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Xu J, Luo Z, Chen L, Zhou X, Zhang H, Zheng Y, Wei L. Recent advances in flexible memristors for advanced computing and sensing. MATERIALS HORIZONS 2024; 11:4015-4036. [PMID: 38919028 DOI: 10.1039/d4mh00291a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Conventional computing systems based on von Neumann architecture face challenges such as high power consumption and limited data processing capability. Improving device performance via scaling guided by Moore's Law becomes increasingly difficult. Emerging memristors can provide a promising solution for achieving high-performance computing systems with low power consumption. In particular, the development of flexible memristors is an important topic for wearable electronics, which can lead to intelligent systems in daily life with high computing capacity and efficiency. Here, recent advances in flexible memristors are reviewed, from operating mechanisms and typical materials to representative applications. Potential directions and challenges for future study in this area are also discussed.
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Affiliation(s)
- Jiaming Xu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Ziwang Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Long Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Xuhui Zhou
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Haozhe Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Yuanjin Zheng
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.
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2
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Zhang R, Li X, Zhao M, Wan C, Luo X, Liu S, Zhang Y, Wang Y, Yu G, Han X. Probability-Distribution-Configurable True Random Number Generators Based on Spin-Orbit Torque Magnetic Tunnel Junctions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2402182. [PMID: 38622896 PMCID: PMC11186041 DOI: 10.1002/advs.202402182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Indexed: 04/17/2024]
Abstract
The incorporation of randomness into stochastic computing can provide ample opportunities for applications such as simulated annealing, non-polynomial hard problem solving, and Bayesian neuron networks. In these cases, a considerable number of random numbers with an accurate and configurable probability distribution function (PDF) are indispensable. Preferably, these random numbers are provided at the hardware level to improve speed, efficiency, and parallelism. In this paper, how spin-orbit torque magnetic tunnel junctions (SOT-MTJs) with high barriers are suitable candidates for the desired true random number generators is demonstrated. Not only do these SOT-MTJs perform excellently in speed and endurance, but their randomness can also be conveniently and precisely controlled by a writing voltage, which makes them a well-performed Bernoulli bit. By utilizing these SOT-MTJ-based Bernoulli bits, any PDF, including Gaussian, uniform, exponential, Chi-square, and even arbitrarily defined distributions can be realized. These PDF-configurable true random number generators can then promise to advance the development of stochastic computing and broaden the applications of the SOT-MTJs.
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Affiliation(s)
- Ran Zhang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
| | - Xiaohan Li
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
| | - Mingkun Zhao
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Xuming Luo
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
| | - Shiqiang Liu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
| | - Yu Zhang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
| | - Yizhan Wang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsUniversity of Chinese Academy of SciencesChinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
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3
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Yang H, Li S, Wu Y, Bao X, Xiang Z, Xie Y, Pan L, Chen J, Liu Y, Li RW. Advances in Flexible Magnetosensitive Materials and Devices for Wearable Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2311996. [PMID: 38776537 DOI: 10.1002/adma.202311996] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2023] [Revised: 05/14/2024] [Indexed: 05/25/2024]
Abstract
Emerging fields, such as wearable electronics, digital healthcare, the Internet of Things, and humanoid robots, highlight the need for flexible devices capable of recording signals on curved surfaces and soft objects. In particular, flexible magnetosensitive devices garner significant attention owing to their ability to combine the advantages of flexible electronics and magnetoelectronic devices, such as reshaping capability, conformability, contactless sensing, and navigation capability. Several key challenges must be addressed to develop well-functional flexible magnetic devices. These include determining how to make magnetic materials flexible and even elastic, understanding how the physical properties of magnetic films change under external strain and stress, and designing and constructing flexible magnetosensitive devices. In recent years, significant progress is made in addressing these challenges. This study aims to provide a timely and comprehensive overview of the most recent developments in flexible magnetosensitive devices. This includes discussions on the fabrications and mechanical regulations of flexible magnetic materials, the principles and performances of flexible magnetic sensors, and their applications for wearable electronics. In addition, future development trends and challenges in this field are discussed.
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Affiliation(s)
- Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Shengbin Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Yuanzhao Wu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Xilai Bao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ziyin Xiang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Yali Xie
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Lili Pan
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jinxia Chen
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yiwei Liu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Kwon H, Yang Y, Kim G, Gim D, Ha M. Anisotropy in magnetic materials for sensors and actuators in soft robotic systems. NANOSCALE 2024; 16:6778-6819. [PMID: 38502047 DOI: 10.1039/d3nr05737b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
The field of soft intelligent robots has rapidly developed, revealing extensive potential of these robots for real-world applications. By mimicking the dexterities of organisms, robots can handle delicate objects, access remote areas, and provide valuable feedback on their interactions with different environments. For autonomous manipulation of soft robots, which exhibit nonlinear behaviors and infinite degrees of freedom in transformation, innovative control systems integrating flexible and highly compliant sensors should be developed. Accordingly, sensor-actuator feedback systems are a key strategy for precisely controlling robotic motions. The introduction of material magnetism into soft robotics offers significant advantages in the remote manipulation of robotic operations, including touch or touchless detection of dynamically changing shapes and positions resulting from the actuations of robots. Notably, the anisotropies in the magnetic nanomaterials facilitate the perception and response with highly selective, directional, and efficient ways used for both sensors and actuators. Accordingly, this review provides a comprehensive understanding of the origins of magnetic anisotropy from both intrinsic and extrinsic factors and summarizes diverse magnetic materials with enhanced anisotropy. Recent developments in the design of flexible sensors and soft actuators based on the principle of magnetic anisotropy are outlined, specifically focusing on their applicabilities in soft robotic systems. Finally, this review addresses current challenges in the integration of sensors and actuators into soft robots and offers promising solutions that will enable the advancement of intelligent soft robots capable of efficiently executing complex tasks relevant to our daily lives.
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Affiliation(s)
- Hyeokju Kwon
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
| | - Yeonhee Yang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
| | - Geonsu Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
| | - Dongyeong Gim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
| | - Minjeong Ha
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
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5
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Li M, Yang H, Xie Y, Huang K, Pan L, Tang W, Bao X, Yang Y, Sun J, Wang X, Che S, Li RW. Enhanced Stress Stability in Flexible Co/Pt Multilayers with Strong Perpendicular Magnetic Anisotropy. NANO LETTERS 2023; 23:8073-8080. [PMID: 37615627 DOI: 10.1021/acs.nanolett.3c02047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
Due to the magnetoelastic coupling, the magnetic properties of many flexible magnetic films (such as Fe, Co, and Ni) are sensitive to mechanical stress, which deteriorates the performance of flexible magnetoelectronic devices. We show that by stacking Co and Pt alternatively to form multilayers with strong perpendicular magnetic anisotropy (PMA), both magnetic hysteresis and magnetic domain measurements reveal robust PMA against external stress. As the PMA weakens at increased Co thickness, the magnetic anisotropy is vulnerable to external stress. These results were understood based on a micromagnetic model, which suggests that the strength of magnetoelastic anisotropy with respect to initial effective magnetic anisotropy affects the stress-stability of the film. Although the stress coefficient of magnetoelastic anisotropy is enhanced at reduced Co thickness, the concomitant increase of initial effective magnetic anisotropy guarantees a robust PMA against external stress. Our results provide a route to constructing flexible magnetoelectronic devices with enhanced stress stability.
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Affiliation(s)
- Mengchao Li
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310034, People's Republic of China
| | - Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Yali Xie
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Kai Huang
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310034, People's Republic of China
| | - Lili Pan
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Wei Tang
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Xilai Bao
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Yumeng Yang
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Jie Sun
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Xinming Wang
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Shenglei Che
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310034, People's Republic of China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
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6
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Jun AH, Hwang YH, Kang B, Lee S, Seok J, Lee JS, Song SH, Ju BK. Magnetic Properties of Amorphous Ta/CoFeB/MgO/Ta Thin Films on Deformable Substrates with Magnetic Field Angle and Tensile Strain. SENSORS (BASEL, SWITZERLAND) 2023; 23:7479. [PMID: 37687934 PMCID: PMC10490707 DOI: 10.3390/s23177479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 07/09/2023] [Accepted: 07/18/2023] [Indexed: 09/10/2023]
Abstract
Recently, the application of cobalt iron boron (CoFeB) thin films in magnetic sensors has been widely studied owing to their high magnetic moment, anisotropy, and stability. However, most of these studies were conducted on rigid silicon substrates. For diverse applications of magnetic and angle sensors, it is important to explore the properties of ferromagnetic thin films grown on nonrigid deformable substrates. In this study, representative deformable substrates (polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS)), which can be bent or stretched, were used to assess the in-plane magnetic field angle-dependent properties of amorphous Ta/CoFeB/MgO/Ta thin films grown on deformable substrates. The effects of substrate roughness, tensile stress, deformable substrate characteristics, and sputtering on magnetic properties, such as the coercive field (Hc), remanence over saturation magnetization (Mr/Ms), and biaxial characteristics, were investigated. This study presents an unconventional foundation for exploring deformable magnetic sensors capable of detecting magnetic field angles.
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Affiliation(s)
| | | | | | | | | | | | | | - Byeong-Kwon Ju
- Display and Nanosensor Laboratory, School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea (Y.H.H.)
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7
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Pan L, Xie Y, Yang H, Li M, Bao X, Shang J, Li RW. Flexible Magnetic Sensors. SENSORS (BASEL, SWITZERLAND) 2023; 23:4083. [PMID: 37112422 PMCID: PMC10141728 DOI: 10.3390/s23084083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 04/03/2023] [Accepted: 04/13/2023] [Indexed: 06/19/2023]
Abstract
With the merits of high sensitivity, high stability, high flexibility, low cost, and simple manufacturing, flexible magnetic field sensors have potential applications in various fields such as geomagnetosensitive E-Skins, magnetoelectric compass, and non-contact interactive platforms. Based on the principles of various magnetic field sensors, this paper introduces the research progress of flexible magnetic field sensors, including the preparation, performance, related applications, etc. In addition, the prospects of flexible magnetic field sensors and their challenges are presented.
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Affiliation(s)
- Lili Pan
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Yali Xie
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Mengchao Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xilai Bao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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8
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Dulal M, Afroj S, Ahn J, Cho Y, Carr C, Kim ID, Karim N. Toward Sustainable Wearable Electronic Textiles. ACS NANO 2022; 16:19755-19788. [PMID: 36449447 PMCID: PMC9798870 DOI: 10.1021/acsnano.2c07723] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 11/10/2022] [Indexed: 06/06/2023]
Abstract
Smart wearable electronic textiles (e-textiles) that can detect and differentiate multiple stimuli, while also collecting and storing the diverse array of data signals using highly innovative, multifunctional, and intelligent garments, are of great value for personalized healthcare applications. However, material performance and sustainability, complicated and difficult e-textile fabrication methods, and their limited end-of-life processability are major challenges to wide adoption of e-textiles. In this review, we explore the potential for sustainable materials, manufacturing techniques, and their end-of-the-life processes for developing eco-friendly e-textiles. In addition, we survey the current state-of-the-art for sustainable fibers and electronic materials (i.e., conductors, semiconductors, and dielectrics) to serve as different components in wearable e-textiles and then provide an overview of environmentally friendly digital manufacturing techniques for such textiles which involve less or no water utilization, combined with a reduction in both material waste and energy consumption. Furthermore, standardized parameters for evaluating the sustainability of e-textiles are established, such as life cycle analysis, biodegradability, and recyclability. Finally, we discuss the current development trends, as well as the future research directions for wearable e-textiles which include an integrated product design approach based on the use of eco-friendly materials, the development of sustainable manufacturing processes, and an effective end-of-the-life strategy to manufacture next generation smart and sustainable wearable e-textiles that can be either recycled to value-added products or decomposed in the landfill without any negative environmental impacts.
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Affiliation(s)
- Marzia Dulal
- Centre
for Print Research (CFPR), University of
the West of England, Frenchay Campus, BristolBS16 1QY, United
Kingdom
| | - Shaila Afroj
- Centre
for Print Research (CFPR), University of
the West of England, Frenchay Campus, BristolBS16 1QY, United
Kingdom
| | - Jaewan Ahn
- Department
of Materials Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Yujang Cho
- Department
of Materials Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Chris Carr
- Clothworkers’
Centre for Textile Materials Innovation for Healthcare, School of
Design, University of Leeds, LeedsLS2 9JT, United Kingdom
| | - Il-Doo Kim
- Department
of Materials Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Nazmul Karim
- Centre
for Print Research (CFPR), University of
the West of England, Frenchay Campus, BristolBS16 1QY, United
Kingdom
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9
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Two-dimensional materials prospects for non-volatile spintronic memories. Nature 2022; 606:663-673. [PMID: 35732761 DOI: 10.1038/s41586-022-04768-0] [Citation(s) in RCA: 63] [Impact Index Per Article: 31.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2020] [Accepted: 04/19/2022] [Indexed: 01/12/2023]
Abstract
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.
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Heng W, Solomon S, Gao W. Flexible Electronics and Devices as Human-Machine Interfaces for Medical Robotics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107902. [PMID: 34897836 PMCID: PMC9035141 DOI: 10.1002/adma.202107902] [Citation(s) in RCA: 117] [Impact Index Per Article: 58.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2021] [Revised: 12/08/2021] [Indexed: 05/02/2023]
Abstract
Medical robots are invaluable players in non-pharmaceutical treatment of disabilities. Particularly, using prosthetic and rehabilitation devices with human-machine interfaces can greatly improve the quality of life for impaired patients. In recent years, flexible electronic interfaces and soft robotics have attracted tremendous attention in this field due to their high biocompatibility, functionality, conformability, and low-cost. Flexible human-machine interfaces on soft robotics will make a promising alternative to conventional rigid devices, which can potentially revolutionize the paradigm and future direction of medical robotics in terms of rehabilitation feedback and user experience. In this review, the fundamental components of the materials, structures, and mechanisms in flexible human-machine interfaces are summarized by recent and renowned applications in five primary areas: physical and chemical sensing, physiological recording, information processing and communication, soft robotic actuation, and feedback stimulation. This review further concludes by discussing the outlook and current challenges of these technologies as a human-machine interface in medical robotics.
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Affiliation(s)
- Wenzheng Heng
- Andrew and Peggy Cherng Department of Medical Engineering, California Institute of Technology, Pasadena, CA, 91125, USA
| | - Samuel Solomon
- Andrew and Peggy Cherng Department of Medical Engineering, California Institute of Technology, Pasadena, CA, 91125, USA
| | - Wei Gao
- Andrew and Peggy Cherng Department of Medical Engineering, California Institute of Technology, Pasadena, CA, 91125, USA
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11
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Nakajima T, Fujio Y, Sugahara T, Tsuchiya T. Flexible Ceramic Film Sensors for Free-Form Devices. SENSORS (BASEL, SWITZERLAND) 2022; 22:1996. [PMID: 35271141 PMCID: PMC8914772 DOI: 10.3390/s22051996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Revised: 03/01/2022] [Accepted: 03/02/2022] [Indexed: 02/06/2023]
Abstract
Recent technological innovations, such as material printing techniques and surface functionalization, have significantly accelerated the development of new free-form sensors for next-generation flexible, wearable, and three-dimensional electronic devices. Ceramic film sensors, in particular, are in high demand for the production of reliable flexible devices. Various ceramic films can now be formed on plastic substrates through the development of low temperature fabrication processes for ceramic films, such as photocrystallization and transferring methods. Among flexible sensors, strain sensors for precise motion detection and photodetectors for biomonitoring have seen the most research development, but other fundamental sensors for temperature and humidity have also begun to grow. Recently, flexible gas and electrochemical sensors have attracted a lot of attention from a new real-time monitoring application that uses human breath and perspiration to accurately diagnose presymptomatic states. The development of a low-temperature fabrication process of ceramic film sensors and related components will complete the chemically stable and reliable free-form sensing devices by satisfying the demands that can only be addressed by flexible metal and organic components.
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Affiliation(s)
- Tomohiko Nakajima
- Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8565, Japan;
| | - Yuki Fujio
- Sensing System Research Center, National Institute of Advanced Industrial Science and Technology, Saga 841-0052, Japan;
| | - Tohru Sugahara
- Department of Energy and Environmental Materials, SANKEN, Osaka University, Osaka 567-0047, Japan;
| | - Tetsuo Tsuchiya
- Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8565, Japan;
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12
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Khan AI, Daus A, Islam R, Neilson KM, Lee HR, Wong HSP, Pop E. Ultralow-switching current density multilevel phase-change memory on a flexible substrate. Science 2021; 373:1243-1247. [PMID: 34516795 DOI: 10.1126/science.abj1261] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- Asir Intisar Khan
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Alwin Daus
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Raisul Islam
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Kathryn M Neilson
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Hye Ryoung Lee
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.,Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 USA
| | - H-S Philip Wong
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.,Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 USA.,Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA
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13
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Sierra JF, Fabian J, Kawakami RK, Roche S, Valenzuela SO. Van der Waals heterostructures for spintronics and opto-spintronics. NATURE NANOTECHNOLOGY 2021; 16:856-868. [PMID: 34282312 DOI: 10.1038/s41565-021-00936-x] [Citation(s) in RCA: 116] [Impact Index Per Article: 38.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2020] [Accepted: 06/03/2021] [Indexed: 06/13/2023]
Abstract
The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here we provide an overview of recent progress in 2D spintronics and opto-spintronics using van der Waals heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multifunctional hybrid heterostructures based on van der Waals materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultracompact all-2D spin devices and their potential applications in conventional and quantum technologies.
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Affiliation(s)
- Juan F Sierra
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain.
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, Regensburg, Germany
| | | | - Stephan Roche
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain.
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14
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Hassan M, Laureti S, Rinaldi C, Fagiani F, Varotto S, Barucca G, Schmidt NY, Varvaro G, Albrecht M. Perpendicularly magnetized Co/Pd-based magneto-resistive heterostructures on flexible substrates. NANOSCALE ADVANCES 2021; 3:3076-3084. [PMID: 36133649 PMCID: PMC9418425 DOI: 10.1039/d1na00110h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Accepted: 04/08/2021] [Indexed: 06/14/2023]
Abstract
Flexible magneto-resistive heterostructures have received a great deal of attention over the past few years as they allow for new product paradigms that are not possible with conventional rigid substrates. While the progress and development of systems with longitudinal magnetic anisotropy on non-planar substrates has been remarkable, flexible magneto-resistive heterostructures with perpendicular magnetic anisotropy (PMA) have never been studied despite the possibility to obtain additional functionality and improved performance. To fill this gap, flexible PMA Co/Pd-based giant magneto-resistive (GMR) spin-valve stacks were prepared by using an innovative transfer-and-bonding strategy exploiting the low adhesion of a gold underlayer to SiO x /Si(100) substrates. The approach allows overcoming the limits of the direct deposition on commonly used polymer substrates, whose high surface roughness and low melting temperature could hinder the growth of complex heterostructures with perpendicular magnetic anisotropy. The obtained PMA flexible spin-valves show a sizeable GMR ratio (∼1.5%), which is not affected by the transfer process, and a high robustness against bending as indicated by the slight change of the magneto-resistive properties upon bending, thus allowing for their integration on curved surfaces and the development of a novel class of advanced devices based on flexible magneto-resistive structures with perpendicular magnetic anisotropy. Besides endowing the family of flexible electronics with PMA magneto-resistive heterostructures, the exploitation of the results might apply to high temperature growth processes and to the fabrication of other functional and flexible multilayer materials engineered at the nanoscale.
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Affiliation(s)
- M Hassan
- Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, nM2-Lab Via Salaria km 29.300 Monterotondo Scalo (Roma) 00015 Italy
- Università Politecnica delle Marche, Dipartimento SIMAU Via Brecce Bianche Ancona 60131 Italy
| | - S Laureti
- Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, nM2-Lab Via Salaria km 29.300 Monterotondo Scalo (Roma) 00015 Italy
| | - C Rinaldi
- Politecnico di Milano, Department of Physics and IFN-CNR via G. Colombo 81 20133 Milano Italy
| | - F Fagiani
- Politecnico di Milano, Department of Physics and IFN-CNR via G. Colombo 81 20133 Milano Italy
| | - S Varotto
- Politecnico di Milano, Department of Physics and IFN-CNR via G. Colombo 81 20133 Milano Italy
| | - G Barucca
- Università Politecnica delle Marche, Dipartimento SIMAU Via Brecce Bianche Ancona 60131 Italy
| | - N Y Schmidt
- University of Augsburg, Institute of Physics Universitätsstraße 1 Nord D-86159 Augsburg Germany
| | - G Varvaro
- Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, nM2-Lab Via Salaria km 29.300 Monterotondo Scalo (Roma) 00015 Italy
| | - M Albrecht
- University of Augsburg, Institute of Physics Universitätsstraße 1 Nord D-86159 Augsburg Germany
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15
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Zighem F, Faurie D. A review on nanostructured thin films on flexible substrates: links between strains and magnetic properties. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:233002. [PMID: 33973532 DOI: 10.1088/1361-648x/abe96c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Accepted: 02/24/2021] [Indexed: 06/12/2023]
Abstract
This paper provides a topical review of work on systems based on magnetic nanostructured thin films on polymer substrates. This topic has indeed experienced a significant growth in the last ten years. Several studies show a strong potential of these systems for a number of applications requiring functionalities on non-planar surfaces. However, the deformations necessary for this type of applications are likely to modify their magnetic properties, and the relationships between strain fields, potential damages and functional properties must be well understood. This review focuses both on the development of techniques dedicated to this research, on the synthesis of the experimental results obtained over the last ten years and on the perspectives related to stretchable or flexible magnetoelectric systems. In particular, the article focuses on the links between magnetic behavior and the strain field developing during the whole history of these systems (elaboration, reversible and irreversible loading).
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Affiliation(s)
- F Zighem
- LSPM-CNRS, UPR3407, Université Sorbonne Paris Nord, 93430, Villetaneuse, France
| | - D Faurie
- LSPM-CNRS, UPR3407, Université Sorbonne Paris Nord, 93430, Villetaneuse, France
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16
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Dong G, Li S, Li T, Wu H, Nan T, Wang X, Liu H, Cheng Y, Zhou Y, Qu W, Zhao Y, Peng B, Wang Z, Hu Z, Luo Z, Ren W, Pennycook SJ, Li J, Sun J, Ye ZG, Jiang Z, Zhou Z, Ding X, Min T, Liu M. Periodic Wrinkle-Patterned Single-Crystalline Ferroelectric Oxide Membranes with Enhanced Piezoelectricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004477. [PMID: 33135253 DOI: 10.1002/adma.202004477] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2020] [Revised: 09/06/2020] [Indexed: 06/11/2023]
Abstract
Self-assembled membranes with periodic wrinkled patterns are the critical building blocks of various flexible electronics, where the wrinkles are usually designed and fabricated to provide distinct functionalities. These membranes are typically metallic and organic materials with good ductility that are tolerant of complex deformation. However, the preparation of oxide membranes, especially those with intricate wrinkle patterns, is challenging due to their inherently strong covalent or ionic bonding, which usually leads to material crazing and brittle fracture. Here, wrinkle-patterned BaTiO3 (BTO)/poly(dimethylsiloxane) membranes with finely controlled parallel, zigzag, and mosaic patterns are prepared. The BTO layers show excellent flexibility and can form well-ordered and periodic wrinkles under compressive in-plane stress. Enhanced piezoelectricity is observed at the sites of peaks and valleys of the wrinkles where the largest strain gradient is generated. Atomistic simulations further reveal that the excellent elasticity and the correlated coupling between polarization and strain/strain gradient are strongly associated with ferroelectric domain switching and continuous dipole rotation. The out-of-plane polarization is primarily generated at compressive regions, while the in-plane polarization dominates at the tensile regions. The wrinkled ferroelectric oxides with differently strained regions and correlated polarization distributions would pave a way toward novel flexible electronics.
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Affiliation(s)
- Guohua Dong
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Suzhi Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Tao Li
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Haijun Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Tianxiang Nan
- School of Electronic and Information Engineering, Tsinghua University, Beijing, 100084, China
| | - Xiaohua Wang
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, No. 28 Xianning West Road, Xi'an, Shaanxi Province, 710049, China
| | - Haixia Liu
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yuxin Cheng
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yuqing Zhou
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Wanbo Qu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yifan Zhao
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Bin Peng
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhiguang Wang
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhongqiang Hu
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory & CAS Key Laboratory of Materials for Energy Conversion, Department of Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Wei Ren
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Ju Li
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jun Sun
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zuo-Guang Ye
- Department of Chemistry & 4D LABS, Simon Fraser University, Burnaby, BC, V5A 1S6, Canada
| | - Zhuangde Jiang
- The State Key Laboratory for Manufacturing Systems Engineering, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ziyao Zhou
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xiangdong Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Tai Min
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ming Liu
- The Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
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17
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Advances in Magnetoresistive Biosensors. MICROMACHINES 2019; 11:mi11010034. [PMID: 31888076 PMCID: PMC7019276 DOI: 10.3390/mi11010034] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2019] [Revised: 12/22/2019] [Accepted: 12/24/2019] [Indexed: 01/05/2023]
Abstract
Magnetoresistance (MR) based biosensors are considered promising candidates for the detection of magnetic nanoparticles (MNPs) as biomarkers and the biomagnetic fields. MR biosensors have been widely used in the detection of proteins, DNAs, as well as the mapping of cardiovascular and brain signals. In this review, we firstly introduce three different MR devices from the fundamental perspectives, followed by the fabrication and surface modification of the MR sensors. The sensitivity of the MR sensors can be improved by optimizing the sensing geometry, engineering the magnetic bioassays on the sensor surface, and integrating the sensors with magnetic flux concentrators and microfluidic channels. Different kinds of MR-based bioassays are also introduced. Subsequently, the research on MR biosensors for the detection of protein biomarkers and genotyping is reviewed. As a more recent application, brain mapping based on MR sensors is summarized in a separate section with the discussion of both the potential benefits and challenges in this new field. Finally, the integration of MR biosensors with flexible substrates is reviewed, with the emphasis on the fabrication techniques to obtain highly shapeable devices while maintaining comparable performance to their rigid counterparts.
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18
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Luo ZD, Peters JJP, Sanchez AM, Alexe M. Flexible Memristors Based on Single-Crystalline Ferroelectric Tunnel Junctions. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23313-23319. [PMID: 31181153 DOI: 10.1021/acsami.9b04738] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric tunnel junction (FTJ) based memristors exhibiting continuous electric field controllable resistance states have been considered promising candidates for future high-density memories and advanced neuromorphic computational architectures. However, the use of rigid single crystal substrate and high temperature growth of the epitaxial FTJ thin films constitutes the main obstacles to using this kind of heterostructure in flexible computing devices. Here, we report the integration of centimeter-scale single crystalline FTJs on flexible plastic substrates, by water-etching based epitaxial oxide membrane lift-off and the following transfer. The resulting highly flexible FTJ membranes retain the single-crystalline structure along with stable and switchable ferroelectric polarization as the grown-on single crystal substrate state. We show that the obtained flexible memristors, i.e., FTJs on plastic substrates, present high speed and low voltage mediated memristive behaviors with resistance changes over 500% and are stable against shape change. This work is an essential step toward the realization of epitaxial ultrathin ferroelectric oxide film-based electronics on large-area, flexible, and affordable substrates.
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Affiliation(s)
- Zheng-Dong Luo
- Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom
| | - Jonathan J P Peters
- Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom
| | - Ana M Sanchez
- Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom
| | - Marin Alexe
- Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom
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19
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Abstract
Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.
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20
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Lee S, Kim J, Jeon JH, Song M, Kim S, You YG, Jhang SH, Seo SA, Chun SH. Chemical Vapor-Deposited Vanadium Pentoxide Nanosheets with Highly Stable and Low Switching Voltages for Effective Selector Devices. ACS APPLIED MATERIALS & INTERFACES 2018; 10:42875-42881. [PMID: 30427172 DOI: 10.1021/acsami.8b15686] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Recently, attempts to overcome the physical limits of memory devices have led to the development of promising materials and architectures for next-generation memory technology. The selector device is one of the essential ingredients of high-density stacked memory systems. However, complicated constituent deposition conditions and thermal degradation are problematic, even with effective selector device materials. Herein, we demonstrate the highly stable and low-threshold voltages of vanadium pentoxide (V2O5) nanosheets synthesized by facile chemical vapor deposition, which have not been previously reported on the threshold switching (TS) properties. The electrons occupying trap sites in poly-crystalline V2O5 nanosheet contribute to the perfectly symmetric TS feature at the bias polarity and low-threshold voltages in V2O5, confirmed by high-resolution transmission electron microscopy measurements. Furthermore, we find an additional PdO interlayer in V2O5 nanodevices connected with a Pd/Au electrode after thermal annealing treatment. The PdO interlayer decreases the threshold voltages, and the Ion/ Ioff ratio increases because of the increased trap density of V2O5. These studies provide insights into V2O5 switching characteristics, which can support low power consumption in nonvolatile memory devices.
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Affiliation(s)
- Sunghun Lee
- Department of Physics and Astronomy , Sejong University , Seoul 05006 , Republic of Korea
| | - Jinsu Kim
- Department of Physics and Astronomy , Sejong University , Seoul 05006 , Republic of Korea
| | - Jae Ho Jeon
- Department of Physics and Astronomy , Sejong University , Seoul 05006 , Republic of Korea
| | - Minho Song
- Department of Physics and Astronomy , Sejong University , Seoul 05006 , Republic of Korea
| | - Seonyeong Kim
- Department of Physics and Astronomy , Sejong University , Seoul 05006 , Republic of Korea
| | - Young Gyu You
- School of Physics , Konkuk University , Seoul 05029 , Republic of Korea
| | - Sung Ho Jhang
- School of Physics , Konkuk University , Seoul 05029 , Republic of Korea
| | - Sun-Ae Seo
- Department of Physics and Astronomy , Sejong University , Seoul 05006 , Republic of Korea
| | - Seung-Hyun Chun
- Department of Physics and Astronomy , Sejong University , Seoul 05006 , Republic of Korea
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21
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Magnetization Manipulation of a Flexible Magnetic Sensor by Controlled Stress Application. Sci Rep 2018; 8:15765. [PMID: 30361479 PMCID: PMC6202418 DOI: 10.1038/s41598-018-34036-z] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2018] [Accepted: 10/08/2018] [Indexed: 11/25/2022] Open
Abstract
Spin-based electronic devices on polymer substrates have been intensively investigated because of several advantages in terms of weight, thickness, and flexibility, compared to rigid substrates. So far, most studies have focused on maintaining the functionality of devices with minimum degradation against mechanical deformation, as induced by stretching and bending of flexible devices. Here, we applied repetitive bending stress on a flexible magnetic layer and a spin-valve structure composed of Ta/NiFe/CoFe/Cu/Ni/IrMn/Ta on a polyimide (PI) substrate. It is found that the anisotropy can be enhanced or weakened depending upon the magnetostrictive properties under stress. In the flat state after bending, due to residual compressive stress, the magnetic anisotropy of the positive magnetostrictive free layer is weakened while that of the pinned layer with negative magnetostriction is enhanced. Thus, the magnetic configuration of the spin-valve is appropriate for use as a sensor. Through the bending process, we design a prototype magnetic sensor cell array and successfully show a sensing capability by detecting magnetic microbeads. This attempt demonstrates that appropriate control of stress, induced by repetitive bending of flexible magnetic layers, can be effectively used to modify the magnetic configurations for the magnetic sensor.
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22
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Chen JY, Lau YC, Coey JMD, Li M, Wang JP. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications. Sci Rep 2017; 7:42001. [PMID: 28150807 PMCID: PMC5288802 DOI: 10.1038/srep42001] [Citation(s) in RCA: 51] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2016] [Accepted: 01/04/2017] [Indexed: 11/15/2022] Open
Abstract
The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.
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Affiliation(s)
- Jun-Yang Chen
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
| | - Yong-Chang Lau
- School of Physics and CRANN, Trinity College, Dublin 2, Ireland
| | - J M D Coey
- School of Physics and CRANN, Trinity College, Dublin 2, Ireland
| | - Mo Li
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
| | - Jian-Ping Wang
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
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