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Qing F, Guo X, Hou Y, Ning C, Wang Q, Li X. Toward the Production of Super Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310678. [PMID: 38708801 DOI: 10.1002/smll.202310678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 04/10/2024] [Indexed: 05/07/2024]
Abstract
The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.
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Affiliation(s)
- Fangzhu Qing
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
| | - Xiaomeng Guo
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yuting Hou
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Congcong Ning
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Qisong Wang
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xuesong Li
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
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2
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Zhang D, Yi P, Lai X, Peng L, Li H. Active machine learning model for the dynamic simulation and growth mechanisms of carbon on metal surface. Nat Commun 2024; 15:344. [PMID: 38184678 PMCID: PMC10771457 DOI: 10.1038/s41467-023-44525-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Accepted: 12/18/2023] [Indexed: 01/08/2024] Open
Abstract
Substrate-catalyzed growth offers a highly promising approach for the controlled synthesis of carbon nanostructures. However, the growth mechanisms on dynamic catalytic surfaces and the development of more general design strategies remain ongoing challenges. Here we show how an active machine-learning model effectively reveals the microscopic processes involved in substrate-catalyzed growth. Utilizing a synergistic approach of molecular dynamics and time-stamped force-biased Monte Carlo methods, augmented by the Gaussian Approximation Potential, we perform fully dynamic simulations of graphene growth on Cu(111). Our findings accurately replicate essential subprocesses-from the preferred diffusion of carbon monomer/dimer, chain or ring formations to edge-passivated Cu-aided graphene growth and bond breaks by ion impacts. Extending our simulations to carbon deposition on metal surfaces like Cu(111), Cr(110), Ti(001), and oxygen-contaminated Cu(111), our results align closely with experimental observations, providing a practical and efficient approach for designing metallic or alloy substrates to achieve desired carbon nanostructures and explore further reaction possibilities.
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Affiliation(s)
- Di Zhang
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China.
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan.
| | - Peiyun Yi
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China
- Shanghai Key Laboratory of Digital Manufacture for Thin-walled Structures, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China
| | - Xinmin Lai
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China
- Shanghai Key Laboratory of Digital Manufacture for Thin-walled Structures, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China
| | - Linfa Peng
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China.
- Shanghai Key Laboratory of Digital Manufacture for Thin-walled Structures, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China.
| | - Hao Li
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan.
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3
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Li J, Yuan Y, Lanza M, Abate I, Tian B, Zhang X. Nonepitaxial Wafer-Scale Single-Crystal 2D Materials on Insulators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2310921. [PMID: 38118051 DOI: 10.1002/adma.202310921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 12/01/2023] [Indexed: 12/22/2023]
Abstract
Next-generation nanodevices require 2D material synthesis on insulating substrates. However, growing high-quality 2D-layered materials, such as hexagonal boron nitride (hBN) and graphene, on insulators is challenging owing to the lack of suitable metal catalysts, imperfect lattice matching with substrates, and other factors. Therefore, developing a generally applicable approach for realizing high-quality 2D layers on insulators remains crucial, despite numerous strategies being explored. Herein, a universal strategy is introduced for the nonepitaxial synthesis of wafer-scale single-crystal 2D materials on arbitrary insulating substrates. The metal foil in a nonadhered metal-insulator substrate system is almost melted by a brief high-temperature treatment, thereby pressing the as-grown 2D layers to well attach onto the insulators. High-quality, large-area, single-crystal, monolayer hBN and graphene films are synthesized on various insulating substrates. This strategy provides new pathways for synthesizing various 2D materials on arbitrary insulators and offers a universal epitaxial platform for future single-crystal film production.
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Affiliation(s)
- Junzhu Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yue Yuan
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Iwnetim Abate
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Chemistry, University of California, Berkeley, CA, 97420, USA
- Department of Materials Science & Engineering, University of California, Berkeley, CA, 97420, USA
| | - Bo Tian
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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4
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Kim M, Joo SH, Wang M, Menabde SG, Luo D, Jin S, Kim H, Seong WK, Jang MS, Kwak SK, Lee SH, Ruoff RS. Direct Electrochemical Functionalization of Graphene Grown on Cu Including the Reaction Rate Dependence on the Cu Facet Type. ACS NANO 2023; 17:18914-18923. [PMID: 37781814 DOI: 10.1021/acsnano.3c04138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/03/2023]
Abstract
We present an electrochemical method to functionalize single-crystal graphene grown on copper foils with a (111) surface orientation by chemical vapor deposition (CVD). Graphene on Cu(111) is functionalized with 4-iodoaniline by applying a constant negative potential, and the degree of functionalization depends on the applied potential and reaction time. Our approach stands out from previous methods due to its transfer-free method, which enables more precise and efficient functionalization of single-crystal graphene. We report the suggested effects of the Cu substrate facet by comparing the reactivity of graphene on Cu(111) and Cu(115). The electrochemical reaction rate changes dramatically at the potential threshold for each facet. Kelvin probe force microscopy was used to measure the work function, and the difference in onset potentials of the electrochemical reaction on these two different facets are explained in terms of the difference in work function values. Density functional theory and Monte Carlo calculations were used to calculate the work function of graphene and the thermodynamic stability of the aniline functionalized graphene on these two facets. This study provides a deeper understanding of the electrochemical behavior of graphene (including single-crystal graphene) on Cu(111) and Cu(115). It also serves as a basis for further study of a broad range of reagents and thus functional groups and of the role of metal substrate beneath graphene.
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Affiliation(s)
- Minhyeok Kim
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department of Chemistry, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Se Hun Joo
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Meihui Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Sergey G Menabde
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyeongjun Kim
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Won Kyung Seong
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Min Seok Jang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Sang Kyu Kwak
- Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Sun Hwa Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department of Chemistry, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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5
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Hou Z, Cui C, Li Y, Gao Y, Zhu D, Gu Y, Pan G, Zhu Y, Zhang T. Lattice-Strain Engineering for Heterogenous Electrocatalytic Oxygen Evolution Reaction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209876. [PMID: 36639855 DOI: 10.1002/adma.202209876] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Revised: 01/06/2023] [Indexed: 06/17/2023]
Abstract
The energy efficiency of metal-air batteries and water-splitting techniques is severely constrained by multiple electronic transfers in the heterogenous oxygen evolution reaction (OER), and the high overpotential induced by the sluggish kinetics has become an uppermost scientific challenge. Numerous attempts are devoted to enabling high activity, selectivity, and stability via tailoring the surface physicochemical properties of nanocatalysts. Lattice-strain engineering as a cutting-edge method for tuning the electronic and geometric configuration of metal sites plays a pivotal role in regulating the interaction of catalytic surfaces with adsorbate molecules. By defining the d-band center as a descriptor of the structure-activity relationship, the individual contribution of strain effects within state-of-the-art electrocatalysts can be systematically elucidated in the OER optimization mechanism. In this review, the fundamentals of the OER and the advancements of strain-catalysts are showcased and the innovative trigger strategies are enumerated, with particular emphasis on the feedback mechanism between the precise regulation of lattice-strain and optimal activity. Subsequently, the modulation of electrocatalysts with various attributes is categorized and the impediments encountered in the practicalization of strained effect are discussed, ending with an outlook on future research directions for this burgeoning field.
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Affiliation(s)
- Zhiqian Hou
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chenghao Cui
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yanni Li
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yingjie Gao
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Deming Zhu
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yuanfan Gu
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guoyu Pan
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yaqiong Zhu
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tao Zhang
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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6
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Xin X, Chen J, Ma L, Ma T, Xin W, Xu H, Ren W, Liu Y. Grain Size Engineering of CVD-Grown Large-Area Graphene Films. SMALL METHODS 2023:e2300156. [PMID: 37075746 DOI: 10.1002/smtd.202300156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/02/2023] [Indexed: 05/03/2023]
Abstract
Graphene, a single atomic layer of graphitic carbon, has attracted much attention because of its outstanding properties hold great promise for a wide range of technological applications. Large-area graphene films (GFs) grown by chemical vapor deposition (CVD) are highly desirable for both investigating their intrinsic properties and realizing their practical applications. However, the presence of grain boundaries (GBs) has significant impacts on their properties and related applications. According to the different grain sizes, GFs can be divided into polycrystalline, single-crystal, and nanocrystalline films. In the past decade, considerable progress has been made in engineering the grain sizes of GFs by modifying the CVD processes or developing some new growth approaches. The key strategies involve controlling the nucleation density, growth rate, and grain orientation. This review aims to provide a comprehensive description of grain size engineering research of GFs. The main strategies and underlying growth mechanisms of CVD-grown large-area GFs with nanocrystalline, polycrystalline, and single-crystal structures are summarized, in which the advantages and limitations are highlighted. In addition, the scaling law of physical properties in electricity, mechanics, and thermology as a function of grain sizes are briefly discussed. Finally, the perspectives for challenges and future development in this area are also presented.
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Affiliation(s)
- Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Jiamei Chen
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Laipeng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Teng Ma
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
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Li J, Chen M, Samad A, Dong H, Ray A, Zhang J, Jiang X, Schwingenschlögl U, Domke J, Chen C, Han Y, Fritz T, Ruoff RS, Tian B, Zhang X. Wafer-scale single-crystal monolayer graphene grown on sapphire substrate. NATURE MATERIALS 2022; 21:740-747. [PMID: 35058609 DOI: 10.1038/s41563-021-01174-1] [Citation(s) in RCA: 52] [Impact Index Per Article: 26.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2020] [Accepted: 11/23/2021] [Indexed: 05/03/2023]
Abstract
The growth of inch-scale high-quality graphene on insulating substrates is desirable for electronic and optoelectronic applications, but remains challenging due to the lack of metal catalysis. Here we demonstrate the wafer-scale synthesis of adlayer-free ultra-flat single-crystal monolayer graphene on sapphire substrates. We converted polycrystalline Cu foil placed on Al2O3(0001) into single-crystal Cu(111) film via annealing, and then achieved epitaxial growth of graphene at the interface between Cu(111) and Al2O3(0001) by multi-cycle plasma etching-assisted-chemical vapour deposition. Immersion in liquid nitrogen followed by rapid heating causes the Cu(111) film to bulge and peel off easily, while the graphene film remains on the sapphire substrate without degradation. Field-effect transistors fabricated on as-grown graphene exhibited good electronic transport properties with high carrier mobilities. This work breaks a bottleneck of synthesizing wafer-scale single-crystal monolayer graphene on insulating substrates and could contribute to next-generation graphene-based nanodevices.
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Affiliation(s)
- Junzhu Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, China
| | - Mingguang Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Abdus Samad
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Haocong Dong
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, China
| | - Avijeet Ray
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Junwei Zhang
- School of Materials and Energy, Electron Microscopy Centre of Lanzhou University and Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, China
| | - Xiaochuan Jiang
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, China
- Department of Physics, Xiamen University, Xiamen, China
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Jari Domke
- Institute of Solid State Physics (IFK), Friedrich Schiller University Jena, Jena, Germany
| | - Cailing Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Yu Han
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Torsten Fritz
- Institute of Solid State Physics (IFK), Friedrich Schiller University Jena, Jena, Germany
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
- School of Chemical Engineering and Energy Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Bo Tian
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, China.
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.
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8
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Luo D, Choe M, Bizao RA, Wang M, Su H, Huang M, Jin S, Li Y, Kim M, Pugno NM, Ren B, Lee Z, Ruoff RS. Folding and Fracture of Single-Crystal Graphene Grown on a Cu(111) Foil. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2110509. [PMID: 35134267 DOI: 10.1002/adma.202110509] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
A single-crystal graphene film grown on a Cu(111) foil by chemical vapor deposition (CVD) has ribbon-like fold structures. These graphene folds are highly oriented and essentially parallel to each other. Cu surface steps underneath the graphene are along the <110> and <211> directions, leading to the formation of the arrays of folds. The folds in the single-layer graphene (SLG) are not continuous but break up into alternating patterns. A "joint" (an AB-stacked bilayer graphene) region connects two neighboring alternating regions, and the breaks are always along zigzag or armchair directions. Folds formed in bilayer or few-layer graphene are continuous with no breaks. Molecular dynamics simulations show that SLG suffers a significantly higher compressive stress compared to bilayer graphene when both are under the same compression, thus leading to the rupture of SLG in these fold regions. The fracture strength of a CVD-grown single-crystal SLG film is simulated to be about 70 GPa. This study greatly deepens the understanding of the mechanics of CVD-grown single-crystal graphene and such folds, and sheds light on the fabrication of various graphene origami/kirigami structures by substrate engineering. Such oriented folds can be used in a variety of further studies.
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Affiliation(s)
- Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Myeonggi Choe
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Rafael A Bizao
- Laboratory for Bioinspired, Bionic, Nano, Meta Materials & Mechanics, Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano, 77, Trento, 38123, Italy
| | - Meihui Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Haisheng Su
- Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yunqing Li
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Minhyeok Kim
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Nicola M Pugno
- Laboratory for Bioinspired, Bionic, Nano, Meta Materials & Mechanics, Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano, 77, Trento, 38123, Italy
- School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS, UK
| | - Bin Ren
- Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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9
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Sun L, Chen B, Wang W, Li Y, Zeng X, Liu H, Liang Y, Zhao Z, Cai A, Zhang R, Zhu Y, Wang Y, Song Y, Ding Q, Gao X, Peng H, Li Z, Lin L, Liu Z. Toward Epitaxial Growth of Misorientation-Free Graphene on Cu(111) Foils. ACS NANO 2022; 16:285-294. [PMID: 34965103 DOI: 10.1021/acsnano.1c06285] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The epitaxial growth of single-crystal thin films relies on the availability of a single-crystal substrate and a strong interaction between epilayer and substrate. Previous studies have reported the roles of the substrate (e.g., symmetry and lattice constant) in determining the orientations of chemical vapor deposition (CVD)-grown graphene, and Cu(111) is considered as the most promising substrate for epitaxial growth of graphene single crystals. However, the roles of gas-phase reactants and graphene-substrate interaction in determining the graphene orientation are still unclear. Here, we find that trace amounts of oxygen is capable of enhancing the interaction between graphene edges and Cu(111) substrate and, therefore, eliminating the misoriented graphene domains in the nucleation stage. A modified anomalous grain growth method is developed to improve the size of the as-obtained Cu(111) single crystal, relying on strongly textured polycrystalline Cu foils. The batch-to-batch production of A3-size (∼0.42 × 0.3 m2) single-crystal graphene films is achieved on Cu(111) foils relying on a self-designed pilot-scale CVD system. The as-grown graphene exhibits ultrahigh carrier mobilities of 68 000 cm2 V-1 s-1 at room temperature and 210 000 cm2 V-1 s-1 at 2.2 K. The findings and strategies provided in our work would accelerate the mass production of high-quality misorientation-free graphene films.
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Affiliation(s)
- Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Buhang Chen
- Beijing Graphene Institute, Beijing 100095, P. R. China
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
| | - Wendong Wang
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom
| | - Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Xiongzhi Zeng
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Haiyang Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Yu Liang
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Zhenyong Zhao
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Ali Cai
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Rui Zhang
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom
| | - Yeshu Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Yuqing Song
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Qingjie Ding
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Xuan Gao
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Li Lin
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
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10
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Sun H, Liang S, Zhang X. Growth and Etching of the Grain Boundaries in Polygonal Graphene Islands. Chemphyschem 2021; 23:e202100626. [PMID: 34755927 DOI: 10.1002/cphc.202100626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2021] [Revised: 11/09/2021] [Indexed: 11/11/2022]
Abstract
The grain boundary is an intrinsic defect within mono- and multi-layer polygonal graphene islands during the chemical vapor deposition growth process. It greatly influences their mechanical and electronic properties. However, the precise characterization and formation mechanism of grain boundaries still remain unclear. In this work, H2 etching experiments show that a polygonal etched hole originates from the natural location of a grain boundary beyond the nucleation site in polygonal monolayer graphene. Furthermore, colorful Raman mapping provides a visualized method to explore the distribution of grain boundaries in polygonal bilayer graphene. Therefore, a deep understanding of the growth kinetics of mono- and bi-layer polygonal graphene was obtained through etching engineering combined with Raman spectroscopy.
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Affiliation(s)
- Haibin Sun
- Key Laboratory of Microelectronics and Energy of Henan Province, College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, 464000, Peoples' Republic of China
| | - Shuangshuang Liang
- Key Laboratory of Microelectronics and Energy of Henan Province, College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, 464000, Peoples' Republic of China
| | - Xiuyun Zhang
- College of Physics Science and Technology, Yangzhou University, Yangzhou, 225002, Peoples' Republic of China
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11
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Nano-Physical Characterization of Chemical Vapor Deposition-Grown Monolayer Graphene for High Performance Electrode: Raman, Surface-Enhanced Raman Spectroscopy, and Electrostatic Force Microscopy Studies. NANOMATERIALS 2021; 11:nano11112839. [PMID: 34835607 PMCID: PMC8623610 DOI: 10.3390/nano11112839] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2021] [Revised: 10/12/2021] [Accepted: 10/20/2021] [Indexed: 11/16/2022]
Abstract
To achieve high-quality chemical vapor deposition of monolayer graphene electrodes (CVD-MG), appropriate characterization at each fabrication step is essential. In this article, (1) Raman spectroscopy/microscopy are employed to unravel the contact effect between the CVD-MG and Cu foil in suspended/supported formation. (2) The Surface-Enhanced Raman spectroscopy (SERS) system is described, unveiling the presence of a z-directional radial breathing-like mode (RBLM) around 150 cm-1, which matches the Raman shift of the radial breathing mode (RBM) from single-walled carbon nanotubes (SWCNTs) around 150 cm-1. This result indicates the CVD-MG located between the Au NPs and Au film is not flat but comprises heterogeneous protrusions of some domains along the z-axis. Consequently, the degree of carrier mobility can be influenced, as the protruding domains result in lower carrier mobility due to flexural phonon-electron scattering. A strongly enhanced G-peak domain, ascribed to the presence of scrolled graphene nanoribbons (sGNRs), was observed, and there remains the possibility for the fabrication of sGNRs as sources of open bandgap devices. (3) Electrostatic force microscopy (EFM) is used for the measurement of surface charge distribution of graphene at the nanoscale and is crucial in substantiating the electrical performance of CVD-MG, which was influenced by the surface structure of the Cu foil. The ripple (RP) structures were determined using EFM correlated with Raman spectroscopy, exhibiting a higher tapping amplitude which was observed with structurally stable and hydrophobic RPs with a threading type than surrounding RPs. (4) To reduce the RP density and height, a plausible fabrication could be developed that controls the electrical properties of the CVD-MG by tuning the cooling rate.
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12
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Luo D, Wang X, Li BW, Zhu C, Huang M, Qiu L, Wang M, Jin S, Kim M, Ding F, Ruoff RS. The Wet-Oxidation of a Cu(111) Foil Coated by Single Crystal Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102697. [PMID: 34309933 DOI: 10.1002/adma.202102697] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2021] [Revised: 06/14/2021] [Indexed: 06/13/2023]
Abstract
The wet-oxidation of a single crystal Cu(111) foil is studied by growing single crystal graphene islands on it followed by soaking it in water. 18 O-labeled water is also used; the oxygen atoms in the formed copper oxides in both the bare and graphene-coated Cu regions come from water. The oxidation of the graphene-coated Cu regions is enabled by water diffusing from the edges of graphene along the bunched Cu steps, and along some graphene ripples where such are present. This interfacial diffusion of water can occur because of the separation between the graphene and the "step corner" of bunched Cu steps. Density functional theory simulations suggest that adsorption of water in this gap is thermodynamically stable; the "step-induced-diffusion model" also applies to graphene-coated Cu surfaces of various other crystal orientations. Since bunched Cu steps and graphene ripples are diffusion pathways for water, ripple-free graphene is prepared on ultrasmooth Cu(111) surfaces and it is found that the graphene completely shields the underlying Cu from wet-oxidation. This study greatly deepens the understanding of how a graphene-coated copper surface is oxidized, and shows that graphene completely prevents the oxidation when that surface is ultrasmooth and when the graphene has no ripples or wrinkles.
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Affiliation(s)
- Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Xiao Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Bao-Wen Li
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Chongyang Zhu
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Lu Qiu
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Meihui Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Minhyeok Kim
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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13
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Dong J, Zhang L, Wu B, Ding F, Liu Y. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J Phys Chem Lett 2021; 12:7942-7963. [PMID: 34387496 DOI: 10.1021/acs.jpclett.1c02316] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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14
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Huang M, Deng B, Dong F, Zhang L, Zhang Z, Chen P. Substrate Engineering for CVD Growth of Single Crystal Graphene. SMALL METHODS 2021; 5:e2001213. [PMID: 34928093 DOI: 10.1002/smtd.202001213] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2020] [Revised: 01/13/2021] [Indexed: 06/14/2023]
Abstract
Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next-generation high-performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large-size single-crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single-crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.
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Affiliation(s)
- Ming Huang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Bangwei Deng
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Fan Dong
- Research Center for Environmental Science & Technology, Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Lili Zhang
- Institute of Chemical and Engineering Sciences, A*STAR, 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
| | - Zheye Zhang
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
| | - Peng Chen
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore, 637457, Singapore
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15
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Li Y, Sun L, Liu H, Wang Y, Liu Z. Preparation of single-crystal metal substrates for the growth of high-quality two-dimensional materials. Inorg Chem Front 2021. [DOI: 10.1039/d0qi00923g] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Recent advances on preparing single-crystal metals and their crucial roles in controlled growth of high-quality 2D materials are reviewed.
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Affiliation(s)
- Yanglizhi Li
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Luzhao Sun
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Haiyang Liu
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Yuechen Wang
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Zhongfan Liu
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
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16
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Burton OJ, Massabuau FCP, Veigang-Radulescu VP, Brennan B, Pollard AJ, Hofmann S. Integrated Wafer Scale Growth of Single Crystal Metal Films and High Quality Graphene. ACS NANO 2020; 14:13593-13601. [PMID: 33001624 DOI: 10.1021/acsnano.0c05685] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report on an approach to bring together single crystal metal catalyst preparation and graphene growth in a combined process flow using a standard cold-wall chemical vapor deposition (CVD) reactor. We employ a sandwich arrangement between a commercial polycrystalline Cu foil and c-plane sapphire wafer and show that close-spaced vacuum sublimation across the confined gap can result in an epitaxial, single-crystal Cu(111) film at high growth rate. The arrangement is scalable (we demonstrate 2″ wafer scale) and suppresses reactor contamination with Cu. While starting with an impure Cu foil, the freshly prepared Cu film is of high purity as measured by time-of-flight secondary ion mass spectrometry. We seamlessly connect the initial metallization with subsequent graphene growth via the introduction of hydrogen and gaseous carbon precursors, thereby eliminating contamination due to substrate transfer and common lengthy catalyst pretreatments. We show that the sandwich approach also enables for a Cu surface with nanometer scale roughness during graphene growth and thus results in high quality graphene similar to previously demonstrated Cu enclosure approaches. We systematically explore the parameter space and discuss the opportunities, including subsequent dry transfer, generality, and versatility of our approach particularly regarding the cost-efficient preparation of different single crystal film orientations and expansion to other material systems.
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Affiliation(s)
- Oliver J Burton
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Fabien C-P Massabuau
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
- Department of Physics, University of Strathclyde, 107 Rottenrow East, Glasgow G4 0NG, United Kingdom
| | - Vlad-Petru Veigang-Radulescu
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
- National Physical Laboratory, Hampton Rd, Teddington, Middlesex TW11 0LW, United Kingdom
| | - Barry Brennan
- National Physical Laboratory, Hampton Rd, Teddington, Middlesex TW11 0LW, United Kingdom
| | - Andrew J Pollard
- National Physical Laboratory, Hampton Rd, Teddington, Middlesex TW11 0LW, United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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17
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Deng B, Hou Y, Liu Y, Khodkov T, Goossens S, Tang J, Wang Y, Yan R, Du Y, Koppens FHL, Wei X, Zhang Z, Liu Z, Peng H. Growth of Ultraflat Graphene with Greatly Enhanced Mechanical Properties. NANO LETTERS 2020; 20:6798-6806. [PMID: 32787178 DOI: 10.1021/acs.nanolett.0c02785] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Graphene grown on Cu by chemical vapor deposition is rough due to the surface roughening of Cu for releasing interfacial thermal stress and/or graphene bending energy. The roughness degrades the electrical conductance and mechanical strength of graphene. Here, by using vicinal Cu(111) and flat Cu(111) as model substrates, we investigated the critical role of original surface topography on the surface deformation of Cu covered by graphene. We demonstrated that terrace steps on vicinal Cu(111) dominate the formation of step bunches (SBs). Atomically flat graphene with roughness down to 0.2 nm was grown on flat Cu(111) films. When SB-induced ripples were avoided, as-grown ultraflat graphene maintained its flat feature after transfer. The ultraflat graphene exhibited extraordinary mechanical properties with Young's modulus ≈ 940 GPa and strength ≈ 117 GPa, comparable to mechanical exfoliated ones. Molecular dynamics simulation revealed the mechanism of softened elastic response and weakened strength of graphene with rippled structures.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yuan Hou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230027, China
| | - Ying Liu
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
- Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Tymofiy Khodkov
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Stijin Goossens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Rui Yan
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Yin Du
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Frank H L Koppens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Xiaoding Wei
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China
- Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China
| | - Zhong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100094, China
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18
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Huang M, Ruoff RS. Growth of Single-Layer and Multilayer Graphene on Cu/Ni Alloy Substrates. Acc Chem Res 2020; 53:800-811. [PMID: 32207601 DOI: 10.1021/acs.accounts.9b00643] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
ConspectusGraphene, a one-atom-thick layer of carbon with a honeycomb lattice, has drawn great attention due to its outstanding properties and its various applications in electronic and photonic devices. Mechanical exfoliation has been used for preparing graphene flakes (from monolayer to multilayer with thick pieces also typically present), but with sizes limited typically to less than millimeters, its usefulness is limited. Chemical vapor deposition (CVD) has been shown to be the most effective technique for the scalable preparation of graphene films with high quality and uniformity. To date, CVD growth of graphene on the most commonly used substrates (Cu and Ni foils) has been demonstrated and intensively studied. However, a survey of the existing literature and earlier work using Cu or Ni substrates for CVD growth indicates that the bilayer and multilayer graphene over a large area, particularly single crystals, have not been obtained.In this Account, we review current progress and development in the CVD growth of graphene and highlight the important challenges that need to be addressed, for example, how to achieve large single crystal graphene films with a controlled number of layers. A single-layer graphene film grown on polycrystalline Cu foil was first reported by our group, and since then various techniques have been devoted to achieving the fast growth of large-area graphene films with high quality. Commercially available Cu/Ni foils, sputtered Cu/Ni thin films, and polycrystalline Cu/Ni foils have been used for the CVD synthesis of bilayer, trilayer, and multilayer graphene. Cu/Ni alloy substrates are particularly interesting due to their greater carbon solubility than pure Cu substrates and this solubility can be finely controlled by changing the alloy composition. These substrates with controlled compositions have shown the potential for the growth of layer-tunable graphene films in addition to providing a much higher growth rate due to their stronger catalytic activity. However, the well-controlled preparation of single crystal graphene with a defined number of layers on Cu/Ni substrates is still challenging.Due to its small lattice mismatch with graphene, a single crystal Cu(111) foil has been shown to be an ideal substrate for the epitaxial growth of graphene. Our group has reported the synthesis of large-size single crystal Cu(111) foils by the contact-free annealing of commercial Cu foils, and single crystal Cu/Ni(111) alloy foils have also been obtained after the heat-treatment of Ni-coated Cu(111) foils. The use of these single crystal foils (especially the Cu/Ni alloy foils) as growth substrates has enabled the fast growth of single crystal single-layer graphene films. By increase of the Ni content, single crystal bilayer, trilayer, and even multilayer graphene films have been synthesized. In addition, we also discuss the wafer-scale growth of single-layer graphene on the single crystalline Cu/Ni(111) thin films.Recent research results on the large-scale preparation of single crystal graphene films with different numbers of layers on various types of Cu/Ni alloy substrates with different compositions are reviewed and discussed in detail. Despite the remarkable progress in this field, further challenges, such as the wafer-scale synthesis of single crystal graphene with a controlled number of layers and a deeper understanding of the growth mechanism of bilayer and multilayer graphene growth on Cu/Ni substrates, still need to be addressed.
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Affiliation(s)
- Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Rodney S. Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Chemistry, UNIST, Ulsan 44919, Republic of Korea
- School of Energy and Chemical Engineering, UNIST, Ulsan 44919, Republic of Korea
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19
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Lee Y, Koo J, Lee S, Yoon J, Kim K, Jang M, Jang J, Choe J, Li B, Le CT, Ullah F, Kim YS, Hwang JY, Lee WC, Ruoff RS, Cheong H, Cheon J, Lee H, Kim K. Universal Oriented van der Waals Epitaxy of 1D Cyanide Chains on Hexagonal 2D Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1900757. [PMID: 32099750 PMCID: PMC7029641 DOI: 10.1002/advs.201900757] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2019] [Revised: 11/26/2019] [Indexed: 05/05/2023]
Abstract
The atomic or molecular assembly on 2D materials through the relatively weak van der Waals interaction is quite different from the conventional heteroepitaxy and may result in unique growth behaviors. Here, it is shown that straight 1D cyanide chains display universal epitaxy on hexagonal 2D materials. A universal oriented assembly of cyanide crystals (AgCN, AuCN, and Cu0.5Au0.5CN) is observed, where the chains are aligned along the three zigzag lattice directions of various 2D hexagonal crystals (graphene, h-BN, WS2, MoS2, WSe2, MoSe2, and MoTe2). The potential energy landscape of the hexagonal lattice induces this preferred alignment of 1D chains along the zigzag lattice directions, regardless of the lattice parameter and surface elements as demonstrated by first-principles calculations and parameterized surface potential calculations. Furthermore, the oriented microwires can serve as crystal orientation markers, and stacking-angle-controlled vertical 2D heterostructures are successfully fabricated by using them as markers. The oriented van der Waals epitaxy can be generalized to any hexagonal 2D crystals and will serve as a unique growth process to form crystals with orientations along the zigzag directions by epitaxy.
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Affiliation(s)
- Yangjin Lee
- Department of PhysicsYonsei UniversitySeoul03722Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Korea
| | - Jahyun Koo
- Department of PhysicsKonkuk UniversitySeoul05029Korea
| | - Sol Lee
- Department of PhysicsYonsei UniversitySeoul03722Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Korea
| | - Jun‐Yeong Yoon
- Department of PhysicsYonsei UniversitySeoul03722Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Korea
| | - Kangwon Kim
- Department of PhysicsSogang UniversitySeoul04107Korea
| | | | - Jeongsu Jang
- Department of PhysicsYonsei UniversitySeoul03722Korea
- Department of PhysicsUlsan National Institute of Science and Technology (UNIST)Ulsan44919Korea
| | | | - Bao‐Wen Li
- Center for Multidimensional Carbon Materials (CMCM)Institute for Basic Science (IBS)Ulsan44919Korea
| | - Chinh Tam Le
- Department of Physics and Energy Harvest‐Storage Research CenterUniversity of UlsanUlsan44610Korea
| | - Farman Ullah
- Department of Physics and Energy Harvest‐Storage Research CenterUniversity of UlsanUlsan44610Korea
| | - Yong Soo Kim
- Department of Physics and Energy Harvest‐Storage Research CenterUniversity of UlsanUlsan44610Korea
| | - Jun Yeon Hwang
- Institute of Advanced Composite MaterialsKorea Institute of Science and Technology (KIST)Jeonbuk55324Korea
| | - Won Chul Lee
- Department of Mechanical EngineeringHanyang UniversityAnsan15588Korea
| | - Rodney S. Ruoff
- Center for Multidimensional Carbon Materials (CMCM)Institute for Basic Science (IBS)Ulsan44919Korea
- Department of ChemistryUlsan National Institute of Science and Technology (UNIST)Ulsan44919Korea
- School of Materials Science and EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Korea
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)Ulsan44919Korea
| | | | - Jinwoo Cheon
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Korea
- Department of ChemistryYonsei UniversitySeoul03722Korea
- Graduate Program of Nano Biomedical EngineeringYonsei‐IBS InstituteYonsei UniversitySeoul03722Korea
| | - Hoonkyung Lee
- Department of PhysicsKonkuk UniversitySeoul05029Korea
| | - Kwanpyo Kim
- Department of PhysicsYonsei UniversitySeoul03722Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Korea
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20
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Lee U, Han Y, Lee S, Kim JS, Lee YH, Kim UJ, Son H. Time Evolution Studies on Strain and Doping of Graphene Grown on a Copper Substrate Using Raman Spectroscopy. ACS NANO 2020; 14:919-926. [PMID: 31841304 DOI: 10.1021/acsnano.9b08205] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The enhanced growth of Cu oxides underneath graphene grown on a Cu substrate has been of great interest to many groups. In this work, the strain and doping status of graphene, based on the gradual growth of Cu oxides from underneath, were systematically studied using time evolution Raman spectroscopy. The compressive strain to graphene, due to the thermal expansion coefficient difference between graphene and the Cu substrate, was almost released by the nonuniform Cu2O growth; however, slight tensile strain was exerted. This induced p-doping in the graphene with a carrier density up to 1.7 × 1013 cm-2 when it was exposed to air for up to 30 days. With longer exposure to ambient conditions (>1 year), we observed that graphene/Cu2O hybrid structures significantly slow down the oxidation compared to that using a bare Cu substrate. The thickness of the CuO layer on the bare Cu substrate was increased to approximately 270 nm. These findings were confirmed through white light interference measurements and scanning electron microscopy.
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Affiliation(s)
- Ukjae Lee
- School of Integrative Engineering , Chung-Ang University , Seoul 06974 , Republic of Korea
| | - Yoojoong Han
- School of Integrative Engineering , Chung-Ang University , Seoul 06974 , Republic of Korea
- Nano Technology Division , NANOBASE Inc. , Seoul 08502 , Republic of Korea
| | - Sanghyub Lee
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Jun Suk Kim
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Un Jeong Kim
- Imaging Device Laboratory , Samsung Advanced Institute of Technology , Suwon , Gyeonggi-do 16419 , Republic of Korea
| | - Hyungbin Son
- School of Integrative Engineering , Chung-Ang University , Seoul 06974 , Republic of Korea
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21
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Zhang J, Lin L, Jia K, Sun L, Peng H, Liu Z. Controlled Growth of Single-Crystal Graphene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903266. [PMID: 31583792 DOI: 10.1002/adma.201903266] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2019] [Revised: 07/23/2019] [Indexed: 06/10/2023]
Abstract
Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high-end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain-boundary-free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single-seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single-crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large-area single-crystal graphene films are discussed.
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Affiliation(s)
- Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
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22
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Luo B, Koleini M, Whelan PR, Shivayogimath A, Brandbyge M, Bøggild P, Booth TJ. Graphene-Subgrain-Defined Oxidation of Copper. ACS APPLIED MATERIALS & INTERFACES 2019; 11:48518-48524. [PMID: 31797664 DOI: 10.1021/acsami.9b15931] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The correlation between the crystal structure of chemical vapor deposition (CVD)-grown graphene and the crystal structure of the Cu growth substrate and their mutual effect on the oxidation of the underlying Cu are systematically explored. We report that natural oxygen or water intercalation along the graphene-Cu interface results in an orientation-dependent oxidation rate of the Cu surface, particularly noticeable for bicrystal graphene domains on the same copper grain, suggesting that the relative crystal orientation of subgrains determines the degree of Cu oxidation. Atomistic force field calculations support these observations, showing that graphene domains have preferential alignment with the Cu(111) with a smaller average height above the global Cu surface as compared to intermediate orientations, and that this is the origin of the heterogeneous oxidation rate of Cu. This work demonstrates that the natural oxidation resistance of Cu coated by graphene is highly dependent on the crystal orientation and lattice alignment of Cu and graphene, which is key information for engineering the interface configuration of the graphene-Cu system for specific functionalities in mechanical, anticorrosion, and electrical applications of CVD-grown graphene.
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Affiliation(s)
- Birong Luo
- DTU Physics , Technical University of Denmark , Ørsteds Plads, 345C , 2800 Kgs. Lyngby , Denmark
- College of Physics and Materials Science, Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials , Tianjin Normal University , 300387 Tianjin , P. R. China
| | - Mohammad Koleini
- DTU Physics , Technical University of Denmark , Ørsteds Plads, 345C , 2800 Kgs. Lyngby , Denmark
| | - Patrick R Whelan
- DTU Physics , Technical University of Denmark , Ørsteds Plads, 345C , 2800 Kgs. Lyngby , Denmark
- Center for Nanostructured Graphene (CNG) , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Abhay Shivayogimath
- DTU Physics , Technical University of Denmark , Ørsteds Plads, 345C , 2800 Kgs. Lyngby , Denmark
- Center for Nanostructured Graphene (CNG) , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Mads Brandbyge
- DTU Physics , Technical University of Denmark , Ørsteds Plads, 345C , 2800 Kgs. Lyngby , Denmark
| | - Peter Bøggild
- DTU Physics , Technical University of Denmark , Ørsteds Plads, 345C , 2800 Kgs. Lyngby , Denmark
- Center for Nanostructured Graphene (CNG) , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Timothy J Booth
- DTU Physics , Technical University of Denmark , Ørsteds Plads, 345C , 2800 Kgs. Lyngby , Denmark
- Center for Nanostructured Graphene (CNG) , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
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23
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Ma Y, Cui B, He L, Tian K, Zhang Z, Wang M. A novel support for platinum electrocatalyst based on mesoporous carbon embedded with bimetallic SnTi oxide as a bifunctional electrocatalyst. J Electroanal Chem (Lausanne) 2019. [DOI: 10.1016/j.jelechem.2019.113435] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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24
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Luo D, Wang M, Li Y, Kim C, Yu KM, Kim Y, Han H, Biswal M, Huang M, Kwon Y, Goo M, Camacho-Mojica DC, Shi H, Yoo WJ, Altman MS, Shin HJ, Ruoff RS. Adlayer-Free Large-Area Single Crystal Graphene Grown on a Cu(111) Foil. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1903615. [PMID: 31264306 DOI: 10.1002/adma.201903615] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2019] [Indexed: 06/09/2023]
Abstract
To date, thousands of publications have reported chemical vapor deposition growth of "single layer" graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer-free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter-long ≈100 nm wide "folds," separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi-randomly in the polycrystalline graphene film. High-performance field-effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer-free single crystal graphene film.
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Affiliation(s)
- Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Meihui Wang
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yunqing Li
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Changsik Kim
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Gyeonggi-do, 16419, Republic of Korea
| | - Ka Man Yu
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yohan Kim
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Huijun Han
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Min Goo
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Dulce C Camacho-Mojica
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Haofei Shi
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Gyeonggi-do, 16419, Republic of Korea
| | - Michael S Altman
- Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Hyung-Joon Shin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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25
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Cho JH, Na SR, Park S, Akinwande D, Liechti KM, Cullinan MA. Controlling the number of layers in graphene using the growth pressure. NANOTECHNOLOGY 2019; 30:235602. [PMID: 30780133 DOI: 10.1088/1361-6528/ab0847] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Monolayer graphene is commonly grown on Cu substrates due to the self-limiting nature of graphene synthesis by chemical vapor deposition (CVD). Consequently, the growth of multilayer graphene by CVD has proven to be relatively difficult. This study demonstrates that the number of layers in graphene synthesized on a copper substrate can be precisely set by controlling the partial pressure of hydrogen gas used in the CVD process. This study also shows that a pressure threshold exists for a distinct transition from monolayer to multilayer graphene growth. This threshold is shown to be the boundary where the graphene growth process on Cu by CVD is no longer a self-limiting process. In addition, the multilayer graphene synthesized through the pressure control method forms in the Volmer-Weber mode with an AB stacking structure.
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Affiliation(s)
- Joon Hyong Cho
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712, United States of America
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26
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Huet B, Raskin JP. Role of the Cu substrate in the growth of ultra-flat crack-free highly-crystalline single-layer graphene. NANOSCALE 2018; 10:21898-21909. [PMID: 30431636 DOI: 10.1039/c8nr06817h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Producing ultra-flat crack-free single-layer high-quality graphene over large areas has remained the key challenge to fully exploit graphene's potential into next-generation technological applications. In this regard, we show that epitaxial Cu(111) film represents the most promising catalyst for the chemical vapor deposition (CVD) of graphene with superior planarity and physical integrity. We first compare the most widely used Cu catalysts (foils, polycrystalline films and epitaxial films) in order to benchmark the roughness of the Cu surface which serves as a template for graphene growth. We then discuss the correlation between the formation of cracks and wrinkles in as-grown graphene and the surface morphology of these various Cu catalysts. In particular, Cu grain boundary grooves, inherently present in polycrystalline substrates, are found to contribute to the formation of cracks. Finally, we focused on tuning the CVD protocol in order to successfully grow highly crystalline graphene made of millimeter-size domains on every type of catalyst while mitigating Cu surface roughening. Putting into context the challenges and opportunities associated with the most widely used Cu catalysts provides valuable guidelines for high-throughput manufacturing of graphene suitable for emerging industrial applications.
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27
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Li S, Zhang N, Xie X, Luque R, Xu Y. Stress‐Transfer‐Induced In Situ Formation of Ultrathin Nickel Phosphide Nanosheets for Efficient Hydrogen Evolution. Angew Chem Int Ed Engl 2018; 57:13082-13085. [DOI: 10.1002/anie.201806221] [Citation(s) in RCA: 78] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2018] [Revised: 07/15/2018] [Indexed: 11/10/2022]
Affiliation(s)
- Shao‐Hai Li
- State Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou University Fuzhou 350116 P. R. China
- College of Chemistry, New CampusFuzhou University Fuzhou 350116 P. R. China
| | - Nan Zhang
- State Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou University Fuzhou 350116 P. R. China
- College of Chemistry, New CampusFuzhou University Fuzhou 350116 P. R. China
| | - Xiuqiang Xie
- State Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou University Fuzhou 350116 P. R. China
- College of Chemistry, New CampusFuzhou University Fuzhou 350116 P. R. China
| | - Rafael Luque
- Departamento de Quimica OrganicaUniversidad de Cordoba Edificio Marie Curie E-14014 Cordoba Spain
- Peoples Friendship University of Russia (RUDN University) 6 Miklukho-Maklaya str. 117198 Moscow Russia
| | - Yi‐Jun Xu
- State Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou University Fuzhou 350116 P. R. China
- College of Chemistry, New CampusFuzhou University Fuzhou 350116 P. R. China
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28
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Qi Y, Wang Y, Pang Z, Dou Z, Wei T, Gao P, Zhang S, Xu X, Chang Z, Deng B, Chen S, Chen Z, Ci H, Wang R, Zhao F, Yan J, Yi X, Liu K, Peng H, Liu Z, Tong L, Zhang J, Wei Y, Li J, Liu Z. Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire. J Am Chem Soc 2018; 140:11935-11941. [PMID: 30175921 DOI: 10.1021/jacs.8b03871] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
We study the roles of graphene acting as a buffer layer for growth of an AlN film on a sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries. The graphene interlayer also weakens the interaction between AlN and sapphire and accommodates their large mismatch in the lattice and thermal expansion coefficients; thus, the compressive strain in AlN and the tensile strain in sapphire are largely relaxed. The effective relaxation of strain further leads to a low density of defects in the AlN films. These findings reveal the roles of graphene in III-nitride growth and offer valuable insights into the efficient applications of graphene in the light-emitting diode industry.
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Affiliation(s)
| | - Yunyu Wang
- Research and Development Center for Solid State Lighting , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Zhenqian Pang
- LNM , Institute of Mechanics, Chinese Academy of Sciences , Beijing , 100190 , China.,School of Engineering Sciences , University of Chinese Academy of Sciences , Beijing 100049 , China
| | | | - Tongbo Wei
- Research and Development Center for Solid State Lighting , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Peng Gao
- Collaborative Innovation Centre of Quantum Matter , Beijing 100871 , China
| | | | | | - Zhenghua Chang
- LNM , Institute of Mechanics, Chinese Academy of Sciences , Beijing , 100190 , China.,School of Engineering Sciences , University of Chinese Academy of Sciences , Beijing 100049 , China
| | | | | | | | | | | | - Fuzhen Zhao
- College of Science , China University of Petroleum , Qingdao 266580 , China
| | - Jianchang Yan
- Research and Development Center for Solid State Lighting , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Xiaoyan Yi
- Research and Development Center for Solid State Lighting , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Kaihui Liu
- Collaborative Innovation Centre of Quantum Matter , Beijing 100871 , China
| | - Hailin Peng
- Beijing Graphene Institute (BGI) , Beijing 100095 , China
| | - Zhiqiang Liu
- Research and Development Center for Solid State Lighting , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | | | - Jin Zhang
- Beijing Graphene Institute (BGI) , Beijing 100095 , China
| | - Yujie Wei
- LNM , Institute of Mechanics, Chinese Academy of Sciences , Beijing , 100190 , China.,School of Engineering Sciences , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Jinmin Li
- Research and Development Center for Solid State Lighting , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Zhongfan Liu
- Beijing Graphene Institute (BGI) , Beijing 100095 , China
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29
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Lin L, Deng B, Sun J, Peng H, Liu Z. Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene. Chem Rev 2018; 118:9281-9343. [PMID: 30207458 DOI: 10.1021/acs.chemrev.8b00325] [Citation(s) in RCA: 86] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.
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Affiliation(s)
- Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Bing Deng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Jingyu Sun
- Soochow Institute for Energy and Materials Innovations (SIEMIS), College of Physics, Optoelectronics and Energy , Soochow University , Suzhou 215006 , P. R. China.,Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
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30
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Li S, Zhang N, Xie X, Luque R, Xu Y. Stress‐Transfer‐Induced In Situ Formation of Ultrathin Nickel Phosphide Nanosheets for Efficient Hydrogen Evolution. Angew Chem Int Ed Engl 2018. [DOI: 10.1002/ange.201806221] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Shao‐Hai Li
- State Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou University Fuzhou 350116 P. R. China
- College of Chemistry, New CampusFuzhou University Fuzhou 350116 P. R. China
| | - Nan Zhang
- State Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou University Fuzhou 350116 P. R. China
- College of Chemistry, New CampusFuzhou University Fuzhou 350116 P. R. China
| | - Xiuqiang Xie
- State Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou University Fuzhou 350116 P. R. China
- College of Chemistry, New CampusFuzhou University Fuzhou 350116 P. R. China
| | - Rafael Luque
- Departamento de Quimica OrganicaUniversidad de Cordoba Edificio Marie Curie E-14014 Cordoba Spain
- Peoples Friendship University of Russia (RUDN University) 6 Miklukho-Maklaya str. 117198 Moscow Russia
| | - Yi‐Jun Xu
- State Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou University Fuzhou 350116 P. R. China
- College of Chemistry, New CampusFuzhou University Fuzhou 350116 P. R. China
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31
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Deng B, Wu J, Zhang S, Qi Y, Zheng L, Yang H, Tang J, Tong L, Zhang J, Liu Z, Peng H. Anisotropic Strain Relaxation of Graphene by Corrugation on Copper Crystal Surfaces. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800725. [PMID: 29717818 DOI: 10.1002/smll.201800725] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2018] [Revised: 03/26/2018] [Indexed: 06/08/2023]
Abstract
Corrugation is a ubiquitous phenomenon for graphene grown on metal substrates by chemical vapor deposition, which greatly affects the electrical, mechanical, and chemical properties. Recent years have witnessed great progress in controlled growth of large graphene single crystals; however, the issue of surface roughness is far from being addressed. Here, the corrugation at the interface of copper (Cu) and graphene, including Cu step bunches (CuSB) and graphene wrinkles, are investigated and ascribed to the anisotropic strain relaxation. It is found that the corrugation is strongly dependent on Cu crystallographic orientations, specifically, the packed density and anisotropic atomic configuration. Dense Cu step bunches are prone to form on loose packed faces due to the instability of surface dynamics. On an anisotropic Cu crystal surface, Cu step bunches and graphene wrinkles are formed in two perpendicular directions to release the anisotropic interfacial stress, as revealed by morphology imaging and vibrational analysis. Cu(111) is a suitable crystal face for growth of ultraflat graphene with roughness as low as 0.20 nm. It is believed the findings will contribute to clarifying the interplay between graphene and Cu crystal faces, and reducing surface roughness of graphene by engineering the crystallographic orientation of Cu substrates.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Shishu Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yue Qi
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Liming Zheng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Hao Yang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Lianming Tong
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Jin Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
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