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Guo X, Liu X, Zafar Z, Cheng G, Li Y, Nan H, Lin L, Zou J. Effects of oxygen vacancies and interfacial strain on the metal-insulator transition of VO 2 nanobeams. Phys Chem Chem Phys 2024; 26:10737-10745. [PMID: 38516809 DOI: 10.1039/d3cp06040c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (TMIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to ∼453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above ∼348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.
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Affiliation(s)
- Xitao Guo
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Xin Liu
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Zainab Zafar
- Experimental Physics Division, National Centre for Physics, Islamabad 44000, Pakistan
| | - Guiquan Cheng
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Yunhai Li
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China.
| | - Lianghua Lin
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Jijun Zou
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
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2
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Darwish M, Zhabura Y, Pohl L. Recent Advances of VO 2 in Sensors and Actuators. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:582. [PMID: 38607118 PMCID: PMC11154574 DOI: 10.3390/nano14070582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Revised: 03/24/2024] [Accepted: 03/25/2024] [Indexed: 04/13/2024]
Abstract
Vanadium dioxide (VO2) stands out for its versatility in numerous applications, thanks to its unique reversible insulator-to-metal phase transition. This transition can be initiated by various stimuli, leading to significant alterations in the material's characteristics, including its resistivity and optical properties. As the interest in the material is growing year by year, the purpose of this review is to explore the trends and current state of progress on some of the applications proposed for VO2 in the field of sensors and actuators using literature review methods. Some key applications identified are resistive sensors such as strain, temperature, light, gas concentration, and thermal fluid flow sensors for microfluidics and mechanical microactuators. Several critical challenges have been recognized in the field, including the expanded investigation of VO2-based applications across multiple domains, exploring various methods to enhance device performance such as modifying the phase transition temperature, advancing the fabrication techniques for VO2 structures, and developing innovative modelling approaches. Current research in the field shows a variety of different sensors, actuators, and material combinations, leading to different sensor and actuator performance input ranges and output sensitivities.
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Affiliation(s)
- Mahmoud Darwish
- Department of Electron Devices, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, 1111 Budapest, Hungary
| | - Yana Zhabura
- Department of Electrical Engineering and Automation, School of Electrical Engineering, Aalto University, 02150 Espoo, Finland;
| | - László Pohl
- Department of Electron Devices, Faculty of Electrical Engineering and Informatics, Budapest University of Technology and Economics, 1111 Budapest, Hungary
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3
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Li Z, Zhang Z, Zhou X. Chemical Modulation of Metal-Insulator Transition toward Multifunctional Applications in Vanadium Dioxide Nanostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2305234. [PMID: 37394705 DOI: 10.1002/smll.202305234] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Indexed: 07/04/2023]
Abstract
The metal-insulator transition (MIT) of vanadium dioxide (VO2 ) has been of great interest in materials science for both fundamental understanding of strongly correlated physics and a wide range of applications in optics, thermotics, spintronics, and electronics. Due to the merits of chemical interaction with accessibility, versatility, and tunability, chemical modification provides a new perspective to regulate the MIT of VO2 , endowing VO2 with exciting properties and improved functionalities. In the past few years, plenty of efforts have been devoted to exploring innovative chemical approaches for the synthesis and MIT modulation of VO2 nanostructures, greatly contributing to the understanding of electronic correlations and development of MIT-driven functionalities. Here, this comprehensive review summarizes the recent achievements in chemical synthesis of VO2 and its MIT modulation involving hydrogen incorporation, composition engineering, surface modification, and electrochemical gating. The newly appearing phenomena, mechanism of electronic correlation, and structural instability are discussed. Furthermore, progresses related to MIT-driven applications are presented, such as the smart window, optoelectronic detector, thermal microactuator, thermal radiation coating, spintronic device, memristive, and neuromorphic device. Finally, the challenges and prospects in future research of chemical modulation and functional applications of VO2 MIT are also provided.
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Affiliation(s)
- Zejun Li
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing, 211189, China
- Purple Mountain Laboratories, Nanjing, 211111, China
| | - Zhi Zhang
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing, 211189, China
| | - Xiaoli Zhou
- School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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4
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Schofield P, Bradicich A, Gurrola RM, Zhang Y, Brown TD, Pharr M, Shamberger PJ, Banerjee S. Harnessing the Metal-Insulator Transition of VO 2 in Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205294. [PMID: 36036767 DOI: 10.1002/adma.202205294] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2022] [Revised: 08/02/2022] [Indexed: 06/15/2023]
Abstract
Future-generation neuromorphic computing seeks to overcome the limitations of von Neumann architectures by colocating logic and memory functions, thereby emulating the function of neurons and synapses in the human brain. Despite remarkable demonstrations of high-fidelity neuronal emulation, the predictive design of neuromorphic circuits starting from knowledge of material transformations remains challenging. VO2 is an attractive candidate since it manifests a near-room-temperature, discontinuous, and hysteretic metal-insulator transition. The transition provides a nonlinear dynamical response to input signals, as needed to construct neuronal circuit elements. Strategies for tuning the transformation characteristics of VO2 based on modification of material properties, interfacial structure, and field couplings, are discussed. Dynamical modulation of transformation characteristics through in situ processing is discussed as a means of imbuing synaptic function. Mechanistic understanding of site-selective modification; external, epitaxial, and chemical strain; defect dynamics; and interfacial field coupling in modifying local atomistic structure, the implications therein for electronic structure, and ultimately, the tuning of transformation characteristics, is emphasized. Opportunities are highlighted for inverse design and for using design principles related to thermodynamics and kinetics of electronic transitions learned from VO2 to inform the design of new Mott materials, as well as to go beyond energy-efficient computation to manifest intelligence.
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Affiliation(s)
- Parker Schofield
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Adelaide Bradicich
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Rebeca M Gurrola
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Yuwei Zhang
- Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | | | - Matt Pharr
- Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Patrick J Shamberger
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Sarbajit Banerjee
- Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843, USA
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Chang X, Li J, Mu J, Ma CH, Huang W, Zhu HF, Liu Q, Du LH, Zhong SC, Zhai ZH, Das S, Huang YL, Zhu GB, Zhu LG, Shi Q. Impact of the uniaxial strain on terahertz modulation characteristics in flexible epitaxial VO 2 film across the phase transition. OPTICS EXPRESS 2023; 31:13243-13254. [PMID: 37157465 DOI: 10.1364/oe.488947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Exploring flexible electronics is on the verge of innovative breakthroughs in terahertz (THz) communication technology. Vanadium dioxide (VO2) with insulator-metal transition (IMT) has excellent application potential in various THz smart devices, but the associated THz modulation properties in the flexible state have rarely been reported. Herein, we deposited an epitaxial VO2 film on a flexible mica substrate via pulsed-laser deposition and investigated its THz modulation properties under different uniaxial strains across the phase transition. It was observed that the THz modulation depth increases under compressive strain and decreases under tensile strain. Moreover, the phase-transition threshold depends on the uniaxial strain. Particularly, the rate of the phase transition temperature depends on the uniaxial strain and reaches approximately 6 °C/% in the temperature-induced phase transition. The optical trigger threshold in laser-induced phase transition decreased by 38.9% under compressive strain but increased by 36.7% under tensile strain, compared to the initial state without uniaxial strain. These findings demonstrate the uniaxial strain-induced low-power triggered THz modulation and provide new insights for applying phase transition oxide films in THz flexible electronics.
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Hu P, Hu P, Vu TD, Li M, Wang S, Ke Y, Zeng X, Mai L, Long Y. Vanadium Oxide: Phase Diagrams, Structures, Synthesis, and Applications. Chem Rev 2023; 123:4353-4415. [PMID: 36972332 PMCID: PMC10141335 DOI: 10.1021/acs.chemrev.2c00546] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
Abstract
Vanadium oxides with multioxidation states and various crystalline structures offer unique electrical, optical, optoelectronic and magnetic properties, which could be manipulated for various applications. For the past 30 years, significant efforts have been made to study the fundamental science and explore the potential for vanadium oxide materials in ion batteries, water splitting, smart windows, supercapacitors, sensors, and so on. This review focuses on the most recent progress in synthesis methods and applications of some thermodynamically stable and metastable vanadium oxides, including but not limited to V2O3, V3O5, VO2, V3O7, V2O5, V2O2, V6O13, and V4O9. We begin with a tutorial on the phase diagram of the V-O system. The second part is a detailed review covering the crystal structure, the synthesis protocols, and the applications of each vanadium oxide, especially in batteries, catalysts, smart windows, and supercapacitors. We conclude with a brief perspective on how material and device improvements can address current deficiencies. This comprehensive review could accelerate the development of novel vanadium oxide structures in related applications.
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7
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Ma H, Kim D, Park SI, Choi BK, Park G, Baek H, Lee H, Kim H, Yu J, Lee WC, Park J, Yang J. Direct Observation of Off-Stoichiometry-Induced Phase Transformation of 2D CdSe Quantum Nanosheets. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205690. [PMID: 36638252 PMCID: PMC9982559 DOI: 10.1002/advs.202205690] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 11/22/2022] [Indexed: 06/17/2023]
Abstract
Crystal structures determine material properties, suggesting that crystal phase transformations have the potential for application in a variety of systems and devices. Phase transitions are more likely to occur in smaller crystals; however, in quantum-sized semiconductor nanocrystals, the microscopic mechanisms by which phase transitions occur are not well understood. Herein, the phase transformation of 2D CdSe quantum nanosheets caused by off-stoichiometry is revealed, and the progress of the transformation is directly observed by in situ transmission electron microscopy. The initial hexagonal wurtzite-CdSe nanosheets with atomically uniform thickness are transformed into cubic zinc blende-CdSe nanosheets. A combined experimental and theoretical study reveals that electron-beam irradiation can change the stoichiometry of the nanosheets, thereby triggering phase transformation. The loss of Se atoms induces the reconstruction of surface atoms, driving the transformation from wurtzite-CdSe(11 2 ¯ $\bar{2}$ 0) to zinc blende-CdSe(001) 2D nanocrystals. Furthermore, during the phase transformation, unconventional dynamic phenomena occur, including domain separation. This study contributes to the fundamental understanding of the phase transformations in 2D quantum-sized semiconductor nanocrystals.
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Affiliation(s)
- Hyeonjong Ma
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Dongjun Kim
- Center for Nanoparticle ResearchInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
| | - Soo Ik Park
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Back Kyu Choi
- Center for Nanoparticle ResearchInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
| | - Gisang Park
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Hayeon Baek
- Center for Nanoparticle ResearchInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
| | - Hyocheol Lee
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Hyeongseoung Kim
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Jong‐Sung Yu
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
- Energy Science and Engineering Research CenterDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Won Chul Lee
- Department of Mechanical EngineeringBK21 FOUR ERICA‐ACE CenterHanyang UniversityAnsanGyeonggi15588Republic of Korea
| | - Jungwon Park
- Center for Nanoparticle ResearchInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
- Institute of Engineering ResearchCollege of EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Advanced Institute of Convergence TechnologySeoul National UniversitySuwon‐siGyeonggi‐do16229Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
- Energy Science and Engineering Research CenterDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
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8
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Shi R, Wu Y, Xin Z, Guo J, Li Z, Zhao B, Peng R, Li C, Wang E, Wang B, Zhang X, Cheng C, Liu K. Liquid Precursor-Guided Phase Engineering of Single-Crystal VO 2 Beams. Angew Chem Int Ed Engl 2023; 62:e202301421. [PMID: 36808416 DOI: 10.1002/anie.202301421] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2023] [Revised: 02/20/2023] [Accepted: 02/20/2023] [Indexed: 02/23/2023]
Abstract
The study of VO2 flourishes due to its rich competing phases induced by slight stoichiometry variations. However, the vague mechanism of stoichiometry manipulation makes the precise phase engineering of VO2 still challenging. Here, stoichiometry manipulation of single-crystal VO2 beams in liquid-assisted growth is systematically studied. Contrary to previous experience, oxygen-rich VO2 phases are abnormally synthesized under a reduced oxygen concentration, revealing the important function of liquid V2 O5 precursor: It submerges VO2 crystals and stabilizes their stoichiometric phase (M1) by isolating them from the reactive atmosphere, while the uncovered crystals are oxidized by the growth atmosphere. By varying the thickness of liquid V2 O5 precursor and thus the exposure time of VO2 to the atmosphere, various VO2 phases (M1, T, and M2) can be selectively stabilized. Furthermore, this liquid precursor-guided growth can be used to spatially manages multiphase structures in single VO2 beams, enriching their deformation modes for actuation applications.
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Affiliation(s)
- Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zonglin Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Bochen Zhao
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Chenyu Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Xiaolong Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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Zhuo S, Liu Z, Zhou F, Qin Y, Luo X, Ji C, Yang G, Yang R, Xie Y. THz broadband and dual-channel perfect absorbers based on patterned graphene and vanadium dioxide metamaterials. OPTICS EXPRESS 2022; 30:47647-47658. [PMID: 36558688 DOI: 10.1364/oe.476858] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2022] [Accepted: 11/15/2022] [Indexed: 06/17/2023]
Abstract
This paper proposes a novel and perfect absorber based on patterned graphene and vanadium dioxide hybrid metamaterial, which can not only achieve wide-band perfect absorption and dual-channel absorption in the terahertz band, but also realize their conversion by adjusting the temperature to control the metallic or insulating phase of VO2. Firstly, the absorption spectrum of the proposed structure is analyzed without graphene, where the absorption can reach as high as 100% at one frequency point (f = 5.956 THz) when VO2 is in the metal phase. What merits attention is that the addition of graphene above the structure enhances the almost 100% absorption from one frequency point (f = 5.956 THz) to a wide frequency band, in which the broadband width records 1.683 THz. Secondly, when VO2 is the insulating phase, the absorption of the metamaterial structure with graphene outperforms better, and two high absorption peaks are formed, logging 100% and 90.7% at f3 = 5.545 THz and f4 = 7.684 THz, respectively. Lastly, the adjustment of the Fermi level of graphene from 0.8 eV to 1.1 eV incurs an obvious blueshift of the absorption spectra, where an asynchronous optical switch can be achieved at fK1 = 5.782 THz and fK2 = 6.898 THz. Besides, the absorber exhibits polarization sensitivity at f3 = 5.545 THz, and polarization insensitivity at f4 = 7.684 THz with the shift in the polarization angle of incident light from 0° to 90°. Accordingly, this paper gives insights into the new method that increases the high absorption width, as well as the great potential in the multifunctional modulator.
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Arata Y, Nishinaka H, Takeda M, Kanegae K, Yoshimoto M. Strain-Induced Modulation of Resistive Switching Temperature in Epitaxial VO 2 Thin Films on Flexible Synthetic Mica. ACS OMEGA 2022; 7:41768-41774. [PMID: 36406563 PMCID: PMC9670360 DOI: 10.1021/acsomega.2c06062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 10/21/2022] [Indexed: 06/16/2023]
Abstract
The resistive switching temperature associated with the metal-insulator transition (MIT) of epitaxial VO2 thin films grown on flexible synthetic mica was modulated by bending stress. The resistive switching temperature of polycrystalline VO2 and V2O5 thin films, initially grown on synthetic mica without a buffer layer, was observed not to shift with bending stress. By inserting a SnO2 buffer layer, epitaxial growth of the VO2 (010) thin film was achieved, and the MIT temperature was found to vary with the bending stress. Thus, it was revealed that the bending response of the VO2 thin film depends on the presence or absence of the SnO2 buffer layer. The bending stress applied a maximum in-plane tensile strain of 0.077%, resulting in a high-temperature shift of 2.3 °C during heating and 1.8 °C during cooling. After 104 bending cycles at a radius of curvature R = 10 mm, it was demonstrated that the epitaxial VO2 thin film exhibits resistive switching temperature associated with MIT.
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Affiliation(s)
- Yuta Arata
- Department
of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto606-8585, Japan
| | - Hiroyuki Nishinaka
- Faculty
of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto606-8585, Japan
| | - Minoru Takeda
- Faculty
of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto606-8585, Japan
| | - Kazutaka Kanegae
- Faculty
of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto606-8585, Japan
| | - Masahiro Yoshimoto
- Faculty
of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto606-8585, Japan
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11
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Mutilin SV, Yakovkina LV, Seleznev VA, Prinz VY. Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO 2 Nanowire Arrays on Nanoimprinted Si Substrates. MATERIALS (BASEL, SWITZERLAND) 2022; 15:ma15217863. [PMID: 36363453 PMCID: PMC9656171 DOI: 10.3390/ma15217863] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Revised: 10/30/2022] [Accepted: 11/06/2022] [Indexed: 05/27/2023]
Abstract
In the present article, the position-controlled and catalytic-free synthesis of vanadium dioxide (VO2) nanowires (NWs) grown by the chemical vapor deposition (CVD) on nanoimprinted silicon substrates in the form of nanopillar arrays was analyzed. The NW growth on silicon nanopillars with different cross-sectional areas was studied, and it has been shown that the NWs' height decreases with an increase in their cross-sectional area. The X-ray diffraction technique, scanning electron microscopy, and X-ray photoelectron spectroscopy showed the high quality of the grown VO2 NWs. A qualitative description of the growth rate of vertical NWs based on the material balance equation is given. The dependence of the growth rate of vertical and horizontal NWs on the precursor concentration in the gas phase and on the growth time was investigated. It was found that the height of vertical VO2 NWs along the [100] direction exhibited a linear dependence on time and increased with an increase in the precursor concentration. For horizontal VO2 NWs, the height along the direction [011] varied little with the growth time and precursor concentration. These results suggest that the high-aspect ratio vertical VO2 NWs formed due to different growth modes of their crystal faces forming the top of the growing VO2 crystals and their lateral crystal faces related to the difference between the free energies of these crystal faces and implemented experimental conditions. The results obtained permit a better insight into the growth of high-aspect ratio VO2 NWs and into the formation of large VO2 NW arrays with a controlled composition and properties.
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Affiliation(s)
- Sergey V. Mutilin
- Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., 630090 Novosibirsk, Russia
| | - Lyubov V. Yakovkina
- Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Lavrentiev Aven., 630090 Novosibirsk, Russia
| | - Vladimir A. Seleznev
- Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., 630090 Novosibirsk, Russia
| | - Victor Ya. Prinz
- Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., 630090 Novosibirsk, Russia
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12
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Lee YJ, Hong K, Na K, Yang J, Lee TH, Kim B, Bark CW, Kim JY, Park SH, Lee S, Jang HW. Nonvolatile Control of Metal-Insulator Transition in VO 2 by Ferroelectric Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203097. [PMID: 35713476 DOI: 10.1002/adma.202203097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Revised: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Controlling phase transitions in correlated materials yields emergent functional properties, providing new aspects to future electronics and a fundamental understanding of condensed matter systems. With vanadium dioxide (VO2 ), a representative correlated material, an approach to control a metal-insulator transition (MIT) behavior is developed by employing a heteroepitaxial structure with a ferroelectric BiFeO3 (BFO) layer to modulate the interaction of correlated electrons. Owing to the defect-alleviated interfaces, the enhanced coupling between the correlated electrons and ferroelectric polarization is successfully demonstrated by showing a nonvolatile control of MIT of VO2 at room temperature. The ferroelectrically-tunable MIT can be realized through the Mott transistor (VO2 /BFO/SrRuO3 ) with a remanent polarization of 80 µC cm-2 , leading to a nonvolatile MIT behavior through the reversible electrical conductance with a large on/off ratio (≈102 ), long retention time (≈104 s), and high endurance (≈103 cycles). Furthermore, the structural phase transition of VO2 is corroborated by ferroelectric polarization through in situ Raman mapping analysis. This study provides novel design principles for heteroepitaxial correlated materials and innovative insight to modulate multifunctional properties.
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Affiliation(s)
- Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Material Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kyeongho Na
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Jiwoong Yang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byungsoo Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, South Korea
| | - Jae Young Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sung Hyuk Park
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sanghan Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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13
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Zheng F, Guo D, Huang L, Wong LW, Chen X, Wang C, Cai Y, Wang N, Lee C, Lau SP, Ly TH, Ji W, Zhao J. Sub-Nanometer Electron Beam Phase Patterning in 2D Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200702. [PMID: 35723437 PMCID: PMC9376820 DOI: 10.1002/advs.202200702] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Revised: 05/18/2022] [Indexed: 05/17/2023]
Abstract
Phase patterning in polymorphic two-dimensional (2D) materials offers diverse properties that extend beyond what their pristine structures can achieve. If precisely controllable, phase transitions can bring exciting new applications for nanometer-scale devices and ultra-large-scale integrations. Here, the focused electron beam is capable of triggering the phase transition from the semiconducting T'' phase to metallic T' and T phases in 2D rhenium disulfide (ReS2 ) and rhenium diselenide (ReSe2 ) monolayers, rendering ultra-precise phase patterning technique even in sub-nanometer scale is found. Based on knock-on effects and strain analysis, the phase transition mechanism on the created atomic vacancies and the introduced substantial in-plane compressive strain in 2D layers are clarified. This in situ high-resolution scanning transmission electron microscopy (STEM) and in situ electrical characterizations agree well with the density functional theory (DFT) calculation results for the atomic structures, electronic properties, and phase transition mechanisms. Grain boundary engineering and electrical contact engineering in 2D are thus developed based on this patterning technique. The patterning method exhibits great potential in ultra-precise electron beam lithography as a scalable top-down manufacturing method for future atomic-scale devices.
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Affiliation(s)
- Fangyuan Zheng
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityKowloon999077Hong Kong
- China & Polytechnic University of Hong Kong Shenzhen Research InstituteShenzhen518000China
| | - Deping Guo
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Lingli Huang
- Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF)City University of Hong KongKowloon999077Hong Kong
- China & City University of Hong Kong Shenzhen Research InstituteShenzhen518000China
| | - Lok Wing Wong
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityKowloon999077Hong Kong
- China & Polytechnic University of Hong Kong Shenzhen Research InstituteShenzhen518000China
| | - Xin Chen
- Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF)City University of Hong KongKowloon999077Hong Kong
- China & City University of Hong Kong Shenzhen Research InstituteShenzhen518000China
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Yuan Cai
- Department of PhysicsHong Kong University of Science and TechnologyClear water bayHong Kong999077China
| | - Ning Wang
- Department of PhysicsHong Kong University of Science and TechnologyClear water bayHong Kong999077China
| | - Chun‐Sing Lee
- Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF)City University of Hong KongKowloon999077Hong Kong
- China & City University of Hong Kong Shenzhen Research InstituteShenzhen518000China
| | - Shu Ping Lau
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityKowloon999077Hong Kong
- China & Polytechnic University of Hong Kong Shenzhen Research InstituteShenzhen518000China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super‐Diamond & Advanced Films (COSDAF)City University of Hong KongKowloon999077Hong Kong
- China & City University of Hong Kong Shenzhen Research InstituteShenzhen518000China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Jiong Zhao
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityKowloon999077Hong Kong
- China & Polytechnic University of Hong Kong Shenzhen Research InstituteShenzhen518000China
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14
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Koch D, Manzhos S, Chaker M. The Role of Local DFT+ U Minima in the First-Principles Modeling of the Metal-Insulator Transition in Vanadium Dioxide. J Phys Chem A 2022; 126:3604-3611. [PMID: 35639019 DOI: 10.1021/acs.jpca.2c03097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
The DFT+U method is frequently employed to improve the first-principles description of strongly correlated materials. However, it is prone to deliver metastable electronic minima. While these local minima of the DFT+U method are often considered to be computational artifacts, their physical meaning and relationship to true excited states remains unclear. In this work, the possibility of theoretically modeling transformations in the solid state that require thermal or optical excitations of electrons is explored, taking into account the metastable states of the computationally undemanding DFT+U formalism. For this purpose, we choose to examine the example of the VO2 metal-insulator transition. Metastable states that are located on different electronic potential energy surfaces are found to correspond to experimentally observed VO2 phases. The identified metastable electronic states can be used to model the collapse of the VO2 band gap at elevated temperatures and upon photoexcitation as well as other monoclinic-monoclinic phase transformations. The results suggest that local DFT+U minima can indeed carry physical meaning, while they remain under-reported in theoretical literature on transition metal oxides like VO2.
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Affiliation(s)
- Daniel Koch
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, 1650 boulevard Lionel Boulet, Varennes, QC J3X 1P7, Canada
| | - Sergei Manzhos
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
| | - Mohamed Chaker
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, 1650 boulevard Lionel Boulet, Varennes, QC J3X 1P7, Canada
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15
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Ran M, Zhao C, Xu X, Kong X, Lee Y, Cui W, Hu ZY, Roxas A, Luo Z, Li H, Ding F, Gan L, Zhai T. Boosting in-plane anisotropy by periodic phase engineering in two-dimensional VO 2 single crystals. FUNDAMENTAL RESEARCH 2022; 2:456-461. [PMID: 38933399 PMCID: PMC11197522 DOI: 10.1016/j.fmre.2021.11.020] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/11/2021] [Revised: 10/19/2021] [Accepted: 11/01/2021] [Indexed: 11/15/2022] Open
Abstract
In-plane anisotropy (IPA) due to asymmetry in lattice structures provides an additional parameter for the precise tuning of characteristic polarization-dependent properties in two-dimensional (2D) materials, but the narrow range within which such method can modulate properties hinders significant development of related devices. Herein we present a novel periodic phase engineering strategy that can remarkably enhance the intrinsic IPA obtainable from minor variations in asymmetric structures. By introducing alternant monoclinic and rutile phases in 2D VO2 single crystals through the regulation of interfacial thermal strain, the IPA in electrical conductivity can be reversibly modulated in a range spanning two orders of magnitude, reaching an unprecedented IPA of 113. Such an intriguing local phase engineering in 2D materials can be well depicted and predicted by a theoretical model consisting of phase transformation, thermal expansion, and friction force at the interface, creating a framework applicable to other 2D materials. Ultimately, the considerable adjustability and reversibility of the presented strategy provide opportunities for future polarization-dependent photoelectric and optoelectronic devices.
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Affiliation(s)
- Meng Ran
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Chao Zhao
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiao Kong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea
| | - Younghee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon, South Korea
| | - Wenjun Cui
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Centre, Wuhan University of Technology, Wuhan 430074, China
| | - Zhi-Yi Hu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Centre, Wuhan University of Technology, Wuhan 430074, China
| | - Alexander Roxas
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea
| | - Lin Gan
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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16
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Chen D, Li QM, Gao W. Role of van der Waals forces in the metal-insulator transition of transition metal oxides. Phys Chem Chem Phys 2022; 24:5455-5461. [PMID: 35174379 DOI: 10.1039/d2cp00282e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Transition metal oxides (TMOs) exhibit great potential in technological applications due to their ability to undergo a rapid metal-insulator transition (MIT). However, the phase stability of TMOs, which models the on/off voltages of electronic devices, remains controversial due to the incomplete knowledge of the determinants of its stability. Herein, we study the effect of van der Waals (vdW) interactions on the phase stability of TMOs by employing the pairwise and screened vdW methods. Our calculations manifest that the vdW interactions are crucial to the TMOs' phase stability and tend to stabilize the insulating phase. Furthermore, the long-range electrodynamic screening interactions correct the TMOs' phase stability by revising the vdW term.
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Affiliation(s)
- Da Chen
- Key Laboratory of Automobile Materials, Ministry of Education, and School of Materials Science and Engineering, Jilin University, Changchun 130022, China.
| | - Quan Ming Li
- Key Laboratory of Automobile Materials, Ministry of Education, and School of Materials Science and Engineering, Jilin University, Changchun 130022, China.
| | - Wang Gao
- Key Laboratory of Automobile Materials, Ministry of Education, and School of Materials Science and Engineering, Jilin University, Changchun 130022, China.
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17
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Lee D, Min T, Kim J, Song S, Lee J, Kang H, Lee J, Cho DY, Lee J, Jang JH, Park S. Octahedral Symmetry Modification Induced Orbital Occupancy Variation in VO 2. J Phys Chem Lett 2022; 13:75-82. [PMID: 34958580 DOI: 10.1021/acs.jpclett.1c03278] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Octahedral symmetry is one of the parameters to tune the functional properties of complex oxides. VO2, a complex oxide with a 3d1 electronic system, exhibits an insulator-metal transition (IMT) near room temperature (∼68 °C), accompanying a change in the octahedral structure from asymmetrical to symmetrical. However, the role of octahedral symmetry in VO2 on the IMT characteristics is unclear. Crystal and electronic structure analyses combined with density-functional-theory calculations showed the bandwidth-controlled IMT characteristics of monoclinic VO2 with high octahedral symmetry. The expanded apical V-O length for a high octahedral symmetry of a VO2 film increased the bandwidth of the conduction band by depressing V 3d-O 2p hybridization. As a result, the interdimer hopping energy increased and thereby decreased the IMT temperature, although the short V-V chain enhanced electron correlation. These findings suggest that octahedral symmetry can control the IMT characteristics of VO2 by changing the orbital occupancy.
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Affiliation(s)
- Dooyong Lee
- Department of Physics, Pusan National University, Busan 46241, Korea
- Korea Basic Science Institute, Daejeon 34133, Korea
| | - Taewon Min
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jiwoong Kim
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Sehwan Song
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jisung Lee
- Korea Basic Science Institute, Daejeon 34133, Korea
| | - Haeyong Kang
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jouhahn Lee
- Korea Basic Science Institute, Daejeon 34133, Korea
| | - Deok-Yong Cho
- IPIT & Department of Physics, Jeonbuk National University, Jeonju 54896, Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan 46241, Korea
| | | | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Korea
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18
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Ma H, Xiao X, Wang Y, Sun Y, Wang B, Gao X, Wang E, Jiang K, Liu K, Zhang X. Wafer-scale freestanding vanadium dioxide film. SCIENCE ADVANCES 2021; 7:eabk3438. [PMID: 34878834 PMCID: PMC8654297 DOI: 10.1126/sciadv.abk3438] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Vanadium dioxide (VO2), with well-known metal-to-insulator phase transition, has been used to realize intriguing smart functions in photodetectors, modulators, and actuators. Wafer-scale freestanding VO2 (f-VO2) films are desirable for integrating VO2 with other materials into multifunctional devices. Unfortunately, their preparation has yet to be achieved because the wafer-scale etching needs ultralong time and damages amphoteric VO2 whether in acid or alkaline etchants. Here, we achieved wafer-scale f-VO2 films by a nano-pinhole permeation-etching strategy in 6 min, far less than that by side etching (thousands of minutes). The f-VO2 films retain their pristine metal-to-insulator transition and intrinsic mechanical properties and can be conformably transferred to arbitrary substrates. Integration of f-VO2 films into diverse large-scale smart devices, including terahertz modulators, camouflageable photoactuators, and temperature-indicating strips, shows advantages in low insertion loss, fast response, and low triggering power. These f-VO2 films find more intriguing applications by heterogeneous integration with other functional materials.
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Affiliation(s)
- He Ma
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Xiao Xiao
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Yu Wang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Yufei Sun
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Xinyu Gao
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, P. R. China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, P. R. China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
- Corresponding author. (K.L.); (X.Z.)
| | - Xinping Zhang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
- Corresponding author. (K.L.); (X.Z.)
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19
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Recent Advances in Fabrication of Flexible, Thermochromic Vanadium Dioxide Films for Smart Windows. NANOMATERIALS 2021; 11:nano11102674. [PMID: 34685109 PMCID: PMC8538595 DOI: 10.3390/nano11102674] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 09/26/2021] [Accepted: 10/05/2021] [Indexed: 11/17/2022]
Abstract
Monoclinic-phase VO2 (VO2(M)) has been extensively studied for use in energy-saving smart windows owing to its reversible insulator–metal transition property. At the critical temperature (Tc = 68 °C), the insulating VO2(M) (space group P21/c) is transformed into metallic rutile VO2 (VO2(R) space group P42/mnm). VO2(M) exhibits high transmittance in the near-infrared (NIR) wavelength; however, the NIR transmittance decreases significantly after phase transition into VO2(R) at a higher Tc, which obstructs the infrared radiation in the solar spectrum and aids in managing the indoor temperature without requiring an external power supply. Recently, the fabrication of flexible thermochromic VO2(M) thin films has also attracted considerable attention. These flexible films exhibit considerable potential for practical applications because they can be promptly applied to windows in existing buildings and easily integrated into curved surfaces, such as windshields and other automotive windows. Furthermore, flexible VO2(M) thin films fabricated on microscales are potentially applicable in optical actuators and switches. However, most of the existing fabrication methods of phase-pure VO2(M) thin films involve chamber-based deposition, which typically require a high-temperature deposition or calcination process. In this case, flexible polymer substrates cannot be used owing to the low-thermal-resistance condition in the process, which limits the utilization of flexible smart windows in several emerging applications. In this review, we focus on recent advances in the fabrication methods of flexible thermochromic VO2(M) thin films using vacuum deposition methods and solution-based processes and discuss the optical properties of these flexible VO2(M) thin films for potential applications in energy-saving smart windows and several other emerging technologies.
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20
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Bayram F, Gajula D, Khan D, Uppalapati B, Azad S, Koley G. Voltage triggered near-infrared light modulation using VO 2 thin film. OPTICS EXPRESS 2021; 29:32124-32134. [PMID: 34615290 DOI: 10.1364/oe.432245] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 08/31/2021] [Indexed: 06/13/2023]
Abstract
Development of compact and fast modulators of infrared light has garnered strong research interests in recent years due to their potential applications in communication, imaging, and sensing. In this study, electric field induced fast modulation near-infrared light caused by phase change in VO2 thin films grown on GaN suspended membranes has been reported. It was observed that metal insulator transition caused by temperature change or application of electric field, using an interdigitated finger geometry, resulted in 7% and 14% reduction in transmitted light intensity at near-infrared wavelengths of 790 and 1550 nm, respectively. Near-infrared light modulation has been demonstrated with voltage pulse widths down to 300 µs at 25 V magnitude. Finite element simulations performed on the suspended membrane modulator indicate a combination of the Joule heating and electric field is responsible for the phase transition.
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21
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Wang JN, Xiong B, Peng RW, Li CY, Hou BQ, Chen CW, Liu Y, Wang M. Flexible Phase Change Materials for Electrically-Tuned Active Absorbers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101282. [PMID: 34173329 DOI: 10.1002/smll.202101282] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Revised: 04/25/2021] [Indexed: 06/13/2023]
Abstract
Phase change materials (PCMs), such as GeSbTe (GST) alloys and vanadium dioxide (VO2 ), play an important role in dynamically tunable optical metadevices. However, the PCMs usually require high thermal annealing temperatures above 700 K, but most flexible metadevices can only work below 500 K owing to the thermal instability of polymer substrates. This contradiction limits the integration of PCMs into flexible metadevices. Here, a mica sheet is chosen as the chemosynthetic support for VO2 and a smooth and uniformly flexible phase change material (FPCM) is realized. Such FPCMs can withstand high temperatures while remaining mechanically flexible. As an example, a metal-FPCM-metal infrared meta-absorber with mechanical flexibility and electrical tunability is demonstrated. Based on the electrically-tuned phase transition of FPCMs, the infrared absorption of the metadevice is continuously tuned from 20% to 90% as the applied current changes, and it remains quite stable at bending states. The metadevice is bent up to 1500 times, while no visible deterioration is detected. For the first time, the FPCM metastructures are significantly added to the flexible material family, and the FPCM-based metadevices show various application prospects in electrically-tunable conformal metadevices, dynamic flexible photodetectors, and active wearable devices.
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Affiliation(s)
- Jia-Nan Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Bo Xiong
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Ru-Wen Peng
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Cheng-Yao Li
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Ben-Qi Hou
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Chao-Wei Chen
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yu Liu
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Mu Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- American Physical Society, Ridge, NY, 11961, USA
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22
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Shi R, Chen Y, Cai X, Lian Q, Zhang Z, Shen N, Amini A, Wang N, Cheng C. Phase management in single-crystalline vanadium dioxide beams. Nat Commun 2021; 12:4214. [PMID: 34244501 PMCID: PMC8270972 DOI: 10.1038/s41467-021-24527-5] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2021] [Accepted: 06/24/2021] [Indexed: 11/10/2022] Open
Abstract
A systematic study of various metal-insulator transition (MIT) associated phases of VO2, including metallic R phase and insulating phases (T, M1, M2), is required to uncover the physics of MIT and trigger their promising applications. Here, through an oxide inhibitor-assisted stoichiometry engineering, we show that all the insulating phases can be selectively stabilized in single-crystalline VO2 beams at room temperature. The stoichiometry engineering strategy also provides precise spatial control of the phase configurations in as-grown VO2 beams at the submicron-scale, introducing a fresh concept of phase transition route devices. For instance, the combination of different phase transition routes at the two sides of VO2 beams gives birth to a family of single-crystalline VO2 actuators with highly improved performance and functional diversity. This work provides a substantial understanding of the stoichiometry-temperature phase diagram and a stoichiometry engineering strategy for the effective phase management of VO2. Control of the phases associated with the metal-insulator transition in VO2 underpins its applications as a phase change material. Here, the authors report phase management by means of oxide inhibitor-assisted growth and present high-performance VO2 actuators based on asymmetric phase transition routes.
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Affiliation(s)
- Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.,Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Yong Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.,Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Xiangbin Cai
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Qing Lian
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Zhuoqiong Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Nan Shen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW, Australia
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, People's Republic of China.
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23
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Hong S, Lee M, Lee MW, Kim D. Sharp Phase Transition by the Enhanced Lattice Stability of Low‐Temperature Phase of Cr‐Doped
VO
2
. B KOREAN CHEM SOC 2021. [DOI: 10.1002/bkcs.12353] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Seong‐Cheol Hong
- Department of Chemistry Pukyong National University, 45 Yongso‐ro, Nam‐gu Busan 48513 Republic of Korea
| | - Myeongsoon Lee
- Department of Chemistry Pukyong National University, 45 Yongso‐ro, Nam‐gu Busan 48513 Republic of Korea
| | - Myung Won Lee
- Department of Chemistry Pukyong National University, 45 Yongso‐ro, Nam‐gu Busan 48513 Republic of Korea
| | - Don Kim
- Department of Chemistry Pukyong National University, 45 Yongso‐ro, Nam‐gu Busan 48513 Republic of Korea
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Zhang Y, Xiong W, Chen W, Zheng Y. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives. NANOMATERIALS 2021; 11:nano11020338. [PMID: 33525597 PMCID: PMC7911400 DOI: 10.3390/nano11020338] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Revised: 01/19/2021] [Accepted: 01/20/2021] [Indexed: 01/24/2023]
Abstract
Vanadium dioxide (VO2) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO2 is accompanied by sudden changes in conductance and optical transmittance. Due to the excellent phase transition characteristics of VO2, it has been widely studied in the applications of electric and optical devices, smart windows, sensors, actuators, etc. In this review, we provide a summary about several phases of VO2 and their corresponding structural features, the typical fabrication methods of VO2 nanostructures (e.g., thin film and low-dimensional structures (LDSs)) and the properties and related applications of VO2. In addition, the challenges and opportunities for VO2 in future studies and applications are also discussed.
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Affiliation(s)
- Yanqing Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weiming Xiong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (W.X.); (Y.Z.)
| | - Weijin Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Yue Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (W.X.); (Y.Z.)
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25
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Krisponeit JO, Fischer S, Esser S, Moshnyaga V, Schmidt T, Piper LFJ, Flege JI, Falta J. The morphology of VO 2/TiO 2(001): terraces, facets, and cracks. Sci Rep 2020; 10:22374. [PMID: 33361795 PMCID: PMC7758337 DOI: 10.1038/s41598-020-78584-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2020] [Accepted: 11/20/2020] [Indexed: 12/03/2022] Open
Abstract
Vanadium dioxide (VO2) features a pronounced, thermally-driven metal-to-insulator transition at 340 K. Employing epitaxial stress on rutile \documentclass[12pt]{minimal}
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\begin{document}$$\text{TiO}_{2}(001)$$\end{document}TiO2(001) substrates, the transition can be tuned to occur close to room temperature. Striving for applications in oxide-electronic devices, the lateral homogeneity of such samples must be considered as an important prerequisite for efforts towards miniaturization. Moreover, the preparation of smooth surfaces is crucial for vertically stacked devices and, hence, the design of functional interfaces. Here, the surface morphology of \documentclass[12pt]{minimal}
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\begin{document}$$\text{VO}_2/\text{TiO}_2(001)$$\end{document}VO2/TiO2(001) films was analyzed by low-energy electron microscopy and diffraction as well as scanning probe microscopy. The formation of large terraces could be achieved under temperature-induced annealing, but also the occurrence of facets was observed and characterized. Further, we report on quasi-periodic arrangements of crack defects which evolve due to thermal stress under cooling. While these might impair some applicational endeavours, they may also present crystallographically well-oriented nano-templates of bulk-like properties for advanced approaches.
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Affiliation(s)
- Jon-Olaf Krisponeit
- Institute of Solid State Physics, University of Bremen, 28359, Bremen, Germany. .,MAPEX Center for Materials and Processes, University of Bremen, 28359, Bremen, Germany.
| | - Simon Fischer
- Institute of Solid State Physics, University of Bremen, 28359, Bremen, Germany
| | - Sven Esser
- Experimentalphysik VI, Universität Augsburg, 86159, Augsburg, Germany.,I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077, Göttingen, Germany
| | - Vasily Moshnyaga
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077, Göttingen, Germany
| | - Thomas Schmidt
- Institute of Solid State Physics, University of Bremen, 28359, Bremen, Germany.,MAPEX Center for Materials and Processes, University of Bremen, 28359, Bremen, Germany
| | | | - Jan Ingo Flege
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, 03046, Cottbus, Germany
| | - Jens Falta
- Institute of Solid State Physics, University of Bremen, 28359, Bremen, Germany.,MAPEX Center for Materials and Processes, University of Bremen, 28359, Bremen, Germany
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26
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Nanoscale-femtosecond dielectric response of Mott insulators captured by two-color near-field ultrafast electron microscopy. Nat Commun 2020; 11:5770. [PMID: 33188192 PMCID: PMC7666229 DOI: 10.1038/s41467-020-19636-6] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2020] [Accepted: 10/26/2020] [Indexed: 11/09/2022] Open
Abstract
Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of strongly-correlated systems. Here, we use two-color near-field ultrafast electron microscopy to photo-induce the insulator-to-metal transition in a single VO2 nanowire and probe the ensuing electronic dynamics with combined nanometer-femtosecond resolution (10−21 m ∙ s). We take advantage of a femtosecond temporal gating of the electron pulse mediated by an infrared laser pulse, and exploit the sensitivity of inelastic electron-light scattering to changes in the material dielectric function. By spatially mapping the near-field dynamics of an individual nanowire of VO2, we observe that ultrafast photo-doping drives the system into a metallic state on a timescale of ~150 fs without yet perturbing the crystalline lattice. Due to the high versatility and sensitivity of the electron probe, our method would allow capturing the electronic dynamics of a wide range of nanoscale materials with ultimate spatiotemporal resolution. The fs control of an insulator-to-metal transition down to a few nanometers and its real-time/real space observation remain a challenge. Here, the authors demonstrate a method based on ultrafast electron microscopy to provide a nm/fs resolved view of the electronic dynamics in a single VO2 nanowire.
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27
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Rashid MA, Mondal BK, Rubel MHK, Rahman MM, Mefford OT, Hossain J. Synthesis of Self-Assembled Randomly Oriented VO 2 Nanowires on a Glass Substrate by a Spin Coating Method. Inorg Chem 2020; 59:15707-15716. [PMID: 33078925 DOI: 10.1021/acs.inorgchem.0c02108] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Randomly oriented vanadium dioxide (VO2) nanowires were produced on a glass substrate by spin coating from a cosolvent. SEM studies reveal that highly dense VO2 nanowires were grown at an annealing temperature of 400 °C. X-ray diffraction (XRD) provides evidence of the high crystallinity of the VO2 nanowires-embedded VO2 thin films on the glass substrate at 400 °C. Characterization by high-resolution transmission electron microscopy (HR-TEM) confirmed the formation of VO2 nanowires. The optical band gap of the nanowires-embedded VO2 thin films was also calculated from the transmittance data to be 2.65-2.70 eV. The growth mechanism of the solution-processed semiconducting VO2 nanowires was proposed based on both solvent selection and annealing temperature. Finally, the solar water splitting ability of the VO2 nanowires-embedded VO2 thin films was demonstrated in a photoelectrochemical cell (PEC).
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Affiliation(s)
- Md Abdur Rashid
- Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi 6205, Bangladesh.,Department of Physics, University of Rajshahi, Rajshahi 6205, Bangladesh
| | - Bipanko Kumar Mondal
- Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi 6205, Bangladesh
| | - Mirza H K Rubel
- Department of Materials Science and Engineering, University of Rajshahi, Rajshahi 6205, Bangladesh
| | - Md Mahbubor Rahman
- Department of Chemistry, University of Rajshahi, Rajshahi 6205, Bangladesh.,Department of Materials Science & Engineering, Clemson University, Clemson, South Carolina 29634-0971, United States
| | - Olin Thompson Mefford
- Department of Materials Science & Engineering, Clemson University, Clemson, South Carolina 29634-0971, United States
| | - Jaker Hossain
- Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi 6205, Bangladesh
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28
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Bayram F, Gajula D, Khan D, Koley G. Investigation of AlGaN/GaN HFET and VO 2 Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers. MICROMACHINES 2020; 11:mi11090875. [PMID: 32962251 PMCID: PMC7570367 DOI: 10.3390/mi11090875] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Revised: 09/08/2020] [Accepted: 09/18/2020] [Indexed: 11/16/2022]
Abstract
The static and dynamic deflection transducing performances of piezotransistive AlGaN/GaN heterojunction field effect transistors (HFET) and piezoresistive VO2 thin films, fabricated on GaN microcantilevers of similar dimensions, were investigated. Deflection sensitivities were tuned with the gate bias and operating temperature for embedded AlGaN/GaN HFET and VO2 thin film transducers, respectively. The GaN microcantilevers were excited with a piezoactuator in their linear and nonlinear oscillation regions of the fundamental oscillatory mode. In the linear regime, the maximum deflection sensitivity of piezotransistive AlGaN/GaN HFET reached up to a 0.5% change in applied drain voltage, while the responsivity of the piezoresistive VO2 thin film based deflection transducer reached a maximum value of 0.36% change in applied drain current. The effects of the gate bias and the operation temperature on nonlinear behaviors of the microcantilevers were also experimentally examined. Static deflection sensitivity measurements demonstrated a large change of 16% in drain-source resistance of the AlGaN/GaN HFET, and a similarly high 11% change in drain-source resistance in the VO2 thin film, corresponding to a 10 μm downward step bending of the cantilever free end.
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Affiliation(s)
- Ferhat Bayram
- Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA; (D.K.); (G.K.)
- Correspondence: ; Tel.: +1-(864)-650-5196
| | - Durga Gajula
- School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332, USA;
| | - Digangana Khan
- Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA; (D.K.); (G.K.)
| | - Goutam Koley
- Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA; (D.K.); (G.K.)
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29
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Ma H, Wang Y, Fu Y, Zhang X. A bottom-up strategy toward a flexible vanadium dioxide/silicon nitride composite film with infrared sensing performance. NANOSCALE 2020; 12:11863-11867. [PMID: 32484197 DOI: 10.1039/d0nr02358b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Vanadium dioxide (VO2) attracts great attention due to its well-known metal-to-insulator transition. However, traditional VO2 films grown on rigid substrates are inflexible, which limits their applications. In this work, we successfully prepared VO2/silicon nitride (VO2/SN) composite films by a simple template method. The VO2/SN film shows high flexibility, strong infrared absorption, and drastic resistance change (>103) induced by the phase transition. The application of the VO2/SN film is presented by infrared sensing, which shows a high responsivity (720 V W-1) and short response time (409 ms).
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Affiliation(s)
- He Ma
- College of science, Beijing University of Technology, Beijing, China. zhangxinping@bjut. edu.cn
| | - Yu Wang
- College of science, Beijing University of Technology, Beijing, China. zhangxinping@bjut. edu.cn
| | - Yulan Fu
- College of science, Beijing University of Technology, Beijing, China. zhangxinping@bjut. edu.cn
| | - Xinping Zhang
- College of science, Beijing University of Technology, Beijing, China. zhangxinping@bjut. edu.cn
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30
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Hong S, Lee M, Kim D. An Invariable Temperature during the Phase Transition of W Doped VO
2
Film. B KOREAN CHEM SOC 2020. [DOI: 10.1002/bkcs.11975] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Seong‐Cheol Hong
- Department of ChemistryPukyong National University Busan 48513 South Korea
| | - Myeongsoon Lee
- Department of ChemistryPukyong National University Busan 48513 South Korea
| | - Don Kim
- Department of ChemistryPukyong National University Busan 48513 South Korea
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31
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Lee HJ, Yang UJ, Kim KN, Park S, Kil KH, Kim JS, Wodtke AM, Choi WJ, Kim MH, Baik JM. Directional Ostwald Ripening for Producing Aligned Arrays of Nanowires. NANO LETTERS 2019; 19:4306-4313. [PMID: 31192615 DOI: 10.1021/acs.nanolett.9b00684] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The remarkable electronic and mechanical properties of nanowires have great potential for fascinating applications; however, the difficulties of assembling ordered arrays of aligned nanowires over large areas prevent their integration into many practical devices. In this paper, we show that aligned VO2 nanowires form spontaneously after heating a thin V2O5 film on a grooved SiO2 surface. Nanowires grow after complete dewetting of the film, after which there is the formation of supercooled nanodroplets and subsequent Ostwald ripening and coalescence. We investigate the growth mechanism using molecular dynamics simulations of spherical Lennard-Jones particles, and the simulations help explain how the grooved surface produces aligned nanowires. Using this simple synthesis approach, we produce self-aligned, millimeter-long nanowire arrays with uniform metal-insulator transition properties; after their transfer to a polymer substrate, the nanowires act as a highly sensitive array of strain sensors with a very fast response time of several tens of milliseconds.
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Affiliation(s)
- Hye Jin Lee
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
| | - U Jeong Yang
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
| | - Kyeong Nam Kim
- Department of Nanoengineering , University of California, San Diego (UCSD) , La Jolla , California 92093 , United States
| | - Soojin Park
- Department of Chemistry , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Republic of Korea
| | - Kye Hyoung Kil
- Department of Chemistry & Nanoscience , Ewha Womans University , Seoul 03760 , Republic of Korea
| | - Jun Soo Kim
- Department of Chemistry & Nanoscience , Ewha Womans University , Seoul 03760 , Republic of Korea
| | - Alec M Wodtke
- Department of Dynamics at Surfaces , Max Planck Institute for Biophysical Chemistry (MPI-BPC) , Göttingen 37077 , Germany
| | - Won Jun Choi
- Center for Optoelectronic Materials and Devices , Korea Institute of Science and Technology (KIST) , Seoul 02792 , Republic of Korea
| | - Myung Hwa Kim
- Department of Chemistry & Nanoscience , Ewha Womans University , Seoul 03760 , Republic of Korea
| | - Jeong Min Baik
- School of Materials Science and Engineering, KIST-UNIST-Ulsan Center for Convergent Materials , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Republic of Korea
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32
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Large Scale Synthesis of Nanopyramidal-Like VO₂ Films by an Oxygen-Assisted Etching Growth Method with Significantly Enhanced Field Emission Properties. NANOMATERIALS 2019; 9:nano9040549. [PMID: 30987293 PMCID: PMC6523309 DOI: 10.3390/nano9040549] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2019] [Revised: 03/20/2019] [Accepted: 03/28/2019] [Indexed: 01/30/2023]
Abstract
The present investigation reported on a novel oxygen-assisted etching growth method that can directly transform wafer-scale plain VO₂ thin films into pyramidal-like VO₂ nanostructures with highly improved field-emission properties. The oxygen applied during annealing played a key role in the formation of the special pyramidal-like structures by introducing thin oxygen-rich transition layers on the top surfaces of the VO₂ crystals. An etching related growth and transformation mechanism for the synthesis of nanopyramidal films was proposed. Structural characterizations confirmed the formation of a composite VO₂ structure of monoclinic M1 (P21/c) and Mott insulating M2 (C2/m) phases for the films at room temperature. Moreover, by varying the oxygen concentration, the nanocrystal morphology of the VO₂ films could be tuned, ranging over pyramidal, dot, and/or twin structures. These nanopyramidal VO₂ films showed potential benefits for application such as temperature-regulated field emission devices. For one typical sample deposited on a 3-inch silicon substrate, its emission current (measured at 6 V/μm) increased by about 1000 times after the oxygen-etching treatment, and the field enhancement factor β reached as high as 3810 and 1620 for the M and R states, respectively. The simple method reported in the present study may provide a protocol for building a variety of large interesting surfaces for VO₂-based device applications.
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33
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Hong KT, Moon CW, Suh JM, Lee TH, Kim SI, Lee S, Jang HW. Daylight-Induced Metal-Insulator Transition in Ag-Decorated Vanadium Dioxide Nanorod Arrays. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11568-11578. [PMID: 30834745 DOI: 10.1021/acsami.8b19490] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Metal-insulator transition (MIT) in strongly correlated electronic materials has enormous potential with scientific and technological impacts in future oxide nanoelectronic devices. Although photo-induced MIT can provide opportunities to extend the novel functionality of strongly correlated electronic materials, there have rarely been reports on it. Here, we report MIT provoked by visible-near-infrared light in Ag-decorated VO2 nanorod arrays (NRs) because of localized surface plasmon resonance (LSPR) and its application to broadband photodetectors. Our simulation results based on the finite-difference time-domain method show that the electric field resulting from LSPR can be generated at the interface between Ag nanoparticles and VO2 layers under vis NIR illumination. Using high-resolution transmission electronic microscopy and Raman spectroscopy, we observe the MIT and structural phase transition in the Ag-decorated VO2 NRs due to the LSPR effect. The optoelectronic measurements confirm that high, fast, and broad photoresponse of Ag-decorated VO2 NRs is attributed to photo-induced MIT due to LSPR. Our study will open up a new strategy to trigger MIT in strongly correlated electronic materials through functionalization with plasmonic nanoparticles and serve as a valuable proof of concept for next-generation optoelectronic devices with fast response, low power consumption, and high performance.
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Affiliation(s)
- Koo Tak Hong
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Cheon Woo Moon
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Jun Min Suh
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Seong-Il Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Sanghan Lee
- School of Materials Science and Engineering , Gwangju Institute of Science and Technology , Gwangju 61005 , Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
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Understanding of metal-insulator transition in VO 2 based on experimental and theoretical investigations of magnetic features. Sci Rep 2018; 8:17093. [PMID: 30459463 PMCID: PMC6244010 DOI: 10.1038/s41598-018-35490-5] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2017] [Accepted: 11/06/2018] [Indexed: 11/30/2022] Open
Abstract
The metal-insulator transition temperature Tc in VO2 is experimentally shown to be almost the same as a magnetic transition temperature Tm characterized by an abrupt decrease in susceptibility, suggesting the evidence of the same underlying origin for both transitions. The measurement of susceptibility shows that it weakly increases on cooling for temperature range of T > Tm, sharply decreases near Tm and then unusually increases on further cooling. A theoretical approach for such unusual observations in susceptibility near Tm or below is performed by modeling electrons from each two adjacent V4+ ions distributed along V-chains as a two-electron system, which indicates that the spin exchange between electrons could cause a level splitting into a singlet (S = 0) level of lower energy and a triplet (S = 1) level of higher energy. The observed abrupt decrease in susceptibility near Tm is explained to be due to that the sample enters the singlet state in which two electrons from adjacent V4+ ions are paired into dimers in spin antiparallel. By considering paramagnetic contribution of unpaired electrons created by the thermal activation from singlet to triplet levels, an expression for susceptibility is proposed to quantitatively explain the unusual temperature-dependent susceptibility observed at low temperatures. Based on the approach to magnetic features, the observed metal-insulator transition is explained to be due to a transition from high-temperature Pauli paramagnetic metallic state of V4+ions to low-temperature dimerized state of strong electronic localization.
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35
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Ke Y, Wang S, Liu G, Li M, White TJ, Long Y. Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications. SMALL 2018; 14:e1802025. [PMID: 30085392 DOI: 10.1002/smll.201802025] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 06/24/2018] [Indexed: 05/12/2023]
Affiliation(s)
- Yujie Ke
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Shancheng Wang
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Guowei Liu
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Ming Li
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Key Laboratory of Materials Physics; Anhui Key Laboratory of Nanomaterials and Nanotechnology; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P. R. China
| | - Timothy J. White
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Yi Long
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Singapore-HUJ Alliance for Research and Enterprise (SHARE); Nanomaterials for Energy and Energy-Water Nexus (NEW); Campus for Research Excellence and Technological Enterprise (CREATE); 1 Create Way Singapore 138602 Singapore
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36
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Xiong WM, Shao J, Zhang YQ, Chen Y, Zhang XY, Chen WJ, Zheng Y. Morphology-controlled epitaxial vanadium dioxide low-dimensional structures: the delicate effects on the phase transition behaviors. Phys Chem Chem Phys 2018; 20:14339-14347. [PMID: 29683159 DOI: 10.1039/c7cp08432c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
As an important strongly correlated electron material, VO2 undergoes a metal-insulator transition (MIT) accompanied by a huge change of several orders of magnitude in conductance and transmittance. The MIT behavior can be controlled by low-dimensional structures (LDSs) and the interaction between LDSs and substrates. Consequently, fabricating the LDSs and understanding the phase transition behaviors have great significance for the investigation of fundamental properties and applications. Using the pulsed laser deposition technique, we fabricate abundant LDSs (i.e., from zero-dimensional nanodots, one-dimensional nanowires, nanobelts and nanorods to two-dimensional nanoplatelets and ultra-thin films, and zero-/one-/two-dimensional mixed structures), and investigate the controllability of each deposition factor on the growth of the LDSs. TEM results confirm the high crystallinity of the as-synthesized LDSs. AFM results and ab initio calculations demonstrate the great influence of substrates on the growth orientation of the LDSs. More importantly, we systematically investigate the phase transition characteristics of the LDSs by temperature-dependent Raman spectroscopy and XRD. The results clearly reveal the structural dependence of the phase transition features due to the delicate effects of substrates and structures. Our technique provides a rapid, controllable and easy method for fabricating VO2 LDSs, which can lead to a deeper understanding of the electrical, optical, and magnetic properties and potential applications of VO2.
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Affiliation(s)
- W M Xiong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, 510275, Guangzhou, China.
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37
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Tian Z, Xu B, Hsu B, Stan L, Yang Z, Mei Y. Reconfigurable Vanadium Dioxide Nanomembranes and Microtubes with Controllable Phase Transition Temperatures. NANO LETTERS 2018; 18:3017-3023. [PMID: 29633849 DOI: 10.1021/acs.nanolett.8b00483] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two additional structural forms, free-standing nanomembranes and microtubes, are reported and added to the vanadium dioxide (VO2) material family. Free-standing VO2 nanomembranes were fabricated by precisely thinning as-grown VO2 thin films and etching away the sacrificial layer underneath. VO2 microtubes with a range of controllable diameters were rolled-up from the VO2 nanomembranes. When a VO2 nanomembrane is rolled-up into a microtubular structure, a significant compressive strain is generated and accommodated therein, which decreases the phase transition temperature of the VO2 material. The magnitude of the compressive strain is determined by the curvature of the VO2 microtube, which can be rationally and accurately designed by controlling the tube diameter during the rolling-up fabrication process. The VO2 microtube rolling-up process presents a novel way to controllably tune the phase transition temperature of VO2 materials over a wide range toward practical applications. Furthermore, the rolling-up process is reversible. A VO2 microtube can be transformed back into a nanomembrane by introducing an external strain. Because of its tunable phase transition temperature and reversible shape transformation, the VO2 nanomembrane-microtube structure is promising for device applications. As an example application, a tubular microactuator device with low driving energy but large displacement is demonstrated at various triggering temperatures.
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Affiliation(s)
- Ziao Tian
- Department of Materials Science, State Key Laboratory of ASIC and Systems , Fudan University , 200433 Shanghai , PR China
| | - Borui Xu
- Department of Materials Science, State Key Laboratory of ASIC and Systems , Fudan University , 200433 Shanghai , PR China
| | - Bo Hsu
- Department of Electrical and Computer Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
| | - Liliana Stan
- Center for Nanoscale Materials , Argonne National Laboratory , Lemont , Illinois 60439 , United States
| | - Zheng Yang
- Department of Electrical and Computer Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
| | - YongFeng Mei
- Department of Materials Science, State Key Laboratory of ASIC and Systems , Fudan University , 200433 Shanghai , PR China
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Dong K, Hong S, Deng Y, Ma H, Li J, Wang X, Yeo J, Wang L, Lou S, Tom KB, Liu K, You Z, Wei Y, Grigoropoulos CP, Yao J, Wu J. A Lithography-Free and Field-Programmable Photonic Metacanvas. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30. [PMID: 29226459 DOI: 10.1002/adma.201703878] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2017] [Revised: 09/27/2017] [Indexed: 05/15/2023]
Abstract
The unique correspondence between mathematical operators and photonic elements in wave optics enables quantitative analysis of light manipulation with individual optical devices. Phase-transition materials are able to provide real-time reconfigurability of these devices, which would create new optical functionalities via (re)compilation of photonic operators, as those achieved in other fields such as field-programmable gate arrays (FPGA). Here, by exploiting the hysteretic phase transition of vanadium dioxide, an all-solid, rewritable metacanvas on which nearly arbitrary photonic devices can be rapidly and repeatedly written and erased is presented. The writing is performed with a low-power laser and the entire process stays below 90 °C. Using the metacanvas, dynamic manipulation of optical waves is demonstrated for light propagation, polarization, and reconstruction. The metacanvas supports physical (re)compilation of photonic operators akin to that of FPGA, opening up possibilities where photonic elements can be field programmed to deliver complex, system-level functionalities.
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Affiliation(s)
- Kaichen Dong
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, 100084, P. R. China
| | - Sukjoon Hong
- Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
- Department of Mechanical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Republic of Korea
| | - Yang Deng
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - He Ma
- Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, P. R. China
| | - Jiachen Li
- Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, P. R. China
| | - Xi Wang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Junyeob Yeo
- Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
- Department of Physics, Kyungpook National University, 80 Daehak-ro, Bukgu, Daegu, 41566, Republic of Korea
| | - Letian Wang
- Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
| | - Shuai Lou
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Kyle B Tom
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Zheng You
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, 100084, P. R. China
| | - Yang Wei
- Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, P. R. China
| | - Costas P Grigoropoulos
- Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
| | - Jie Yao
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Junqiao Wu
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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39
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Xu HY, Xu KW, Ma F, Chu PK. Hexagonal VO2 particles: synthesis, mechanism and thermochromic properties. RSC Adv 2018; 8:10064-10071. [PMID: 35540861 PMCID: PMC9078730 DOI: 10.1039/c8ra00716k] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2018] [Accepted: 03/06/2018] [Indexed: 11/24/2022] Open
Abstract
Monoclinic vanadium dioxide VO2 (M) with hexagonal structure is synthesized by hydrothermal method, and the phase evolution is evidenced. Interestingly, the hexagonal morphology comes into being as a result of the low-energy coherent interfaces, (211̄)1//(21̄1̄)2 and (21̄1̄)1//(020)2. The size of hexagonal particles is well controlled by changing the concentration of precursor solutions. Hexagonal particles exhibit excellent thermochromic properties with a narrow hysteresis of 5.9 °C and high stability. In addition, the phase transition temperature can be substantially reduced down to 28 °C by simply W doping. Monoclinic vanadium dioxide VO2 (M) with hexagonal structure is synthesized by hydrothermal method, and the phase evolution is evidenced.![]()
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Affiliation(s)
- Hui Yan Xu
- State Key Laboratory for Mechanical Behavior of Materials
- Xi'an Jiaotong University
- Xi'an 710049
- China
- Department of Physics and Materials Science
| | - Ke Wei Xu
- State Key Laboratory for Mechanical Behavior of Materials
- Xi'an Jiaotong University
- Xi'an 710049
- China
- Department of Physics and Opt-electronic Engineering
| | - Fei Ma
- State Key Laboratory for Mechanical Behavior of Materials
- Xi'an Jiaotong University
- Xi'an 710049
- China
- Department of Physics and Materials Science
| | - Paul K. Chu
- Department of Physics and Materials Science
- City University of Hong Kong
- Kowloon
- China
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40
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Taha M, Walia S, Ahmed T, Headland D, Withayachumnankul W, Sriram S, Bhaskaran M. Insulator-metal transition in substrate-independent VO 2 thin film for phase-change devices. Sci Rep 2017; 7:17899. [PMID: 29263388 PMCID: PMC5738395 DOI: 10.1038/s41598-017-17937-3] [Citation(s) in RCA: 45] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2017] [Accepted: 11/24/2017] [Indexed: 11/30/2022] Open
Abstract
Vanadium has 11 oxide phases, with the binary VO2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator-to-metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO2 synthesis have also been standing issues in VO2 fabrication. Here, we address these major challenges in harnessing the functionality in VO2 by demonstrating an approach that enables crystalline, switchable VO2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO2 on any substrate, thereby exploiting its untapped potential.
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Affiliation(s)
- Mohammad Taha
- Functional Materials and Microsystems Research Group and Micro Nano Research Facility, RMIT University, Melbourne, Victoria, 3001, Australia.
| | - Sumeet Walia
- Functional Materials and Microsystems Research Group and Micro Nano Research Facility, RMIT University, Melbourne, Victoria, 3001, Australia
| | - Taimur Ahmed
- Functional Materials and Microsystems Research Group and Micro Nano Research Facility, RMIT University, Melbourne, Victoria, 3001, Australia
| | - Daniel Headland
- School of Electrical and Electronic Engineering, The University of Adelaide, South Australia, 5005, Australia
| | - Withawat Withayachumnankul
- School of Electrical and Electronic Engineering, The University of Adelaide, South Australia, 5005, Australia
| | - Sharath Sriram
- Functional Materials and Microsystems Research Group and Micro Nano Research Facility, RMIT University, Melbourne, Victoria, 3001, Australia
| | - Madhu Bhaskaran
- Functional Materials and Microsystems Research Group and Micro Nano Research Facility, RMIT University, Melbourne, Victoria, 3001, Australia.
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41
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Li M, Magdassi S, Gao Y, Long Y. Hydrothermal Synthesis of VO 2 Polymorphs: Advantages, Challenges and Prospects for the Application of Energy Efficient Smart Windows. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701147. [PMID: 28722273 DOI: 10.1002/smll.201701147] [Citation(s) in RCA: 83] [Impact Index Per Article: 11.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2017] [Revised: 06/03/2017] [Indexed: 06/07/2023]
Abstract
Vanadium dioxide (VO2 ) is a widely studied inorganic phase change material, which has a reversible phase transition from semiconducting monoclinic to metallic rutile phase at a critical temperature of τc ≈ 68 °C. The abrupt decrease of infrared transmittance in the metallic phase makes VO2 a potential candidate for thermochromic energy efficient windows to cut down building energy consumption. However, there are three long-standing issues that hindered its application in energy efficient windows: high τc , low luminous transmittance (Tlum ), and undesirable solar modulation ability (ΔTsol ). Many approaches, including nano-thermochromism, porous films, biomimetic surface reconstruction, gridded structures, antireflective overcoatings, etc, have been proposed to tackle these issues. The first approach-nano-thermochromism-which is to integrate VO2 nanoparticles in a transparent matrix, outperforms the rest; while the thermochromic performance is determined by particle size, stoichiometry, and crystallinity. A hydrothermal method is the most common method to fabricate high-quality VO2 nanoparticles, and has its own advantages of large-scale synthesis and precise phase control of VO2 . This Review focuses on hydrothermal synthesis, physical properties of VO2 polymorphs, and their transformation to thermochromic VO2 (M), and discusses the advantages, challenges, and prospects of VO2 (M) in energy-efficient smart windows application.
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Affiliation(s)
- Ming Li
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Shlomo Magdassi
- Institute of Chemistry, The Hebrew University, Edmond Safra Campus, Jerusalem, 91904, Israel
| | - Yanfeng Gao
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
| | - Yi Long
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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42
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Jiang C, Chen L, Ji S, Liu J, Zhang Z, Jin P, Wang Y, Zhang Z. Atomic scale observation of a defect-mediated first-order phase transition in VO 2(A). NANOSCALE 2017; 9:9834-9840. [PMID: 28513694 DOI: 10.1039/c7nr01513e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The study of first-order structural transformations has attracted extensive attention due to their significant scientific and industrial importance. However, it remains challenging to exactly determine the nucleation sites at the very beginning of the transformation. Here, we report the atomic scale real-time observation of a unique defect-mediated reversible phase transition between the low temperature phase (LTP) and the high temperature phase (HTP) of VO2(A). In situ Cs-corrected scanning transmission electron microscopy (STEM) images clearly indicate that both phase transitions (from the HTP to the LTP and from the LTP to the HTP) start at the defect sites in parent phases. Intriguingly, the structure of the defects within the LTP is demonstrated to be the HTP of VO2 (A), and the defect in the HTP of VO2(A) is determined to be the LTP structure of VO2(A). These findings are expected to broaden our current understanding of the first-order phase transition and shed light on controlling materials' structure-property phase transition by "engineering" defects in applications.
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Affiliation(s)
- Chao Jiang
- Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
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43
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Sohn JI, Cha SN, Son SB, Kim JM, Welland ME, Hong WK. Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO 2 nanobeams. NANOSCALE 2017; 9:8200-8206. [PMID: 28580984 DOI: 10.1039/c7nr00318h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We demonstrate the current-dependent consecutive appearance of two different negative differential resistance (NDR) transitions in a single crystalline VO2 nanobeam epitaxially grown on a c-cut sapphire substrate. It is revealed that the first NDR occurs at an approximately constant current level as a result of the carrier injection-induced transition, independent of a thermally induced phase transition. In contrast, it is observed that the second NDR exhibits a temperature-dependent behavior and current values triggering the metal-insulator transition (MIT) are strongly mediated by Joule heating effects in a phase coexisting temperature range. Moreover, we find that the electrically and thermally triggered MIT behavior can be closely related with the alternate occurrence of current-induced multiple insulating and metallic phase coexistence in the nanobeam. These findings indicate that the current density passing through VO2 plays a critical role in both the electrical and structural phase transitions.
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Affiliation(s)
- Jung Inn Sohn
- Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
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44
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Vardi N, Anouchi E, Yamin T, Middey S, Kareev M, Chakhalian J, Dubi Y, Sharoni A. Ramp-Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1605029. [PMID: 28332323 DOI: 10.1002/adma.201605029] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2016] [Revised: 02/02/2017] [Indexed: 06/06/2023]
Abstract
Transition metal oxides are complex electronic systems that exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3 , which undergo a metal-insulator phase transition (MIT), the origin of which is still under debate. Here this study reports the discovery of a memory effect in both systems, manifested through an increase of resistance at a specific temperature, which is set by reversing the temperature ramp from heating to cooling during the MIT. The characteristics of this ramp-reversal memory effect do not coincide with any previously reported history or memory effects in manganites, electron-glass or magnetic systems. From a broad range of experimental features, supported by theoretical modelling, it is found that the main ingredients for the effect to arise are the spatial phase separation of metallic and insulating regions during the MIT and the coupling of lattice strain to the local transition temperature of the phase transition. We conclude that the emergent memory effect originates from phase boundaries at the reversal temperature leaving "scars" in the underlying lattice structure, giving rise to a local increase in the transition temperature. The universality and robustness of the effect shed new light on the MIT in complex oxides.
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Affiliation(s)
- Naor Vardi
- Department of Physics, Bar Ilan University, Ramat-Gan, IL, 5290002, Israel
- Bar-Ilan Institute of Nanotechnology and Advanced Materials, Ramat-Gan, IL, 5290002, Israel
| | - Elihu Anouchi
- Department of Physics, Bar Ilan University, Ramat-Gan, IL, 5290002, Israel
- Bar-Ilan Institute of Nanotechnology and Advanced Materials, Ramat-Gan, IL, 5290002, Israel
| | - Tony Yamin
- Department of Physics, Bar Ilan University, Ramat-Gan, IL, 5290002, Israel
- Bar-Ilan Institute of Nanotechnology and Advanced Materials, Ramat-Gan, IL, 5290002, Israel
| | - Srimanta Middey
- Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Michael Kareev
- Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Jak Chakhalian
- Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Yonatan Dubi
- Department of Chemistry, Ben Gurion University, Be'er Sheva, IL, 841050, Israel
- Ilse-Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Be'er Sheva, IL, 8410501, Israel
| | - Amos Sharoni
- Department of Physics, Bar Ilan University, Ramat-Gan, IL, 5290002, Israel
- Bar-Ilan Institute of Nanotechnology and Advanced Materials, Ramat-Gan, IL, 5290002, Israel
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45
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Yang J, Ran Q, Wei D, Sun T, Yu L, Song X, Pu L, Shi H, Du C. Three-dimensional conformal graphene microstructure for flexible and highly sensitive electronic skin. NANOTECHNOLOGY 2017; 28:115501. [PMID: 28140339 DOI: 10.1088/1361-6528/aa5b56] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate a highly stretchable electronic skin (E-skin) based on the facile combination of microstructured graphene nanowalls (GNWs) and a polydimethylsiloxane (PDMS) substrate. The microstructure of the GNWs was endowed by conformally growing them on the unpolished silicon wafer without the aid of nanofabrication technology. Then a stamping transfer method was used to replicate the micropattern of the unpolished silicon wafer. Due to the large contact interface between the 3D graphene network and the PDMS, this type of E-skin worked under a stretching ratio of nearly 100%, and showed excellent mechanical strength and high sensitivity, with a change in relative resistance of up to 6500% and a gauge factor of 65.9 at 99.64% strain. Furthermore, the E-skin exhibited an obvious highly sensitive response to joint movement, eye movement and sound vibration, demonstrating broad potential applications in healthcare, body monitoring and wearable devices.
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Affiliation(s)
- Jun Yang
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China. University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
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46
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Hong SC, Lee M, Kim D. The Optical Behavior of VO 2Film Modulated by the Morphology and Preferred Growing Axis. B KOREAN CHEM SOC 2017. [DOI: 10.1002/bkcs.11052] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Seong-Cheol Hong
- Department of Chemistry; Pukyong National University; Busan 48513 Republic of Korea
| | - Myeongsoon Lee
- Department of Chemistry; Pukyong National University; Busan 48513 Republic of Korea
| | - Don Kim
- Department of Chemistry; Pukyong National University; Busan 48513 Republic of Korea
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47
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Liu M, Sternbach AJ, Basov DN. Nanoscale electrodynamics of strongly correlated quantum materials. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2017; 80:014501. [PMID: 27811387 DOI: 10.1088/0034-4885/80/1/014501] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Electronic, magnetic, and structural phase inhomogeneities are ubiquitous in strongly correlated quantum materials. The characteristic length scales of the phase inhomogeneities can range from atomic to mesoscopic, depending on their microscopic origins as well as various sample dependent factors. Therefore, progress with the understanding of correlated phenomena critically depends on the experimental techniques suitable to provide appropriate spatial resolution. This requirement is difficult to meet for some of the most informative methods in condensed matter physics, including infrared and optical spectroscopy. Yet, recent developments in near-field optics and imaging enabled a detailed characterization of the electromagnetic response with a spatial resolution down to 10 nm. Thus it is now feasible to exploit at the nanoscale well-established capabilities of optical methods for characterization of electronic processes and lattice dynamics in diverse classes of correlated quantum systems. This review offers a concise description of the state-of-the-art near-field techniques applied to prototypical correlated quantum materials. We also discuss complementary microscopic and spectroscopic methods which reveal important mesoscopic dynamics of quantum materials at different energy scales.
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Affiliation(s)
- Mengkun Liu
- Department of Physics, Stony Brook University, Stony Brook, NY 11794, USA
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48
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Jo YR, Kim MW, Kim BJ. Direct correlation of structural and electrical properties of electron-doped individual VO 2 nanowires on devised TEM grids. NANOTECHNOLOGY 2016; 27:435704. [PMID: 27658734 DOI: 10.1088/0957-4484/27/43/435704] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Nano-scale VO2 wires with controlled parameters such as electron-doping have attracted intense interest due to their capability of suppressing the temperature of the metal-insulator transition (MIT). However, because their diameters are smaller than the spatial resolutions of the conventional measuring equipment, the ability to perform a thorough examination of the wires has been hindered. Here, we report the fabrication of a transmission electron microscopy (TEM) grid with an optimum design of Si3N4 windows on which the photolithography for individual electron-doped VO2 nanowire devices can be safely accomplished, allowing the cross-examination of the structural and electrical properties. TEM dark-field imaging was used to quantitatively investigate the fractions of rutile and M1 phases, and their lattice alignments were observed using high-resolution TEM (HRTEM) with small area diffraction. Moreover, electron energy loss spectroscopy (EELS) revealed that the rutile domain would be created by the strain induced by oxygen vacancies. Importantly, we successfully tuned the transition temperature by changing the rutile fraction while maintaining a high level of resistivity change. The resistivity at room temperature linearly decreased with the rutile fraction, following a simple model. Furthermore, the T dependence of the threshold voltage can be attributed to the Joule heating, exhibiting an identical thermal dependence, irrespective of the rutile fraction.
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Affiliation(s)
- Y-R Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, Korea
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49
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Li Z, Guo Y, Hu Z, Su J, Zhao J, Wu J, Wu J, Zhao Y, Wu C, Xie Y. Hydrogen Treatment for Superparamagnetic VO2
Nanowires with Large Room-Temperature Magnetoresistance. Angew Chem Int Ed Engl 2016. [DOI: 10.1002/ange.201603406] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Zejun Li
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Zhenpeng Hu
- School of Physics; Nankai University; Tianjin 300071 P.R. China
| | - Jihu Su
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Jiyin Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Junchi Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Jiajing Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Yingcheng Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials; University of Science & Technology of China; Hefei 230026 P.R. China
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50
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Li Z, Guo Y, Hu Z, Su J, Zhao J, Wu J, Wu J, Zhao Y, Wu C, Xie Y. Hydrogen Treatment for Superparamagnetic VO2 Nanowires with Large Room-Temperature Magnetoresistance. Angew Chem Int Ed Engl 2016; 55:8018-22. [PMID: 27265205 DOI: 10.1002/anie.201603406] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2016] [Indexed: 11/11/2022]
Abstract
One-dimensional (1D) transition metal oxide (TMO) nanostructures are actively pursued in spintronic devices owing to their nontrivial d electron magnetism and confined electron transport pathways. However, for TMOs, the realization of 1D structures with long-range magnetic order to achieve a sensitive magnetoelectric response near room temperature has been a longstanding challenge. Herein, we exploit a chemical hydric effect to regulate the spin structure of 1D V-V atomic chains in monoclinic VO2 nanowires. Hydrogen treatment introduced V(3+) (3d(2) ) ions into the 1D zigzag V-V chains, triggering the formation of ferromagnetically coupled V(3+) -V(4+) dimers to produce 1D superparamagnetic chains and achieve large room-temperature negative magnetoresistance (-23.9 %, 300 K, 0.5 T). This approach offers new opportunities to regulate the spin structure of 1D nanostructures to control the intrinsic magnetoelectric properties of spintronic materials.
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Affiliation(s)
- Zejun Li
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Zhenpeng Hu
- School of Physics, Nankai University, Tianjin, 300071, P.R. China
| | - Jihu Su
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Jiyin Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Junchi Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Jiajing Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Yingcheng Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China.
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, 230026, P.R. China
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