Broadband MoS2 Field-Effect Phototransistors: Ultrasensitive Visible-Light Photoresponse and Negative Infrared Photoresponse

Advances in borophene based photodetectors for a sustainable tomorrow: a comprehensive review

Borophene, with its unique properties such as excellent conductivity, high thermal stability, and tunable electronic band structure, holds immense promise for advancing photodetector technology. These qualities make it an attractive material for enhancing the efficiency and performance of photodetectors across various wavelengths. Research so far has highlighted borophene's potential in improving sensitivity, response time, and overall functionality in optoelectronic devices. However, to fully realize the potential of borophene-based photodetectors, several challenges must be addressed. A major hurdle is the reproducibility and scalability of borophene synthesis, which is essential for its widespread use in practical applications. Furthermore, understanding the underlying physics of borophene and optimizing the device architecture are critical for achieving consistent performance under different operating conditions. These challenges must be overcome to enable the effective integration of borophene into commercial photodetector devices. A thorough evaluation of borophene-based photodetectors is necessary to guide future research and development in this field. This review will provide a detailed account of the current synthesis methods, discuss the experimental results, and identify the challenges that need to be addressed. Additionally, the review will explore potential strategies to overcome these obstacles, paving the way for significant advancements in solar cells, light-based sensors, and environmental monitoring systems. By addressing these issues, the development of borophene-based photodetectors could lead to substantial improvements in optoelectronic technology, benefiting various applications and industries.

Abnormal Relaxation Behavior of Excited Electrons in the Flat Band of Kagome Compound Nb3Cl8

Carrier dynamics is crucial in semiconductors, and it determines their conductivity, response time, and overall functionality. In flat bands (FBs), carriers with high effective masses are predicted to host unconventional transport properties. The FBs usually overlap with other trivial energy bands, however, making it difficult to accurately distinguish their carrier dynamics. In this paper, we have investigated the flat-band carrier dynamics of excited electrons in Nb3Cl8, which hosts ideal nonoverlapping FBs near the Fermi level. The optical transition between Hubbard bands is abnormally weakened, exhibiting weak interband absorption and its related slow photoresponse with a time constant of ∼120 s, which are associated with flat-band Mottness-induced large electron effective mass and parity-forbidden transitions. Besides, the localized states created by chlorine vacancies also act as trapping centers for carriers with a time constant of ∼600 s, which are similar to those of the compact localized states of the FB, making the relaxation behavior even more extraordinary. The presence and impacts of atomic defects are confirmed experimentally and theoretically. This work has revealed the abnormal flat-band carrier dynamics of Nb3Cl8, which is essential for understanding the optical, electrical, and thermal transport properties of flat-band materials.

Negative Photoconductivity Transistors for Visuomorphic Computing

Visuomorphic computing aims to simulate and potentially surpass the human retina by mimicking biological visual perception with an artificial retina. Despite significant progress, challenges persist in perceiving complex interactive environments. Negative photoconductivity transistors (NPTs) mimic synaptic behavior by achieving adjustable positive photoconductivity (PPC) and negative photoconductivity (NPC), simulating "excitation" and "inhibition" akin to sensory cell signals. In complex interactive environments, NPTs are desired for visuomorphic computing that can achieve a better sense of information, lower power consumption, and reduce hardware complexity. In this review, it is started by introducing the development process of NPTs, while placing a strong emphasis on the device structures, working mechanisms, and key performance parameters. The common material systems employed in NPTs based on their functions are then summarized. Moreover, it is proceeded to summarize the noteworthy applications of NPTs in optoelectronic devices, including advanced multibit nonvolatile memory, optoelectronic logic gates, optical encryption, and visual perception. Finally, the challenges and prospects that lie ahead in the ongoing development of NPTs are addressed, offering valuable insights into their applications in optoelectronics and a comprehensive understanding of their significance.

Broadband Negative Photoconductive Response in Carbon Nanodots

Due to the broadband response and low selectivity of external light, negative photoconductivity (NPC) effect holds great potential applications in photoelectric devices. Herein, different photoresponsive carbon nanodots (CDs) are prepared from diverse precursors and the broadband response from the NPC CDs are utilized to achieve the optoelectronic logic gates and optical imaging for the first time. In detail, the mcu-CDs which are prepared by the microwave-assisted polymerization of citric acid and urea possess the large specific surface area and abundant hydrophilic groups as sites for the adsorption of H2O molecules and thereby present a high conductivity in dark. Meanwhile, the low affinity of mcu-CDs to H2O molecules permits the light-induced desorption of H2O molecules by heat effect and thus endow the mcu-CDs with a low conductivity under illumination. The easy absorption and desorption of H2O molecules contribute to the extraordinary NPC of mcu-CDs. With the broadband NPC response in CDs, the optoelectronic logic gates and flexible optical imaging system are established, achieving the applications of "NOR" or "NAND" logic operations and high-quality optical images. These findings unveil the unique optoelectronic properties of CDs, and have the potential to advance the applications of CDs in optoelectronic devices.

Photodetectors Based on MASnI3/MoS2 Hybrid-Dimensional Heterojunction Transistors: Breaking the Responsivity-Speed Trade-Off

Hybrid-dimensional heterojunction transistor (HDHT) photodetectors (PDs) have achieved high responsivities but unfortunately are still with unacceptably slow response speeds. Here, we propose a MASnI3/MoS2 HDHT PD, which exhibits the possibility to obtain high responsivity and fast response simultaneously. By exploring the detailed photoelectric responses utilizing a precise optoelectronic coupling simulation, the electrical performance of the device is optimally manipulated and the underlying physical mechanisms are carefully clarified. Particularly, the influence and modulation characteristics of the trap effects on the carrier dynamics of the PDs are investigated. We find that the localized trap effect in perovskite, especially at its top surface, is primarily responsible for the high responsivity and long response time; moreover, it is normally hard to break such a responsivity-speed trade-off due to the inherent limitation of the trap effect. By synergistically coupling the photogating effect, trap effect, and gate regulation, we indicate that it is possible to achieve an enhancement of the responsivity-bandwidth product by about 3 orders of magnitude. This study facilitates a fine modulation of the responsivity-speed relationship of hybrid-dimensional PDs, enabling breaking the traditional responsivity-speed trade-off of many PDs.

Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation

Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS2/PtSe2 with a current rectification ratio exceeding 105 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.

Negative Photoconductivity of Fe3GeTe2 Crystal with Native Heterostructure for Ultraviolet to Terahertz Ultra-Broadband Photodetection

Gaining insight into the photoelectric behavior of ferromagnetic materials is significant for comprehensively grasping their intrinsic properties and broadening future application fields. Here, through a specially designed Fe3GeTe2/O-Fe3GeTe2 heterostructure, first, the broad-spectrum negative photoconductivity phenomenon of ferromagnetic nodal line semimetal Fe3GeTe2 is reported that covers UV-vis-infrared-terahertz bands (355 nm to 3000 µm), promising to compensate for the inadequacies of traditional optoelectronic devices. The significant suppression of photoexcitation conductivity is revealed to arise from the semimetal/oxidation (sMO) interface-assisted dual-response mechanism, in which the electron excitation origins from the semiconductor photoconductivity effect in high-energy photon region, and semimetal topological band-transition in low-energy photon region. High responsivities ranging from 103 to 100 mA W-1 are acquired within ultraviolet-terahertz bands under ±0.1 V bias voltage at room temperature. Notably, the responsivity of 2.572 A W-1 at 3000 µm (0.1 THz) and the low noise equivalent power of 26 pW Hz-1/2 surpass most state-of-the-art mainstream terahertz detectors. This research provides a new perspective for revealing the photoelectric conversion properties of Fe3GeTe2 crystal and paves the way for the development of spin-optoelectronic devices.

Overcoming the Unfavorable Effects of "Boltzmann Tyranny:" Ultra-Low Subthreshold Swing in Organic Phototransistors via One-Transistor-One-Memristor Architecture

Organic phototransistors (OPTs), as photosensitive organic field-effect transistors (OFETs), have gained significant attention due to their pivotal roles in imaging, optical communication, and night vision. However, their performance is fundamentally limited by the Boltzmann distribution of charge carriers, which constrains the average subthreshold swing (SSave ) to a minimum of 60 mV/decade at room temperature. In this study, an innovative one-transistor-one-memristor (1T1R) architecture is proposed to overcome the Boltzmann limit in conventional OFETs. By replacing the source electrode in an OFET with a memristor, the 1T1R device exploits the memristor's sharp resistance state transitions to achieve an ultra-low SSave of 18 mV/decade. Consequently, the 1T1R devices demonstrate remarkable sensitivity to photo illumination, with a high specific detectivity of 3.9 × 109  cm W-1 Hz1/2 , outperforming conventional OPTs (4.9 × 104  cm W-1 Hz1/2 ) by more than four orders of magnitude. The 1T1R architecture presents a potentially universal solution for overcoming the detrimental effects of "Boltzmann tyranny," setting the stage for the development of ultra-low SSave devices in various optoelectronic applications.

Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials

Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Mid-Infrared Bipolar and Unipolar Linear Polarization Detections in Nb2 GeTe4 /MoS2 Heterostructures

Detecting and distinguishing light polarization states, one of the most basic elements of optical fields, have significant importance in both scientific studies and industry applications. Artificially fabricated structures, e.g., metasurfaces with anisotropic absorptions, have shown the capabilities of detecting polarization light and controlling. However, their operations mainly rely on resonant absorptions based on structural designs that are usually narrow bands. Here, a mid-infrared (MIR) broadband polarization photodetector with high PRs and wavelength-dependent polarities using a 2D anisotropic/isotropic Nb2 GeTe4 /MoS2 van der Waals (vdWs) heterostructure is demonstrated. It is shown that the photodetector exhibits high PRs of 48 and 34 at 4.6  and 11.0 µm wavelengths, respectively, and even a negative PR of -3.38 for 3.7 µm under the zero bias condition at room temperature. Such interesting results can be attributed to the superimposed effects of a photovoltaic (PV) mechanism in the Nb2 GeTe4 /MoS2 hetero-junction region and a bolometric mechanism in the MoS2 layer. Furthermore, the photodetector demonstrates its effectiveness in bipolar and unipolar polarization encoding communications and polarization imaging enabled by its unique and high PRs.

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

A polar-switchable and controllable negative phototransistor for information encryption

Anomalous negative phototransistors have emerged as a distinct research area, characterized by a decrease in channel current under light illumination. Recently, their potential applications have been expanded beyond photodetection. Despite the considerable attention given to negative phototransistors, negative photoconductance (NPC) in particular remains relatively unexplored, with limited research advancements as compared to well-established positive phototransistors. In this study, we designed ferroelectric field-effect transistors (FeFETs) based on the WSe2/CIPS van der Waals (vdW) vertical heterostructures with a buried-gated architecture. The transistor exhibits NPC and positive photoconductance (PPC), demonstrating the significant role of ferroelectric polarization in the distinctive photoresponse. The observed inverse photoconductance can be attributed to the dynamic switching of ferroelectric polarization and interfacial charge transfer processes, which have been investigated experimentally and theoretically using Density Functional Theory (DFT). The unique phenomena enable the coexistence of controllable and polarity-switchable PPC and NPC. The novel feature holds tremendous potential for applications in optical encryption, where the specific gate voltages and light can serve as universal keys to achieve modulation of conductivity. The ability to manipulate conductivity in response to optical stimuli opens up new avenues for developing secure communication systems and data storage technologies. Harnessing this feature enables the design of advanced encryption schemes that rely on the unique properties of our material system. The study not only advances the development of NPC but also paves the way for more robust and efficient methods of optical encryption, ensuring the confidentiality and integrity of critical information in various domains, including data transmission, and information security.

High photoresponsivity MoS2phototransistor through enhanced hole trapping HfO2gate dielectric

Phototransistor using 2D semiconductor as the channel material has shown promising potential for high sensitivity photo detection. The high photoresponsivity is often attributed to the photogating effect, where photo excited holes are trapped at the gate dielectric interface that provides additional gate electric field to enhance channel charge carrier density. Gate dielectric material and its deposition processing conditions can have great effect on the interface states. Here, we use HfO2gate dielectric with proper thermal annealing to demonstrate a high photoresponsivity MoS2phototransistor. When HfO2is annealed in H2atmosphere, the photoresponsivity is enhanced by an order of magnitude as compared with that of a phototransistor using HfO2without annealing or annealed in Ar atmosphere. The enhancement is attributed to the hole trapping states introduced at HfO2interface through H2annealing process, which greatly enhances photogating effect. The phototransistor exhibits a very large photoresponsivity of 1.1 × 107A W-1and photogain of 3.3 × 107under low light illumination intensity. This study provides a processing technique to fabricate highly sensitive phototransistor for low optical power detection.

CMOS-Compatible Tellurium/Silicon Ultra-Fast Near-Infrared Photodetector

High-quality photodetectors are always the main way to obtain external information, especially near-infrared sensors play an important role in remote sensing communication. However, due to the limitation of Silicon (Si) wide bandgap and the incompatibility of most near infrared photoelectric materials with traditional integrated circuits, the development of high performance and wide detection spectrum near infrared detectors suitable for miniaturization and integration is still facing many obstacles. Herein, the monolithic integration of large area tellurium optoelectronic functional units is realized by magnetron sputtering technology. Taking advantage of the type II heterojunction constructed by tellurium (Te) and silicon (Si), the photogenerated carriers are effectively separated, which prolongs the carrier lifetime and improves the photoresponse by several orders of magnitude. The tellurium/silicon (Te/Si) heterojunction photodetector demonstrates excellent detectivity and ultra-fast turn-on time. Importantly, an imaging array (20 × 20 pixels) based on the Te/Si heterojunction is demonstrated and high-contrast photoelectric imaging is realized. Because of the high contrast obtained by the Te/Si array, in comparison with the Si arrays, it significantly improve the efficiency and accuracy of the subsequent processing tasks when the electronic pictures are applied to artificial neural network (ANN) to simulate the artificial vision system.

Recent Advances in the Preparation and Application of Two-Dimensional Nanomaterials

Two-dimensional nanomaterials (2D NMs), consisting of atoms or a near-atomic thickness with infinite transverse dimensions, possess unique structures, excellent physical properties, and tunable surface chemistry. They exhibit significant potential for development in the fields of sensing, renewable energy, and catalysis. This paper presents a comprehensive overview of the latest research findings on the preparation and application of 2D NMs. First, the article introduces the common synthesis methods of 2D NMs from both "top-down" and "bottom-up" perspectives, including mechanical exfoliation, ultrasonic-assisted liquid-phase exfoliation, ion intercalation, chemical vapor deposition, and hydrothermal techniques. In terms of the applications of 2D NMs, this study focuses on their potential in gas sensing, lithium-ion batteries, photodetection, electromagnetic wave absorption, photocatalysis, and electrocatalysis. Additionally, based on existing research, the article looks forward to the future development trends and possible challenges of 2D NMs. The significance of this work lies in its systematic summary of the recent advancements in the preparation methods and applications of 2D NMs.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

Combining negative photoconductivity and resistive switching towards in-memory logic operations

A family of rudorffites based on silver-bismuth-iodide shows a transition from a conventional positive photoconductivity (PPC) to an unusual negative photoconductivity (NPC) upon variation in the precursor stoichiometry while forming the rudorffites. The NPC has arisen in silver-rich rudorffites due to the generation of illumination-induced trap-states which prompted the recombination of charge carriers and thereby a decrease in the conductivity of the compounds. In addition to photoconductivity, sandwiched devices based on all the rudorffites exhibited resistive switching between a pristine high resistive state (HRS) and a low resistive state (LRS) under a suitable voltage pulse; the switching process, which is reversible, is associated with a memory phenomenon. The devices based on NPC-exhibiting rudorffites switched to the HRS under illumination as well. That is, the resistive state of the devices could be controlled through both electrical and optical inputs. We employed such interesting optoelectronic properties of NPC-exhibiting rudorffites to exhibit OR logic gate operation. Because the devices could function as a logic gate and store the resistive state as well, we concluded that the materials could be an ideal candidate for in-memory logic operations.

Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS2 Transistors for Active Control of Extendable Logic

Field-effect transistor (FET) devices with multi-gate coupled structures usually exhibit special electrical properties and are suitable for fabricating multifunctional devices. Among them, the 1D nanowire gate configuration has become a promising gate design to tailor 2D FET performances. However, due to possible short circuiting induced by nanowire contact and the high requirement for precision manipulation, the integration of multi-nanowires as gates in a single 2D electronic system remains a grand challenge. Herein, local laser--thinned multiple core-shell SiC@SiO₂ nanowires are successfully integrated into MoS₂ transistors as multi-gates for active control of extendable logic applications. Nanowire gates (NGs) locally enhance the carrier transportation, and the use of multiple NGs can achieve designed band structures to tune the performance of the device. For core-shell structures, a semiconducting core is used to introduce a gate bias, and the insulating shell provides protection against short circuiting between NGs, facilitating nanowire assembly. Furthermore, a global control gate is introduced to co-tune the overall electrical characteristics, while active control of logic devices and extendable inputs are achieved based on this model. This work proposes a novel nanowire multi-gate configuration, which provides possibilities for localized, precise control of band structures and the fabrication of highly integrated, multifunctional, and controllable nano-devices.

Investigating active area dependent high performing photoresponse through thin films of Weyl Semimetal WTe2

WTe₂ is one of the wonder layered materials, displays interesting overlapping of electron-hole pairs, opening of the surface bandgap, anisotropy in its crystal structure and very much sought appealing material for room temperature broadband photodection applications. Here we report the photoresponse of WTe₂ thin films and microchannel devices fabricated on silicon nitride substrates. A clear sharp rise in photocurrent observed under the illumination of visible (532 nm) and NIR wavelengths (1064 nm). The observed phoresponse is very convincing and repetitive for ON /OFF cycles of laser light illumination. The channel length dependence of photocurrent is noticed for few hundred nanometers to micrometers. The photocurrent, rise & decay times, responsivity and detectivity are studied using different channel lengths. Strikingly microchannel gives few orders of greater responsivity compared to larger active area investigated here. The responsivity and detectivity are observed as large as 29 A/W and 3.6 × 10⁸ Jones respectively. The high performing photodetection properties indicate that WTe₂ can be used as a broad band material for future optoelectronic applications.

Ultrafast response of spontaneous photovoltaic effect in 3R-MoS2-based heterostructures

Rhombohedrally stacked MoS₂ has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show that the photovoltaic effect has an external quantum efficiency of 10% for devices with only two atomic layers of MoS₂ at low temperatures, and identify a picosecond-fast photocurrent response, which translates to an intrinsic device bandwidth at ∼100-GHz level. To this end, we have developed a nondegenerate pump-probe photocurrent spectroscopy technique to deconvolute the thermal and charge-transfer processes, thus successfully revealing the multicomponent nature of the photocurrent dynamics. The fast component approaches the limit of the charge-transfer speed at the graphene-MoS₂ interface. The remarkable efficiency and ultrafast photoresponse in the graphene-3R-MoS₂ devices support the use of ferroelectric van der Waals materials for future high-performance optoelectronic applications.

Defect-Induced Ultrafast Nonadiabatic Electron-Hole Recombination Process in PtSe2 Monolayer

Defects are inevitable in two-dimensional materials due to the growth condition, which results in many unexpected changes in materials' properties. Here, we have mainly discussed the nonradiative recombination dynamics of PtSe₂ monolayer without/with native point defects. Based on first-principles calculations, a shallow p-type defect state is introduced by a Se antisite, and three n-type defect states with a double-degenerate shallow defect state and a deep defect state are introduced by a Se vacancy. Significantly, these defect states couple strongly to the pristine valence band maximum and lead to the enhancement of the in-plane vibrational E_g mode. Both factors appreciably increase the nonadiabatic coupling, accelerating the electron-hole recombination process. An explanation of PtSe₂-based photodetectors with the slow response, compared to conventional devices, is provided by studying this nonradiative transitions process.

Direct observation of photoinduced carrier blocking in mixed-dimensional 2D/3D perovskites and the origin

Mixed-dimensional 2D/3D halide perovskite solar cells promise high stability but practically deliver poor power conversion efficiency, and the 2D HP component has been held as the culprit because its intrinsic downsides (ill charge conductivity, wider bandgap, and strong exciton binding) were intuitively deemed to hinder carrier transport. Herein, we show that the 2D HP fragments, in fact, allow free migration of carriers in darkness but only block the carrier transport under illumination. While surely limiting the photovoltaic performance, such photoinduced carrier blocking effect is unexplainable by the traditional understanding above but is found to stem from the trap-filling-enhanced built-in potential of the 2D/3D HP interface. By parsing the depth-profile nanoscopic phase arrangement of the mixed-dimensional 2D/3D HP film for solar cells and revealing a photoinduced potential barrier up to several hundred meV, we further elucidate how the photoinduced carrier blocking mechanism jeopardizes the short-circuit current and fill factor.

Mixed dimensional 2D/3D halide perovskite solar cells practically deliver poorer efficiency, and the 2D fragments have been considered responsible. Here, the authors unveil a photoinduced carrier blocking effect at the 2D/3D perovskite interface that could truly jeopardize device parameters.

SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse

High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW-1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.

Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition

Neuromorphic visual systems emulating biological retina functionalities have enormous potential for in-sensor computing, with prospects of making artificial intelligence ubiquitous. Conventionally, visual information is captured by an image sensor, stored by memory units, and eventually processed by the machine learning algorithm. Here, we present an optoelectronic synapse device with multifunctional integration of all the processes required for real time object identification. Ultraviolet-visible wavelength-sensitive MoS₂ FET channel with infrared sensitive PtTe₂/Si gate electrode enables the device to sense, store, and process optical data for a wide range of the electromagnetic spectrum, while maintaining a low dark current. The device exhibits optical stimulation-controlled short-term and long-term potentiation, electrically driven long-term depression, synaptic weight update for multiple wavelengths of light ranging from 300 nm in ultraviolet to 2 μm in infrared. An artificial neural network developed using the extracted weight update parameters of the device can be trained to identify both single wavelength and mixed wavelength patterns. This work demonstrates a device that could potentially be used for realizing a multiwavelength neuromorphic visual system for pattern recognition and object identification.

Ultrafast and Polarization-Sensitive ReS2/ReSe2 Heterostructure Photodetectors with Ambipolar Photoresponse

Recently, two-dimensional (2D) van der Waals (vdWs) heterostructures provided excellent and fascinating platforms for advanced engineering in high-performance optoelectronic devices. Herein, novel ReS2/ReSe2 heterojunction phototransistors are constructed and explored systematically that display high responsivity, wavelength-dependent ambipolar photoresponse (negative and positive), ultrafast and polarization-sensitive detection capability. This photodetector exhibits a positive photoresponse from UV to visible spectrum (760 nm) with high photoresponsivities about 126.56 and 16.24 A/W under 350 and 638 nm light illumination, respectively, with a negative photoresponse over 760 nm, which is mainly ascribed to the ambipolar photoresponse modulated by gate voltage. In addition, profound linear polarization sensitivity is demonstrated with a dichroic ratio of about ∼1.2 at 638 nm and up to ∼2.0 at 980 nm, primarily owing to the wavelength-dependent absorption anisotropy and the stagger alignment of the crystal. Beyond static photodetection, the dynamic photoresponse of this vdWs device presents an ultrafast and repeatable photoswitching performance with a cutoff frequency (f3dB) exceeding 100 kHz. Overall, this study reveals the great potential of 2D ReX2-based vdWs heterostructures for high-performance, ultrafast, and polarization-sensitive broadband photodetectors.

Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.

Twisted Light-Induced Photocurrent in a Silicon Nanowire Field-Effect Transistor

Light can possess orbital angular momentum (OAM), in addition to spin angular momentum (SAM), which offers nearly infinite possible values of momentum states, allowing a wider degree of freedom for information processing and communications. The OAM of light induces a selection rule that obeys the law of conservation of angular momentum as it interacts with a material, affecting the material's optical and electrical properties. In this work, silicon nanowire field-effect transistors are subjected to light with OAM, also known as twisted light. Electrical measurements on the devices consequently reveal photocurrent enhancements after incrementing the OAM of the incident light from 0ℏ (fundamental mode) to 5ℏ. Such a phenomenon is attributed to the enhancements of the photogating and the photoconductive effects under the influence of the OAM of light, the underlying mechanism of which is proposed and discussed using energy band diagrams. With these observations, a strategy for controlling photocurrent has been introduced, which can be a realization of the application in the field of optoelectronics technology.

Negative Phototransistors with Ultrahigh Sensitivity and Weak-Light Detection Based on 1D/2D Molecular Crystal p-n Heterojunctions and their Application in Light Encoders

Anomalous negative phototransistors in which the channel current decreases under light illumination hold potential to generate novel and multifunctional optoelectronic applications. Although a variety of design strategies have been developed to construct such devices, NPTs still suffer from far lower device performance compared to well-developed positive phototransistors (PPTs). In this work, a novel 1D/2D molecular crystal p-n heterojunction, in which p-type 1D molecular crystal (1DMC) arrays are embedded into n-type 2D molecular crystals (2DMCs), is developed to produce ultrasensitive NPTs. The p-type 1DMC arrays act as light-absorbing layers to induce p-doping of n-type 2DMCs through charge transfer under illumination, resulting in ineffective gate control and significant negative photoresponses. As a result, the NPTs show remarkable performances in photoresponsivity (P) (1.9 × 10⁸ ) and detectivity (D*) (1.7 × 10¹⁷ Jones), greatly outperforming previously reported NPTs, which are one of the highest values among all organic phototransistors. Moreover, the device exhibits intriguing characteristics undiscovered in PPTs, including precise control of the threshold voltage by controlling light signals and ultrasensitive detection of weak light. As a proof-of-concept, the NTPs are demonstrated as light encoders that can encrypt electrical signals by light. These findings represent a milestone for negative phototransistors, and pave the way for the development of future novel optoelectronic applications.

Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe₂) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe₂-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 μm indicates the suitability of PtSe₂ for PDs far into the IR wavelength range. Our PtSe₂ PDs integrated by direct growth outperform PtSe₂ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe₂ an attractive 2D material for optoelectronics and PICs.

A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

Monolayer MoS₂ exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors and light emitting diodes. For image sensing applications, improving the light sensitivity relies on achieving a low dark current that enables the detection weak light signals. Although previous reports on improving the detectivity have been explored with heterostructures and pn junction devices, some of these approaches lack CMOS compatibility processing and sufficient low dark current suppression. Steep slope transistors that overcome the Boltzmann tyranny can further enhance the performance in photodetectors by providing efficient extraction of photogenerated charges. Here, we report a monolayer MoS₂ floating gate negative capacitance phototransistor with the integration of a hafnium-zirconium oxide ferroelectric capacitor. In this study, a SS_min of 30 mV dec^-1, very low dark currents of 10^-13-10^-14 A, and a high detectivity of 7.2 × 10¹⁵ cm Hz^1/2 W^-1 were achieved under weak light illumination due to an enhancement in the photogating effect. In addition, its potential as an optical memory and as an optical synapse with excellent long-term potentiation characteristics in an artificial neural network was also explored. Overall, this device structure offers high photosensitivity to weak light signals for future low-powered optoelectronic applications.

Layer-by-Layer Growth of AA-Stacking MoS2 for Tunable Broadband Phototransistors

The stacking configuration has been considered as an important additional degree of freedom to tune the physical property of layered materials, such as superconductivity and interlayer excitons. However, the facile growth of highly uniform stacking configuration is still a challenge. Herein, the AA-stacking MoS₂ domains with a ratio up to 99.5% has been grown by using the modified chemical vapor deposition through introducing NaCl molecules in the confined space. By tuning the growth time, MoS₂ domains would transit from an AA-stacking bilayer to an AAAAA-stacking five-layer. The epitaxial growth mechanism has been insightfully studied, revealing that the critical nucleation size of the AA-stacking bilayer is 5.0 ± 3.0 μm. Through investigation of the photoluminescence, the photoemission, especially the indirect photoexcitation, is dependent on both the stacking fashion and layer number. Furthermore, by studying the gate-tuned MoS₂ phototransistors, we found a significant dependence on the stacking configuration of MoS₂ of the photoexcitation and a different gate tunable photoresponse. The AAA-stacking trilayer MoS₂ phototransistor delivers a photoresponse of 978.14 A W^-1 at 550 nm. By correction of the external quantum efficiency with external field and illumination power density, it has been found that the photoresponse tunability is dependent on the layer number due to the strong photogating effect. This strategy provides a general avenue for the epitaxial growth of van der Waals film which will further facilitate the applications in a tunable photodetector.

Monolayer MoS2photodetectors with a buried-gate field-effect transistor structure

Unlike zero-bandgap graphene, molybdenum disulfide (MoS₂) has an adjustable bandgap and high light absorption rate, hence photodetectors based on MoS₂have attracted tremendous research attention. Most of the reported MoS₂photodetectors adopted back-gate field-effect transistor (FET) structure due to its easy fabrication and modulation features. However, the back-gate FET structure requires very high gate voltage up to 100 V, and it is impossible to modulate each device in an array with this structure independently. This work demonstrated a monolayer MoS₂photodetector based on a buried-gate FET structure whose experimental results showed that both the electrical and photoelectrical properties could be well modulated by a gate voltage as low as 3 V. A photoresponsivity above 1 A W^-1was obtained under a 395 nm light-emitting diode light illumination, which is over 2 orders of magnitude higher than that of a reported back-gate photodetector based on monolayer MoS₂(7.5 mA W^-1). The photoresponsivity can be further improved by increasing the buried gate voltage and source-drain voltage. These results are of significance for the practical applications of MoS₂photodetectors, especially in the low voltage and energy-saving areas.

Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors

Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.

Suspended MoS2 Photodetector Using Patterned Sapphire Substrate

The introduction of patterned sapphire substrates (PSS) has been regarded as an effective method to improve the photoelectric performance of 2D layered materials in recent years. Molybdenum disulfide (MoS₂ ), an intriguing transition metal 2D materials with splendid photoresponse owing to a direct-indirect bandgap transition at monolayer, shows promising optoelectronics applications. Here, a large-scale, continuous multilayer MoS₂ film is prepared on a SiO₂ /Si substrate and transferred to flat sapphire substrate and PSS, respectively. An enhanced dynamic distribution of local electric field and concentrated photon excitons across the interface between MoS₂ and patterned sapphire substrates are revealed by the finite-difference time-domain simulation. The photoelectric performance of the MoS₂ /PSS photodetector is improved under the three lasers of 365, 460, and 660 nm. Under the 365 nm laser, the photocurrent increased by 3 times, noise equivalent power (NEP) decreases to 1.77 × 10^-14 W/Hz^1/2 and specific detectivity (D*) increases to 1.2 × 10¹⁰ Jones. Meanwhile, the responsivity is increased by 7 times at 460 nm, and the response time of the MoS₂ /PSS photodetector is also shortened under three wavelengths. The work demonstrates an effective method for enhancing the optical properties of photodetectors and enabling simultaneous detection of broad-spectrum emissions.

Simple Self-Assembly Strategy of Nanospheres on 3D Substrate and Its Application for Enhanced Textured Silicon Solar Cell

Nanomaterials and nanostructures provide new opportunities to achieve high-performance optical and optoelectronic devices. Three-dimensional (3D) surfaces commonly exist in those devices (such as light-trapping structures or intrinsic grains), and here, we propose requests for nanoscale control over nanostructures on 3D substrates. In this paper, a simple self-assembly strategy of nanospheres for 3D substrates is demonstrated, featuring controllable density (from sparse to close-packed) and controllable layer (from a monolayer to multi-layers). Taking the assembly of wavelength-scale SiO₂ nanospheres as an example, it has been found that textured 3D substrate promotes close-packed SiO₂ spheres compared to the planar substrate. Distribution density and layers of SiO₂ coating can be well controlled by tuning the assembly time and repeating the assembly process. With such a versatile strategy, the enhancement effects of SiO₂ coating on textured silicon solar cells were systematically examined by varying assembly conditions. It was found that the close-packed SiO₂ monolayer yielded a maximum relative efficiency enhancement of 9.35%. Combining simulation and macro/micro optical measurements, we attributed the enhancement to the nanosphere-induced concentration and anti-reflection of incident light. The proposed self-assembly strategy provides a facile and cost-effective approach for engineering nanomaterials at 3D interfaces.

MoS2 and CdMoS4 nanostructure-based UV light photodetectors

We have developed MoS2 nanosheets and CdMoS4 hierarchical nanostructures based on a UV light photodetector. The surface morphologies of the as-prepared samples were investigated via field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The performance parameters for the present photodetectors are investigated under the illumination of UV light having a wavelength of ∼385 nm. Upon the illumination of UV light, the CdMoS4-based photodetector device showed a better response to UV light compared to the MoS2 device in terms of photoresponsivity, response time (∼72 s) and recovery time (∼94 s). Our results reveal that CdMoS4 hierarchical nanostructures are practical for enhancing the device performance.

Flexible Light-to-Frequency Conversion Circuits Built with Si-Based Frequency-to-Digital Converters via Complementary Photosensitive Ring Oscillators with p-Type SWNT and n-Type a-IGZO Thin Film Transistors

In this study, as system-level photodetectors, light-to-frequency conversion circuits (LFCs) are realized by i) photosensitive ring oscillators (ROs) composed of amorphous indium-gallium-zinc-oxide/single-walled carbon nanotube (a-IGZO/SWNT) thin film transistors (TFTs) and ii) phase-locked-loop Si circuits built with frequency-to-digital converters (PFDC). The 3-stage ROs and logic gates based on a-IGZO/SWNT TFTs successfully demonstrate its performance on flexible substrates. Herein, along with the advantage of scalability, a-IGZO films are used as photosensitive n-type TFTs and SWNTs are employed as photo-insensitive p-type TFTs for better photosensitivity in circuit level. Through the controlling a post-annealing condition of a-IGZO film, responsivities and detectivities of a-IGZO TFTs are obtained as 36 AW^-1 and 0.3 × 10¹² Jones for red, 93 AW^-1 and 3.1 × 10¹² Jones for green, and 194 AW^-1 and 11.7 × 10¹² Jones for blue. Furthermore, as an advanced demonstration for practical application of LFCs, a unique circuit (i.e., PFDC) is designed to analyze the generated oscillation frequency (f_osc ) from the LFC device and convert it to a digital code. As a result, the designed PFDC can exactly count the generated f_osc from the flexible a-IGZO/SWNT ROs under light illumination with an outstanding sensitivity and assign input frequencies to respective digital code.

CsPbX3 -ITO (X = Cl, Br, I) Nano-Heterojunctions: Voltage Tuned Positive to Negative Photoresponse

All-Inorganic perovskite CsPbX₃ (X = Cl, Br, I) quantum dots (QDs) have attracted tremendous attention in the past few years for their appealing performance in optoelectronic applications. Major properties of CsPbX₃ QDs include the positive photoconductivity (PPC) and the defect tolerance of the in-band trap states. Here it is reported that when hybridizing CsPbX₃ QDs with indium tin oxide (ITO) nanocrystals to form CsPbX₃ -ITO nano-heterojunctions (NHJs), a voltage tuned photoresponse-from PPC to negative photoconductivity (NPC) transform-is achieved in lateral drain-source structured ITO/CsPbX₃ -ITO-NHJs/ITO devices. A model combining exciton, charge separation, transport, and most critical the voltage driven electron filling of the in-band trap states with drain-source voltage (V_DS ) above a threshold, is proposed to understand this unusual PPC-NPC transform mechanism, which is different from that of any known nanomaterial system. This finding exhibits potentials for developing devices such as photodetectors, optoelectronic switches, and memories.

Multiple-Dimensionally Controllable Nucleation Sites of Two-Dimensional WS2/Bi2Se3 Heterojunctions Based on Vapor Growth

Two-dimensional (2D) heterojunctions have attracted great attention due to their excellent optoelectronic properties. Until now, precisely controlling the nucleation density and stacking area of 2D heterojunctions has been of critical importance but still a huge challenge. It hampers the progress of controlled growth of 2D heterojunctions for optoelectronic devices because the potential relation between numerous growth parameters and nucleation density is always poorly understood. Herein, by cooperatively controlling three parameters (substrate temperature, gas flow rate, and precursor concentration) in modified vapor deposition growth, the nucleation density and stacking area of WS₂/Bi₂Se₃ vertical heterojunctions were successfully modulated. High-quality WS₂/Bi₂Se₃ vertical heterojunctions with various stacking areas were effectively grown from single and multiple nucleation sites. Moreover, the potential nucleation mechanism and efficient charge transfer of WS₂/Bi₂Se₃ vertical heterojunctions were systematically studied by utilizing the density functional theory and photoluminescence spectra. This modified vapor deposition strategy and the proposed mechanism are helpful in controlling the nucleation density and stacking area of other heterojunctions, which plays a key role in the preparation of electronic and optoelectronic nanodevices.

High-Performance MoS2 Photodetectors Prepared Using a Patterned Gallium Nitride Substrate

Strain-adjusting the band gap of MoS₂ using patterned substrates to improve the photoelectric performance of MoS₂ has gradually become a research hotspot in recent years. However, there are still difficulties in obtaining high-quality two-dimensional materials and preparing photodetectors on patterned substrates. To overcome this, a continuous multilayer MoS₂ film was transferred to a patterned gallium nitride substrate (PGS) for the fabrication of photodetectors, and density functional theory calculations showed that the band gap of the MoS₂ film increased and that the electron effective mass decreased due to the introduction of PGS. In addition, finite difference time domain simulation showed that the electric field in the MoS₂ area on the PGS is enhanced compared with that on the flat gallium nitride substrate due to the enhanced light scattering effect of the PGS. The photoresponse of the MoS₂/PGS photodetector at 460 nm was also enhanced, with I_ph increasing by 5 times, R increasing by 2 times, NEP decreasing to 3.88 × 10^-13 W/Hz^1/2, and D* increasing to 5.6 × 10⁸ Jones. Our research has important guiding significance in adjusting the band gap of MoS₂ and enhancing the photoelectric performance of MoS₂ photodetectors.

Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves

2D materials are considered to be the most promising materials for photodetectors due to their unique optical and electrical properties. Since the discovery of graphene, many photodetectors based on 2D materials have been reported. However, the low quantum efficiency, large noise, and slow response caused by the thinness of 2D materials limit their application in photodetectors. Here, recent progress on 2D material photodetectors is reviewed, covering the spectrum from ultraviolet to terahertz waves. First the interaction of 2D materials with light is analyzed in terms of optical physics. Then the present methods to improve the performance of 2D material photodetectors are summarized, such as defect engineering, p-n junctions and hybrid detectors, and the issue of serious overestimation of the performance in reported photodetectors based on 2D materials is discussed. Next, a comparison of 2D material photodetectors with traditional commercially available detectors shows that it is difficult to balance the current 2D material photodetectors with regard to having simultaneously both high sensitivity and fast response. Finally, a possible novel EIW mechanism is suggested to advance the performance of 2D material photodetectors in the future.

Fully Light-Controlled Memory and Neuromorphic Computation in Layered Black Phosphorus

Imprinting vision as memory is a core attribute of human cognitive learning. Fundamental to artificial intelligence systems are bioinspired neuromorphic vision components for the visible and invisible segments of the electromagnetic spectrum. Realization of a single imaging unit with a combination of in-built memory and signal processing capability is imperative to deploy efficient brain-like vision systems. However, the lack of a platform that can be fully controlled by light without the need to apply alternating polarity electric signals has hampered this technological advance. Here, a neuromorphic imaging element based on a fully light-modulated 2D semiconductor in a simple reconfigurable phototransistor structure is presented. This standalone device exhibits inherent characteristics that enable neuromorphic image pre-processing and recognition. Fundamentally, the unique photoresponse induced by oxidation-related defects in 2D black phosphorus (BP) is exploited to achieve visual memory, wavelength-selective multibit programming, and erasing functions, which allow in-pixel image pre-processing. Furthermore, all-optically driven neuromorphic computation is demonstrated by machine learning to classify numbers and recognize images with an accuracy of over 90%. The devices provide a promising approach toward neurorobotics, human-machine interaction technologies, and scalable bionic systems with visual data storage/buffering and processing.

Positive and negative photoconductivity characteristics in CsPbBr3/graphene heterojunction

Broadband response photodetectors have received great research interest in optical sensing field. Usually, materials with positive photoconductivity (PPC) are general and the lack of negative photoconductivity (NPC) materials limits the application of photoelectric effect, especially in the broadband photodetecting field. Therefore, the finding of NPC materials is very important. Integrating PPC and NPC response into a single device is extremely meaningful to the development of broadband photodetector. In this work, we fabricated CsPbBr₃ nanocrystals (NCs)-multilayered graphene heterojunction, which achieved persistent NPC response to ultra violet (300-390 nm) and PPC response to visible light (420-510 nm). The persistent NPC relies on the desorption of H₂O vapor, and varies its intensity with the power intensity of laser. The PPC relies on the holes transmission from NCs to graphene. The recombination of NPC and PPC effect provides background knowledge for the development of broadband photodetector.

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS2 for Optical Enhancement in the Near UV

The hybrid structure of zero-dimensional (0D) graphene quantum dots (GQDs) and semiconducting two-dimensional (2D) MoS₂ has been investigated, which exhibit outstanding properties for optoelectronic devices surpassing the limitations of MoS₂ photodetectors where the GQDs extend the optical absorption into the near-UV regime. The GQDs and MoS₂ films are characterized by Raman and photoluminescence (PL) spectroscopies, along with atomic force microscopy. After outlining the fabrication of our 0D-2D heterostructure photodetectors comprising GQDs with bulk MoS₂ sheets, their photoresponse to the incoming radiation was measured. The hybrid GQD/MoS₂ heterostructure photodetector exhibits a high photoresponsivity R of more than 1200 A W^-1 at 0.64 mW/cm² at room temperature T. The T-dependent optoelectronic measurements revealed a peak R of ∼544 A W^-1 at 245 K, examined from 5.4 K up to 305 K with an incoming white light power density of 3.2 mW/cm². A tunable laser revealed the photocurrent to be maximal at lower wavelengths in the near ultraviolet (UV) over the 400-1100 nm spectral range, where the R of the hybrid GQDs/MoS₂ was ∼775 A W^-1, while a value of 2.33 × 10¹² Jones was computed for the detectivity D* at 400 nm. The external quantum efficiency was measured to be ∼99.8% at 650 nm, which increased to 241% when the wavelength of the incoming laser was reduced to 400 nm. Time-resolved measurements of the photocurrent for the hybrid devices resulted in a rise time τ_rise and a fall time τ_fall of ∼7 and ∼25 ms, respectively, at room T, which are 10× lower compared to previous reports. From our promising results, we conclude that the GQDs exhibit a sizable band gap upon optical excitation, where photocarriers are injected into the MoS₂ films, endowing the hybrids with long carrier lifetimes to enable efficient light absorption beyond the visible and into the near-UV regime. The GQD-MoS₂ structure is thus an enabling platform for high-performance photodetectors, optoelectronic circuits, and quantum devices.

High performance IGZO-based phototransistors by BN/BP interface engineering

Some advances have been achieved in developing heterojunctions consisting of indium-gallium-zinc oxide (a-IGZO) films and two dimensional (2D) van der Waals materials for optoelectronic applications in recent years, however, the improvement of IGZO channel itself via constructing such heterojunctions is rarely reported. Here, we report the huge improvement in photoresponse performances for the IGZO phototransistor devices by introducing boron nitride (BN)/black phosphorus (BP) interface engineering. By creating an appropriate band bending and an efficient photo-generated carrier transfer path between IGZO and BP, the recombination of the photo-generated carriers in the IGZO channel is significantly suppressed. As a result, the corresponding photoresponsivity at a wavelength of 447 nm can be promoted from 0.05 A W^-1 to 0.3 A W^-1. A corresponding maximum external quantum efficiency of 83.4% was obtained for the BN/BP decorated IGZO phototransistor. The results imply that such interface engineering via 2D materials can be used as a general route to high performance oxide-semiconductor based optoelectronic devices.

Highly efficient and controllable photoluminescence emission on a suspended MoS2-based plasmonic grating

Being a new class of materials, transition metal dichalcogenides are paving the way for applications in atomically thin optoelectronics. However, the intrinsically weak light-matter interaction and the lack of manipulation ability has lead to poor light emission and tunable behavior. Here, we investigate the fluorescence characteristic of monolayer molybdenum disulfide on a metal narrow-slit grating, where a highly efficient, 471 times photoluminescence enhancement are realized, based on the hybrid surface plasmon polaritons resonances and the decreased influence of substrate. Moreover, the emitted intensity and polarization are controllable due to the polarization-dependent characteristic and anisotropy of grating. The manipulations of light-matter interactions in this special system provide a new insight into the fluorescent emission process and open a new avenue for high-performance low dimensional materials devices designs.

Low-Power and Ultra-Thin MoS2 Photodetectors on Glass

Integration of low-power consumer electronics on glass can revolutionize the automotive and transport sectors, packaging industry, smart building and interior design, healthcare, life science engineering, display technologies, and many other applications. However, direct growth of high-performance, scalable, and reliable electronic materials on glass is difficult owing to low thermal budget. Similarly, development of energy-efficient electronic and optoelectronic devices on glass requires manufacturing innovations. Here, we accomplish both by relatively low-temperature (<600 °C) metal-organic chemical vapor deposition growth of atomically thin MoS₂ on multicomponent glass and fabrication of low-power phototransistors using atomic layer deposition (ALD)-grown, high-k, and ultra-thin (∼20 nm) Al₂O₃ as the top-gate dielectric, circumventing the challenges associated with the ALD nucleation of oxides on inert basal planes of van der Waals materials. The MoS₂ photodetectors demonstrate the ability to detect low-intensity visible light at high speed and low energy expenditure of ∼100 pico Joules. Furthermore, low device-to-device performance variation across the entire 1 cm² substrate and aggressive channel length scalability confirm the technology readiness level of ultra-thin MoS₂ photodetectors on glass.