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Li J, Zhang J, Chu J, Yang L, Zhao X, Zhang Y, Liu T, Lu Y, Chen C, Hou X, Fang L, Xu Y, Wang J, Zhang K. Tailoring the epitaxial growth of oriented Te nanoribbon arrays. iScience 2023; 26:106177. [PMID: 36895655 PMCID: PMC9988655 DOI: 10.1016/j.isci.2023.106177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 01/13/2023] [Accepted: 02/07/2023] [Indexed: 02/11/2023] Open
Abstract
As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm2 V-1 s-1 and 1.5×105, respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.
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Affiliation(s)
- Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Junwei Chu
- Xi'an Institute of Applied Optics, No.9, West Section of Electron Third Road, Shannxi Xi'an 710065, China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Xinxin Zhao
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230031, China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Tong Liu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yang Lu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Xingang Hou
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Long Fang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,College of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot 010051, China
| | - Yijun Xu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Junyong Wang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
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Wang B, Wang J, Niu X. Growth mechanism and self-polarization of bilayer InSb (111) on Bi (001) substrate. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:335001. [PMID: 35675806 DOI: 10.1088/1361-648x/ac7700] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Accepted: 06/08/2022] [Indexed: 06/15/2023]
Abstract
Polarity introduced by inversion symmetry broken along <111> direction has strong impacts on the physical properties and morphological characteristics of III-V component nanostructure. Take III-V component semiconductor InSb as an example, we systematically investigate the growth sequence and morphology evolution of InSb (111) on Bi (001) substrate from adatoms to bilayers. We discovered and verified that the presence of amorphous-like morphology of monolayer InSb was attributed to the strong interaction between mix-polarity InSb and Bi substrate. Further, our comprehensive energy investigations of bilayer InSb reveal that an amorphous first layer will be crystallized and polarized driven by the low surface energy of the reconstructed second layers. Phase diagrams were developed to describe the ongoing polarization process of bilayer InSb under various chemical environments as a function of deposition time. The growth mechanism and polarity phase diagram of bilayer InSb on Bi substrate may advance the progress of polarity controllable growth of low-dimensional InSb nanostructure as well as other polar III-V compound semiconductors.
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Affiliation(s)
- Bojun Wang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, People's Republic of China
| | - Jianwei Wang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, People's Republic of China
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, People's Republic of China
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Saraswathy Vilasam AG, Prasanna PK, Yuan X, Azimi Z, Kremer F, Jagadish C, Chakraborty S, Tan HH. Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3395-3403. [PMID: 34985872 DOI: 10.1021/acsami.1c19236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The epitaxial growth of III-V nanowires with excellent optoelectronic properties on low-cost, light-weight, and flexible substrates is a key step for the design and engineering of future optoelectronic devices. In our study, GaAs nanowires were grown on synthetic mica, a two-dimensional layered material, via vapor-liquid-solid growth using metal-organic chemical vapor deposition. The effect of basic epitaxial growth parameters such as temperature and V/III ratio on the vertical yield of the nanowires is investigated. A vertical yield of over 60% is achieved at an optimum growth temperature of 400 °C and a V/III ratio 18. The structural properties of the nanowires are investigated using various techniques including scanning electron microscopy, high-resolution transmission electron microscopy, and high-angle annular dark-field imaging. The vertical nanowires grown at a low temperature and a high V/III ratio are found to have a zincblende phase with a [111] B polarity. The optical properties are investigated by photoluminescence (PL) and time-resolved PL measurements. First-principles electronic structure calculations within the framework of density functional theory elucidate the van der Waals nature of the nanowire/mica interface. Our results also show that these nanowires can be easily lifted off the bulk 2D mica template, providing a pathway for flexible nanowire devices.
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Affiliation(s)
- Aswani Gopakumar Saraswathy Vilasam
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ponnappa Kechanda Prasanna
- Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute (HRI) Allahabad, HBNI, Chhatnag Road, Jhunsi, Prayagraj (Allahabad) 211 019, India
| | - Xiaoming Yuan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, China
| | - Zahra Azimi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Felipe Kremer
- Centre for Advanced Microscopy, The Australian National University Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sudip Chakraborty
- Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute (HRI) Allahabad, HBNI, Chhatnag Road, Jhunsi, Prayagraj (Allahabad) 211 019, India
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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4
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Maliakkal CB, Jacobsson D, Tornberg M, Dick KA. Post-nucleation evolution of the liquid-solid interface in nanowire growth. NANOTECHNOLOGY 2021; 33:105607. [PMID: 34847548 DOI: 10.1088/1361-6528/ac3e8d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2021] [Accepted: 11/30/2021] [Indexed: 06/13/2023]
Abstract
We study usingin situtransmission electron microscopy the birth of GaAs nanowires from liquid Au-Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 〈111〉 or the equivalent wurtzite〈0001〉 direction. This growth direction(s) is what is typically observed in most III-V and II-VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recorded shortly after the nucleation of nanowires, we argue that the lower catalyst droplet-nanowire interface energy of the {111} facet when zincblende (or the equivalent {0001} facet in wurtzite) is the reason for this direction selectivity in nanowires.
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Affiliation(s)
- Carina B Maliakkal
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- Solid State Physics, Lund University, Box 118, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
| | - Daniel Jacobsson
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
- National Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100, Lund, Sweden
| | - Marcus Tornberg
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
| | - Kimberly A Dick
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
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5
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Li Z, Trendafilov S, Zhang F, Allen MS, Allen JW, Dev SU, Pan W, Yu Y, Gao Q, Yuan X, Yang I, Zhu Y, Bhat A, Peng SX, Lei W, Tan HH, Jagadish C, Fu L. Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging. NANO LETTERS 2021; 21:7388-7395. [PMID: 34424703 DOI: 10.1021/acs.nanolett.1c02777] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Highly compact, filter-free multispectral photodetectors have important applications in biological imaging, face recognition, and remote sensing. In this work, we demonstrate room-temperature wavelength-selective multipixel photodetectors based on GaAs0.94Sb0.06 nanowire arrays grown by metalorganic vapor phase epitaxy, providing more than 10 light detection channels covering both visible and near-infrared ranges without using any optical filters. The nanowire array geometry-related tunable spectral photoresponse has been demonstrated both theoretically and experimentally and shown to be originated from the strong and tunable resonance modes that are supported in the GaAsSb array nanowires. High responsivity and detectivity (up to 44.9 A/W and 1.2 × 1012 cm √Hz/W at 1 V, respectively) were obtained from the array photodetectors, enabling high-resolution RGB color imaging by applying such a nanowire array based single pixel imager. The results indicate that our filter-free wavelength-selective GaAsSb nanowire array photodetectors are promising candidates for the development of future high-quality multispectral imagers.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Simeon Trendafilov
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Florida 32542, United States
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Monica S Allen
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Florida 32542, United States
| | - Jeffery W Allen
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Florida 32542, United States
| | - Sukrith U Dev
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Florida 32542, United States
| | - Wenwu Pan
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA 6009, Australia
| | - Yang Yu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Inseok Yang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Advanced LED Development Group, Device Solutions, Samsung Electronics Co. Ltd., Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Yi Zhu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Anha Bhat
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Sherry X Peng
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Wen Lei
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA 6009, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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6
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Trendafilov S, Allen JW, Allen MS, Dev SU, Li Z, Fu L, Jagadish C. Light Absorption in Nanowire Photonic Crystal Slabs and the Physics of Exceptional Points: The Shape Shifter Modes. SENSORS 2021; 21:s21165420. [PMID: 34450862 PMCID: PMC8402231 DOI: 10.3390/s21165420] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Revised: 08/04/2021] [Accepted: 08/09/2021] [Indexed: 11/30/2022]
Abstract
Semiconductor nanowire arrays have been demonstrated as promising candidates for nanoscale optoelectronics applications due to their high detectivity as well as tunable photoresponse and bandgap over a wide spectral range. In the infrared (IR), where these attributes are more difficult to obtain, nanowires will play a major role in developing practical devices for detection, imaging and energy harvesting. Due to their geometry and periodic nature, vertical nanowire and nanopillar devices naturally lend themselves to waveguide and photonic crystal mode engineering leading to multifunctional materials and devices. In this paper, we computationally develop theoretical basis to enable better understanding of the fundamental electromagnetics, modes and couplings that govern these structures. Tuning the photonic response of a nanowire array is contingent on manipulating electromagnetic power flow through the lossy nanowires, which requires an intimate knowledge of the photonic crystal modes responsible for the power flow. Prior published work on establishing the fundamental physical modes involved has been based either on the modes of individual nanowires or numerically computed modes of 2D photonic crystals. We show that a unified description of the array key electromagnetic modes and their behavior is obtainable by taking into account modal interactions that are governed by the physics of exceptional points. Such models that describe the underlying physics of the photoresponse of nanowire arrays will facilitate the design and optimization of ensembles with requisite performance. Since nanowire arrays represent photonic crystal slabs, the essence of our results is applicable to arbitrary lossy photonic crystals in any frequency range.
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Affiliation(s)
- Simeon Trendafilov
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Valparaiso, FL 32542, USA; (S.T.); (M.S.A.); (S.U.D.)
| | - Jeffery W. Allen
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Valparaiso, FL 32542, USA; (S.T.); (M.S.A.); (S.U.D.)
- Correspondence:
| | - Monica S. Allen
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Valparaiso, FL 32542, USA; (S.T.); (M.S.A.); (S.U.D.)
| | - Sukrith U. Dev
- Air Force Research Laboratory, Munitions Directorate, Eglin AFB, Valparaiso, FL 32542, USA; (S.T.); (M.S.A.); (S.U.D.)
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia; (Z.L.); (L.F.); (C.J.)
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia; (Z.L.); (L.F.); (C.J.)
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia; (Z.L.); (L.F.); (C.J.)
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7
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Wang N, Wong WW, Yuan X, Li L, Jagadish C, Tan HH. Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100263. [PMID: 33856732 DOI: 10.1002/smll.202100263] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Revised: 03/08/2021] [Indexed: 06/12/2023]
Abstract
There is a strong demand for III-V nanostructures of different geometries and in the form of interconnected networks for quantum science applications. This can be achieved by selective area epitaxy (SAE) but the understanding of crystal growth in these complicated geometries is still insufficient to engineer the desired shape. Here, the shape evolution and crystal structure of InP nanostructures grown by SAE on InP substrates of different orientations are investigated and a unified understanding to explain these observations is established. A strong correlation between growth direction and crystal phase is revealed. Wurtzite (WZ) and zinc-blende (ZB) phases form along <111>A and <111>B directions, respectively, while crystal phase remains the same along other low-index directions. The polarity induced crystal structure difference is explained by thermodynamic difference between the WZ and ZB phase nuclei on different planes. Growth from the openings is essentially determined by pattern confinement and minimization of the total surface energy, regardless of substrate orientations. A novel type-II WZ/ZB nanomembrane homojunction array is obtained by tailoring growth directions through alignment of the openings along certain crystallographic orientations. The understanding in this work lays the foundation for the design and fabrication of advanced III-V semiconductor devices based on complex geometrical nanostructures.
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Affiliation(s)
- Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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8
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Oh SH, Kim Y. Cubic ZnP 2 nanowire growth catalysed by bismuth. CrystEngComm 2021. [DOI: 10.1039/d1ce00029b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The ZnP2 nanowires catalysed by bismuth had a cubic γ-ZnP2 structure, which is known to be stable only at pressures higher than 1.5 GPa, and its existence is a matter of debate.
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Affiliation(s)
| | - Yong Kim
- Department of Physics
- Dong-A University
- Sahagu
- Korea
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9
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Zeng H, Yu X, Fonseka HA, Boras G, Jurczak P, Wang T, Sanchez AM, Liu H. Preferred growth direction of III-V nanowires on differently oriented Si substrates. NANOTECHNOLOGY 2020; 31:475708. [PMID: 32885789 DOI: 10.1088/1361-6528/abafd7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
One of the nanowire (NW) characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs NWs. We first studied the self-catalyzed GaAs NW growth on Si (111) and Si (001) substrates. SEM observations show GaAs NWs on Si (001) are grown along four <111> directions without preference on one or some of them. This non-preferential NW growth on Si (001) is morphologically in contrast to the extensively reported vertical <111> preferred GaAs NW growth on Si (111) substrates. We propose a model based on the initial condition of an ideal Ga droplet formation on Si substrates and the surface free energy calculation which takes into account the dangling bond surface density for different facets. This model provides further understanding of the different preferences in the growth of GaAs NWs along selected <111> directions depending on the Si substrate orientation. To verify the prevalence of the model, NWs were grown on Si (311) substrates. The results are in good agreement with the three-dimensional mapping of surface free energy by our model. This general model can also be applied to predictions of NW preferred growth directions by the vapor-liquid-solid growth mode on other group IV and III-V substrates.
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Affiliation(s)
- Haotian Zeng
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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10
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Yeu IW, Han G, Hwang CS, Choi JH. An ab initio approach on the asymmetric stacking of GaAs 〈111〉 nanowires grown by a vapor-solid method. NANOSCALE 2020; 12:17703-17714. [PMID: 32608427 DOI: 10.1039/d0nr02010a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This study provides an ab initio thermodynamics approach to take a step forward in the theoretical modeling on the growth of GaAs nanowires. In order to understand the effects of growth conditions on the involvement of stacking faults and polytypism, we investigated the vapor-phase growth kinetics under arbitrary temperature-pressure conditions by combining the atomic-scale calculation with the thermodynamic treatment of a vapor-solid system. Considering entropy contribution and electronic energy, the chemical potential and surface energies of various reconstructions were calculated as a function of temperature and pressure, leading to the prediction of the change in Gibbs free energy at each stage of nucleation and growth. This enabled us to predict the temperature-pressure-dependent variation in nucleation rate and formation probability of possible stacking sequences: zinc blende, stacking faults, twin, and wurtzite. As a result, the formation probabilities of stacking faults and polytypism were found to decrease with increasing temperature or decreasing pressure, which agreed well with available experiments. In addition, by showing that the formation probability of the stacking defects in GaAs nanowires grown along the 〈111〉B direction is about ten times higher than that along the 〈111〉A direction, the intriguing asymmetric stacking behavior during the growth along the polar direction and its dependence on growth conditions were fundamentally elucidated. The proposed ab initio approach bridges the gap between atomic-scale static calculation at zero-temperature and kinetic growth process under arbitrary vapor-phase conditions, and thus will contribute to the nanoscale growth not only for GaAs nanowires but also for other materials.
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Affiliation(s)
- In Won Yeu
- Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 02792, Korea.
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11
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Zamani M, Imbalzano G, Tappy N, Alexander DTL, Martí-Sánchez S, Ghisalberti L, Ramasse QM, Friedl M, Tütüncüoglu G, Francaviglia L, Bienvenue S, Hébert C, Arbiol J, Ceriotti M, Fontcuberta I Morral A. 3D Ordering at the Liquid-Solid Polar Interface of Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2001030. [PMID: 32762011 DOI: 10.1002/adma.202001030] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2020] [Revised: 06/29/2020] [Indexed: 06/11/2023]
Abstract
The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic thermodynamics, neglecting the atomistic nature of the liquid-solid interface. Here, experimental observations and molecular dynamics simulations are employed to identify the 3D nature of an atomic-scale ordering of liquid Ga in contact with solid GaAs in a nanowire growth configuration. An interplay between the liquid ordering and the formation of a new bilayer is revealed, which, contrary to the established theories, suggests that the preference for a certain polarity and polytypism is influenced by the atomic structure of the interface. The conclusions of this work open new avenues for the understanding of crystal growth, as well as other processes and systems involving a liquid-solid interface.
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Affiliation(s)
- Mahdi Zamani
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Giulio Imbalzano
- Laboratory of Computational Science and Modeling, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Nicolas Tappy
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Duncan T L Alexander
- Electron Spectrometry and Microscopy Laboratory, Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
- Interdisciplinary Centre for Electron Microscopy (CIME), École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain
| | - Lea Ghisalberti
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Quentin M Ramasse
- SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury, WA4 4AD, UK
- School of Chemical and Process Engineering and School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, UK
| | - Martin Friedl
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Gözde Tütüncüoglu
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Luca Francaviglia
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Sebastien Bienvenue
- Laboratory of Computational Science and Modeling, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Cécile Hébert
- Electron Spectrometry and Microscopy Laboratory, Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona, Catalonia, 08010, Spain
| | - Michele Ceriotti
- Laboratory of Computational Science and Modeling, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
- Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, EPFL, Lausanne, 1015, Switzerland
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12
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Wong-Leung J, Yang I, Li Z, Karuturi SK, Fu L, Tan HH, Jagadish C. Engineering III-V Semiconductor Nanowires for Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1904359. [PMID: 31621966 DOI: 10.1002/adma.201904359] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2019] [Revised: 08/19/2019] [Indexed: 05/26/2023]
Abstract
III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.
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Affiliation(s)
- Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Inseok Yang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Siva Krishna Karuturi
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
- Research School of Electrical, Energy and Materials Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
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13
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Wu S, Wu S, Song W, Wang L, Yi X, Liu Z, Wang J, Li J. Crystal phase evolution in kinked GaN nanowires. NANOTECHNOLOGY 2020; 31:145713. [PMID: 31860878 DOI: 10.1088/1361-6528/ab6479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Seed-catalysed growth has been proved to be an ideal method to selectively tune the crystal structure of III-V nanowires along its growth axis. However, few results on relevant nitride NWs have been reported. In this study, we demonstrate the growth of epitaxial kinked wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW arrays under the oxygen rich condition using hydride vapour-liquid-solid vapour phase epitaxy (VLS-HVPE). The typical GaN crystal includes WZ and ZB phases throughout the whole NW structure. A detailed structural analysis indicates that a stacking faults free zone was occasionally observed near the NW tips and in the relatively long kinked 〈11-23〉 directions segments (>200 nm). Furthermore, some NWs (<5%) develop phase boundaries, resulting in kinking and crystal phase evolution. A layer-by-layer growth mode was proposed to explain the crystal phase evolution along the phase boundaries. This study provides new insights into the controlled growth of wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW.
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Affiliation(s)
- Shaoteng Wu
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
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14
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Gao H, Sun Q, Sun W, Tan HH, Jagadish C, Zou J. Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires. NANO LETTERS 2019; 19:8262-8269. [PMID: 31661618 DOI: 10.1021/acs.nanolett.9b03835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Understanding the effect of a catalyst on the growth of nanowires is crucial for their controllable synthesis. In this study, we report the growth of InGaP nanowires induced by different-sized Au catalysts by metal-organic chemical vapor deposition. Through electron microscopy characterization, two types of InGaP nanowires are identified, and the difference in catalyst size is shown to cause their different morphological, structural, and compositional characteristics. Furthermore, the influencing mechanism of catalyst size on the formation of hierarchical structures in nanowires is discussed. This study provides an insight for a better understanding of the growth of ternary nanowires, especially the effect of catalyst size, which can be a promising approach to control the ternary nanowire growth, and is therefore beneficial for the design of the corresponding nanowire-based device.
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Affiliation(s)
| | | | | | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
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15
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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16
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Ren D, Ahtapodov L, van Helvoort ATJ, Weman H, Fimland BO. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications. NANOTECHNOLOGY 2019; 30:294001. [PMID: 30917343 DOI: 10.1088/1361-6528/ab13ed] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.
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Affiliation(s)
- Dingding Ren
- Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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17
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Ghisalberti L, Potts H, Friedl M, Zamani M, Güniat L, Tütüncüoglu G, Carter WC, Morral AFI. Questioning liquid droplet stability on nanowire tips: from theory to experiment. NANOTECHNOLOGY 2019; 30:285604. [PMID: 30916044 DOI: 10.1088/1361-6528/ab139c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Liquid droplets sitting on nanowire (NW) tips constitute the starting point of the vapor-liquid-solid method of NW growth. Shape and volume of the droplet have been linked to a variety of growth phenomena ranging from the modification of growth direction, NW orientation, crystal phase, and even polarity. In this work we focus on numerical and theoretical analysis of the stability of liquid droplets on NW tips, explaining the peculiarity of this condition with respect to the wetting of planar surfaces. We highlight the role of droplet pinning at the tip in engineering the contact angle. Experimental results on the characteristics of In droplets of variable volume sitting on the tips or side facets of InAs NWs are also provided. This work contributes to the fundamental understanding of the nature of droplets contact angle at the tip of NWs and to the improvement of the engineering of such nanostructures.
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Affiliation(s)
- Lea Ghisalberti
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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18
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Zamani RR, Arbiol J. Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy. NANOTECHNOLOGY 2019; 30:262001. [PMID: 30812017 DOI: 10.1088/1361-6528/ab0b0a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact on our understanding of materials science, especially in the field of semiconductor one-dimensional (1D) nanostructures. Recent advancements in TEM instrumentation, in particular aberration correction and monochromation, have enabled pioneering experiments in complex nanostructure material systems. This review aims to address these understandings through the applications of the methodology for semiconductor nanostructures. It points out various electron microscopy techniques, in particular scanning TEM (STEM) imaging and spectroscopy techniques, with their already-employed or potential applications on 1D nanostructured semiconductors. We keep the main focus of the paper on the electronic and optoelectronic properties of such semiconductors, and avoid expanding it further. In the first part of the review, we give a brief introduction to each of the STEM-based techniques, without detailed elaboration, and mention the recent technological and conceptual developments which lead to novel characterization methodologies. For further reading, we refer the audience to a handful of papers in the literature. In the second part, we highlight the recent examples of application of the STEM methodology on the 1D nanostructure semiconductor materials, especially III-V, II-V, and group IV bare and heterostructure systems. The aim is to address the research questions on various physical properties and introduce solutions by choosing the appropriate technique that can answer the questions. Potential applications will also be discussed, the ones that have already been used for bulk and 2D materials, and have shown great potential and promise for 1D nanostructure semiconductors.
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Affiliation(s)
- Reza R Zamani
- Department of Physics, Chalmers University of Technology, Gothenburg, SE-41296, Sweden. Interdisciplinary Centre for Electron Microscopy (CIME), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland
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19
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de la Mata M, Zamani RR, Martí-Sánchez S, Eickhoff M, Xiong Q, Fontcuberta I Morral A, Caroff P, Arbiol J. The Role of Polarity in Nonplanar Semiconductor Nanostructures. NANO LETTERS 2019; 19:3396-3408. [PMID: 31039314 DOI: 10.1021/acs.nanolett.9b00459] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e.g., electronic or photonic) and morphological features (e.g., shape, growth direction, and so forth) also strongly depend on the polarity. It has been observed that nanoscale materials tend to grow with a specific polarity, which can eventually be reversed for very specific growth conditions. In addition, polar-directed growth affects the defect density and topology and might induce eventually the formation of undesirable polarity inversion domains in the nanostructure, which in turn will affect the photonic and electronic final device performance. Here, we present a review on the polarity-driven growth mechanism at the nanoscale, combining our latest investigation with an overview of the available literature highlighting suitable future possibilities of polarity engineering of semiconductor nanostructures. The present study has been extended over a wide range of semiconductor compounds, covering the most commonly synthesized III-V (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb) and II-VI (ZnO, ZnTe, CdS, CdSe, CdTe) nanowires and other free-standing nanostructures (tripods, tetrapods, belts, and membranes). This systematic study allowed us to explore the parameters that may induce polarity-dependent and polarity-driven growth mechanisms, as well as the polarity-related consequences on the physical properties of the nanostructures.
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Affiliation(s)
- María de la Mata
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona, Catalonia , Spain
| | - Reza R Zamani
- Interdisciplinary Center for Electron Microscopy, CIME , École Polytechnique Fédérale de Lausanne (EPFL) , 1015 Lausanne , Switzerland
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona, Catalonia , Spain
| | - Martin Eickhoff
- Institute of Solid State Physics , University of Bremen , 28359 Bremen , Germany
| | - Qihua Xiong
- School of Physical and Mathematical Sciences , Nanyang Technological University , 637371 Singapore
| | | | - Philippe Caroff
- Microsoft Quantum Lab Delft, Delft University of Technology , 2600 GA Delft , The Netherlands
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona, Catalonia , Spain
- ICREA , Pg. Lluís Companys 23 , 08010 Barcelona, Catalonia , Spain
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20
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Güniat L, Martí-Sánchez S, Garcia O, Boscardin M, Vindice D, Tappy N, Friedl M, Kim W, Zamani M, Francaviglia L, Balgarkashi A, Leran JB, Arbiol J, Fontcuberta I Morral A. III-V Integration on Si(100): Vertical Nanospades. ACS NANO 2019; 13:5833-5840. [PMID: 31038924 DOI: 10.1021/acsnano.9b01546] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
III-V integration on Si(100) is a challenge: controlled vertical vapor liquid solid nanowire growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs vertical nanostructure on Si(100), coined nanospade, obtained by a nonconventional droplet catalyst pinning. The Ga droplet is positioned at the tip of an ultrathin Si pillar with a radial oxide envelope. The pinning at the Si/oxide interface allows the engineering of the contact angle beyond the Young-Dupré equation and the growth of vertical nanospades. Nanospades exhibit a virtually defect-free bicrystalline nature. Our growth model explains how a pentagonal twinning event at the initial stages of growth provokes the formation of the nanospade. The optical properties of the nanospades are consistent with the high crystal purity, making these structures viable for use in integration of optoelectronics on the Si(100) platform.
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Affiliation(s)
- Lucas Güniat
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona , Catalonia , Spain
| | - Oscar Garcia
- UPC - Universitat Politècnica de Catalunya , Calle Jordi Girona, 1-3 , 08034 Barcelona , Spain
| | - Mégane Boscardin
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - David Vindice
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Nicolas Tappy
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Martin Friedl
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Wonjong Kim
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Mahdi Zamani
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Luca Francaviglia
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Akshay Balgarkashi
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Jean-Baptiste Leran
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona , Catalonia , Spain
- ICREA , Pg. Lluís Companys 23 , 08010 Barcelona , Catalonia , Spain
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
- Institute of Physics , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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21
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Güniat L, Caroff P, Fontcuberta I Morral A. Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions. Chem Rev 2019; 119:8958-8971. [PMID: 30998006 DOI: 10.1021/acs.chemrev.8b00649] [Citation(s) in RCA: 82] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspective. Starting with the discovery of VLS, we feature the variety of structures and materials that can be synthesized in the nanowire form. We then move on to establish distinct features such as the three-dimensional heterostructure/doping design and polytypism. We summarize the status quo of the growth mechanisms, recently confirmed by in situ electron microscopy experiments and defining common ground between the different synthesis techniques. We then propose a selection of remaining defects, starting from what we know and going toward what is still to be learned. We believe this review will serve as a reference for neophytes but also as an insight for experts in an effort to bring open questions under a new light.
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Affiliation(s)
- Lucas Güniat
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Philippe Caroff
- Microsoft Quantum Lab Delft , Delft University of Technology , 2600 GA Delft , The Netherlands
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland.,Institute of Physics , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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22
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Lehmann S, Wallentin J, Mårtensson EK, Ek M, Deppert K, Dick KA, Borgström MT. Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires. NANO LETTERS 2019; 19:2723-2730. [PMID: 30888174 DOI: 10.1021/acs.nanolett.9b01007] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The opportunity to engineer III-V nanowires in wurtzite and zinc blende crystal structure allows for exploring properties not conventionally available in the bulk form as well as opening the opportunity for use of additional degrees of freedom in device fabrication. However, the fundamental understanding of the nature of polytypism in III-V nanowire growth is still lacking key ingredients to be able to connect the results of modeling and experiments. Here we show InP nanowires of both pure wurtzite and pure zinc blende grown simultaneously on the same InP [100]-oriented substrate. We find wurtzite nanowires to grow along [Formula: see text] and zinc blende counterparts along [Formula: see text]. Further, we discuss the nucleation, growth, and polytypism of our nanowires against the background of existing theory. Our results demonstrate, first, that the crystal growth conditions for wurtzite and zinc blende nanowire growth are not mutually exclusive and, second, that the interface energies predominantly determine the crystal structure of the nanowires.
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Affiliation(s)
- Sebastian Lehmann
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
| | - Jesper Wallentin
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
- Synchrotron Radiation Research and NanoLund , Box 118, S-221 00 Lund , Sweden
| | - Erik K Mårtensson
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
| | - Martin Ek
- Centre for Analysis and Synthesis , Lund University , Box 124, 221 00 , Lund , Sweden
| | - Knut Deppert
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
| | - Kimberly A Dick
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
- Centre for Analysis and Synthesis , Lund University , Box 124, 221 00 , Lund , Sweden
| | - Magnus T Borgström
- Solid State Physics and NanoLund , Lund University , Box 118, S-221 00 Lund , Sweden
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23
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Francaviglia L, Tütüncüoglu G, Matteini F, Morral AFI. Tuning adatom mobility and nanoscale segregation by twin formation and polytypism. NANOTECHNOLOGY 2019; 30:054006. [PMID: 30517084 DOI: 10.1088/1361-6528/aaefdd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Nanoscale variations in the composition of an Al x Ga1-x As shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crystal phase and/or nanoscale adatom mobility. By applying electron-microscopy-related techniques we correlate the optical, compositional and structural properties at the nanoscale on the same object. The results indicate a clear correlation between the twin density in the nanowire and the quantum-emitter density as well as a significant redshift in the emission. We propose that twinning increases nanoscale segregation effects in ternary alloys. An additional redshift in the emission can be explained by the staggered band alignment between wurtzite and zinc-blende phases. This work opens new avenues in the achievement of homogeneous ternary and quaternary alloys in nanowires and in the engineering of the segregation effects at the nanoscale.
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Affiliation(s)
- Luca Francaviglia
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Koivusalo ES, Hakkarainen TV, Galeti HVA, Gobato YG, Dubrovskii VG, Guina MD. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires. NANO LETTERS 2019; 19:82-89. [PMID: 30537843 DOI: 10.1021/acs.nanolett.8b03365] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The typical vapor-liquid-solid growth of nanowires is restricted to a vertical one-dimensional geometry, while there is a broad interest for more complex structures in the context of electronics and photonics applications. Controllable switching of the nanowire growth direction opens up new horizons in the bottom-up engineering of self-assembled nanostructures, for example, to fabricate interconnected nanowires used for quantum transport measurements. In this work, we demonstrate a robust and highly controllable method for deterministic switching of the growth direction of self-catalyzed GaAs nanowires. The method is based on the modification of the droplet-nanowire interface in the annealing stage without any fluxes and subsequent growth in the horizontal direction by a twin-mediated mechanism with indications of a novel type of interface oscillations. A 100% yield of switching the nanowire growth direction from vertical to horizontal is achieved by systematically optimizing the growth parameters. A kinetic model describing the competition of different interface structures is introduced to explain the switching mechanism and the related nanowire geometries. The model also predicts that the growth of similar structures is possible for all vapor-liquid-solid nanowires with commonly observed truncated facets at the growth interface.
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Affiliation(s)
- Eero S Koivusalo
- Optoelectronics Research Centre , Tampere University of Technology , P.O. Box 692, Tampere 33101 , Finland
| | - Teemu V Hakkarainen
- Optoelectronics Research Centre , Tampere University of Technology , P.O. Box 692, Tampere 33101 , Finland
| | - Helder V A Galeti
- Electrical Engineering Department , Federal University of São Carlos , São Carlos , São Paulo 13565-905 , Brazil
| | - Yara G Gobato
- Physics Department , Federal University of São Carlos , São Carlos , São Paulo 13565-905 , Brazil
| | | | - Mircea D Guina
- Optoelectronics Research Centre , Tampere University of Technology , P.O. Box 692, Tampere 33101 , Finland
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25
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Macroscopic Chiral Recognition by Calix[4]arene‐Based Host–Guest Interactions. Chemistry 2018; 24:15502-15506. [DOI: 10.1002/chem.201803564] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/11/2018] [Revised: 07/30/2018] [Indexed: 01/12/2023]
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26
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Zamani M, Tütüncüoglu G, Martí-Sánchez S, Francaviglia L, Güniat L, Ghisalberti L, Potts H, Friedl M, Markov E, Kim W, Leran JB, Dubrovskii VG, Arbiol J, Fontcuberta I Morral A. Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality. NANOSCALE 2018; 10:17080-17091. [PMID: 30179246 DOI: 10.1039/c8nr05787g] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. Polarity engineering provides an additional pathway to modulate the structural and optical properties of semiconductor nanowires. In this work, we demonstrate for the first time the growth of Ga-assisted GaAs nanowires with (111)A-polarity, with a yield of up to ∼50%. This goal is achieved by employing highly Ga-rich conditions which enable proper engineering of the energies of A and B-polar surfaces. We also show that A-polarity growth suppresses the stacking disorder along the growth axis. This results in improved optical properties, including the formation of AlGaAs quantum dots with two orders or magnitude higher brightness. Overall, this work provides new grounds for the engineering of nanowire growth directions, crystal quality and optical functionality.
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Affiliation(s)
- Mahdi Zamani
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne, EPFL, 1015 Lausanne, Switzerland.
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27
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Abstract
Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due to its ideal bandgap and excellent light absorption efficiency. In order to achieve large-scale practical PV applications, further controllability in the NW growth and device fabrication is still needed for the efficiency improvement. This article reviews the recent development in GaAs NW-based PVs with an emphasis on cost-effectively synthesis of GaAs NWs, device design and corresponding performance measurement. We first discuss the available manipulated growth methods of GaAs NWs, such as the catalytic vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) epitaxial growth, followed by the catalyst-controlled engineering process, and typical crystal structure and orientation of resulted NWs. The structure-property relationships are also discussed for achieving the optimal PV performance. At the same time, important device issues are as well summarized, including the light absorption, tunnel junctions and contact configuration. Towards the end, we survey the reported performance data and make some remarks on the challenges for current nanostructured PVs. These results not only lay the ground to considerably achieve the higher efficiencies in GaAs NW-based PVs but also open up great opportunities for the future low-cost smart solar energy harvesting devices.
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28
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Jia S, Hu S, Zheng H, Wei Y, Meng S, Sheng H, Liu H, Zhou S, Zhao D, Wang J. Atomistic Interface Dynamics in Sn-Catalyzed Growth of Wurtzite and Zinc-Blende ZnO Nanowires. NANO LETTERS 2018; 18:4095-4099. [PMID: 29879357 DOI: 10.1021/acs.nanolett.8b00420] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the applications in future advanced nanodevices. In this study, the atomistic vapor-solid-liquid growth processes of Sn-catalyzed wurtzite (WZ) and zinc blende (ZB) ZnO are directly revealed based on the in situ transmission electron microscopy. The growth kinetics of WZ and ZB crystal phases in ZnO appear markedly different in terms of the NW-droplet interface, whereas the nucleation site as determined by the contact angle ϕ between the seed particle and the NW is found to be crucial for tuning the NW structure through combined experimental and theoretical investigations. These results offer an atomic-scale view into the dynamic growth process of ZnO NW, which has implications for the phase-controllable synthesis of II-VI compounds and heterostructures with tunable band structures.
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Affiliation(s)
- Shuangfeng Jia
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Shuaishuai Hu
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - He Zheng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Yanjie Wei
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Shuang Meng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Huaping Sheng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Huihui Liu
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Siyuan Zhou
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Dongshan Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Jianbo Wang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
- Science and Technology on High Strength Structural Materials Laboratory , Central South University , Changsha 410083 , China
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29
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Collar KN, Li J, Jiao W, Kong W, Brown AS. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates. NANOTECHNOLOGY 2018; 29:035604. [PMID: 29186010 DOI: 10.1088/1361-6528/aa9e34] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report on enhanced control of the growth of lateral GaAs nanowires (NWs) embedded in epitaxial (100) GaAsBi thin films enabled by the use of vicinal substrates and the growth-condition dependent role of Bi as a surfactant. Enhanced step-flow growth is achieved through the use of vicinal substrates and yields unidirectional nanowire growth. The addition of Bi during GaAsBi growth enhances Ga adatom diffusion anisotropy and modifies incorporation rates at steps in comparison to GaAs growth yielding lower density but longer NWs. The NWs grown on vicinal substrates grew unidirectionally towards the misorientation direction when Bi was present. The III/V flux ratio significantly impacts the size, shape and density of the resulting NWs. These results suggest that utilizing growth conditions which enhance step-flow growth enable enhanced control of lateral nanostructures.
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Affiliation(s)
- Kristen N Collar
- Department of Physics, Duke University, Durham, NC 27708, United States of America
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30
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Zhang Y, Sun Z, Sanchez AM, Ramsteiner M, Aagesen M, Wu J, Kim D, Jurczak P, Huo S, Lauhon LJ, Liu H. Doping of Self-Catalyzed Nanowires under the Influence of Droplets. NANO LETTERS 2018; 18:81-87. [PMID: 29206466 DOI: 10.1021/acs.nanolett.7b03366] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Controlled and reproducible doping is essential for nanowires (NWs) to realize their functions. However, for the widely used self-catalyzed vapor-liquid-solid (VLS) growth mode, the doping mechanism is far from clear, as the participation of the nanoscale liquid phase makes the doping environment highly complex and significantly different from that of the thin film growth. Here, the doping mechanism of self-catalyzed NWs and the influence of self-catalytic droplets on the doping process are systematically studied using beryllium (Be) doped GaAs NWs. Be atoms are found for the first time to be incorporated into NWs predominantly through the Ga droplet that is observed to be beneficial for setting up thermodynamic equilibrium at the growth front. Be dopants are thus substitutional on Ga sites and redundant Be atoms are accumulated inside the Ga droplets when NWs are saturated, leading to the change of the Ga droplet properties and causing the growth of phase-pure zincblende NWs. This study is an essential step toward the design and fabrication of nanowire devices.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
| | - Zhiyuan Sun
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Ana M Sanchez
- Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom
| | - Manfred Ramsteiner
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Martin Aagesen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen , Universitetsparken 5, 2100 Copenhagen, Denmark
| | - Jiang Wu
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
| | - Dongyoung Kim
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
| | - Pamela Jurczak
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
| | - Suguo Huo
- London Centre for Nanotechnology, University College London , London WC1H 0AH, United Kingdom
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Huiyun Liu
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
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31
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Krizek F, Kanne T, Razmadze D, Johnson E, Nygård J, Marcus CM, Krogstrup P. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis. NANO LETTERS 2017; 17:6090-6096. [PMID: 28895746 DOI: 10.1021/acs.nanolett.7b02604] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism. Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show that all three types of nanocrosses can be transferred undamaged to arbitrary substrates, which allows for structural, compositional, and electrical characterization. We further demonstrate the potential for synthesis of as-grown nanowire networks and for using nanowires as shadow masks for in situ fabricated junctions in radial nanowire heterostructures.
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Affiliation(s)
- Filip Krizek
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Thomas Kanne
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Davydas Razmadze
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Erik Johnson
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
- Department of Wind Energy, Technical University of Denmark , DTU Risø Campus, 4000 Roskilde, Denmark
| | - Jesper Nygård
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Charles M Marcus
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
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32
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Yang Z, Surrente A, Tutuncuoglu G, Galkowski K, Cazaban-Carrazé M, Amaduzzi F, Leroux P, Maude DK, Fontcuberta I Morral A, Plochocka P. Revealing Large-Scale Homogeneity and Trace Impurity Sensitivity of GaAs Nanoscale Membranes. NANO LETTERS 2017; 17:2979-2984. [PMID: 28440658 DOI: 10.1021/acs.nanolett.7b00257] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of molecular beam epitaxy (MBE) grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very high optical quality, expressed by extremely narrow neutral exciton emission, allowing the resolution of the more complex excitonic structure for the first time. Capping of the membranes with an AlGaAs shell results in a strong increase of emission intensity but also in a shift and broadening of the exciton peak. This is attributed to the existence of impurities in the shell, beyond MBE-grade quality, showing the high sensitivity of these structures to the presence of impurities. Finally, emission properties are identical at the submicron and submillimeter scale, demonstrating the potential of these structures for large scale applications.
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Affiliation(s)
- Z Yang
- Laboratoire National des Champs Magnétiques Intenses , CNRS-UGA-UPS-INSA, 143 avenue de Rangueil, 31400 Toulouse, France
| | - A Surrente
- Laboratoire National des Champs Magnétiques Intenses , CNRS-UGA-UPS-INSA, 143 avenue de Rangueil, 31400 Toulouse, France
| | - G Tutuncuoglu
- Laboratory of Semiconductor Material, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - K Galkowski
- Laboratoire National des Champs Magnétiques Intenses , CNRS-UGA-UPS-INSA, 143 avenue de Rangueil, 31400 Toulouse, France
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw , Pasteura 5, 02-093 Warsaw, Poland
| | - M Cazaban-Carrazé
- Laboratoire National des Champs Magnétiques Intenses , CNRS-UGA-UPS-INSA, 143 avenue de Rangueil, 31400 Toulouse, France
| | - F Amaduzzi
- Laboratory of Semiconductor Material, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - P Leroux
- Laboratory of Semiconductor Material, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - D K Maude
- Laboratoire National des Champs Magnétiques Intenses , CNRS-UGA-UPS-INSA, 143 avenue de Rangueil, 31400 Toulouse, France
| | - A Fontcuberta I Morral
- Laboratory of Semiconductor Material, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - P Plochocka
- Laboratoire National des Champs Magnétiques Intenses , CNRS-UGA-UPS-INSA, 143 avenue de Rangueil, 31400 Toulouse, France
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33
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Zamani RR, Gorji Ghalamestani S, Niu J, Sköld N, Dick KA. Polarity and growth directions in Sn-seeded GaSb nanowires. NANOSCALE 2017; 9:3159-3168. [PMID: 28220179 DOI: 10.1039/c6nr09477e] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We here investigate the growth mechanism of Sn-seeded GaSb nanowires and demonstrate how the seed particle and its dynamics at the growth interface of the nanowire determine the polarity, as well as the formation of structural defects. We use aberration-corrected scanning transmission electron microscopy imaging methodologies to study the interrelationship between the structural properties, i.e. polarity, growth mechanism, and formation of inclined twin boundaries in pairs. Moreover, the optical properties of the Sn-seeded GaSb nanowires are examined. Their photoluminescence response is compared with one of their Au-seeded counterparts, suggesting the incorporation of Sn atoms from the seed particles into the nanowires.
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Affiliation(s)
- Reza R Zamani
- Solid State Physics, Lund University, Box 118, Lund 22100, Sweden.
| | | | - Jie Niu
- Solid State Physics, Lund University, Box 118, Lund 22100, Sweden.
| | - Niklas Sköld
- Solid State Physics, Lund University, Box 118, Lund 22100, Sweden.
| | - Kimberly A Dick
- Solid State Physics, Lund University, Box 118, Lund 22100, Sweden. and Centre for Analysis and Synthesis, Lund University, Box 118, Lund 22100, Sweden
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34
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Potts H, Morgan NP, Tütüncüoglu G, Friedl M, Morral AFI. Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets. NANOTECHNOLOGY 2017; 28:054001. [PMID: 28008881 DOI: 10.1088/1361-6528/28/5/054001] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets are formed in situ on InAs(Sb) stems. Their position is modified to promote growth in the 〈11-2〉 or equivalent directions. We also show that indium droplets can be used for the fabrication of InSb insertions in InAsSb nanowires. Our results demonstrate that indium droplets can initiate growth of InAs nanostructures as well as provide added flexibility to nanowire growth, enabling the formation of kinks and heterostructures, and offer a new approach in the growth of defect-free crystals.
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Affiliation(s)
- Heidi Potts
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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35
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Alonso-Orts M, Sánchez AM, Hindmarsh SA, López I, Nogales E, Piqueras J, Méndez B. Shape Engineering Driven by Selective Growth of SnO 2 on Doped Ga 2O 3 Nanowires. NANO LETTERS 2017; 17:515-522. [PMID: 28001409 DOI: 10.1021/acs.nanolett.6b04189] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO2/Ga2O3 complex nanostructures. Ga2O3 nanowires decorated with either crossing SnO2 nanowires or SnO2 particles have been obtained in a single step treatment by thermal evaporation. The reason for this dual behavior is related to the growth direction of trunk Ga2O3 nanowires. Ga2O3 nanowires grown along the [001] direction favor the formation of crossing SnO2 nanowires. Alternatively, SnO2 forms rhombohedral particles on [110] Ga2O3 nanowires leading to skewer-like structures. These complex oxide structures were grown by a catalyst-free vapor-solid process. When pure Ga and tin oxide were used as source materials and compacted powders of Ga2O3 acted as substrates, [110] Ga2O3 nanowires grow preferentially. High-resolution transmission electron microscopy analysis reveals epitaxial relationship lattice matching between the Ga2O3 axis and SnO2 particles, forming skewer-like structures. The addition of chromium oxide to the source materials modifies the growth direction of the trunk Ga2O3 nanowires, growing along the [001], with crossing SnO2 wires. The SnO2/Ga2O3 junctions does not meet the lattice matching condition, forming a grain boundary. The electronic and optical properties have been studied by XPS and CL with high spatial resolution, enabling us to get both local chemical and electronic information on the surface in both type of structures. The results will allow tuning optical and electronic properties of oxide complex nanostructures locally as a function of the orientation. In particular, we report a dependence of the visible CL emission of SnO2 on its particular shape. Orange emission dominates in SnO2/Ga2O3 crossing wires while green-blue emission is observed in SnO2 particles attached to Ga2O3 trunks. The results show that the Ga2O3-SnO2 system appears to be a benchmark for shape engineering to get architectures involving nanowires via the control of the growth direction of the nanowires.
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Affiliation(s)
- Manuel Alonso-Orts
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
| | - Ana M Sánchez
- Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom
| | - Steven A Hindmarsh
- Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom
| | - Iñaki López
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
| | - Emilio Nogales
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
| | - Javier Piqueras
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
| | - Bianchi Méndez
- Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid , 28040-Madrid, Spain
- Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom
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36
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Interface dynamics and crystal phase switching in GaAs nanowires. Nature 2016; 531:317-22. [PMID: 26983538 PMCID: PMC4876924 DOI: 10.1038/nature17148] [Citation(s) in RCA: 146] [Impact Index Per Article: 18.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2015] [Accepted: 01/06/2016] [Indexed: 02/07/2023]
Abstract
Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically-grown nanowires provide an ideal system for studying the fundamental physics of phase selection, while also offering the potential for novel electronic applications based on crystal polytype engineering. Here we image GaAs nanowires during growth as they are switched between polytypes by varying growth conditions. We find striking differences between the growth dynamics of the polytypes, including differences in interface morphology, step flow, and catalyst geometry. We explain the differences, and the phase selection, through a model that relates the catalyst volume, contact angle at the trijunction, and nucleation site of each new layer. This allows us to predict the conditions under which each phase should be preferred, and use these predictions to design GaAs heterostructures. We suggest that these results may apply to phase selection in other nanowire systems.
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37
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Priante G, Glas F, Patriarche G, Pantzas K, Oehler F, Harmand JC. Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory. NANO LETTERS 2016; 16:1917-1924. [PMID: 26840359 DOI: 10.1021/acs.nanolett.5b05121] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The growth of III-III-V axial heterostructures in nanowires via the vapor-liquid-solid method is deemed to be unfavorable because of the high solubility of group III elements in the catalyst droplet. In this work, we study the formation by molecular beam epitaxy of self-catalyzed GaAs nanowires with AlxGa1-xAs insertions. The composition profiles are extracted and analyzed with monolayer resolution using high-angle annular dark-field scanning transmission electron microscopy. We test successfully several growth procedures to sharpen the heterointerfaces. For a given nanowire geometry, prefilling the droplet with Al atoms is shown to be the most efficient way to reduce the width of the GaAs/AlxGa1-xAs interface. Using the thermodynamic data available in the literature, we develop numerical and analytical models of the composition profiles, showing very good agreement with experiments. These models suggest that atomically sharp interfaces are attainable for catalyst droplets of small volumes.
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Affiliation(s)
- Giacomo Priante
- Laboratoire de Photonique et de Nanostructures, CNRS, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Frank Glas
- Laboratoire de Photonique et de Nanostructures, CNRS, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Gilles Patriarche
- Laboratoire de Photonique et de Nanostructures, CNRS, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Konstantinos Pantzas
- Laboratoire de Photonique et de Nanostructures, CNRS, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Fabrice Oehler
- Laboratoire de Photonique et de Nanostructures, CNRS, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Jean-Christophe Harmand
- Laboratoire de Photonique et de Nanostructures, CNRS, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
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Y-shaped ZnO Nanobelts Driven from Twinned Dislocations. Sci Rep 2016; 6:22494. [PMID: 26931057 PMCID: PMC4773883 DOI: 10.1038/srep22494] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2015] [Accepted: 02/16/2016] [Indexed: 11/22/2022] Open
Abstract
Y-shaped ZnO nanobelts are fabricated by a simple thermal evaporation method. Transmission Electron Microscopy (TEM) investigation shows that these ZnO nanobelts are crystals with twinned planes {11–21}. Convergent Beam Electron Diffraction studies show that the two sides of twinned nanobelts are O-terminated towards the twinned boundary and Zn-terminated outwards. The two branches of twinned ZnO nanobelts grow along [11–26] from the trunk and then turn to the polarization direction [0001]. The featured Y-shape morphology and TEM characterizations indicate that the growth of these novel nanostructures is driven by an unusual twinned dislocation growth mechanism.
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de la Mata M, Leturcq R, Plissard SR, Rolland C, Magén C, Arbiol J, Caroff P. Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System. NANO LETTERS 2016; 16:825-833. [PMID: 26733426 DOI: 10.1021/acs.nanolett.5b05125] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.
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Affiliation(s)
- María de la Mata
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Renaud Leturcq
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France
- Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST) , 5, avenue des Hauts-Fourneaux, L-4362 Esch-sur-Alzette, Luxembourg
| | - Sébastien R Plissard
- CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, 31400 Toulouse, France
| | - Chloé Rolland
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France
| | - César Magén
- Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA) -ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza , 50018 Zaragoza, Spain
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Catalonia, Spain
| | - Philippe Caroff
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia
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Ren D, Dheeraj DL, Jin C, Nilsen JS, Huh J, Reinertsen JF, Munshi AM, Gustafsson A, van Helvoort ATJ, Weman H, Fimland BO. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays. NANO LETTERS 2016; 16:1201-1209. [PMID: 26726825 DOI: 10.1021/acs.nanolett.5b04503] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.
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Affiliation(s)
| | - Dasa L Dheeraj
- CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway
| | - Chengjun Jin
- Center for Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark , DK-2800 Kongens Lyngby, Denmark
| | | | | | | | - A Mazid Munshi
- CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway
| | - Anders Gustafsson
- Solid State Physics and NanoLund, Lund University , Box 118, SE-22100 Lund, Sweden
| | | | - Helge Weman
- CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway
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Gorji Ghalamestani S, Lehmann S, Dick KA. Can antimonide-based nanowires form wurtzite crystal structure? NANOSCALE 2016; 8:2778-2786. [PMID: 26763161 DOI: 10.1039/c5nr07362f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The epitaxial growth of antimonide-based nanowires has become an attractive subject due to their interesting properties required for various applications such as long-wavelength IR detectors. The studies conducted on antimonide-based nanowires indicate that they preferentially crystallize in the zinc blende (ZB) crystal structure rather than wurtzite (WZ), which is common in other III-V nanowire materials. Also, with the addition of small amounts of antimony to arsenide- and phosphide-based nanowires grown under conditions otherwise leading to WZ structure, the crystal structure of the resulting ternary nanowires favors the ZB phase. Therefore, the formation of antimonide-based nanowires with the WZ phase presents fundamental challenges and is yet to be explored, but is particularly interesting for understanding the nanowire crystal phase in general. In this study, we examine the formation of Au-seeded InSb and GaSb nanowires under various growth conditions using metalorganic vapor phase epitaxy. We address the possibility of forming other phases than ZB such as WZ and 4H in binary nanowires and demonstrate the controlled formation of WZ InSb nanowires. We further discuss the fundamental aspects of WZ growth in Au-seeded antimonide-based nanowires.
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Affiliation(s)
| | - Sebastian Lehmann
- Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden.
| | - Kimberly A Dick
- Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden. and Polymer and Materials Chemistry, Lund University, Box 124, SE-22100 Lund, Sweden
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