Work-function-tuned reduced graphene oxide via direct surface functionalization as source/drain electrodes in bottom-contact organic transistors

Controlling Fluorination Density of Soluble Polyimide Gate Dielectrics and its Influence on Organic Crystal Growth and Device Operational Stability

Fluorinated polyimides (PIs) are among the most promising candidates for gate dielectric materials in organic electronic devices because of their solution processability and outstanding chemical, mechanical, and thermal stabilities. Additionally, fluorine (F) substitution improves the electrical properties of PI thin films, such as enhanced dielectric properties and reduced surface trap densities. However, the relationship between the fluorination density of PIs and crystal growth modes of vacuum-deposited conjugated molecules on PI thin films, which is directly related to the lateral charge transport along the PI-organic semiconductor interface, has not been systematically studied. Herein, five different soluble PIs with different F densities were synthesized, and the correlation between fluorination and thin-film properties was systematically investigated. Not only were their dielectric properties modulated, but the growth modes of the organic molecules deposited on the PI thin films also changed with increasing surface F density. This phenomenon was observed by both surface and crystallographic analyses, which resulted in extremely high operational stability of field-effect transistors and the successful fabrication of organic complementary circuits. We believe that the correlation between PI backbone fluorination and its thin-film properties will provide practical insights into the material design based on controlled molecular directed surface assembly on fluorinated polymer dielectrics.

Novel Mg- and Ga-doped ZnO/Li-Doped Graphene Oxide Transparent Electrode/Electron-Transporting Layer Combinations for High-Performance Thin-Film Solar Cells

Herein, a novel combination of Mg- and Ga-co-doped ZnO (MGZO)/Li-doped graphene oxide (LGO) transparent electrode (TE)/electron-transporting layer (ETL) has been applied for the first time in Cu₂ ZnSn(S,Se)₄ (CZTSSe) thin-film solar cells (TFSCs). MGZO has a wide optical spectrum with high transmittance compared to that with conventional Al-doped ZnO (AZO), enabling additional photon harvesting, and has a low electrical resistance that increases electron collection rate. These excellent optoelectronic properties significantly improved the short-circuit current density and fill factor of the TFSCs. Additionally, the solution-processable alternative LGO ETL prevented plasma-induced damage to chemical bath deposited cadmium sulfide (CdS) buffer, thereby enabling the maintenance of high-quality junctions using a thin CdS buffer layer (≈30 nm). Interfacial engineering with LGO improved the V_oc of the CZTSSe TFSCs from 466 to 502 mV. Furthermore, the tunable work function obtained through Li doping generated a more favorable band offset in CdS/LGO/MGZO interfaces, thereby, improving the electron collection. The MGZO/LGO TE/ETL combination achieved a power conversion efficiency of 10.67%, which is considerably higher than that of conventional AZO/intrinsic ZnO (8.33%).

The design of a point of care FET biosensor to detect and screen COVID-19

Graphene field effect transistor (FET) biosensors have attracted huge attention in the point-of-care and accurate detection. With the recent spread of the new emerging severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), the need for rapid, and accurate detection & screening tools is arising. Employing these easy-to-handle sensors can offer cheap, rapid, and accurate detection. Herein, we propose the design of a reduced graphene oxide (rGO) FET biosensor for the detection of SARS-CoV-2. The main objective of this work is to detect the SARS-CoV-2 spike protein antigen on spot selectively and rapidly. The sensor consists of rGO channel, a pair of golden electrodes, and a gate underneath the channel. The channel is functionalized with COVID-19 spike protein antibodies to achieve selectivity, and with metal nanoparticles (MNPs) such as copper and silver to enhance the bio-sensing performance. The designed sensor successfully detects the SARS-CoV-2 spike protein and shows singular electrical behavior for detection. The semi-empirical modeling approach combined with none-equilibrium Green's function were used to study the electronic transport properties of the rGO-FET biosensor before and after the addition of the target molecules. The sensor's selectivity is also tested against other viruses. This study provides a promising guide for future practical fabrication.

A Blueprint for the Synthesis and Characterization of Thiolated Graphene

Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials.

Revealing the Intrinsic Nature of the Synergistic Effect Caused by the Formation of Heterojunctions in Cu-Cu2O/rGO-NH2 Nanomaterials in the Catalysis of Selective Aerobic Oxidation of Benzyl Alcohol

Ternary nanomaterials Cu-Cu₂O/rGO-NH₂ (rGO = reduced graphene oxide) exhibited a synergistic effect in the quantitative catalysis of selective aerobic oxidation of benzyl alcohol. The synergistic effect is attributed to the heterojunctions among the three components and in intrinsic nature, the formation of the heterojunctions lowered the conduction band (CB) energy level and raised the valence band (VB) energy level of the main catalyst Cu₂O, which eases electron transfer from the catalyst to O₂ in its activation and from the substrate to the catalyst in the oxidation, respectively.

Structural influence of a dichalcogenopheno-1,3,4-chalcogenodiazole comonomer on the optoelectronic properties of diketopyrrolopyrrole-based conjugated polymers

Dichalcogenopheno-1,3,4-chalcogenodiazole units are newly designed and introduced into dithienyl diketopyrrolopyrrole-based copolymers showing promising optoelectronic characteristics.

γ-Ray irradiation-induced unprecedent optical, frictional and electrostatic performances on CVD-prepared monolayer WSe2

Our work showed a new defect inducing technique to engineer the bandgap and control the optical, frictional and electrostatic properties of atomically thin WSe₂.

Highly Stable Artificial Synapse Consisting of Low-Surface Defect van der Waals and Self-Assembled Materials

The long-term plasticity of biological synapses was successfully emulated in an artificial synapse fabricated by combining low-surface defect van der Waals (vdW) and self-assembled (SA) materials. The synaptic operation could be achieved by facilitating hole trapping and releasing only via the amine (NH₂) functional groups in 3-aminopropyltriethoxysilane, which consequently induced a gradual conductance change in the WSe₂ channel. The vdW-SA synaptic device exhibited extremely stable long-term potentiation/depression (LTP/LTD) characteristics; its dynamic range and nonlinearity reproduced near 100 and 3.13/-6.53 (for LTP/LTD) with relative standard deviations (RSDs) below 2%. Furthermore, after conducting training and recognition tasks for the Modified National Institute of Standard and Technology (MNIST) digit patterns, we verified that the maximum recognition rate was 78.3%, and especially, its RSD was as low as 0.32% over several training/recognition cycles. This study provides a background for future research on advanced artificial synapses based on vdW and organic materials.

Inducing rapid polysulfide transformation through enhanced interfacial electronic interaction for lithium-sulfur batteries

Sluggish dynamics of polysulfide (LiPS) conversion leads to reduced utilization of active sulfur and rapid capacity decay. Introducing catalysts into lithium-sulfur battery systems is a feasible and imperative strategy to tackle this problem. Previous research studies have mainly been focused on selecting new catalysts and design functional structures to improve performance, and ignoring the interaction between catalysts and their carriers. Herein, by simply fabricating a high-efficiency ZnS quantum dot@graphene nanosheet catalyst (ZnS QD@rGO), we utilized enhanced interfacial electronic interaction to accelerate polysulfide conversion for high energy density Li-S batteries. With the smaller size of ZnS, the interfacial electronic interaction becomes more enhanced, which was evidenced by DFT calculations and XPS experiments. After mixing with sulfur, the electrodes achieved a high capacity of 857.8 mA h g^-1 at 1 C and a retention of 91.2% after 300 cycles. Also, a sulfur cathode with a high actual capacity of ∼4.0 mA h cm^-2 could be obtained, with no obvious capacity decay within 100 cycles. We believe that this strategy represents a new perspective on designing efficient high-load electrodes for Li-S batteries.

From graphene oxide towards aminated graphene: facile synthesis, its structure and electronic properties

In this paper we present a facile method for the synthesis of aminated graphene derivative through simultaneous reduction and amination of graphene oxide via two-step liquid phase treatment with hydrobromic acid and ammonia solution in mild conditions. The amination degree of the obtained aminated reduced graphene oxide is of about 4 at.%, whereas C/O ratio is up to 8.8 as determined by means of X-ray photoelectron spectroscopy. The chemical reactivity of the introduced amine groups is further verified by successful test covalent bonding of the obtained aminated graphene with 3-Chlorobenzoyl chloride. The morphological features and electronic properties, namely conductivity, valence band structure and work function are studied as well, illustrating the influence of amine groups on graphene structure and physical properties. Particularly, the increase of the electrical conductivity, reduction of the work function value and tendency to form wrinkled and corrugated graphene layers are observed in the aminated graphene derivative compared to the pristine reduced graphene oxide. As obtained aminated graphene could be used for photovoltaic, biosensing and catalysis application as well as a starting material for further chemical modifications.

Transparent and Colorless Polyimides Containing Multiple Trifluoromethyl Groups as Gate Insulators for Flexible Organic Transistors with Superior Electrical Stability

A suitable insulating polymer material that is compatible with the fabrication process of organic transistors and has excellent electrical properties is critically required for the next-generation flexible organic electronics. In this study, using a one-step polymerization method, we synthesized two different solution-processable polyimides (PIs) incorporated with abundant trifluoromethyl groups. Not only were the two resulting PIs-termed 6FDA-6FDAM-PI and 6FDA-TFMB-PI-well soluble in organic solvents, but also they showed transparent and colorless optical properties. The fluorinated PI films showed smooth surface topographies and surface energy values that were appropriate for their use in bottom-gate organic transistors. Organic transistors separately fabricated with 6FDA-6FDAM-PI and 6FDA-TFMB-PI as the gate insulators showed excellent device performance and electrical stability under various testing conditions, especially for pentacene-based devices. The excellent performance of the devices with fluorinated PIs was attributed to the enhanced microstructure of the organic semiconductor and the fluorine-rich characteristic of the underlying gate insulator. Furthermore, organic complementary circuits including the basic logic gates of NOT, NOR, and NAND were demonstrated using these devices.

Engineering work function of graphene oxide from p to n type using a low power atmospheric pressure plasma jet

In this work, we demonstrate doping graphene oxide (GO) films using a low power atmospheric pressure plasma jet (APPJ) with subsequent tuning of the work function. The surface potential of the plasma functionalized GO films could be tuned by 120 ± 10 mV by varying plasma parameters. X-ray spectroscopy used to probe these changes in electronic structure of systematically functionalized GO films by plasma. Detailed investigation using X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure spectroscopy revealed the reactive nitrogen species in the plasma induce finite changes in the surface chemistry of the GO films, introducing additional density of states near the top of the valence band edge. Nitrogen introduced by the atmospheric pressure plasma is predominantly in a graphitic configuration with a varying concentration of pyridinic nitrogen. Additionally, evidence of gradual de-epoxidation of these GO films with increasing plasma exposure was also observed. We attribute this variation in work function values to the configuration of nitrogen in the graphitic structure as revealed by X-ray spectroscopy. With pyridinic nitrogen the electronic states of GO became electron deficient, inducing a p-type doping whereas an increase in graphitic nitrogen increased the electron density of GO leading to an n-type doping effect. Nitrogen doping was also found to decrease the resistivity from 138 MΩ sq^-1 to 4 MΩ sq^-1. These findings are extremely useful in fabricating heterojunction devices like sensors and optoelectronic devices where band structure alignment is key to device performance when GO is used as a charge transport layer. This technique can be extended to other known 2D systems.

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

Work Function Lowering of Graphite by Sequential Surface Modifications: Nitrogen and Hydrogen Plasma Treatment

Graphite-related materials play an important role in various kinds of devices and catalysts. Controlling the properties of such materials is of great significance to widen the potential applications and improve the performance of such applications as field emission devices and catalyst for fuel cells. In particular, the work function strongly affects the performance, and thus development of methods to tune the work function widely is urgently required. Here, we achieved wide-range control of the work function of graphite by nitrogen and hydrogen plasma treatments. The time of hydrogen plasma treatment and the amount of nitrogen atoms doped beforehand could control the work function of graphite from 2.9 to 5.0 eV. The formation of a surface dipole layer and the nitrogen-derived electron donation contributed to such lowering of the work function, which is advantageous for applications in various fields.

All-Inkjet-Printed Vertical Heterostructure for Wafer-Scale Electronics

In this study, we fabricated an array of all-inkjet-printed vertical Schottky barrier (SB) transistors and various logic gates on a large-area substrate. All of the electronic components, including the indium-gallium-zinc-oxide (IGZO) semiconductor, reduced graphene oxide (rGO), and indium-tin-oxide (ITO) electrodes, and the ion-gel gate dielectric, were directly and uniformly printed onto a 4 in. wafer. The vertical SB transistors had a vertically stacked structure, with the inkjet-printed IGZO semiconductor layer placed between the rGO source electrode and the ITO drain electrode. The ion-gel gate dielectric was also inkjet-printed in a coplanar gate geometry. The channel current was controlled by adjusting the SB height at the rGO/IGZO heterojunction under application of an external gate voltage. The high intrinsic capacitance of the ion-gel gate dielectric facilitated modulation of the SB height at the source/channel heterojunction to around 0.5 eV at a gate voltage lower than 2 V. The resulting vertical SB transistors exhibited a high current density of 2.0 A·cm^-2, a high on-off current ratio of 10⁶, and excellent operational and environmental stabilities. The simple device structure of the vertical SB transistors was beneficial for the fabrication of all-inkjet-printed low-power logic circuits such as the NOT, NAND, and NOR gates on a large-area substrate.

Grain Boundary Interfaces Controlled by Reduced Graphene Oxide in Nonstoichiometric SrTiO3-δ Thermoelectrics

Point defect or doping in Strontium titanium oxide (STO) largely determines the thermoelectric (TE) properties. So far, insufficient knowledge exists on the impact of double Schottky barrier on the TE performance. Herein, we report a drastic effect of double Schottky barrier on the TE performance in undoped STO. It demonstrates that incorporation of Reduced Graphene Oxide (RGO) into undoped STO weakens the double Schottky barrier and thereby results in a simultaneous increase in both carrier concentration and mobility of undoped STO. The enhanced mobility exhibits single crystal-like behavior. This increase in the carrier concentration and mobility boosts the electrical conductivity and power factor of undoped STO, which is attributed to the reduction of the double Schottky barrier height and/or the band alignment of STO and RGO that allow the charge transfer through the interface at grain boundaries. Furthermore, this STO/RGO interface also enhances the phonon scattering, which results in low thermal conductivity. This strategy significantly increases the ratio of σ/κ, resulting in an enhancement in ZT as compared with pure undoped STO. This study opens a new window to optimize the TE properties of many candidate materials.

Structural design considerations of solution-processable graphenes as interfacial materials via a controllable synthesis method for the achievement of highly efficient, stable, and printable planar perovskite solar cells

Solution-processable graphenes (represented by reduced graphene oxides, rGOs) have shown promising abilities as HTLs in perovskite solar cells (PeSCs). However, there has been no attempt to systematically tailor the characteristics of rGOs to the specifications of PeSCs. Furthermore, the applications of rGO HTLs have been limited to the spin-coating system, which is incompatible with roll-to-roll manufacturing. Here, with the aid of a polymer-graphene hybrid structure and a controllable synthesis method, we successfully developed a much more feasible rGO HTL and demonstrated highly efficient, stable, and printable p-i-n planar PeSCs with facile one-step processing. The characteristics of the developed polyacrylonitrile-grafted rGOs (PRGOs) were optimized by varying the synthesis conditions including the γ-radiation intensity (200, 400, and 600 kGy) and the concentration of the acrylonitrile (AN) precursor (2, 4, and 6 wt%). It is revealed that the PRGO synthesized with a lower AN concentration and a higher irradiation intensity (PRGO_2-600) is the most suitable one for PeSC HTL. PRGO_2-600 effectively raises the average power conversion efficiencies (PCEs) of PeSCs by ∼36% compared to those of conventional PeSCs using PEDOT:PSS HTL. The comprehensive investigations confirm that the enhanced device efficiency stems from (1) the favorable interlayer characteristics of the PRGO itself and (2) the well-crystallized perovskite layer grown on the PRGO. In addition to the PCE, thechemically inert PRGOs can also maintain their electrical properties over time and retard the decomposition of perovskite films, thereby prolonging the operation time of PeSCs in the atmosphere. More importantly, the applicability of the PRGO HTL is clearly verified even in the roll-to-roll compatible slot-die coating system, exhibiting comparable performances to those of the spin-coating system.

Nanopatched Graphene with Molecular Self-Assembly Toward Graphene-Organic Hybrid Soft Electronics

Increasing the mechanical durability of large-area polycrystalline single-atom-thick materials is a necessary step toward the development of practical and reliable soft electronics based on these materials. Here, it is shown that the surface assembly of organosilane by weak epitaxy forms nanometer-thick organic patches on a monolayer graphene surface and dramatically increases the material's resistance to harsh postprocessing environments, thereby increasing the number of ways in which graphene can be processed. The nanopatched graphene with the improved mechanical durability enables stable operation when used as transparent electrodes of wearable strain sensors. Also, the nanopatched graphene applied as an electrode modulates the molecular orientation of deposited organic semiconductor layers, and yields favorable nominal charge injection for organic transistors. These results demonstrate the potential for use of self-assembled organic nanopatches in graphene-based soft electronics.

Controllable Bipolar Doping of Graphene with 2D Molecular Dopants

The fine control of graphene doping levels over a wide energy range remains a challenging issue for the electronic applications of graphene. Here, the controllable doping of chemical vapor deposited graphene, which provides a wide range of energy levels (shifts up to ± 0.5 eV), is demonstrated through physical contact with chemically versatile graphene oxide (GO) sheets, a 2D dopant that can be solution-processed. GO sheets are a p-type dopant due to their abundance of electron-withdrawing functional groups. To expand the energy window of GO-doped graphene, the GO surface is chemically modified with electron-donating ethylene diamine molecules. The amine-functionalized GO sheets exhibit strong n-type doping behaviors. In addition, the particular physicochemical characteristics of the GO sheets, namely their sheet sizes, number of layers, and degree of oxidation and amine functionality, are systematically varied to finely tune their energy levels. Finally, the tailor-made GO sheet dopants are applied into graphene-based electronic devices, which are found to exhibit improved device performances. These results demonstrate the potential of GO sheet dopants in many graphene-based electronics applications.

Design and adjustment of the graphene work function via size, modification, defects, and doping: a first-principle theory study

In this work, the work function (WF) of graphenes, which are used as electronic devices, has been designed and evaluated by using the first-principle approach. Different states of graphene were considered, such as surface modification, doping, and defects. Firstly, WF strongly depends on the width of pristine graphene. A bigger width leads to a smaller WF. In addition, the effects of hydroxyls, defects, and positions of hydroxyls and defects are of concern. The WF of the graphene which is modified with hydroxyls is bigger than that of the pristine graphene. Moreover, the WF value increases with the number of hydroxyls. Positions of the hydroxyls and defects that deviated from the center have limited influence on the WF, whereas the effect of the position in the center is substantial. Lastly, B, N, Al, Si, and P are chosen as the doping elements. The n-type graphene doped with N and P atoms results in a huge decline in the WF, whereas the p-type graphene doped with B and Al atoms causes a great increase in the WF. However, the doping of Al in graphene is difficult, whereas the doping of B and N is easier. These discoveries will provide heavy support for the production of graphene-based devices.

Enhancing the Durability and Carrier Selectivity of Perovskite Solar Cells Using a Blend Interlayer

A mechanically and thermally stable and electron-selective ZnO/CH₃NH₃PbI₃ interface is created via hybridization of a polar insulating polymer, poly(ethylene glycol) (PEG), into ZnO nanoparticles (NPs). PEG successfully passivates the oxygen defects on ZnO and prevents direct contact between CH₃NH₃PbI₃ and defects on ZnO. A uniform CH₃NH₃PbI₃ film is formed on a soft ZnO:PEG layer after dispersion of the residual stress from the volume expansion during CH₃NH₃PbI₃ conversion. PEG also increases the work of adhesion of the CH₃NH₃PbI₃ film on the ZnO:PEG layer and holds the CH₃NH₃PbI₃ film with hydrogen bonding. Furthermore, PEG tailors the interfacial electronic structure of ZnO, reducing the electron affinity of ZnO. As a result, a selective electron-collection cathode is formed with a reduced electron affinity and a deep-lying valence band of ZnO, which significantly enhances the carrier lifetime (473 μs) and photovoltaic performance (15.5%). The mechanically and electrically durable ZnO:PEG/CH₃NH₃PbI₃ interface maintains the sustainable performance of the solar cells over 1 year. A soft and durable cathodic interface via PEG hybridization in a ZnO layer is an effective strategy toward flexible electronics and commercialization of the perovskite solar cells.

Simultaneous Nitrogen Doping and Pore Generation in Thermo-Insulating Graphene Films via Colloidal Templating

We report a simple method for preparing highly efficient thermoelectric materials through the fabrication of nitrogen-doped reduced graphene oxide (GO) with a porous structure. The samples were produced by thermal annealing of GO/nitrogen-rich polystyrene (N-PS) particle composite films using a colloidal templating method. N-PS particles served as a nitrogen dopant source for the nitrogen-doped thermally reduced graphene oxide (TrGO) as well as sacrificial particles for the porous structure. The S values of the porous TrGO films were negative, indicating that the samples were transformed into n-type materials. Their porous structures simultaneously resulted in materials with high σ values and low in-plane κ values by providing numerous air cavities for phonon scattering and destruction of the anisotropic structure, maintaining an interconnected structure for an electron transport path. Thus, the porous TrGO films exhibited enhanced power factors and low κ values. The highest ZT value of 1.39 × 10^-4 was attained for a porous TrGO film annealed at 1100 °C, which was 1200 times higher than that of a nonporous TrGO film. This study emphasizes that an isotropic orientation of two-dimensional materials has a significant effect on the suppression of in-plane κ, leading to their enhanced thermoelectric performance.

Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly

One-dimensional (1D) nano/microwires have attracted significant attention as promising building blocks for various electronic and optical device applications. The integration of these elements into functional device networks with controlled alignment and density presents a significant challenge for practical device applications. Here, we demonstrated the fabrication of wafer-scale microwire field-effect transistor (FET) arrays based on well-aligned inorganic semiconductor microwires (indium-gallium-zinc-oxide (IGZO)) and organic polymeric insulator microwires fabricated via a simple and large-area evaporative assembly technique. This microwire fabrication method offers a facile approach to precisely manipulating the channel dimensions of the FETs. The resulting solution-processed monolithic IGZO microwire FETs exhibited a maximum electron mobility of 1.02 cm(2) V(-1) s(-1) and an on/off current ratio of 1 × 10(6). The appropriate choice of the polymeric microwires used to define the channel lengths enabled fine control over the threshold voltages of the devices, which were employed to fabricate high-performance depletion-load inverters. Low-voltage-operated microwire FETs were successfully fabricated on a plastic substrate using a high-capacitance ion gel gate dielectric. The microwire fabrication technique involving evaporative assembly provided a facile, effective, and reliable method for preparing flexible large-area electronics.

Sheet Size-Induced Evaporation Behaviors of Inkjet-Printed Graphene Oxide for Printed Electronics

The size of chemically modified graphene nanosheets is a critical parameter that affects their performance and applications. Here, we show that the lateral size of graphene oxide (GO) nanosheets is strongly correlated with the concentration of graphite oxide present in the suspension as graphite oxide is exfoliated by sonication. The size of the GO nanosheets increased from less than 100 nm to several micrometers as the concentration of graphite oxide in the suspension was increased up to a critical concentration. An investigation of the evaporation behavior of the GO nanosheet solution using inkjet printing revealed that the critical temperature of formation of a uniform film, T(c), was lower for the large GO nanosheets than for the small GO nanosheets. This difference was attributed to the interactions between the two-dimensional structures of GO nanosheets and the substrate as well as the interactions among the GO nanosheets. Furthermore, we fabricated organic thin film transistors (OTFTs) using line-patterned reduced GO as electrodes. The OTFTs displayed different electrical performances, depending on the graphene sheet size. We believe that our new strategy to control the size of GO nanosheets and our findings about the colloidal and electrical properties of size-controlled GO nanosheets will be very effective to fabricate graphene based printed electronics.

Moving beyond flexible to stretchable conductive electrodes using metal nanowires and graphenes

Stretchable and/or flexible electrodes and their associated electronic devices have attracted great interest because of their possible applications in high-end technologies such as lightweight, large area, wearable, and biointegrated devices. In particular, metal nanowires and graphene derivatives are chosen for electrodes because they show low resistance and high mechanical stability. Here, we review stretchable and flexible soft electrodes by discussing in depth the intrinsic properties of metal NWs and graphenes that are driven by their dimensionality. We investigate these properties with respect to electronics, optics, and mechanics from a chemistry perspective and discuss currently unsolved issues, such as how to maintain high conductivity and simultaneous high mechanical stability. Possible applications of stretchable and/or flexible electrodes using these nanodimensional materials are summarized at the end of this review.

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Modulation of the exfoliated graphene work function through cycloaddition of nitrile imines

1,3-Dipolar cycloaddition between nitrile imines and graphene is studied. The work function of functionalized-graphene depends on the nature of functionalization.

Work function-tunable transparent electrodes based on all graphene-based materials for organic–graphene photodetectors

A facile method was developed for the doping of graphene nanosheets grown via chemical vapor deposition (CVD) for all graphene-based organic hybrid devices.

Minimizing electrode edge in organic transistors with ultrathin reduced graphene oxide for improving charge injection efficiency

High charge injection efficiency in an organic transistor is realized by minimizing the electrode edge with ultrathin (about 3 nm) reduced graphene oxide.

Atomically-thin molecular layers for electrode modification of organic transistors

Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm(2) V(-1) s(-1) and electron mobility of 0.17 cm(2) V(-1) s(-1) in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs.

Sodium-Ion Intercalated Transparent Conductors with Printed Reduced Graphene Oxide Networks

In this work, we report for the first time that Na-ion intercalation of reduced graphene oxide (RGO) can significantly improve its printed network's performance as a transparent conductor. Unlike pristine graphene that inhibits Na-ion intercalation, the larger layer-layer distance of RGO allows Na-ion intercalation, leading to simultaneously much higher DC conductivity and higher optical transmittance. The typical increase of transmittance from 36% to 79% and decrease of sheet resistance from 83k to 311 Ohms/sq in the printed network was observed after Na-ion intercalation. Compared with Li-intercalated graphene, Na-ion intercalated RGO shows much better environmental stability, which is likely due to the self-terminating oxidation of Na ions on the RGO edges. This study demonstrated the great potential of metal-ion intercalation to improve the performance of printed RGO network for transparent conductor applications.

Fast and enhanced broadband photoresponse of a ZnO nanowire array/reduced graphene oxide film hybrid photodetector from the visible to the near-infrared range

In the present work, a ZnO nanowire array/reduced graphene oxide film hybrid nanostructure was realized, and the photovoltaic responses from the visible to the near-infrared range were investigated. Compared with the pure ZnO nanowire array and rGO thin film, the hybrid composite exhibited a fast and greatly enhanced broadband photovoltaic response that resulted from the formation of interfacial Schottky junctions between ZnO and rGO.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Surface engineering of reduced graphene oxide for controllable ambipolar flash memories

Tunable charge-trapping behaviors including unipolar charge trapping of one type of charge carrier and ambipolar trapping of both electrons and holes in a complementary manner is highly desirable for low power consumption multibit flash memory design. Here, we adopt a strategy of tuning the Fermi level of reduced graphene oxide (rGO) through self-assembled monolayer (SAM) functionalization and form p-type and n-type doped rGO with a wide range of manipulation on work function. The functionalized rGO can act as charge-trapping layer in ambipolar flash memories, and a dramatic transition of charging behavior from unipolar trapping of electrons to ambipolar trapping and eventually to unipolar trapping of holes was achieved. Adjustable hole/electron injection barriers induce controllable Vth shift in the memory transistor after programming operation. Finally, we transfer the ambipolar memory on flexible substrates and study their charge-trapping properties at various bending cycles. The SAM-functionalized rGO can be a promising candidate for next-generation nonvolatile memories.

Synthesis and characterization of a quaternary nanocomposite based on TiO2/CdS/rGO/Pt and its application in the photoreduction of CO2 to methane under visible light

”Together we are stronger”: For the first time, TiO₂/CdS/rGO/Pt nanocomposite was used as a catalyst for the photocatalytic reduction of CO₂ to CH₄.

Doping graphene with an atomically thin two dimensional molecular layer

Atomically thin and chemically versatile GO sheets are used as p-type dopants of CVD-graphene. This method enables the strong, stable, large-scale, low-temperature, and controllable p-doping of graphene with preserved charge mobility, intrinsic roughness, and transmittance.

Inverse transfer method using polymers with various functional groups for controllable graphene doping

The polymer-supported transfer of chemical vapor deposition (CVD)-grown graphene provides large-area and high-quality graphene on a target substrate; however, the polymer and organic solvent residues left by the transfer process hinder the application of CVD-grown graphene in electronic and photonic devices. Here, we describe an inverse transfer method (ITM) that permits the simultaneous transfer and doping of graphene without generating undesirable residues by using polymers with different functional groups. Unlike conventional wet transfer methods, the polymer supporting layer used in the ITM serves as a graphene doping layer placed at the interface between the graphene and the substrate. Polymers bearing functional groups can induce n-doping or p-doping into the graphene depending on the electron-donating or -withdrawing characteristics of functional groups. Theoretical models of dipole layer-induced graphene doping offered insights into the experimentally measured change in the work function and the Dirac point of the graphene. Finally, the electrical properties of pentacene field effect transistors prepared using graphene electrodes could be enhanced by employing the ITM to introduce a polymer layer that tuned the work function of graphene. The versatility of polymer functional groups suggests that the method developed here will provide valuable routes to the development of applications of CVD-grown graphene in organic electronic devices.

Work Function Engineering of Graphene

Graphene is a two dimensional one atom thick allotrope of carbon that displays unusual crystal structure, electronic characteristics, charge transport behavior, optical clarity, physical & mechanical properties, thermal conductivity and much more that is yet to be discovered. Consequently, it has generated unprecedented excitement in the scientific community; and is of great interest to wide ranging industries including semiconductor, optoelectronics and printed electronics. Graphene is considered to be a next-generation conducting material with a remarkable band-gap structure, and has the potential to replace traditional electrode materials in optoelectronic devices. It has also been identified as one of the most promising materials for post-silicon electronics. For many such applications, modulation of the electrical and optical properties, together with tuning the band gap and the resulting work function of zero band gap graphene are critical in achieving the desired properties and outcome. In understanding the importance, a number of strategies including various functionalization, doping and hybridization have recently been identified and explored to successfully alter the work function of graphene. In this review we primarily highlight the different ways of surface modification, which have been used to specifically modify the band gap of graphene and its work function. This article focuses on the most recent perspectives, current trends and gives some indication of future challenges and possibilities.

Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide

Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.

Built-in water resistance in organic transistors modified with self-assembled monolayers

We systematically investigated the effects of a self-assembled monolayer (SAM), prepared on the gate dielectric, on the performances of bottom-gate organic field-effect transistor (OFET) devices under various humid environments.