A high-performance room-temperature NO2 sensor based on an ultrathin heterojunction film

Strategic Design of Hemi-Isoindigo Polymer for a Highly Sensitive and Selective All-Printed Flexible Nitrogen Dioxide Chemiresistive Sensor

The study has developed two hemi-isoindigo (HID)-based polymers for printed flexible resistor-type nitrogen oxide (NO2) sensors: poly[2-ethylhexyl 3-((3'",4'-bis(dodecyloxy)-3,4-dimethoxy-[2,2':5',2'"-terthiophen]-5-yl)methylene)-2-oxoindoline-1-carboxylate] (P1) and poly[2-ethylhexyl 2-oxo-3-((3,3'",4,4'-tetrakis(dodecyloxy)-[2,2':5',2'"-terthiophen]-5-yl)methylene)indoline-1-carboxylate] (P2). These polymers feature thermally removable carbamate side chains on the HID units, providing solubility and creating molecular cavities after thermal annealing. These cavities enhance NO2 diffusion, and the liberated unsubstituted amide ─C(═O)NH─ groups readily form robust double hydrogen bonds (DHB), as demonstrated by computer simulations. Furthermore, both polymers possess elevated highest occupied molecular orbital (HOMO) energy levels of -4.74 and -4.77 eV, making them highly susceptible to p-doping by NO2. Gas sensors fabricated from P1 and P2 films, anneal under optimized conditions to partially remove carbamate side chains, exhibit remarkable sensitivities of +1400% ppm-1 and +3844% ppm-1, and low detection limit (LOD) values of 514 ppb and 38.9 ppb toward NO2, respectively. These sensors also demonstrate excellent selectivity for NO2 over other gases.

Tuning of Interfacial Charge Transport in Organic Heterostructures via Aryl Electrografting for Efficient Gas Sensors

Modulation of interfacial conductivity in organic heterostructures is a highly promising strategy to improve the performance of electronic devices. In this endeavor, the present work reports the fabrication of a bilayer heterojunction device, combining octafluoro copper phthalocyanine (CuF8Pc) and lutetium bis-phthalocyanine (LuPc2) and tunes the charge transport at the Cu(F8Pc)-(LuPc2) interface by aryl electrografting on the device electrode to improve the device NH3-sensing properties. Dimethoxybenzene (DMB) and tetrafluoro benzene (TFB) electrografted by an aryldiazonium electroreduction method form a few-nanometer-thick organic film on ITO. The conductivity of the heterojunction devices formed by coating a Cu(F8Pc)/LuPc2 bilayer over the aryl-grafted electrode strongly varies according to the electronic effects of the substituents in the aryl. Accordingly, DMB increases while TFB decreases the mobile charges accumulation at the Cu(F8Pc)-(LuPc2) interface. This is explained by the perfect alignment of the frontier molecular orbitals of DMB and Cu(F8Pc), facilitating charge injection into the Cu(F8Pc) layer. On the contrary, TFB behaves like a strong acceptor and reduces the mobile charges accumulation at the Cu(F8Pc)-(LuPc2) interface. Such interfacial conductivity variation influences the device NH3-sensing properties, which increase because of DMB grafting and decrease in the presence of TFB. DMB-based heterojunction devices contain four times higher active sites for NH3 adsorption and could detect NH3 down to 1 ppm with limited interference from humidity, making them suitable for real environment NH3 detection.

Synergism of Edge Effect and Interlayer Engineering of VS2 on CNFs for Rapid and Precise NO2 Detection

Although two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit attractive prospects for gas-sensing applications, the rapid and precise sensing of TMDs at low loss remains challenging. Herein, a NO2 sensor based on an expanded VS2 (VS2-E)/carbon nanofibers (CNFs) composite (abbreviated as VS2-E-C) with ultrafast response/recovery at a low-loss state is reported. In particular, the impact of the CNF content on the NO2-sensing performance of VS2-E-C was thoroughly explored. Expanded VS2 nanosheets were grafted onto the surface of hollow CNFs, and the combination boosted the charge transport, exposing abundant active edges of VS2, which enhanced the adsorption of NO2 efficiently. The activity of the VS2 edge is further confirmed by stronger NO2 adsorption with a more negative adsorption energy (-3.42 eV) and greater than the basal VS2 surface (-1.26 eV). Moreover, the exposure of rich edges induced the emergence of the expanded interlayers, which promoted the adsorption/desorption of NO2 and the interaction of gas molecules within VS2-E-C. The synergism of edge effect and interlayer engineering confers the VS2-E-C3 sensor with ultrafast response/recovery speed (9/10 s) at 60 °C, high sensitivity (∼2.50 to 15 ppm NO2), good selectivity/stability, and a low detection limit of 23 ppb. The excellent "4S" functions indicate the promising prospect of the VS2-E-C3 sensor for fast and precise NO2 detection at low-loss condition.

Thin Films of Chlorinated Vanadyl Phthalocyanines as Active Layers of Chemiresistive Sensors for the Detection of Ammonia

Halogenated metal phthalocyanines are promising materials for the manufacture of active layers of chemiresistive sensors for the detection of various gases. Despite the high interest in such sensors, there are few systematic studies of the position of halogen substituents in phthalocyanine macroring on the chemiresistive response of their films to gases. In this work, we prepared and studied films of novel tetrachlorosubstituted vanadyl phthalocyanine derivatives with Cl substituents in the peripheral (VOPcCl4-p) and nonperipheral (VOPcCl4-np) positions of the phthalocyanine ring as active layers of chemiresistive sensors to reveal the effect of the position of substituents on their structure and sensor response to low concentrations of NH3. It was shown that the films of VOPcCl4-p exhibited a noticeably higher sensor response to NH3 than the VOPcCl4-np ones. The limit of detection of NH3 was 0.7 ppm. The sensing layers demonstrated a reversible sensor response at room temperature with fairly low response/recovery times. It was also demonstrated that NH3 can be detected in the presence of various interfering gases (CO2 and H2) and some volatile organic vapors, as well as in a mixture of gases with a composition close to exhaled air.

Design and Fabrication of Ultrathin Nanoporous Donor-Acceptor Copolymer-Based Organic Field-Effect Transistors for Enhanced VOC Sensing Performance

The development of organic field-effect transistor (OFET) chemical sensors with high sensing performance and good air stability has remained a persistent challenge, thereby hindering their practical application. Herein, an OFET sensor based on a donor-acceptor copolymer is shown to provide high responsivity, sensitivity, and selectivity toward polar volatile organic compounds, as well as good air stability. In detail, a polymer blend of N-alkyl-diketopyrrolo-pyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) and polystyrene is coated onto an FET substrate via shearing-assisted phase separation (SAPS) combined with selective solvent etching to fabricate the DPP-DTT-based OFET device having an ultrathin nanoporous structure suitable for gas sensing applications. This is achieved via optimization of the film morphology by varying the shear rate to adjust the dynamic balance between the shear and capillary forces to obtain an ultrathin thickness (∼8 nm) and nanopore size (80 nm) that are favorable for the efficient diffusion and interaction of analytes with the active layer. In particular, the sensor presents high responsivities toward methanol (∼70%), acetone (∼51.3%), ethanol (∼39%), and isopropyl alcohol (IPA) (∼29.8%), along with fast response and recovery times of ∼80 and 234 s, respectively. Moreover, the average sensitivity was determined to be 5.75%/ppm from the linear plot of the responsivity against the methanol concentration in the range of 1-100 ppm. Importantly, the device also exhibits excellent long-term (30-day) air and thermal storage stability, thereby demonstrating its high potential for practical applications.

Charge Transport Manipulation via Interface Doping: Achieving Ultrasensitive Organic Semiconductor Gas Sensors

Organic semiconductor (OSC) gas sensors are receiving tremendous attention with the rise of wearable devices. Due to the complicated charge transport characteristics of OSCs, it is usually difficult to optimize their gas sensitivity by directly tailoring the original signals, as in many other kinds of sensors. Instead, device engineering strategies are frequently centered on enhancing the gas-film interaction. Herein, by introducing interface doping between self-assembled monolayers and triisopropylsilylethynyl-substituted pentacene films, we report a wide tuning of OSC gas sensitivity via charge transport manipulation and achieve an ultrahigh sensitivity of nearly 2000%/ppm to NO₂, simultaneously resulting in a fast square-wave-like response feature. In addition, this sensor demonstrates good humidity stability and operates well in flexible devices. More importantly, we identify that charge transport manipulation tailors the gas sensibility of OSCs by means of electronic structure instead of original signal values: compared to shallow traps, the presence of proper deep traps is conducive to gaining high sensitivity and ultrafast response/recovery speeds. This approach is also effective for tuning the sensitivity to reductive gases, verifying its generality for promoting the performance of OSC gas sensors, as well as a promising strategy for other types of sensors or detectors.

Emerging single atom catalysts in gas sensors

Single atom catalysts (SACs) offer unprecedented opportunities for high-efficiency reactions taking place in many important fields of catalytic processes, electrochemistry, and photoreactions. Due to their maximized atomic utilization and unique electronic and chemical properties, SACs can provide high activity and excellent selectivity for gas adsorption and electron transport, leveraging SACs that enhance the detection sensitivity and selectivity to target gases. In the past few years, SACs including both noble (Pt, Pd, Au, etc.) and non-noble (Mn, Ni, Zn etc.) metals have been demonstrated to be very useful in optimizing sensing performances. However, a comprehensive review on this topic is still missing. Herein, we summarize the synthesis technologies of SACs that are applicable to gas sensors. The electronic and chemical interactions between SACs and host sensing materials, which are crucial to sensor functions, are discussed. Then, we highlight the application progress of various SACs in gas sensors. Prospects in the creation of new sensing materials with emerging SACs and versatile supports are also present. Finally, the challenges and prospects of SACs in the future development of sensors are analyzed.

Highly Sensitive NO2 Gas Sensors Based on MoS2@MoO3 Magnetic Heterostructure

Recently, two-dimensional (2D) materials and their heterostructures have attracted considerable attention in gas sensing applications. In this work, we synthesized 2D MoS₂@MoO₃ heterostructures through post-sulfurization of α-MoO₃ nanoribbons grown via vapor phase transport (VPT) and demonstrated highly sensitive NO₂ gas sensors based on the hybrid heterostructures. The morphological, structural, and compositional properties of the MoS₂@MoO₃ hybrids were studied by a combination of advanced characterization techniques revealing a core-shell structure with the coexistence of 2H-MoS₂ multilayers and intermediate molybdenum oxysulfides on the surface of α-MoO₃. The MoS₂@MoO₃ hybrids also exhibit room-temperature ferromagnetism, revealed by vibrating sample magnetometry (VSM), as a result of the sulfurization process. The MoS₂@MoO₃ gas sensors display a p-type-like response towards NO₂ with a detection limit of 0.15 ppm at a working temperature of 125 °C, as well as superb selectivity and reversibility. This p-type-like sensing behavior is attributed to the heterointerface of MoS₂-MoO₃ where interfacial charge transfer leads to a p-type inversion layer in MoS₂, and is enhanced by magnetic dipole interactions between the paramagnetic NO₂ and the ferromagnetic sensing layer. Our study demonstrates the promising application of 2D molybdenum hybrid compounds in gas sensing applications with a unique combination of electronic and magnetic properties.

Facile Strategy for Modulating the Nanoporous Structure of Ultrathin π-Conjugated Polymer Films for High-Performance Gas Sensors

Conventional conjugated polymer (CP) films based on organic field-effect transistors (OFETs) tend to limit the performance of gas sensors owing to restricted analyte diffusion and limited interactions with the charge carriers that accumulate in the first few monolayers of the CP film in contact with the dielectric layer. Herein, a facile strategy is presented for modulating the morphology and charge-transport properties of nanoporous CP films using shearing-assisted phase separation of polymer blends for fabricating OFET-based chemical sensors. This approach enables the formation of nanoporous films with pore size and thickness in the ranges of 90-550 and 7-27 nm, respectively, which can be controlled simply by varying the shear rate. The resulting OFET sensors exhibit excellent sensing performance when exposed to NH₃ gas, demonstrating a high responsivity (≈70.7%) at 10 ppm and good selectivity toward NH₃ over various organic solvent vapors. After a comprehensive analysis of the morphology and electrical properties of the CP films, it is concluded that morphological features, such as film thickness and surface area, affect the sensing performance of nanoporous-film-based OFET sensors more significantly compared to the charge-transport characteristics of the films.

Hollow Cu2O nanospheres loaded with MoS2/reduced graphene oxide nanosheets for ppb-level NO2 detection at room temperature

Low energy consumption, high sensing response and high selectivity are the important indexes of metal oxide semiconductor (MOS) gas sensors applied in many application fields. However, the high working temperature and poor selectivity of MOS sensors severely restrict their scope of application in the Internet of Things (IoT). Herein, ternary MoS₂-rGO-Cu₂O (MG-Cu) composites with boosting ppb-level NO₂ sensing characteristics are synthesized by combining hydrothermal method and soft-template method. The optimal proportion of MoS₂, rGO and Cu₂O is systematically explored. The SEM and TEM analyses confirm the hollow Cu₂O is anchored on the surface of MG. The gas sensing tests illustrate that optimum composite sensor exhibits highest response to 500 ppb NO₂ at room temperature, which is 11 and 5 times higher compared to pure MoS₂ and binary MG15, respectively. Besides, it displays excellent selectivity and superior stability. The synergy of shell-structure with abundant mesoporous, heterojunction construction and enhanced conductivity lead to the enhanced sensing performance of ternary sensor.

NO2-Affinitive Conjugated Polymer for Selective Sub-Parts-Per-Billion NO2 Detection in a Field-Effect Transistor Sensor

Conjugated polymers (CPs) have provided versatile semiconducting implements for the development of soft electronic devices. When three CPs with the same conjugated framework but different side chains were adopted in the field-effect transistor (FET) sensor for NO₂ detection, the response to NO₂ showed an opposite tendency to the charge carrier mobility of each CP. Morphological and structural characterizations revealed that the flexible glycol side chain enhances NO₂ affinity as well as prevents the formation of lamellar stacking of the CP chains, thereby providing routes for the facile diffusion of NO₂. Additionally, theoretical calculations for CP-NO₂ complex formation at the molecular level support the relatively low energy barrier for inter-chain transition of NO₂ between the glycol-based conjugated frameworks, which implies the spontaneous internal diffusion of NO₂ to the semiconductor-dielectric interface in the FET-based sensor. As a result, the CP with a NO₂-affinitive morphology exhibited an exceptional sensitivity of 13.8%/ppb upon NO₂ (100 ppb) exposure for 50 s and provided excellent selectivity to the FET-based sensor toward other environmentally abundant harmful gases, such as SO₂, CO₂, and NH₃. In particular, the theoretic limit of detection reached down to 0.24 ppb, which is the lowest value ever reported for organic FET-based NO₂ gas sensors.

Transport of charge carriers and optoelectronic applications of highly ordered metal phthalocyanine heterojunction thin films

Organic semiconductor thin films based on polycrystalline small molecules exhibit many attractive properties that have already led to their applications in optoelectronic devices, which can be produced by less expensive and stringent processes. Conduction of electric charges typically occurs in polycrystalline organic thin films. Unavoidably, the crystalline domain size, orientation, domain boundaries and energy level of the interface affect the transport of the charge carriers in organic thin films. In this comprehensive perspective, we focus on highly ordered organic heterojunction thin films fabricated by the weak epitaxy growth method. Transport of charge carriers in these highly ordered organic heterojunction thin films was systematically studied with various characterization techniques. Recent advances are presented in high-performance optoelectronic applications based on highly ordered organic heterojunction thin films, including organic photodetectors, photovoltaic cells, photomemory devices and artificial optoelectronic synapses.

Vertically Aligned 2D MoS2 Layers with Strain-Engineered Serpentine Patterns for High-Performance Stretchable Gas Sensors: Experimental and Theoretical Demonstration

Two-dimensional (2D) molybdenum disulfide (MoS₂) with vertically aligned (VA) layers exhibits significantly enriched surface-exposed edge sites with an abundance of dangling bonds owing to its intrinsic crystallographic anisotropy. Such structural variation renders the material with exceptionally high chemical reactivity and chemisorption ability, making it particularly attractive for high-performance electrochemical sensing. This superior property can be further promoted as far as it is integrated on mechanically stretchable substrates well retaining its surface-exposed defective edges, projecting opportunities for a wide range of applications utilizing its structural uniqueness and mechanical flexibility. In this work, we explored VA-2D MoS₂ layers configured in laterally stretchable forms for multifunctional nitrogen dioxide (NO₂) gas sensors. Large-area (>cm²) VA-2D MoS₂ layers grown by a chemical vapor deposition (CVD) method were directly integrated onto a variety of flexible substrates with serpentine patterns judiciously designed to accommodate a large degree of tensile strain. These uniquely structured VA-2D MoS₂ layers were demonstrated to be highly sensitive to NO₂ gas of controlled concentration preserving their intrinsic structural and chemical integrity, e.g., significant current response ratios of ∼160-380% upon the introduction of NO₂ at a level of 5-30 ppm. Remarkably, they exhibited such a high sensitivity even under lateral stretching up to 40% strain, significantly outperforming previously reported 2D MoS₂ layer-based NO₂ gas sensors of any structural forms. Underlying principles for the experimentally observed superiority were theoretically unveiled by density functional theory (DFT) calculation and finite element method (FEM) analysis. The intrinsic high sensitivity and large stretchability of VA-2D MoS₂ layers confirmed in this study are believed to be applicable in sensing diverse gas species, greatly broadening their versatility in stretchable and wearable technologies.

Cobweb-like, Ultrathin Porous Polymer Films for Ultrasensitive NO2 Detection

Gas sensors based on polymer field-effect transistors (FETs) have drawn much attention owing to the inherent merits of specific selectivity, low cost, and room temperature operation. Ultrathin (<10 nm) and porous polymer semiconductor films offer a golden opportunity for achieving high-performance gas sensors. However, wafer-scale fabrication of such high-quality polymer films is of great challenge and has rarely been realized before. Herein, the first demonstration of 4 in. wafer-scale, cobweb-like, and ultrathin porous polymer films is reported via a one-step phase-inversion process. This approach is extremely simple and universal for constructing various ultrathin porous polymer semiconductor films. Thanks to the abundant pores, ultrathin size, and high charge-transfer efficiency of the prepared polymer films, our gas sensors exhibit many superior advantages, including ultrahigh response (2.46 × 10⁶%), low limit of detection (LOD) (<1 ppm), and excellent selectivity. Thus, the proposed fabrication strategy is exceptionally promising for mass manufacturing of low-cost high-performance polymer FET-based gas sensors.

Organic Heterojunction Devices Based on Phthalocyanines: A New Approach to Gas Chemosensing

Organic heterostructures have emerged as highly promising transducers to realize high performance gas sensors. The key reason for such a huge interest in these devices is the associated organic heterojunction effect in which opposite free charges are accumulated at the interface making it highly conducting, which can be exploited in producing highly sensitive and faster response kinetics gas sensors. Metal phthalocyanines (MPc) have been extensively studied to fabricate organic heterostructures because of the large possibilities of structural engineering which are correlated with their bulk thin film properties. Accordingly, in this review, we have performed a comprehensive literature survey of the recent researches reported about MPc based organic heterostructures and their application in gas sensors. These heterostructures were used in Organic Field-Effect Transistor and Molecular Semiconductor-Doped Insulator sensing device configurations, in which change in their electrical properties such as field-effect mobility and saturation current in the former and current at a fixed bias in the latter under redox gases exposure were assessed to determine the chemosensing performances. These sensing devices have shown very high sensitivity to redox gases like nitrogen dioxide (NO2), ozone and ammonia (NH3), which monitoring is indispensable for implementing environmental guidelines. Some of these sensors exhibited ultrahigh sensitivity to NH3 demonstrated by a detection limit of 140 ppb and excellent signal stability under variable humidity, making them among the best NH3 sensors.

Gas Sensors Based on Chemi-Resistive Hybrid Functional Nanomaterials

Chemi-resistive sensors based on hybrid functional materials are promising candidates for gas sensing with high responsivity, good selectivity, fast response/recovery, great stability/repeatability, room-working temperature, low cost, and easy-to-fabricate, for versatile applications. This progress report reviews the advantages and advances of these sensing structures compared with the single constituent, according to five main sensing forms: manipulating/constructing heterojunctions, catalytic reaction, charge transfer, charge carrier transport, molecular binding/sieving, and their combinations. Promises and challenges of the advances of each form are presented and discussed. Critical thinking and ideas regarding the orientation of the development of hybrid material-based gas sensor in the future are discussed.

Polymer/Graphene oxide nanocomposite thin film for NO2 sensor: An in situ investigation of electronic, morphological, structural, and spectroscopic properties

The higher operating temperature of metal oxide and air instability of organic based NO₂ sensor causes extremely urgent for development of a reliable low cost sensor to detect NO₂ at room temperature. Therefore, we present a fabrication of large area Polymer/GO nano hybrid thin film for polymer thin film transistors (PTFTs) based NO₂ sensors assisted via facile method named 'spreading-solidifying (SS) method', grown over air/liquid interface and successive investigation of effect of NO₂ on film via several characterizations. The PTFTs sensor has demonstrated swift and high response towards low concentration of NO₂ gas with air stability and provided real time non-invasive type NO₂ sensor. Herein, we are reporting the nanohybrid PBTTT/GO composite based PTFT sensor with good repeatability and sensor response for low concentration NO₂. The thin film grown via SS technique has reported very good adsorption/desorption of target analyte having response/recovery time of 75 s/523 s for 10 ppm concentration of NO₂ gas. It has been observed that % change in drain current (sensor response) saturated with increasing concentration of NO₂. The transient analysis demonstrates the fast sensor response and recovery time. Furthermore, in order to understand the insight of high performance of sensor, effect of NO₂ on nanohybrid film and sensing mechanism, an in situ investigations was conducted via multiple technique viz. spectral, electronic, structural, and morphological characterization. Finally, the performance of sensor and the site of adsorption of NO₂ at polymer chains were argued using schematic diagram. This work shows the simple fabrication process for mass production, low cost and room temperature operated gas sensors for monitoring the real-time environment conditions and gives an insight about the sensing mechanism adsorption site of NO₂.

Organic field-effect transistor-based flexible sensors

Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.

Solution-processed organic field-effect transistors using directed assembled carbon nanotubes and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT)

Achieving low-cost fabrication of organic field-effect transistors (OFETs) has long been pursued in the semiconductor industry. Solution-based process allows the fabrication of OFETs cost-effective because of its merit of vacuum-free and room temperature operation. Here, we show a facile and scalable fabrication of solution-processed OFETs using carbon nanotube (CNT) as source/drain electrodes and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as semiconducting layer on silicon as well as on flexible and transparent polyethylene terephthalate (PET) substrates. The CNT electrodes and the C8-BTBT film are fabricated using a dip coating-based directed assembly process, and two dip coating parameters, the pulling speed and the solution concentration, are carefully chosen so that the thickness of the C8-BTBT film is close to that of the CNT electrodes. The fabricated OFET devices show typical p-channel behavior. Low-cost, ease of processing, wafer level scalability and good compatibility with various substrates make the fabrication process presented in this paper well suited for next-generation electronics and sensors.

Gas-Induced Ion-Free Stable Radical Anion Formation of Organic Semiconducting Solids as Highly Gas-Selective Probes

The formation of stabilized radical anions on organic materials in the solid state is an important issue in radical-based fundamental research and various applications. Herein, for the first time, we report on gas-induced ion-free stable radical anion formation (SRAF) of organic semiconducting solids with high gas selectivities through the use of organic field-effect transistor (OFET) gas sensors and electron spin resonance spectroscopy. In contrast to the previously reported SRAF, which requires either anionic analytes in solution and/or cationic substituents on π-electron-deficient aromatic cores, NDI-EWGs consist of an n-type semiconducting naphthalene diimide (NDI) and various electron-withdrawing groups (EWGs) that exhibit non-ion-involved, gas-selective SRAF in the solid state. In the presence of hard Lewis base gases, NDI-EWG-based OFETs exhibit enhanced conductivity (Current-ON mode) through the formation of an SRAF NDI/gas complex, while in the presence of borderline and soft Lewis base gases, NDI-EWG-based OFETs show decreased conductivity (Current-OFF mode) by the formation of a resistive NDI/gas complex. Organic semiconducting solids with EWGs exhibiting highly gas-selective solid-SRAF constitute a very promising platform for radical-based chemistry and can be used in various applications, such as highly gas-selective probes.

Gas Sensors Based on Nano/Microstructured Organic Field-Effect Transistors

Benefiting from the advantages of organic field-effect transistors (OFETs), including synthetic versatility of organic molecular design and environmental sensitivity, gas sensors based on OFETs have drawn much attention in recent years. Potential applications focus on the detection of specific gas species such as explosive, toxic gases, or volatile organic compounds (VOCs) that play vital roles in environmental monitoring, industrial manufacturing, smart health care, food security, and national defense. To achieve high sensitivity, selectivity, and ambient stability with rapid response and recovery speed, the regulation and adjustment of the nano/microstructure of the organic semiconductor (OSC) layer has proven to be an effective strategy. Here, the progress of OFET gas sensors with nano/microstructure is selectively presented. Devices based on OSC films one dimensional (1D) single crystal nanowires, nanorods, and nanofibers are introduced. Then, devices based on two dimensional (2D) and ultrathin OSC films, fabricated by methods such as thermal evaporation, dip-coating, spin-coating, and solution-shearing methods are presented, followed by an introduction of porous OFET sensors. Additionally, the applications of nanostructured receptors in OFET sensors are given. Finally, an outlook in view of the current research state is presented and eight further challenges for gas sensors based on OFETs are suggested.

Enhanced NO2 gas sensing of a single-layer MoS2 by photogating and piezo-phototronic effects

NO₂ sensors with ultrahigh sensitivity are demanded for future electronic sensing systems. However, traditional sensors are considerably limited by the relative low sensitivity, high cost and complicated process. Here, we report a simply and reliable flexible NO₂ sensor based on single-layer MoS₂. The flexible sensor exhibits high sensitivity to NO₂ gas due to ultra-large specific surface area and the nature of two-dimensional (2D) semiconductor. When the NO₂ is 400 ppb (parts per billion), compared with the dark and strain-free conditions, the sensitivity of the single-layer sensor is enhanced to 671% with a 625 nm red light-emitting diode (LED) illumination of 4 mW/cm² power under 0.67% tensile strain. More important, the response time is dramatically reduced to ∼16 s and it only needs ∼65 s to complete 90% recovery. A theoretical model is proposed to discuss the microscopic mechanisms. We find that the remarkable sensing characteristics are the result of coupling among piezoelectricity, photoelectricity and adsorption-desorption induced charges transfer in the single-layer MoS₂ Schottky junction based device. Our work opens up the way to further enhancements in the sensitivity of gas sensor based on single-layer MoS₂ by introducing photogating and piezo-phototronic effects in mesoscopic systems.

Detection of NO2 Down to One ppb Using Ion-in-Conjugation-Inspired Polymer

Nitrogen dioxide (NO₂ ) emission has severe impact on human health and the ecological environment and effective monitoring of NO₂ requires the detection limit (limit of detection) of several parts-per-billion (ppb). All organic semiconductor-based NO₂ sensors fail to reach such a level. In this work, using an ion-in-conjugation inspired-polymer (poly(3,3'-diaminobenzidine-squarine, noted as PDBS) as the sensory material, NO₂ can be detected as low as 1 ppb, which is the lowest among all reported organic NO₂ sensors. In addition, the sensor has high sensitivity, good reversibility, and long-time stability with a period longer than 120 d. Theoretical calculations reveal that PDBS offers unreacted amine and zwitterionic groups, which can offer both the H-bonding and ion-dipole interaction to NO₂ . The moderate binding energies (≈0.6 eV) offer high sensitivity, selectivity as well as good reversibility. The results demonstrate that the ion-in-conjugation can be employed to greatly improve sensitivity and selectivity in organic gas sensors by inducing both H-bonding and ion-dipole attraction.

Scalable Directed Assembly of Highly Crystalline 2,7-Dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) Films

Assembly of organic semiconductors with ordered crystal structure has been actively pursued for electronics applications such as organic field-effect transistors (OFETs). Among various film deposition methods, solution-based film growth from small molecule semiconductors is preferable because of its low material and energy consumption, low cost, and scalability. Here, we show scalable and controllable directed assembly of highly crystalline 2,7-dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) films via a dip-coating process. Self-aligned stripe patterns with tunable thickness and morphology over a centimeter scale are obtained by adjusting two governing parameters: the pulling speed of a substrate and the solution concentration. OFETs are fabricated using the C8-BTBT films assembled at various conditions. A field-effect hole mobility up to 3.99 cm² V^-1 s^-1 is obtained. Owing to the highly scalable crystalline film formation, the dip-coating directed assembly process could be a great candidate for manufacturing next-generation electronics. Meanwhile, the film formation mechanism discussed in this paper could provide a general guideline to prepare other organic semiconducting films from small molecule solutions.

An Ultrasensitive Organic Semiconductor NO2 Sensor Based on Crystalline TIPS-Pentacene Films

Organic semiconductor gas sensor is one of the promising candidates of room temperature operated gas sensors with high selectivity. However, for a long time the performance of organic semiconductor sensors, especially for the detection of oxidizing gases, is far behind that of the traditional metal oxide gas sensors. Although intensive attempts have been made to address the problem, the performance and the understanding of the sensing mechanism are still far from sufficient. Herein, an ultrasensitive organic semiconductor NO₂ sensor based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-petacene) is reported. The device achieves a sensitivity over 1000%/ppm and fast response/recovery, together with a low limit of detection (LOD) of 20 ppb, all of which reach the level of metal oxide sensors. After a comprehensive analysis on the morphology and electrical properties of the organic films, it is revealed that the ultrahigh performance is largely related to the film charge transport ability, which was less concerned in the studies previously. And the combination of efficient charge transport and low original charge carrier concentration is demonstrated to be an effective access to obtain high performance organic semiconductor gas sensors.

UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection

A new type of nitrogen dioxide (NO₂ ) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here. The NO₂ sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO₂ ] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO₂ ] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO₂ and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.

Sensitive and Selective NO2 Sensing Based on Alkyl- and Alkylthio-Thiophene Polymer Conductance and Conductance Ratio Changes from Differential Chemical Doping

NO₂-responsive polymer-based organic field-effect transistors (OFETs) are described, and room-temperature detection with high sensitivity entirely from the semiconductor was achieved. Two thiophene polymers, poly(bisdodecylquaterthiophene) and poly(bisdodecylthioquaterthiophene) (PQT12 and PQTS12, respectively), were used as active layers to detect a concentration at least as low as 1 ppm of NO₂. The proportional on-current change of OFETs using these polymers reached over 400% for PQTS12, which is among the highest sensitivities reported for a NO₂-responsive device based on an organic semiconducting film. From measurements of cyclic voltammetry and the electronic characteristics, we found that the introduction of sulfurs into the side chains induces traps in films of the PQTS12 and also decreases domain sizes, both of which could contribute to the higher sensitivity of PQTS12 to NO₂ gas compared with PQT12. The ratio of responses of PQTS12 and PQT12 is higher for exposures to lower concentrations, making this parameter a means of distinguishing responses to low concentrations for extended times from exposures to high concentrations from shorter times. The responses to nonoxidizing vapors were much lower, indicating good selectivity to NO₂ of two polymers. This work demonstrates the capability of increasing selectivity and calibration of OFET sensors by modulating redox and aggregation properties of polymer semiconductors.

Highly Sensitive Flexible NH3 Sensors Based on Printed Organic Transistors with Fluorinated Conjugated Polymers

Understanding the sensing mechanism in organic chemical sensors is essential for improving the sensing performance such as detection limit, sensitivity, and other response/recovery time, selectivity, and reversibility for real applications. Here, we report a highly sensitive printed ammonia (NH₃) gas sensor based on organic thin film transistors (OTFTs) with fluorinated difluorobenzothiadiazole-dithienosilole polymer (PDFDT). These sensors detected NH₃ down to 1 ppm with high sensitivity (up to 56%) using bar-coated ultrathin (<4 nm) PDFDT layers without using any receptor additives. The sensing mechanism was confirmed by cyclic voltammetry, hydrogen/fluorine nuclear magnetic resonance, and UV/visible absorption spectroscopy. PDFDT-NH₃ interactions comprise hydrogen bonds and electrostatic interactions between the PDFDT polymer backbone and NH₃ gas molecules, thus lowering the highest occupied molecular orbital levels, leading to hole trapping in the OTFT sensors. Additionally, density functional theory calculations show that gaseous NH₃ molecules are captured via cooperation of fluorine atoms and dithienosilole units in PDFDT. We verified that incorporation of functional groups that interact with a specific gas molecule in a conjugated polymer is a promising strategy for producing high-performance printed OTFT gas sensors.

Confined Formation of Ultrathin ZnO Nanorods/Reduced Graphene Oxide Mesoporous Nanocomposites for High-Performance Room-Temperature NO2 Sensors

Here we demonstrate high-performance room-temperature NO₂ sensors based on ultrathin ZnO nanorods/reduced graphene oxide (rGO) mesoporous nanocomposites. Ultrathin ZnO nanorods were loaded on rGO nanosheets by a facile two-step additive-free solution synthesis involving anchored seeding followed by oriented growth. The ZnO nanorod diameters were simply controlled by the seed diameters associated with the spatial confinement effects of graphene oxide (GO) nanosheets. Compared to the solely ZnO nanorods and rGO-based sensors, the optimal sensor based on ultrathin ZnO nanorods/rGO nanocomposites exhibited higher sensitivity and quicker p-type response to parts per million level of NO₂ at room temperature, and the sensitivity to 1 ppm of NO₂ was 119% with the response and recovery time being 75 and 132 s. Moreover, the sensor exhibited full reversibility, excellent selectivity, and a low detection limit (50 ppb) to NO₂ at room temperature. In addition to the high transport capability of rGO as well as excellent NO₂ adsorption ability derived from ultrathin ZnO nanorods and mesoporous structures, the superior sensing performance of the nanocomposites was attributed to the synergetic effect of ZnO and rGO, which was realized by the electron transfer across the ZnO-rGO interfaces through band energy alignment.

Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.

Mesoporous InN/In2O3 heterojunction with improved sensitivity and selectivity for room temperature NO2 gas sensing

Establishing heterostructures is a good strategy to improve gas sensing performance, and has been studied extensively. In this work, mesoporous InN/In2O3 composite (InNOCs) heterostructures were prepared through a simple two-step strategy involving hydrothermal synthesis of In2O3 and subsequent nitriding into InN-composite In2O3 heterostructures. We found that the InN content has great influence on the resistance of InNOCs, and thus, the gas sensing performance. In particular, InNOC-36.9 (with InN content of 36.9% in the composites) shows an excellent sensing response towards different concentrations of NO2, as well as good stability after one week of exposure to 200 ppb NO2 at room temperature. The highest sensing response (ΔR/R0 ) is up to 1.8 for the low NO2 concentration of 5 ppb. Even more significantly, the theoretical limit of detection (LOD) of the InNOC-36.9 sensor is 31.7 ppt based on a signal-to-noise ratio of 3 (the measured LOD is 5 ppb), which is far below the US NAAQS  value (NO2: 53 ppb). In addition, a rational band structure model combined with a surface reaction model is proposed to explain the sensing mechanism.

Electrical gas sensors based on structured organic ultra-thin films and nanocrystals on solid state substrates

Gas sensors, as useful tools to detect specific gas species such as toxic and explosive gases or volatile organic compounds, are the key components for environmental monitoring, fruit maturity and food safety monitoring, health care, and so on. The present commercial products based on porous metal oxide materials still face problems, such as high temperature operation and low level of selectivity. Thin films or nanostructures of organic materials with thickness or grain size down to nanometer scale represent promising candidates for gas sensing due to their potential for achieving high selectivity, portability and low cost. However, there are still challenges related to their stability, reproducibility and response/recovery speed despite the efforts in materials design, morphology control or device configuration, all of which have been expended during the last few decades. In this review, we summarize the progress of recent research on gas sensors based on organic ultra-thin films and nanostructures. We specifically discuss the effect of microstructure in the active layer on the sensing performance and mechanism.

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors

Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

Device Engineered Organic Transistors for Flexible Sensing Applications

Organic thin-film transistors (OFETs) represent a promising candidate for next-generation sensing applications because of the intrinsic advantages of organic semiconductors. The development of flexible sensing devices has received particular interest in the past few years. The recent efforts of developing OFETs for sensitive and specific flexible sensors are summarized from the standpoint of device engineering. The tuning of signal transduction and signal amplification are highlighted based on an overview of active-layer thickness modulation, functional receptor implantation and device geometry optimization.

Fully Integrated Organic Nanocrystal Diode as High Performance Room Temperature NO2 Sensor

Organic diodes consisting of molecular nano-pyramid structures sandwiched between metal and strained nano-membrane electrodes are created. The robust and smooth contacts provided by self-curled metal layers render the molecular nano-pyramids efficent channels for detecting nitrogen dioxide airflow.

Hierarchical ZnO Nanosheet-Nanorod Architectures for Fabrication of Poly(3-hexylthiophene)/ZnO Hybrid NO2 Sensor

A facile one-step solution method has been developed here to fabricate hierarchical ZnO nanosheet-nanorod architectures for compositing with poly(3-hexylthiophene) (P3HT) for fabricating a hybrid NO2 sensor. The hierarchical ZnO nanosheet-nanorod architectures were controllably synthesized by aging the solutions containing 0.05 mol·L(-1) Zn(2+) and 0.33 mol·L(-1) OH(-) at 60 °C through a metastable phase-directed mechanism. The concentration of OH(-) played a huge role on the morphology evolution. When the [OH(-)] concentration was decreased from 0.5 to 0.3 mol·L(-1), the morphology of the ZnO nanostructures changed gradually from monodispersed nanorods (NR) to nanorod assemblies (NRA), and then to nanosheet-nanorod architectures (NS-NR) and nanosheet assemblies (NSA), depending on the formation of various metastable, intermediate phases. The formation of NS-NR included the initial formation of ZnO nanosheets/γ-Zn(OH)2 mixed intermediates, followed by the dissolution of Zn(OH)2, which served as soluble zinc source. Soluble Zn(OH)2 facilitated the dislocation-driven secondary growth of ZnO nanorod arrays on the primary defect-rich nanosheet substrates. Hybrid sensors based on composite films composed of P3HT and the as-prepared ZnO nanostructures were fabricated for the detection of NO2 at room temperature. The P3HT/ZnO NS-NR bilayer film exhibited not only the highest sensitivity but also good reproducibility and selectivity to NO2 at room temperature. The enhanced sensing performance was attributed to the formation of the P3HT/ZnO heterojunction in addition to the enhanced adsorption of NO2 by NS-NR ZnO rich in oxygen-vacancy defects.

Surface Superoxide Complex Defects-Boosted Ultrasensitive ppb-Level NO2 Gas Sensors

Sn(4+) -O2 (-•) centers are intentionally created in SnO2 nanoflowers by a thermodynamically instable synthetic process. The resulting SnO2 nanoflower-based sensor is confirmed to be the most sensitive ppb-level chemiresistor NO2 sensor to date. The Sn(4+) -O2 (-•) centers with strong gas-adsorbing and high eletron-donating capability towards NO2 molecules decisively determine the sensor sensitivity.

Fast patterning of oriented organic microstripes for field-effect ammonia gas sensors

A series of organic field-effect transistors (OFETs) with patterned ultra-thin films for NH3 detection are achieved via fast dip-coating. The morphology and packing structure of the ultra-thin films are greatly dependent on the surface energy of the substrates, geometry features of the patterned electrodes and evaporation atmosphere during the dip-coating process, which in turn results in a significant difference in the NH3 sensing properties. Based on the newly proposed mechanism, low-trap dielectric-semiconductor interfaces, a stripe-like morphology and an ultrathin film (as low as 2 nm) enable the OFET-based sensors to exhibit unprecedented sensitivity (∼160) with a short response/recovery time. The efficient (2 mm s(-1)), reliable, and scalable patterning strategy opens a new route for solution-processed OFET-based gas sensors.

Nanostructured Materials for Room-Temperature Gas Sensors

Sensor technology has an important effect on many aspects in our society, and has gained much progress, propelled by the development of nanoscience and nanotechnology. Current research efforts are directed toward developing high-performance gas sensors with low operating temperature at low fabrication costs. A gas sensor working at room temperature is very appealing as it provides very low power consumption and does not require a heater for high-temperature operation, and hence simplifies the fabrication of sensor devices and reduces the operating cost. Nanostructured materials are at the core of the development of any room-temperature sensing platform. The most important advances with regard to fundamental research, sensing mechanisms, and application of nanostructured materials for room-temperature conductometric sensor devices are reviewed here. Particular emphasis is given to the relation between the nanostructure and sensor properties in an attempt to address structure-property correlations. Finally, some future research perspectives and new challenges that the field of room-temperature sensors will have to address are also discussed.