Facile synthesis of germanium nanocrystals and their application in organic-inorganic hybrid photodetectors

Mixed-ligand-functionalized silicon-germanium alloy nanocrystals with improved carrier mobilities

Silicon-germanium (SiGe) alloy nanocrystals (NCs) are promising for advanced optoelectronic applications due to their highly tunable composition and photophysical behaviors. The homogenous dispersion of Si and Ge atoms on the surfaces of SiGe NCs adds a degree of freedom for manipulating the surface chemistry of this type of alloy material. However, the difference in the reactivity between Si and Ge atoms brings additional difficulty in selecting appropriate surface ligands to passivate SiGe NCs. Here we report a mixed-ligand functionalization approach to passivate SiGe NCs effectively. Octadecene and oleylamine molecules serve as co-ligands to cap the surface Si and Ge atoms, respectively, yielding colloidally stable SiGe NCs with high solution dispersity and stable intrinsic near-infrared emission with a microsecond-scale lifetime decay. The resulting particles also show improved hole and electron mobilities of up to 1.1 × 10-6 cm2 V-1 s-1 and 6.3 × 10-6 cm2 V-1 s-1, 2.2 and 1.2 times improvement over the particles only passivated by octadecene ligands.

Low-Temperature PECVD Growth of Germanium for Mode-Locking of Er-Doped Fiber Laser

A low-temperature plasma-enhanced chemical vapor deposition grown germanium (Ge) thin-film is employed as a nonlinear saturable absorber (SA). This Ge SA can passively mode-lock the erbium-doped fiber laser (EDFL) for soliton generation at a central wavelength of 1600 nm. The lift-off and transfer of the Ge film synthesized upon the SiO₂/Si substrate are performed by buffered oxide etching and direct imprinting. The Ge film with a thickness of 200 nm exhibits its Raman peak at 297 cm⁻¹, which both the nanocrystalline and polycrystalline Ge phases contribute to. In addition, the Ge thin-film is somewhat oxidized but still provides two primary crystal phases at the (111) and (311) orientations with corresponding diffraction ring radii of 0.317 and 0.173 nm, respectively. The nanocrystalline structure at (111) orientation with a corresponding d-spacing of 0.319 nm is also observed. The linear and nonlinear transmittances of the Ge thin-film are measured to show its self-amplitude modulation coefficient of 0.016. This is better than nano-scale charcoal and carbon-black SA particles for initiating the mode-locking at the first stage. After the Ge-based saturable absorber into the L-band EDFL system without using any polarized components, the narrowest pulsewidth and broadest linewidth of the soliton pulse are determined as 654.4 fs and 4.2 nm, respectively, with a corresponding time–bandwidth product of 0.32 under high pumping conditions.

Single-Crystalline Germanium Nanocrystals via a Two-Step Microwave-Assisted Colloidal Synthesis from GeI4

Colloidal germanium (Ge) nanocrystals (NCs) are of great interest with possible applications for photovoltaics and near-IR detectors. In many examples of colloidal reactions, Ge(II) precursors are employed, and NCs of diameter ∼3-10 nm have been prepared. Herein, we employed a two-step microwave-assisted reduction of GeI₄ in oleylamine (OAm) to prepare monodispersed Ge NCs with a size of 18.9 ± 1.84 nm. More importantly, the as-synthesized Ge NCs showed high crystallinity with single-crystal nature as indicated by powder X-ray diffraction, selected area electron diffraction, and high-resolution transmission electron microscopy. The Tauc plot derived from photothermal deflection spectroscopy measurement on Ge NCs thin films shows a decreased bandgap of the Ge NCs obtained from GeI₄ compared with that of the Ge NCs from GeI₂ with a similar particle size, indicating a higher crystallinity of the samples prepared with the two-step reaction from GeI₄. The calculated Urbach energy indicates less disorder in the larger NCs. This disorder might correlate with the fraction of surface states associated with decreased particle size or with the increased molar ratio of ligands to germanium. Solutions involved in this two-step reaction were investigated with ¹H NMR spectroscopy and high-resolution mass spectrometry (MS). One possible reaction pathway is proposed to unveil the details of the reaction involving GeI₄ and OAm. Overall, this two-step synthesis produces high-quality Ge NCs and provides new insight on nanoparticle synthesis of covalently bonding semiconductors.

Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review

Herein, we aim to evaluate the photodetector performance of various nanostructured materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet (UV), visible, and infrared (IR) regions. Specifically, semiconductor-based metal oxides such as ZnO, Ga₂O₃, SnO₂, TiO₂, and WO₃ are the majority preferred materials for UV photodetection due to their broad band gap, stability, and relatively simple fabrication processes. Whereas, the graphene-based hetero- and nano-structured composites are considered as prominent visible light active photodetectors. Interestingly, graphene exhibits broad band spectral absorption and ultra-high mobility, which derives graphene as a suitable candidate for visible detector. Further, due to the very low absorption rate of graphene (2%), various materials have been integrated with graphene (rGO-CZS, PQD-rGO, N-SLG, and GO doped PbI₂). In the case of IR photodetectors, quantum dot IR detectors prevails significant advantage over the quantum well IR detectors due to the 0-D quantum confinement and ability to absorb the light with any polarization. In such a way, we discussed the most recent developments on IR detectors using InAs and PbS quantum dot nanostructures. Overall, this review gives clear view on the development of suitable device architecture under prominent nanostructures to tune the photodetector performance from UV to IR spectral regions for wide-band photodetectors.

Based on Ultrathin PEDOT:PSS/c-Ge Solar Cells Design and Their Photoelectric Performance

In recent years, nanostructures have improved the performance of solar cells and are regarded as the most promising microstructures. The optical properties of PEDOT:PSS/c-Ge hybrid solar cells (HSCs) based on the octagon germanium nanoparticles (O-GNPs) were numerically analyzed using the finite-difference time-domain (FDTD) method. The optimal structure of the hybrid solar cell is determined by changing the thickness of the organic layer and structural parameters of nanoparticles to enhance the optical absorption and eventually achieve high broadband absorption. By changing the structure parameter of O-GNPs, we studied its effect on solar cells. The optimization of geometric parameters is based on maximum absorption. The light absorption of our optimized HSCs is basically above 90% between 200 and 1500 nm. PEDOT:PSS is placed on top of O-GNPs to transmit the holes better, allowing O-GNPs to capture a lot of photons, to increase absorbance value properties in the AM1.5 solar spectral irradiated region. The transmittance is increased by adding poly-methyl methacrylate (PMMA). At the same time, the electrical characteristics of Ge solar cells were simulated by DEVICE, and short-circuit current (Jsc), open-circuit voltage (Voc), maximum power (Pmax), filling coefficient (FF) and photoelectric conversion efficiency (PCE) were obtained. According to the optimization results after adjusting the structural parameters, the maximum short-circuit current is 44.32 mA/cm2; PCE is 7.84 mW/cm2; FF is 69%. The results show that the O-GNPs have a good light trapping effect, and the structure design has great potential for the absorption of HSCs; it is believed that the conversion efficiency will be further improved through further research.

Advanced Nanoporous Anodic Alumina-Based Optical Sensors for Biomedical Applications

Close-packed hexagonal array nanopores are widely used both in research and industry. A self-ordered nanoporous structure makes anodic aluminum oxide (AAO) one of the most popular nanomaterials. This paper describes the main formation mechanisms for AAO, the AAO fabrication process, and optical sensor applications. The paper is focused on four types of AAO-based optical biosensor technology: surface-Enhanced Raman Scattering (SERS), surface Plasmon Resonance (SPR), reflectometric Interference Spectroscopy (RIfS), and photoluminescence Spectroscopy (PL). AAO-based optical biosensors feature very good selectivity, specificity, and reusability.

Structural Insights on Microwave-Synthesized Antimony-Doped Germanium Nanocrystals

Doped and alloyed germanium nanocrystals (Ge NCs) are potential candidates for a variety of applications such as photovoltaics and near IR detectors. Recently, bismuth (Bi) as an n-type group 15 element was shown to be successfully and kinetically doped into Ge NCs through a microwave-assisted solution-based synthesis, although Bi is thermodynamically insoluble in bulk crystalline Ge. To expand the composition manipulation of Ge NCs, another more common n-type group 15 element for semiconductors, antimony (Sb), is investigated. Oleylamine (OAm)- and OAm/trioctylphosphine (TOP)-capped Sb-doped Ge NCs have been synthesized by the microwave-assisted solution reaction of GeI2 with SbI3. Passivating the Ge surface with a binary ligand system of OAm/TOP results in formation of consistently larger NCs compared to OAm alone. The TOP coordination on the Ge surface is confirmed by 31P NMR and SEM-EDS. The lattice parameter of Ge NCs increases with increasing Sb concentration (0.00-2.0 mol %), consistent with incorporation of Sb. An increase in the NC diameter with higher content of SbI3 in the reaction is shown by TEM. XPS and EDS confirm the presence of Sb before and after removal of surface ligands with hydrazine and recapping the Ge NC surface with dodecanethiol (DDT). EXAFS analysis suggests that Sb resides within the NCs on highly distorted sites next to a Ge vacancy as well as on the crystallite surface. High Urbach energies obtained from photothermal deflection spectroscopy (PDS) of the films prepared from pristine Ge NC and Sb-doped Ge NCs indicate high levels of disorder, in agreement with EXAFS data. Electrical measurements on TiO2-NC electron- and hole-only devices show an increase in hole conduction, suggesting that the Sb-vacancy defects are behaving as a p-type dopant in the Ge NCs, consistent with the vacancy model derived from the EXAFS results.

Germanium Crystalline Nanomaterials for Li-Ion Storage Prepared by Decomposing LiZnGe in Air

Germanium nanomaterials are important for their potential applications in many fields. However, current synthetic technologies usually involve either high-cost explosive reagents or complicated facilities, which make the mass production especially challenging. In this report, a method was developed to synthesize nano-Ge materials conveniently, realized by decomposing LiZnGe in air at room temperature. The process is nontoxic, inexpensive, and, most of all, very suitable for large-scale production in combination with ball milling. The as-prepared Ge nanomaterials are crystalline whose structures can be flexibly tuned through the ball milling syntheses. As the lithium-ion battery anode, such Ge nanomaterials exhibited long-term cycle ability with high specific capacity as well as excellent rate performance. These results not only provided a very efficient way to prepare nano-Ge in lab or even promising industry production but also suggested a universal method in synthesizing the tetrels elemental nanomaterials.

Morphological and Surface-State Challenges in Ge Nanoparticle Applications

The intrinsic properties of Ge in tandem with advances in its nanostructuring have resulted in its increased attention in a variety of fields as an alternative to traditional group 12-14 and 14-16 nanoparticles (NPs). The small band gap and size-dependent development of the optical properties in tandem with their good charge transport properties make Ge NPs a suitable material for optoelectronic devices. The low toxicity of Ge, together with its IR photoluminescence (PL) that overlaps with desirable biological optical windows used for tissue imaging, allows the exploitation of these materials in the field of bioimaging and as drug carriers. In addition, the ability of germanium to both exhibit high mechanical stability in its NP form and alloy with lithium and sodium metals has led to it being a highly attractive material for next-generation lithium ion and beyond-lithium batteries. While it is attracting considerable attention in a variety of areas, research on Ge NPs is still relatively nascent. Fundamental aspects of this material, such as its Bohr radius and the origin of different observed PLs, are still under debate. Moreover, the ability to produce Ge NPs with controlled dimensions and morphology is not yet as mature as for other classes of nanomaterials. In this review, the mechanisms and origins of these properties will be introduced, which we then relate to specific applications presented in the literature.

Dehydrocoupling - an alternative approach to functionalizing germanium nanoparticle surfaces

Surface functionalization is an essential aspect of nanoparticle design and preparation; it can impart stability, processability, functionality, as well as tailor optoelectronic properties that facilitate future applications. Herein we report a new approach toward modifying germanium nanoparticle (GeNP) surfaces and for the first time tether alkyl chains to the NP surfaces through Si-Ge bonds. This was achieved via heteronuclear dehydrocoupling reactions involving alkylsilanes and Ge-H moieties on the NP surfaces. The resulting solution processable RR'2Si-GeNPs (R = octadecyl or PDMS; R' = H or CH3) were characterized using FTIR, Raman, 1H-NMR, XRD, TEM, HAADF, and EELS and were found to retain the crystallinity of the parent GeNP platform.

Recent advances in solution-processed photodetectors based on inorganic and hybrid photo-active materials

Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.

Crystallinity and Size Control of Colloidal Germanium Nanoparticles from Organogermanium Halide Reagents

Germanium (Ge) nanoparticles are gaining increasing interest due to their properties that arise in the quantum confinement regime, such as the development of the band structure with changing size. While promising materials, significant challenges still exist related to the development of synthetic schemes allowing for good control over size and morphology in a single step. Herein, we investigate a synthetic method that combines sulfur and primary amines to promote the reduction of organometallic Ge(IV) precursors to form Ge nanoparticles at relatively low temperatures (300 °C). We propose a reaction mechanism and examine the effects of solvents, sulfur concentration, and organogermanium halide precursors. Hydrosulfuric acid (H₂S) produced in situ acts as the primary reducing species, and we were able to increase the particle size more than 2-fold by tuning both the reaction time and quantity of sulfur added during the synthesis. We found that we are able to control the crystalline or amorphous nature of the resulting nanoparticles by choosing different solvents and propose a mechanism for this interaction. The reaction mechanism presented provides insight into how one can control the resulting particle size, crystallinity, and reaction kinetics. While we demonstrated the synthesis of Ge nanoparticles, this method can potentially be extended to other members of the group IV family.

Synthesis of germanium-platinum nanoparticles as high-performance catalysts for spray-deposited large-area dye-sensitized solar cells (DSSC) and the hydrogen evolution reaction (HER)

GePt3 and Ge2Pt nanoparticles were synthesized via a solution colloidal method as catalysts for dye-sensitized solar cells (DSSC) and the hydrogen evolution reaction (HER). The shape, size, arrangement, phases and crystalline structures of Ge-Pt nanoparticles were determined, and the ability to be dispersed in nonpolar solvents enabled them to form a catalyst ink with a stable ejection for the spray coating technique. A series of electrochemical analyses confirmed the catalytic properties of Ge-Pt nanoparticles toward the I-/I3- redox reaction system. The DSSC using GePt3 nanoparticles as the counter electrode exhibited excellent power conversion efficiency (PCE) of 8.04% at 0.16 cm2, which was comparable to that of a DSSC using Pt as the counter electrode (8.0%); it also exhibited an average PCE of 7.26% even at a large working area (2 cm2). In addition, the GePt3 catalyst exhibited excellent HER electrocatalytic performance with a large current density and a low Tafel slope, and it could stably operate at a working area of up to 5 cm2 with a low over potential (<0.06 V) to achieve 10 mA cm-2 cathodic current. This study provides fundamental insights into the preparation of germanium-platinum intermetallic compound catalysts at the nanoscale, which can be beneficial for the design and development of clean energy devices.

Fast and safe synthesis of micron germanium in an ammonia atmosphere using Mo2N as catalyst

Here, we reported a new method for fast and safe synthesis of a micron germanium (Ge) semiconductor. The Ge was successfully prepared from mixed GeO₂ with a low amount of MoO₃ by the NH₃ reduction method at 800 °C for an ultra-short time of 10 min. XRD patterns show that the Ge has a tetragonal structure. SEM images show that the size of the Ge particles is from 5 μm to 10 μm, and so it is on the micron scale. UV-visible diffuse reflectance spectroscopy shows that the Ge has good light absorption both in the ultraviolet and visible regions. The formation of Ge mainly goes through a two-step conversion in the NH₃ flow. Firstly, GeO₂ is converted to Ge₃N₄, and then Ge₃N₄ is decomposed to generate Ge. The comparison experiments of MoO₃ and Mo₂N demonstrate that Mo₂N is the catalyst for the Ge synthesis which improves the Ge₃N₄ decomposition. The presented fast and safe synthesis method of Ge has great potential for industrialization and the proposed Mo₂N boosting the Ge₃N₄ decomposition has provided significant guidance for other nitride decomposition systems.

Here, we reported a new method for fast and safe synthesis of a micron germanium (Ge) semiconductor.

Germanium quantum dot/nitrogen-doped graphene nanocomposite for high-performance bulk heterojunction solar cells

This study presents the successful synthesis of a novel nanocomposite, namely a germanium quantum dot/nitrogen-doped graphene nanocomposite (GeQD/NGr), and its use in the modification of the photoactive medium of bulk heterojunction solar cells (BHJ-SCs). The nanocomposite was prepared in two sequential steps. Firstly, a reduced graphene oxide-germanium oxide nanocomposite (rGO-GeO₂) was synthesized by microwave-assisted solvothermal reaction. The second step involved simultaneous N-doping of graphene and reduction of GeO₂ to obtain the GeQD/NGr nanocomposite by thermal treatment. The nanocomposite consists of highly crystalline, spherical shaped GeQDs with a mean diameter of 4.4 nm affixed on the basal planes of NGr sheets. Poly-3-hexylthiophene (P3HT), (6-6)phenyl-C60-butyric acid methyl ester (PCBM) and GeQD/NGr were used as the photoactive layer blend in the fabrication of BHJ-SCs. Enhanced short-circuit current density (J_sc) and fill factor (FF) is derived from the incorporation of the GeQD/NGr nanocomposite in the active layer. The nanocomposite in the active layer blend serves to ensure effective charge separation and transportation to the respective electrodes. Consequently, an improvement of up to 183% in the power conversion efficiency is achieved in the BHJ-SCs by the GeQD/NGr modification.

Germanium quantum dot/nitrogen-doped graphene, a novel nanocomposite, is successfully synthesized and utilized in the photoactive medium of organic solar cells.

Ultrathin Broadband Germanium-Graphene Hybrid Photodetector with High Performance

Germanium-based photodetector is a key component in silicon based photonics because of its unique properties of response at telecommunication band and compatibility with CMOS techniques. However, the limitations of low quantum efficiency and high surface recombination in ultrathin germanium film, especially in the near-infrared range, put huge obstructions on the road toward applications. Nowadays, practical applications require more nanoscale devices with lower power consumption as well as higher responsivity and response speed. In this work, we first demonstrate a germanium-graphene hybrid structure photodetector that consists of an ultrathin 20 nm germanium layer and a monolayer graphene. The photodetector can achieve a broadband detection from ultraviolet to near-infrared range. A conductive gain of 155 and a responsivity of 66.2 A W^-1 are achieved, which is about 3 orders of magnitude higher than pure graphene photodetectors and about 4 times larger than pure germanium photodetectors. Such enhancement owes to effective generation, separation and transfer of photogenerated carriers at material interface. The photodetector based on germanium--graphene hybrid structure presents a new paradigm for the realization of small but high performance device in the process of integration in silicon-based optical chips. And it offers new opportunities for imaging, sensing, and other optoelectronic field applications.

Novel Visible-Light Photodetector Based on Two-Dimensional Confined Electron Donor-Acceptor Co-Assembled Layered Double Hydroxide Ultrathin Films

Photodetectors are a class of critical optoelectronic devices that can transform incident light into a detectable electrical signal. In this work, we develop a novel photodetector based on two-dimensional (2D) confined electron donor-acceptor co-assembled ultrathin films (UTFs). The (PCDTBT@CN-PPV/LDHs) _n UTFs are composed of an organic electron donor, poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT), and an acceptor, poly(5-(2-ethylhexyloxy)-2-methoxy-cyanoterephthalylidene) (CN-PPV), within inorganic Mg₂Al-layered double hydroxides (LDHs). The UTFs exhibit broad-range visible-light absorption, from 400 to 650 nm, resulting from complementary absorption of PCDTBT and CN-PPV. The fluorescence emission of the UTFs is completely quenched, implying the occurrence of photoinduced charge transfer (PCT). As a novel photodetector, the co-assembled UTFs have a high photocurrent and on/off switching ratio (300 nA/∼120), in contrast to those of the PCDTBT/CN-PPV drop-casting thin film (5.4 nA/∼1.6); a fast response; a short recovery time (lower than 0.1 s); and excellent wavelength and light-intensity dependence. The PCT mechanism can be attributed to the formation of a 2D bulk heterojunction of the two polymers within the interlayers of the LDH nanosheets. Furthermore, flexible UTFs on polyethylene terephthalate substrates are also fabricated, which exhibit excellent folding strength and electrical stability.

An organic-inorganic broadband photodetector based on a single polyaniline nanowire doped with quantum dots

The capability to detect light over a broad waveband is highly important for practical optoelectronic applications and has been achieved with photodetectors of one-dimensional inorganic nanomaterials such as Si, ZnO, and GaN. However, achieving high speed responsivity over an entire waveband within such a photodetector remains a challenge. Here we demonstrate a broadband photodetector using a single polyaniline nanowire doped with quantum dots that is highly responsive over a broadband from 350 to 700 nm. The high responsivity is due to the high density of trapping states at the enormous interfaces between polyaniline and quantum dots. The interface trapping can effectively reduce the recombination rate and enhance the efficiency for light detection. Furthermore, a tunable spectral range can be achieved by size-based spectral tuning of quantum dots. The use of organic-inorganic hybrid polyaniline nanowires in broadband photodetection may offer novel functionalities in optoelectronic devices and circuits.

Flexible Photodetectors Based on 1D Inorganic Nanostructures

Flexible photodetectors with excellent flexibility, high mechanical stability and good detectivity, have attracted great research interest in recent years. 1D inorganic nanostructures provide a number of opportunities and capabilities for use in flexible photodetectors as they have unique geometry, good transparency, outstanding mechanical flexibility, and excellent electronic/optoelectronic properties. This article offers a comprehensive review of several types of flexible photodetectors based on 1D nanostructures from the past ten years, including flexible ultraviolet, visible, and infrared photodetectors. High-performance organic-inorganic hybrid photodetectors, as well as devices with 1D nanowire (NW) arrays, are also reviewed. Finally, new concepts of flexible photodetectors including piezophototronic, stretchable and self-powered photodetectors are examined to showcase the future research in this exciting field.

Sacrificial Silver Nanoparticles: Reducing GeI2 To Form Hollow Germanium Nanoparticles by Electroless Deposition

Herein we report the electroless deposition of Ge onto sacrificial Ag nanoparticle (NP) templates to form hollow Ge NPs. The formation of AgI is a necessary component for this reaction. Through a systematic study of surface passivating ligands, we determined that tri-n-octylphosphine is necessary to facilitate the formation of hollow Ge NPs by acting as a transport agent for GeI2 and the oxidized Ag(+) cation (i.e., AgI product). Annular dark-field (ADF) scanning transmission electron microscopy (STEM) imaging of incomplete reactions revealed Ag/Ge core/shell NPs; in contrast, completed reactions displayed hollow Ge NPs with pinholes which is consistent with the known method for dissolution of the nanotemplate. Characterization of the hollow Ge NPs was performed by transmission electron microscopy, ADF-STEM, energy-dispersive X-ray spectroscopy, UV-vis spectrophotometry, and Raman spectroscopy. The galvanic replacement reaction of Ag with GeI2 offers a versatile method for controlling the structure of Ge nanomaterials.

Nanostructured Photodetectors: From Ultraviolet to Terahertz

Inspired by nanoscience and nanoengineering, numerous nanostructured materials developed by multidisciplinary approaches exhibit excellent photoelectronic properties ranging from ultraviolet to terahertz frequencies. As a new class of building block, nanoscale elements in terms of quantum dots, nanowires, and nanolayers can be used for fabricating photodetectors with high performance. Moreover, in conjunction with traditional photodetectors, they exhibit appealing performance for practical applications including high density of integration, high sensitivity, fast response, and multifunction. Therefore, with the perspective of photodetectors constructed by diverse low-dimensional nanostructured materials, recent advances in nanoscale photodetectors are discussed here; meanwhile, challenges and promising future directions in this research field are proposed.

Growth kinetics of colloidal Ge nanocrystals for light harvesters

Representation of growth kinetics mechanisms that strongly control synthesis and final dimension of colloidal nanocrystals.

Poly(3,4-ethylenedioxythiophene)/germanium organic–inorganic hybrid thin films: substrate-induced synthesis, enhanced photoelectrochemical and photocatalytic properties

We demonstrate here a facile synthesis of 3D PEDOT nano-flowers/Ge nanoparticles organic–inorganic hybrid films with enhanced photoelectrochemical and photocatalytic performance.

Ag-NP@Ge-nanotaper/Si-micropillar ordered arrays as ultrasensitive and uniform surface enhanced Raman scattering substrates

Surface-enhanced Raman scattering (SERS) is considered to be an excellent candidate for analytical detection schemes, because of its molecular specificity, rapid response and high sensitivity. Here, SERS-substrates of Ag-nanoparticle (Ag-NP) decorated Ge-nanotapers grafted on hexagonally ordered Si-micropillar (denoted as Ag-NP@Ge-nanotaper/Si-micropillar) arrays are fabricated via a combinatorial process of two-step etching to achieve hexagonal Si-micropillar arrays, chemical vapor deposition of flocky Ge-nanotapers on each Si-micropillar and decoration of Ag-NPs onto the Ge-nanotapers through galvanic displacement. With high density three-dimensional (3D) "hot spots" created from the large quantities of the neighboring Ag-NPs and large-scale uniform morphology, the hierarchical Ag-NP@Ge-nanotaper/Si-micropillar arrays exhibit strong and reproducible SERS activity. Using our hierarchical 3D SERS-substrates, both methyl parathion (a commonly used pesticide) and PCB-2 (one congener of highly toxic polychlorinated biphenyls) with concentrations down to 10(-7) M and 10(-5) M have been detected respectively, showing great potential in SERS-based rapid trace-level detection of toxic organic pollutants in the environment.

Germanium nanocrystals as luminescent probes for rapid, sensitive and label-free detection of Fe3+ ions

Luminescent water-soluble germanium nanocrystals (Ge NCs) have been developed as a fluorescent sensing platform for the highly selective and sensitive detection of Fe3+ via quenching of their strong blue luminescence, without the need for analyte-specific labelling groups. The amine-terminated Ge NCs were separated into two discrete size fractions with average diameters of 3.9±0.4 nm and 6.8±1.8 nm using centrifugation. The smaller 3.9 nm NCs possessed a strong blue luminescence, with an average lifetime of 6.1 ns and a quantum yield (QY) of 21.5%, which is strongly influenced by solution pH. In contrast, 6.8 nm NCs exhibited a green luminescence with a longer lifetime of 7.8 ns and lower QY (6.2%) that is insensitive to pH. Sensitive detection of Fe3+ was successfully demonstrated, with a linear relationship between luminescence quenching and Fe3+ concentration observed from 0-800 μM, with a limit of detection of 0.83 μM. The Ge NCs show excellent selectivity toward Fe3+ ions, with no quenching of the fluorescence signal induced by the presence of Fe2+ ions, allowing for solution phase discrimination between ions of the same element with different formal charges. The luminescence quenching mechanism was confirmed by static and time-resolved photoluminescence spectroscopies, while the applicability for this assay for detection of Fe3+ in real water samples was successfully demonstrated.

Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer

The performance of photodetectors is judged via high responsivity, fast speed of response, and low background current. Many previously reported photodetectors based on size-tuned colloidal quantum dots (CQDs) have relied either on photodiodes, which, since they are primary photocarrier devices, lack gain; or photoconductors, which provide gain but at the expense of slow response (due to delayed charge carrier escape from sensitizing centers) and an inherent dark current vs responsivity trade-off. Here we report a photojunction field-effect transistor (photoJFET), which provides gain while breaking prior photoconductors' response/speed/dark current trade-off. This is achieved by ensuring that, in the dark, the channel is fully depleted due to a rectifying junction between a deep-work-function transparent conductive top contact (MoO3) and a moderately n-type CQD film (iodine treated PbS CQDs). We characterize the rectifying behavior of the junction and the linearity of the channel characteristics under illumination, and we observe a 10 μs rise time, a record for a gain-providing, low-dark-current CQD photodetector. We prove, using an analytical model validated using experimental measurements, that for a given response time the device provides a two-orders-of-magnitude improvement in photocurrent-to-dark-current ratio compared to photoconductors. The photoJFET, which relies on a junction gate-effect, enriches the growing family of CQD photosensitive transistors.

From rational design of organometallic precursors to optimized synthesis of core/shell Ge/GeO2 nanoparticles

The synthesis conditions of germanium-based nanoparticles have been drastically softened thanks to the design of a suitable precursor featuring enhanced reactivity.

Ag-nanoparticle-decorated Ge nanocap arrays protruding from porous anodic aluminum oxide as sensitive and reproducible surface-enhanced Raman scattering substrates

We report on the fabrication of Ag nanoparticle (Ag NP) decorated germanium (Ge) nanocap (Ag-NPs@Ge-nanocap) arrays protruding from highly ordered porous anodic aluminum oxide (AAO) template as highly sensitive and uniform surface-enhanced Raman scattering (SERS) substrates. The hybrid SERS substrates are fabricated via a combinatorial process of AAO template-assisted growth of Ge nanotubes with each tube having a hemispherical nanocap on the AAO pore bottom, wet chemical etching of the remaining aluminum and the AAO barrier layer to expose the Ge nanocaps, and sputtering Ag NPs on the Ge nanocap arrays. Because sufficient SERS "hot spots" are created from the electromagnetic coupling among the Ag NPs on the Ge nanocap and the highly ordered Ge nanocap arrays also have semiconducting chemical supporting enhancement, the hybrid SERS substrates have high SERS sensitivity and good signal reproducibility. Using the hybrid SERS substrates, Rhodamine 6G with a concentration down to 10(-11) M is identified, and one congener of highly toxic polychlorinated biphenyls with a concentration as low as 10(-6) M is also recognized, showing great potential for SERS-based rapid detection of organic pollutants in the environment.

High-performance hybrid phenyl-C61-butyric acid methyl ester/Cd(3)P(2) nanowire ultraviolet-visible-near infrared photodetectors

In this work, single-crystalline p-type Cd3P2 nanowires (NWs) were synthesized on a Cd sheet via a facile chemical vapor deposition method. Then field-effect transistors and high-performance photodetectors were fabricated based on these NWs. It was found that hole mobility of a pristine Cd3P2 NW is around 2.94 cm(2) V(-1) s(-1). Meanwhile, high responsivity and photoconductive gain were observed on these devices across a broad spectral range covering UV-visible to NIR with high stability and reproducibility. Furthermore, hybrid organic-inorganic n-type phenyl-C61-butyric acid methyl ester (PCBM) and p-type Cd3P2 NW heterojunction photodetectors were also fabricated, exhibiting much improved photocurrent and photoconductive gain, as compared to the device made of pristine Cd3P2 NWs. Intriguingly, the flexible hybrid photodetectors have been fabricated on plastic substrates and characterized under various bending conditions, demonstrating their excellent flexibility and robustness. The high performance and flexibility of the hybrid photodetectors are promising for further applications requiring large-area, high-sensitivity, and high-speed photodetectors with broad-spectrum photoresponse.

ZnO(N)-Spiro-MeOTAD hybrid photodiode: an efficient self-powered fast-response UV (visible) photosensor

Organic-inorganic hybrid photo-detectors with a self-sufficient mode of operation represent a research area of great current interest. In most efficient photodetectors and optoelectronic devices compound semiconductors containing toxic elements such as Cd, As, Te, S, Se etc. are used and these are also expensive. Hence there is also a rapidly growing interest in replacing these with environmentally friendly and earth-abundant materials. Herein, we report a facile solution-processed fabrication of a self-powered organic-inorganic hybrid photodetector using n-type oriented ZnO nanorods and p-type Spiro-MeOTAD semiconductor. ZnO is eco-friendly and earth-abundant, and Spiro-MeOTAD is non-hazardous. We show that the latter has far less toxicity than the toxic elements stated above. This visible blind UV photodetector shows high sensitivity (10(2)) and a UV/visible rejection ratio of 300. It also exhibits fast response times of τ(rise) ~ 200 μs and τ(fall) ~ 950 μs. Importantly, with a small modification of nitrogen incorporation in ZnO one can also realize a highly-sensitive self-powered visible light photodetector with at least 1000% (or higher) improvements in quality factors (photocurrent/sensitivity/response time) as compared to previously reported organic-inorganic hybrid photo-detectors based on metal-chalcogenides (CdS-PANI or CuInSe2-P3HT). Interestingly, the broadband sensitivity of such N:ZnO-Spiro-MeOTAD photodiode enables sensing of low intensity (~28 μW cm(-2)) ambient white light with a high photocurrent density of 120 nA cm(-2) making it an efficient ambient white light detector.

Topological structural transformations of nanoparticle self-assemblies mediated by phase transfer and their application as organic-inorganic hybrid photodetectors

Nanoparticle (NP) self-assemblies have attracted an increasing amount of attention in recent years because of their potential application in the construction of novel nanodevices. The controllable transformation of NP self-assemblies (NPS) between a polar and nonpolar environment is required for many specific applications because of their different properties in different environments. In this article, water-soluble luminescent CdS/CdTe NPS were synthesized using thioglycolic acid as a capping agent. The stiff and straight NPS bundles became loose after phase transfer from an aqueous to an organic phase. Subsequently, the NPS transferred to the aqueous phase. The loose structure transformed into many twisted nanoribbons. Additionally, hybrid photodetectors made using the organic-soluble NPS and P3HT polymers were fabricated, and we found that the NPS/P3HT blend may be perfect for light detection. The organic-soluble NPS are potentially useful for the fabrication of semiconductor nanojunctions.

A high-sensitivity near-infrared phototransistor based on an organic bulk heterojunction

High-gain photodetectors with near-infrared (NIR) sensitivity are critical for biomedical applications such as photoplethysmography and optical coherence tomography where detected optical signals are relatively weak. Current photodetection technologies rely on avalanche photodiodes and photomultipliers to achieve high sensitivity. These devices, however, require a high operation voltage and are not compatible with CMOS based read-out circuits (ROCs). In this work we demonstrate a solution-proceeded NIR phototransistor structure based on a bulk heterojunction (BHJ) of a narrow bandgap polymer, poly(N-alkyl diketopyrrolo-pyrrole dithienylthieno[3,2-b]thiophene) (DPP-DTT), and [6,6]-phenyl-C61-butyric acid methylester (PCBM). The device exhibits ultrahigh responsivity (∼5 × 10(5) A W(-1)) as well as wide tunability (>1 × 10(4)) of photoconductive gain. Using the current-voltage and transient photocurrent measurements we show that the high responsivity is due to the combined effects of fast transport of holes in the polymer matrix and slow detrapping of electrons from the isolated PCBM domains. The wide gain tunability and the efficient suppression of noise current are achieved through the use of the optically tunable gate terminal. We demonstrate that our phototransistor can be used as the detection unit in a photoplethysmography sensor for non-invasive, continuous finger pulse wave monitoring. The high-sensitivity of the phototransistor allows the use of a low-power light source, thus reducing the overall power consumption of the sensor. This, together with the solution processibility and the simple device configuration (which is compatible with conventional ROCs), make the phototransistor a very promising component for the next generation low-cost, mobile biomedical devices for health monitoring and remote diagnostics.

Organic light detectors: photodiodes and phototransistors

While organic electronics is mostly dominated by light-emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on virtually every substrate, which might enable innovative optoelectronic systems to be targeted for instance in the field of imaging, optical communications or biomedical sensing. In this review, after a brief resume of photogeneration basics and of devices operation mechanisms, we offer a broad overview of recent progress in the field, focusing on photodiodes and phototransistors. As to the former device category, very interesting values for figures of merit such as photoconversion efficiency, speed and minimum detectable signal level have been attained, and even though the simultaneous optimization of all these relevant parameters is demonstrated in a limited number of papers, real applications are within reach for this technology, as it is testified by the increasing number of realizations going beyond the single-device level and tackling more complex optoelectronic systems. As to phototransistors, a more recent subject of study in the framework of organic electronics, despite a broad distribution in the reported performances, best photoresponsivities outperform amorphous silicon-based devices. This suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto-electronic switch and memory.

Anisotropic photoresponse properties of single micrometer-sized GeSe nanosheet

Micrometer-sized single-crystal GeSe nanosheets have been synthesized by a solution method. The single GeSe nanosheet exhibits novel anisotropic photoresponse properties in two photodetectors based on individual nanosheet. The on/off switching ratio of the photodetector perpendicular to the nanosheet is 3.5 times higher than that parallel to the nanosheet.

Hybridization of inorganic nanoparticles and polymers to create regular and reversible self-assembly architectures

Inorganic nanoparticles (NPs) with diversified functionalities are promising candidates in future optoelectronic and biomedical applications, which greatly depend on the capability to arrange NPs into higher-order architectures in a controllable way. This issue is considered to be solved by means of self-assembly. NPs can participate in self-assembly in different manners, such as smart self-organization with blended molecules, as the carriers of host molecules for assembly and disassembly with guest molecules, as netpoints to endow the architectures specific functionalities, and so forth. To enhance the structural stability of the as-prepared assembly architectures, polymers have been utilized to create NP-polymer composites. Meanwhile, such a strategy also demonstrates the possibility of integrating the functionalities of NPs and/or polymers by forming regular architectures. The emerging interest in the current optoelectronic and biological areas strongly demands intelligent nanocomposites, which are produced by combination of the excellent functionalities of NPs and the responsiveness of polymers. On the basis of the recent progress in fabricating NP-polymer composites, this critical review summarizes the development of new methods for fabricating regular self-assembly architectures, highlights the reversible assembly and disassembly behavior, and indicates the potential applications.

Zn2GeO4 and In2Ge2O7 nanowire mats based ultraviolet photodetectors on rigid and flexible substrates

Ternary metal oxide, Zn2GeO4, In2Ge2O7, have potential applications in many research areas. Using a single chemical vapor deposition method, high-quality single crystalline Zn2GeO4 nanowire (NW) mats and In2Ge2O7 NW mats were synthesized on a large scale. Nanowires mats based ultraviolet photodetectors were fabricated on rigid silicon substrates. By simply transferring the nanowire mats to a transparent adhesive PET tape, flexible photodetectors were also fabricated. Both the rigid and flexible photodetectors exhibited excellent photoconductive performance in terms of high sensitivity to the UV light, excellent stability and reproducibility, and fast response and recovery time.