efficiency and stability in these applications. While these phenomena are well established, their mechanisms have long remained unclear. This review first introduces the general background of amorphous inorganic semiconductor properties and synthesis. Then, the recent successes and current challenges of amorphous inorganic semiconductor-based materials for applications in solar cells, photoelectrocatalysis, and photocatalysis are addressed. In particular, we discuss the mechanisms behind the remarkable performances of amorphous inorganic semiconductors in these fields. Finally, we provide insightful perspectives into further developments for applications of amorphous inorganic semiconductors.
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Affiliation(s)
- Bing Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
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6
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Improved Electron Transport in Ambipolar Organic Field-Effect Transistors with PMMA/Polyurethane Blend Dielectrics. Macromol Res 2021. [DOI: 10.1007/s13233-020-8161-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
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Heo JS, Lee KW, Lee JH, Shin SB, Jo JW, Kim YH, Kim MG, Park SK. Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture. MICROMACHINES 2020; 11:mi11121103. [PMID: 33327572 PMCID: PMC7765032 DOI: 10.3390/mi11121103] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Revised: 12/11/2020] [Accepted: 12/11/2020] [Indexed: 12/02/2022]
Abstract
Among various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low-sensing performances still remain as a challenge. In this study, a fiber transistor-type ultra-sensitive pressure sensor (FTPS) with a new architecture that is thread-like suspended dry-spun carbon nanotube (CNT) fiber source (S)/drain (D) electrodes is proposed as the first proof of concept for the detection of very low-pressure stimuli. As a result, the pressure sensor shows an ultra-high sensitivity of ~3050 Pa−1 and a response/recovery time of 258/114 ms in the very low-pressure range of <300 Pa as the fiber transistor was operated in the linear region (VDS = −0.1 V). Also, it was observed that the pressure-sensing characteristics are highly dependent on the contact pressure between the top CNT fiber S/D electrodes and the single-walled carbon nanotubes (SWCNTs) channel layer due to the air-gap made by the suspended S/D electrode fibers on the channel layers of fiber transistors. Furthermore, due to their remarkable sensitivity in the low-pressure range, an acoustic wave that has a very tiny pressure could be detected using the FTPS.
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Affiliation(s)
- Jae Sang Heo
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.S.H.); (Y.H.K.)
| | - Keon Woo Lee
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea; (K.W.L.); (J.H.L.); (S.B.S.)
| | - Jun Ho Lee
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea; (K.W.L.); (J.H.L.); (S.B.S.)
| | - Seung Beom Shin
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea; (K.W.L.); (J.H.L.); (S.B.S.)
| | - Jeong Wan Jo
- Department of Electrical Engineering, University of Cambridge, Cambridge CB2 1TN, UK;
| | - Yong Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.S.H.); (Y.H.K.)
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
| | - Myung Gil Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (J.S.H.); (Y.H.K.)
- Correspondence: (M.G.K.); (S.K.P.); Tel.: +82-10-3200-1812 (M.G.K.); +82-2-820-5347 (S.K.P.)
| | - Sung Kyu Park
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea; (K.W.L.); (J.H.L.); (S.B.S.)
- Correspondence: (M.G.K.); (S.K.P.); Tel.: +82-10-3200-1812 (M.G.K.); +82-2-820-5347 (S.K.P.)
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Yuvaraja S, Nawaz A, Liu Q, Dubal D, Surya SG, Salama KN, Sonar P. Organic field-effect transistor-based flexible sensors. Chem Soc Rev 2020; 49:3423-3460. [DOI: 10.1039/c9cs00811j] [Citation(s) in RCA: 126] [Impact Index Per Article: 31.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.
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Affiliation(s)
- Saravanan Yuvaraja
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Ali Nawaz
- Departamento de Física
- Universidade Federal do Paraná
- Caixa Postal 19044
- Curitiba
- Brazil
| | - Qian Liu
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
| | - Deepak Dubal
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
- Centre for Materials Science
| | - Sandeep G. Surya
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Khaled N. Salama
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Prashant Sonar
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
- Centre for Materials Science
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Tiwari N, Nirmal A, Kulkarni MR, John RA, Mathews N. Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors. Inorg Chem Front 2020. [DOI: 10.1039/d0qi00038h] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.
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Affiliation(s)
- Nidhi Tiwari
- Energy Research Institute @ NTU (ERI@N)
- Nanyang Technological University
- Singapore 637553
| | - Amoolya Nirmal
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
| | | | - Rohit Abraham John
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
| | - Nripan Mathews
- Energy Research Institute @ NTU (ERI@N)
- Nanyang Technological University
- Singapore 637553
- School of Materials Science and Engineering
- Nanyang Technological University
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10
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Research Progress on Flexible Oxide-Based Thin Film Transistors. APPLIED SCIENCES-BASEL 2019. [DOI: 10.3390/app9040773] [Citation(s) in RCA: 40] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.
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11
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Abodunrin T, Boyo A, Usikalu M, Emetere M, Ajayi O, Kotsedi C, Nuru Z, Malik M, Oghonyon G. Influence of n-Mosfet transistor on dye-sensitized solar cell efficiency. Heliyon 2019; 4:e01078. [PMID: 30603711 PMCID: PMC6307039 DOI: 10.1016/j.heliyon.2018.e01078] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2018] [Revised: 10/25/2018] [Accepted: 12/18/2018] [Indexed: 11/30/2022] Open
Abstract
A new strategy for evaluating the efficiency of Dye-sensitized Solar Cell (DSC) employed in this study was to introduce a device stabilizer which also functioned as an external load. This aim was accomplished through computations of efficiency of different DSCs based on n-Mosfet transistor. Transistor Z44 mosfet's impact on the DSC systems was to significantly moderate the effect of two vital components namel; the photoanodes and electrolyte sensitizers. The outcome of the Z44 mosfet incorporation inside the DSC was a synchronization in photovoltaic spectral responses thereby, minimizing the common limitations of DSCs such as dye synergy, redox kinematics, photophysics and roughness factor which is not restrictive to N719 dyes. This study presents the results of indium-doped tin oxide (ITO) conducting glass doped DSCs with different electrolytes enhanced with a transistor mosfet; short-circuit current density (Isc) of 0.104 A cm−2, open-circuit voltage (Voc) of 240.6 mV, efficiency of 0.9 % and a fill factor of 0.12 obtained under 1 atmospheric air mass conditions. The implication of this result is possible reproducibility and modelling of T.daniellii Mosfet DSC based on the comparative analysis of the output performance of T.daniellii DSC on TiO2 and ZnO photoanode. This also gives impetus for further scientific inquiry.
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Affiliation(s)
| | - Adenike Boyo
- Department of Physics, Lagos State University, Nigeria
| | | | | | - Oluseyi Ajayi
- Department of Mechanical Engineering, Covenant University, Nigeria
| | | | - Zebib Nuru
- iThemba Labs, Western Cape, South Africa
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12
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Song W, Fan X, Xu B, Yan F, Cui H, Wei Q, Peng R, Hong L, Huang J, Ge Z. All-Solution-Processed Metal-Oxide-Free Flexible Organic Solar Cells with Over 10% Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1800075. [PMID: 29766587 DOI: 10.1002/adma.201800075] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2018] [Revised: 02/28/2018] [Indexed: 05/19/2023]
Abstract
All-solution-processing at low temperatures is important and desirable for making printed photovoltaic devices and also offers the possibility of a safe and cost-effective fabrication environment for the devices. Herein, an all-solution-processed flexible organic solar cell (OSC) using poly(3,4-ethylenedioxythiophene):poly-(styrenesulfonate) electrodes is reported. The all-solution-processed flexible devices yield the highest power conversion efficiency of 10.12% with high fill factor of over 70%, which is the highest value for metal-oxide-free flexible OSCs reported so far. The enhanced performance is attributed to the newly developed gentle acid treatment at room temperature that enables a high-performance PEDOT:PSS/plastic underlying substrate with a matched work function (≈4.91 eV), and the interface engineering that endows the devices with better interface contacts and improved hole mobility. Furthermore, the flexible devices exhibit an excellent mechanical flexibility, as indicated by a high retention (≈94%) of the initial efficiency after 1000 bending cycles. This work provides a simple route to fabricate high-performance all-solution-processed flexible OSCs, which is important for the development of printing, blading, and roll-to-roll technologies.
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Affiliation(s)
- Wei Song
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xi Fan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Bingang Xu
- Institute of Textiles and Clothing, Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Feng Yan
- Institute of Textiles and Clothing, Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Huiqin Cui
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Qiang Wei
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ruixiang Peng
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ling Hong
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Jiaming Huang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ziyi Ge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
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Heo JS, Eom J, Kim YH, Park SK. Recent Progress of Textile-Based Wearable Electronics: A Comprehensive Review of Materials, Devices, and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1703034. [PMID: 29205836 DOI: 10.1002/smll.201703034] [Citation(s) in RCA: 195] [Impact Index Per Article: 32.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2017] [Revised: 10/11/2017] [Indexed: 05/18/2023]
Abstract
Wearable electronics are emerging as a platform for next-generation, human-friendly, electronic devices. A new class of devices with various functionality and amenability for the human body is essential. These new conceptual devices are likely to be a set of various functional devices such as displays, sensors, batteries, etc., which have quite different working conditions, on or in the human body. In these aspects, electronic textiles seem to be a highly suitable possibility, due to the unique characteristics of textiles such as being light weight and flexible and their inherent warmth and the property to conform. Therefore, e-textiles have evolved into fiber-based electronic apparel or body attachable types in order to foster significant industrialization of the key components with adaptable formats. Although the advances are noteworthy, their electrical performance and device features are still unsatisfactory for consumer level e-textile systems. To solve these issues, innovative structural and material designs, and novel processing technologies have been introduced into e-textile systems. Recently reported and significantly developed functional materials and devices are summarized, including their enhanced optoelectrical and mechanical properties. Furthermore, the remaining challenges are discussed, and effective strategies to facilitate the full realization of e-textile systems are suggested.
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Affiliation(s)
- Jae Sang Heo
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980, Korea
| | - Jimi Eom
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea
| | - Yong-Hoon Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Sung Kyu Park
- School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980, Korea
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Yang X, Hu X, Wang Q, Xiong J, Yang H, Meng X, Tan L, Chen L, Chen Y. Large-Scale Stretchable Semiembedded Copper Nanowire Transparent Conductive Films by an Electrospinning Template. ACS APPLIED MATERIALS & INTERFACES 2017; 9:26468-26475. [PMID: 28731322 DOI: 10.1021/acsami.7b08606] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
With recent emergence of wearable electronic devices, flexible and stretchable transparent electrodes are the core components to realize innovative devices. The copper nanowire (CuNW) network is commonly chosen because of its high conductivity and transparency. However, the junction resistances and low aspect ratios still limit its further stretchable performance. Herein, a large-scale stretchable semiembedded CuNW transparent conductive film (TCF) was fabricated by electrolessly depositing Cu on the electrospun poly(4-vinylpyridine) polymer template semiembedded in polydimethylsiloxane. Compared with traditional CuNWs, which are as-coated on the flexible substrate, the semiembedded CuNW TCFs showed low sheet resistance (15.6 Ω·sq-1 at ∼82% transmittance) as well as outstanding stretchability and mechanical stability. The light-emitting diode connected the stretchable semiembedded CuNW TCFs in the electric circuit still lighted up even after stretching with 25% strain. Moreover, this semiembedded CuNW TCF was successfully applied in polymer solar cells as a stretchable conductive electrode, which yielded a power conversion efficiency of 4.6% with 0.1 cm2 effective area. The large-scale stretchable CuNW TCFs show potential for the development of wearable electronic devices.
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Affiliation(s)
- Xia Yang
- College of Chemistry, Nanchang University , 999 Xuefu Avenue, Nanchang 330031, China
- Jiangxi Provincial Key Laboratory of New Energy Chemistry/Institute of Polymers, Nanchang University , Nanchang 330031, China
| | - Xiaotian Hu
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences (ICCAS) , 2 Zhongguancun Beiyi Street, Beijing 100190, China
| | - Qingxia Wang
- College of Chemistry, Nanchang University , 999 Xuefu Avenue, Nanchang 330031, China
- Jiangxi Provincial Key Laboratory of New Energy Chemistry/Institute of Polymers, Nanchang University , Nanchang 330031, China
| | - Jian Xiong
- Guangxi Key Laboratory of Information Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology , 1 Jinji Road, Guilin 541004, China
| | - Hanjun Yang
- College of Chemistry, Nanchang University , 999 Xuefu Avenue, Nanchang 330031, China
- Jiangxi Provincial Key Laboratory of New Energy Chemistry/Institute of Polymers, Nanchang University , Nanchang 330031, China
| | - Xiangchuan Meng
- College of Chemistry, Nanchang University , 999 Xuefu Avenue, Nanchang 330031, China
- Jiangxi Provincial Key Laboratory of New Energy Chemistry/Institute of Polymers, Nanchang University , Nanchang 330031, China
| | - Licheng Tan
- College of Chemistry, Nanchang University , 999 Xuefu Avenue, Nanchang 330031, China
- Jiangxi Provincial Key Laboratory of New Energy Chemistry/Institute of Polymers, Nanchang University , Nanchang 330031, China
| | - Lie Chen
- College of Chemistry, Nanchang University , 999 Xuefu Avenue, Nanchang 330031, China
- Jiangxi Provincial Key Laboratory of New Energy Chemistry/Institute of Polymers, Nanchang University , Nanchang 330031, China
| | - Yiwang Chen
- College of Chemistry, Nanchang University , 999 Xuefu Avenue, Nanchang 330031, China
- Jiangxi Provincial Key Laboratory of New Energy Chemistry/Institute of Polymers, Nanchang University , Nanchang 330031, China
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De B, Yadav A, Khan S, Kar KK. A Facile Methodology for the Development of a Printable and Flexible All-Solid-State Rechargeable Battery. ACS APPLIED MATERIALS & INTERFACES 2017; 9:19870-19880. [PMID: 28534410 DOI: 10.1021/acsami.7b04112] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Development of printable and flexible energy storage devices is one of the most promising technologies for wearable electronics in textile industry. The present work involves the design of a printable and flexible all-solid-state rechargeable battery for wearable electronics in textile applications. Copper-coated carbon fiber is used to make a poly(ethylene oxide) (PEO)-based polymer nanocomposite for a flexible and conductive current collector layer. Lithium iron phosphate (LiFePO4) and titanium dioxide (TiO2) are utilized to prepare the cathode and anode layers, respectively, with PEO and carbon black composites. The PEO- and Li salt-based solid composite separator layer is utilized for the solid-state and safe electrolyte. Fabrication of all these layers and assembly of them through coating on fabrics are performed in the open atmosphere without using any complex processing, as PEO prevents the degradation of the materials in the open atmosphere. The performance of the battery is evaluated through charge-discharge and open-circuit voltage analyses. The battery shows an open-circuit voltage of ∼2.67 V and discharge time ∼2000 s. It shows similar performance at different repeated bending angles (0° to 180°) and continuous bending along with long cycle life. The application of the battery is also investigated for printable and wearable textile applications. Therefore, this printable, flexible, easily processable, and nontoxic battery with this performance has great potential to be used in portable and wearable textile electronics.
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Affiliation(s)
- Bibekananda De
- Department of Mechanical Engineering and ‡Materials Science Programme, Advanced Nanoengineering Materials laboratory, Indian Institute of Technology Kanpur , Kanpur-208016, India
| | - Amit Yadav
- Department of Mechanical Engineering and ‡Materials Science Programme, Advanced Nanoengineering Materials laboratory, Indian Institute of Technology Kanpur , Kanpur-208016, India
| | - Salman Khan
- Department of Mechanical Engineering and ‡Materials Science Programme, Advanced Nanoengineering Materials laboratory, Indian Institute of Technology Kanpur , Kanpur-208016, India
| | - Kamal K Kar
- Department of Mechanical Engineering and ‡Materials Science Programme, Advanced Nanoengineering Materials laboratory, Indian Institute of Technology Kanpur , Kanpur-208016, India
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16
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Heo JS, Choi S, Jo JW, Kang J, Park HH, Kim YH, Park SK. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors. MATERIALS 2017; 10:ma10060612. [PMID: 28772972 PMCID: PMC5553520 DOI: 10.3390/ma10060612] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/19/2017] [Revised: 05/27/2017] [Accepted: 06/01/2017] [Indexed: 01/15/2023]
Abstract
In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric.
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Affiliation(s)
- Jae Sang Heo
- School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea.
| | - Seungbeom Choi
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Jeong-Wan Jo
- School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea.
| | - Jingu Kang
- School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea.
| | - Ho-Hyun Park
- School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea.
| | - Yong-Hoon Kim
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Sung Kyu Park
- School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea.
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17
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Faber H, Das S, Lin YH, Pliatsikas N, Zhao K, Kehagias T, Dimitrakopulos G, Amassian A, Patsalas PA, Anthopoulos TD. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution. SCIENCE ADVANCES 2017; 3:e1602640. [PMID: 28435867 PMCID: PMC5375640 DOI: 10.1126/sciadv.1602640] [Citation(s) in RCA: 50] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2016] [Accepted: 02/10/2017] [Indexed: 05/20/2023]
Abstract
Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.
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Affiliation(s)
- Hendrik Faber
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K
- Corresponding author. (T.D.A.); (H.F.); (P.A.P.)
| | - Satyajit Das
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K
| | - Yen-Hung Lin
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K
| | - Nikos Pliatsikas
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Kui Zhao
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Thomas Kehagias
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - George Dimitrakopulos
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Aram Amassian
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Panos A. Patsalas
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
- Corresponding author. (T.D.A.); (H.F.); (P.A.P.)
| | - Thomas D. Anthopoulos
- Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
- Corresponding author. (T.D.A.); (H.F.); (P.A.P.)
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18
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Chen JY, Chin LC, Li GA, Tuan HY. Zinc diphosphide nanowires: bismuth nanocrystal-seeded growth and their use as high-capacity lithium ion battery anodes. CrystEngComm 2017. [DOI: 10.1039/c6ce02206e] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
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19
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Xiong W, Liu H, Chen Y, Zheng M, Zhao Y, Kong X, Wang Y, Zhang X, Kong X, Wang P, Jiang L. Highly Conductive, Air-Stable Silver Nanowire@Iongel Composite Films toward Flexible Transparent Electrodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:7167-72. [PMID: 27296551 DOI: 10.1002/adma.201600358] [Citation(s) in RCA: 100] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2016] [Revised: 04/25/2016] [Indexed: 05/24/2023]
Abstract
A new type of flexible transparent electrode is designed, by employing wettability-induced selective electroless-welding of silver nanowire (AgNW) networks, together with a thin conductive iongel as the protective layer. The obtained electrode exhibits high optical transmittance, and excellent air-stability without sacrificing conductivity.
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Affiliation(s)
- Weiwei Xiong
- Laboratory of Bio-inspired Smart Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hongliang Liu
- Laboratory of Bio-inspired Smart Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yongzhen Chen
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Meiling Zheng
- Laboratory of Organic NanoPhotonics and Laboratory of Bio-Inspired Smart Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yuanyuan Zhao
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Laboratory of Organic NanoPhotonics and Laboratory of Bio-Inspired Smart Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiangbin Kong
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ying Wang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiqi Zhang
- Laboratory of Bio-inspired Smart Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiangyu Kong
- Laboratory of Bio-inspired Smart Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Pengfei Wang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Lei Jiang
- Laboratory of Bio-inspired Smart Interface Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
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20
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Li W, Gan L, Guo K, Ke L, Wei Y, Li H, Shen G, Zhai T. Self-supported Zn3P2 nanowire arrays grafted on carbon fabrics as an advanced integrated anode for flexible lithium ion batteries. NANOSCALE 2016; 8:8666-8672. [PMID: 27049639 DOI: 10.1039/c5nr08467a] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We, for the first time, successfully grafted well-aligned binary lithium-reactive zinc phosphide (Zn3P2) nanowire arrays on carbon fabric cloth by a facile CVD method. When applied as a novel self-supported binder-free anode for lithium ion batteries (LIBs), the hierarchical three-dimensional (3D) integrated anode shows excellent electrochemical performances: a highly reversible initial lithium storage capacity of ca. 1200 mA h g(-1) with a coulombic efficiency of up to 88%, a long lifespan of over 200 cycles without obvious decay, and a high rate capability of ca. 400 mA h g(-1) capacity retention at an ultrahigh rate of 15 A g(-1). More interestingly, a flexible LIB full cell is assembled based on the as-synthesized integrated anode and the commercial LiFePO4 cathode, and shows striking lithium storage performances very close to the half cells: a large reversible capacity over 1000 mA h g(-1), a long cycle life of over 200 cycles without obvious decay, and an ultrahigh rate performance of ca. 300 mA h g(-1) even at 20 A g(-1). Considering the excellent lithium storage performances of coin-type half cells as well as flexible full cells, the as-prepared carbon cloth grafted well-aligned Zn3P2 nanowire arrays would be a promising integrated anode for flexible LIB full cell devices.
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Affiliation(s)
- Wenwu Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, P. R. China.
| | - Lin Gan
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, P. R. China.
| | - Kai Guo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, P. R. China.
| | - Linbo Ke
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, P. R. China.
| | - Yaqing Wei
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, P. R. China.
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, P. R. China.
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, P. R. China.
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21
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Heo JS, Jo JW, Kang J, Jeong CY, Jeong HY, Kim SK, Kim K, Kwon HI, Kim J, Kim YH, Kim MG, Park SK. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2016; 8:10403-10412. [PMID: 27035796 DOI: 10.1021/acsami.5b12819] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.
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Affiliation(s)
- Jae Sang Heo
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 156-756, Korea
| | - Jeong-Wan Jo
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 156-756, Korea
| | - Jingu Kang
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 156-756, Korea
| | - Chan-Yong Jeong
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 156-756, Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea
| | - Sung Kyu Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea
| | - Kwanpyo Kim
- Department of Physics, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea
| | - Hyuck-In Kwon
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 156-756, Korea
| | - Jaekyun Kim
- School of Advanced Materials Science and Engineering, Hanbat University , Daejeon 305-719, Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon, Korea
| | - Myung-Gil Kim
- Department of Chemistry, Chung-Ang University , Seoul, Korea
| | - Sung Kyu Park
- School of Electrical and Electronics Engineering, Chung-Ang University , Seoul 156-756, Korea
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22
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Shen X, Qian T, Zhou J, Xu N, Yang T, Yan C. Highly Flexible Full Lithium Batteries with Self-Knitted α-MnO2 Fabric Foam. ACS APPLIED MATERIALS & INTERFACES 2015; 7:25298-25305. [PMID: 26544650 DOI: 10.1021/acsami.5b07145] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Flexible/bendable electronic equipment has attracted great interest recently, while the development is hindered by fabricating flexible/bendable power sources due to the lack of reliable materials that combine both electronically superior conductivity and mechanical flexibility. Here, a novel structure of manganese oxide, like fabric foam, was constructed, which was then cocooned with a carbon shell via chemical vapor deposition. Serving as a binder-free anode, the self-knitted MnO2@Carbon Foam (MCF) exhibits high specific capacitance (850-950 mAh/g), excellent cycling stability (1000 cycles), and good rate capability (60 C, 1 C = 1 A/g). Moreover, a flexible full lithium battery was designed based on an MCF anode and a LiCoO2/Al cathode, and the outstanding performance (energy density of 2451 Wh/kg at a power density of 4085 W/kg) demonstrates its promising potential of the practical applications.
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Affiliation(s)
- Xiaowei Shen
- College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , No. 1 Shizi Street, Suzhou 215006, China
| | - Tao Qian
- College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , No. 1 Shizi Street, Suzhou 215006, China
| | - Jinqiu Zhou
- College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , No. 1 Shizi Street, Suzhou 215006, China
| | - Na Xu
- College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , No. 1 Shizi Street, Suzhou 215006, China
| | - Tingzhou Yang
- College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , No. 1 Shizi Street, Suzhou 215006, China
| | - Chenglin Yan
- College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University , No. 1 Shizi Street, Suzhou 215006, China
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23
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Lin YH, Faber H, Labram JG, Stratakis E, Sygellou L, Kymakis E, Hastas NA, Li R, Zhao K, Amassian A, Treat ND, McLachlan M, Anthopoulos TD. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2015; 2:1500058. [PMID: 27660741 PMCID: PMC5016782 DOI: 10.1002/advs.201500058] [Citation(s) in RCA: 51] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2015] [Revised: 04/11/2015] [Indexed: 05/20/2023]
Abstract
High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180-200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25-45 cm2 V-1 s-1) than single oxide devices (typically 2-5 cm2 V-1 s-1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.
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Affiliation(s)
- Yen-Hung Lin
- Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2AZ UK; Dutch Polymer Institute (DPI) P.O. Box 902 5600 AX Eindhoven The Netherlands
| | - Hendrik Faber
- Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2AZ UK
| | - John G Labram
- Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2AZ UK
| | - Emmanuel Stratakis
- Institute of Electronic Structure and Laser (IESL) Foundation for Research and Technology-Hellas (FORTH) Heraklion 71003 Greece; Materials Science & Technology Department University of Crete Heraklion 71003 Greece
| | - Labrini Sygellou
- Institute of Chemical Engineering and High Temperature Processes (ICEHT) Foundation of Research and Technology Hellas (FORTH) Stadiou Strasse Platani P.O. Box 1414 Patras GR-265 04 Greece
| | - Emmanuel Kymakis
- Center of Materials Technology and Photonics and Electrical Engineering Department Technological Educational Institute (TEI) of Crete Heraklion 71004 Greece
| | - Nikolaos A Hastas
- Physics Department Aristotle University of Thessaloniki Thessaloniki 54124 Greece
| | - Ruipeng Li
- Cornell High Energy Synchrotron Source Wilson Laboratory Cornell University Ithaca NY 14853 USA
| | - Kui Zhao
- Materials Science and Engineering Division of Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955-6900 Saudi Arabia
| | - Aram Amassian
- Materials Science and Engineering Division of Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955-6900 Saudi Arabia
| | - Neil D Treat
- Department of Materials and Centre for Plastic Electronics Imperial College London London Royal School of Mines London SW7 2AZ UK
| | - Martyn McLachlan
- Department of Materials and Centre for Plastic Electronics Imperial College London London Royal School of Mines London SW7 2AZ UK
| | - Thomas D Anthopoulos
- Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2AZ UK
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24
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Choi Y, Park WY, Kang MS, Yi GR, Lee JY, Kim YH, Cho JH. Monolithic metal oxide transistors. ACS NANO 2015; 9:4288-4295. [PMID: 25777338 DOI: 10.1021/acsnano.5b00700] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics.
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Affiliation(s)
| | | | - Moon Sung Kang
- ∥Department of Chemical Engineering, Soongsil University, Seoul 156-743, Republic of Korea
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25
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Afouxenidis D, Mazzocco R, Vourlias G, Livesley PJ, Krier A, Milne WI, Kolosov O, Adamopoulos G. ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air. ACS APPLIED MATERIALS & INTERFACES 2015; 7:7334-7341. [PMID: 25774574 DOI: 10.1021/acsami.5b00561] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The replacement of SiO2 gate dielectrics with metal oxides of higher dielectric constant has led to the investigation of a wide range of materials with superior properties compared with SiO2. Despite their attractive properties, these high-k dielectrics are usually manufactured using costly vacuum-based techniques. To overcome this bottleneck, research has focused on the development of alternative deposition methods based on solution-processable metal oxides. Here we report the application of spray pyrolysis for the deposition and investigation of Al2x-1·TixOy dielectrics as a function of the [Ti(4+)]/[Ti(4+)+2·Al(3+)] ratio and their implementation in thin film transistors (TFTs) employing spray-coated ZnO as the active semiconducting channels. The films are studied by UV-visible absorption spectroscopy, spectroscopic ellipsometry, impedance spectroscopy, atomic force microscopy, X-ray diffraction and field-effect measurements. Analyses reveal amorphous Al2x-1·TixOy dielectrics that exhibit a wide band gap (∼4.5 eV), low roughness (∼0.9 nm), high dielectric constant (k ∼ 13), Schottky pinning factor S of ∼0.44 and very low leakage currents (<5 nA/cm(2)). TFTs employing stoichiometric Al2O3·TiO2 gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with low operating voltages (∼10 V), negligible hysteresis, high on/off current modulation ratio of ∼10(6), subthreshold swing (SS) of ∼550 mV/dec and electron mobility of ∼10 cm(2) V(-1) s(-1).
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Affiliation(s)
| | - Riccardo Mazzocco
- ‡Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
| | - Georgios Vourlias
- §Physics Department, Aristotle University of Thessaloniki, Thessaloniki 54142, Greece
| | - Peter J Livesley
- ‡Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
| | - Anthony Krier
- ‡Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
| | - William I Milne
- ⊥Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
- ∥Display Research Laboratory, Department of Information Display, Kyung Hee University, Seoul 130701, South Korea
| | - Oleg Kolosov
- ‡Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
| | - George Adamopoulos
- †Engineering Department, Lancaster University, Lancaster LA1 4YR, United Kingdom
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Yu X, Zeng L, Zhou N, Guo P, Shi F, Buchholz DB, Ma Q, Yu J, Dravid VP, Chang RPH, Bedzyk M, Marks TJ, Facchetti A. Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:2390-9. [PMID: 25712894 DOI: 10.1002/adma.201405400] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2014] [Revised: 01/24/2015] [Indexed: 05/26/2023]
Abstract
Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP). By adjusting the In2 O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2 O3 :5%PVP-based transistors exhibit mobilities approaching 11 cm(2) V(-1) s(-1) before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.
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Affiliation(s)
- Xinge Yu
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China
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27
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Huang G, Duan L, Dong G, Zhang D, Qiu Y. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode. ACS APPLIED MATERIALS & INTERFACES 2014; 6:20786-20794. [PMID: 25375760 DOI: 10.1021/am5050295] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Solution-processed metal oxide thin-film transistors (TFTs) operating in enhancement mode are promising for the next-generation flat panel displays. In this work, we report high-mobility TFTs based on SnO2 active layer derived from a soluble tin(II) 2-ethylhexanoate precursor. Densely packed polycrystalline SnO2 thin films with moderate oxygen vacancies and only a few hydroxides are obtained via systemically optimizing precursor concentrations and processing conditions. The utilization of a solution-processed high-κ Al2O3 insulating layer could generate a coherent dielectric/semiconductor interface, hence further improving the device performance. TFT devices with an average field-effect mobility of 96.4 cm(2) V(-1) s(-1), a current on/off ratio of 2.2 × 10(6), a threshold voltage of 1.72 V, and a subthreshold swing of 0.26 V dec(-1) have been achieved, and the driving capability is demonstrated by implementing a single SnO2 TFT device to tune the brightness of an organic light-emitting diode. It is worth noting that these TFTs work in enhancement mode at low voltages less than 4 V, which sheds light on their potential application to the next-generation low-cost active matrix flat panel displays.
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Affiliation(s)
- Genmao Huang
- Key Lab of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University , Beijing 100084, P. R. China
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Je SY, Son BG, Kim HG, Park MY, Do LM, Choi R, Jeong JK. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. ACS APPLIED MATERIALS & INTERFACES 2014; 6:18693-18703. [PMID: 25285585 DOI: 10.1021/am504231h] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Although solution-processable high-k inorganic dielectrics have been implemented as a gate insulator for high-performance, low-cost transition metal oxide field-effect transistors (FETs), the high-temperature annealing (>300 °C) required to achieve acceptable insulating properties still limits the facile realization of flexible electronics. This study reports that the addition of a 2-dimetylamino-1-propanol (DMAPO) catalyst to a perhydropolysilazane (PHPS) solution enables a significant reduction of the curing temperature for the resulting SiO2 dielectrics to as low as 180 °C. The hydrolysis and condensation of the as-spun PHPS film under humidity conditions were enhanced greatly by the presence of DMAPO, even at extremely low curing temperatures, which allowed a smooth surface (roughness of 0.31 nm) and acceptable leakage characteristics (1.8 × 10(-6) A/cm(2) at an electric field of 1MV/cm) of the resulting SiO2 dielectric films. Although the resulting indium zinc oxide (IZO) FETs exhibited an apparent high mobility of 261.6 cm(2)/(V s), they suffered from a low on/off current (ION/OFF) ratio and large hysteresis due to the hygroscopic property of silazane-derived SiO2 film. The ION/OFF value and hysteresis instability of IZO FETs was improved by capping the high-k LaZrOx dielectric on a solution-processed SiO2 film via sol-gel processing at a low temperature of 180 °C while maintaining a high mobility of 24.8 cm(2)/(V s). This superior performance of the IZO FETs with a spin-coated LaZrOx/SiO2 bilayer gate insulator can be attributed to the efficient intercalation of the 5s orbital of In(3+) ion in the IZO channel, the good interface matching of IZO/LaZrOx and the carrier blocking ability of PHPS-derived SiO2 dielectric film. Therefore, the solution-processable LaZrOx/SiO2 stack can be a promising candidate as a gate dielectric for low-temperature, high-performance, and low-cost flexible metal oxide FETs.
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Affiliation(s)
- So Yeon Je
- Department of Materials Science and Engineering, Inha University , Incheon 402-751, Korea
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29
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Ha YG, Everaerts K, Hersam MC, Marks TJ. Hybrid gate dielectric materials for unconventional electronic circuitry. Acc Chem Res 2014; 47:1019-28. [PMID: 24428627 DOI: 10.1021/ar4002262] [Citation(s) in RCA: 94] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
Recent advances in semiconductor performance made possible by organic π-electron molecules, carbon-based nanomaterials, and metal oxides have been a central scientific and technological research focus over the past decade in the quest for flexible and transparent electronic products. However, advances in semiconductor materials require corresponding advances in compatible gate dielectric materials, which must exhibit excellent electrical properties such as large capacitance, high breakdown strength, low leakage current density, and mechanical flexibility on arbitrary substrates. Historically, conventional silicon dioxide (SiO2) has dominated electronics as the preferred gate dielectric material in complementary metal oxide semiconductor (CMOS) integrated transistor circuitry. However, it does not satisfy many of the performance requirements for the aforementioned semiconductors due to its relatively low dielectric constant and intransigent processability. High-k inorganics such as hafnium dioxide (HfO2) or zirconium dioxide (ZrO2) offer some increases in performance, but scientists have great difficulty depositing these materials as smooth films at temperatures compatible with flexible plastic substrates. While various organic polymers are accessible via chemical synthesis and readily form films from solution, they typically exhibit low capacitances, and the corresponding transistors operate at unacceptably high voltages. More recently, researchers have combined the favorable properties of high-k metal oxides and π-electron organics to form processable, structurally well-defined, and robust self-assembled multilayer nanodielectrics, which enable high-performance transistors with a wide variety of unconventional semiconductors. In this Account, we review recent advances in organic-inorganic hybrid gate dielectrics, fabricated by multilayer self-assembly, and their remarkable synergy with unconventional semiconductors. We first discuss the principals and functional importance of gate dielectric materials in thin-film transistor (TFT) operation. Next, we describe the design, fabrication, properties, and applications of solution-deposited multilayer organic-inorganic hybrid gate dielectrics, using self-assembly techniques, which provide bonding between the organic and inorganic layers. Finally, we discuss approaches for preparing analogous hybrid multilayers by vapor-phase growth and discuss the properties of these materials.
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Affiliation(s)
- Young-Geun Ha
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Chemistry, Kyonggi University, Suwon, Gyeonggi-Do 443-760, Republic of Korea
| | - Ken Everaerts
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
| | - Mark C. Hersam
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
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Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS NANO 2014; 8:1102-20. [PMID: 24476095 DOI: 10.1021/nn500064s] [Citation(s) in RCA: 978] [Impact Index Per Article: 97.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
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Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
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31
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Zhou N, Buchholz DB, Zhu G, Yu X, Lin H, Facchetti A, Marks TJ, Chang RPH. Ultraflexible polymer solar cells using amorphous zinc-indium-tin oxide transparent electrodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:1098-1104. [PMID: 24123578 DOI: 10.1002/adma.201302303] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2013] [Revised: 08/13/2013] [Indexed: 06/02/2023]
Abstract
Polymer solar cells are fabricated on highly conductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes. For two representative active layer donor polymers, P3HT and PTB7, the power conversion efficiencies (PCEs) are comparable to reference devices using polycrystalline indium tin oxide (ITO) electrodes. Benefitting from the amorphous character of a-ZITO, the new devices are highly flexible and can be repeatedly bent to a radius of 5 mm without significant PCE reduction.
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Affiliation(s)
- Nanjia Zhou
- Department of Materials Science and Engineering, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois, 60208, USA
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32
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Hou X, Liu B, Wang X, Wang Z, Wang Q, Chen D, Shen G. SnO2-microtube-assembled cloth for fully flexible self-powered photodetector nanosystems. NANOSCALE 2013; 5:7831-7837. [PMID: 23887381 DOI: 10.1039/c3nr02300a] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Integrating an energy conversion or storage device with photodetectors into a self-powered system provides a promising route to future devices aimed at reduced size, low weight and high flexibility. We reported here the fabrication of a fully flexible self-powered photodetector nanosystem by integrating a flexible SnO2-cloth-based ultraviolet photodetector with a flexible SnO2-cloth-based lithium-ion battery. The flexible SnO2-cloth-based ultraviolet photodetectors showed fast response to ultraviolet light with excellent flexibility and stability. Using SnO2-on-carbon-cloth as the binder-free anode and commercial LiCoO2/Al foil as the cathode, a flexible full lithium-ion battery was assembled, exhibiting a reversible capacity of 550 mA h g(-1) even after 60 cycles at a current density of 200 mA g(-1) in a potential window of 2-3.8 V. When integrated with and driven by the flexible full battery, the fully flexible self-powered photodetector nanosystem exhibits comparable performance with an analogous externally powered device. Such an integrated nanosystem could serve as a wireless detecting system in large areas, as required in applications such as environmental sensing and biosensing.
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Affiliation(s)
- Xiaojuan Hou
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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33
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Yu X, Zhou N, Smith J, Lin H, Stallings K, Yu J, Marks TJ, Facchetti A. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture. ACS APPLIED MATERIALS & INTERFACES 2013; 5:7983-7988. [PMID: 23876148 DOI: 10.1021/am402065k] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 °C are ~5tmex larger (~2.6 cm(2)/(V s)) than those of single-layer IGO TFTs (~0.5 cm(2)/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (~3.2 cm(2)/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ~0.0 V, and the current on/off ratio is significantly enhanced to ~1 × 10(8) (vs ~1 × 10(4) for In2O3). The microstructure and morphology of the In2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.
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Affiliation(s)
- Xinge Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, PR China
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34
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Hennek JW, Smith J, Yan A, Kim MG, Zhao W, Dravid VP, Facchetti A, Marks TJ. Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors. J Am Chem Soc 2013; 135:10729-41. [PMID: 23819580 DOI: 10.1021/ja403586x] [Citation(s) in RCA: 158] [Impact Index Per Article: 14.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen binding metal ion ("oxygen getter"), X, functions to control O vacancies and enhance lattice formation, hence tune carrier concentration and transport properties. Here we systematically study, in the IXZO series, the role of X = Ga(3+) versus the progression X = Sc(3+) → Y(3+) → La(3+), having similar chemical characteristics but increasing ionic radii. IXZO films are prepared from solution over broad composition ranges for the first time via low-temperature combustion synthesis. The films are characterized via thermal analysis of the precursor solutions, grazing incidence angle X-ray diffraction (GIAXRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging. Excellent thin-film transistor (TFT) performance is achieved for all X, with optimal compositions after 300 °C processing exhibiting electron mobilities of 5.4, 2.6, 2.4, and 1.8 cm(2) V(-1) s(-1) for Ga(3+), Sc(3+), Y(3+), and La(3+), respectively, and with I(on)/I(off) = 10(7)-10(8). Analysis of the IXZO TFT positive bias stress response shows X = Ga(3+) to be superior with mobilities (μ) retaining >95% of the prestress values and threshold voltage shifts (ΔV(T)) of <1.6 V, versus <85% μ retention and ΔV(T) ≈ 20 V for the other trivalent ions. Detailed microstructural analysis indicates that Ga(3+) most effectively promotes oxide lattice formation. We conclude that the metal oxide lattice formation enthalpy (ΔH(L)) and metal ionic radius are the best predictors of IXZO oxygen getter efficacy.
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Affiliation(s)
- Jonathan W Hennek
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
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35
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Nayak PK, Hedhili MN, Cha D, Alshareef HN. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors. ACS APPLIED MATERIALS & INTERFACES 2013; 5:3587-3590. [PMID: 23544956 DOI: 10.1021/am303235z] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility-5.6 cm(2) V(-1) s(-1) with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 10(8)-was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing.
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Affiliation(s)
- Pradipta K Nayak
- Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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36
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Liu X, Liu W, Xiao X, Wang C, Fan Z, Qu Y, Cai B, Guo S, Li J, Jiang C, Duan X, Liao L. High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage. NANOSCALE 2013; 5:2830-2834. [PMID: 23443668 DOI: 10.1039/c3nr34222k] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Here we report the fabrication and characterization of high mobility amorphous ZnMgO/single-walled carbon nanotube composite thin film transistors (TFTs) with a tunable threshold voltage. By controlling the ratio of MgO, ZnO and carbon nanotubes, high performance composite TFTs can be obtained with a field-effect mobility of up to 135 cm(2) V(-1) s(-1), a low threshold voltage of 1 V and a subthreshold swing as small as 200 mV per decade, making it a promising new solution-processed material for high performance functional circuits. A low voltage inverter is demonstrated with a functional frequency exceeding 5 kHz, which is only limited by parasitic capacitance rather than the intrinsic material speed. The overall device performance of the composite TFTs greatly surpasses not only that of the solution-processed TFTs, but also that of the conventional amorphous or polycrystalline silicon TFTs. It therefore has the potential to open up a new avenue to high-performance, solution-processed flexible electronics which could significantly impact the existing applications, and enable a whole new generation of flexible, wearable, or disposable electronics.
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Affiliation(s)
- Xingqiang Liu
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
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37
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Lee S, Lee K, Liu CH, Kulkarni GS, Zhong Z. Flexible and transparent all-graphene circuits for quaternary digital modulations. Nat Commun 2012; 3:1018. [DOI: 10.1038/ncomms2021] [Citation(s) in RCA: 76] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2012] [Accepted: 07/24/2012] [Indexed: 11/09/2022] Open
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38
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Liu B, Zhang J, Wang X, Chen G, Chen D, Zhou C, Shen G. Hierarchical three-dimensional ZnCo₂O₄ nanowire arrays/carbon cloth anodes for a novel class of high-performance flexible lithium-ion batteries. NANO LETTERS 2012; 12:3005-11. [PMID: 22607457 DOI: 10.1021/nl300794f] [Citation(s) in RCA: 436] [Impact Index Per Article: 36.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Flexible electronics is an emerging and promising technology for next generation of optoelectronic devices. Herein, hierarchical three-dimensional ZnCo(2)O(4) nanowire arrays/carbon cloth composites were synthesized as high performance binder-free anodes for Li-ion battery with the features of high reversible capacity of 1300-1400 mAh g(-1) and excellent cycling ability even after 160 cycles with a capacity of 1200 mAh g(-1). Highly flexible full batteries were also fabricated, exhibiting high flexibility, excellent electrical stability, and superior electrochemical performances.
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Affiliation(s)
- Bin Liu
- Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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Chen D, Liu Z, Liang B, Wang X, Shen G. Transparent metal oxide nanowire transistors. NANOSCALE 2012; 4:3001-3012. [PMID: 22495655 DOI: 10.1039/c2nr30445g] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transistors. It begins with the brief introduction to the synthetic methods for high quality metal oxide nanowires, and the typical nanowire transfer and printing techniques with emphasis on the simple contact printing methodology. High performance transparent transistors built on both single nanowires and nanowire thin films are then highlighted. The final section deals with the applications of transparent metal oxide nanowire transistors in the field of transparent displays and concludes with an outlook on the current perspectives and future directions of transparent metal oxide nanowire transistors.
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Affiliation(s)
- Di Chen
- Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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40
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Kim K, Park SY, Lim KH, Shin C, Myoung JM, Kim YS. Low temperature and solution-processed Na-doped zinc oxide transparent thin film transistors with reliable electrical performance using methanol developing and surface engineering. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm33790h] [Citation(s) in RCA: 46] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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41
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Hoel C, Xie S, Benmore C, Malliakas C, Gaillard JF, Poeppelmeier K. Evidence for Tetrahedral Zinc in Amorphous In2-2xZnxSnxO3 (a-ZITO). Z Anorg Allg Chem 2011. [DOI: 10.1002/zaac.201000430] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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42
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Adamopoulos G, Thomas S, Wöbkenberg PH, Bradley DDC, McLachlan MA, Anthopoulos TD. High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO₂ high-k dielectric grown by spray pyrolysis in ambient air. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2011; 23:1894-1898. [PMID: 21432911 DOI: 10.1002/adma.201003935] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2010] [Revised: 11/23/2010] [Indexed: 05/30/2023]
Affiliation(s)
- George Adamopoulos
- Department of Physics and Centre for Plastic Electronics, Imperial College London, Blackett Laboratory, London SW72BW, UK.
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43
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Avis C, Jang J. High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method. ACTA ACUST UNITED AC 2011. [DOI: 10.1039/c1jm12227d] [Citation(s) in RCA: 183] [Impact Index Per Article: 14.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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44
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Jung Y, Jun T, Kim A, Song K, Yeo TH, Moon J. Direct photopatternable organic–inorganic hybrid gate dielectric for solution-processed flexible ZnO thin film transistors. ACTA ACUST UNITED AC 2011. [DOI: 10.1039/c1jm10791g] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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45
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Ha YG, Jeong S, Wu J, Kim MG, Dravid VP, Facchetti A, Marks TJ. Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics. J Am Chem Soc 2010; 132:17426-34. [DOI: 10.1021/ja107079d] [Citation(s) in RCA: 107] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Affiliation(s)
- Young-geun Ha
- Department of Chemistry, Material Science Engineering, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 United States
| | - Sunho Jeong
- Department of Chemistry, Material Science Engineering, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 United States
| | - Jinsong Wu
- Department of Chemistry, Material Science Engineering, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 United States
| | - Myung-Gil Kim
- Department of Chemistry, Material Science Engineering, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 United States
| | - Vinayak P. Dravid
- Department of Chemistry, Material Science Engineering, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 United States
| | - Antonio Facchetti
- Department of Chemistry, Material Science Engineering, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 United States
| | - Tobin J. Marks
- Department of Chemistry, Material Science Engineering, and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208 United States
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Jin J, Ko JH, Yang S, Bae BS. Rollable transparent glass-fabric reinforced composite substrate for flexible devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2010; 22:4510-4515. [PMID: 20830715 DOI: 10.1002/adma.201002198] [Citation(s) in RCA: 30] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Affiliation(s)
- JungHo Jin
- Laboratory of Optical Materials & Coating, Dept. Materials Science and Engineering, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea
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Wang Y, Lu L, Wu F. Indium Tin Oxide@Carbon Core-Shell Nanowire and Jagged Indium Tin Oxide Nanowire. NANOSCALE RESEARCH LETTERS 2010; 5:1682-1685. [PMID: 21076705 PMCID: PMC2956033 DOI: 10.1007/s11671-010-9695-x] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/06/2010] [Accepted: 07/01/2010] [Indexed: 05/30/2023]
Abstract
This paper reports two new indium tin oxide (ITO)-based nanostructures, namely ITO@carbon core-shell nanowire and jagged ITO nanowire. The ITO@carbon core-shell nanowires (~50 nm in diameter, 1-5 μm in length,) were prepared by a chemical vapor deposition process from commercial ITO nanoparticles. A carbon overlayer (~5-10 in thickness) was observed around ITO nanowire core, which was in situ formed by the catalytic decomposition of acetylene gas. This carbon overlayer could be easily removed after calcination in air at an elevated temperature of 700°C, thus forming jagged ITO nanowires (~40-45 nm in diameter). The growth mechanisms of ITO@carbon core-shell nanowire and jagged ITO nanowire were also suggested.
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Affiliation(s)
- Yong Wang
- Department of Chemical Engineering, School of Environmental and Chemical Engineering, Shanghai University, Shangda Road 99, 200444, Shanghai, People’s Republic of China
| | - Liqiang Lu
- Department of Chemical Engineering, School of Environmental and Chemical Engineering, Shanghai University, Shangda Road 99, 200444, Shanghai, People’s Republic of China
| | - Fengdan Wu
- Department of Chemical Engineering, School of Environmental and Chemical Engineering, Shanghai University, Shangda Road 99, 200444, Shanghai, People’s Republic of China
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