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Kundar M, Gayen K, Ray R, Kushavah D, Pal SK. Highly stable two-dimensional Ruddlesden-Popper perovskite-based resistive switching memory devices. NANOSCALE 2024; 16:16159-16171. [PMID: 39133263 DOI: 10.1039/d4nr01395f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Resistive switching random-access memory (ReRAM) devices based on organic-inorganic halide perovskites (OIHPs) have emerged as a new class of data storage devices. Recently, two-dimensional (2D) OIHPs have attracted much attention for ReRAM applications because of their structural diversity and superior stability. Here, the RS characteristics of ReRAM devices fabricated utilizing pure 2D Ruddlesden-Popper (RP) perovskite crystals, namely (TEA)2PbBr4 and (TEA)2PbI4, are reported. The RS memory devices exhibit reliable and reproducible bipolar switching properties with high ON/OFF ratio (∼104), excellent data retention of over 104 s, and good endurance characteristics of 200 cycles. This study investigates temperature-dependent RS behaviors, elucidating the creation and annihilation of a conducting pathway in the presence of an external electric field. Additionally, the RS property of 2D RP perovskite-based memory devices is found to be retained over 45 days at ambient conditions under a relative humidity of 47% ± 4%. Our findings may accelerate the technological deployment of stable 2D perovskite-based RS memory devices for successful logic application.
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Affiliation(s)
- Milon Kundar
- School of Physical Sciences, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India.
- Advanced Materials Research Centre, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India
| | - Koushik Gayen
- School of Physical Sciences, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India.
- Advanced Materials Research Centre, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India
| | - Rajeev Ray
- School of Physical Sciences, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India.
- Advanced Materials Research Centre, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India
| | - Dushyant Kushavah
- School of Physical Sciences, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India.
- Advanced Materials Research Centre, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India
| | - Suman Kalyan Pal
- School of Physical Sciences, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India.
- Advanced Materials Research Centre, India Institute of Technology Mandi, Kamand, Mandi-175005, Himachal Pradesh, India
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2
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Chen T, Ran Q, Wang Y, Zhang W, Tang X, Han Y, Zhang K. A Flexible Memristor Based on CsPbCl 3 Nanocrystals for an Artificial Nociceptor. J Phys Chem Lett 2024; 15:8555-8561. [PMID: 39137320 DOI: 10.1021/acs.jpclett.4c01944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
Halide perovskites (HPs) based memristors show great potential in the simulation of biological neurons. Herein, a memristor with Ag/PMMA&CsPbCl3/ITO structure is developed by incorporating CsPbCl3 nanocrystals (NCs) into poly(methyl methacrylate) (PMMA) as the functional layer. The device exhibits typical bipolar resistive behavior, low operating voltage, good endurance of more than 400 cycles, consistent and excellent ON/OFF ratio (≈ 103), and high mechanical bending stability (bending times = 1000). The RS mechanism has been well explained by the electric field induced formation and rupture of Ag filaments in the PMMA&CsPbCl3 layer. More importantly, the memristor successfully displays fundamental nociceptive functions including threshold, nonadaptation, relaxation, and sensitization (allodynia and hyperalgesia). To demonstrate the feasibility of the artificial nociceptor, a pressure nociceptor system is constructed using the Ag/PMMA&CsPbCl3/ITO device. These results provide new perspectives for the development of next-generation, high-performance HPs based neural morphology devices.
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Affiliation(s)
- Ting Chen
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Qian Ran
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Yuchan Wang
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wenxia Zhang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Xiaosheng Tang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Yemei Han
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Kailiang Zhang
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
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3
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Jaafar AH, Al Habsi SKS, Braben T, Venables C, Francesconi MG, Stasiuk GJ, Kemp NT. Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43816-43826. [PMID: 39129500 PMCID: PMC11345731 DOI: 10.1021/acsami.4c07820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2024] [Revised: 08/02/2024] [Accepted: 08/04/2024] [Indexed: 08/13/2024]
Abstract
We report on hybrid memristor devices consisting of germanium dioxide nanoparticles (GeO2 NP) embedded within a poly(methyl methacrylate) (PMMA) thin film. Besides exhibiting forming-free resistive switching and an uncommon "ON" state in pristine conditions, the hybrid (nanocomposite) devices demonstrate a unique form of mixed-mode switching. The observed stopping voltage-dependent switching enables state-of-the-art bifunctional synaptic behavior with short-term (volatile/temporal) and long-term (nonvolatile/nontemporal) modes that are switchable depending on the stopping voltage applied. The short-term memory mode device is demonstrated to further emulate important synaptic functions such as short-term potentiation (STP), short-term depression (STD), paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), spike-voltage-dependent plasticity (SVDP), spike-duration-dependent plasticity (SDDP), and, more importantly, the "learning-forgetting-rehearsal" behavior. The long-term memory mode gives additional long-term potentiation (LTP) and long-term depression (LTD) characteristics for long-term plasticity applications. The work shows a unique coexistence of the two resistive switching modes, providing greater flexibility in device design for future adaptive and reconfigurable neuromorphic computing systems at the hardware level.
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Affiliation(s)
- Ayoub H. Jaafar
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, U.K.
| | | | - Thomas Braben
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, U.K.
| | - Craig Venables
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, U.K.
| | | | - Graeme J. Stasiuk
- Department
of Imaging Chemistry and Biology, School of Biomedical Engineering
and Imaging Sciences, King’s College
London, London SE1 7EH, U.K.
| | - Neil T. Kemp
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, U.K.
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4
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Li H, Li Q, Sun T, Zhou Y, Han ST. Recent advances in artificial neuromorphic applications based on perovskite composites. MATERIALS HORIZONS 2024. [PMID: 39140168 DOI: 10.1039/d4mh00574k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
High-performance perovskite materials with excellent physical, electronic, and optical properties play a significant role in artificial neuromorphic devices. However, the development of perovskites in microelectronics is inevitably hindered by their intrinsic non-ideal properties, such as high defect density, environmental sensitivity, and toxicity. By leveraging materials engineering, integrating various materials with perovskites to leverage their mutual strengths presents great potential to enhance ion migration, energy level alignment, photoresponsivity, and surface passivation, thereby advancing optoelectronic and neuromorphic device development. This review initially provides an overview of perovskite materials across different dimensions, highlighting their physical properties and detailing their applications and metrics in two- and three-terminal devices. Subsequently, we comprehensively summarize the application of perovskites in combination with other materials, including organics, nanomaterials, oxides, ferroelectrics, and crystalline porous materials (CPMs), to develop advanced devices such as memristors, transistors, photodetectors, sensors, light-emitting diodes (LEDs), and artificial neuromorphic systems. Lastly, we outline the challenges and future research directions in synthesizing perovskite composites for neuromorphic devices. Through the review and analysis, we aim to broaden the utilization of perovskites and their composites in neuromorphic research, offering new insights and approaches for grasping the intricate physical working mechanisms and functionalities of perovskites.
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Affiliation(s)
- Huaxin Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Qingxiu Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Tao Sun
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, P. R. China.
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5
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Peng X, Zhang J, Xiao P. Photopolymerization Approach to Advanced Polymer Composites: Integration of Surface-Modified Nanofillers for Enhanced Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400178. [PMID: 38843462 DOI: 10.1002/adma.202400178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2024] [Revised: 05/08/2024] [Indexed: 06/28/2024]
Abstract
The incorporation of functionalized nanofillers into polymers via photopolymerization approach has gained significant attention in recent years due to the unique properties of the resulting composite materials. Surface modification of nanofillers plays a crucial role in their compatibility and polymerization behavior within the polymer matrix during photopolymerization. This review focuses on the recent developments in surface modification of various nanofillers, enabling their integration into polymer systems through photopolymerization. The review discusses the key aspects of surface modification of nanofillers, including the selection of suitable surface modifiers, such as photoinitiators and polymerizable groups, as well as the optimization of modification conditions to achieve desired surface properties. The influence of surface modification on the interfacial interactions between nanofillers and the polymer matrix is also explored, as it directly impacts the final properties of the nanocomposites. Furthermore, the review highlights the applications of nanocomposites prepared by photopolymerization, such as sensors, gas separation membranes, purification systems, optical devices, and biomedical materials. By providing a comprehensive overview of the surface modification strategies and their impact on the photopolymerization process and the resulting nanocomposite properties, this review aims to inspire new research directions and innovative ideas in the development of high-performance polymer nanocomposites for diverse applications.
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Affiliation(s)
- Xiaotong Peng
- Research School of Chemistry, Australian National University, Canberra, ACT, 2601, Australia
| | - Jing Zhang
- Future Industries Institute, University of South Australia, Mawson Lakes, SA, 5095, Australia
| | - Pu Xiao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
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6
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Lv T, Liang Y, Zeng F, Li F, Yang X, Huang J, Zheng R. Kinetic Process with Anti-Frenkel Disorder in a CsPbI 3 Perovskite. J Phys Chem Lett 2024:2929-2935. [PMID: 38451529 DOI: 10.1021/acs.jpclett.3c03473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Halide perovskites are rich in ionic diffusion phenomena due to their low activation energy. The soft lead iodide lattice can, in theory, endow the system with more complex defect collaborative motions. In this work, we systematically investigated the hopping mechanics of iodide interstitials with respect to various defect behaviors, such as anti-Frenkel disorder creation and annihilation. We found that the existence of iodide vacancies and interstitials can effectively lower the creation barrier of additional anti-Frenkel disorder in the halide perovskite. The free energy barriers for generating additional Frenkel defect pairs vary from 0.25 to 0.43 eV, in the proximity of those of the original iodide defects at 300 K. This finding suggests that the spontaneous creation of a specific level of anti-Frenkel disorder facilitates long-range annihilation and defect hopping processes.
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Affiliation(s)
- Taoyuze Lv
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
| | - Yuhang Liang
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW 2006, Australia
| | - Fang Zeng
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
| | - Feng Li
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
| | - Xudong Yang
- State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, 800 Dong Chuan Road, Minhang District, Shanghai 200240, China
| | - Jun Huang
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW 2006, Australia
| | - Rongkun Zheng
- School of Physics, The University of Sydney, Sydney, NSW 2006, Australia
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7
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Liu Z, Cheng P, Kang R, Zhou J, Wang X, Zhao X, Zhao J, Liu D, Zuo Z. Piezo-Acoustic Resistive Switching Behaviors in High-Performance Organic-Inorganic Hybrid Perovskite Memristors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308383. [PMID: 38225698 PMCID: PMC10933641 DOI: 10.1002/advs.202308383] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2023] [Revised: 12/21/2023] [Indexed: 01/17/2024]
Abstract
Memristors are regarded as promising candidates for breaking the problems including high off-chip memory access delays and the hash rate cost of frequent data moving induced by algorithms for data-intensive applications of existing computational systems. Recently, organic-inorganic halide perovskites (OIHPs) have been recognized as exceptionally favorable materials for memristors due to ease of preparation, excellent electrical conductivity, and structural flexibility. However, research on OIHP-based memristors focuses on modulating resistive switching (RS) performance through electric fields, resulting in difficulties in moving away from complex external circuits and wire connections. Here, a multilayer memristor has been constructed with eutectic gallium and indium (EGaIn)/ MAPbI3 /poly(3,4-ethylenedioxythiophene): poly(4-styrenesulphonate) (PEDOT: PSS)/indium tin oxide (ITO) structure, which exhibits reproducible and reliable bipolar RS with low SET/RESET voltages, stable endurance, ultrahigh average ON/OFF ratio, and excellent retention. Importantly, based on ion migration activated by sound-driven piezoelectric effects, the device exhibits a stable acoustic response with an average ON/OFF ratio greater than 103 , thus realizing non-contact, multi-signal, and far-field control in RS modulation. This study provides a single-structure multifunctional memristor as an integrated architecture for sensing, data storage, and computing.
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Affiliation(s)
- Zehan Liu
- Key Laboratory of Laser & Infrared System (Shandong University)Ministry of EducationShandong UniversityQingdao266237P. R. China
- Center for Optics Research and EngineeringShandong UniversityQingdao266237P. R. China
| | - Pengpeng Cheng
- Key Laboratory of Laser & Infrared System (Shandong University)Ministry of EducationShandong UniversityQingdao266237P. R. China
- Center for Optics Research and EngineeringShandong UniversityQingdao266237P. R. China
| | - Ruyan Kang
- Institute of Novel SemiconductorsShandong UniversityJinan250100P. R. China
| | - Jian Zhou
- Key Laboratory of Laser & Infrared System (Shandong University)Ministry of EducationShandong UniversityQingdao266237P. R. China
- Center for Optics Research and EngineeringShandong UniversityQingdao266237P. R. China
| | - Xiaoshan Wang
- Key Laboratory of Laser & Infrared System (Shandong University)Ministry of EducationShandong UniversityQingdao266237P. R. China
- Center for Optics Research and EngineeringShandong UniversityQingdao266237P. R. China
| | - Xian Zhao
- Key Laboratory of Laser & Infrared System (Shandong University)Ministry of EducationShandong UniversityQingdao266237P. R. China
- Center for Optics Research and EngineeringShandong UniversityQingdao266237P. R. China
| | - Jia Zhao
- Key Laboratory of Laser & Infrared System (Shandong University)Ministry of EducationShandong UniversityQingdao266237P. R. China
- School of Information Science and EngineeringShandong UniversityQingdao266237P. R. China
| | - Duo Liu
- Institute of Novel SemiconductorsShandong UniversityJinan250100P. R. China
| | - Zhiyuan Zuo
- Key Laboratory of Laser & Infrared System (Shandong University)Ministry of EducationShandong UniversityQingdao266237P. R. China
- Center for Optics Research and EngineeringShandong UniversityQingdao266237P. R. China
- Institute of Novel SemiconductorsShandong UniversityJinan250100P. R. China
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8
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Liu X, Sun C, Ye X, Zhu X, Hu C, Tan H, He S, Shao M, Li RW. Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2311472. [PMID: 38421081 DOI: 10.1002/adma.202311472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/06/2024] [Indexed: 03/02/2024]
Abstract
Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.
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Affiliation(s)
- Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cong Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongwei Tan
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Shang He
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Mengjie Shao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
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9
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He S, Yu X, Wang J, Zhong W, Cheng B, Zhao J. Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers. NANOSCALE 2024; 16:1102-1114. [PMID: 38008998 DOI: 10.1039/d3nr04633h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2023]
Abstract
Emerging resistive switching devices hold the potential to realize densely packed passive nanocrossbar arrays, suitable for deployment as random access memory devices (ReRAMs) in both embedded and high-capacity storage applications. In this study, we have engineered ReRAMs comprising ITO/(UVO-treated) amorphous ZnO (a-ZnO)/MAPbI3/Ag which effectively mitigate cross-talk currents without additional components. Significantly, we successfully executed a comprehensive set of 12 distinct 2-input sequential logic functions in a single halide perovskite ReRAM unit for the first time. Furthermore, these logic functions are devoid of any dependency on external light sources, entail merely 1 or 2 logic steps, and showcase symmetrical operability. A superior resistive switching behavior was achieved by harmonizing the charge transport within the bulk MAPbI3 and the tunneling barriers at the interfaces. The outcomes indicate progress in mitigating cross-talk and executing multiple logic functions within a single halide perovskite ReRAM unit, offering a new perspective for the advancement of halide perovskite ReRAMs.
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Affiliation(s)
- Song He
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
| | - Xingyu Yu
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
| | - Juanjuan Wang
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
| | - WenKang Zhong
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
| | - Baochang Cheng
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
| | - Jie Zhao
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
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10
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Kim H, Kim JS, Choi J, Kim YH, Suh JM, Choi MJ, Shim YS, Kim SY, Lee TW, Jang HW. MAPbBr 3 Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention Time. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2457-2466. [PMID: 38166386 DOI: 10.1021/acsami.3c01450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Recent studies have focused on exploring the potential of resistive random-access memory (ReRAM) utilizing halide perovskites as novel data storage devices. This interest stems from its notable attributes, including a high ON/OFF ratio, low operating voltages, and exceptional mechanical properties. Nevertheless, there have been reports indicating that memory systems utilizing halide perovskites encounter certain obstacles pertaining to their stability and dependability, mostly assessed through endurance and retention time. Moreover, the presence of these problems can potentially restrict their practical applicability. This study explores a resistive switching memory device utilizing MAPbBr3 perovskite, which demonstrates bipolar switching characteristics. The device fabrication procedure involves a low-temperature, all-solution process. For the purpose of enhancing the device's reliability, the utilization of TPBI(2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) as an electron transfer material on the MAPbBr3 switching layer was implemented for the first time. The formation and rupture of Ag filaments in the MAPbBr3 perovskite switching layer are attributed to reduction-oxidation reactions. The TPBI is involved in the regulation of filaments during the SET and RESET processes. Hence, it can be shown that the MAPbBr3 device incorporating TPBI exhibited about 1000 endurance cycles when subjected to continuous voltage pulses. Moreover, the device consistently maintained ON/OFF ratios above 107. In contrast, the original MAPbBr3 device without TPBI demonstrated a significantly lower endurance with only 90 cycles observed. In addition, the MAPbBr3 device integrated with TPBI exhibited a retention time exceeding 3 × 103 s. The findings of this research provide compelling evidence to support the notion that electron transfer materials have promise for the development of halide perovskite memory systems owing to their favorable attributes of dependability and stability.
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Affiliation(s)
- Hyojung Kim
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Joo Sung Kim
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
| | - Jaeho Choi
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
| | - Young-Hoon Kim
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
- Department of Energy Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Min-Ju Choi
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
| | - Young-Seok Shim
- School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan 31253, Republic of Korea
| | - Soo Young Kim
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
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11
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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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12
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Fu T, Fu S, Yao J. Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude. NANOSCALE 2023; 15:4669-4681. [PMID: 36779566 DOI: 10.1039/d2nr06773k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Neuromorphic systems built from memristors that emulate bioelectrical information processing in the brain may overcome the limitations of traditional computing architectures. However, functional emulation alone may still not attain all the merits of bio-computation, which uses action potentials of 50-120 mV at least 10 times lower than signal amplitude in conventional electronics to achieve extraordinary power efficiency and effective functional integration. Reducing the functional voltage in memristors to this biological amplitude can thus advance neuromorphic engineering and bio-emulated integration. This review aims to provide a timely update on the effort and progress in this burgeoning research direction, covering the aspects of device material composition, performance, working mechanism, and potential application.
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Affiliation(s)
- Tianda Fu
- Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, MA 01003, USA.
| | - Shuai Fu
- Institute for Applied Life Sciences (IALS), University of Massachusetts, Amherst, MA 01003, USA
| | - Jun Yao
- Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, MA 01003, USA.
- Institute for Applied Life Sciences (IALS), University of Massachusetts, Amherst, MA 01003, USA
- Department of Biomedical Engineering, University of Massachusetts, Amherst, MA 01003, USA
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13
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Ma X, Zhou J, Liu Y, Xu S, Cao S. Supramolecular Framework Constructed by Dendritic Nanopolymer for Stable Flexible Perovskite Resistive Random-Access Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206852. [PMID: 36526587 DOI: 10.1002/smll.202206852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2022] [Revised: 11/30/2022] [Indexed: 06/17/2023]
Abstract
The 3D supramolecular framework (3D-SF) is constructed in this work through the hydrogen bond assisted self-assembly of spherical dendritic nanopolymer to regulate the flexibility, stability, and resistive switching (RS) performance of perovskite resistive random-access memory (RRAM). Herein, the 3D-SF network acts as the perovskite crystallization template to regulate the perovskite crystallization process due to its coordination interaction of functional groups with the perovskite grains, presenting the uniform, pinhole-free, and compact perovskite morphology for stable flexible RRAM. The 3D-SF network in situ stays at the perovskite intergranular boundaries to crosslink the perovskite grains. The RS performance of 3D-SF-modified perovskite RRAM device is evidently improved to the ON/OFF ratio of 105 , the cycle number of 500 times, and the data retention time of 104 s. The 50-days exposure of unencapsulated RRAM device at ambient environment still makes the ON/OFF ratio to be kept at ≈104 , indicating the potential of long-term stable multilevel storage in the high-density data storage. The bending action under different radius also does not change the RS performance due to the excellent bending-resistant ability of 3D-SF-modified perovskite film. This work explores a novel polymer additive strategy to construct the 3D supramolecular framework for stable flexible perovskite optoelectronic devices.
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Affiliation(s)
- Xueqing Ma
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Jianjun Zhou
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Yingliang Liu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Shengang Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Shaokui Cao
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
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14
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Yang J, Zhang F, Xiao HM, Wang ZP, Xie P, Feng Z, Wang J, Mao J, Zhou Y, Han ST. A Perovskite Memristor with Large Dynamic Space for Analog-Encoded Image Recognition. ACS NANO 2022; 16:21324-21333. [PMID: 36519795 DOI: 10.1021/acsnano.2c09569] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Reservoir computing (RC) is a computational architecture capable of efficiently processing temporal information, which allows low-cost hardware implementation. However, the previously reported memristor-based RC mostly utilized binarized data sets to reduce the difficulty of signal processing of the memristor, which inevitably induces data distortion to a certain extent, leading to poor network computing performance. Here, we report on a RC system in a fully memristive architecture based on solution-processed perovskite memristors. The perovskite memristor exhibits 10000 conductance states with a modulation range of more than 4 orders of magnitude. The obtained tens of thousands of finely spaced conductance states with a near-ideal analog property provide a sufficiently large dynamic range and enough intermediate states, which were further applied as a reservoir to map the feature information on different sequential inputs in an analog way. The computing capability of the image classification task of a Fashion-MNIST data set with a high recognition accuracy of up to 90.1% shows that the excellent analog and short-term properties of our perovskite memristor allow the hardware implementation of neuromorphic computing with a reduced training cost.
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Affiliation(s)
- Jiaqin Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Fan Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Hao-Min Xiao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Zhan-Peng Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Peng Xie
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Zihao Feng
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Junjie Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Jingyu Mao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
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15
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Jaafar AH, Meng L, Zhang T, Guo D, Newbrook D, Zhang W, Reid G, de Groot CH, Bartlett PN, Huang R. Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films. ACS APPLIED NANO MATERIALS 2022; 5:17711-17720. [PMID: 36583121 PMCID: PMC9791617 DOI: 10.1021/acsanm.2c03639] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Accepted: 11/02/2022] [Indexed: 05/25/2023]
Abstract
We report on the development of hybrid organic-inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics.
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Affiliation(s)
- Ayoub H. Jaafar
- School
of Electronics and Computer Science, University
of Southampton, Southampton, SO17 1BJ, United Kingdom
- School
of Physics and Astronomy, University of
Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Lingcong Meng
- School
of Chemistry, University of Southampton, Southampton, SO17 1BJ, United Kingdom
- School
of Chemistry, University of Lincoln, Lincoln, LN6 7TS, United Kingdom
| | - Tongjun Zhang
- School
of Electronics and Computer Science, University
of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Dongkai Guo
- School
of Electronics and Computer Science, University
of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Daniel Newbrook
- School
of Electronics and Computer Science, University
of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Wenjian Zhang
- School
of Chemistry, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Gillian Reid
- School
of Chemistry, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - C. H. de Groot
- School
of Electronics and Computer Science, University
of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Philip N. Bartlett
- School
of Chemistry, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Ruomeng Huang
- School
of Electronics and Computer Science, University
of Southampton, Southampton, SO17 1BJ, United Kingdom
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16
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Yuan Y, Wang Y, Tang X, Zhang N, Zhang W. Enhanced Resistive Switching Performance through Air-Stable Cu 2AgSbI 6 Thin Films for Flexible and Multilevel Storage Application. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53990-53998. [PMID: 36413801 DOI: 10.1021/acsami.2c15332] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Herein, the lead-free halide perovskite films with different Cu-to-Ag ratios (Cu3-xAgxSbI6, x = 0, 1, 2, or 3) have been prepared by a spin-coating method at low temperature. The enhanced resistive switching (RS) performance of more uniform SET/RESET voltages and the endurance up to at least 1600 cycles are found in the RS memory with a device structure of Ag/PMMA/Cu2AgSbI6/ITO. The device performance is not degraded under different bending angles and after 103 bending cycles, which is beneficial for flexible memory applications. The appropriately increased activation energy of the perovskites with the partial substitution of Ag atoms, which would lead to a more robust filament formed, is proposed to explain the enhanced RS mechanism. Importantly, the effective size and number of filaments measured by conductive AFM are introduced to confirm the multilevel storage effect of Cu2AgSbI6. The multilevel storage characteristics with four resistance levels are demonstrated by various compliance currents. Moreover, the Cu2AgSbI6 memory devices still exhibit enhanced RS properties and multilevel storage after 75 days of exposure to ambient conditions. Our study provides a strategy for improving the stability and high-density storage applications of halide perovskite RS memory devices.
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Affiliation(s)
- Yiming Yuan
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Yuchan Wang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Xiaosheng Tang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Nan Zhang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Wenxia Zhang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
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17
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Li D, Dong X, Cheng P, Song L, Wu Z, Chen Y, Huang W. Metal Halide Perovskite/Electrode Contacts in Charge-Transporting-Layer-Free Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203683. [PMID: 36319474 PMCID: PMC9798992 DOI: 10.1002/advs.202203683] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Metal halide perovskites have drawn substantial interest in optoelectronic devices in the past decade. Perovskite/electrode contacts are crucial for constructing high-performance charge-transporting-layer-free perovskite devices, such as solar cells, field-effect transistors, artificial synapses, memories, etc. Many studies have evidenced that the perovskite layer can directly contact the electrodes, showing abundant physicochemical, electronic, and photoelectric properties in charge-transporting-layer-free perovskite devices. Meanwhile, for perovskite/metal contacts, some critical interfacial physical and chemical processes are reported, including band bending, interface dipoles, metal halogenation, and perovskite decomposition induced by metal electrodes. Thus, a systematic summary of the role of metal halide perovskite/electrode contacts on device performance is essential. This review summarizes and discusses charge carrier dynamics, electronic band engineering, electrode corrosion, electrochemical metallization and dissolution, perovskite decomposition, and interface engineering in perovskite/electrode contacts-based electronic devices for a comprehensive understanding of the contacts. The physicochemical, electronic, and morphological properties of various perovskite/electrode contacts, as well as relevant engineering techniques, are presented. Finally, the current challenges are analyzed, and appropriate recommendations are put forward. It can be expected that further research will lead to significant breakthroughs in their application and promote reforms and innovations in future solid-state physics and materials science.
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Affiliation(s)
- Deli Li
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
- Fujian cross Strait Institute of Flexible Electronics (Future Technologies)Fujian Normal UniversityFuzhou350117P. R. China
| | - Xue Dong
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Peng Cheng
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Lin Song
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Zhongbin Wu
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM)Nanjing Tech University30 South Puzhu RoadNanjingJiangsu211816P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM)Nanjing Tech University30 South Puzhu RoadNanjingJiangsu211816P. R. China
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced MaterialsNanjing University of Posts and TelecommunicationsNanjing210023P. R. China
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18
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Ren Y, Bu X, Wang M, Gong Y, Wang J, Yang Y, Li G, Zhang M, Zhou Y, Han ST. Synaptic plasticity in self-powered artificial striate cortex for binocular orientation selectivity. Nat Commun 2022; 13:5585. [PMID: 36151070 PMCID: PMC9508249 DOI: 10.1038/s41467-022-33393-8] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Accepted: 09/13/2022] [Indexed: 11/16/2022] Open
Abstract
Get in-depth understanding of each part of visual pathway yields insights to conquer the challenges that classic computer vision is facing. Here, we first report the bioinspired striate cortex with binocular and orientation selective receptive field based on the crossbar array of self-powered memristors which is solution-processed monolithic all-perovskite system with each cross-point containing one CsFAPbI3 solar cell directly stacking on the CsPbBr2I memristor. The plasticity of self-powered memristor can be modulated by optical stimuli following triplet-STDP rules. Furthermore, plasticity of 3 × 3 flexible crossbar array of self-powered memristors has been successfully modulated based on generalized BCM learning rule for optical-encoded pattern recognition. Finally, we implemented artificial striate cortex with binocularity and orientation selectivity based on two simulated 9 × 9 self-powered memristors networks. The emulation of striate cortex with binocular and orientation selectivity will facilitate the brisk edge and corner detection for machine vision in the future applications. Designing efficient bio-inspired vision systems remains a challenge. Here, the authors report a bio-inspired striate visual cortex with binocular and orientation selective receptive field based on self-powered memristor to enable machine vision with brisk edge and corner detection in the future applications.
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Affiliation(s)
- Yanyun Ren
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, PR China.,Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, PR China
| | - Xiaobo Bu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, PR China
| | - Ming Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, PR China
| | - Yue Gong
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, PR China
| | - Junjie Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, PR China
| | - Yuyang Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, PR China
| | - Guijun Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, PR China
| | - Meng Zhang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, PR China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, PR China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, PR China.
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19
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Guan X, Lei Z, Yu X, Lin CH, Huang JK, Huang CY, Hu L, Li F, Vinu A, Yi J, Wu T. Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203311. [PMID: 35989093 DOI: 10.1002/smll.202203311] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 07/05/2022] [Indexed: 06/15/2023]
Abstract
Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.
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Affiliation(s)
- Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Zhihao Lei
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science, 398 Ruoshui Road, Suzhou, 215123, China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Feng Li
- School of Physics, Nano Institute, ACMM, The University of Sydney, Sydney, New South Wales, 2006, Australia
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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20
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Gou R, Ouyang Z, Xu C, He S, Cheng S, Shi C, Zhao J, Xiao Y, Lei S, Cheng B. Actual origin and precise control of asymmetrical hysteresis in an individual CH 3NH 3PbI 3 micro/nanowire for optical memory and logic operation. NANOSCALE HORIZONS 2022; 7:1095-1108. [PMID: 35913084 DOI: 10.1039/d2nh00209d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although CH3NH3PbI3 can present an excellent photoresponse to visible light, its application in solar cells and photodetectors is seriously hindered due to hysteresis behaviour. Moreover, for its origin, there exist different opinions. Herein, we demonstrate a route to realize precise control for the electrical transport of a single CH3NH3PbI3 micro/nanowire by constructing a two-terminal device with asymmetric Ag and C electrodes, and its hysteresis can be clearly identified as a synergistic effect of the redox reaction at the interface of the Ag electrode and the injection and ejection of holes in the interfacial traps of the C electrode rather than its bulk effect. The device can show superior bias amplitude and illumination intensity dependence of hysteresis loops with typical bipolar resistive switching features. Thus, an excellent multilevel nonvolatile optical memory can be effectively realized by the modulation of the illumination and bias, and moreover a logic OR gate operation can be successfully implemented with voltage and illumination as input signals as well. This work clearly reveals and provides a new insight of hysteresis origin that can be attributed to a synergistic effect of two asymmetrical electrode interfaces, and therefore precisely controlling its electrical transport to realize an outstanding application potential in multifunctional devices integrated with optical nonvolatile memory and logic OR gate operation.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Changsen Xu
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Song He
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shouduan Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Cencen Shi
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Yanhe Xiao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shuijin Lei
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Baochang Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
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21
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Xu Z, Guan P, Ji T, Hu Y, Li Z, Wang W, Xu N. Cationic Interstitials: An Overlooked Ionic Defect in Memristors. Front Chem 2022; 10:944029. [PMID: 35873039 PMCID: PMC9304709 DOI: 10.3389/fchem.2022.944029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2022] [Accepted: 06/08/2022] [Indexed: 11/19/2022] Open
Abstract
Metal oxide-based memristors are promising candidates for breaking through the limitations in data storage density and transmission efficiency in traditional von Neumann systems, owing to their great potential in multi-state data storage and achievement of the in-memory neuromorphic computing paradigm. Currently, the resistive switching behavior of those is mainly ascribed to the formation and rupture of conductive filaments or paths formed by the migration of cations from electrodes or oxygen vacancies in oxides. However, due to the relatively low stability and endurance of the cations from electrodes, and the high mobility and weak immunity of oxygen vacancies, intermediate resistance states can be hardly retained for multilevel or synaptic resistive switching. Herein, we reviewed the memristors based on cationic interstitials which have been overlooked in achieving digital or analog resistive switching processes. Both theoretical calculations and experimental works have been surveyed, which may provide reference and inspiration for the rational design of multifunctional memristors, and will promote the increments in the memristor fabrications.
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Affiliation(s)
- Zhemi Xu
- College of Chemistry and Material Engineering, Beijing Technology and Business University, Beijing, China
| | - Peiyuan Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, Australia
| | - Tianhao Ji
- College of Chemistry and Material Engineering, Beijing Technology and Business University, Beijing, China
| | - Yihong Hu
- College of Computer, National University of Defense Technology, Changsha, China
| | - Zhiwei Li
- College of Electronic Science and Technology, National University of Defense Technology, Changsha, China
| | - Wenqing Wang
- College of Computer, National University of Defense Technology, Changsha, China
| | - Nuo Xu
- College of Computer, National University of Defense Technology, Changsha, China
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22
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Park Y, Lee JS. Metal Halide Perovskite-Based Memristors for Emerging Memory Applications. J Phys Chem Lett 2022; 13:5638-5647. [PMID: 35708321 DOI: 10.1021/acs.jpclett.2c01303] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
There is an increased demand for next-generation memory devices with high density and fast operation speed to replace conventional memory devices. Memristors are promising candidates for next-generation memory devices because of their scalability, stable data retention, low power consumption, and fast operation. Among the various types of memristors, halide perovskites exhibit potential as emerging materials for memristors by using hysteresis based on the movement of defects or ions in halide perovskites. However, research on the implementation of perovskite materials as memristors is in its early stages; some challenges and problems must be solved to enable the practical application of halide perovskites for next-generation memory devices. From this perspective, we highlight the recent progress in memristors that use halide perovskites. Moreover, we introduce a strategy to enhance the performance and analyze the operation mechanism of memory devices that use halide perovskites. Finally, we summarize the challenges in the development of device technology to use halide perovskites in next-generation memory devices.
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Affiliation(s)
- Youngjun Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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23
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Pu L, Gu Y, Meng Q, Pang Q, Lu A, Zhao L. Different photocurrent response of Cs 4PbBr 6 particles. J Chem Phys 2022; 156:234702. [PMID: 35732532 DOI: 10.1063/5.0095106] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022] Open
Abstract
Zero-dimensional (0D) all-inorganic cesium lead halide perovskites, particularly Cs4PbBr6, have been attracting wide attention due to their excellent optical properties and stability. The research also focuses on the origin of green emission from Cs4PbBr6, which has a bandgap located in the ultraviolet B (UVB) region. So far, both Cs4PbBr6 without visible emission and with green emission have been successfully prepared; however, the origin of green emission remains controversial. Photocurrent response is one of the effective approaches to explore how the photo-excited carriers influence the photo-physical properties of materials. In our study, Cs4PbBr6 particles without visible emission and with green emission were synthesized and their photocurrent response was investigated. The former showed a positive photocurrent response, while the latter showed a negative photocurrent response. The negative response was believed to be due to a built-in electric field constructed by the charged excitons in green-emissive Cs4PbBr6. From our calculations, numerous vacancies of Br are easier to appear in green-emissive Cs4PbBr6 lattices, which could combine the neutral excitons to form charged excitons. This work may contribute to the explanation of the origin of green emission of Cs4PbBr6 to some extent.
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Affiliation(s)
- Lei Pu
- Materials Genome Institute, Shanghai University, Shanghai 200444, People's Republic of China
| | - Yarong Gu
- Materials Genome Institute, Shanghai University, Shanghai 200444, People's Republic of China
| | - Qian Meng
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning, Guangxi 530004, People's Republic of China
| | - Qi Pang
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning, Guangxi 530004, People's Republic of China
| | - Aijiang Lu
- School of Science, Donghua University, Shanghai 201820, People's Republic of China
| | - Lijuan Zhao
- Materials Genome Institute, Shanghai University, Shanghai 200444, People's Republic of China
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24
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Zhang Y, Song Y, Lu Y, Zhang Z, Wang Y, Yang Y, Dong Q, Yu Y, Qin P, Huang F. Thermochromic Cs 2 AgBiBr 6 Single Crystal with Decreased Band Gap through Order-Disorder Transition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201943. [PMID: 35570752 DOI: 10.1002/smll.202201943] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 04/23/2022] [Indexed: 06/15/2023]
Abstract
Lead-free Cs2 AgBiBr6 double perovskite is considered to be a promising alternative to the traditional lead-based analogues due to its long carrier lifetime, high structural stability, and non-toxicity. However, the large band gap limits its absorption of visible light, which is not conducive to further optoelectronic applications. Herein, a thermochromic strategy is reported to decrease the band gap of Cs2 AgBiBr6 by approximately 0.36 eV, obtaining the smallest reported band gap of 1.69 eV under ambient conditions. The experimental data indicate that after annealing the Cs2 AgBiBr6 single crystals at 400 °C, the silver (Ag) and bismuth (Bi) atoms occupy the B-site in a random way and form a partially disordered configuration. The formation of the antisite defects broadens the band edges and decreases the band gap. This work offers new insights into the preparation of narrow band gap lead-free double perovskites, and a deep understanding of their structural and electronic properties for further development in photoelectric devices.
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Affiliation(s)
- Yaru Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Yilong Song
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Yuan Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Zhuang Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Yang Wang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Yang Yang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Qingfeng Dong
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Yi Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Peng Qin
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
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25
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Yang J, Lee J, Jung Y, Kim S, Kim J, Kim S, Kim J, Seo S, Park D, Lee J, Walsh A, Park J, Park N. Mixed-Dimensional Formamidinium Bismuth Iodides Featuring In-Situ Formed Type-I Band Structure for Convolution Neural Networks. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200168. [PMID: 35307991 PMCID: PMC9108665 DOI: 10.1002/advs.202200168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Indexed: 06/14/2023]
Abstract
For valence change memory (VCM)-type synapses, a large number of vacancies help to achieve very linearly changed dynamic range, and also, the low activation energy of vacancies enables low-voltage operation. However, a large number of vacancies increases the current of artificial synapses by acting like dopants, which aggravates low-energy operation and device scalability. Here, mixed-dimensional formamidinium bismuth iodides featuring in-situ formed type-I band structure are reported for the VCM-type synapse. As compared to the pure 2D and 0D phases, the mixed phase increases defect density, which induces a better dynamic range and higher linearity. In addition, the mixed phase decreases conductivity for non-paths despite a large number of defects providing lots of conducting paths. Thus, the mixed phase-based memristor devices exhibit excellent potentiation/depression characteristics with asymmetricity of 3.15, 500 conductance states, a dynamic range of 15, pico ampere-scale current level, and energy consumption per spike of 61.08 aJ. A convolutional neural network (CNN) simulation with the Canadian Institute for Advanced Research-10 (CIFAR-10) dataset is also performed, confirming a maximum recognition rate of approximately 87%. This study is expected to lay the groundwork for future research on organic bismuth halide-based memristor synapses usable for a neuromorphic computing system.
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Affiliation(s)
- June‐Mo Yang
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Ju‐Hee Lee
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Young‐Kwang Jung
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Korea
| | - So‐Yeon Kim
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Jeong‐Hoon Kim
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Seul‐Gi Kim
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Jeong‐Hyeon Kim
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Seunghwan Seo
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Dong‐Am Park
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Jin‐Wook Lee
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon16419Korea
| | - Aron Walsh
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Korea
- Department of MaterialsImperial College LondonLondonSW7 2AZUK
| | - Jin‐Hong Park
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon16419Korea
| | - Nam‐Gyu Park
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
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26
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Meng X, Wei Q, Lin W, Huang T, Ge S, Yu Z, Zou B. Efficient Yellow Self-Trapped Exciton Emission in Sb 3+-Doped RbCdCl 3 Metal Halides. Inorg Chem 2022; 61:7143-7152. [PMID: 35485212 DOI: 10.1021/acs.inorgchem.2c00667] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Metal halide perovskites have flexible crystal and electronic structures and adjustable emission characteristics, which have very broad applications in the optoelectronic field. Among them, all-inorganic perovskites have attracted more attention than others in recent years because of their characteristics of large diffusion length, high luminescence efficiency, and good stability. In this work, Sb3+-doped RbCdCl3 crystalline powder was synthesized by a simple hydrothermal method, and its luminescence properties were studied, which showed a broad emission band with a large Stokes shift and efficient yellow light emission at about 596 nm at room temperature with a photoluminescence quantum yield of 91.7%. The emission came from the transition of the self-trapped exciton 1 (STE1) out of 3Pn (n = 0, 1, and 2) to S0 due to strong electron-phonon coupling, which scaled with increasing temperature. Moreover, its emission color became white at low temperatures due to the occurrence of transition of other self-trapped exciton 0 (STE0) state emission out of the 1S states of Sb ions to S0 in the lattice. These emission color changes may be used for temperature sensing, and this Sb3+-doped RbCdCl3 material expands the knowledge of the efficient luminescent inorganic material family for further applications of all-inorganic perovskites.
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Affiliation(s)
- Xianfu Meng
- Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and Key Lab of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education; School of Resources, Environments and Materials, Guangxi University, Nanning 530004, China
| | - Qilin Wei
- School of Physics, Guangxi University, Nanning 530004, China
| | - Wenchao Lin
- Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and Key Lab of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education; School of Resources, Environments and Materials, Guangxi University, Nanning 530004, China
| | - Tao Huang
- Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and Key Lab of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education; School of Resources, Environments and Materials, Guangxi University, Nanning 530004, China
| | - Shuaigang Ge
- School of Physics, Guangxi University, Nanning 530004, China
| | - Zongmian Yu
- Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and Key Lab of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education; School of Resources, Environments and Materials, Guangxi University, Nanning 530004, China
| | - Bingsuo Zou
- Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and Key Lab of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education; School of Resources, Environments and Materials, Guangxi University, Nanning 530004, China
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27
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Liu Q, Gao S, Xu L, Yue W, Zhang C, Kan H, Li Y, Shen G. Nanostructured perovskites for nonvolatile memory devices. Chem Soc Rev 2022; 51:3341-3379. [PMID: 35293907 DOI: 10.1039/d1cs00886b] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.
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Affiliation(s)
- Qi Liu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Song Gao
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Lei Xu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Wenjing Yue
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Chunwei Zhang
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Hao Kan
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Yang Li
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China. .,State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
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28
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Khot AC, Dongale TD, Nirmal KA, Sung JH, Lee HJ, Nikam RD, Kim TG. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications. ACS APPLIED MATERIALS & INTERFACES 2022; 14:10546-10557. [PMID: 35179364 DOI: 10.1021/acsami.1c23268] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the process compatibility, synthetic reliability, and cost-effectiveness of 2D materials must be enhanced. In this context, amorphous boron nitride (a-BN) has emerged as a potential material for future 2D nanoelectronics. Therefore, we explored the use of a-BN for multilevel resistive switching (MRS) and synaptic learning applications by fabricating a complementary metal-oxide-semiconductor (CMOS)-compatible Ag/a-BN/Pt memory device. The redox-active Ag and boron vacancies enhance the mixed electrochemical metallization and valence change conduction mechanism. The synthesized a-BN switching layer was characterized using several analyses. The fabricated memory devices exhibited bipolar resistive switching with low set and reset voltages (+0.8 and -2 V, respectively) and a small operating voltage distribution. In addition, the switching voltages of the device were modeled using a time-series analysis, for which the Holt's exponential smoothing technique provided good modeling and prediction results. According to the analytical calculations, the fabricated Ag/a-BN/Pt device was found to be memristive, and its MRS ability was investigated by varying the compliance current. The multilevel states demonstrated a uniform resistance distribution with a high endurance of up to 104 direct current (DC) cycles and memory retention characteristics of over 106 s. Conductive atomic force microscopy was performed to clarify the resistive switching mechanism of the device, and the likely mixed electrochemical metallization and valence change mechanisms involved therein were discussed based on experimental results. The Ag/a-BN/Pt memristive devices mimicked potentiation/depression and spike-timing-dependent plasticity-based Hebbian-learning rules with a high pattern accuracy (90.8%) when implemented in neural network simulations.
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Affiliation(s)
- Atul C Khot
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Tukaram D Dongale
- School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ji Hoon Sung
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ho Jin Lee
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Revannath D Nikam
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
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29
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Kumar M, Ahn YH, Iqbal S, Kim U, Seo H. Site-Specific Regulated Memristors via Electron-Beam-Induced Functionalization of HfO 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105585. [PMID: 34889027 DOI: 10.1002/smll.202105585] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Revised: 11/01/2021] [Indexed: 06/13/2023]
Abstract
Emerging nonvolatile resistive switching, also known as the memristor, works with a distinct concept that relies mainly on the change in the composition of the active materials, rather than to store the charge. Particularly for oxide-based memristors, the switching is often governed by the random and unpredicted temporal/spatial migration of oxygen defects, resulting in possessing limitations in terms of control over conduction channel formation and inability to regulate hysteresis loop opening. Therefore, site specific dynamic control of defect concentration in the active materials can offer a unique opportunity to realize on-demand regulation of memory storage and artificial intelligence capabilities. Here, high-performance, site-specific spatially scalable memristor devices are fabricated by stabilizing the conduction channel via manipulation of oxygen defects using electron-beam irradiation. Specifically, the memristors exhibit highly stable and electron-beam dose-regulated multilevel analog hysteresis loop opening with adjustable switching ratios even higher than 104 . Additionally, broad modulation of neural activities, including short- and long-term plasticity, paired-pulse facilitation, spike-timing-dependent plasticity, and dynamic multipattern memory processing, are demonstrated. The work opens a new possibility to regulate the resistive switching behavior and control mimicking of neural activities, providing a hitherto unseen tunability in two-terminal oxide-based memristors.
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Affiliation(s)
- Mohit Kumar
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Yeong Hwan Ahn
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Shahid Iqbal
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Unjeong Kim
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyungtak Seo
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
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30
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Lian H, Cheng X, Hao H, Han J, Lau MT, Li Z, Zhou Z, Dong Q, Wong WY. Metal-containing organic compounds for memory and data storage applications. Chem Soc Rev 2022; 51:1926-1982. [PMID: 35083990 DOI: 10.1039/d0cs00569j] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.
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Affiliation(s)
- Hong Lian
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Xiaozhe Cheng
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China.,Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
| | - Haotian Hao
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Jinba Han
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Mei-Tung Lau
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zikang Li
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zhi Zhou
- School of Chemistry and Materials Science, Hunan Agricultural University, Changsha 410128, China.
| | - Qingchen Dong
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Wai-Yeung Wong
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
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Li L, Chen Y, Cai C, Ma P, Ji H, Zou G. Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2103881. [PMID: 34816558 DOI: 10.1002/smll.202103881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2021] [Revised: 10/11/2021] [Indexed: 06/13/2023]
Abstract
Morre's law is coming to an end only if the memory industry can keep stuffing the devices with new functionality. Halide perovskite acts as a promising candidate for application in next-generation nonvolatile memory. As is well known, the switching ratio is the key device requirement of resistive memory to improve recognition accuracy. Here, the authors introduce an all-inorganic halide perovskite CsPbBr3 single crystal film (SCF) into resistive memory as an active layer. The Ag/CsPbBr3 /Ag memory cells exhibit reproducible resistive switching with an ultrahigh switching ratio (over 109 ) and a fast switching speed (1.8 µs). It is studied that the Schottky barrier of metal/CsPbBr3 SCF contact follows the tendency of Schottky-Mott theory, and the Fermi level pinning effect is effectively reduced. The interface S parameter of metal/CsPbBr3 SCF contact is 0.50, suggesting a great interface contact is formed. The great interface contact contributes to the steady high resistance state (HRS), and then the steady HRS leads to an ultrahigh resistive switching ratio. This work demonstrates high performance from halide perovskite SCF-based memory. The introduction of halide perovskite SCF in resistive random access memory provides great potential as an alternative in future computing systems.
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Affiliation(s)
- Lutao Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215000, China
| | - Yuan Chen
- College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215000, China
| | - Changming Cai
- Suzhou O-Light Optical Technology Co., Ltd., Suzhou, 215000, China
| | - Peipei Ma
- College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215000, China
| | - Huayong Ji
- Suzhou O-Light Optical Technology Co., Ltd., Suzhou, 215000, China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215000, China
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Liu Z, Cheng P, Li Y, Kang R, Zhang Z, Zuo Z, Zhao J. High Temperature CsPbBr xI 3-x Memristors Based on Hybrid Electrical and Optical Resistive Switching Effects. ACS APPLIED MATERIALS & INTERFACES 2021; 13:58885-58897. [PMID: 34870980 DOI: 10.1021/acsami.1c13561] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The emergence of perovskite-based memristors associated with the migration of ions has attracted attention for use in overcoming the limitations of the von Neumann computing architecture and removing the bottleneck of storage density. However, systematic research on the temperature dependence of halide perovskite-based memristors is still required due to the unavoidable thermal stability limits. In this work, mixed halide CsPbBrxI3-x-based (X = 0, 1, 2) memristors with unique electrical and optical resistive switching properties in an ambient atmosphere from room temperature to a 240 °C maximum have been successfully achieved. At room temperature, the CsPbBrxI3-x-based memristors exhibit outstanding resistive switching behaviors such as ultralow operating voltage (∼0.81, ∼0.64, and ∼0.54 V for different devices, respectively), moderate ON/OFF ratio (∼102), stable endurance (103 cycles), and long retention time (104 s). The CsPbBrxI3-x-based memristors maintain excellent repeatability and stability at high temperature. Endurance failures of CsPbI3, CsPbBrI2, and CsPbBr2I memristors occur at 90, 150, and 270 °C, respectively. Finally, nonvolatile imaging employing CsPbBr2I-based memristor arrays based on the electrical-write and optical-erase operation at 100 °C has been demonstrated. This study provides utilization potentiality in the high temperature scenarios for perovskite wearable and large-scale information devices.
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Affiliation(s)
- Zehan Liu
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Pengpeng Cheng
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Yongfei Li
- School of Information Science and Engineering, Shandong University, Qingdao 266237, P. R. China
| | - Ruyan Kang
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Ziqi Zhang
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Zhiyuan Zuo
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
- Institute of Novel Semiconductors, Shandong University, Jinan 250100, P. R. China
| | - Jia Zhao
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
- School of Information Science and Engineering, Shandong University, Qingdao 266237, P. R. China
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Abstract
Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture. In particular, halide perovskite RRAMs have attracted widespread attention in recent years because of their ionic migration nature and excellent photoelectric properties. This Perspective first provides a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications. Moreover, this Perspective attempts to detail the challenges, such as the quality of halide perovskite films, the compatible processing of device fabrication, the reliability of memory performance, and clarification of the switching mechanism, and further discusses how the outstanding challenges of halide perovskite RRAMs could be met in future research.
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Affiliation(s)
- Kaijin Kang
- Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Wei Hu
- Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Xiaosheng Tang
- Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
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Sun B, Zhou G, Sun L, Zhao H, Chen Y, Yang F, Zhao Y, Song Q. ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing. NANOSCALE HORIZONS 2021; 6:939-970. [PMID: 34652346 DOI: 10.1039/d1nh00292a] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO3 multiferroic perovskite materials make them promising candidates for application in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain wall movement originated from the ABO3 multiferroic perovskite materials promotes its memristive effect, which further highlights data storage, information processing and neuromorphic computing in diverse artificial intelligence applications. In particular, ion doping, electrode selection, and interface modulation have been demonstrated in ABO3-based memristive devices for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. These approaches presented today including controlling the dopant in the active layer, altering the oxygen vacancy distribution, modulating the diffusion depth of ions, and constructing the interface-dependent band structure were believed to be efficient methods for obtaining unique resistive switching (RS) behavior for various applications. In this review, internal physical dynamics, preparation technologies, and modulation methods are systemically examined as well as the progress, challenges, and possible solutions are proposed for next generation emerging ABO3-based memristive application in artificial intelligence.
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Affiliation(s)
- Bai Sun
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Guangdong Zhou
- School of Artificial Intelligence and School of Materials and Energy, Southwest University, Chongqing 400715, China.
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
| | - Feng Yang
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Qunliang Song
- School of Artificial Intelligence and School of Materials and Energy, Southwest University, Chongqing 400715, China.
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Zhang C, Li Y, Ma C, Zhang Q. Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100086] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022] Open
Affiliation(s)
- Cheng Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Qichun Zhang
- Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 China
- Center of Super-Diamond and Advanced Films (COSDAF) City University of Hongkong Hong Kong SAR 999077 China
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Ogle J, Powell D, Flannery L, Whittaker-Brooks L. Interplay between Morphology and Electronic Structure in Emergent Organic and π-d Conjugated Organometal Thin Film Materials. Ind Eng Chem Res 2021. [DOI: 10.1021/acs.iecr.1c03077] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Affiliation(s)
- Jonathan Ogle
- Department of Chemistry, University of Utah, Salt Lake City, Utah 84112, United States
| | - Daniel Powell
- Department of Chemistry, University of Utah, Salt Lake City, Utah 84112, United States
| | - Laura Flannery
- Department of Chemistry, University of Utah, Salt Lake City, Utah 84112, United States
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Ma C, Chen H, Yengel E, Faber H, Khan JI, Tang MC, Li R, Loganathan K, Lin Y, Zhang W, Laquai F, McCulloch I, Anthopoulos TD. Printed Memtransistor Utilizing a Hybrid Perovskite/Organic Heterojunction Channel. ACS APPLIED MATERIALS & INTERFACES 2021; 13:51592-51601. [PMID: 34696578 DOI: 10.1021/acsami.1c08583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Neuromorphic computing has the potential to address the inherent limitations of conventional integrated circuit technology, ranging from perception, pattern recognition, to memory and decision-making ( Acc. Chem. Res. 2019, 52 (4), 964-974) ( Nature 2004, 431 (7010), 796-803) ( Nat. Nanotechnol. 2013, 8 (1), 13-24). Despite their low power consumption ( Nano Lett. 2016, 16 (11), 6724-6732), traditional two-terminal memristors can perform only a single function while lacking heterosynaptic plasticity ( Nanotechnology 2013, 24 (38), 382001). Inspired by the unconditioned reflex, multiterminal memristive transistors (memtransistor) were developed to realize complex functions, such as multiterminal modulation and heterosynaptic plasticity ( Nature 2018, 554, (7693), 500-504). Here we combine a hybrid metal halide perovskite with an organic conjugated polymer to form heterojunction transistors that are responsive to both electrical and optical stimuli. We show that the synergistic effects of photoinduced ion migration in the perovskite and electronic transport in the polymer layers can be exploited to realize memristive functions. The device combines reversible, nonvolatile conductance modulation with large switching current ratios, high endurance, and long retention times. Using in situ scanning Kelvin probe microscopy and variable-temperature charge transport measurement, we correlate the collective effects of bias-induced and photoinduced ion migration with the heterosynaptic behavior observed in this hybrid memtransistor. The hybrid heterojunction channel concept is expected to be applicable to other material combinations making it a promising platform for deployment in innovative neuromorphic devices of the future.
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Affiliation(s)
- Chun Ma
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Hu Chen
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Emre Yengel
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Hendrik Faber
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Jafar I Khan
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Ming-Chun Tang
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Ruipeng Li
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Kalaivanan Loganathan
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Yuanbao Lin
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Weimin Zhang
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Frédéric Laquai
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Iain McCulloch
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center, Thuwal 23955-6900, Saudi Arabia
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Song X, Yin H, Chang Q, Qian Y, Lyu C, Min H, Zong X, Liu C, Fang Y, Cheng Z, Qin T, Huang W, Wang L. One-Dimensional (NH=CINH 3) 3PbI 5 Perovskite for Ultralow Power Consumption Resistive Memory. RESEARCH (WASHINGTON, D.C.) 2021; 2021:9760729. [PMID: 38617378 PMCID: PMC11014674 DOI: 10.34133/2021/9760729] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Accepted: 08/12/2021] [Indexed: 04/16/2024]
Abstract
Organic-inorganic hybrid perovskites (OIHPs) have proven to be promising active layers for nonvolatile memories because of their rich abundance in earth, mobile ions, and adjustable dimensions. However, there is a lack of investigation on controllable fabrication and storage properties of one-dimensional (1D) OIHPs. Here, the growth of 1D (NH=CINH3)3PbI5 ((IFA)3PbI5) perovskite and related resistive memory properties are reported. The solution-processed 1D (IFA)3PbI5 crystals are of well-defined monoclinic crystal phase and needle-like shape with the length of about 6 mm. They exhibit a wide bandgap of 3 eV and a high decomposition temperature of 206°C. Moreover, the (IFA)3PbI5 films with good uniformity and crystallization were obtained using a dual solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). To study the intrinsic electric properties of this anisotropic material, we constructed the simplest memory cell composed of only Au/(IFA)3PbI5/ITO, contributing to a high-compacted device with a crossbar array device configuration. The resistive random access memory (ReRAM) devices exhibit bipolar current-voltage (I-V) hysteresis characteristics, showing a record-low power consumption of ~0.2 mW among all OIHP-based memristors. Moreover, our devices own the lowest power consumption and "set" voltage (0.2 V) among the simplest perovskite-based memory devices (inorganic ones are also included), which are no need to require double metal electrodes or any additional insulating layer. They also demonstrate repeatable resistance switching behaviour and excellent retention time. We envision that 1D OIHPs can enrich the low-dimensional hybrid perovskite library and bring new functions to low-power information devices in the fields of memory and other electronics applications.
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Affiliation(s)
- Xuefen Song
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Hao Yin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Qing Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yuchi Qian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chongguang Lyu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Huihua Min
- Electron Microscope Laboratory, Nanjing Forestry University, Nanjing 210037, China
| | - Xinrong Zong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chao Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yinyu Fang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Zhengchun Cheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Xi’an Key Laboratory of Flexible Electronics (KLoFE), Xi’an Key Laboratory of Biomedical Materials & Engineering, Xi’an Institute of Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, 710072 Shaanxi, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
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Luo F, Ruan L, Tong J, Wu Y, Sun C, Qin G, Tian F, Zhang X. Enhanced resistive switching performance in yttrium-doped CH 3NH 3PbI 3 perovskite devices. Phys Chem Chem Phys 2021; 23:21757-21768. [PMID: 34550133 DOI: 10.1039/d1cp02878b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
In this study, yttrium-doped CH3NH3PbI3 (Y-MAPbI3) and pure CH3NH3PbI3 (MAPbI3) perovskite films have been fabricated using a one-step solution spin coating method in a glove box. X-ray diffractometry and field-emission scanning electron microscopy were used to characterize the crystal structures and morphologies of perovskite films, respectively. It was found that the orientation of the crystal changed and the grains became more uniform in Y-MAPbI3 film, compared with the pure MAPbI3 perovskite film. The films were used to prepare the resistive switching memory devices with the device structure of Al/Y-MAPbI3 (MAPbI3)/ITO-glass. The memory performance of both devices was studied and showed a bipolar resistive switching behavior. The Al/MAPbI3/ITO device had an endurance of about 328 cycles. In contrast, the Al/Y-MAPbI3/ITO device exhibited an enhanced performance with a long endurance up to 3000 cycles. Moreover, the Al/Y-MAPbI3/ITO device also showed a higher ON/OFF ratio of over 103, long retention time (≥104 s), lower operation voltage (±0.5 V) and outstanding reproducibility. Additionally, the conduction mechanism of the high resistance state transformed from space-charge limited current for a Y free device to the Schottky emission after Y doping. The present results indicate that the Al/Y-MAPbI3/ITO device has a great potential to be used in high-performance memory devices.
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Affiliation(s)
- Feifei Luo
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Liuxia Ruan
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Junwei Tong
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Yanzhao Wu
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Caixiang Sun
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Gaowu Qin
- The State Key Lab of Rolling and Automation, Northeastern University, Shenyang 110819, China
| | - Fubo Tian
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Xianmin Zhang
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
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Kwak KJ, Lee DE, Kim SJ, Jang HW. Halide Perovskites for Memristive Data Storage and Artificial Synapses. J Phys Chem Lett 2021; 12:8999-9010. [PMID: 34515487 DOI: 10.1021/acs.jpclett.1c02332] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Halide perovskites have been noted for their exotic properties such as fast ion migration, tunable composition, facile synthetic routes, and flexibility in addition to large light absorption coefficients, long carrier diffusion lengths, and high defect tolerance. These properties have made halide perovskites promising materials for memristors. Applications in the field of resistive switching memory devices and artificial synapses for neuromorphic computing are especially noteworthy. This Perspective covers state-of-the-art perovskite-based memristive devices. Moreover, the fundamental mechanisms and characteristics of perovskite-based memristors are elucidated. Interesting opportunities to improve the performance of perovskite-based memristors for commercialization are provided, including improving film uniformity and air stability, controlling the stoichiometry, finding new all-inorganic and lead-free halide perovskites, and making perovskites into single crystals or quantum dots. We expect our Perspective to be the foundation of realizing next-generation halide perovskite-based memristors.
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Affiliation(s)
- Kyung Ju Kwak
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Da Eun Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Seung Ju Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
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Lee S, Kim WB, Lee JM, Kim HJ, Choi JH, Jung HS. Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44577-44584. [PMID: 34495629 DOI: 10.1021/acsami.1c13210] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Owing to a low operation voltage, high on/off ratio, and tunable band gap, halide perovskites (HPs) are being conceived as an alternative to oxide or chalcogenide materials in resistive-switching (RS) memory devices. However, the HP-based RS memory devices face problems such as short endurance, low retention, and device stability. Herein, the oxide-passivated HP devices were fabricated by hybridizing the oxide sol-gel and halide adduct methods. The silicon oxide (SiO2)-passivation enhanced the device properties with an endurance of 6000 cycles and retention of 1.8 × 104 s. The study of activation energy using ionic conductivity and time-of-flight secondary-ion mass spectroscopy demonstrated that the migration path of the Ag ions is well-controlled by the SiO2 passivation layer. Various oxides were used as passivation materials. Especially, the zirconium oxide-passivated devices exhibit excellent properties with an endurance of 57 000 cycles and retention of 7.8 × 104 s. The high cohesive energy of oxides effectively increased the formation voltage by retarding the Ag-ion migration, leading to the improved endurance properties of the devices. This paper proposes a strategy for significantly improving the low endurance property of HP-based RS memory devices using the oxide passivation technology.
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Affiliation(s)
- SangMyeong Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Won Bin Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae Myeong Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hee Jung Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jin Hyuk Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyun Suk Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Gogoi HJ, Bajpai K, Mallajosyula AT, Solanki A. Advances in Flexible Memristors with Hybrid Perovskites. J Phys Chem Lett 2021; 12:8798-8825. [PMID: 34491743 DOI: 10.1021/acs.jpclett.1c02105] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Hybrid organic-inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also for use in healthcare technology and the Internet of Things (IoT) because of their unique properties: low weight, flexibility, compatibility, stretchability, and low power consumption. In this Perspective, we review the recent advances of various aspects of flexible memristors focusing on the selection of the flexible substrates, materials, interfaces, several resistive switching mechanisms, and different methodologies of perovskite growth. The current state of the art of the memristor as an artificial synapse, light-induced resistive switching, and logic gates is comprehensively and systematically reviewed. Finally, we briefly discuss the stability factors of perovskites and present the conclusion with a broad outlook on the progress and challenges in the field of perovskite-based flexible memristors.
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Affiliation(s)
- Himangshu Jyoti Gogoi
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - Kunal Bajpai
- Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India
| | - Arun Tej Mallajosyula
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - Ankur Solanki
- Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India
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Zhang Y, Poddar S, Huang H, Gu L, Zhang Q, Zhou Y, Yan S, Zhang S, Song Z, Huang B, Shen G, Fan Z. Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention. SCIENCE ADVANCES 2021; 7:eabg3788. [PMID: 34516897 PMCID: PMC8442916 DOI: 10.1126/sciadv.abg3788] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2021] [Accepted: 07/14/2021] [Indexed: 05/27/2023]
Abstract
Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX3; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI3 and ~7 × 109 s ultralong extrapolated retention time for polycrystalline MAPbCl3 NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI3 to MAPbCl3, culminating in the trade-off between the device switching speed and retention time.
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Affiliation(s)
- Yuting Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China
| | - Swapnadeep Poddar
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China
| | - He Huang
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China
| | - Leilei Gu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Qianpeng Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China
| | - Yu Zhou
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Shuai Yan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Sifan Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Baoling Huang
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- HKUST-Shenzhen Research Institute, No. 9 Yuexing First RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China
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Guo L, Mu B, Li MZ, Yang B, Chen RS, Ding G, Zhou K, Liu Y, Kuo CC, Han ST, Zhou Y. Stacked Two-Dimensional MXene Composites for an Energy-Efficient Memory and Digital Comparator. ACS APPLIED MATERIALS & INTERFACES 2021; 13:39595-39605. [PMID: 34378376 DOI: 10.1021/acsami.1c11014] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO2 nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.
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Affiliation(s)
- Liangchao Guo
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Boyuan Mu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ming-Zheng Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Baidong Yang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ruo-Si Chen
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yanhua Liu
- Shanghai Institute of Space Power-Sources, Shanghai 200245, P. R. China
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
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Kim SY, Yang JM, Lee SH, Park NG. A layered (n-C 4H 9NH 3) 2CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio. NANOSCALE 2021; 13:12475-12483. [PMID: 34477612 DOI: 10.1039/d1nr03245c] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Lead-based halide perovskites have been proposed as potential candidates for resistive switching memristors due to the high ON/OFF ratio along with millivolt-level low operational voltage. However, lead-free perovskites with 3-dimensional structures, such as Cs2AgBiBr6, were reported to suffer from low ON/OFF ratios. We report here that reduction of dimensionality is an effective method to improve remarkably the ON/OFF ratio in lead-free perovskites. Introduction of butylammonium (BA) into the double perovskite Cs2AgBiBr6 forms 2-dimensional BA2CsAgBiBr7, which is confirmed by the well-developed (00l) peaks from powder X-ray diffraction. A 230 nm thick BA2CsAgBiBr7 film is sandwiched in between Ag and Pt electrodes, which demonstrates bipolar resistive switching behavior with a potential ON/OFF ratio up to 107. Reliable and reproducible SET and RESET processes occur at +0.13 V and -0.20 V, respectively. Endurance of 1000 cycles and a retention time of 2 × 104 s are measured. Multi-level storage capability is confirmed by controlling the compliance current. Schottky conduction at the high resistance state (HRS) and ohmic conduction at the low resistance state (LRS) are found to be responsible for resistive switching. The stability test at 85 °C or for 22 days under ambient conditions indicates that BA2CsAgBiBr7 is durably operable.
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Affiliation(s)
- So-Yeon Kim
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
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Lee S, Wolfe S, Torres J, Yun M, Lee JK. Asymmetric Bipolar Resistive Switching of Halide Perovskite Film in Contact with TiO 2 Layer. ACS APPLIED MATERIALS & INTERFACES 2021; 13:27209-27216. [PMID: 34080828 DOI: 10.1021/acsami.1c06278] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Halide perovskite materials such as methylammonium lead iodide (CH3NH3PbI3) have attracted considerable interest for the resistive random-access memory applications, which exploit a dramatic change in the resistance by an external electric bias. In many semiconductor films, the drift, accumulation, and chain formation of defects explain the change in the resistance by an external bias. This study demonstrates that the interface of CH3NH3PbI3 with TiO2 has a significant impact on the formation and rupture of defect chains and causes the asymmetric bipolar resistive switching in the Au/CH3NH3PbI3/TiO2/FTO device (FTO = fluorine-doped tin oxide). When a negative bias is applied to the Au electrode, iodine interstitials with the lowest migration activation energy move toward TiO2 in the CH3NH3PbI3 layer and pile up at the CH3NH3PbI3-TiO2 interface. Under the same condition, oxygen vacancies in the TiO2 layer also travel to the CH3NH3PbI3-TiO2 interface and strongly attract iodine interstitials. As a result, a Schottky barrier appears at the CH3NH3PbI3-TiO2 interface, and the resistance of Au/CH3NH3PbI3/TiO2/FTO becomes much larger than that of Au/CH3NH3PbI3/FTO in the high resistance state. The frequency dependence of the capacitance confirms the asymmetric appearance of a large space charge polarization at the CH3NH3PbI3-TiO2 interface, which causes the unique bipolar resistive switching behavior with the on/off ratio (103) and retention time (>104 seconds) at -0.85 V in Au/CH3NH3PbI3/TiO2/FTO film.
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Affiliation(s)
- Seongha Lee
- Department of Mechanical Engineering & Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, United States
| | - Sarah Wolfe
- Department of Mechanical Engineering & Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, United States
| | - Jorge Torres
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, United States
| | - Minhee Yun
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, United States
| | - Jung-Kun Lee
- Department of Mechanical Engineering & Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, United States
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Younis A, Lin CH, Guan X, Shahrokhi S, Huang CY, Wang Y, He T, Singh S, Hu L, Retamal JRD, He JH, Wu T. Halide Perovskites: A New Era of Solution-Processed Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005000. [PMID: 33938612 DOI: 10.1002/adma.202005000] [Citation(s) in RCA: 51] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 10/29/2020] [Indexed: 05/26/2023]
Abstract
Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.
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Affiliation(s)
- Adnan Younis
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
- Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sakhir Campus, Zallaq, Kingdom of Bahrain
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Shamim Shahrokhi
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Yutao Wang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Tengyue He
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jose Ramon Duran Retamal
- Computer, Electrical and Mathematical Sciences and Engineering, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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48
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Miyadera T, Auchi Y, Yamamoto K, Ohashi N, Koganezawa T, Yaguchi H, Yoshida Y, Chikamatsu M. Insights into Microscopic Crystal Growth Dynamics of CH 3NH 3PbI 3 under a Laser Deposition Process Revealed by In Situ X-ray Diffraction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:22559-22566. [PMID: 33961389 DOI: 10.1021/acsami.1c04488] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The process dynamics for the vacuum deposition of methylammonium lead iodide (MAPbI3) perovskite was analyzed by in situ X-ray diffraction using synchrotron radiation. MAPbI3 was fabricated by alternatingly supplying PbI2 and methylammonium iodide via a laser deposition system installed at the synchrotron beamline BL46XU at SPring-8, and in situ crystallization analysis was conducted. Microscopic insights into the crystallization were obtained, including observation of Laue oscillation during the PbI2 growth and octahedral unit (PbI6) rotation during the transformation into perovskite. On the basis of this analysis, conditions that favor the construction of atomically flat MAPbI3 perovskite films were deduced.
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Affiliation(s)
- Tetsuhiko Miyadera
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Yuto Auchi
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
- Saitama University, Shimo-Okubo 255, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
| | - Kohei Yamamoto
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Noboru Ohashi
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Tomoyuki Koganezawa
- Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
| | - Hiroyuki Yaguchi
- Saitama University, Shimo-Okubo 255, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
| | - Yuji Yoshida
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Masayuki Chikamatsu
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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49
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Fang Y, Zhai S, Chu L, Zhong J. Advances in Halide Perovskite Memristor from Lead-Based to Lead-Free Materials. ACS APPLIED MATERIALS & INTERFACES 2021; 13:17141-17157. [PMID: 33844908 DOI: 10.1021/acsami.1c03433] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Memristors have attracted considerable attention as one of the four basic circuit elements besides resistors, capacitors, and inductors. Especially, the nonvolatile memory devices have become a promising candidate for the new-generation information storage, due to their excellent write, read, and erase rates, in addition to the low-energy consumption, multistate storage, and high scalability. Among them, halide perovskite (HP) memristors have great potential to achieve low-cost practical information storage and computing. However, the usual lead-based HP memristors face serious problems of high toxicity and low stability. To alleviate the above issues, great effort has been devoted to develop lead-free HP memristors. Here, we have summarized and discussed the advances in HP memristors from lead-based to lead-free materials including memristive properties, stability, neural network applications, and memristive mechanism. Finally, the challenges and prospects of lead-free HP memristors have been discussed.
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Affiliation(s)
- Yuetong Fang
- New Energy Technology Engineering Laboratory of Jiangsu Province & College of Telecommunications and Information Engineering & College of Electronic and Optic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Shuaibo Zhai
- New Energy Technology Engineering Laboratory of Jiangsu Province & College of Telecommunications and Information Engineering & College of Electronic and Optic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Liang Chu
- New Energy Technology Engineering Laboratory of Jiangsu Province & College of Telecommunications and Information Engineering & College of Electronic and Optic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
- Guangdong Provincial Key Lab of Nano-Micro Materials Research, School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Shenzhen 518055, People's Republic of China
| | - Jiasong Zhong
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China
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50
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Min K, Jung D, Kwon Y. Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation. Sci Rep 2021; 11:2447. [PMID: 33510234 PMCID: PMC7843989 DOI: 10.1038/s41598-021-81896-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Accepted: 12/22/2020] [Indexed: 12/02/2022] Open
Abstract
Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corresponds to a defective and conducting region with a high anion vacancy concentration, whereas the high-resistance phase corresponds to a non-defective and insulating region with a low anion-vacancy concentration. We adopt a phase variable corresponding to 0 and 1 in the insulating and conducting phases, respectively, and we change the phase variable suitably when new defects are introduced during voltage ramp-up for forming. Initially, some defects are embedded in the switching material. When the applied voltage is ramped up, the phase variable changes from 0 to 1 at locations wherein the electric field exceeds a critical value, which corresponds to the introduction of new defects via vacancy generation. The applied voltage at which the defects percolate to form a filament is considered as the forming voltage. Here, we study the forming-voltage uniformity using simulations, and we find that for typical planar-electrode devices, the forming voltage varies significantly owing to the stochastic location of the initial defects at which the electric field is "crowded." On the other hand, a protruding electrode can improve the switching uniformity drastically via facilitating the deterministic location of electric-field crowding, which also supported by the reported experimental results.
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Affiliation(s)
- Kyunghwan Min
- Department of Materials Science and Engineering, Hongik University, Seoul, 04066, Korea
| | - Dongmyung Jung
- Department of Materials Science and Engineering, Hongik University, Seoul, 04066, Korea
| | - Yongwoo Kwon
- Department of Materials Science and Engineering, Hongik University, Seoul, 04066, Korea.
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