1
|
Li Y, Hu D, Sun J, Zhang W, Jiang A. Ferroelectric Domain Wall Delayer and Low-Dropout Regulator. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19691-19698. [PMID: 38563689 DOI: 10.1021/acsami.3c18979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
A switching-type power converter providing an accurate and stable switching output voltage against line/load variations and power supply ripple is mostly complicated in system-on-chip power management integrated circuits (PMICs) within a limited occupation area. Here we fabricated domain wall (DW) nanodevices using an X-cut LiNbO3 thin film on silicon. The domain switching event occurs after a delay time predicted by Merz's law under the applied voltage. But the output current is irrespective of the applied voltage and can be adjusted by conducting wall width as well as input resistance in the circuit. The regulating currents appear repetitively across the volatile interfacial domains between the nanodevice and electrode under intermittently applied voltages. A wall-current-limited domain switching model is developed to explain the phenomenon. The multifunctional DW nanodevices with smaller occupation areas can serve as compact low-dropout regulators in PMICs, time-domain delayers in energy-efficient neural network systems, and on-chip electrostatic discharge protection besides nonvolatile memories and selectors.
Collapse
Affiliation(s)
- Yiming Li
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Di Hu
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jie Sun
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Wendi Zhang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Anquan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| |
Collapse
|
2
|
Huang Q, Yang J, Chen Z, Chen Y, Cabral MJ, Luo H, Li F, Zhang S, Li Y, Xie Z, Huang H, Mai YW, Ringer SP, Liu S, Liao X. Formation of Head/Tail-to-Body Charged Domain Walls by Mechanical Stress. ACS APPLIED MATERIALS & INTERFACES 2023; 15:2313-2318. [PMID: 36534513 DOI: 10.1021/acsami.2c14598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Domain walls (DWs) in ferroelectric materials are interfaces that separate domains with different polarizations. Charged domain walls (CDWs) and neutral domain walls are commonly classified depending on the charge state at the DWs. CDWs are particularly attractive as they are configurable elements, which can enhance field susceptibility and enable functionalities such as conductance control. However, it is difficult to achieve CDWs in practice. Here, we demonstrate that applying mechanical stress is a robust and reproducible approach to generate CDWs. By mechanical compression, CDWs with a head/tail-to-body configuration were introduced in ultrathin BaTiO3, which was revealed by in-situ transmission electron microscopy. Finite element analysis shows strong strain fluctuation in ultrathin BaTiO3 under compressive mechanical stress. Molecular dynamics simulations suggest that the strain fluctuation is a critical factor in forming CDWs. This study provides insight into ferroelectric DWs and opens a pathway to creating CDWs in ferroelectric materials.
Collapse
Affiliation(s)
- Qianwei Huang
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| | - Jiyuan Yang
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang310024, China
| | - Zibin Chen
- Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong, China
| | - Yujie Chen
- School of Mechanical Engineering, The University of Adelaide, Adelaide, South Australia5005, Australia
| | - Matthew J Cabral
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| | - Haosu Luo
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, China
| | - Fei Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an710049, China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales2522, Australia
| | - Yulan Li
- Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, Washington99352, United States
| | - Zonghan Xie
- School of Mechanical Engineering, The University of Adelaide, Adelaide, South Australia5005, Australia
| | - Houbing Huang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing100081, China
| | - Yiu-Wing Mai
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| | - Simon P Ringer
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang310024, China
| | - Xiaozhou Liao
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales2006, Australia
| |
Collapse
|
3
|
Alikin D, Turygin A, Ushakov A, Kosobokov M, Alikin Y, Hu Q, Liu X, Xu Z, Wei X, Shur V. Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3912. [PMID: 36364688 PMCID: PMC9659027 DOI: 10.3390/nano12213912] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 10/31/2022] [Accepted: 11/02/2022] [Indexed: 06/16/2023]
Abstract
The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced. In ferroelectric-ferroelastic materials, two types of domain walls are possible: pure ferroelectric and ferroelastic-ferroelectric. In this paper, we demonstrated a strategy to control the selective ferroelectric or ferroelastic domain wall formation in the (111) single-domain rhombohedral PMN-PT single crystals at the nanoscale by varying the relative humidity level in a scanning probe microscopy chamber. The solution of the corresponding coupled electro-mechanical boundary problem allows explaining observed competition between ferroelastic and ferroelectric domain growth. The reduction in the ferroelastic domain density during local switching at elevated humidity has been attributed to changes in the electric field spatial distribution and screening effectiveness. The established mechanism is important because it reveals a kinetic nature of the final domain patterns in multiaxial materials and thus provides a general pathway to create desirable domain structure in ferroelectric materials for applications in piezoelectric and optical devices.
Collapse
Affiliation(s)
- Denis Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Anton Turygin
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Andrei Ushakov
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Mikhail Kosobokov
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Yurij Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Qingyuan Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
| | - Xin Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
| | - Zhuo Xu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
| | - Xiaoyong Wei
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
| | - Vladimir Shur
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| |
Collapse
|
4
|
Chen Z, Li F, Huang Q, Liu F, Wang F, Ringer SP, Luo H, Zhang S, Chen LQ, Liao X. Giant tuning of ferroelectricity in single crystals by thickness engineering. SCIENCE ADVANCES 2020; 6:6/42/eabc7156. [PMID: 33055166 PMCID: PMC7556833 DOI: 10.1126/sciadv.abc7156] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/11/2020] [Accepted: 08/28/2020] [Indexed: 06/11/2023]
Abstract
Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectricity in nanoscale materials induced by surface strain. We discovered that sample thickness plays a critical role in tailoring the domain switching behavior and ferroelectric properties of single-crystal ferroelectrics, arising from the huge surface strain and the resulting surface reconstruction. Our results provide important insights in tuning polarization/domain of single-crystal ferroelectric via sample thickness engineering.
Collapse
Affiliation(s)
- Zibin Chen
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia.
| | - Fei Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China
| | - Qianwei Huang
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia
| | - Fei Liu
- Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Feifei Wang
- Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Simon P Ringer
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia
| | - Haosu Luo
- Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, NSW 2522, Australia.
| | - Long-Qing Chen
- Materials Research Institute, Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Xiaozhou Liao
- School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia.
| |
Collapse
|
5
|
Langenberg E, Paik H, Smith EH, Nair HP, Hanke I, Ganschow S, Catalan G, Domingo N, Schlom DG. Strain-Engineered Ferroelastic Structures in PbTiO 3 Films and Their Control by Electric Fields. ACS APPLIED MATERIALS & INTERFACES 2020; 12:20691-20703. [PMID: 32292024 DOI: 10.1021/acsami.0c04381] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO3 thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. Under applied electric fields, these strain-engineered ferroelastic structures are highly malleable, especially when a/c and a1/a2 superdomains coexist. To reconfigure the ferroelastic structures and achieve self-assembled nanoscale-ordered morphologies, pure ferroelectric switching of individual c-domains within the a/c superdomains is essential. The stability, however, of the electrically written ferroelastic structures is in most cases ephemeral; the speed of the relaxation process depends sensitively on strain and thickness. Only under low tensile strain-as is the case for PbTiO3 on GdScO3-and below a critical thickness do the electrically created a/c superdomain structures become stable for days or longer, making them relevant for reconfigurable nanoscale electronics or nonvolatile electromechanical applications.
Collapse
Affiliation(s)
- Eric Langenberg
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Eva H Smith
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Hari P Nair
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Isabelle Hanke
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Steffen Ganschow
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Gustau Catalan
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Neus Domingo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
| |
Collapse
|
6
|
Kalinin SV, Kim Y, Fong DD, Morozovska AN. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036502. [PMID: 29368693 DOI: 10.1088/1361-6633/aa915a] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.
Collapse
Affiliation(s)
- Sergei V Kalinin
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | | | | | | |
Collapse
|
7
|
Jiang J, Bai ZL, Chen ZH, He L, Zhang DW, Zhang QH, Shi JA, Park MH, Scott JF, Hwang CS, Jiang AQ. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. NATURE MATERIALS 2018; 17:49-56. [PMID: 29180776 DOI: 10.1038/nmat5028] [Citation(s) in RCA: 68] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2017] [Accepted: 10/10/2017] [Indexed: 05/21/2023]
Abstract
Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.
Collapse
Affiliation(s)
- Jun Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zi Long Bai
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zhi Hui Chen
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Long He
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Qing Hua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jin An Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Min Hyuk Park
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| | - James F Scott
- Department of Physics, University of Cambridge, Cambridge CB3 0HE, UK
- Departments of Chemistry and Physics, St Andrews University, St Andrews KY16 9ST, UK
| | - Cheol Seong Hwang
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| | - An Quan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| |
Collapse
|
8
|
Sharma P, Zhang Q, Sando D, Lei CH, Liu Y, Li J, Nagarajan V, Seidel J. Nonvolatile ferroelectric domain wall memory. SCIENCE ADVANCES 2017; 3:e1700512. [PMID: 28691100 PMCID: PMC5482552 DOI: 10.1126/sciadv.1700512] [Citation(s) in RCA: 94] [Impact Index Per Article: 13.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2017] [Accepted: 05/05/2017] [Indexed: 05/23/2023]
Abstract
Ferroelectric domain walls are atomically sharp topological defects that separate regions of uniform polarization. The discovery of electrical conductivity in specific types of walls gave rise to "domain wall nanoelectronics," a technology in which the wall (rather than the domain) stores information. This paradigm shift critically hinges on precise nanoengineering of reconfigurable domain walls. Using specially designed nanofabricated electrodes and scanning probe techniques, we demonstrate a prototype nonvolatile ferroelectric domain wall memory, scalable to below 100 nm, whose binary state is defined by the existence or absence of conductive walls. The device can be read out nondestructively at moderate voltages (<3 V), exhibits relatively high OFF-ON ratios (~103) with excellent endurance and retention characteristics, and has multilevel data storage capacity. Our work thus constitutes an important step toward integrated nanoscale ferroelectric domain wall memory devices.
Collapse
Affiliation(s)
- Pankaj Sharma
- School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia
| | - Qi Zhang
- School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia
| | - Daniel Sando
- School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia
| | - Chi Hou Lei
- Department of Aerospace and Mechanical Engineering, Saint Louis University, St. Louis, MO 63103, USA
| | - Yunya Liu
- School of Materials Science and Engineering and Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Jiangyu Li
- Department of Mechanical Engineering, University of Washington, Seattle, WA 98195–2600, USA
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, China
| | - Valanoor Nagarajan
- School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales Australia, Sydney, New South Wales 2052, Australia
| |
Collapse
|
9
|
Evans DM, Alexe M, Schilling A, Kumar A, Sanchez D, Ortega N, Katiyar RS, Scott JF, Gregg JM. The nature of magnetoelectric coupling in Pb(Zr,Ti)O3 -Pb(Fe,Ta)O3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:6068-6073. [PMID: 26351267 DOI: 10.1002/adma.201501749] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2015] [Revised: 06/25/2015] [Indexed: 06/05/2023]
Abstract
The coupling between magnetization and polarization in a room temperature multiferroic (Pb(Zr,Ti)O3 -Pb(Fe,Ta)O3 ) is explored by monitoring the changes in capacitance that occur when a magnetic field is applied in each of three orthogonal directions. Magnetocapacitance effects, consistent with P(2) M(2) coupling, are strongest when fields are applied in the plane of the single crystal sheet investigated.
Collapse
Affiliation(s)
- Donald M Evans
- Centre for Nanostructured Media, School of Maths and Physics, Queen's University Belfast, Belfast BT7 1NN, Northern Ireland, UK
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Alina Schilling
- Centre for Nanostructured Media, School of Maths and Physics, Queen's University Belfast, Belfast BT7 1NN, Northern Ireland, UK
| | - Ashok Kumar
- National Physical Laboratory, New Delhi, Delhi, 110012, India
| | - Dilsom Sanchez
- Institute for Functional Nanomaterials, University of Puerto Rico, PO Box 23334, San Juan, PR, 00931-3334, USA
| | - Nora Ortega
- Institute for Functional Nanomaterials, University of Puerto Rico, PO Box 23334, San Juan, PR, 00931-3334, USA
| | - Ram S Katiyar
- Institute for Functional Nanomaterials, University of Puerto Rico, PO Box 23334, San Juan, PR, 00931-3334, USA
| | - James F Scott
- School of Chemistry, University of St Andrews, St Andrews, KY16 9ST, Scotland, UK
- School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS, Scotland, UK
| | - J Marty Gregg
- Centre for Nanostructured Media, School of Maths and Physics, Queen's University Belfast, Belfast BT7 1NN, Northern Ireland, UK
| |
Collapse
|
10
|
Quan Jiang A, Jian Meng X, Wei Zhang D, Hyuk Park M, Yoo S, Jin Kim Y, Scott JF, Seong Hwang C. Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong. Sci Rep 2015; 5:14618. [PMID: 26440528 PMCID: PMC4594126 DOI: 10.1038/srep14618] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2014] [Accepted: 09/02/2015] [Indexed: 11/09/2022] Open
Abstract
The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850 nm this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μm(-2), which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.
Collapse
Affiliation(s)
- An Quan Jiang
- State Key Laboratory of ASIC &System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xiang Jian Meng
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - David Wei Zhang
- State Key Laboratory of ASIC &System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Min Hyuk Park
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| | - Sijung Yoo
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| | - Yu Jin Kim
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| | - James F Scott
- School of Chemistry and School of Physics, St. Andrews Univ., St. Andrews, U.K. KY16 9ST
| | - Cheol Seong Hwang
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
| |
Collapse
|
11
|
Ferroelectric domain wall motion induced by polarized light. Nat Commun 2015; 6:6594. [PMID: 25779918 PMCID: PMC4382678 DOI: 10.1038/ncomms7594] [Citation(s) in RCA: 41] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2014] [Accepted: 02/10/2015] [Indexed: 11/09/2022] Open
Abstract
Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. Domain walls between ferroelectric domains are of interest for ferroelectric memory and to achieve a better control of the switching process. Here, the authors induce the motion of ferroelectric domains by light, creating a new possibility to control ferroelectrics.
Collapse
|
12
|
Guo EJ, Roth R, Herklotz A, Hesse D, Dörr K. Ferroelectric 180° domain wall motion controlled by biaxial strain. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:1615-1618. [PMID: 25594771 DOI: 10.1002/adma.201405205] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2014] [Revised: 12/15/2014] [Indexed: 06/04/2023]
Abstract
180° domain wall motion in a tetragonal ferroelectric oxide is accelerated by an order of magnitude using in situ strain in a force microscope. Single-domain PbZr0.2 Ti0.8 O3 films on piezoelectric (001)-oriented 0.72PbMg1/3 Nb2/3 O3 -0.28PbTiO3 substrates allow for direct investigation of strain-dependent domain dynamics. The strain effect depends on the sign of applied field through strain-dependent electrode built-in potentials and a suggested charging of tilted walls.
Collapse
Affiliation(s)
- Er-Jia Guo
- Institute for Physics, Martin-Luther-University, Halle-Wittenberg, 06099, Halle, Germany; Institute for Metallic Materials, IFW Dresden, Postfach 270116, 01069, Dresden, Germany
| | | | | | | | | |
Collapse
|
13
|
McQuaid RGP, Gruverman A, Scott JF, Gregg JM. Exploring vertex interactions in ferroelectric flux-closure domains. NANO LETTERS 2014; 14:4230-4237. [PMID: 25058751 DOI: 10.1021/nl5006788] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Using piezoresponse force microscopy, we have observed the progressive development of ferroelectric flux-closure domain structures and Landau-Kittel-type domain patterns, in 300 nm thick single-crystal BaTiO3 platelets. As the microstructural development proceeds, the rate of change of the domain configuration is seen to decrease exponentially. Nevertheless, domain wall velocities throughout are commensurate with creep processes in oxide ferroelectrics. Progressive screening of macroscopic destabilizing fields, primarily the surface-related depolarizing field, successfully describes the main features of the observed kinetics. Changes in the separation of domain-wall vertex junctions prompt a consideration that vertex-vertex interactions could be influencing the measured kinetics. However, the expected dynamic signatures associated with direct vertex-vertex interactions are not resolved. If present, our measurements confine the length scale for interaction between vertices to the order of a few hundred nanometers.
Collapse
Affiliation(s)
- Raymond G P McQuaid
- School of Mathematics and Physics, Queen's University Belfast , Belfast, BT7 1NN, U.K
| | | | | | | |
Collapse
|
14
|
Fan C, Zhu L, Liu T, Jiang B, Ma D, Qin J, Yang C. Using an Organic Molecule with Low Triplet Energy as a Host in a Highly Efficient Blue Electrophosphorescent Device. Angew Chem Int Ed Engl 2014. [DOI: 10.1002/ange.201308046] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
|
15
|
Fan C, Zhu L, Liu T, Jiang B, Ma D, Qin J, Yang C. Using an organic molecule with low triplet energy as a host in a highly efficient blue electrophosphorescent device. Angew Chem Int Ed Engl 2014; 53:2147-51. [PMID: 24449253 DOI: 10.1002/anie.201308046] [Citation(s) in RCA: 70] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2013] [Revised: 10/29/2013] [Indexed: 11/06/2022]
Abstract
To achieve high efficiencies in blue phosphorescent organic light-emitting diodes (PhOLEDs), the triplet energies (T1) of host materials are generally supposed to be higher than the blue phosphors. A small organic molecule with low singlet energy (S1) of 2.80 eV and triplet energy of 2.71 eV can be used as the host material for the blue phosphor, [bis(4,6-difluorophenylpyridinato-N,C(2'))iridium(III)] tetrakis(1-pyrazolyl)borate (FIr6; T1=2.73 eV). In both the photo- and electro-excited processes, the energy transfer from the host material to FIr6 was found to be efficient. In a three organic-layer device, the maximum current efficiency of 37 cd A(-1) and power efficiency of 40 Lm W(-1) were achieved for the FIr6-based blue PhOLEDs.
Collapse
Affiliation(s)
- Cong Fan
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072 (P.R. China)
| | | | | | | | | | | | | |
Collapse
|
16
|
Whyte JR, McQuaid RGP, Sharma P, Canalias C, Scott JF, Gruverman A, Gregg JM. Ferroelectric domain wall injection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:293-298. [PMID: 24136810 DOI: 10.1002/adma.201303567] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2013] [Indexed: 06/02/2023]
Abstract
Ferroelectric domain wall injection has been demonstrated by engineering of the local electric field, using focused ion beam milled defects in thin single crystal lamellae of KTiOPO4 (KTP). The electric field distribution (top) displays localized field hot-spots, which correlate with nucleation events (bottom). Designed local field variations can also dictate subsequent domain wall mobility, demonstrating a new paradigm in ferroelectric domain wall control.
Collapse
Affiliation(s)
- Jonathan R Whyte
- Centre for Nanostructured Media School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, United Kingdom
| | | | | | | | | | | | | |
Collapse
|