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Bui PT, Van On V, Guerrero-Sanchez J, Hoat DM. Electronic and magnetic properties of GeS monolayer effected by point defects and doping. RSC Adv 2024; 14:2481-2490. [PMID: 38223692 PMCID: PMC10785223 DOI: 10.1039/d3ra07942b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Accepted: 12/15/2023] [Indexed: 01/16/2024] Open
Abstract
In this work, defect engineering and doping are proposed to effectively functionalize a germanium sulfide (GeS) mononolayer. With a buckled hexagonal structure, the good dynamical and thermal stability of the GeS monolayer is confirmed. PBE(HSE06)-based calculations assert the indirect gap semiconductor nature of this two-dimensional (2D) material with a relatively large band gap of 2.48(3.28) eV. The creation of a single Ge vacancy magnetizes the monolayer with a total magnetic moment of 1.99 μB, creating a the feature-rich half-metallic nature. VaS vacancy, VaGeS divacancy, SGe and GeS antisites preserve the non-magnetic nature; however, they induce considerable band gap reduction of the order 47.98%, 89.11%, 29.84%, and 62.5%, respectively. By doping with transition metals (TMs), large total magnetic moments of 3.00, 4.00, and 5.00 μB are obtained with V, Cr-Fe, and Mn impurities, respectively. The 3d orbital of TM dopants mainly regulates the electronic and magnetic properties, which induces either the half-metallic or diluted magnetic semiconductor nature. It is found that the doping site plays a determinant role in the case of doping with VA-group atoms (P and As). The GeS monolayer can be metallized by doping the Ge sublattice, meanwhile both spin states exhibit semiconductor character with strong spin polarization upon doping the S sublattice to obtain a diluted magnetic semiconductor nature with a total magnetic moment of 1.00 μB. In these cases, the magnetism originates mainly from P and As impurities. The obtained results suggest an efficient approach to functionalize the GeS monolayer for optoelectronic and spintronic applications.
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Affiliation(s)
- Phuong Thuy Bui
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
- Faculty of Pharmacy, Duy Tan University Da Nang 550000 Vietnam
| | - Vo Van On
- Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University Binh Duong Province Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
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2
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Ye K, Yan J, Liu L, Li P, Yu Z, Gao Y, Yang M, Huang H, Nie A, Shu Y, Xiang J, Wang S, Liu Z. Broadband Polarization-Sensitive Photodetection of Magnetic Semiconducting MnTe Nanoribbons. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300246. [PMID: 37013460 DOI: 10.1002/smll.202300246] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 02/27/2023] [Indexed: 06/19/2023]
Abstract
2D materials with low symmetry are explored in recent years because of their anisotropic advantage in polarization-sensitive photodetection. Herein the controllably grown hexagonal magnetic semiconducting α-MnTe nanoribbons are reported with a highly anisotropic (100) surface and their high sensitivity to polarization in a broadband photodetection, whereas the hexagonal structure is highly symmetric. The outstanding photoresponse of α-MnTe nanoribbons occurs in a broadband range from ultraviolet (UV, 360 nm) to near infrared (NIR, 914 nm) with short response times of 46 ms (rise) and 37 ms (fall), excellent environmental stability, and repeatability. Furthermore, due to highly anisotropic (100) surface, the α-MnTe nanoribbons as photodetector exhibit attractive sensitivity to polarization and high dichroic ratios of up to 2.8 under light illumination of UV-to-NIR wavelengths. These results demonstrate that 2D magnetic semiconducting α-MnTe nanoribbons provide a promising platform to design the next-generation polarization-sensitive photodetectors in a broadband range.
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Affiliation(s)
- Kun Ye
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, P. R. China
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Junxin Yan
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Lixuan Liu
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin, 300387, P. R. China
| | - Penghui Li
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Zhipeng Yu
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Yang Gao
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, P. R. China
| | - Mengmeng Yang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, P. R. China
| | - He Huang
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Anmin Nie
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Yu Shu
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Jianyong Xiang
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Shouguo Wang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, P. R. China
| | - Zhongyuan Liu
- Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
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Zheng JD, Zhao YF, Hu H, Shen YH, Tan YF, Tong WY, Xiang PH, Zhong N, Yue FY, Duan CG. Ferroelectric control of pseudospin texture in CuInP 2S 6monolayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:204001. [PMID: 35193130 DOI: 10.1088/1361-648x/ac577d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Accepted: 02/22/2022] [Indexed: 06/14/2023]
Abstract
Spin-orbit coupling (SOC) plays an important role in condensed matter physics and has potential applications in spintronics devices. In this paper, we study the electronic properties of ferroelectric CuInP2S6(CIPS) monolayer through first-principles calculations. The result shows that CIPS monolayer is a potential for valleytronics material and we find that the in-plane helical and nonhelical pseudospin texture are induced by the Rashba and Dresselhaus effect, respectively. The chirality of helical pseudospin texture is coupled to the out-of-plane ferroelectric polarization. Furthermore, a large spin splitting due to the SOC effect can be found atKvalley, which can be regarded as the Zeeman effect under a valley-dependent pseudomagnetic field. The CIPS monolayer with Rashbaet aleffects provides a good platform for electrically controlled spin polarization physics.
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Affiliation(s)
- Jun-Ding Zheng
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Yi-Feng Zhao
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - He Hu
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Yu-Hao Shen
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Yi-Fan Tan
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Wen-Yi Tong
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Fang-Yu Yue
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
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Safarov VI, Rozhansky IV, Zhou Z, Xu B, Wei Z, Wang ZG, Lu Y, Jaffrès H, Drouhin HJ. Recombination Time Mismatch and Spin Dependent Photocurrent at a Ferromagnetic-Metal-Semiconductor Tunnel Junction. PHYSICAL REVIEW LETTERS 2022; 128:057701. [PMID: 35179915 DOI: 10.1103/physrevlett.128.057701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2021] [Accepted: 12/14/2021] [Indexed: 06/14/2023]
Abstract
We report on carrier dynamics in a spin photodiode based on a ferromagnetic-metal-GaAs tunnel junction. We show that the helicity-dependent current is determined not only by the electron spin polarization and spin asymmetry of the tunneling but in great part by a dynamical factor resulting from the competition between tunneling and recombination in the semiconductor, as well as by a specific quantity: the charge polarization of the photocurrent. The two latter factors can be efficiently controlled through an electrical bias. Under longitudinal magnetic field, we observe a strong increase of the signal arising from inverted Hanle effect, which is a fingerprint of its spin origin. Our approach represents a radical shift in the physical description of this family of emerging spin devices.
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Affiliation(s)
- Viatcheslav I Safarov
- LSI, École Polytechnique, CEA/DRF/IRAMIS, CNRS, Institut Polytechnique de Paris, 91128 Palaiseau, France
| | - Igor V Rozhansky
- LSI, École Polytechnique, CEA/DRF/IRAMIS, CNRS, Institut Polytechnique de Paris, 91128 Palaiseau, France
- Ioffe Institute, St. Petersburg 194021, Russia
| | - Ziqi Zhou
- Institut Jean Lamour, Université de Lorraine, CNRS UMR7198, Campus ARTEM, 2, allée André Guinier, BP 50840, 54011 Nancy, France
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Bo Xu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Zhan-Guo Wang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuan Lu
- Institut Jean Lamour, Université de Lorraine, CNRS UMR7198, Campus ARTEM, 2, allée André Guinier, BP 50840, 54011 Nancy, France
| | - Henri Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Université Paris Saclay, 91767 Palaiseau, France
| | - Henri-Jean Drouhin
- LSI, École Polytechnique, CEA/DRF/IRAMIS, CNRS, Institut Polytechnique de Paris, 91128 Palaiseau, France
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5
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Cheng X, Cheng Z, Wang C, Li M, Gu P, Yang S, Li Y, Watanabe K, Taniguchi T, Ji W, Dai L. Light helicity detector based on 2D magnetic semiconductor CrI 3. Nat Commun 2021; 12:6874. [PMID: 34824280 PMCID: PMC8617301 DOI: 10.1038/s41467-021-27218-3] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2021] [Accepted: 11/06/2021] [Indexed: 11/09/2022] Open
Abstract
Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI3-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI3 devices. The devices exhibit clear helicity-selective photoresponse behavior determined by the magnetic state of CrI3. We also find abnormal negative photocurrents at higher bias in both monolayer and multilayer CrI3. A possible explanation is proposed for this phenomenon. Our work reveals the interplay between magnetic and optoelectronic properties in CrI3 and paves the way to developing spin-optoelectronic devices.
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Affiliation(s)
- Xing Cheng
- State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Zhixuan Cheng
- State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Minglai Li
- State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Pingfan Gu
- State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Shiqi Yang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yanping Li
- State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Lun Dai
- State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing, 100871, China.
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6
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Nishizawa N, Munekata H. Lateral-Type Spin-Photonics Devices: Development and Applications. MICROMACHINES 2021; 12:mi12060644. [PMID: 34072992 PMCID: PMC8226829 DOI: 10.3390/mi12060644] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Revised: 05/22/2021] [Accepted: 05/29/2021] [Indexed: 11/13/2022]
Abstract
Spin-photonic devices, represented by spin-polarized light emitting diodes and spin-polarized photodiodes, have great potential for practical use in circularly polarized light (CPL) applications. Focusing on the lateral-type spin-photonic devices that can exchange CPL through their side facets, this review describes their functions in practical CPL applications in terms of: (1) Compactness and integrability, (2) stand-alone (monolithic) nature, (3) room temperature operation, (4) emission with high circular polarization, (5) polarization controllability, and (6) CPL detection. Furthermore, it introduces proposed CPL applications in a wide variety of fields and describes the application of these devices in biological diagnosis using CPL scattering. Finally, it discusses the current state of spin-photonic devices and their applications and future prospects.
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7
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Zhou B. Ferroelectric Rashba semiconductors, AgBiP 2X 6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices. NANOSCALE 2020; 12:5533-5542. [PMID: 32091050 DOI: 10.1039/c9nr10865c] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The electric and nonvolatile control of spin in semiconductors represents a fundamental step towards novel electronic devices. In this work, using first-principles calculations we investigate the electronic properties of AgBiP2X6 (X = S, Se, and Te) monolayers, which may be a new member of ferroelectric Rashba semiconductors due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the electric control of spin. The AgBiP2X6 monolayers are dynamically and thermodynamically stable up to room temperature. In the AgBiP2Te6 monolayer, the calculated band structure reveals the direct band-gap semiconducting nature in the presence of highly mobile two-dimensional electron gas near the Fermi level. The inclusion of spin-orbit coupling yields the giant Rashba-type spin splitting with a Rashba parameter of 6.5 eV Å, which is even comparable to that of some known bulk Rashba semiconductors. Except for the Rashba-type spin splitting, spin-orbit coupling together with inversion symmetry breaking also gives rise to valley polarization located at the edge of the conduction bands. The strength of the Rashba-type spin splitting and location of the conduction band minimum can be significantly tuned by applying the in-plane biaxial strain. Also, we demonstrate that these remarkable features can be retained in the presence of the BN substrate. The coexistence of the Rashba-type spin splitting (in-plane spin direction) and band splitting at the K/K' valleys (out-of-plane spin direction) makes the AgBiP2Te6 monolayer interesting for spintronics and valleytronics.
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Affiliation(s)
- Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
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8
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De Cesari S, Bergamaschini R, Vitiello E, Giorgioni A, Pezzoli F. Optically reconfigurable polarized emission in Germanium. Sci Rep 2018; 8:11119. [PMID: 30042405 PMCID: PMC6058013 DOI: 10.1038/s41598-018-29409-3] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2018] [Accepted: 07/10/2018] [Indexed: 11/09/2022] Open
Abstract
Light polarization can conveniently encode information. Yet, the ability to tailor polarized optical fields is notably demanding but crucial to develop practical methods for data encryption and to gather fundamental insights into light-matter interactions. Here we demonstrate the dynamic manipulation of the chirality of light at telecom wavelengths. This unique possibility is enrooted in the multivalley nature of the conduction band of a conventional semiconductor, namely Ge. In particular, we demonstrate that optical pumping suffices to govern the kinetics of spin-polarized carriers and eventually the chirality of the radiative recombination. We found that the polarized component of the emission can be remarkably swept through orthogonal eigenstates without magnetic field control or phase shifter coupling. Our results provide insights into spin-dependent phenomena and offer guiding information for the future selection and design of spin-enhanced photonic functionalities of group IV semiconductors.
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Affiliation(s)
- Sebastiano De Cesari
- LNESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 55, I-20125, Milano, Italy
| | - Roberto Bergamaschini
- LNESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 55, I-20125, Milano, Italy
| | - Elisa Vitiello
- LNESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 55, I-20125, Milano, Italy
| | - Anna Giorgioni
- LNESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 55, I-20125, Milano, Italy
| | - Fabio Pezzoli
- LNESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 55, I-20125, Milano, Italy.
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Rinaldi C, Varotto S, Asa M, Sławińska J, Fujii J, Vinai G, Cecchi S, Di Sante D, Calarco R, Vobornik I, Panaccione G, Picozzi S, Bertacco R. Ferroelectric Control of the Spin Texture in GeTe. NANO LETTERS 2018; 18:2751-2758. [PMID: 29380606 PMCID: PMC6994063 DOI: 10.1021/acs.nanolett.7b04829] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2017] [Revised: 01/20/2018] [Indexed: 05/27/2023]
Abstract
The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands. Furthermore, we demonstrate the crafting of nonvolatile ferroelectric patterns in GeTe films at the nanoscale by using the conductive tip of an atomic force microscope. Based on the intimate link between ferroelectric polarization and spin in GeTe, ferroelectric patterning paves the way to the investigation of devices with engineered spin configurations.
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Affiliation(s)
- Christian Rinaldi
- Department
of Physics, Politecnico di Milano, 20133 Milano, Italy
- IFN-CNR,
Politecnico di Milano, 20133 Milano, Italy
| | - Sara Varotto
- Department
of Physics, Politecnico di Milano, 20133 Milano, Italy
| | - Marco Asa
- Department
of Physics, Politecnico di Milano, 20133 Milano, Italy
| | - Jagoda Sławińska
- Consiglio
Nazionale delle Ricerche CNR-SPIN, Sede
Temporanea di Chieti, c/o Univ. “G. D’Annunzio”, 66100 Chieti, Italy
| | - Jun Fujii
- CNR-IOM, Laboratorio TASC in Area Science
Park - Basovizza, 34149 Trieste, Italy
| | - Giovanni Vinai
- CNR-IOM, Laboratorio TASC in Area Science
Park - Basovizza, 34149 Trieste, Italy
| | - Stefano Cecchi
- Paul-Drude-Institut
für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Domenico Di Sante
- Institut
für Theoretische Physik und Astrophysik, Universität
Würzburg, Am Hubland
Campus Süd, Würzburg 97074, Germany
| | - Raffaella Calarco
- Paul-Drude-Institut
für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Ivana Vobornik
- CNR-IOM, Laboratorio TASC in Area Science
Park - Basovizza, 34149 Trieste, Italy
| | - Giancarlo Panaccione
- CNR-IOM, Laboratorio TASC in Area Science
Park - Basovizza, 34149 Trieste, Italy
| | - Silvia Picozzi
- Consiglio
Nazionale delle Ricerche CNR-SPIN, Sede
Temporanea di Chieti, c/o Univ. “G. D’Annunzio”, 66100 Chieti, Italy
| | - Riccardo Bertacco
- Department
of Physics, Politecnico di Milano, 20133 Milano, Italy
- IFN-CNR,
Politecnico di Milano, 20133 Milano, Italy
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11
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Chen JY, Wong TM, Chang CW, Dong CY, Chen YF. Self-polarized spin-nanolasers. NATURE NANOTECHNOLOGY 2014; 9:845-850. [PMID: 25240673 DOI: 10.1038/nnano.2014.195] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2014] [Accepted: 08/11/2014] [Indexed: 06/03/2023]
Abstract
Besides adding a new functionality to conventional lasers, spin-polarized lasers can, potentially, offer lower threshold currents and reach higher emission intensities. However, to achieve spin-polarized lasing emission a material should possess a slow spin relaxation and a high propensity to be injected with spin-polarized currents. These are stringent requirements that, so far, have limited the choice of candidate materials for spin-lasers. Here we show that these requirements can be relaxed by using a new self-polarized spin mechanism. Fe3O4 nanoparticles are coupled to GaN nanorods to form an energy-band structure that induces the selective charge transfer of electrons with opposite spins. In turn, this selection mechanism generates the population imbalance between spin-up and spin-down electrons in the emitter's energy levels without an external bias. Using this principle, we demonstrate laser emission from GaN nanorods with spin polarization up to 28.2% at room temperature under a low magnetic field of 0.35 T. As the spin-selection mechanism relies entirely on the relative energy-band alignment between the iron oxide nanoparticles and the emitter and requires neither optical pumping with circularly polarized light nor electrical pumping with magnetic electrodes, potentially a wide range of semiconductors can be used as spin-nanolasers.
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Affiliation(s)
- Ju-Ying Chen
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Tong-Ming Wong
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Che-Wei Chang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Chen-Yuan Dong
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
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12
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Ikeda H, Nishizawa N, Nishibayashi K, Munekata H. Circularly polarized light detector based on ferromagnet/semiconductor junctions. ACTA ACUST UNITED AC 2014. [DOI: 10.3379/msjmag.1402r016] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2022]
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13
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Demonstration of the spin solar cell and spin photodiode effect. Nat Commun 2013; 4:2068. [PMID: 23820766 PMCID: PMC3715846 DOI: 10.1038/ncomms3068] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/14/2013] [Accepted: 05/26/2013] [Indexed: 11/08/2022] Open
Abstract
Spin injection and extraction are at the core of semiconductor spintronics. Electrical injection is one method of choice for the creation of a sizeable spin polarization in a semiconductor, requiring especially tailored tunnel or Schottky barriers. Alternatively, optical orientation can be used to generate spins in semiconductors with significant spin-orbit interaction, if optical selection rules are obeyed, typically by using circularly polarized light at a well-defined wavelength. Here we introduce a novel concept for spin injection/extraction that combines the principle of a solar cell with the creation of spin accumulation. We demonstrate that efficient optical spin injection can be achieved with unpolarized light by illuminating a p-n junction where the p-type region consists of a ferromagnet. The discovered mechanism opens the window for the optical generation of a sizeable spin accumulation also in semiconductors without direct band gap such as Si or Ge.
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