Ultrathin Single-Crystalline CdTe Nanosheets Realized via Van der Waals Epitaxy

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Gate-controlled ionic intercalation in the van der Waals gap of 2D layered materials can induce novel phases and unlock new properties. However, this strategy is often unsuitable for densely packed 2D non-layered materials. The non-layered rhombohedral Cr2S3 is an intrinsic heterodimensional superlattice with alternating layers of 2D CrS2 and 0D Cr1/3. Here an innovative chemical vapor deposition method is reported, utilizing strategically modified metal precursors to initiate entirely new seed layers, yields ultrathin inclined-standing grown 2D Cr2S3 nanosheets with edge instead of face contact with substrate surfaces, enabling rapid all-dry transfer to other substrates while ensuring high crystal quality. The unconventional ordered vacancy channels within the 0D Cr1/3 layers, as revealed by cross-sectional scanning transmission electron microscope, permitting the insertion of Li+ ions. An unprecedented metal-insulator transition, with a resistance modulation of up to six orders of magnitude at 300 K, is observed in Cr2S3-based ionic field-effect transistors. Theoretical calculations corroborate the metallization induced by Li-ion intercalation. This work sheds light on the understanding of growth mechanism, structure-property correlation and highlights the diverse potential applications of 2D non-layered Cr2S3 superlattice.

Engineering Atomic-Scale Patterning and Resistive Switching in 2D Crystals and Application in Image Processing

The ultrathin thickness of 2D layered materials affords the control of their properties through defects, surface modification, and electrostatic fields more efficiently compared with bulk architecture. In particular, patterning design, such as moiré superlattice patterns and spatially periodic dielectric structures, are demonstrated to possess the ability to precisely control the local atomic and electronic environment at large scale, thus providing extra degrees of freedom to realize tailored material properties and device functionality. Here, the scalable atomic-scale patterning in superionic cuprous telluride by using the bonding difference at nonequivalent copper sites is reported. Moreover, benefitting from the natural coupling of ordered and disordered sublattices, controllable piezoelectricity-like multilevel switching and bipolar switching with the designed crystal structure and electrical contact is realized, and their application in image enhancement is demonstrated. This work extends the known classes of patternable crystals and atomic switching devices, and ushers in a frontier for image processing with memristors.

Alternating BiI3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection

The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI3-BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10-14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 1012 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.

Phase Engineering of 2D Spinel-Type Manganese Oxides

2D magnetic materials have been of interest due to their unique long-range magnetic ordering in the low-dimensional regime and potential applications in spintronics. Currently, most studies are focused on strippable van der Waals magnetic materials with layered structures, which typically suffer from a poor stability and scarce species. Spinel oxides have a good environmental stability and rich magnetic properties. However, the isotropic bonding and close-packed nonlayered crystal structure make their 2D growth challenging, let alone the phase engineering. Herein, a phase-controllable synthesis of 2D single-crystalline spinel-type oxides is reported. Using the van der Waals epitaxy strategy, the thicknesses of the obtained tetragonal and hexagonal manganese oxide (Mn3 O4 ) nanosheets can be tuned down to 7.1 nm and one unit cell (0.7 nm), respectively. The magnetic properties of these two phases are evaluated using vibrating-sample magnetometry and first-principle calculations. Both structures exhibit a Curie temperature of 48 K. Owing to its ultrathin geometry, the Mn3 O4 nanosheet exhibits a superior ultraviolet detection performance with an ultralow noise power density of 0.126 pA Hz-1/2 . This study broadens the range of 2D magnetic semiconductors and highlights their potential applications in future information devices.

All-in-One Optoelectronic Logic Gates Enabled by Bipolar Spectral Photoresponse of CdTe/SnSe Heterojunction

Optoelectronic logic gate devices (OLGDs) have attracted significant attention in high-density information processors; however, multifunctional logic operation in a single device is technically challenging due to the unidirectional electrical transport. In this work, we deliberately design all-in-one OLGDs based on self-powered CdTe/SnSe heterojunction photodetectors. The SnSe nanorod (NR) array is grown on the sputtered CdTe film via a glancing-angle deposition technique to form a heterojunction device. At the interface, the photovoltaic (PV) effect in the CdTe/SnSe heterojunction and the photothermoelectric (PTE) effect from the SnSe NRs are combined together to induce the reversed photocurrent, leading to a unique bipolar spectral response. The competition between PV and PTE in different spectral ranges is thus employed to control the photocurrent polarity, and five basic logic gates of OR, AND, NAND, NOR, and NOT can be performed just with a single heterojunction. Our findings indicate the large potentials of the CdTe/SnSe heterojunctions as logic units in next-generation sensing-computing systems.

Tuning 2D Magnetism in Cobalt Monoxide Nanosheets Via In Situ Nickel-Doping

Element doping has become an effective strategy to engineer the magnetic properties of two-dimensional (2D) materials and is widely explored in van der Waals layered transition metal dichalcogenides. However, the high-concentration substitution doping of 2D nonlayered metal oxides, which can preserve the original crystal texture and guarantee the homogeneity of doping distribution, is still a critical challenge due to the isotropic bonding of closed-packed structures. In this work, the synthesis of high-quality 2D nonlayered nickel-doped cobalt monoxide nanosheets via in situ atmospheric pressure chemical vapor deposition method is reported. High-resolution transmission electron microscopy confirmed that nickel atoms are doped at the intrinsic cobalt atom sites. The nickel doping concentration is stable at ≈15%, superior to most magnetic dopants doping in 2D materials and metal oxides. Magnetic measurements showed that pristine cobalt monoxide is nonferromagnetic, whereas nickel-doped cobalt monoxide exhibits robust ferromagnetic behavior with a Curie temperature of ≈180 K. Density functional theory calculations reveal that nickel atoms can improve the internal ferromagnetic correlation, giving rise to significant ferromagnetic performance of cobalt monoxide nanosheets. These results provide a valuable case for tuning the competing correlated states and magnetic ordering by substitution doping in 2D nonlayered oxide semiconductors.

Van der Waals Epitaxy Growth of 2D Single-Element Room-Temperature Ferromagnet

2D single-element materials, which are pure and intrinsically homogeneous on the nanometer scale, can cut the time-consuming material-optimization process and circumvent the impure phase, bringing about opportunities to explore new physics and applications. Herein, for the first time, the synthesis of ultrathin cobalt single-crystalline nanosheets with a sub-millimeter scale via van der Waals epitaxy is demonstrated. The thickness can be as low as ≈6 nm. Theoretical calculations reveal their intrinsic ferromagnetic nature and epitaxial mechanism: that is, the synergistic effect between van der Waals interactions and surface energy minimization dominates the growth process. Cobalt nanosheets exhibit ultrahigh blocking temperatures above 710 K and in-plane magnetic anisotropy. Electrical transport measurements further reveal that cobalt nanosheets have significant magnetoresistance (MR) effect, and can realize a unique coexistence of positive MR and negative MR under different magnetic field configurations, which can be attributed to the competition and cooperation effect among ferromagnetic interaction, orbital scattering, and electronic correlation. These results provide a valuable case for synthesizing 2D elementary metal crystals with pure phase and room-temperature ferromagnetism and pave the way for investigating new physics and related applications in spintronics.

Ultrathin ferrite nanosheets for room-temperature two-dimensional magnetic semiconductors

The discovery of magnetism in ultrathin crystals opens up opportunities to explore new physics and to develop next-generation spintronic devices. Nevertheless, two-dimensional magnetic semiconductors with Curie temperatures higher than room temperature have rarely been reported. Ferrites with strongly correlated d-orbital electrons may be alternative candidates offering two-dimensional high-temperature magnetic ordering. This prospect is, however, hindered by their inherent three-dimensional bonded nature. Here, we develop a confined-van der Waals epitaxial approach to synthesizing air-stable semiconducting cobalt ferrite nanosheets with thickness down to one unit cell using a facile chemical vapor deposition process. The hard magnetic behavior and magnetic domain evolution are demonstrated by means of vibrating sample magnetometry, magnetic force microscopy and magneto-optical Kerr effect measurements, which shows high Curie temperature above 390 K and strong dimensionality effect. The addition of room-temperature magnetic semiconductors to two-dimensional material family provides possibilities for numerous novel applications in computing, sensing and information storage.

Spin Ordering Induced Broadband Photodetection Based on Two-Dimensional Magnetic Semiconductor α-MnSe

Two-dimensional (2D) magnetic semiconductors are considered to have great application prospects in spintronic logic devices, memory devices, and photodetectors, due to their unique structures and outstanding physical properties in 2D confinement. Understanding the influence of magnetism on optical/optoelectronic properties of 2D magnetic semiconductors is a significant issue for constructing multifunctional electronic devices and implementing sophisticated functions. Herein, the influence of spin ordering and magnons on the optical/optoelectronic properties of 2D magnetic semiconductor α-MnSe synthesized by space-confined chemical vapor deposition (CVD) is explored systematically. The spin-ordering-induced magnetic phase transition triggers temperature-dependent photoluminescence spectra to produce a huge transition at Néel temperature (TN  ≈ 160 K). The magnons- and defects-induced emissions are the primary luminescence path below TN and direct internal 4 a T1g →6 A1g transition-induced emissions are the main luminescence path above TN . Additionally, the magnons and defect structures endow 2D α-MnSe with a broadband luminescence from 550 to 880 nm, and an ultraviolet-near-infrared photoresponse from 365 to 808 nm. Moreover, the device also demonstrates improved photodetection performance at 80 K, possibly influenced by spin ordering and trap states associated with defects. These above findings indicate that 2D magnetic semiconductor α-MnSe provides an excellent platform for magneto-optical and magneto-optoelectronic research.

Epitaxial Growth of Lead-Free 2D Cs3 Cu2 I5 Perovskites for High-Performance UV Photodetectors

The all-inorganic lead-free Cu-based halide perovskites represented by the Cs-Cu-I system, have sparked extensive interest recently due to their impressive photophysical characteristics. However, successive works on their potential application in light emission diodes and photodetectors rely on tiny polycrystals, in which the grain boundaries and defects may lead to the performance degradation of their embodied devices. Here, 2D all-inorganic perovskite Cs₃ Cu₂ I₅ single crystals are epitaxially grown on mica substrates, with a thickness down to 10 nm. The strong blue emission of the Cs₃ Cu₂ I₅ flakes may originate from the radiative transition of self-trapped excitons associated with a large Stocks shift and long (microsecond) decay time. Ultravioelt (UV) photodetectors based on individual Cs₃ Cu₂ I₅ nanosheets are fabricated via a swift and etching-free dry transfer approach, which reveal a high responsivity of 3.78 A W^-1 (270 nm, 5 V bias), as well as a fast response speed (τ_rise  ≈163 ms, τ_decay  ≈203 ms), outperforming congeneric UV sensors based on other 2D metal halide perovskites. This work therefore sheds light on the fabrication of green optoelectronic devices based on lead-free 2D perovskites, vital for the sustainable development of photoelectric technology.

Hexagonal Single-Crystal CoS Nanosheets: Controllable Synthesis and Tunable Oxygen Evolution Performance

Cobalt-based sulfides with variable valence states and unique physical and chemical properties have shown great potential as oxygen evolution reaction (OER) catalysts for electrochemical water-splitting reactions. However, poor morphological characteristics and a small specific surface area limit its further application. Here, hexagonal single-crystal two-dimensional (2D) CoS nanosheets with different thicknesses are successfully prepared by an atmospheric-pressure chemical vapor deposition method. Because of the advantages of the 2D structure, more exposed catalytic active sites, better reactant adsorption ability, accelerated electron transfer, and enhanced electrical conductivities can be achieved from the thinnest 5 nm CoS nanosheets (CoS-5), significantly improving OER performance. The electrochemical tests manifest that CoS-5 show an overpotential of 290 mV at 10 mA cm^-2 and a Tafel slope of 65.6 mV dec^-1 in the OER in an alkaline solution, superior to those for other thicknesses of CoS, bulk CoS, and RuO₂. For the mechanistic investigation, the lowest charge transfer resistance (R_ct) and the highest double-layer capacitance (C_dl) were obtained for CoS-5, demonstrating the faster OER kinetics and the larger active area. Density functional theory calculations further reveal the enhanced density of states around the Fermi level and higher H₂O molecule adsorption energy for thinner CoS nanosheets, promoting its intrinsic catalytic activity. Moreover, the two-electrode system with CoS-5 as the anode and Pt/C as the cathode requires only 1.56 V to attain 10 mA cm^-2 in the overall water-splitting reaction. We believe that this study will provide a fresh view for thickness-dependent catalytic performance and offers a new material for the study of electronic and energy devices.

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

2D materials are now at the forefront of state-of-the-art nanotechnologies due to their fascinating properties and unique structures. As expected, low-cost, high-volume, and high-quality 2D materials play an important role in the applications of flexible devices. Although considerable progress has been achieved in the integration of a series of novel 2D materials beyond graphene into flexible devices, a lot remains to be known. At this stage of their development, the key issues concern how to make further improvements to high-performance and scalable-production. Herein, recent progress in the quest to improve the current state of the art for 2D materials beyond graphene is reviewed. Namely, the properties and synthesis techniques of 2D materials are first introduced. Then, both the advantages and challenges of these 2D materials for flexible devices are also highlighted. Finally, important directions for future advancements toward efficient, low-cost, and stable flexible devices are outlined.

High-Performance Memristors Based on Ultrathin 2D Copper Chalcogenides

Copper chalcogenides represent a class of materials with unique crystal structures, high electrical conductivity, and earth abundance, and are recognized as promising candidates for next-generation green electronics. However, their 2D structures and the corresponding electronic properties have rarely been touched. Herein, a series of ultrathin copper chalcogenide nanosheets with thicknesses down to two unit cells are successfully synthesized, including layered Cu₂ Te, as well as nonlayered CuSe and Cu₉ S₅ , via van der Waals epitaxy, and their nonvolatile memristive behavior is investigated for the first time. Benefiting from the highly active Cu ions with low migration barriers, the memristors based on ultrathin 2D copper chalcogenide crystals exhibit relatively small switching voltage (≈0.4 V), fast switching speed, high switching uniformity, and wide operating temperature range (from 80 to 420 K), as well as stable retention and good cyclic endurance. These results demonstrate their tangible applications in future low-power, cryogenic, and high temperature harsh electronics.

FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector

Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 10⁴ AW⁻¹ and a high photoconductivity gain of 5.0 × 10⁶%, which shows great promise for further optoelectronic device applications.

Solution-processed two-dimensional materials for next-generation photovoltaics

In the ever-increasing energy demand scenario, the development of novel photovoltaic (PV) technologies is considered to be one of the key solutions to fulfil the energy request. In this context, graphene and related two-dimensional (2D) materials (GRMs), including nonlayered 2D materials and 2D perovskites, as well as their hybrid systems, are emerging as promising candidates to drive innovation in PV technologies. The mechanical, thermal, and optoelectronic properties of GRMs can be exploited in different active components of solar cells to design next-generation devices. These components include front (transparent) and back conductive electrodes, charge transporting layers, and interconnecting/recombination layers, as well as photoactive layers. The production and processing of GRMs in the liquid phase, coupled with the ability to "on-demand" tune their optoelectronic properties exploiting wet-chemical functionalization, enable their effective integration in advanced PV devices through scalable, reliable, and inexpensive printing/coating processes. Herein, we review the progresses in the use of solution-processed 2D materials in organic solar cells, dye-sensitized solar cells, perovskite solar cells, quantum dot solar cells, and organic-inorganic hybrid solar cells, as well as in tandem systems. We first provide a brief introduction on the properties of 2D materials and their production methods by solution-processing routes. Then, we discuss the functionality of 2D materials for electrodes, photoactive layer components/additives, charge transporting layers, and interconnecting layers through figures of merit, which allow the performance of solar cells to be determined and compared with the state-of-the-art values. We finally outline the roadmap for the further exploitation of solution-processed 2D materials to boost the performance of PV devices.

Atomically Thin Materials for Next-Generation Rechargeable Batteries

Atomically thin materials (ATMs) with thicknesses in the atomic scale (typically <5 nm) offer inherent advantages of large specific surface areas, proper crystal lattice distortion, abundant surface dangling bonds, and strong in-plane chemical bonds, making them ideal 2D platforms to construct high-performance electrode materials for rechargeable metal-ion batteries, metal-sulfur batteries, and metal-air batteries. This work reviews the synthesis and electronic property tuning of state-of-the-art ATMs, including graphene and graphene derivatives (GE/GO/rGO), graphitic carbon nitride (g-C₃N₄), phosphorene, covalent organic frameworks (COFs), layered transition metal dichalcogenides (TMDs), transition metal carbides, carbonitrides, and nitrides (MXenes), transition metal oxides (TMOs), and metal-organic frameworks (MOFs) for constructing next-generation high-energy-density and high-power-density rechargeable batteries to meet the needs of the rapid developments in portable electronics, electric vehicles, and smart electricity grids. We also present our viewpoints on future challenges and opportunities of constructing efficient ATMs for next-generation rechargeable batteries.

Tunable electronic and optical properties in buckling a non-lamellar B3S monolayer

We propose a novel polymorph of a hexagonal B₃S monolayer by combing structure swarm intelligence and first-principles calculations. Phonon spectrum analysis and ab initio molecular dynamics simulation indicate that the new structure is dynamically and thermally stable. Furthermore, the structure is mechanically stable and has a satisfactory elastic modulus. Our results show that the B₃S monolayer is a semiconductor with strong visible-light optical absorption. More importantly, the electronic properties of the structure are tunable via surface functionalization. For example, hydrogenation or fluorination could transform the monolayer from the semiconducting to metallic state. On the other hand, surface oxidation could significantly enhance both carrier mobility and near-infrared optical absorption. Furthermore, we also discovered that the monolayer possesses satisfactory storage capacity for H₂.

Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review

Herein, we aim to evaluate the photodetector performance of various nanostructured materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet (UV), visible, and infrared (IR) regions. Specifically, semiconductor-based metal oxides such as ZnO, Ga₂O₃, SnO₂, TiO₂, and WO₃ are the majority preferred materials for UV photodetection due to their broad band gap, stability, and relatively simple fabrication processes. Whereas, the graphene-based hetero- and nano-structured composites are considered as prominent visible light active photodetectors. Interestingly, graphene exhibits broad band spectral absorption and ultra-high mobility, which derives graphene as a suitable candidate for visible detector. Further, due to the very low absorption rate of graphene (2%), various materials have been integrated with graphene (rGO-CZS, PQD-rGO, N-SLG, and GO doped PbI₂). In the case of IR photodetectors, quantum dot IR detectors prevails significant advantage over the quantum well IR detectors due to the 0-D quantum confinement and ability to absorb the light with any polarization. In such a way, we discussed the most recent developments on IR detectors using InAs and PbS quantum dot nanostructures. Overall, this review gives clear view on the development of suitable device architecture under prominent nanostructures to tune the photodetector performance from UV to IR spectral regions for wide-band photodetectors.

A Universal Atomic Substitution Conversion Strategy Towards Synthesis of Large-Size Ultrathin Nonlayered Two-Dimensional Materials

Nonlayered two-dimensional (2D) materials have attracted increasing attention, due to novel physical properties, unique surface structure, and high compatibility with microfabrication technique. However, owing to the inherent strong covalent bonds, the direct synthesis of 2D planar structure from nonlayered materials, especially for the realization of large-size ultrathin 2D nonlayered materials, is still a huge challenge. Here, a general atomic substitution conversion strategy is proposed to synthesize large-size, ultrathin nonlayered 2D materials. Taking nonlayered CdS as a typical example, large-size ultrathin nonlayered CdS single-crystalline flakes are successfully achieved via a facile low-temperature chemical sulfurization method, where pre-grown layered CdI₂ flakes are employed as the precursor via a simple hot plate assisted vertical vapor deposition method. The size and thickness of CdS flakes can be controlled by the CdI₂ precursor. The growth mechanism is ascribed to the chemical substitution reaction from I to S atoms between CdI₂ and CdS, which has been evidenced by experiments and theoretical calculations. The atomic substitution conversion strategy demonstrates that the existing 2D layered materials can serve as the precursor for difficult-to-synthesize nonlayered 2D materials, providing a bridge between layered and nonlayered materials, meanwhile realizing the fabrication of large-size ultrathin nonlayered 2D materials.

Emerging 2D Memory Devices for In-Memory Computing

It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.

An in situ TEM nanoindentation-induced new nanostructure in cadmium zinc telluride

Phase transformations occurring in a solid govern the structural and physical properties significantly. Nevertheless, deformation-induced phase transition in a soft-brittle solid has not been demonstrated yet. Soft-brittle cadmium zinc telluride (CZT) based instruments have produced technological breakthroughs in the semiconductor industry, and therefore their phase transformations have been widely investigated during the past 60 years. In this study, in situ transmission electron microscopy (TEM) nanoindentation was performed on CZT, and it was found that no brittle fracture occurred at a peak load of 41.9 μN, corresponding to a stress of 1.75 GPa. A new nanostructure induced by in situ TEM nanoindentation was observed, consisting of a single crystal, slip bands, stacking faults, a superlattice, a new tetragonal phase, and Moiré fringes. The new tetragonal phase was formed by partial Cd and Te atoms in the (111[combining macron]) plane slipping along the [1[combining macron]21[combining macron]] orientation, which was elucidated by ab initio simulations. It belongs to a tetragonal crystal system, and the lattice distances along the X and Y axes were 0.382 and 0.376 nm, respectively. Our findings provide new insights into the deformation-induced phase transformation for a soft-brittle solid, and have application potential in solar cells, radiation detectors, and medical imaging, quantum, flexible electronic and optoelectronic devices.

Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance

The primary challenge for the widespread application of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during the traditional metal integration process, difficulties arise due to inevitable physical damage and selective doping. Two-dimensional metal-semiconductor junctions have attracted attention for the potential application to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions where the upper NiTe2 selectively nucleates at the edge of the underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirmed that NiTe2-MoS2 metal-semiconductor vertical junctions had been successfully synthesized. The electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) showed higher field-effect mobilities (μ FE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistor performance with metal-semiconductor junctions.

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.

Controllable synthesis of non-layered two-dimensional plate-like CuGaSe2 materials for optoelectronic devices

CuGaSe2 semiconductor materials, as an important member of the I-III-VI2 family, have sparked tremendous attention due to their fascinating structure-related properties and promising applications in solar energy storage and conversion. Nevertheless, the controllable preparation of two-dimensional (2D) CuGaSe2 structures is still a daunting challenge owing to the intrinsic non-layered crystal structure and inaccessible reactivity-matching of multiple reaction precursors, which will seriously impede the much deeper research progress on their properties and applications. Herein, non-layered 2D CuGaSe2 plates possessing high crystallinity, and uniform size and morphology have been first synthesized by a feasible cation exchange strategy. Because the fabrication of 2D CuGaSe2 crystals is rarely reported, a particular highlight is laid on the compositional analysis, structural characterization, and formation mechanism. Furthermore, the optical absorption and optoelectronic measurements reveal that the as-synthesized CuGaSe2 plates exhibit high light harvesting capacity and excellent photoelectric performance. This study opens up a new avenue for the feasible fabrication of non-layered CuGaSe2 plates possessing a high-quality crystalline structure and provides a promising candidate for the development of novel solar energy conversion and storage devices.

Photothermoelectric SnTe Photodetector with Broad Spectral Response and High On/Off Ratio

A broadband photodetector with high performance is highly desirable for the optoelectric and sensing application. Herein, we report a "photo-thermo-electric" (PTE) detector based on an ultrathin SnTe film. The (001)-oriented SnTe films with the wafer size scale are epitaxially grown on the surface of sodium chloride crystals by a scalable sputtering method. Due to the giant PTE effect under laser spot excitation on the asymmetric position between two terminals, a built-in electrical field is produced to drive bulk carriers for a self-powered photodetector, leading to a broad spectral response in the wavelength range from 404 nm to 10.6 μm far beyond the limitation of the energy band gap. Significantly, the photodetector displays a high on/off photoswitching ratio of over 10⁵ with a suppressed dark current, which is 4-5 orders of magnitude higher than that of other reported SnTe-based detectors. Under zero external bias, the device yields the highest detectivity of ∼1.3 × 10¹⁰ cm Hz^1/2 W^-1 with a corresponding responsivity of ∼3.9 mA W^-1 and short rising/falling times of ∼78/84 ms. Furthermore, the photodetector transferred onto the flexible template exhibits excellent mechanical flexibility over 300 bending cycles. These findings offer feasible strategies toward designing and developing low-power-consumption wearable optoelectronics with competitive performance.

Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large-area SnS layers exhibit a broadband spectral response ranging from deep-ultraviolet (UV) to near-infrared (NIR) wavelengths (i.e., 280-850 nm) with fast photodetection capabilities. For single-unit-cell-thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W^-1 ) than commercial photodetectors at a room-temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high-performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.

Ultrathin High-Quality SnTe Nanoplates for Fabricating Flexible Near-Infrared Photodetectors

This work demonstrates a controlled van der Waals growth of two-dimensional SnTe nanoplates on mica substrates and their applications in flexible near-infrared photodetectors. The growth of nonlayered rock-salt structured SnTe crystals into two-dimensional SnTe nanoplate structures is mainly caused by the two-dimensional nature of the mica surface, which also results in the ultrathin nanoplates obtained (3.6 nm, equivalent to 6 monolayers). Furthermore, it is found that the shape of the SnTe nanoplates can be well engineered by changing their growth temperature due to the competition between the surface energy of the {100} crystallographic plane and that of the {111} plane. As a result of the favorable physical properties of topological crystalline insulators such as metallic surface (high electron mobility) and narrow bandgap, near-infrared photodetectors based on single SnTe nanoplate with the thickness of 3.6 nm present excellent device performance with a responsivity of 698 mA/W, a specific detectivity of 3.89 × 10⁸ jones, and an external quantum efficiency of 88.5% under the illumination of a 980 nm laser at room temperature (300 K) without applying a gate voltage (V_g). Upon increasing the gate voltage from -30 to 30 V, the detector responsivity increases from 2.96 to 723 mA/W and the detector detectivity increases from 2.4 × 10⁶ to 5.3 × 10⁸ jones. Furthermore, upon increasing the thickness of SnTe nanoplate from 3.6 to 35 nm, the detector responsivity increases from 0.698 to 1.468 A/W. The device performance measured after bending for 300 times as well as after bending with different radii presents no obvious degradation, which exhibits the excellent flexibility of the SnTe nanoplate detectors. These results not only contribute to a deep understanding of the mechanisms of the van der Waals growth of nonlayered materials into two-dimensional structure but also demonstrate the immense potential of SnTe nanoplates to be used in flexible near-infrared detectors.

Ultra-long high quality catalyst-free WO3 nanowires for fabricating high-performance visible photodetectors

This work presents a study on the controlled growth of WO₃ nanowires via chemical vapor deposition without catalyst, and their potential applications in visible photodetectors. The influence of growth conditions on the morphology of WO₃ nanowires is studied in order to understand the growth mechanism of WO₃ nanowires, and ultra-long (60 [Formula: see text], the longest one ever reported) WO₃ nanowires with a spindle shape are achieved by optimizing the growth conditions. It was found that the length of WO₃ nanowires increases from 15 [Formula: see text] to 60 [Formula: see text] with increasing the argon carrier gas flow rate from 30 sccm to 90 sccm, and then saturates with further increasing the argon carrier gas flow rate. However, the length of WO₃ nanowires reduces from 60 [Formula: see text] to 19 [Formula: see text] with increasing the tube inner pressure from 2.5 Torr to 3.5 Torr. The photoconductor detectors based on WO₃ single nanowires present excellent device performance with a responsivity as high as 19 A W^-1 at a bias of 0.1 V, a detectivity as high as 1.06 × 10¹¹ Jones, and a response (rising and decay) time as short as 8 ms under the illumination of a 404 nm laser. These results indicate the great potential of WO₃ nanowires for applications in fabricating high performance visible photodetectors.

An asymmetric contact-induced self-powered 2D In2S3 photodetector towards high-sensitivity and fast-response

Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieved a self-powered operation by adopting a geometrical asymmetry in the device architecture, where a triangular non-layered 2D In2S3 flake with an asymmetric contact is combined with the traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA W-1), high detectivity (1.56 × 1010 Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In2S3/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In2S3/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.

The High Anisotropy of the Epitaxial Growth of the Well-Aligned Sb2Se3 Nanoribbons on Mica

One-dimensional semiconductor nanostructures, which are different from those of bulk materials, have attracted considerable interest in either scientific research or practical application. Herein, the Sb₂Se₃ nanoribbons have been successfully synthesized by the epitaxial growth process on mica using the rapid physical vapor deposition method. The density of the Sb₂Se₃ nanoribbons increased quickly when the temperature decreased, and finally, the nanoribbons connected to each other and formed a network structure even in film. These nanoribbons were all well aligned along the preferred direction that either is parallel to each other or forms 60° angles. Further structural investigation demonstrated that the Sb₂Se₃ nanoribbons grew along the [001] directions, which are aligned along the directions [11̅0] and [100] or [100] and [110] on the mica surface. Then, an asymmetric lattice mismatch growth mechanism causing incommensurate heteroepitaxial lattice match between the Sb₂Se₃ and mica crystal structure was suggested. Furthermore, a polarized photodetector based on the film with the well-aligned Sb₂Se₃ nanoribbons was constructed, which illustrated strong photosensitivity and high anisotropic in-plane transport either in the dark or under light. The incommensurate heteroepitaxial growth method shown here may provide access to realize well-ordered nanostructures of other inorganic materials and promote the anisotropic photodetector industrialization.

Synthesis and Optoelectronic Applications of a Stable p-Type 2D Material: α-MnS

α-MnS, as a nonlayered p-type material with a wide band gap of 2.7 eV, has been expected to supplement the scarcity of two-dimensional (2D) p-type semiconductors, which are desperately required for constructing atomically thin p-n junctions. However, the preparation and property investigation of 2D α-MnS has scarcely been reported so far. Herein, we report the controlled synthesis of ultrathin large-scale α-MnS single crystals down to 4.78 nm via a facile chemical vapor deposition (CVD) method. Importantly, top-gating field-effect transistors based on the as-synthesized α-MnS nanosheets show p-type transport behavior with an ultrahigh on/off ratio exceeding 10⁶, surpassing most reported p-type 2D materials. Meanwhile, α-MnS phototransistors exhibit an ultrahigh detectivity of 3.2 × 10¹⁴ Jones, as well as an excellent photoresponsivity of 139 A/W and a fast response time of 12 ms. Besides, outstanding environmental stability and admirable flexibility have also been demonstrated in the as-synthesized α-MnS nanosheets. We believe that this work broadens the scope of the CVD synthesis strategy for various p-type 2D materials and demonstrates their significant application potentials in electronics and optoelectronics.

Precise Vapor-Phase Synthesis of Two-Dimensional Atomic Single Crystals

Two-dimensional atomic single crystals (2DASCs) have drawn immense attention because of their potential for fundamental research and new technologies. Novel properties of 2DASCs are closely related to their atomic structures, and effective modulation of the structures allows for exploring various practical applications. Precise vapor-phase synthesis of 2DASCs with tunable thickness, selectable phase, and controllable chemical composition can be realized to adjust their band structures and electronic properties. This review highlights the latest advances in the precise vapor-phase synthesis of 2DASCs. We thoroughly elaborate on strategies toward the accurate control of layer number, phase, chemical composition of layered 2DASCs, and thickness of non-layered 2DASCs. Finally, we suggest forward-looking solutions to the challenges and directions of future developments in this emerging field.

Anti-Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices

Van der Waals materials and their heterostructures provide a versatile platform to explore new device architectures and functionalities beyond conventional semiconductors. Of particular interest is anti-ambipolar behavior, which holds potentials for various digital electronic applications. However, most of the previously conducted studies are focused on hetero- or homo- p-n junctions, which suffer from a weak electrical modulation. Here, the anti-ambipolar transport behavior and negative transconductance of MoTe₂ transistors are reported using a graphene/h-BN floating-gate structure to dynamically modulate the conduction polarity. Due to the asymmetric electrical field regulating effect on the recombination and diffusion currents, the anti-ambipolar transport and negative transconductance feature can be systematically controlled. Consequently, the device shows an unprecedented peak resistance modulation factor (≈5 × 10³ ), and effective photoexcitation modulation with distinct threshold voltage shift and large photo on/off ratio (≈10⁴ ). Utilizing this large modulation effect, the voltage-transfer characteristics of an inverter circuit variant are further studied and its applications in Schmitt triggers and multivalue output are further explored. These properties, in addition to their proven nonvolatile storage, suggest that such 2D heterostructured devices display promising perspectives toward future logic applications.

Ultrathin Magnetic 2D Single-Crystal CrSe

2D magnetic materials have generated an enormous amount of attention due to their unique 2D-limited magnetism and their potential applications in spintronic devices. Recently, most of this research has focused on 2D van der Waals layered magnetic materials exfoliated from the bulk with random size and thicknesses. Controllable growth of these materials is still a great challenge. In contrast, 2D nonlayered magnetic materials have rarely been investigated, not especially regarding their preparation. Cr_n X (X = S, Se and Te; 0 < n < 1), a class of nonlayered transition metal dichalcogenides, has rapidly attracted extensive attention due to its abundance of structural compounds and unique magnetic properties. Herein, the controlled synthesis of ultrathin CrSe crystals, with grain size reaching the sub-millimeter scale, on mica substrates via an ambient pressure chemical vapor deposition (CVD) method is demonstrated. A continuous CrSe film can also be achieved via precise control of the key growth parameters. Importantly, the CVD-grown 2D CrSe crystals possess obvious ferromagnetic properties at temperatures below 280 K, which has not been observed experimentally before. This work broadens the scope of the CVD growth of 2D magnetic materials and highlights their significant application possibilities in spintronics.

Ultrahigh-Detectivity Photodetectors with Van der Waals Epitaxial CdTe Single-Crystalline Films

Van der Waals epitaxy (vdWE) is crucial for heteroepitaxy of covalence-bonded semiconductors on 2D layered materials because it is not subject to strict substrate requirements and the epitaxial materials can be transferred onto various substrates. However, planar film growth in covalence-bonded semiconductors remains a critical challenge of vdWE because of the extremely low surface energy of 2D materials. In this study, direct growth of wafer-scale single-crystalline cadmium telluride (CdTe) films is achieved on 2D layered transparent mica through molecular beam epitaxy. The vdWE CdTe films exhibit a flat surface resulting from the 2D growth regime, and high crystal quality as evidenced by a low full width at half maximum of 0.05° for 120 nm thick films. A perfect lattice fringe appears at the interfaces, implying a fully relaxed state of the epitaxial CdTe films correlated closely to the unique nature of vdWE. Moreover, the vdWE CdTe photodetectors demonstrate not only ultrasensitive optoelectronic response with optimal responsivity of 834 A W^-1 and ultrahigh detectivity of 2.4 × 10¹⁴ Jones but also excellent mechanical flexibility and durability, indicating great potential in flexible and wearable devices.

Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr2S3 Nanosheets

Two-dimensional (2D) magnetic materials provide an ideal platform for the application in spintronic devices due to their unique spin states in nanometer scale. However, recent research on the exfoliated monolayer magnetic materials suffers from the instability in ambient atmosphere, which needs extraordinary protection. Hence the controllable synthesis of 2D magnetic materials with good quality and stability should be addressed. Here we report for the first time the van der Waals (vdW) epitaxial growth of one-unit-cell-thick air-stable ferrimagnet Cr₂S₃ semiconductor via a facile chemical vapor deposition method. Single crystal Cr₂S₃ with the domain size reaching to 200 μm is achieved. Most importantly, we observe the as grown Cr₂S₃ with a Néel temperature ( T_N) of up to 120 K and a maximum saturation magnetic momentum of up to 65 μemu. As the temperature decreases, the samples show a transition from soft magnet to hard magnet with the highest coercivity of 1000 Oe. The one-unit-cell-thick Cr₂S₃ devices show a p-type transfer behavior with an on/off ratio over 10³. Our work highlights Cr₂S₃ monolayer as an ideal magnetic semiconductor for 2D spintronic devices. The vdW epitaxy of nonlayered magnets introduces a new route for realizing magnetism in 2D limit and provides more application potential in the 2D spintronics.

A ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors

Layered two-dimensional (2D) materials often display unique functionalities for flexible 2D optoelectronic device applications involving natural flexibility and tunable bandgap by bandgap engineering. Composition manipulation by alloying of these 2D materials represents an effective way in fulfilling bandgap engineering, which is particularly true for SnS_2xSe_2(1−x) alloys showing a continuous bandgap modulation from 2.1 eV for SnS₂ to 1.0 eV for SnSe₂. Here, we report that a ternary SnS_1.26Se_0.76 alloy nanosheet can serve as an efficient flexible photodetector, possessing excellent mechanical durability, reproducibility, and high photosensitivity. The photodetectors show a broad spectrum detection ranging from visible to near infrared (NIR) light. These findings demonstrate that the ternary SnS_1.26Se_0.76 alloy can act as a promising 2D material for flexible and wearable optoelectronic devices.

Bandgap engineering of a ternary SnS_1.26Se_0.76 alloy for flexible broadband photodetectors.

Antimonene: From Experimental Preparation to Practical Application

The two-dimensional material antimonene was first reported in 2015. Subsequently, its unique properties, including enhanced stability, high carrier mobility, and band-gap tunability, were predicted theoretically. These theoretical results have motivated experimental confirmation and thus a better understanding of this new material. Recently, the preparation of antimonene and its attempted use in several applications have attracted extensive attention. This Minireview focuses on both the experimental preparation and practical applications of antimonene, including the results of recent research on novel methods of preparing antimonene and its potential applications in optoelectronic devices, electrocatalysis, energy storage, and cancer therapy. Moreover, it provides insight that could further improve the preparation of antimonene and also describes numerous opportunities for application.

Low Threshold Fabry-Pérot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets

Lead Iodide (PbI₂ ) is a layered semiconductor with direct band gap holding great promises in green light emission and detection devices. Recently, PbI₂ planar lasers are demonstrated using hexagonal whispering-gallery-mode microcavities, but the lasing threshold is quite high. In this work, lasing from vapor phase deposition derived PbI₂ trapezoidal nanoplatelets (NPs) with threshold that is at least an order of magnitude lower than the previous value is reported. The growth mechanism of the trapezoidal NPs is explored and attributed to the synergistic effects of van der Waals interactions and lattice mismatching. The lasing is enabled by the population inversion of n = 1 excitons and the optical feedback is provided by the Fabry-Pérot oscillation between the side facets of trapezoidal NPs. The findings not only advance the understanding of growth and photophysics mechanism of PbI₂ nanostructures but also provide ideas to develop low threshold ultrathin lasers.

Synthesis of Easily Transferred 2D Layered BiI3 Nanoplates for Flexible Visible-Light Photodetectors

Bismuth triiodide, BiI₃, is one of the promising 2D layered materials from the family of metal halides. The unique electronic structure and properties make it an attractive material for the room-temperature gamma/X-ray detectors, high-efficiency photovoltaic absorbers, and Bi-based organic-inorganic hybrid perovskites. Other possibilities including optoelectronic devices and optical circuits are envisioned but rarely experimentally confirmed yet. Here, we report the synthesis of vertical 2D BiI₃ nanoplates using the physical vapor deposition mechanism. The obtained products were found easy to be separated and transferred to other substrates. Photodetectors employing such 2D nanoplates on polyethylene terephthalate substrate are demonstrated to be quite sensitive to red light (635 nm) with good responsivity (2.8 A W^-1), fast stable photoresponse (3/9 ms for raise/decay times), and remarkable specific detectivity (1.2 × 10¹² jones), which attest to high comparability of the assembled components with many latest 2D nanostructured light sensors. In addition, such photodetectors exhibit outstanding mechanical stability and durability under different bending strains within the theoretically affordable levels, suggesting a variety of potential applications of 2D BiI₃ for flexible devices.

Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement

Two-dimensional (2D) materials beyond graphene have attracted considerable interest because of the zero bandgap drawbacks of graphene. Transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are the potential candidates for next 2D materials because atomically thin layers of TMDs exhibit unique and versatile electrical and optical properties. Although bulk TMDs materials have an indirect bandgap, an indirect-to-direct bandgap transition is observed in monolayers of TMDs (MoS2, WSe2, and MoSe2). Optical properties of TMD films can be improved by the introduction of structural defects. For example, large-area spatial tuning of the optical transition of bulk MoS2 films is achieved by using an anodic aluminum oxide (AAO) template to induce structural defects such as edge- and terrace-terminated defects in a nanomesh structure. Strong photoluminescence emission peaks with a band gap of 1.81 eV are observed, possibly because of radiative transition at the defect sites. This work shows that the AAO template lithography method has potential for the production of homogenous large-scale nanomesh structures for practical semiconductor processing applications in future MoS2-based electronic and optical devices.

2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection

Two-dimensional materials beyond graphene and TMDs can be promising candidates for wide-spectra photodetection.